TWI740359B - Light emitting diode packaging device and manufacturing method thereof - Google Patents

Abstract

A light emitting diode (LED for short) packaging device includes a substrate, at least one metal boss, at least one LED chip, and a packaging glue. The substrate includes an upper surface and a lower surface that are opposite to each other. The at least one metal boss is arranged on the upper surface of the substrate. The at least one LED chip is arranged on the at least one metal boss. The packaging glue covers the at least one LED chip, the at least one metal boss and the substrate. Wherein, the at least one metal boss has a pattern structure, and the encapsulant and the at least one metal boss with the pattern structure form a snap connection. The pattern structure of the at least one metal boss is used to strengthen the adhesion strength between the metal boss and the substrate and the packaging glue. The present invention also includes a manufacturing method of the LED package device.

Description

Light emitting diode packaging device and manufacturing method thereof

The present invention relates to a packaged device, especially an LED packaged device and a manufacturing method of the LED packaged device.

With the improvement of technology, the cost reduction and efficiency improvement of deep ultraviolet LED lamps, deep ultraviolet LEDs are more and more widely used. In particular, the time limit for traditional mercury lamps to withdraw from the market is getting closer, and the demand for deep ultraviolet LED lamps is on the eve of the outbreak.

The existing deep ultraviolet LED packaging components are mainly ceramic packaging cups and quartz glass. However, the ceramic package cup and the quartz glass have the disadvantages of being too large and expensive, and because the light first goes from sapphire to air, and then to the quartz glass, the light extraction efficiency of the package body is low.

In addition, there are some deep-ultraviolet LED package components, which are packaged with a flat ceramic substrate and a molded silicone package. The main disadvantage of this type of package is that deep ultraviolet light (below 290nm) is very destructive to silicone. Silicone is prone to cracking when exposed to deep ultraviolet light for a long time, and the transmittance of silicone to deep ultraviolet light is relatively low. Another commonly used encapsulant is a fluorine-containing material, but the fluorine-containing material is particularly difficult to process due to the problem of low adhesion, and it is prone to cut off, vibration off, and reflow bubbles during cutting.

Therefore, one of the objectives of the present invention is to provide a light emitting diode (LED) package device that can at least overcome the disadvantages of the prior art.

The LED packaging device includes a substrate, at least one metal boss, at least one LED chip, and a packaging glue.

The substrate includes an upper surface and a lower surface that are opposite to each other.

The at least one metal boss is arranged on the upper surface of the substrate.

The at least one LED chip is arranged on the metal boss.

The packaging glue covers the at least one LED chip, the at least one metal boss and the substrate.

Wherein, the at least one metal boss has a pattern structure, and the encapsulant and the at least one metal boss with the pattern structure form a snap connection.

Therefore, another object of the present invention is to provide a method for manufacturing an LED package device that can at least overcome the disadvantages of the prior art.

Therefore, the manufacturing method of the LED package device of the present invention includes (a) providing a substrate having an upper surface and a lower surface; (b) forming at least one metal boss on the upper surface of the substrate; (c) Disposing at least one LED chip on the metal boss; (d) covering the at least one LED chip, the at least one metal boss and the substrate with a packaging glue, wherein the at least one metal boss has a With a pattern structure, the packaging glue forms a snap connection with the at least one metal boss having the pattern structure.

The effect of the present invention is that the method of the present invention forms a pattern in the at least one metal boss, and the encapsulant not only covers the at least one LED chip, the at least one metal boss and the substrate, but also fills the at least one metal boss The gap between the two and the hole formed by the pattern in the at least one metal boss, thereby forming a snap connection between the packaging glue and the at least one metal boss. The adhesive force of the encapsulation body is increased, and the problems of the encapsulation body such as vibration and fall off during the transportation or transmission of the encapsulation body are effectively prevented. Due to the close bonding between the encapsulant and the at least one LED chip, the metal boss and the substrate, defects such as reflow bubbles and the like when soldering pads are formed on the lower surface of the substrate by reflow soldering technology are effectively avoided, thereby Ensure the yield of subsequent products. During cutting, the above-mentioned snap connection between the packaging glue and the at least one metal boss can play a blocking role, effectively reducing the amount of deformation at the bottom of the packaging glue, and ensuring that the die bonding area close to the at least one metal boss is ensured The packaging glue is tightly combined with the substrate and will not peel off from the substrate due to cutting force. When the packaging colloid undergoes a large temperature change, although the thermal expansion coefficients of the ceramic substrate and the packaging colloid made of fluororesin materials used in the present invention differ greatly, the difference between the packaging colloid and the at least one metal boss is A snap connection can be formed therebetween, so that the deformation of the packaging glue outside the at least one metal boss can be effectively reduced, thereby avoiding a gap between the packaging glue and the substrate. In addition, the preparation method of the LED package device of the present invention has a relatively simple process and a good packaging effect, which is beneficial to reduce packaging costs and increase economic benefits.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numbers.

The refractive index n of the inorganic fluororesin material is about 1.34, the ultraviolet light transmittance is high, and the reliability is good. Therefore, the fluororesin material is a very good deep ultraviolet LED packaging material. However, fluorine-containing materials are particularly difficult to process due to adhesion problems, and are prone to problems such as cut-off, vibration-off, and reflow bubbles.

The first embodiment

A first embodiment of the manufacturing method of the LED package device of the present invention, as shown in FIGS. 1-4, the first embodiment includes the following steps:

A substrate 10 is provided. The substrate 10 includes an inverted upper surface 103 and a lower surface 104. The substrate 10 can be made of materials commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.

As shown in FIG. 2, a plurality of metal protrusions 20 are formed on the upper surface 103 of the substrate 10. As shown in FIG. 2, there is a first interval 101 between two adjacent metal protrusions 20, that is, the metal protrusions 20 are arranged at intervals at the first pitch L1.

Next, as shown in FIG. 3, a plurality of LED chips 30 are respectively arranged on the metal boss 20. In this embodiment, each LED chip is a flip-chip LED chip. It should be noted that the number of the metal bosses 20 is not limited to multiple, and in other variations of this embodiment, it can also be one; and the number of the LED chips 30 can also correspond to the metal bosses. The number of 20 is one.

Referring to Fig. 6, a schematic view of the structure of the circled part in Fig. 3 cut along the A-A direction is shown. 6 shows that the metal boss 20 and the LED chip 30 are one, the metal boss 20 includes a die-bonding area 201, and an isolation band 203; and the metal boss 20 includes a A pattern structure 200 of a plurality of pores 2001. The die bonding area 201 is arranged in the middle part of the substrate, so that the metal boss 20 includes the middle part for setting the corresponding die bonding area 201 of the flip-chip LED chip 30, and the die bonding area 201 includes A positive electrode bonding region 2011 and a negative electrode bonding region 2012 are arranged oppositely (the positions of the positive electrode bonding region 2011 and the negative electrode bonding region 2012 may not be the positive electrode bonding region 2011 on the right side and the positive electrode bonding region 2011 on the left side as shown in the figure. For the negative die-bonding zone 2012, the polarity of the die-bonding zone 201 is determined by the positive and negative poles of the LED chip 30 flip-chip mounted on it. This is only for the convenience of explaining the positive and negative die-bonding regions in the definition diagram. Position), the LED chip 30 is a flip-chip LED chip, including a positive electrode (not shown in the figure) and a negative electrode (not shown in the figure). The negative die bonding area 2012 is connected. As shown in FIG. 6, a second gap 102 is defined between the positive die bonding region 2011 and the negative die bonding region 2012, that is, a second gap L2 is defined between the positive die bonding region 2011 and the negative die bonding region 2012. The second distance L2 and the first distance L1 between the metal bosses 20 shown in FIG. 2 can be determined according to the actual size of the LED chip and the size requirements of the packaged device to be formed. In addition, specifically, the metal boss 20 further has a metal connection region 206 connected between the isolation band 203 and the die bonding region 201. A width Lc of the metal connection region 206 is less than 1/2 of a width Lm of the die bonding region 201.

Still referring to FIG. 6, the isolation band 203 is disposed on the edge portion of the substrate 10, so that the edge portion of the metal boss 20 is formed with the isolation band 203, and a recess is defined between the isolation band 203 and the die bonding region 201 In the region 204, the depth of the recessed region is at least less than one of the thickness of the isolation band 203 and the thickness of the die bonding region 201, and the thickness of the isolation band 203 and the die bonding region 201 are equal. Preferably, the depth/width ratio of the recessed area 204 is not less than 1/2, wherein the depth of the recessed area 204 is equal to the height of the metal boss. Preferably, the thickness of the metal boss 20 is 35 μm or more, more preferably, the thickness of the metal boss 20 is 45 μm or more, for example, the thickness of the metal boss 20 is 60 μm. On the other hand, the substrate 10 has an outer circumferential length Ls, the metal boss 20 has an outer circumferential surface 207 and an inner surface 208 located in the outer circumferential surface 208 and surrounded by the outer circumferential surface 207. The inner side surface 208 has a total inner length Li measured parallel to the extension direction of the upper surface 103 of the substrate 10 (that is, the outer perimeter length of the outer peripheral surface 207 is not counted), and the metal boss The total inner length Li of the inner side surface 208 of the 20 is greater than the outer circumferential length Ls of the substrate 10.

As shown in FIG. 6, in this embodiment, the isolation belt 203 can be roughly divided into a two-part structure of a first part 2032 and a second part 2033 spaced apart from each other, both of which have similar L-shaped structures. That is, the first part 2031 has an L-shaped structure, and the second part 2033 also has an L-shaped structure. In addition, the first portion 2032 of the isolation band 203 is integrally connected with the positive die bonding region 2011 to form a continuous structure, and the second portion 2033 of the isolation band 203 and the negative die bonding region 2012 form a continuous structure. Since the positive electrode bonding region 2011 and the negative electrode bonding region 2012 are respectively connected to the anode and the negative electrode of the LED chip 30, the first part 2032 and the second part 2033 of the isolation band are respectively located in the positive electrode bonding region 2011 and The negative electrode bonding region 2012 is connected in the same body to form a continuous structure. Therefore, the isolation band 203 can be used as the electrode region 202 of the LED chip 30, more specifically, it is connected in the same body to the positive electrode bonding region 2011 to form a continuous isolation. The first part 2032 of the belt forms the positive electrode area of the LED chip 30, and the second part of the continuous isolation belt is formed in a single body connection with the negative electrode bonding area 2012 to form the negative electrode area of the LED chip 30.

The first embodiment is mainly as follows: first, a thin metal layer is formed on the substrate 10 by ion sputtering technology, and then electroplating or electroless plating is used to form the metal boss 20 in this embodiment. Specifically, the following steps may be included:

Firstly, a mask with a corresponding pattern structure corresponding to the pattern structure 200 is made, and the mask is attached to the upper surface 103 of the substrate 10; for example, an adhesive can be used to attach the mask Attached to the upper surface 103 of the substrate 10.

The upper surface 103 of the substrate 10 to which the mask has been attached is plated with a metal layer, for example, ion sputtering is used to form a metal film with the pattern structure on the upper surface 103 of the substrate 10; the metal film In order to form a thin metal layer on the substrate 10, the thickness of the metal film is 10 to 200 μm.

Continue to plate a metal layer on the metal film to increase the thickness of the metal film. For example, electroplating or electroless plating is used to plate the metal layer on the metal film to increase the overall thickness until the metal film is formed. Metal boss 20.

Also referring to FIG. 6, this embodiment also includes an electrostatic protection device (Zener) packaging area 205 located on one side of the isolation belt 203 of the metal boss 20, and a Zener packaging area 205 can be packaged in the protection device packaging area 205. The protection device is used to protect the entire LED package device. For example, the electrostatic device package area 205 may be arranged at a corner position of one side of the isolation belt 203.

Then, as shown in FIG. 4, the encapsulant 40 is covered on the LED chip 30, the metal boss 20 and the exposed substrate 10. In this embodiment, the encapsulant 40 is made of fluororesin material. Afterwards, an LED package body that has covered the encapsulation body 40 is heated, for example, vacuum pressure (pressing in a vacuum environment), solution baking, or hot pressing can be used to make the encapsulation body 40 fill the adjacent metal The first gap 101 between the bosses 20 and the second gap 102 in the inner die-bonding region 201 of the metal boss 20, the recessed area 204 between the isolation band 202 and the die-bonding region 201, and The gap between the first part 2032 and the second part 2033 of the isolation belt 203 and so on. After the heating process, the encapsulant 40 forms a good contact with the LED chip 30, the metal boss 20 and the substrate 10. Then, the packaging glue 40 is cooled, so that the packaging glue 40 adheres to the LED chip 30, the metal boss 20 and the substrate 10, and the packaging glue 40 is filled with the metal boss The recessed area 204, the gap, etc. of 20 can form a snap connection with the metal boss 20. The snap connection can increase the adhesive force of the packaging glue 40 and effectively prevent the packaging glue 40 from being transported or transported. Problems such as the encapsulation gel falling off due to vibration occur.

In addition, because the expansion coefficient of ceramics is 1.8*10 ^-5 /℃, the thermal expansion coefficient of fluororesin materials is generally 8～12*10 ^-5 /℃. In the above-mentioned large temperature change of heating and cooling, the snap connection between the encapsulation gel 40 and the metal boss 20 can effectively reduce the deformation of the encapsulation gel 40 outside the metal boss 20 Therefore, a gap between the packaging glue 40 and the substrate 10 is avoided.

In this embodiment, the metal bosses 20 formed on the substrate 10 have the same thickness, and the thickness of the metal bosses 20 (that is, the isolation band 203 and the die-bonding region 201 therein) is not less than that of the package The thickness of the colloid 40 is 0.1 times and not greater than the thickness of the packaging colloid 40. The total thickness of the metal boss 20 and the packaging colloid 40 at the edge (that is, the metal boss 20 and the packaging colloid 40 are at The total coverage thickness on the edge of the substrate 10) is not greater than 0.1 mm, and the width of the metal boss 20 is not less than the maximum thickness of the packaging gel 40 (the packaging gel 40 directly contacts the substrate 10 at the edge The substrate 10 has 1/3 of the maximum thickness measured from the edge of the substrate 10 along the cutting direction F). The width of the metal boss 20 means that the metal boss 20 is perpendicular to the distance from the substrate 10 The upper surface 103 extends to the width value measured in the cutting direction of the lower surface 104 (refer to the cutting direction F shown in FIG. 4).

In another variation of this embodiment, as shown in FIG. 5, the substrate 10 includes a plate portion 105 having the upper surface 103 and the lower surface 104, and a plate portion 105 formed on the plate portion 105 and penetrating through the plate portion 105. The conductive portion 60 on the upper surface 103 and the lower surface 104 of the board body, and a pad 50 on the lower surface 104 of the board body portion 105. The manufacturing steps of this variation mainly include: first forming the conductive portion 60 on the plate portion 105, and the conductive portion 60 includes a positive electrode conductive portion and a negative electrode conductive portion that are respectively connected to the positive electrode and the negative electrode of the LED chip 30. The conductive portion 60 is a conductive hole that penetrates the board body portion 105 and the like.

Then, the pad 50 is formed on the lower surface 104 of the plate body portion 105, and the pad 50 includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion of the conductive portion 60. For example, in the structure shown in FIG. 6, the conductive portion 60 is connected to the positive and negative electrodes of the LED chip 30 by directly contacting the isolation tape 203 at the top, and is in direct contact with the pad 50 by the bottom. The conductive portion 60 is conductive, so that the bonding pad 50 is connected to the positive electrode and the negative electrode of the LED chip 30.

As described above, after the bonding pad 50 is formed on the lower surface 104 of the board body portion 105, it is convenient to subsequently form the LED package device into a subsequent surface mount device. And using reflow soldering technology, the above-mentioned LED package device is soldered to a PCB (Printed Circuit Board) board. Due to the buckle connection formed between the encapsulant 40 and the metal boss 20, the encapsulant 40, the substrate 10, the metal boss 20 and the LED chip 30 are tightly bonded, so that During the above-mentioned reflow soldering process, no defects such as bubbles will be generated, so the yield of the later product can be improved accordingly.

Second embodiment

The similarities between this embodiment and the first embodiment will not be repeated here, and the differences are:

In this embodiment, when the metal boss 20a is formed, various pattern structures are formed in the isolation band 203a of the metal boss 20a. As shown in FIG. 7, two pattern structures are formed in the isolation belt 203a. Specifically, each pattern structure includes a strip structure 2032a and a zigzag pattern 2031a. The zigzag pattern 2031a includes a plurality of zigzags extending inwardly from the belt-like structure, or zigzags extending outwardly from the belt-like structure. It should be noted that the isolation belt 203a may also be one of the pattern structures including the zigzag pattern 2031a.

4, after the zigzag pattern 2031a is formed, the packaging glue 40 is filled in the gap defined by the zigzag pattern 2031a, thereby enhancing the buckle between the packaging glue 40 and the metal boss 20a The connection strength enhances the bonding strength between the encapsulant 40 and the metal boss 20a and the substrate 10.

In a variation of this embodiment, as shown in FIG. 8, each pattern structure in the isolation belt 203 b includes the strip structure and a hollow pattern 2031 b formed on the strip structure. The hollow pattern 2031b may be a hollow pattern formed by a plurality of spaced rectangles, or a plurality of spaced diamonds, a plurality of spaced ellipses, a plurality of spaced circles, and other hollow patterns.

In another variation of this embodiment, as shown in FIG. 9, when forming the metal bosses 20c, in order to prevent the L-shaped structure formed by the isolation belt 203c from occupying too much area, the L-shaped structure The hollow pattern is also formed on one side, for example, a circular and/or rectangular hollow pattern 2031c is formed.

With reference to FIG. 4, after the hollow patterns 2031b, 2031c are formed, the encapsulant 40 is filled in the holes formed by the hollow patterns, thereby enhancing the buckle between the encapsulant 40 and the metal bosses 20b, 20c The connection strength further enhances the bonding strength between the packaging glue 40, the metal bosses 20b, 20c and the substrate 10.

The third embodiment

The similarities between this embodiment and the second embodiment will not be repeated here, and the differences are as follows:

As shown in FIG. 10, in the present embodiment, when the metal boss 20d is formed, the die bonding area 201d and the isolation belt 203d are also connected in the same body to form a continuous structure, and there is no recessed area between the two. The die-bonding region 201d and the separation band 203d respectively form two parts spaced apart from each other as a whole. The part of the isolation band 203d that is connected in the same body as 2011d and is continuous can be used as the positive electrode area of the LED chip 30 (as shown in FIG. As the negative electrode area of the LED chip 30.

In this embodiment, a hollow pattern is also formed in the isolation belt 203d of the metal boss 20d, such as a rectangular hollow pattern 2031d shown in FIG. 10. Of course, it may also include hollow patterns in other shapes such as diamonds, circles, ellipses, and the like.

With reference to FIG. 4, the packaging glue 40 is filled in the hole formed by the hollow pattern 2031d, thereby enhancing the buckle connection strength between the packaging glue 40 and the metal boss 20d, and enhancing the packaging glue 40, The bonding strength between the metal boss 20d and the substrate 10 is described.

Fourth embodiment

The similarities between this embodiment and the first embodiment will not be repeated here, and the differences are:

As shown in FIG. 11, the metal boss 20e also includes the die bonding region 201e and the isolation band 203e. In this embodiment, the isolation band 203e forms a closed surrounding structure and is mutually connected with the die bonding region 201e. Space, the recessed area 204 is defined between the isolation belt 203e and the die bonding area 201e, and the recessed area 204 is used for separation. The pattern structure can be formed in the isolation belt 203e, for example, the rectangular hollow pattern 2031e shown in FIG. 11, and of course other shapes (such as rhombus, ellipse, circle, etc.) hollow patterns can also be formed. Also, a zigzag pattern similar to that shown in FIG. 7 may be formed.

In this embodiment, since the die bonding region 201e and the isolation band 203e are separated from each other, they are not connected and discontinuous in structure, so they cannot form an electrically conductive structure. Therefore, in this embodiment, The positive electrode bonding area 2011e connected to the positive electrode of the LED chip 30 (as shown in FIG. 4) forms the positive electrode area of the LED chip 30, and the negative electrode bonding area 2012e connected to the negative electrode of the LED chip 30 forms the LED The negative electrode area of the wafer 30.

Referring to FIG. 5 again, in this embodiment, the conductive portion 60 is formed to communicate with the positive and negative electrodes of the LED chip 30 through the die-bonding area 201e, and the pad 50 is connected to the conductive portion 60 , So as to realize that the conductive part 30 communicates with the positive electrode and the negative electrode of the LED chip 30.

Fifth embodiment

As shown in FIG. 12, a fifth embodiment of the manufacturing method of the LED package device of the present invention also includes the following steps:

The substrate 10 is provided, and the substrate 10 includes the upper surface 103 and the lower surface 104. The substrate 10 can be made of materials commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.

The metal boss 20f (shown as one in FIG. 12) is formed on the upper surface 103 of the substrate 10.

The LED chip 30f is set on the metal boss 20f.

The similarities between this embodiment and the first to fourth embodiments will not be repeated here, and the differences are:

In this embodiment, the LED chip 30f is a vertical LED chip. When the metal boss 20f is formed, the die bonding region 201f and the isolation belt 203f form a mutually spaced structure. The recessed region 204 is defined, and the die-bonding region 201f and the isolation band 203 are spaced apart by the recessed region 204. In addition, the hollow pattern 2031f is formed in the isolation belt 203f, such as a plurality of rectangular hollow patterns 2031f as shown in FIG. 12. Of course, hollow patterns of other graphics (such as circles, diamonds, ellipses, etc.) can also be included.

As shown in FIG. 12, the die-bonding region 201f also includes the positive die-bonding region 2011f and the negative die-bonding region 2012f. The vertical LED chip 30f of this embodiment is disposed in the positive die-bonding region 2011f, and the positive electrode Part of the area on the 2011f side of the die bonding zone includes an extension. Preferably, the extension is from the side of the positive die bond zone 2011f to be less than 1/ of the width of the area of the die bond zone 201 provided for the LED chip 30f. For example, as shown in FIG. 12, it extends from the left side of the lower side of the positive die bonding region 2011f to a width less than 1/2 of the width of the region of the positive die bonding region 2011f provided for the LED chip 30f. The extension portion forms a positive electrode region 202f-P electrically connected to the anode of the LED chip 30. As shown in FIG. 12, the negative die-bonding region 2012f is formed on the same side as the positive electrode region 202f-P but spaced apart from the positive electrode region 202f-P, and the negative die-bonding region 2012f and the isolation band 203f are spaced apart from each other , Forming an independent structure. In this embodiment, a negative electrode bonding wire 206f is formed between the negative electrode surface of the LED chip 30f and the negative electrode bonding region 2012f to electrically conduct the two. At this time, the negative electrode bonding region 2012f is formed with the The negative electrode region 202f-N is electrically connected to the negative electrode of the LED chip 30f. The LED package device further includes the protection device package region 205f disposed on the metal boss 20f and formed between the positive electrode region 202f-P and the negative electrode region 202f-N.

As shown in FIG. 12, preferably, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N, and the space between the two does not exceed the width of the region where the positive electrode bonding region 2011f is provided with the LED chip.

As shown in FIG. 13, in a variation of this embodiment, when forming the metal boss 20g, the negative electrode region 202f-N shown in FIG. 12 is not formed separately, but on the LED chip 30f. A negative welding wire 206g is formed between the surface of the negative electrode and the isolation tape 203g to make the two electrically conductive. At this time, the isolation tape 203g serves as the negative electrode region 202g-N of the LED chip 30f at the same time, and this change does not contain the Negative electrode region 202f-N. In addition, the protective device packaging region 205g is formed between the positive electrode region 202g-P and the isolation band 203g. Therefore, the LED packaging device still includes the protective device packaging region 205g. Moreover, the hollow pattern 2031g is also formed in the isolation belt 203g, such as a rectangular hollow pattern 2031f as shown in FIG. 13. Of course, hollow patterns of other graphics (such as circles, diamonds, ellipses, etc.) can also be included.

With reference to FIG. 4, the packaging glue 40 is filled in the holes formed by the above-mentioned hollow pattern, thereby enhancing the buckle connection strength between the packaging glue 40 and the metal bosses 20f, 20g, thereby enhancing the packaging glue 40 and the metal bosses 20f and 20g. The bonding strength between the metal bosses 20f and 20g and the substrate 10.

Sixth embodiment

The similarities between this embodiment and the above-mentioned first to fifth embodiments will not be repeated here, and the differences are:

Referring to FIG. 2, FIG. 4, and FIG. 14, this embodiment further includes cutting the packaged device. After the packaging gel 40 is formed, the LED packaging device is cut along the middle position of the first gap 101 shown in FIG. 2 and along the cut extending from the upper surface 103 of the substrate to the lower surface 104 shown in FIG. 4 In direction F, the packaged device is cut with a single LED chip 30 and a single metal boss 20 as a unit, and divided into multiple light-emitting devices. Figure 14 shows a single light-emitting device, and the sixth implementation is completed. Example of manufacturing.

Since the buckle connection is formed between the encapsulant 40 and the metal boss 20, the buckle connection can produce a blocking effect during cutting, effectively reduce the amount of deformation at the bottom of the encapsulant 40, and ensure that it is close to the The encapsulant 40 in the die bonding area 201 of the metal boss 20 (as shown in FIG. 6) is tightly combined with the substrate 10 and will not be peeled from the substrate 10 due to cutting force.

Seventh embodiment

This embodiment provides an LED packaged device manufactured by the method for manufacturing an LED packaged device of the first embodiment. Referring again to FIGS. 4 and 5, the LED packaged device includes the substrate 10, the metal boss 20, The LED chip 30 and the packaging glue 40.

The substrate 10 includes the upper surface 103 and the lower surface 104. The substrate 10 can be made of materials commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.

The metal boss 20 is disposed on the upper surface 103 of the substrate 10. The metal boss 20 may be a metal plating layer formed on a ceramic substrate by sputtering technology combined with electroplating or electroless plating technology. The metal plating layer may be copper. Plating. As shown in FIG. 2, the first interval 101 is defined between adjacent metal bosses 20, that is, the metal bosses 20 are arranged at intervals of the first interval L1.

The LED chip 30 is disposed on the metal boss 20. In this embodiment, the LED chip 30 is a flip-chip LED chip.

Referring to FIG. 6, a schematic diagram of the structure of the circled part in FIG. 3 cut along the A-A direction is shown. The number of metal bosses 20 shown is one, and the number of LED chips 30 is also one. It can be seen from FIG. 6 that the metal boss 20 includes the die-bonding area 201 arranged in the middle part of the substrate 10 for the LED chip 30, and the die-bonding area 201 includes the positive electrode solid The crystal region 2011 and the negative electrode bonding region 2012 (the positions of the positive electrode bonding region 2011 and the negative electrode bonding region 2012 are not necessarily the same as shown in the figure on the right side is the positive electrode bonding region 2011, and the left side is the negative electrode bonding region 2012. The polarity of the region 201 is determined by the positive and negative poles of the LED chip 30 flip-chip mounted on it. This is only for the convenience of explaining the positions of the positive and negative die-bonding regions in the definition diagram). The LED chip 30 is In the flip-chip type, the positive electrode and the negative electrode are electrically connected to the positive electrode bonding region 2011 and the negative electrode bonding region 2012 respectively. As shown in FIG. 6, there is the second gap 102 between the positive electrode bonding region 2011 and the negative electrode bonding region 2012, that is, the second distance L2 is between the positive electrode bonding region 2011 and the negative electrode bonding region 2012 . The second distance L2 and the first distance L1 between the metal bosses 20 shown in FIG. 2 can be determined according to the actual size of the LED chip 30 and the size requirements of the packaged device to be formed.

Still referring to FIG. 6, the isolation band 203 is disposed on the edge portion of the substrate 10, and is in the shape of the edge portion of the metal boss 20, and the recess is defined between the isolation band 203 and the die bonding region 201 In the region 204, the depth of the recessed region 204 is less than the thickness of the isolation band 203 and the thickness of the die bonding region 201, and the thickness of the isolation band 203 and the die bonding region 201 are equal. Preferably, the depth/width ratio of the recessed area 204 is not less than 1/2, wherein the depth of the recessed area 204 is equal to the height of the metal boss 20.

As shown in FIG. 6, in this embodiment, the isolation belt 203 can be roughly divided into a two-part structure of the first part 2032 and the second part 2033 spaced apart from each other, both of which have a similar L-shaped structure. That is, the first part 2032 has the L-shaped structure, and the second part 2033 also has the L-shaped structure. In addition, the first portion 2032 of the isolation band 203 is integrally connected with the positive die bonding region 2011 to form a continuous structure, and the second portion 2033 of the isolation band 203 and the negative die bonding region 2012 form a continuous structure. Since the positive electrode bonding region 2011 and the negative electrode bonding region 2012 are respectively connected to the anode and the negative electrode of the LED chip 30, and the first part 2032 and the second part 2033 of the isolation band are respectively located in the positive electrode bonding region 2011 and The negative electrode bonding region 2012 is connected in the same body to form a continuous structure. Therefore, the isolation band 203 can be used as the electrode region 202 of the LED chip 30, more specifically, it is connected in the same body to the positive electrode bonding region 2011 to form a continuous isolation. The first part 2032 of the tape forms the positive electrode area of the LED chip 30, and the second part 2033, which is integrally connected with the negative die bonding area 2012 to form a continuous isolation tape, forms the negative electrode area of the LED chip 30.

In this embodiment, the metal boss 20 may first form the thin metal layer on the substrate 10 by ion sputtering technology, and then by electroplating or electroless plating technology.

Also referring to FIG. 6, in this embodiment, the electrostatic protection device (Zener) packaging area 205 is located on one side of the isolation belt 203 of the metal boss 20, and can be located in the protection device packaging area 205. The protection device is encapsulated in the middle to protect the entire LED package device. For example, the electrostatic device encapsulation area 205 may be arranged at a corner position of one side of the isolation belt 203.

Then, as shown in FIG. 4, the encapsulant 40 is covered on the LED chip 30, the metal boss 20 and the exposed substrate 10. In this embodiment, the encapsulant 40 is made of fluororesin material . Afterwards, heat the LED package that has covered the encapsulant 40, for example, solution baking or hot pressing can be used to make the encapsulant 40 fill the first gap 101 between the adjacent metal bosses 20 And the second gap 102 in the inner die bonding region 201 of the metal boss 20, the recess region 204 between the isolation band 202 and the die bonding region 201, and the first portion 2032 and the second portion of the isolation band 203 Gap between parts 2033 and so on. After the heating process, the packaging glue 40 forms good contact with the LED chip 30, the metal boss 20 and the substrate 10. Then, the encapsulation gel 40 is cooled, so that the encapsulation gel adheres to the LED chip 30, the metal boss 20, and the substrate 10, and the encapsulation gel 40 is filled with the metal boss The recessed area 203, gaps, etc. of 20 can form a snap connection with the metal boss 20. The snap connection can increase the adhesive force of the packaging glue 40 and effectively prevent the packaging glue 40 from being transported or transported. Problems such as the encapsulation gel 40 vibrating and falling off occur.

In addition, because the expansion coefficient of ceramics is 1.8*10 ^-5 /℃, the thermal expansion coefficient of fluororesin materials is generally 8-12*10 ^-5 /℃. In the above-mentioned large temperature change of heating and cooling, the snap connection between the encapsulation gel 40 and the metal boss 20 can effectively reduce the deformation of the encapsulation gel 40 outside the metal boss 20 Therefore, a gap between the packaging glue 40 and the substrate 10 is avoided.

In this embodiment, the metal bosses 20 have the same thickness, and the thickness of the metal bosses 20 is not less than 0.1 times the thickness of the packaging gel 40, and is not greater than the thickness of the packaging gel 40. The sum of the thickness of the boss 20 and the packaging glue 40 at the edge is not more than 0.1mm, the distance L3 between the edge of the metal boss 20 and the edge of the packaging glue 40 is not more than 0.1mm, and the metal boss 20 The width is not less than 1/3 of the thickness of the packaging gel 40, and the width of the metal boss 20 refers to the metal boss 20 measured perpendicular to the cutting direction (refer to the cutting direction F shown in FIG. 4) Measured width.

In another variation of this embodiment, as shown in FIG. 5, the substrate 10 of the LED package device further includes the board portion 105, the conductive portion 60, and the pad 50. The conductive portion 60 includes a positive electrode conductive portion and a negative electrode conductive portion corresponding to the positive electrode area and the negative electrode area, respectively. The conductive portion 60 includes a conductive hole penetrating through the plate body 105 and other similar structures.

The pad 50 includes a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion of the above-mentioned conductive portion 60. For example, in the structure shown in FIG. 6, the conductive portion 60 is connected to the positive and negative electrodes of the LED chip 30 by using the separation tape 203, and the pad 50 is also connected to the conductive portion 60, so that The bonding pad 50 is electrically connected to the anode and the cathode of the LED chip 30.

As described above, the bonding pad 50 is formed on the lower surface 104 of the board body portion 105 to facilitate the subsequent formation of the LED package device into a subsequent surface mount device. And using reflow soldering technology, the above-mentioned LED package device is soldered to the PCB (Printed Circuit Board) board. Due to the buckle connection formed between the packaging glue 40 and the metal boss 20, the packaging glue 40 is tightly bonded to the substrate 10, the metal boss 20 and the LED chip 30. Said, In the above-mentioned reflow soldering process, defects such as bubbles will not be generated, so the yield of later products can be improved accordingly.

Eighth embodiment

This embodiment provides an LED package device manufactured as in the second embodiment. The similarities with the seventh embodiment will not be repeated here. The difference is:

In this embodiment, the isolation belt 203a of the metal boss 20a has various pattern structures. As shown in FIG. 7, the isolation belt 203 a includes the pattern structure, and each pattern structure includes the belt structure and the zigzag pattern 2031 a. The zigzag pattern 2031a includes zigzags extending inwardly from the belt-like structure, or zigzags extending outwardly from the belt-like structure. It should be noted that the isolation belt may also be one of the pattern structures including the zigzag pattern 2031a.

With reference to FIG. 4, after the zigzag pattern 2031a is formed, the packaging glue 40 is filled in the gap defined by the zigzag pattern 2031a, thereby enhancing the card between the packaging glue 40 and the metal boss 20a The buckle connection strength enhances the bonding strength between the packaging glue 40 and the metal boss 20a and the substrate 10.

In a variation of this embodiment, as shown in FIG. 8, each pattern structure of the isolation belt 203 b includes the belt-shaped structure and the hollow pattern 2031 b formed on the belt-shaped structure. The hollow pattern 2031b may be a hollow pattern formed by a plurality of spaced rectangles, or a plurality of spaced diamonds, a plurality of spaced ellipses, a plurality of spaced circles, and other hollow patterns.

In this embodiment, as shown in FIG. 9, in order to prevent the area occupied by the L-shaped structure of the isolation belt 203c of the metal boss 20c from being too large, the hollow pattern is also included on one side of the L-shaped structure, For example, it includes a circular and/or rectangular hollow pattern 2031c.

With reference to FIG. 4, after the above-mentioned hollow pattern is formed, the encapsulant 40 is filled in the hole formed by the hollow pattern, thereby enhancing the buckle connection strength between the encapsulating compound 40 and the metal boss 20b, thereby enhancing the The bonding strength between the encapsulant 40 and the metal boss 20b and the substrate 10.

Ninth embodiment

This embodiment provides an LED package device manufactured as in the third embodiment. As shown in FIG. 10, in this embodiment, the die bonding area 201d of the metal boss 20d and the isolation band 203d are also connected in the same body and include a continuous structure, and there is no recessed area between the two. The die-bonding region 201d and the isolation band 203d respectively form two parts spaced apart from each other as a whole. The part of the isolation band 203d connected in the same body as the region 2011d and continuous can be used as the positive electrode region of the LED chip 30, and the part of the isolation band 203d connected in the body and continuous with the negative die bonding region 2012d can be used as the LED chip 30 The negative electrode area.

In this embodiment, a hollow pattern is also formed in the isolation belt 203d of the metal boss 20d, such as a rectangular hollow pattern 2031d shown in FIG. 10. Of course, it may also include hollow patterns in other shapes such as diamonds, circles, ellipses, and the like.

4, the packaging glue 40 is filled in the hole formed by the hollow pattern 2031d, thereby enhancing the buckle connection strength between the packaging glue 40 and the metal boss 20d, and enhancing the packaging glue 40, The bonding strength between the metal boss 20d and the substrate 10.

Tenth embodiment

This embodiment provides an LED package device manufactured as in the fourth embodiment. The similarities between this embodiment and the seventh embodiment will not be repeated here, and the differences are:

As shown in FIG. 11, the metal boss 20e also includes the die bonding region 201e and the isolation band 203e. In this embodiment, the isolation band 203e has a closed surrounding structure and is mutually connected to the die bonding region 201e. Space, the recessed region 204 is used to isolate the isolation band 203e and the die bonding region 201e. The isolation belt 203e may include the pattern structure, for example, the rectangular hollow pattern 2031e shown in FIG. 11, and of course may also include other shapes (such as diamond, oval, circle, etc.) hollow patterns. And it may also include a zigzag pattern similar to that shown in FIG. 7 and the like.

In this embodiment, since the die bonding region 201e and the isolation band 203e are separated from each other, they are not connected and discontinuous in structure, so they cannot form an electrically conductive structure. Therefore, in this embodiment, The positive electrode bonding area 2011e connected to the positive electrode of the LED chip 30 (as shown in FIG. 4) forms the positive electrode area of the LED chip 30, and the negative electrode bonding area 2012e connected to the negative electrode of the LED chip 30 forms the LED The negative electrode area of the wafer 30.

Referring to FIG. 5 again, in this embodiment, the conductive portion 60 communicates with the anode and the negative electrode of the LED chip 30 through the die-bonding area 201e, and the pad 50 communicates with the conductive portion 60, thereby The conductive part 30 is connected with the anode and the cathode of the LED chip 30.

Eleventh embodiment

This embodiment provides an LED package device manufactured as in the fifth embodiment.

As shown in FIG. 12, the substrate 10 can be made of materials commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.

The metal boss 20f is formed on the upper surface 103 of the substrate 10.

The LED chips 30f are respectively arranged on the metal bosses 20f.

The similarities between this embodiment and the seventh embodiment to the tenth embodiment described above will not be repeated here. The differences are:

In this embodiment, the LED chip 30f is a vertical LED chip, the die bonding area 201f of the metal boss 20f and the isolation belt 203f form a mutually spaced structure, and the recessed area 204 is defined between the two, and The recessed region 204 is used to separate the die bonding region 201f and the isolation band 203 from each other. In addition, the isolation belt 203f includes the hollow pattern 2031f, such as a plurality of rectangular hollow patterns 2031f as shown in FIG. 12. Of course, hollow patterns of other graphics (such as circles, diamonds, ellipses, etc.) can also be included.

As shown in FIG. 12, the die-bonding region 201f also includes the positive die-bonding region 2011f and the negative die-bonding region 2012f. The vertical LED chip 30f of this embodiment is disposed in the positive die-bonding region 2011f, and the positive electrode A part of the region on one side of the die bonding area 2011f includes an extension. Preferably, the extension portion is from one side of the positive die die region 2011f to be smaller than the width of the region of the die die region 201 provided for the LED chip 30f. Extend the width of 1/2, for example, as shown in FIG. 12, from the left side of the bottom side of the positive electrode die-bonding region 2011f to a width of 1/2 that is less than the width of the region of the positive electrode die-bonding region 2011f provided for the LED chip 30f. Down extension. The extension portion forms a positive electrode region 202f-P electrically connected to the anode of the LED chip 30. As shown in FIG. 12, the negative die-bonding region 2012f is formed on the same side as the positive electrode region 202f-P but spaced apart from the positive electrode region 202f-P, and the negative die-bonding region 2012f and the isolation band 203f are spaced apart from each other , Forming an independent structure. The negative electrode bonding wire 206f is formed between the negative electrode surface of the LED chip 30f and the negative electrode bonding region 2012f to electrically conduct the two. At this time, the negative electrode bonding region 2012f is electrically connected to the negative electrode of the LED chip 30f The negative electrode region 202f-N. The LED package device further includes the protection device package region 205f disposed on the metal boss 20f and formed between the positive electrode region 202f-P and the negative electrode region 202f-N.

As shown in FIG. 12, preferably, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N, and the space between the two does not exceed the width of the region where the positive electrode bonding region 2011f is provided with the LED chip.

As shown in FIG. 13, in a variation of this embodiment, when forming the metal boss 20g, the negative electrode region 202f-N shown in FIG. 12 is not separately formed, but on the negative electrode surface of the LED chip 30f. A negative welding wire 206g is formed between the isolation band 203g and the isolation band 203g. At this time, the isolation band 203g serves as the negative electrode region 202g-N of the LED chip 30f at the same time, and the negative electrode is not included in this variation. District 202f-N. In addition, the protective device packaging region 205g is formed between the positive electrode region 202g-P and the isolation band 203g. Therefore, the LED packaging device still includes the protective device packaging region 205g. Moreover, the hollow pattern 2031g is also formed in the isolation belt 203g, such as a rectangular hollow pattern 2031f as shown in FIG. 13. Of course, hollow patterns of other graphics (such as circles, diamonds, ellipses, etc.) can also be included.

With reference to FIG. 4, the packaging glue 40 is filled in the holes formed by the above-mentioned hollow pattern, thereby enhancing the buckle connection strength between the packaging glue 40 and the metal bosses 20f, 20g, thereby enhancing the packaging glue 40, The bonding strength between the metal bosses 20f and 20g and the substrate 10.

Twelfth embodiment

This embodiment provides a luminous body device manufactured as in the fifth embodiment. The similarities with the above-mentioned eleventh embodiment will not be repeated here, the difference is:

Referring to FIGS. 2, 4, and 14, the single light-emitting body device of this embodiment includes the LED package device being cut along the middle position of the first interval 101 shown in FIG. 2 and along the cutting direction F shown in FIG. 4 Single luminous body device. Since a snap connection is formed between the encapsulant 40 and the metal boss 20, the luminous device is less likely to fall off or peel off the encapsulant 40 during use.

As mentioned above, the LED package device and the manufacturing method thereof of the present invention include at least the following beneficial effects:

1. The present invention utilizes a pattern formed in the metal boss 20. The encapsulant 40 not only covers the LED chip 30, the metal boss 20 and the substrate 10, but also fills the space between the metal bosses 20. The first gap between, and the hole 2001 formed by the pattern structure 200 in the metal boss 20, thereby forming a snap connection between the encapsulant 40 and the metal boss 20, thereby increasing the adhesion of the encapsulant 40 It can effectively prevent the packaging plastic body 40 from shaking and falling off during transportation or transmission.

2. Due to the close bonding between the encapsulant 40 and the LED chip 30, the metal boss 20 and the substrate 10, it can effectively avoid the use of reflow soldering technology to form the pads on the lower surface 104 of the substrate 10 At 50 o'clock, defects such as reflow soldering bubbles appear, so as to ensure the yield of subsequent products.

3. During cutting, the above-mentioned snap connection between the encapsulant 40 and the metal boss 20 can produce a blocking effect, effectively reduce the amount of deformation at the bottom of the encapsulant, and ensure the die bonding area close to the metal boss 20 The encapsulant 40 of 201 is tightly combined with the substrate 10 and will not peel off from the substrate 10 due to cutting force.

4. When the packaging gel 40 undergoes a large temperature change, although the ceramic substrate 20 used in the present invention and the packaging gel 40 made of a fluororesin material have a large difference in thermal expansion coefficient, the packaging gel 40 A snap connection can be formed between 40 and the metal boss 20, which can effectively reduce the deformation of the packaging glue 40 outside the metal boss 20, thereby avoiding the occurrence between the packaging glue 40 and the substrate 10. Gap.

5. In addition, the preparation method of the LED package device of the present invention has a relatively simple process and a good packaging effect, which is beneficial to reduce packaging costs and increase economic benefits.

However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.

10: substrate 101: first interval 102: second interval 103: upper surface 104: lower surface 105: Board body 20: Metal boss 200: pattern structure 2001: Porosity 201: Die Bonding Area 2011: Positive crystal bonding area 2012: Anode die-bonding area 202: Electrode area 203: Isolation Belt 2032: Part One 2033: Part Two 204: sunken area 205: Protection device packaging area 206: Metal connection area 207: Outer peripheral surface 208: inside 20a: Metal boss 203a: Barrier 2031a: zigzag pattern 2032a: Ribbon structure 20b: Metal boss 203b: Isolation belt 2031b: hollow pattern 20c: Metal boss 203c: Isolation belt 2031c: hollow pattern 20d: Metal boss 201d: die bonding area 2011d: Positive crystal bonding area 2012d: Negative die bonding area 203d: isolation belt 2031d: hollow pattern 20e: Metal boss 201e: die bonding area 2011e: Positive crystal bonding area 2012e: Negative die bonding area 203e: isolation belt 2031e: hollow pattern 20f: Metal boss 201f: die bonding area 202f-P: positive electrode area 202f-N: negative electrode area 203f: isolation belt 2031f: hollow pattern 205f: Protection device packaging area 20g: metal boss 201g: die bonding area 202g-P: positive electrode area 202g-N: negative electrode area 203g: isolation belt 2031g: hollow pattern 205g: protection device packaging area 30: LED chip 30f: LED chip 40: Encapsulation colloid 50: pad 60: Conductive part F: Cutting direction L1: first pitch L2: second spacing Ls: outer circumference length Li: Total inner length Lc: width Lm: width

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 shows a schematic flow chart of a first embodiment of the manufacturing method of the LED package device of the present invention; 2 is a schematic diagram showing the structure of forming a plurality of metal bosses on a substrate in the method shown in FIG. 1; FIG. 3 is a schematic diagram of a structure in which a plurality of LED chips are respectively arranged on the metal boss in the method shown in FIG. 1; FIG. 4 is a schematic view showing the structure of covering the LED chip, the metal boss and the substrate with a packaging glue in the method shown in FIG. 1; FIG. 5 is a schematic diagram showing the structure of forming a plurality of pads on the lower surface of the substrate; Fig. 6 is a schematic structural view of the circled part of Fig. 3 cut along the A-A direction; 7 and 8 are schematic diagrams of metal bosses in a second embodiment and an eighth embodiment of the present invention, respectively; 9 is a schematic diagram of another modified aspect of the metal boss of the second embodiment and the eighth embodiment; 10 is a schematic diagram of a metal boss in a third embodiment and a ninth embodiment of the present invention; 11 is a schematic diagram of the structure of a metal boss in a fourth embodiment and a tenth embodiment of the present invention; 12 is a schematic diagram of a vertical LED chip disposed on the metal boss in a fifth embodiment and an eleventh embodiment of the present invention; FIG. 13 is a schematic diagram of a modification of the fifth embodiment and the eleventh embodiment eleven; and 14 is a schematic cross-sectional view of a single light-emitting device of a sixth embodiment and a twelfth embodiment of the present invention.

Claims (39)

A light emitting diode (light emitting diode, LED for short) packaging device includes: a substrate including an upper surface and a lower surface that are inverted; at least one metal boss arranged on the upper surface of the substrate; at least one LED chip arranged on On the at least one metal boss; and a packaging glue covering the at least one LED chip, the at least one metal boss and the substrate; wherein, the at least one metal boss includes a die-bonding region and an isolation band and has A pattern structure, the encapsulation gel and the at least one metal boss having the pattern structure form a snap connection. The LED package device according to claim 1, wherein the at least one metal boss includes a metal plating layer formed on the substrate. The LED packaging device according to claim 1, wherein the thickness of the at least one metal boss is not less than 0.1 times the thickness of the packaging glue, and is less than the thickness of the packaging glue. The LED package device according to claim 1, wherein the distance between the edge of the at least one metal boss and the edge of the package body is not greater than 0.1 mm. The LED package device according to claim 1, wherein the width of the at least one metal boss is not less than 1/3 of the thickness of the encapsulant, and the width of the at least one metal boss is along a vertical direction from the substrate The cutting direction of the lower surface extending to the upper surface is measured. The LED package device according to claim 1, wherein the die bonding area of the at least one metal boss is disposed in the middle part of the substrate, and the solid The crystal region includes a positive electrode bonding region and a negative electrode bonding region which are arranged oppositely and separated from each other by a second interval, wherein the at least one LED chip has an anode and a negative electrode, and the positive electrode bonding region is connected to the at least one The positive electrode of the LED chip, and the negative electrode bonding area is connected to the negative electrode of the at least one LED chip. The LED package device according to claim 1, wherein the isolation tape of the at least one metal boss is disposed on an edge portion of the substrate, and the isolation tape has the pattern structure. The LED package device according to claim 1, wherein the thickness of the die bonding area and the isolation band of the at least one metal boss are the same. The LED package device according to claim 1, wherein the isolation band of the at least one metal boss has a closed surrounding structure and is spaced apart from the die bonding area. The LED package device according to claim 1, wherein the isolation band of the at least one metal boss forms a first part and a second part that are separated from each other, and each of the first part and the second part includes an L-shaped structure. The LED package device according to claim 1, wherein the metal boss further has a metal connection area connected between the isolation band and the die-bonding region, and a width of the metal connection area is smaller than that of the 1/2 of the width of the die bonding zone. The LED package device according to claim 7, wherein the pattern structure of the isolation band of the at least one metal boss includes a strip structure, and a zigzag pattern or a hollow pattern, wherein the The zigzag pattern includes a plurality of zigzags extending inward from the belt-like structure or zigzags extending outward from the belt-like structure. The LED package device according to claim 12, wherein the pattern structure of the at least one metal boss has a plurality of pores, and the encapsulant is filled in the at least one metal boss by solution baking or hot pressing. The hole formed by the pattern structure of the metal boss forms the snap connection. The LED package device according to claim 1, further comprising a protection device package area located at one side of the isolation band of the at least one metal boss. The LED package device according to claim 1, wherein a recessed area is defined between the isolation band of the at least one metal boss and the die bonding area. The LED package device according to claim 15, wherein the ratio of the depth to the width of the recessed area is not less than 1/2. The LED package device according to claim 15, wherein the depth of the recessed region is at least less than at least one of the thickness of the isolation tape and the thickness of the die bonding region. The LED package device according to claim 1, wherein the at least one LED chip has a positive electrode and a negative electrode, and the substrate includes: a board portion having the upper surface and the lower surface; and a board located on the board body The conductive portion in the upper surface and the lower surface of the board body portion, and the conductive portion includes a positive electrode conductive portion and a negative electrode conductive portion respectively connected to the positive electrode and the negative electrode of the at least one LED chip; and a conductive portion located at The pads on the lower surface of the board body portion, the pads include a positive electrode pad and a negative electrode pad that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion. The LED package device according to claim 1, wherein the LED package device includes a plurality of the metal bosses spaced apart, and a plurality of the LED chips respectively disposed on the metal bosses, any two adjacent to each other Metal boss room A first interval is defined, and the first interval is used for cutting along its middle position to separate a plurality of single light-emitting devices. The LED package device according to claim 1, wherein the thickness of the substrate is greater than 35 micrometers. The LED package device according to claim 1, wherein the substrate has an outer circumferential length, the metal boss has an outer circumferential surface, and an inner side surface located in the outer circumferential surface and surrounded by the outer circumferential surface , The inner side has a total inner length, and the total inner length is greater than the outer circumferential length. A method for manufacturing an LED package device, including: (a) providing a substrate, the substrate having an upper surface and a lower surface; (b) forming at least one metal boss on the upper surface of the substrate; (c) Disposing at least one LED chip on the at least one metal boss; and (d) covering the at least one LED chip, the at least one metal boss, and the substrate with an encapsulant, wherein the at least one metal boss It includes a die-bonding region and an isolation band and has a pattern structure, and the packaging glue forms a snap connection with the pattern structure of the at least one metal boss. The method for manufacturing an LED package device according to claim 22, wherein the step (b) of the at least one metal boss includes the following sub-steps: making a pattern structure corresponding to the pattern structure corresponding to the at least one metal boss The mask plate is attached to the upper surface of the substrate; the upper surface of the substrate to which the mask plate is attached is plated with a metal layer Processing to form a metal film with the pattern structure on the upper surface of the substrate; and continue to plate a metal layer on the metal film to thicken the metal film until the at least one metal boss is formed. The method for manufacturing an LED packaging device according to claim 22, wherein the thickness of the at least one metal boss is not less than 0.1 times the thickness of the packaging glue, and is less than the thickness of the packaging glue. The method for manufacturing an LED packaged device according to claim 22, wherein the distance between the edge of the at least one metal boss and the edge of the package body is not greater than 0.1 mm. The method for manufacturing an LED package device according to claim 22, wherein the width of the at least one metal boss is not less than 1/3 of the thickness of the packaging gel, and the width of the at least one metal boss is perpendicular to a The cutting direction of the lower surface of the substrate extending to the upper surface is measured. The method for manufacturing an LED packaged device according to claim 22, wherein the die bonding area of the at least one metal boss is disposed in a middle portion of the substrate, and the die bonding area includes oppositely disposed and spaced at a second interval. A positive electrode bonding area and a negative electrode bonding area are separated from each other, the at least one LED chip has an anode and a negative electrode, the positive electrode bonding area is connected to the anode of the at least one LED chip, and the negative electrode bonding area is connected The negative electrode of the at least one LED chip. The method for manufacturing an LED packaged device according to claim 22, wherein the isolation band of the at least one metal boss is disposed on an edge portion of the substrate, and the pattern structure is formed in the isolation band. The method of manufacturing an LED package device according to claim 22, wherein: The thickness of the die bonding region and the isolation band of the at least one metal boss are the same. The method for manufacturing an LED package device according to claim 22, wherein the isolation band of the at least one metal boss has a closed surrounding structure and is spaced apart from the die bonding area. The method for manufacturing an LED packaged device according to claim 22, wherein the spacer strip of the at least one metal boss forms a first part and a second part that are separated from each other, and each of the first part and the second part includes an L-shaped structure. The method for manufacturing an LED package device according to claim 28, wherein the pattern structure of the isolation band of the at least one metal boss includes a strip structure, and a zigzag pattern or a hollow pattern, wherein, The zigzag pattern includes a plurality of zigzags extending inward from the belt-like structure or zigzags extending outward from the belt-like structure. The method for manufacturing an LED package device according to claim 32, wherein the pattern structure of the at least one metal boss has a plurality of pores, and the encapsulant is covered on the at least one LED chip and the at least one metal boss And the step on the substrate further includes performing solution baking or hot pressing on the packaging glue, and the packaging glue fills the pores of the pattern structure of the at least one metal boss to form the snap connection. The method for manufacturing an LED package device according to claim 22, further comprising forming an electrostatic protection device package area located on one side of the isolation band. The method of manufacturing an LED package device according to claim 22, wherein: A recessed area is defined between the die bonding area and the isolation band. The method for manufacturing an LED package device according to claim 35, wherein the ratio of the depth to the width of the recessed area is not less than 1/2. The method for manufacturing an LED package device according to claim 35, wherein the depth of the recessed region is at least less than at least one of the thickness of the isolation band and the thickness of the die bonding region. The method for manufacturing an LED package device according to claim 22, further comprising the steps of: forming a conductive portion penetrating through the board portion on a board portion, and the conductive portion includes a positive electrode connected to the at least one LED chip. A positive electrode conductive portion and a negative electrode conductive portion that are connected to a negative electrode; and a pad is formed on the lower surface of the plate body portion, and the pad includes conductive portions that are respectively connected to the positive electrode conductive portion and the negative electrode conductive portion. A positive electrode pad and a negative electrode pad. The method for manufacturing an LED package device according to claim 22, wherein the step (b) is to provide a plurality of spaced apart metal bosses on the substrate, and a first metal boss is defined between any two adjacent metal bosses. In this step (c), a plurality of the LED chips are respectively arranged on the metal boss, and the manufacturing method further includes: cutting along the middle position of the first interval to separate a plurality of light-emitting chips. Devices, each light-emitting device includes respective said metal bosses and respective said LED chips.

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