TWI747101B - 製程監測 - Google Patents

製程監測 Download PDF

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Publication number
TWI747101B
TWI747101B TW108145450A TW108145450A TWI747101B TW I747101 B TWI747101 B TW I747101B TW 108145450 A TW108145450 A TW 108145450A TW 108145450 A TW108145450 A TW 108145450A TW I747101 B TWI747101 B TW I747101B
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TW
Taiwan
Prior art keywords
defect
bse
material element
image
ambiguity
Prior art date
Application number
TW108145450A
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English (en)
Chinese (zh)
Other versions
TW202104889A (zh
Inventor
迪兒 賽門西
尤金Ｔ 布拉克
阿迪 伯恩
古吉特 辛格
Original Assignee
以色列商應用材料以色列公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/405,920 external-priority patent/US11022565B2/en
Application filed by 以色列商應用材料以色列公司 filed Critical 以色列商應用材料以色列公司
Publication of TW202104889A publication Critical patent/TW202104889A/zh
Application granted granted Critical
Publication of TWI747101B publication Critical patent/TWI747101B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/66—Specific applications or type of materials multiple steps inspection, e.g. coarse/fine

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW108145450A 2018-12-12 2019-12-12 製程監測 TWI747101B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862778746P 2018-12-12 2018-12-12
US62/778,746 2018-12-12
US16/405,920 US11022565B2 (en) 2019-05-07 2019-05-07 Process monitoring
US16/405,920 2019-05-07

Publications (2)

Publication Number Publication Date
TW202104889A TW202104889A (zh) 2021-02-01
TWI747101B true TWI747101B (zh) 2021-11-21

Family

ID=71138112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108145450A TWI747101B (zh) 2018-12-12 2019-12-12 製程監測

Country Status (3)

Country Link
KR (1) KR102324622B1 (ko)
CN (1) CN111312607B (ko)
TW (1) TWI747101B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201432253A (zh) * 2012-12-28 2014-08-16 Hitachi High Tech Corp 帶電粒子束裝置及其缺陷分析方法
US20160025648A1 (en) * 2014-07-22 2016-01-28 Kla-Tencor Corporation Virtual Inspection Systems with Multiple Modes
US9899185B1 (en) * 2015-04-21 2018-02-20 Applied Materials Israel Ltd. Resolving ambiguities in an energy spectrum
TW201831886A (zh) * 2017-01-05 2018-09-01 美商克萊譚克公司 用於缺陷材料分類之系統及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture
KR100351059B1 (ko) * 2000-11-23 2002-09-05 삼성전자 주식회사 반도체 소자의 전기적 결함 검사 장치, 이를 이용한 반도체 소자의 전기적 결함 검사 방법
CN1645588A (zh) * 2003-11-10 2005-07-27 汉民微测科技股份有限公司 监控ic加工的方法与系统
JP5715873B2 (ja) * 2011-04-20 2015-05-13 株式会社日立ハイテクノロジーズ 欠陥分類方法及び欠陥分類システム
US8723115B2 (en) * 2012-03-27 2014-05-13 Kla-Tencor Corporation Method and apparatus for detecting buried defects
EP2831120A4 (en) 2012-03-29 2015-08-26 Calera Corp METHOD AND SYSTEMS FOR USING CARBIDKALK
TWI494537B (zh) * 2013-01-23 2015-08-01 Hitachi High Tech Corp A pattern measuring method, a device condition setting method of a charged particle beam device, and a charged particle beam device
KR101709241B1 (ko) * 2013-08-14 2017-02-23 가부시끼가이샤 히다치 세이사꾸쇼 반도체 검사 방법, 반도체 검사 장치, 및 반도체 소자의 제조 방법
US9535010B2 (en) * 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
US9286675B1 (en) * 2014-10-23 2016-03-15 Applied Materials Israel Ltd. Iterative defect filtering process
JP2016134412A (ja) * 2015-01-16 2016-07-25 株式会社日立ハイテクノロジーズ 欠陥観察方法および装置
US10436720B2 (en) * 2015-09-18 2019-10-08 KLA-Tenfor Corp. Adaptive automatic defect classification

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201432253A (zh) * 2012-12-28 2014-08-16 Hitachi High Tech Corp 帶電粒子束裝置及其缺陷分析方法
US20160025648A1 (en) * 2014-07-22 2016-01-28 Kla-Tencor Corporation Virtual Inspection Systems with Multiple Modes
US9899185B1 (en) * 2015-04-21 2018-02-20 Applied Materials Israel Ltd. Resolving ambiguities in an energy spectrum
TW201831886A (zh) * 2017-01-05 2018-09-01 美商克萊譚克公司 用於缺陷材料分類之系統及方法

Also Published As

Publication number Publication date
CN111312607A (zh) 2020-06-19
CN111312607B (zh) 2022-02-25
KR20200073145A (ko) 2020-06-23
TW202104889A (zh) 2021-02-01
KR102324622B1 (ko) 2021-11-12

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