TWI747101B - Process monitoring - Google Patents

Abstract

A method for determining a defect material element, the method includes (a) acquiring, by a charged particle beam system and by applying a spectroscopy process, an electromagnetic emission spectrum of a part of a defect; (b) acquiring, by the charged particle beam system, a backscattered electron (BSE) image of an area that includes the defect; and (c) determining a defect material element. The determining of the defect material element includes: determining whether an ambiguity exists in the electromagnetic emission spectrum, and resolving the ambiguity based on the BSE image, when it is determined that the ambiguity exists.

Description

Process monitoring

This patent application requests the benefits of U.S. Application No. 62/778,746 filed on December 12, 2018 and U.S. Application No. 16/405,920 filed on May 7, 2019, by citing these two applications The full text of this article incorporates their content here.

This manual is about process monitoring.

Nano-scale foreign material particles can be formed on a wafer substrate, also called a bare wafer. These particles are unwanted by-products of the manufacturing process and are considered defects.

The composition of these defects may affect the severity of these defects.

There is an increasing need to provide an effective, fast and reliable way to determine the material elements of foreign material particles.

A method for determining defect material elements of a defect can be provided. The method can include the following steps: obtaining the electromagnetic emission spectrum of a part of the defect by a charged particle beam system and by applying a spectroscopic process; obtaining the electromagnetic emission spectrum of a part of the defect by the charged particle beam system The backscattered electron (BSE) image of the area of the defect may be included; and determining the defective material element; wherein the step of determining the defective material element may include: (a) determining whether there is ambiguity in the electromagnetic emission spectrum, and ( b) When it can be determined that the blurriness exists, analyze the blurriness based on the BSE image.

The resolution of the ambiguity may include selecting the defective material element from potential material elements that exhibit peaks that can be separated from each other by an energy difference that may be less than the resolution of the spectroscopic process.

The potential material elements may include organic material elements and heavier material elements.

The analysis of the ambiguity may include selecting the defective material element based on the intensity of one or more BSE image primitives of the defect.

The area may include the defect and the background material surrounding the defect; wherein the method may include determining the background material element of the background material.

The step of determining the defective material element may be based at least in part on the background material element.

The background material element has an atomic weight that can belong to the background atomic weight category, and the step of determining the defective material element may include: (a) intensity parameters of one or more BSE image primitives based on the background material and (b) the The relationship between the intensity parameters of one or more BSE image primitives of the defect determines the atomic weight category of the defective material element.

The method may include classifying the atomic weight category of the defective material element into the following categories: (a) lighter than the background material; (b) the background atomic weight category; and (d) heavier than the background material. At least one category.

The background material may be silicon, and the step of determining the defective material element may include classifying the defective material element into the following categories: (a) the second period of the periodic table; (b) the third period of the periodic table Period; (c) the fourth period of the periodic table of the elements; and (d) the sixth period of the periodic table of the elements.

The method may include: deciding whether the ambiguity exists in the electromagnetic emission spectrum; and acquiring the BSE image only when the ambiguity exists in the electromagnetic emission spectrum.

The step of acquiring the BSE image may include: irradiating the area with electrons having incident energy; and generating the BSE image substantially only from BSE electrons having an energy that may be higher than an energy threshold.

The step of acquiring the BSE image may include rejecting BSE electrons originating from a position that can be located below a certain depth from the surface of the area.

A computer-readable medium can be provided. The computer-readable medium can be non-transitory and can store instructions that, when executed by a computerized system, cause the computerized system to execute a process, and the process may include: The charged particle beam system obtains the electromagnetic emission spectrum of a part of the defect by applying a spectroscopic process; the backscattered electron (BSE) image of the area that can include the defect is obtained by the charged particle beam system; and the defect material element is determined ; Wherein the step of determining the defective material element may include: (a) determining whether there is ambiguity in the electromagnetic emission spectrum, and (b) when it can be determined that the ambiguity exists, analyzing the ambiguity based on the BSE image .

A charged particle beam system may be provided. The charged particle beam system may include a charged particle optical device and a processor, wherein the charged particle optical device may be configured to (i) obtain an electromagnetic emission spectrum of a part of a defect by applying a spectroscopic process (Ii) Obtain a backscattered electron (BSE) image of the area that can include the defect; and the processing circuit can be configured to determine the defective material element by the following method: (a) Determine whether there is in the electromagnetic emission spectrum Fuzziness; and (b) when it can be determined that the fuzziness exists, analyze the fuzziness based on the BSE image.

In the following detailed description, many specific details are set forth in order to provide a thorough understanding of the present invention. However, those skilled in the art will understand that the present invention can be practiced without these specific details. In other cases, well-known methods, procedures and components are not described in detail so as not to obscure the present invention.

In the concluding part of this specification, it is specifically pointed out and clearly claimed as the subject of the present invention. However, in terms of both the organization and the method of operation, the present invention together with the objectives, features and advantages of the present invention can be best understood with reference to the following detailed description when reading in conjunction with the accompanying drawings.

It will be appreciated that in order to illustrate concisely and clearly, the elements shown in the drawings are not necessarily drawn to scale. For example, the size of some elements may be exaggerated relative to other elements for clarity. In addition, it is deemed appropriate that element symbols may be repeated in the drawings to indicate corresponding or similar elements.

Since most of the illustrated embodiments of the present invention can be implemented by using electronic components and circuits known to those skilled in the art, in order to understand and understand the basic concept of the present invention and to avoid confusion or confusion in the teaching of the present invention. Ambiguity, in addition to considering the details that must be clarified, no more details will be given.

Any reference to the method in this manual should be changed as necessary to be applicable to the system capable of executing the method and should be changed as necessary to be applicable to non-transitory computer-readable instructions that store the instructions for executing the method. Take the media.

Any reference to the system in this manual should be changed as necessary to apply to the method that can be executed by the system and should be changed as necessary to apply to the computer-readable medium that is non-transitory and stores instructions that can be executed by the system.

Any references to non-transitory computer-readable media in this manual should be changed as necessary to apply to the method that can be applied when executing the instructions stored in the computer-readable media and should be changed as necessary to apply A system configured to execute instructions stored in a computer readable medium.

Fuzziness analysis:

It can provide systems, methods and computer-readable media for process monitoring.

Foreign material particles (hereinafter referred to as defects) may be made of one or more defective material elements. Defective material elements are material elements that belong to defects.

The electromagnetic emission spectrum of a part of the defect can be generated by applying a spectroscopic process.

Electromagnetic emission spectroscopy can provide an indication of one or more defective material elements.

However, the spectroscopy process may have a certain resolution. Therefore, there may be ambiguities in the electromagnetic emission spectrum. This ambiguity exists when the energy difference between the peaks (associated with different material elements) is less than the resolution of the spectroscopy process.

For example, the resolution of the spectroscopy process may be about 80 to 90 electron volts, and the spectroscopy process cannot distinguish between a group of lighter material elements and a group of heavier material elements, such as:

a. Either the lighter material element silicon (Si) and the heavier element tantalum (Ta) or tungsten (W).

b. Lighter material element nitrogen (N) and heavier element titanium (Ti).

c. Any one of the lighter material element oxygen (O) and the heavier element vanadium (V) or chromium (Cr).

d. Lighter material element fluorine (F) and heavier element iron (Fe).

e. Lighter material element sodium (Na) and heavier element zinc (Zn).

f. Lighter material element phosphorus (P) and heavier element zirconium (Zr).

The lighter material elements may be non-metallic, and the heavier material elements may be metallic, but this is not required. For example, germanium is quite heavy, but it is not a metal.

Examples of these ambiguities are shown in Table 1. In Table 1, each row includes a set of material elements, and these material elements exhibit energy peaks that are separated from each other by less than the energy difference of the spectral process resolution. It should be noted that when other landing energy is applied, other ambiguities may appear. Lighter material elements Heavier material elements Si Ta, W N Ti O V, Cr F Fe Na Zn P Zr

Table 1

It has been found that backscattered electron (BSE) images can account for analytical ambiguities and determine which defective material element appears in the electromagnetic emission spectrum. The decision may indicate the exact material element, or it may provide a rough classification of one of multiple types of material elements.

Referring to Table 1, for each of the above groups, the intensity (for example, gray scale) of the BSE image primitives of any one of the above lighter material elements in the group is basically different (for example, the difference is at least 10%, 20%, 30% or similar amount) in the group of the above-mentioned heavier material elements of the BSE image primitives.

Referring to the first row of Table 1, the intensity of the BSE image element of Si is basically different from the intensity of the BSE image element of Ta or W.

These intensity differences can be used alone or together with other information that can be obtained from BSE images and electromagnetic emission spectra to resolve ambiguities.

The additional information may be related to background material that can surround the defect. The material elements of the background material can be identified from the electromagnetic radiation spectrum of a part of the defect, because it is expected that at least some of the BSE electrons of the BSE image are extracted from the background material that can be positioned under the defect.

Usually, the background material is known in advance. However, even if you don't know it in advance, you can get the background material from the electromagnetic emission spectrum. Moreover, the relationship between the BSE image primitives of the background material and the defective BSE image primitives can be used to determine the relationship between the atomic weight of the defective material element and the atomic weight of the background material element.

For example, if the electromagnetic emission spectrum indicates that the background material is aluminum (Al), and the BSE image element of the defect is much brighter (stronger intensity) than the BSE image element of the background material, then the defect includes an element heavier than aluminum. If the defect is brighter than the background Si, and the defect contains a peak of Si or Ta or W in the electromagnetic spectrum, the defect contains Ta or W.

For example, if the electromagnetic emission spectrum indicates that the background material is not aluminum (Al) and the background material is Si, and if the BSE image element of the defect is much brighter (stronger intensity) than the BSE image element of the background material, then the defect Includes elements heavier than aluminum. Therefore, if the electromagnetic spectrum includes F or Fe, the defect includes Fe.

The following text explains the various methods. In order to simplify the description, each method refers to a single defective material element and at most describes a single ambiguity.

It should be noted that each method can be applied to each of multiple defective material elements and can resolve multiple ambiguities.

For example, the electromagnetic emission spectrum can include multiple ambiguities, and each method can resolve each ambiguity.

Figure 1 illustrates an example of a method 100 for determining defective material elements. The method 100 may be executed by processing logic such as a processing circuit, the processing logic may include one or more graphics processing units, one or more central processing units (CPUs), one or more image processors, and/or one or more Other integrated circuits (such as dedicated integrated circuits (ASIC), field programmable gate arrays (FPGA), fully customized integrated circuits, etc.), or a combination of such integrated circuits.

The method 100 can be started at step 110 by the following method: obtaining the electromagnetic emission spectrum of a part of the defect by using a charged particle beam system and by applying a spectroscopic process. The charged particle beam system is a system that obtains information about the object by irradiating an object with one or more charged particle beams and collects the particles and/or photons emitted from the object. The analysis of the detected particles can be done by the processing circuit of the charged particle beam system, by one or more processing circuits located outside the tool, or by a combination of the two.

Step 110 may include irradiating a part of the defect with one or more electron beams and collecting charged particles such as X-rays. X-rays can be collected during energy dispersive spectroscopy (EDX).

The step 110 may be followed by a step 120 of acquiring a backscattered electron (BSE) image of the area including the defect by a charged particle beam system.

The step 120 may be followed by a step 130 of determining the defective material element through a spectroscopic process. Step 120 is based on the results of steps 110 (using EDX) and 120.

Step 130 may include steps 132 and 140.

Step 132 may include determining whether there is ambiguity in the electromagnetic emission spectrum, that is, whether the energy difference between peaks (associated with different material elements) is less than the resolution of the spectroscopy process (whether there are overlapping electromagnetic emission readings).

If the answer is yes, then skip to step 140 of analyzing the ambiguity based on the BSE image: the information provided by the BSE image is used to distinguish materials with overlapping electromagnetic radiation readings. The result of step 140 is an unambiguous electromagnetic emission spectrum.

If the answer is no, then step 130 ends.

Step 140 may include selecting defective material elements from potential material elements, the potential material elements exhibiting peaks spaced apart from each other by an energy difference smaller than the resolution of the spectral process. You can view materials with known overlapping electromagnetic radiation readings. Each row of Table 1 is an example of such potential material elements.

For example, step 140 may include: (i) selecting a material element from F and Fe or (ii) from P and Zr or (iii) from N and Ti or (iv) from O and V or Cr.

Step 140 may include selecting defective material elements based on the intensities of the defective one or more BSE image primitives.

Step 140 may be based at least in part on background material elements. The area (imaged during step 120) may include the defect and background material surrounding the defect. Step 140 may include determining the background material element of the background material.

The background material element has an atomic weight belonging to the background atomic weight category (period of the periodic table of elements). Step 140 may include: determining the defect based on (a) the relationship between the intensity parameter of one or more BSE image primitives of the background material and (b) the intensity parameter of the defective one or more BSE image primitives The atomic weight category of the material element.

Brighter BSE image primitives indicate higher atomic weight, while darker BSE primitives indicate lower atomic weight.

Step 140 may include classifying the atomic weight category of the defective material element into at least one of the following categories: (a) lighter than the background material; (b) background atomic weight; and (d) heavier than the background material.

For example, the defective material elements can be classified (according to the intensity of BSE image primitives) into the following categories:

• The second period of the periodic table (for example, N, O, or F).

• The third period of the periodic table (for example, Si, P, or Na).

• The fourth period of the periodic table (for example, Ti, V, Cr, Fe, or Zn).

• The fifth period of the periodic table (for example, Zr).

• The sixth period of the periodic table (for example, Ta or W).

For another example, the defective material elements can be classified (according to the intensity of BSE image primitives) into the following categories:

• Lighter than the substrate, such as the second period of the periodic table (for example, N, O, or F).

• The same category as the substrate, such as the third period of the periodic table (for example, Si, P, or Na).

• Heavier than the substrate, such as the fourth, fifth or sixth period of the periodic table (e.g. Ti, V, Cr, Fe or Zn, Zr, Ta or W).

The result of step 130 may be to determine one or more defective material elements. This decision can be provided as a clear electromagnetic emission spectrum of part of the defect.

Following step 130 may be step 150 in response to the result of step 130. For example, step 150 may include generating and/or sending an alarm or indication of one or more material elements related to the defect, storing an unambiguous electromagnetic emission spectrum, storing an alarm or indication, executing another spectral process with different parameters, and/or Get another BSE image and similar steps. For example, another spectroscopy process may be performed with a higher landing voltage in order to view material elements that were difficult to see in the iterations of the previous spectroscopy process. For example, step 120 may involve applying a relatively low kV EDX in order to maintain a small amount of interaction and high sensitivity. But some elements, especially Ti, are challenging to see at low kV (overlapping peaks around 400V). Therefore, in the case where N or Ti is found in steps 120-140 at 3 kV, another EDX process is performed at a higher kV (about 6 kV), where there is an additional Ti peak (4.5 kV). If there is a 4.5kV peak, then it is Ti. If it cannot be found, then it is N.

For example, suppose the presence of defects with heavier material elements is more problematic than the presence of defects with lighter materials. Under this assumption, with regard to the response triggered by lighter defective material elements, the presence of heavier defective material elements may trigger a more impactful response.

The response may include: failing the wafer, determining that the wafer or die is qualified despite the defect, re-evaluating the manufacturing process and similar results.

Figure 2 illustrates a method 102 for determining defective material elements.

The method 102 can be started at step 112 by the following method: obtaining the electromagnetic emission spectrum of a part of the defect by using a charged particle beam system and by applying a spectroscopic process.

Step 112 may include irradiating a portion of the defect with one or more charged electron beams and collecting charged particles such as X-rays. X-rays can be collected during energy dispersive spectroscopy (EDX).

To simplify the description, it is assumed that step 112 involves applying an EDX process.

Step 112 may be followed by step 115 of determining whether there is ambiguity in the electromagnetic emission spectrum.

If there is no ambiguity, then step 115 can be followed by step 152.

If there is ambiguity (or more than one ambiguity), then step 115 is followed by step 122 of acquiring a BSE image of the area including the defect by the charged particle beam system.

Step 122 may be followed by step 142 of analyzing the blurriness based on the BSE image.

Following step 142 may be step 152 responsive to the result of at least one of steps 112 and 142.

In the method 102, the BSE image is acquired (in step 122) only in response to determining that there is ambiguity in the electromagnetic emission spectrum (in step 115). The method 110 is different from the method 112 because the BSE image is acquired (step 120) before deciding whether there is ambiguity in the electromagnetic emission spectrum (step 132). In the method 112, fewer BSE images can be acquired, so as to compare the number of BSE images acquired in the method 110, so the total duration of the method 112 may be shorter than the duration of the method 110.

FIG. 3 illustrates examples of BSE images 202-208 of various defects acquired by charged particle beams according to the method 110 or 112. The defects shown in the image include a variety of defective material elements.

The BSE image 202 illustrates a defect 210 including a variety of defective material elements. The BSE image 204 illustrates the edge of the defect. The BSE image 206 illustrates the area including the defect 210 surrounded by the silicon background material 216. The defect 210 includes a heavier material element 214 and a lighter material element 212. In other examples, different colors may be used to indicate different defective material elements.

It should be noted that any of the above methods can be modified, and the acquisition of one or more BSE images can be performed without checking whether there is ambiguity.

It should be noted that any of the above methods may or may not include generating a corrected EDX spectrum that takes into account the resolved ambiguity (if this is the case).

Surface information:

The acquisition of the BSE image of the area including the defect includes irradiating the area with a varying particle beam with landing energy, thereby causing BSE electrons to be emitted from the sample, and detecting at least some of the BSE electrons by the BSE detector.

The BSE electrons emitted from the sample can originate from the surface of the region or from different depths within the sample.

For example, at a landing energy of several kilovolts, most of the BSE electrons forming the BSE image are emitted to a position much lower than non-buried defects such as foreign particles.

If the defect is not a buried defect, or at least most of it is located above the sample surface, then it can be beneficial to collect BSE electrons that are emitted from the surface (and possibly reach the depth threshold), while rejecting (not detecting) those that exceed the depth threshold. Deep emission of BSE electrons.

This can be performed using low loss BSE imaging. Low-loss BSE spectroscopy involves using energy filtering and rejecting BSE electrons with energy below the energy threshold. The energy threshold can be set to be substantially equal to the incident energy. For example, the energy threshold can be equal to 60%-99% of the incident energy. Therefore, for a landing energy of 2kV, the energy threshold can be between 1.5kV and 1.95kV. Other energy thresholds can be applied.

This will cause the BSE image to be mostly formed by BSE electrons with energy above the energy threshold.

Energy filtering reduces the number of BSE electrons that reach the BSE filter, but it better represents the material element of the defect rather than the material of the substrate. This may be especially true for defects smaller than 100 nm.

Therefore, step 120 of either of the methods 100 and 102 may include acquiring a low-loss BSE image.

The BSE images 300, 302, 304, 306, 308, and 310 of FIG. 4 illustrate BSE images of an area including the defect 312. When different energy filters are applied, BSE images 302, 304, 306, 308, and 310 are acquired. BSE images 308 and 310 are acquired using a beam landing energy of 2kV and an energy filter between 1.5kV and 1.8kV. It can be seen that the BSE image 300 is mostly formed of BSE electrons emitted from the background material under the defect 312 because the intensity of the BSE image primitive of the defect 312 is very similar to the BSE image primitive of the background material 316.

On the other hand, the BSE images 308 and 310 clearly show that the defect 312 includes a high impedance (high Z) defect material element 316 and a low Z defect material element 318, both of which are completely distinguished from the background material.

FIG. 5 illustrates the object 440 and the charged particle beam system 400.

The charged particle beam system 400 may include a charged particle optical device and a processor. The charged particle beam system 400 may be configured to perform at least one of the methods 100 and 102.

In FIG. 5, the illustrated charged particle optical device includes an EDS detector 414 for detecting X-ray particles 426 and charged particle array 402.

The charged particle array 402 includes a beam source 404 for outputting a charged particle beam 420, a BSE detector 408 for detecting BSE electrons 422, and a filter for filtering the BSE electrons before they reach the BSE detector 408. Energy filter 410. FIG. 5 also illustrates a secondary electron detector 406 for detecting secondary electrons 424.

The charged particle optical device is configured to: (i) obtain the electromagnetic emission spectrum of a part of the defect by applying a spectroscopic process (irradiating the object with a charged particle beam 420 and detecting X-ray particles by the EDS detector 414); and ( ii) Acquire a backscattered electron (BSE) image of the area including the defect.

The processing circuit 412 can be configured to determine the defective material element in the following ways: (a) determine whether there is ambiguity in the electromagnetic emission spectrum; and (b) when it is determined that there is ambiguity, analyze the ambiguity based on the BSE image .

It should be noted that the charged particle beam system 400 may have other configurations. For example, instead of or in addition to the EDS detector, the charged particle beam system 400 may include an AES detector, there may be multiple BSE detectors, and there may be any spatial relationship between the column and the EDS detector, and Position the BSE detector in other places, the irradiation angle may not be perpendicular to the object, the charged particle beam system 400 may not have a secondary electron detector, and it may deflect and/or steer the beam in a manner not shown in FIG. 5 For either, there may be additional optical elements, such as condenser lenses or any other optical lenses or elements.

FIG. 5 also illustrates the defect 444 and the area 442 below the defect 444 from which BSE electrons can be emitted.

In the foregoing description, the present invention has been described with reference to specific examples of embodiments of the present invention. However, it will be clear that various modifications and changes can be made therein without departing from the broader spirit and scope of the present invention as set forth in the scope of the appended application.

In addition, the terms "front", "back", "top", "bottom", "above", "below" and similar terms (if any) in the specification and the scope of the patent application are used For descriptive purposes, it is not necessarily used to describe permanent relative positions. It will be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operating in orientations other than those shown or otherwise described herein.

The connection as discussed herein may be any type of connection suitable for transmitting signals from or to the corresponding node, unit or device, for example, via an intermediate device. Therefore, unless implied or stated otherwise, the connection may be, for example, a direct connection or an indirect connection. Connections can be explained or described with reference to being a single connection, multiple connections, one-way connections, or two-way connections. However, different implementations can change the implementation of the connection. For example, a separate one-way connection can be used instead of a two-way connection, and vice versa. Moreover, multiple connections can be replaced with a single connection that transmits multiple signals serially or in a time-multiplexed manner. Likewise, a single connection that carries multiple signals can be separated into various connections that carry a subset of these signals. Therefore, there are many options for transmitting signals.

Any arrangement of components that achieve the same functionality is effectively "associated" so that the desired functionality is achieved. Therefore, any two components combined herein to achieve a specific functionality can be regarded as "associated" with each other, so that the desired functionality is achieved, regardless of the architecture or intermediate components. Likewise, any two components so associated can also be regarded as being "operably connected" or "operably coupled" to each other to achieve the desired functionality.

In addition, those skilled in the art will recognize that the boundaries between the operations described above are only illustrative. Multiple operations can be combined into a single operation, a single operation can be distributed in additional operations, and the operations can be performed at least partially overlapping in time. In addition, alternative embodiments may include multiple instances of specific operations, and in various other embodiments, the order of operations may be changed.

Also, for example, in one embodiment, the illustrated example may be implemented as a circuit located on a single integrated circuit or within the same device. Alternatively, the examples may be implemented as any number of separate integrated circuits or separate devices interconnected with each other in a suitable manner.

However, other modifications, changes and substitutions are also possible. Therefore, the specification and the drawings are regarded as illustrative rather than restrictive.

In the request item, any component symbols placed in parentheses shall not be construed as a restriction request item. The word "include" does not exclude the existence of elements or steps other than those listed in the request. In addition, the term "a" or "an" as used herein is limited to one or more than one. In addition, the use of introductory phrases such as "at least one" and "one or more" in a claim should not be construed as implying that the introduction of another claim element by the indefinite article "a" or "a" will include such Any particular claim element of the introduced claim element is restricted to an invention containing only one such element, even if the same claim includes the introductory phrase "one or more" or "at least one" and indefinite articles (such as "one" or "One") is the same. The same is true for the use of definite articles. Unless otherwise stated, terms such as "first" and "second" are used to arbitrarily distinguish the elements described by such terms. Therefore, these terms are not necessarily intended to indicate the timing or other priorities of such elements. The fact that certain measures are stated in mutually different claims does not mean that a combination of these measures cannot be used to advantage.

Although certain features of the present invention have been illustrated and described herein, those of ordinary skill in the art will now think of many modifications, substitutions, changes, and equivalent forms. Therefore, it will be understood that the scope of the appended patent application is intended to cover all such modifications and changes that fall within the true spirit of the present invention.

100: method 110: Step 112: Step 115: steps 120: Step 122: Step 130: steps 132: Step 140: Step 150: step 152: Step 202: BSE image 204: BSE image 206: BSE image 210: defect 212: Lighter material elements 216: Silicon background material 300: BSE image 302: BSE image 304: BSE image 306: BSE image 308: BSE image 310: BSE image 312: Defect 316: background material 318: Low Z defect material element 400: Charged particle beam system 402: Charged Particle Column 404: beam source 406: Secondary Electron Detector 408: BSE detector 410: Energy Filter 412: Processing Circuit 414: EDS detector 420: Charged Particle Beam 422: BSE Electronics 424: Secondary Electron 426: X-ray particles 440: Object 442: area 444: defect

In the conclusion part of this specification, it is specifically pointed out and clearly claimed as the subject matter of this case. However, in terms of both organization and method of operation, the present invention together with the objectives, features and advantages of the present invention can be best understood with reference to the following specific descriptions when reading in conjunction with the accompanying drawings, in the accompanying drawings:

Figure 1 illustrates an example of a method for determining defective material elements;

Figure 2 illustrates an example of a method for determining defective material elements;

FIG. 3 illustrates examples of various images of defects including multiple defective material elements;

Figure 4 illustrates various examples of BSE (Backscattered Electron) images; and

Figure 5 illustrates an example of a charged particle beam system.

Domestic deposit information (please note in the order of deposit institution, date and number) none Foreign hosting information (please note in the order of hosting country, institution, date, and number) none

100: method

110: Step

112: Step

115: steps

120: Step

122: Step

130: steps

132: Step

140: Step

150: step

Claims (13)

A method for determining a defect material element of a defect, the method comprising the steps of: obtaining an electromagnetic emission spectrum of a part of the defect by a charged particle beam system and by applying a spectroscopic process; by using the charged particle beam The system acquires a backscattered electron (BSE) image of a region including the defect; and analyzes based on the BSE image by determining whether there is a ambiguity in the electromagnetic emission spectrum and responding to the determination that the ambiguity exists The ambiguity determines the defective material element; wherein the step of obtaining the BSE image includes the following steps: irradiating the area with electrons having an incident energy, and basically only from BSE electrons having an energy higher than an energy threshold The BSE image is generated. The method according to claim 1, wherein the step of analyzing the ambiguity includes the following steps: selecting the defective material element from potential material elements, the potential material elements exhibiting each other with an energy difference smaller than a resolution of the spectroscopic process Spaced peaks. According to the method of claim 2, wherein the potential material elements include an organic material element and a heavier material element. The method according to claim 1, wherein the step of analyzing the ambiguity includes the following steps: selecting the defective material element based on an intensity of one or more BSE image primitives of the defect. The method according to claim 1, wherein the area includes the defect and a background material surrounding the defect, and wherein the method includes Next step: Determine a background material element of the background material. The method according to claim 5, wherein the defective material element is determined based on the background material element. The method according to claim 6, wherein the background material element has an atomic weight belonging to a background atomic weight category, and wherein the step of determining the defective material element includes the following steps: (a) one or more BSE images of the background material A relationship between an intensity parameter of the image element and (b) the intensity parameter of one or more BSE image elements of the defect determines an atomic weight category of the defective material element. The method according to claim 7 includes the following steps: classifying the atomic weight category of the defective material element into one of the following categories: (a) a lighter category than the background material; (b) the background atomic weight category; and (d) At least one of the categories is heavier than the background material. A method for determining a defect material element of a defect, the method comprising the steps of: obtaining an electromagnetic emission spectrum of a part of the defect by a charged particle beam system and by applying a spectroscopic process; by using the charged particle beam The system acquires a backscattered electron (BSE) image of a region including the defect; and analyzes based on the BSE image by determining whether there is a ambiguity in the electromagnetic emission spectrum and responding to the determination that the ambiguity exists The ambiguity determines the defective material element; the area includes the defect and a background material surrounding the defect, and the method includes the following steps: determining a background of the background material Material element; and the background material is silicon, wherein the step of determining the defective material element includes the following steps: classifying the defective material element into one of the following categories: (a) the second period of the periodic table; (b) The third period of the periodic table of the elements; (c) the fourth period of the periodic table of the elements; and (d) the sixth period of the periodic table of the elements. The method according to claim 9 includes the following steps: determining whether the ambiguity exists in the electromagnetic emission spectrum; and acquiring the BSE image in response to the existence of the ambiguity in the electromagnetic emission spectrum. A method for determining a defect material element of a defect, the method comprising the following steps: obtaining an electromagnetic radiation spectrum of a part of the defect by a charged particle beam system and by applying a spectroscopic process; The system acquires a backscattered electron (BSE) image of a region including the defect; and analyzes based on the BSE image by determining whether there is a ambiguity in the electromagnetic emission spectrum and responding to the determination that the ambiguity exists The ambiguity determines the defective material element; wherein the step of obtaining the BSE image includes the following steps: rejecting BSE electrons originating from a position located below a certain depth from a surface of the region. A non-transitory computer-readable medium. The non-transitory computer-readable medium includes instructions that, when executed by a processor, cause the processor to perform operations, and the operations include the following operations: Acquire an electromagnetic emission spectrum of a part of a defect; acquire a backscattered electron (BSE) image of a region including the defect; Fuzziness is analyzed based on the BSE image to determine a defective material element; wherein the step of obtaining the BSE image includes the following steps: irradiating the area with electrons with an incident energy, and basically BSE electrons of an energy at an energy threshold produce the BSE image. A charged particle beam system. The charged particle beam system includes a charged particle optical device and a processor, wherein the processor is configured to: obtain an electromagnetic emission spectrum of a part of a defect by applying a spectroscopy process; A backscattered electron (BSE) image of a region of the defect; and by determining whether there is a ambiguity in the electromagnetic emission spectrum and analyzing the ambiguity based on the BSE image in response to determining that the ambiguity exists, Determine a defective material element; wherein the step of acquiring the BSE image includes the following steps: irradiating the area with electrons having an incident energy, and basically generating the BSE image only from BSE electrons having an energy higher than an energy threshold picture.

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