TWI743262B - 用於電子束系統中之像差校正之系統 - Google Patents

用於電子束系統中之像差校正之系統 Download PDF

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Publication number
TWI743262B
TWI743262B TW106142684A TW106142684A TWI743262B TW I743262 B TWI743262 B TW I743262B TW 106142684 A TW106142684 A TW 106142684A TW 106142684 A TW106142684 A TW 106142684A TW I743262 B TWI743262 B TW I743262B
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TW
Taiwan
Prior art keywords
optical system
wien filter
deflector assembly
electron
electron beam
Prior art date
Application number
TW106142684A
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English (en)
Chinese (zh)
Other versions
TW201833969A (zh
Inventor
辛容 姜
克里斯多福 希爾斯
Original Assignee
美商克萊譚克公司
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Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201833969A publication Critical patent/TW201833969A/zh
Application granted granted Critical
Publication of TWI743262B publication Critical patent/TWI743262B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1508—Combined electrostatic-electromagnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW106142684A 2016-12-07 2017-12-06 用於電子束系統中之像差校正之系統 TWI743262B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/371,557 2016-12-07
US15/371,557 US10090131B2 (en) 2016-12-07 2016-12-07 Method and system for aberration correction in an electron beam system

Publications (2)

Publication Number Publication Date
TW201833969A TW201833969A (zh) 2018-09-16
TWI743262B true TWI743262B (zh) 2021-10-21

Family

ID=62243018

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106142684A TWI743262B (zh) 2016-12-07 2017-12-06 用於電子束系統中之像差校正之系統

Country Status (7)

Country Link
US (1) US10090131B2 (enExample)
EP (1) EP3552222A4 (enExample)
JP (2) JP2019537228A (enExample)
KR (1) KR102325235B1 (enExample)
CN (1) CN110036456B (enExample)
TW (1) TWI743262B (enExample)
WO (1) WO2018106833A1 (enExample)

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US10338013B1 (en) * 2018-01-25 2019-07-02 Kla-Tencor Corporation Position feedback for multi-beam particle detector
JP7265646B2 (ja) * 2019-03-27 2023-04-26 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置における二次ビームのアライメントのためのシステム及び方法
US11791128B2 (en) * 2021-10-13 2023-10-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Method of determining the beam convergence of a focused charged particle beam, and charged particle beam system
US12165831B2 (en) 2022-05-31 2024-12-10 Kla Corporation Method and system of image-forming multi-electron beams
US12283453B2 (en) 2022-06-01 2025-04-22 Kla Corporation Creating multiple electron beams with a photocathode film
US20250357066A1 (en) * 2024-05-17 2025-11-20 Kla Corporation Electron beam metrology having a source energy spread with filtered tails
US20250357067A1 (en) * 2024-05-17 2025-11-20 Kla Corporation Aberration corrector for scanning electron microscope with multiple electron beams

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US4710639A (en) * 1985-04-18 1987-12-01 Jeol Ltd. Ion beam lithography system
US20030098415A1 (en) * 2001-10-26 2003-05-29 Jeol Ltd. Aberration corrector for instrument utilizing charged-particle beam
US20100065753A1 (en) * 2008-09-12 2010-03-18 Hitachi High-Technologies Corporation Charged particle beam apparatus
TW201214497A (en) * 2010-05-07 2012-04-01 Integrated Circuit Testing Electron beam device with dispersion compensation, and method of operating same
CN103703537A (zh) * 2011-07-20 2014-04-02 株式会社日立高新技术 扫描电子显微镜及扫描透过电子显微镜
TW201428807A (zh) * 2012-11-30 2014-07-16 Kla Tencor Corp 傾斜成像掃瞄電子顯微鏡
US20160329189A1 (en) * 2015-05-08 2016-11-10 Kla-Tencor Corporation Method and System for Aberration Correction in an Electron Beam System

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JP2821153B2 (ja) * 1988-11-24 1998-11-05 株式会社日立製作所 荷電粒子線応用装置
KR19980079377A (ko) * 1997-03-25 1998-11-25 요시다쇼이치로 하전립자선 전사장치
US6452175B1 (en) * 1999-04-15 2002-09-17 Applied Materials, Inc. Column for charged particle beam device
US6552340B1 (en) * 2000-10-12 2003-04-22 Nion Co. Autoadjusting charged-particle probe-forming apparatus
DE10061798A1 (de) * 2000-12-12 2002-06-13 Leo Elektronenmikroskopie Gmbh Monochromator für geladene Teilchen
JP4103345B2 (ja) * 2001-06-12 2008-06-18 株式会社日立製作所 荷電粒子線装置
JP3914750B2 (ja) * 2001-11-20 2007-05-16 日本電子株式会社 収差補正装置を備えた荷電粒子線装置
US6924488B2 (en) * 2002-06-28 2005-08-02 Jeol Ltd. Charged-particle beam apparatus equipped with aberration corrector
JP4310250B2 (ja) * 2004-08-30 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線調整方法及び荷電粒子線装置
JP4922747B2 (ja) * 2006-12-19 2012-04-25 日本電子株式会社 荷電粒子ビーム装置
EP2325862A1 (en) * 2009-11-18 2011-05-25 Fei Company Corrector for axial aberrations of a particle-optical lens
US8735814B2 (en) * 2010-10-15 2014-05-27 Hitachi High-Technologies Corporation Electron beam device
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
JP6002428B2 (ja) * 2012-04-24 2016-10-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6265643B2 (ja) * 2013-07-31 2018-01-24 株式会社日立ハイテクノロジーズ 電子ビーム装置
JP6178699B2 (ja) * 2013-11-11 2017-08-09 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6254445B2 (ja) * 2014-01-09 2017-12-27 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置
US9443696B2 (en) 2014-05-25 2016-09-13 Kla-Tencor Corporation Electron beam imaging with dual Wien-filter monochromator
JP6320186B2 (ja) * 2014-06-16 2018-05-09 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP6554288B2 (ja) 2015-01-26 2019-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US10366862B2 (en) * 2015-09-21 2019-07-30 KLA-Tencor Corporaton Method and system for noise mitigation in a multi-beam scanning electron microscopy system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710639A (en) * 1985-04-18 1987-12-01 Jeol Ltd. Ion beam lithography system
US20030098415A1 (en) * 2001-10-26 2003-05-29 Jeol Ltd. Aberration corrector for instrument utilizing charged-particle beam
US20100065753A1 (en) * 2008-09-12 2010-03-18 Hitachi High-Technologies Corporation Charged particle beam apparatus
TW201214497A (en) * 2010-05-07 2012-04-01 Integrated Circuit Testing Electron beam device with dispersion compensation, and method of operating same
CN103703537A (zh) * 2011-07-20 2014-04-02 株式会社日立高新技术 扫描电子显微镜及扫描透过电子显微镜
TW201428807A (zh) * 2012-11-30 2014-07-16 Kla Tencor Corp 傾斜成像掃瞄電子顯微鏡
US20160329189A1 (en) * 2015-05-08 2016-11-10 Kla-Tencor Corporation Method and System for Aberration Correction in an Electron Beam System

Also Published As

Publication number Publication date
EP3552222A1 (en) 2019-10-16
JP2022058942A (ja) 2022-04-12
KR102325235B1 (ko) 2021-11-10
US10090131B2 (en) 2018-10-02
CN110036456A (zh) 2019-07-19
JP7194849B2 (ja) 2022-12-22
EP3552222A4 (en) 2020-07-22
US20180158644A1 (en) 2018-06-07
JP2019537228A (ja) 2019-12-19
WO2018106833A1 (en) 2018-06-14
TW201833969A (zh) 2018-09-16
CN110036456B (zh) 2022-04-05
KR20190085157A (ko) 2019-07-17

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