TW202032819A - LED packaging device and manufacturing method thereof - Google Patents
LED packaging device and manufacturing method thereof Download PDFInfo
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- TW202032819A TW202032819A TW109102220A TW109102220A TW202032819A TW 202032819 A TW202032819 A TW 202032819A TW 109102220 A TW109102220 A TW 109102220A TW 109102220 A TW109102220 A TW 109102220A TW 202032819 A TW202032819 A TW 202032819A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
Description
本發明是有關於一種封裝器件,特別是LED封裝器件及LED封裝器件的製造方法。The present invention relates to a packaged device, particularly an LED packaged device and a manufacturing method of the LED packaged device.
隨著技術的提升,及深紫外LED燈的成本降低和效率提升,深紫外LED運用越來越廣泛。特別是傳統汞燈退出市場的期限越來越近,深紫外LED燈需求處於爆發前夕。With the improvement of technology, the cost reduction and efficiency improvement of deep ultraviolet LED lamps, deep ultraviolet LEDs are more and more widely used. In particular, the time limit for the withdrawal of traditional mercury lamps from the market is getting closer, and the demand for deep ultraviolet LED lamps is on the eve of the outbreak.
現有的深紫外LED封裝元件,主要是陶瓷封裝杯和石英玻璃。但陶瓷封裝杯與石英玻璃存在著體積過大,價格昂貴的缺點,又因為光先從藍寶石到空氣,再到石英玻璃,所以導致封裝體的出光效率低下。The existing deep ultraviolet LED packaging components are mainly ceramic packaging cups and quartz glass. However, the ceramic package cup and the quartz glass have the disadvantages of being too large and expensive. Because the light first goes from sapphire to air and then to the quartz glass, the light extraction efficiency of the package body is low.
另外還有一些深紫外LED封裝元件,是用平面陶瓷基板,配合模制矽膠的封裝形式進行封裝。這種封裝形式的主要缺點是深紫外光(290nm以下)對矽膠具有很強的破壞性,矽膠被深紫外光長時間照射容易膠裂,而且矽膠對深紫外光透射率相對來說比較低。另一種常用的封裝膠體為含氟材料,但是含氟材料因為黏附性低的問題,特別難加工,並且在切割時,容易出現切割脫落,震動脫落,回流焊氣泡等問題。In addition, there are some deep-ultraviolet LED package components that are packaged with a flat ceramic substrate and a molded silicone package. The main disadvantage of this type of package is that deep ultraviolet light (below 290nm) is very destructive to silicone. Silicone is prone to cracking when exposed to deep ultraviolet light for a long time, and the transmittance of silicone to deep ultraviolet light is relatively low. Another commonly used encapsulant is a fluorine-containing material, but the fluorine-containing material is particularly difficult to process due to the problem of low adhesion, and it is prone to cutting off, vibration off, and reflow bubbles during cutting.
因此,本發明之一目的,即在提供一種至少能夠克服先前技術的缺點的發光二極管(light emitting diode,簡稱LED)封裝器件。Therefore, one objective of the present invention is to provide a light emitting diode (LED) package device that can at least overcome the disadvantages of the prior art.
該LED封裝器件包括一基板、至少一金屬凸台、至少一LED晶片,及一封裝膠體。The LED packaging device includes a substrate, at least one metal boss, at least one LED chip, and a packaging glue.
該基板,包括反向的一上表面及一下表面。The substrate includes an opposite upper surface and a lower surface.
該至少一金屬凸台設置在所述基板的上表面。The at least one metal boss is arranged on the upper surface of the substrate.
該至少一LED晶片設置在所述金屬凸臺上。The at least one LED chip is arranged on the metal boss.
該封裝膠體覆蓋該至少一LED晶片、該至少一金屬凸台及所述基板。The packaging glue covers the at least one LED chip, the at least one metal boss and the substrate.
其中,該至少一金屬凸台具有一圖案結構,所述封裝膠體與具有所述圖案結構的該至少一金屬凸台形成一卡扣連接。Wherein, the at least one metal boss has a pattern structure, and the packaging glue forms a snap connection with the at least one metal boss having the pattern structure.
因此,本發明之另一目的,即在提供一種至少能夠克服先前技術的缺點的LED封裝器件的製造方法。Therefore, another object of the present invention is to provide a method for manufacturing an LED package device that can at least overcome the disadvantages of the prior art.
於是,本發明LED封裝器件的製造方法,包含(a)提供一基板,所述基板具有一上表面及一下表面;(b)在所述基板的上表面形成至少一個金屬凸台;(c)將至少一LED晶片設置在所述金屬凸臺上;(d)將封裝膠體覆蓋在該至少一LED晶片、該至少一金屬凸台及所述基板上,其中,該至少一金屬凸台具有一圖案結構,所述封裝膠體與具有所述圖案結構的該至少一金屬凸台形成卡扣連接。Therefore, the manufacturing method of the LED package device of the present invention includes (a) providing a substrate having an upper surface and a lower surface; (b) forming at least one metal boss on the upper surface of the substrate; (c) Disposing at least one LED chip on the metal boss; (d) covering the at least one LED chip, the at least one metal boss and the substrate with an encapsulant, wherein the at least one metal boss has a With a pattern structure, the encapsulation gel and the at least one metal boss having the pattern structure form a snap connection.
本發明之功效在於:本發明的方法在該至少一金屬凸台中形成圖案,該封裝膠體不僅覆蓋該至少一LED晶片、該至少一金屬凸台和該基板,同時還填充該至少一金屬凸台之間的間隙以及該至少一金屬凸台中的圖案形成的孔隙,由此,該封裝膠體和該至少一金屬凸台之間形成卡扣連接。增加了該封裝膠體的黏附力,有效防止封裝體在運輸或傳送過程中出現該封裝膠體震動脫落等問題。由於該封裝膠體和該至少一LED晶片、所述金屬凸台及該基板間的緊密黏結,有效避免例如利用回流焊技術在該基板的下表面形成焊盤時,出現回流焊氣泡等缺陷,從而保證後續產品的良率。在切割時,該封裝膠體和該至少一金屬凸台之間的上述卡扣連接能夠起到阻擋的作用,有效減少該封裝膠體底部的形變量,保證靠近該至少一金屬凸台的固晶區的封裝膠體和該基板緊密結合,不會因為切割受力而從該基板剝離。在該封裝膠體經歷較大的溫度變化時,儘管本發明中採用的陶瓷制的基板和氟樹脂材料制的封裝膠體的熱膨脹係數相差較大,但是由於該封裝膠體和該至少一金屬凸台之間能夠形成卡扣連接,因此能夠有效減少該至少一金屬凸台外的該封裝膠體的形變,從而避免該封裝膠體和該基板之間出現縫隙。另外,本發明所述的LED封裝器件的製備方法過程比較簡單,封裝效果好,有利於降低封裝成本、增加經濟效益。The effect of the present invention is that the method of the present invention forms a pattern in the at least one metal boss, and the encapsulant not only covers the at least one LED chip, the at least one metal boss and the substrate, but also fills the at least one metal boss The gap between and the hole formed by the pattern in the at least one metal boss, thereby forming a snap connection between the packaging glue and the at least one metal boss. The adhesive force of the encapsulation body is increased, and the problems of the encapsulation body such as vibration and fall off during the transportation or transmission of the encapsulation body are effectively prevented. Due to the close bonding between the encapsulant and the at least one LED chip, the metal boss and the substrate, defects such as reflow bubbles when forming pads on the lower surface of the substrate by reflow soldering technology are effectively avoided, thereby Ensure the yield of subsequent products. During cutting, the above-mentioned snap connection between the encapsulation gel and the at least one metal boss can act as a barrier, effectively reducing the amount of deformation at the bottom of the encapsulation gel, and ensuring that the die bonding area close to the at least one metal boss The packaging glue is tightly combined with the substrate and will not peel off from the substrate due to cutting force. When the packaging colloid undergoes a large temperature change, although the thermal expansion coefficients of the ceramic substrate and the packaging colloid made of fluororesin materials used in the present invention differ greatly, the difference between the packaging colloid and the at least one metal boss A snap connection can be formed therebetween, so that the deformation of the packaging glue outside the at least one metal boss can be effectively reduced, thereby avoiding a gap between the packaging glue and the substrate. In addition, the preparation method of the LED package device of the present invention has a relatively simple process and a good packaging effect, which is beneficial to reducing packaging costs and increasing economic benefits.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.
無機氟樹脂材料的折射率n約為1.34,紫外光透射率高,可靠性好,因此該氟樹脂材料是非常好的深紫外LED封裝材料。但是,含氟材料因為粘附性問題,特別難加工,容易出現切割脫落,震動脫落,回流焊氣泡等問題。The refractive index n of the inorganic fluororesin material is about 1.34, the ultraviolet light transmittance is high, and the reliability is good. Therefore, the fluororesin material is a very good deep ultraviolet LED packaging material. However, fluorine-containing materials are particularly difficult to process due to adhesion problems, and are prone to cut off, vibration, and reflow bubbles.
第一實施例First embodiment
本發明LED封裝器件的製造方法的一第一實施例,如圖1-4所示,該第一實施例包括如下步驟:A first embodiment of the manufacturing method of the LED package device of the present invention, as shown in Figs. 1-4, the first embodiment includes the following steps:
提供一基板10,該基板10包括反向的一上表面103,及一下表面104,所述基板10可以選擇本領域常用的材料製成,例如陶瓷或矽,優選地為陶瓷基板。A
如圖2所示,在該基板10的上表面103形成多個金屬凸台20,如圖2所示,相鄰二金屬凸台20之間具有一第一間隔101,即所述金屬凸台20以第一間距L1間隔排列。As shown in FIG. 2, a plurality of
接下來,如圖3所示,將多個LED晶片30分別設置在金屬凸台20上,本實施例中,每一LED晶片是一倒裝LED晶片。需說明的是,所述金屬凸台20的數量不限於多個,在本實施例的其他變化態樣中,也可為一個;且所述LED晶片30的數量也可對應所述金屬凸台20的數量而為一個。Next, as shown in FIG. 3, a plurality of
參照附圖6,示出了圖3中圓圈部分的結構沿A-A方向剖切的示意圖。由圖6顯示出的所述金屬凸台20與所述LED晶片30為一個,所述金屬凸台20包括一固晶區201,及一隔離帶203;且所述金屬凸台20包括一具有多個孔隙2001的圖案結構200。所述固晶區201設置於該基板的中間部分,使得所述金屬凸台20包括中間部分之用於設置對應的所述倒裝LED晶片30的固晶區201,所述固晶區201包括相對設置的一正極固晶區2011和一負極固晶區2012(該正極固晶區2011和該負極固晶區2012的位置不一定是圖中所示右側為該正極固晶區2011、左側為該負極固晶區2012,該固晶區201的極性是由倒裝設置在其上的LED晶片30的正負極決定,此處僅為了便於說明定義圖中的正極固晶區和負極固晶區的位置),所述LED晶片30是倒裝型LED晶片,包括一正極(圖未示出)及一負極(圖未示出),該正極與該負極分別與該正極固晶區2011和該負極固晶區2012連接。如圖6所示,該正極固晶區2011和該負極固晶區2012之間界定有一第二間隔102,即正極固晶區2011和負極固晶區2012之間界定有一第二間距為L2。該第二間距L2以及圖2所示的所述金屬凸台20之間的第一間距L1可以根據LED晶片的實際大小以及所要形成的封裝器件的尺寸要求來確定。此外,具體而言,該金屬凸台20還具有一連接於所述隔離帶203與所述固晶區201之間的金屬連接區域206。所述金屬連接區域206的一寬度Lc小於所述固晶區201的一寬度Lm的1/2。Referring to Fig. 6, a schematic view of the structure of the circled part in Fig. 3 cut along the A-A direction is shown. 6 shows that the
仍然參照圖6,該隔離帶203設置於該基板10的邊緣部分,使得所述金屬凸台20的邊緣部分形成有該隔離帶203,該隔離帶203與該固晶區201之間界定有一凹陷區204,該凹陷區的深度至少小於該隔離帶203的厚度及該固晶區201的厚度的其中一者,又,該隔離帶203與該固晶區201的厚度相等。優選地,所述凹陷區204的深度/寬度的比例不小於1/2,其中,所述凹陷區204的深度等於所述金屬凸台的高度。較佳地,所述金屬凸台20的厚度為35微米以上,更佳地,所述金屬凸台20的厚度為45微米以上,例如:所述金屬凸台20的厚度為60微米。另一方面,所述基板10具有一外周長度Ls,所述金屬凸台20具有一外周面207,及一位於所述外周面208內並受所述外周面207所圍繞的內側面208。所述內側面208具有一以平行於所述基板10的上表面103的延伸方向所量測的內側總長度Li(也就是不計入所述外周面207的外周長),所述金屬凸台20的內側面208的內側總長度Li大於所述基板10的外周長度Ls。Still referring to FIG. 6, the
如圖6所示,在本實施例中,所述隔離帶203大體上可以區分成相互間隔的一第一部分2032,及一第二部分2033之兩部分結構,這兩部分結構均具有類似L型的結構,也就是該第一部分2031具有一L型結構,該第二部分2033也具有一L型結構。並且,該隔離帶203的第一部分2032與該正極固晶區2011一體連接而形成一連續結構,該隔離帶203的第二部分2033與該負極固晶區2012形成連續結構。由於該正極固晶區2011與該負極固晶區2012分別與所述LED晶片30的正極和負極連通,而所述隔離帶的第一部分2032與第二部分2033分別於該正極固晶區2011和該負極固晶區2012同體連接而形成連續的結構,因此,該隔離帶203可以作為LED晶片30的電極區202,更具體地,與該正極固晶區2011同體連接而呈連續的隔離帶的該第一部分2032形成LED晶片30的正電極區,與該負極固晶區2012同體連接形成而呈連續的隔離帶的第二部分形成該LED晶片30的負電極區。As shown in FIG. 6, in this embodiment, the
該第一實施例主要如下:首先,通過離子濺射技術,在該基板10上形成一金屬薄層,然後再通過電鍍或者化學鍍技術,形成本實施例所述金屬凸台20。具體地,可以包括以下步驟:The first embodiment is mainly as follows: first, a thin metal layer is formed on the
首先,製作具有一對應所述圖案結構200的對應圖案結構的掩膜板,並將該掩膜板貼附在該基板10的上表面103;例如,可以利用一膠粘劑,將該掩膜板貼附在該基板10的上表面103。First, a mask with a corresponding pattern structure corresponding to the
對已貼附所述掩膜板的基板10的上表面103進行鍍金屬層處理,例如利用離子濺射技術,在該基板10的上表面103形成具有所述圖案結構的金屬膜;該金屬膜為形成於該基板10上的一層很薄的金屬層,該金屬膜的厚度為10~200μm。Perform a metal-plating process on the
繼續,再對所述金屬膜鍍一金屬層,使所述金屬膜增厚,例如利用電鍍技術或化學鍍技術,對該金屬膜進行鍍該金屬層,使其整體厚度增加,直至形成所述金屬凸台20。Continue to plate a metal layer on the metal film to increase the thickness of the metal film. For example, electroplating or electroless plating is used to plate the metal layer on the metal film to increase the overall thickness until the metal film is formed.
同樣參照附圖6,本實施例還包括一位於所述金屬凸台20的隔離帶203的一側部的靜電保護器件(Zener)封裝區205,並能在該保護器件封裝區205中封裝一保護器件,以保護整個LED封裝器件,例如,該靜電器件封裝區205可以設置在該隔離帶203的一側部的邊角位置。Also referring to FIG. 6, this embodiment also includes an electrostatic protection device (Zener)
然後,如圖4所示,將該封裝膠體40覆蓋在所述LED晶片30、所述金屬凸台20及裸露的該基板10上,在本實施例中,該封裝膠體40為氟樹脂材料。之後,對已覆蓋所述封裝膠體40的一LED封裝體進行加熱,例如,可以利用真空加壓(在真空環境進行壓制)、溶液烘烤,或熱壓,使該封裝膠體40填充相鄰金屬凸台20之間的所述第一間隔101及所述金屬凸台20的內部固晶區201中的第二間隔102、所述隔離帶202和固晶區201之間的凹陷區204,以及所述隔離帶203的第一部分2032與第二部分2033之間的縫隙等。經該加熱制程後的該封裝膠體40與所述LED晶片30、所述金屬凸台20以及所述基板10之間形成良好的接觸。然後,對所述封裝膠體40進行冷卻,使得所述封裝膠體40黏附在所述LED晶片30、所述金屬凸台20及該基板10上,並且該封裝膠體40因填充了所述金屬凸台20的凹陷區204、縫隙等而與所述金屬凸台20之間能夠形成卡扣連接,該卡扣連接能夠增加該封裝膠體40的黏附力,有效防止該封裝膠體40在運輸或傳送過程中出現該封裝膠體震動而脫落等問題。Then, as shown in FIG. 4, the
另外,因為陶瓷的膨脹係數為1.8*10-5
/℃,氟樹脂材料的熱膨脹係數一般為8~12*10-5
/℃,二者的膨脹係數相差較大,在該封裝器件的封裝過程中,經歷上述的加熱及冷卻的較大的溫度變化時,該封裝膠體40和所述金屬凸台20之間的卡扣連接能夠有效減少所述金屬凸台20外的該封裝膠體40的形變,從而避免該封裝膠體40和該基板10之間出現縫隙。In addition, because the expansion coefficient of ceramic is 1.8*10 -5 /℃, the thermal expansion coefficient of fluororesin materials is generally 8~12*10 -5 /℃, and the difference in expansion coefficient between the two is large. In the above-mentioned large temperature change of heating and cooling, the snap connection between the
在本實施例中,形成在該基板10上的所述金屬凸台20具有相同的厚度,並且所述金屬凸台20(即其中的隔離帶203和固晶區201)的厚度不小於該封裝膠體40厚度的0.1倍,且不大於該封裝膠體40的厚度,所述金屬凸台20和所述封裝膠體40在邊緣的厚度總和(也就是所述金屬凸台20和所述封裝膠體40在該基板10的邊緣上的覆蓋厚度總和)不大於0.1mm,所述金屬凸台20的寬度不小於所述封裝膠體40的最大厚度(該封裝膠體40在所述基板10的邊緣直接接觸所述基板10,而具有自該基板10邊緣沿該切割方向F所量測的最大厚度)的1/3,所述金屬凸台20的寬度指所述金屬凸台20在垂直於自該基板10的上表面103延伸至下表面104的切割方向(參照附圖4所示的切割方向F)上所量測的寬度值。In this embodiment, the
在本實施例的另一變化態樣中,如圖5所示,該基板10包括一具有該上表面103及該下表面104的板體部105,一形成於該板體部105且貫穿該板體的上表面103與該下表面104的導電部60,及一位於所述板體部105的下表面104的焊盤50。該變化態樣的製造步驟主要為:先在該板體部105形成該導電部60,該導電部60包括分別與LED晶片30的正極和負極導通的正極導電部和負極導電部。該導電部60為貫穿所述板體部105的導電孔等類似結構。In another variation of this embodiment, as shown in FIG. 5, the
然後,在該板體部105的下表面104形成所述焊盤50,所述焊盤50包括分別與上述導電部60的正極導電部和負極導電部導通的正極焊盤以及負極焊盤。例如,在圖6所示的結構中,所述導電部60利用頂部直接接觸隔離帶203而與所述LED晶片30的正極和負極導通,且利用底部與所述焊盤50直接接觸而與所述導電部60導通,從而實現所述焊盤50與LED晶片30的正極和負極導通。Then, the
如上所述在所述板體部105的下表面104形成所述焊盤50後,便於後續將LED封裝器件形成後續的表面貼裝器件。並且利用回流焊技術,將上述LED封裝器件焊接到一PCB(電路印刷板)板材上。由於該封裝膠體40和所述金屬凸台20之間形成的卡扣連接,使得該封裝膠體40、該基板10、所述金屬凸台20和所述LED晶片30之間緊密黏結,所以,在上述回流焊過程中,不會產生氣泡等缺陷,因此相應地能夠提高後期產品的良率。After the
第二實施例Second embodiment
本實施例與實施例一的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the first embodiment will not be repeated, and the differences are:
在本實施例中,形成所述金屬凸台20a時,在所述金屬凸台20a的隔離帶203a中形成有各種圖案結構。如圖7所示,在隔離帶203a中形成二個圖案結構。具體地,每一圖案結構包括一帶狀結構2032a,及一鋸齒狀圖案2031a。該鋸齒狀圖案2031a包括多個自所述帶狀結構向內延伸而為向內的鋸齒,或自所述帶狀結構向外延伸而為向外的鋸齒。需說明的是,該隔離帶203a也可是其中一個圖案結構包括所述鋸齒狀圖案2031a。In this embodiment, when the
配合參閱圖4,形成上述鋸齒狀圖案2031a之後,該封裝膠體40填充在所述鋸齒狀圖案2031a所界定的縫隙中,由此增強了該封裝膠體40與該金屬凸台20a之間的卡扣連接強度,增強該封裝膠體40與所述金屬凸台20a、該基板10間的黏結強度。With reference to FIG. 4, after the
在本實施例的一變化態樣中,如圖8所示,在隔離帶203b的每一圖案結構包括該帶狀結構,及一形成於該帶狀結構的鏤空圖案2031b。該鏤空圖案2031b可以是相間隔的多個矩形所形成的鏤空圖案,也可以是多個相間隔的菱形、多個相間隔的橢圓形、多個相間隔的圓形等鏤空圖案。In a variation of this embodiment, as shown in FIG. 8, each pattern structure in the
在本實施例的又一變化態樣中,如圖9所示,在形成所述金屬凸台20c時,為了防止所述隔離帶203c形成的L型結構所占的區域過大,在L型結構的一側也形成所述鏤空圖案,例如形成圓形和/或矩形鏤空圖案2031c。In another variation of this embodiment, as shown in FIG. 9, when the
配合參閱圖4,形成所述鏤空圖案2031b、2031c之後,該封裝膠體40填充在鏤空圖案形成的孔洞中,由此增強了該封裝膠體40與所述金屬凸台20b、20c之間的卡扣連接強度,進而增強該封裝膠體40、所述金屬凸台20b、20c與該基板10間的黏結強度。With reference to FIG. 4, after the
第三實施例The third embodiment
本實施例與該第二實施例的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the second embodiment will not be repeated here. The differences are:
如圖10所示,本實施例中,形成所述金屬凸台20d時,該固晶區201d與該隔離帶203d同樣為同體連接而形成連續結構,並且二者之間不存在凹陷區。該固晶區201d和該隔離帶203d整體上分別形成互相間隔的兩部分,該固晶區201d的兩部分為該正極固晶區2011d和該負極固晶區2012d,且與該正極固晶區2011d同體連接而連續的隔離帶203d的部分可以作為所述LED晶片30(如圖4所示)的正電極區,與該負極固晶區2012d同體連接而連續的隔離帶203d的部分可以作為所述LED晶片30的負電極區。As shown in FIG. 10, in the present embodiment, when the
在本實施例中,所述金屬凸台20d的隔離帶203d中同樣形成有鏤空圖案,例如圖10所示的呈矩形的鏤空圖案2031d。當然,也可以包括例如呈菱形、圓形、橢圓形等其他圖形的鏤空圖案。In this embodiment, a hollow pattern is also formed in the
配合參閱圖4,該封裝膠體40填充在上述鏤空圖案2031d所形成的孔洞中,由此增強了封裝膠體40與所述金屬凸台20d之間的卡扣連接強度,增強該封裝膠體40、所述金屬凸台20d,與該基板10間的黏結強度。4, the
第四實施例Fourth embodiment
本實施例與該第一實施例的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the first embodiment will not be repeated here. The differences are:
如圖11所示,所述金屬凸台20e同樣包括該固晶區201e和該隔離帶203e,在本實施例中,該隔離帶203e形成封閉的環圍結構,並且與該固晶區201e相互間隔,該隔離帶203e與該固晶區201e二者之間界定有該凹陷區204,並且利用該凹陷區204間隔。該隔離帶203e中可以形成該圖案結構,例如,圖11所示的呈矩形的鏤空圖案2031e,當然也可以形成其他形狀(例如菱形、橢圓形、圓形等)的鏤空圖案。並且也可以形成與圖7所示的類似的鋸齒狀圖案等。As shown in FIG. 11, the
本實施例中,由於該固晶區201e和隔離帶203e是相互間隔的結構,二者在結構上不連接且不連續,因此二者也不能形成電導通結構,因此,在本實施例中,與所述LED晶片30(如圖4所示)的正極連接的正極固晶區2011e形成LED晶片30的正極電極區,與所述LED晶片30的負極連接的負極固晶區2012e形成所述LED晶片30的負極電極區。In this embodiment, since the die-
再配合參閱圖5,在本實施例中,形成的所述導電部60通過所述固晶區201e與所述LED晶片30的正極和負極連通,所述焊盤50與所述導電部60連通,從而實現所述導電部30與所述LED晶片30的正極和負極連通。Referring to FIG. 5 again, in this embodiment, the
第五實施例Fifth embodiment
如圖12所示,本發明LED封裝器件的的製造方法的一第五實施例,同樣包括如下步驟:As shown in FIG. 12, a fifth embodiment of the manufacturing method of the LED package device of the present invention also includes the following steps:
提供該基板10,該基板10包括該上表面103和該下表面104,所述基板10可以選擇本領域常用的材料製成,例如陶瓷或矽,優選地為陶瓷基板。The
在該基板10的上表面103形成所述金屬凸台20f(在圖12中以一個表示)。The
將所述LED晶片30f設置在所述金屬凸台20f上。The
本實施例與第一實施例到第四實施例的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the first to fourth embodiments will not be repeated here. The differences are:
在本實施例中,所述LED晶片30f是一垂直型LED晶片,在形成所述金屬凸台20f時,所述固晶區201f與所述隔離帶203f形成相互間隔的結構,二者之間界定有該凹陷區204,並且利用該凹陷區204將該固晶區201f與該隔離帶203相互間隔。並且該隔離帶203f中形成有該鏤空圖案2031f,例如圖12所示的呈多個矩形的鏤空圖案2031f。當然也可以包括其他圖形(例如圓形、菱形、橢圓形等)的鏤空圖案。In this embodiment, the
如圖12所示,該固晶區201f同樣包括該正極固晶區2011f和該負極固晶區2012f,本實施例的垂直型的LED晶片30f設置在該正極固晶區2011f中,並且該正極固晶區的2011f一側的部分區域包括一延伸部分,優選地,該延伸部分自該正極固晶區2011f一側以小於供該LED晶片30f設置的固晶區201的區域的寬度的1/2的寬度延伸,例如圖12所示的自正極固晶區2011f下方一側的左邊以小於供該LED晶片30f設置的正極固晶區2011f的區域的寬度的1/2的寬度延伸。該延伸部分形成與所述LED晶片30的正極電連接的正電極區202f-P。如圖12所示,該負極固晶區2012f形成在與該正電極區202f-P的同一側但與該正電極區202f-P相間隔,並且該負極固晶區2012f與隔離帶203f相互間隔,形成獨立的結構。在本實施例中,還在所述LED晶片30f的負極表面與負極固晶區2012f之間形成一使二者電導通的負極焊線206f,此時,該負極固晶區2012f形成與所述LED晶片30f的負極電連接的負電極區202f-N。該LED封裝器件還包括設置於該金屬凸台20f且在該正電極區202f-P和負電極區202f-N間形成的該保護器件封裝區205f。As shown in FIG. 12, the
如圖12所示,優選地,該正電極區202f-P、負電極區202f-N及二者之間的間隔的總寬度不超過正極固晶區2011f設置所述LED晶片的區域的寬度。As shown in FIG. 12, preferably, the total width of the
如圖13所示,在本實施例的一變化態樣中中,在形成所述金屬凸台20g時,不單獨形成圖12所示的負電極區202f-N,而是在LED晶片30f的負極表面和隔離帶203g之間形成使二者電導通的負極焊線206g,此時,該隔離帶203g同時作為LED晶片30f的負電極區202g-N,且該變化態樣中不含所述負電極區202f-N。並且在該正電極區202g-P和該隔離帶203g間形成該保護器件封裝區205g,因此,該LED封裝器件仍包括該保護器件封裝區205g。並且,該隔離帶203g中同樣形成有該鏤空圖案2031g,例如圖13所示的呈矩形的鏤空圖案2031f。當然也可以包括其他圖形(例如圓形、菱形、橢圓形等)的鏤空圖案。As shown in FIG. 13, in a variation of this embodiment, when forming the
配合參閱圖4,該封裝膠體40填充在上述鏤空圖案形成的孔洞中,由此增強了該封裝膠體40與該金屬凸台20f、20g之間的卡扣連接強度,進而增強該封裝膠體40與該金屬凸台20f、20g、該基板10間的黏結強度。With reference to FIG. 4, the
第六實施例Sixth embodiment
本實施例與上述第一實施例至第五實施例的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the above-mentioned first to fifth embodiments will not be repeated, and the differences are:
參閱圖2、圖4、圖14,本實施例還包括對所述封裝器件進行切割。在形成該封裝膠體40之後,將該LED封裝器件沿圖2所示的所述第一間隔101的中間位置,並沿圖4所示的自該基板的上表面103延伸至下表面104的切割方向F,以單個LED晶片30與單個金屬凸台20為單元對所述封裝器件進行切割,而分割成多個發光體器件,圖14所示為單一個發光體器件,而完成該第六實施例的製造。Referring to FIG. 2, FIG. 4, and FIG. 14, this embodiment further includes cutting the packaged device. After the
由於該封裝膠體40和該金屬凸台20之間形成了所述卡扣連接,因此在切割時,上述卡扣連接能夠產生阻擋效果,有效減少該封裝膠體40底部的形變量,確保靠近所述金屬凸台20的固晶區201(如圖6所示)的封裝膠體40和該基板10緊密結合,不會因為切割受力而從該基板10剝離。Since the buckle connection is formed between the encapsulant 40 and the
第七實施例Seventh embodiment
本實施例提供一種如該第一實施例之LED封裝器件的製造方法所制得的LED封裝器件,再次參照圖4和圖5,該LED封裝器件包括該基板10、所述金屬凸台20、所述LED晶片30,及該封裝膠體40。This embodiment provides an LED packaged device manufactured by the method of manufacturing an LED packaged device of the first embodiment. Referring again to FIGS. 4 and 5, the LED packaged device includes the
該基板10包括該上表面103和該下表面104,所述基板10可以選擇本領域常用的材料製成,例如陶瓷或矽,優選地為陶瓷基板。The
所述金屬凸台20設置在所述基板10的上表面103,所述金屬凸台20可以是通過濺射技術結合電鍍或者化學鍍技術在陶瓷基板上形成的金屬鍍層,該金屬鍍層可以是銅鍍層。如圖2所示,相鄰的金屬凸台20之間界定有所述第一間隔101,即所述金屬凸台20以所述第一間距L1為間距間隔排列。The
所述LED晶片30設置在所述金屬凸台20上,本實施例中,所述LED晶片30是倒裝型的LED晶片。The
參照附圖6,示出了圖3中圓圈部分的結構沿A-A方向剖切的示意圖,所顯示出的金屬凸台20的數量為1個,且LED晶片30的數量也為1個。由圖6可以看出,所述金屬凸台20包括設置於該基板10的中間部分之用於設置LED晶片30的所述固晶區201,所述固晶區201包括相對設置的該正極固晶區2011和該負極固晶區2012(正極固晶區2011和負極固晶區2012的位置不一定是圖中所示右側為正極固晶區2011、左側為負極固晶區2012,該固晶區201的極性是由倒裝設置在其上的LED晶片30的正負極決定,此處僅為了便於說明定義圖中的正極固晶區和負極固晶區的位置),所述LED晶片30是倒裝型,其正極和負極分別與該正極固晶區2011和該負極固晶區2012電連接。如圖6所示,該正極固晶區2011和該負極固晶區2012之間具有該第二間隔102,即該正極固晶區2011和該負極固晶區2012之間具有該第二間距L2。該第二間距L2以及圖2所示的金屬凸台20之間的第一間距L1可以根據LED晶片30的實際大小以及所要形成的封裝器件的尺寸要求來確定。Referring to FIG. 6, a schematic view of the structure of the circled part in FIG. 3 cut along the A-A direction is shown. The number of
仍然參照圖6,所述隔離帶203設置於該基板10的邊緣部分,而為所述金屬凸台20的邊緣部分形,所述隔離帶203與所述固晶區201之間界定有該凹陷區204,該凹陷區204的深度小於該隔離帶203的厚度以及該固晶區201的厚度,該隔離帶203和該固晶區201的厚度相等。優選地,所述凹陷區204的深度/寬度的比例不小於1/2,其中所述凹陷區204的深等於所述金屬凸台20的高度。Still referring to FIG. 6, the
如圖6所示,本實施例中,該隔離帶203大體上可以區分成相互間隔的該第一部分2032與該第二部分2033之兩部分結構,這兩部分結構均具有類似L型的結構,也就是該第一部分2032具有所述L型結構,該第二部分2033也具有所述L型結構。並且,該隔離帶203的的第一部分2032與該正極固晶區2011一體連接而形成一連續結構,該隔離帶203的第二部分2033與該負極固晶區2012形成連續結構。由於該正極固晶區2011和該負極固晶區2012分別與所述LED晶片30的正極和負極連通,而所述隔離帶的第一部分2032與第二部分2033分別於該正極固晶區2011和該負極固晶區2012同體連接而形成連續的結構,因此,該隔離帶203可以作為LED晶片30的電極區202,更具體地,與該正極固晶區2011同體連接而呈連續的隔離帶的該第一部分2032形成LED晶片30的正電極區,與該負極固晶區2012同體連接而呈連續的隔離帶的第二部分2033形成該LED晶片30的負電極區。As shown in FIG. 6, in this embodiment, the
在本實施例中,所述金屬凸台20可以首先通過離子濺射技術在該基板10上形成該金屬薄層,然後再通過電鍍或者化學鍍技術。In this embodiment, the
同樣參照附圖6,在本實施例中,還包括位於所述金屬凸台20的隔離帶203的一側部的該靜電保護器件(Zener)封裝區205,並能在該保護器件封裝區205中封裝該保護器件,以保護整個LED封裝器件,例如,該靜電器件封裝區205可以設置在該隔離帶203的一側部的邊角位置。Also referring to FIG. 6, in this embodiment, the electrostatic protection device (Zener)
然後,配合參閱圖4所示,將該封裝膠體40覆蓋在所述LED晶片30、所述金屬凸台20及裸露的該基板10上,在本實施例中,該封裝膠體40為氟樹脂材料。之後,對已覆蓋所述封裝膠體40的該LED封裝體進行加熱,例如,可以利用溶液烘烤或熱壓,使該封裝膠體40填充相鄰金屬凸台20之間的所述第一間隔101及所述金屬凸台20的內部固晶區201中的第二間隔102、所述隔離帶202和固晶區201之間的凹陷區204,以及所述隔離帶203的第一部分2032與第二部分2033之間的縫隙等。經該加熱過程後的該封裝膠體40與所述LED晶片30、所述金屬凸台20以及所述基板10之間形成良好的接觸。然後,對所述封裝膠體40進行冷卻,使得所述封裝膠體黏附在所述LED晶片30、所述金屬凸台20及該基板10上,並且該封裝膠體40因填充了所述述金屬凸台20的凹陷區203、縫隙等而與所述金屬凸台20之間能夠形成卡扣連接,該卡扣連接能夠增加該封裝膠體40的黏附力,有效防止該封裝膠體40在運輸或傳送過程中出現該封裝膠體40震動脫落等問題。Then, as shown in FIG. 4, the
另外,因為陶瓷的膨脹係數為1.8*10-5
/℃,氟樹脂材料的熱膨脹係數一般為8-12*10-5
/℃,二者的膨脹係數相差較大,在該封裝器件的封裝過程中,經歷上述的加熱及冷卻的較大的溫度變化時,該封裝膠體40和所述金屬凸台20之間的卡扣連接能夠有效減少所述金屬凸台20外的該封裝膠體40的形變,從而避免該封裝膠體40和該基板10之間出現縫隙。In addition, because the expansion coefficient of ceramic is 1.8*10 -5 /℃, the thermal expansion coefficient of fluororesin materials is generally 8-12*10 -5 /℃, and the difference in expansion coefficient between the two is large. In the above-mentioned large temperature change of heating and cooling, the snap connection between the
在本實施例中,所述金屬凸台20具有相同的厚度,並且所述金屬凸台20的厚度不小於該封裝膠體40厚度的0.1倍,且不大於該封裝膠體40的厚度,所述金屬凸台20和所述封裝膠體40在邊緣的厚度總和不大於0.1mm,所述金屬凸台20的邊緣與所述封裝膠體40邊緣間的距離L3不大於0.1mm,所述金屬凸台20的寬度不小於該封裝膠體40的厚度的1/3,所述金屬凸台20的寬度指所述金屬凸台20在垂直於該切割方向(參照附圖4所示的切割方向F)上所量測的寬度。In this embodiment, the
在本實施例的另變化態樣中,如圖5所示,LED封裝器件的基板10還包括該板體部105、所述導電部60,及所述焊盤50。所述導電部60包括分別與正電極區和負電極區對應的一正極導電部和一負極導電部。所述導電部60包括貫穿所述板體部105的導電孔等類似結構。In another variation of this embodiment, as shown in FIG. 5, the
所述焊盤50包括分別與上述導電部60的正極導電部和負極導電部導通的正極焊盤以及負極焊盤。例如,在圖6所示的結構中,所述導電部60利用所述隔離帶203,而與所述LED晶片30的正極和負極導通,所述焊盤50也與導電部60導通,從而使得所述焊盤50與所述LED晶片30的正極和負極導通。The
如上所述在所述板體部105的下表面104形成所述焊盤50,便於後續將LED封裝器件形成後續的表面貼裝器件。並且利用回流焊技術,將上述LED封裝器件焊接到該PCB(電路印刷板)板材上。由於該封裝膠體40和所述金屬凸台20之間形成的卡扣連接,使得該封裝膠體40與該基板10、所述金屬凸台20和所述LED晶片30之間緊密黏結,所述,在上述回流焊過程中,不會產生氣泡等缺陷,因此相應地能夠提高後期產品的良率。As described above, the
第八實施例Eighth embodiment
本實施例提供一種如第二實施例所製造出的LED封裝器件,與第七實施例的相同之處不再贅述,不同之處在於:This embodiment provides an LED package device manufactured as in the second embodiment. The similarities with the seventh embodiment will not be repeated here. The difference is:
本實施例中,所述金屬凸台20a的隔離帶203a中具有各種圖案結構。如圖7所示,隔離帶203a包括所述圖案結構,每一圖案結構包括該帶狀結構,及該鋸齒狀的圖案2031a。該鋸齒狀圖案2031a包括自所述帶狀結構向內延伸而為向內的所鋸齒,或自所述帶狀結構向外延伸而為向外的鋸齒。需說明的是,該隔離帶也可是其中一個圖案結構包括所述鋸齒狀圖案2031a。In this embodiment, the
配合參閱圖4,形成上述鋸齒狀圖案2031a之後,該封裝膠體40填充在所述鋸齒狀圖案2031a所界定的縫隙中,由此增強了該封裝膠體40與所述金屬凸台20a之間的卡扣連接強度,增強該封裝膠體40與所述金屬凸台20a、該基板10間的黏結強度。With reference to FIG. 4, after the
在本實施例的變化態樣中,如圖8所示,隔離帶203b的每一圖案結構包括該帶狀結構,及形成於該帶狀結構的該鏤空圖案2031b。該鏤空圖案2031b可以是相間隔的多個矩形所形成的鏤空圖案,也可以是多個相間隔的菱形、多個相間隔的橢圓形、多個相間隔的圓形等鏤空圖案。In a variation of this embodiment, as shown in FIG. 8, each pattern structure of the
在本實施例中,如圖9所示,為了防止所述金屬凸台20c的所述隔離帶203c的L型結構所占的區域過大,在L型結構的一側也包括所述鏤空圖案,例如包括圓形和/或矩形鏤空圖案2031c。In this embodiment, as shown in FIG. 9, in order to prevent the area occupied by the L-shaped structure of the
配合參閱圖4,形成上述鏤空圖案之後,該封裝膠體40填充在鏤空圖案形成的孔洞中,由此增強了該封裝膠體40與所述金屬凸台20b之間的卡扣連接強度,進而增強該封裝膠體40與所述金屬凸台20b、該基板10間的黏結強度。With reference to FIG. 4, after the above-mentioned hollow pattern is formed, the
第九實施例Ninth embodiment
本實施例提供一種如該第三實施例所製造出的LED封裝器件。如圖10所示,本實施例中,所述金屬凸台20d的固晶區201d與隔離帶203d同樣為同體連接而包括連續結構,並且二者之間不存在凹陷區。該固晶區201d和該隔離帶203d整體上分別形成互相間隔的兩部分,該固晶區201d的這兩部分為該正極固晶區2011d和該負極固晶區2012d,且與該正極固晶區2011d同體連接而連續的隔離帶203d的部分可以作為所述LED晶片30的正電極區,與該負極固晶區2012d同體連接而連續的隔離帶203d的部分可以作為所述LED晶片30的負電極區。This embodiment provides an LED package device manufactured as in the third embodiment. As shown in FIG. 10, in this embodiment, the
在本實施例中,所述金屬凸台20d的隔離帶203d中同樣形成有鏤空圖案,例如圖10所示的呈矩形的鏤空圖案2031d。當然,也可以包括例如呈菱形、圓形、橢圓形等其他圖形的鏤空圖案。In this embodiment, a hollow pattern is also formed in the
配合參閱圖4,該封裝膠體40填充在上述鏤空圖案2031d所形成的孔洞中,由此增強了該封裝膠體40與所述金屬凸台20d之間的卡扣連接強度,增強該封裝膠體40、所述金屬凸台20d,與該基板10間的黏結強度。With reference to FIG. 4, the
第十實施例Tenth embodiment
本實施例提供一種如該第四實施例所製造出的LED封裝器件。本實施例與該第七實施例的相同之處不再贅述,不同之處在於:This embodiment provides an LED package device manufactured as in the fourth embodiment. The similarities between this embodiment and the seventh embodiment will not be repeated here, and the differences are:
如圖11所示,所述金屬凸台20e同樣包括該固晶區201e和該隔離帶203e,在本實施例中,該隔離帶203e為封閉的環圍結構,並且與該固晶區201e相互間隔,該隔離帶203e與該固晶區201e二者之間利用該凹陷區204進行隔離。該隔離帶203e中可以包括該圖案結構,例如,圖11所示的呈矩形的鏤空圖案2031e,當然也可以包括其他形狀(例如菱形、橢圓形、圓形等)的鏤空圖案。並且也可以包括與圖7所示的類似的鋸齒狀圖案等。As shown in FIG. 11, the
本實施例中,由於該固晶區201e和隔離帶203e是相互間隔的結構,二者在結構上不連接且不連續,因此二者也不能形成電導通結構,因此,在本實施例中,與所述LED晶片30(如圖4所示)的正極連接的正極固晶區2011e形成LED晶片30的正極電極區,與所述LED晶片30的負極連接的負極固晶區2012e形成所述LED晶片30的負極電極區。In this embodiment, since the die-
再配合參閱圖5,在本實施例中,所述導電部60通過所述固晶區201e與所述LED晶片30的正極和負極連通,所述焊盤50與所述導電部60連通,從而實現所述導電部30與所述LED晶片30的正極和負極連通。Referring to FIG. 5 again, in this embodiment, the
第十一實施例Eleventh embodiment
本實施例提供一種如該第五實施例所製造出的LED封裝器件。This embodiment provides an LED package device manufactured as in the fifth embodiment.
如圖12所示,所述基板10可以選擇本領域常用的材料製成,例如陶瓷或矽,優選地為陶瓷基板。As shown in FIG. 12, the
所述金屬凸台20f形成在所述基板10的上表面103。The
所述LED晶片30f分別設置在所述金屬凸台20f上。The
本實施例與上述該第七實施例到該第十實施例的相同之處不再贅述,不同之處在於:The similarities between this embodiment and the seventh embodiment to the tenth embodiment described above will not be repeated here. The differences are:
在本實施例中,所述LED晶片30f垂直型的LED晶片,所述金屬凸台20f的固晶區201f與隔離帶203f形成相互間隔的結構,二者之間界定有該凹陷區204,並且利用該凹陷區204將該固晶區201f與該隔離帶203相互間隔。並且該隔離帶203f包括該鏤空圖案2031f,例如圖12所示的呈多個矩形的鏤空圖案2031f。當然也可以包括其他圖形(例如圓形、菱形、橢圓形等)的鏤空圖案。In this embodiment, the
如圖12所示,該固晶區201f同樣包括該正極固晶區2011f和該負極固晶區2012f,本實施例的垂直型的LED晶片30f設置在該正極固晶區2011f中,並且該正極固晶區2011f的一側的部分區域包括一延伸部分,優選地,該延伸部分自該正極固晶區2011f的一側部以小於供該LED晶片30f設置的固晶區201的區域的寬度的1/2的寬度延伸,例如圖12所示的自該正極固晶區2011f下方一側的左邊以小於供該LED晶片30f設置的正極固晶區2011f的區域的寬度的1/2的寬度向下延伸。該延伸部分形成與所述LED晶片30的正極電連接的正電極區202f-P。如圖12所示,該負極固晶區2012f形成在與該正電極區202f-P的同一側但與該正電極區202f-P相間隔,並且該負極固晶區2012f與隔離帶203f相互間隔,形成獨立的結構。在所述LED晶片30f的負極表面與負極固晶區2012f之間形成使二者電導通的該負極焊線206f,此時,該負極固晶區2012f形成與所述LED晶片30f的負極電連接的負電極區202f-N。該LED封裝器件還包括設置於該金屬凸台20f且在在該正電極區202f-P和負電極區202f-N間形成的該保護器件封裝區205f。As shown in FIG. 12, the
如圖12所示,優選地,該正電極區202f-P、負電極區202f-N及二者之間的間隔的總寬度不超過正極固晶區2011f設置所述LED晶片的區域的寬度。As shown in FIG. 12, preferably, the total width of the
如圖13所示,在本實施例的變化態樣中,在形成所述金屬凸台20g時,不單獨形成圖12所示的負電極區202f-N,而是在LED晶片30f的負極表面和隔離帶203g之間形成使二者電導通的負極焊線206g,此時,該隔離帶203g同時作為LED晶片30f的負電極區202g-N,且該變化態樣中不含所述負電極區202f-N。並且在該正電極區202g-P和該隔離帶203g間形成該保護器件封裝區205g,因此,該LED封裝器件仍包括該保護器件封裝區205g。並且,該隔離帶203g中同樣形成有該鏤空圖案2031g,例如圖13所示的呈矩形的鏤空圖案2031f。當然也可以包括其他圖形(例如圓形、菱形、橢圓形等)的鏤空圖案。As shown in FIG. 13, in a variation of this embodiment, when forming the
配合參閱圖4,該封裝膠體40填充在上述鏤空圖案形成的孔洞中,由此增強了該封裝膠體40與該金屬凸台20f、20g之間的卡扣連接強度,進而增強該封裝膠體40、該金屬凸台20f、20g,與該基板10間的黏結強度。With reference to FIG. 4, the
第十二實施例Twelfth embodiment
本實施例提供一種如該第五實施例所製造出的發光體器件。,與上述該第十一實施例的相同之處不再贅述,不同之處在於:This embodiment provides a luminous body device manufactured as in the fifth embodiment. The similarities with the above-mentioned eleventh embodiment will not be repeated here, the difference is:
參閱圖2、圖4、圖14,本實施例單個發光體器件包括將該LED封裝器件沿圖2所示的第一間隔101的中間位置,並沿圖4所示的該切割方向F切割出的單個發光體器件。由於該封裝膠體40和所述金屬凸台20之間形成了卡扣連接,因此,該發光體器件在使用過程中不易出現該封裝膠體40脫落或剝離等問題。Referring to FIGS. 2, 4, and 14, the single luminous body device of this embodiment includes the LED package device being cut along the middle position of the
如上所述,本發明的LED封裝器件及其製造方法,至少包括以下有益效果:As mentioned above, the LED package device and the manufacturing method thereof of the present invention include at least the following beneficial effects:
一、本發明利用在所述金屬凸台20中形成圖案,該封裝膠體40不僅覆蓋所述LED晶片30、所述金屬凸台20和該基板10,同時還填充所述金屬凸台20之間的第一間隙以及所述金屬凸台20中的圖案結構200形成的孔隙2001,由此,該封裝膠體40和所述金屬凸台20之間形成卡扣連接,進而增加該封裝膠體40的黏附力,有效防止該封裝膠體40在運輸或傳送過程中出現該封裝膠體40震動而脫落等問題。1. The present invention utilizes a pattern formed in the
二、由於該封裝膠體40和所述LED晶片30、所述金屬凸台20及該基板10間的緊密黏結,還能有效避免利用回流焊技術在該基板10的下表面104形成所述焊盤50時,出現回流焊氣泡等缺陷,從而保證後續產品的良率。2. Due to the close bonding between the encapsulant 40 and the
三、在切割時,該封裝膠體40和所述金屬凸台20之間的上述卡扣連接能夠產生阻擋效果,有效減少封裝膠體底部的形變量,確保靠近所述金屬凸台20的固晶區201的封裝膠體40和該基板10緊密結合,不會因為切割受力而從該基板10剝離。3. During cutting, the above-mentioned snap connection between the encapsulant 40 and the
四、在該封裝膠體40經歷較大的溫度變化時,儘管本發明中採用的陶瓷制的該基板20和氟樹脂材料所製成的封裝膠體40的熱膨脹係數相差較大,但是由於該封裝膠體40和所述金屬凸台20之間能夠形成卡扣連接,因此能夠有效減少所述金屬凸台20外的所述封裝膠體40的形變,從而避免所述封裝膠體40和該基板10之間出現縫隙。4. When the
五、另外,本發明所述的LED封裝器件的製備方法過程比較簡單,封裝效果好,有利於降低封裝成本、增加經濟效益。5. In addition, the manufacturing method of the LED packaging device of the present invention has a relatively simple process and a good packaging effect, which is beneficial to reduce packaging costs and increase economic benefits.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to This invention patent covers the scope.
10:基板 101:第一間隔 102:第二間隔 103:上表面 104:下表面 105:板體部 20:金屬凸台 200:圖案結構 2001:孔隙 201:固晶區 2011:正極固晶區 2012:負極固晶區 202:電極區 203:隔離帶 2032:第一部分 2033:第二部分 204:凹陷區 205:保護器件封裝區 206:金屬連接區域 207:外周面 208:內側面 20a:金屬凸台 203a:隔離帶 2031a:鋸齒狀圖案 2032a:帶狀結構 20b:金屬凸台 203b:隔離帶 2031b:鏤空圖案 20c:金屬凸台 203c:隔離帶 2031c:鏤空圖案 20d:金屬凸台 201d:固晶區 2011d:正極固晶區 2012d:負極固晶區 203d:隔離帶 2031d:鏤空圖案 20e:金屬凸台 201e:固晶區 2011e:正極固晶區 2012e:負極固晶區 203e:隔離帶 2031e:鏤空圖案 20f:金屬凸台 201f:固晶區 202f-P:正電極區 202f-N:負電極區 203f:隔離帶 2031f:鏤空圖案 205f:保護器件封裝區 20g:金屬凸台 201g:固晶區 202g-P:正電極區 202g-N:負電極區 203g:隔離帶 2031g:鏤空圖案 205g:保護器件封裝區 30:LED晶片 30f:LED晶片 40:封裝膠體 50:焊盤 60:導電部 F:切割方向 L1:第一間距 L2:第二間距 Ls:外周長度 Li:內側總長度 Lc:寬度 Lm:寬度 10: substrate 101: first interval 102: second interval 103: upper surface 104: lower surface 105: Board body 20: Metal boss 200: pattern structure 2001: Porosity 201: Bonding area 2011: Positive crystal bonding area 2012: Negative die bonding area 202: Electrode area 203: Isolation Belt 2032: Part One 2033: Part Two 204: sunken area 205: Protection device packaging area 206: Metal connection area 207: Outer peripheral surface 208: inside 20a: Metal boss 203a: isolation belt 2031a: zigzag pattern 2032a: Ribbon structure 20b: Metal boss 203b: Barrier 2031b: hollow pattern 20c: Metal boss 203c: isolation belt 2031c: hollow pattern 20d: Metal boss 201d: die bonding area 2011d: Positive crystal bonding area 2012d: Negative die bonding area 203d: isolation belt 2031d: hollow pattern 20e: Metal boss 201e: die bonding area 2011e: positive die bonding area 2012e: Negative die bonding area 203e: isolation belt 2031e: hollow pattern 20f: Metal boss 201f: die bonding area 202f-P: positive electrode area 202f-N: negative electrode area 203f: isolation belt 2031f: hollow pattern 205f: Protection device packaging area 20g: metal boss 201g: die bonding area 202g-P: positive electrode area 202g-N: negative electrode area 203g: isolation belt 2031g: hollow pattern 205g: protection device packaging area 30: LED chip 30f: LED chip 40: Encapsulation colloid 50: pad 60: conductive part F: Cutting direction L1: first pitch L2: second spacing Ls: outer circumference length Li: Total inner length Lc: width Lm: width
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1顯示為本發明LED封裝器件的製造方法的一第一實施例的流程示意圖; 圖2為圖1所示方法中,在一基板上形成多個金屬凸台所呈現的結構示意;。 圖3為圖1所示方法中,將多個LED晶片分別設置在所述金屬凸臺上的結構示意圖; 圖4顯示為圖1所示方法中,將一封裝膠體覆蓋在所述LED晶片、所述金屬凸台及該基板上的結構示意圖; 圖5顯示為在該基板的一下表面形成多個焊盤的結構示意圖; 圖6為圖3之圓圈部分沿A-A方向剖切的結構示意圖; 圖7和圖8分別為本發明一第二實施例及一第八實施例八中的金屬凸台的示意圖; 圖9為該第二實施例及該第八實施例的金屬凸台的另一變化態樣的示意圖; 圖10為本發明一第三實施例及一第九實施例中的金屬凸台的示意圖; 圖11為本發明一第四實施例及一第十實施例中的金屬凸台的結構示意圖; 圖12為本發明一第五實施例及一第十一實施例中,在所述金屬凸臺上設置一垂直LED晶片所呈現的示意圖; 圖13為該第五實施例及該第十一實施例十一的一變化態樣示意圖;及 圖14為本發的一第六實施例及一第十二實施例之的單一發光器件的剖視示意圖。Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 shows a schematic flow chart of a first embodiment of the manufacturing method of the LED package device of the present invention; 2 is a schematic diagram showing the structure of forming a plurality of metal bosses on a substrate in the method shown in FIG. 1; FIG. 3 is a schematic diagram of the structure in which a plurality of LED chips are respectively arranged on the metal boss in the method shown in FIG. 1; 4 is a schematic diagram showing the structure of covering the LED chip, the metal boss and the substrate with a packaging glue in the method shown in FIG. 1; FIG. 5 is a schematic diagram showing the structure of forming multiple pads on the lower surface of the substrate; Figure 6 is a schematic structural view of the circled part of Figure 3 cut along the A-A direction; 7 and 8 are schematic diagrams of metal bosses in a second embodiment and an eighth embodiment of the invention, respectively; 9 is a schematic diagram of another modification of the metal boss of the second embodiment and the eighth embodiment; 10 is a schematic diagram of a metal boss in a third embodiment and a ninth embodiment of the present invention; 11 is a schematic diagram of the structure of a metal boss in a fourth embodiment and a tenth embodiment of the present invention; 12 is a schematic diagram of a vertical LED chip disposed on the metal boss in a fifth embodiment and an eleventh embodiment of the present invention; FIG. 13 is a schematic diagram of a modified aspect of the fifth embodiment and the eleventh embodiment; and 14 is a schematic cross-sectional view of a single light-emitting device of a sixth embodiment and a twelfth embodiment of the present invention.
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