CN109830589B - LED packaging device and manufacturing method thereof - Google Patents
LED packaging device and manufacturing method thereof Download PDFInfo
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- CN109830589B CN109830589B CN201910086438.9A CN201910086438A CN109830589B CN 109830589 B CN109830589 B CN 109830589B CN 201910086438 A CN201910086438 A CN 201910086438A CN 109830589 B CN109830589 B CN 109830589B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention provides an LED packaging device and a manufacturing method thereof, wherein the method comprises the following steps: providing a substrate having an upper surface and a lower surface; forming at least one metal boss on the upper surface of the substrate, wherein a first interval is formed between the metal bosses; arranging the inverted LED chip on the metal boss; and covering the LED chip, the metal boss and the substrate with the packaging colloid, wherein the metal boss is provided with a pattern structure and the packaging colloid is in buckle connection with the metal boss. The buckle connection increases the adhesive force between the packaging colloid and the substrate, effectively reduces the deformation quantity at the bottom of the packaging colloid during cutting, ensures that the packaging colloid close to the die bonding area of the metal boss is tightly combined with the substrate, and cannot be peeled off due to cutting stress; the substrate and the packaging colloid are effectively prevented from being peeled off due to different thermal expansion deformation in the use process of the packaging body; effectively preventing the package body from vibrating and falling off in the transportation or transmission process.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to an LED packaging device and a packaging method.
Background
With the improvement of the technology, the cost of the deep ultraviolet LED is reduced, the efficiency is improved, and the deep ultraviolet LED is more and more widely applied. Particularly, the time for exiting the market of the traditional mercury lamp is more and more, and the demand of the deep ultraviolet LED lamp is in the beginning of the outbreak.
The existing deep ultraviolet LED package mainly comprises a ceramic bowl and quartz glass. The package has the disadvantages of overlarge volume and high price, and the light-emitting efficiency of the package is low because the light firstly goes from the sapphire to the air and then goes to the quartz glass.
Still others have molded silicone packages with planar ceramic substrates. The main disadvantages of this package are that deep ultraviolet light (below 290 nm) is very destructive to silica gel, it is easily broken by long-term irradiation, and the transmittance of silica gel to deep ultraviolet light is relatively low. The other common packaging colloid is a fluorine-containing material, but the fluorine-containing material is particularly difficult to process due to the problem of adhesion, and is easy to have the problems of cutting and falling, vibration and falling, reflow soldering bubbles and the like during cutting.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an LED package device and a method for manufacturing the same, which are used to solve the problems of the prior art, such as poor adhesion between the encapsulant and the substrate and easy detachment.
To achieve the above and other related objects, a first aspect of the present invention provides an LED package device, comprising:
a substrate comprising an upper surface and a lower surface;
at least one metal boss disposed on an upper surface of the substrate, at least one of the metal bosses having a first space therebetween;
the LED chip is arranged on the metal boss;
a packaging colloid covering the LED chip, the metal boss and the substrate;
the metal boss is provided with a pattern structure, and the packaging colloid is connected with the metal boss with the pattern structure in a buckling mode.
Preferably, the metal boss includes a metal plating layer formed on the substrate.
Preferably, the thickness of the metal boss is greater than or equal to 0.1 times of the thickness of the encapsulant.
Preferably, the distance between the edge of the metal boss and the edge of the encapsulant is less than or equal to 0.1 mm.
Preferably, the width of the metal boss is greater than or equal to 1/3 of the thickness of the encapsulant, wherein the width of the metal boss refers to the width of the metal boss in the direction perpendicular to the cutting direction.
Preferably, the metal boss comprises a die bonding area and an isolation strip.
More preferably, the die bonding region is located in the middle of the metal boss, and the die bonding region includes an anode die bonding region and a cathode die bonding region which are oppositely arranged and separated from each other at a second interval, wherein the anode die bonding region is connected to the anode of the LED chip, and the cathode die bonding region is connected to the cathode of the LED chip.
More preferably, the isolation strip is located at an edge portion of the metal boss, and the isolation strip has a pattern structure.
Preferably, the thicknesses of the solid crystal region and the isolation strip are the same.
Preferably, the isolation zone comprises a closed structure and is separated from the solid crystal zone.
Preferably, the isolation strip forms a first portion and a second portion spaced apart from each other, and the first portion and the second portion include an L-shaped structure.
Preferably, the pattern structure of the isolation belt comprises a zigzag pattern or a hollowed-out pattern, wherein the zigzag pattern comprises inward serrations or outward serrations along the circumferential direction of the isolation belt.
Preferably, the encapsulant is solution baked or hot-pressed to fill the gap between each pair of metal bosses and to fill the holes or gaps formed by the patterns, so as to form the snap connection.
Preferably, the isolation strip further comprises a protection device encapsulation region located at one side of the isolation strip.
Preferably, a concave area is arranged between the isolation belt and the solid crystal area.
Preferably, the height/width of the recessed region is greater than or equal to 1/2.
Preferably, the thickness of the recessed region is smaller than that of the isolation zone and/or the thickness of the recessed region is smaller than that of the solid crystal region.
Preferably, the substrate includes:
a conductive portion in the substrate and penetrating the substrate, the conductive portion including a positive conductive portion and a negative conductive portion respectively conductive with a positive electrode and a negative electrode of the LED chip; and
and the bonding pad is positioned on the lower surface of the substrate and comprises a positive bonding pad and a negative bonding pad which are respectively conducted with the positive conductive part and the negative conductive part.
Preferably, the light emitting device further comprises a single light emitting device cut from the packaged device along an intermediate position of the first interval.
To achieve the above and other related objects, a second aspect of the present invention provides a method for manufacturing an LED package device, comprising:
providing a substrate, wherein the substrate is provided with an upper surface and a lower surface;
forming at least one metal boss on the upper surface of the substrate, wherein a first interval is formed between the at least one metal boss;
arranging an LED chip on the metal boss;
covering the LED chip, the metal boss and the substrate with a packaging colloid;
the metal boss is provided with a pattern structure, and the packaging colloid is connected with the metal boss with the pattern structure in a buckling mode.
Preferably, the forming of at least one metal boss on the upper surface of the substrate includes the steps of:
manufacturing a mask plate with the pattern structure, and attaching the mask plate to the upper surface of the substrate;
performing metal layer plating treatment on the upper surface of the substrate attached with the mask plate, and forming a metal film with the pattern structure on the upper surface of the substrate;
and continuing to plate the metal layer on the metal film to increase the thickness of the metal film until the metal boss is formed.
Preferably, the thickness of the metal boss is greater than or equal to 0.1 times of the thickness of the encapsulant.
Preferably, the distance between the edge of the metal boss and the edge of the encapsulant is less than or equal to 0.1 mm.
Preferably, the width of the metal boss is greater than or equal to 1/3 of the thickness of the encapsulant, wherein the width of the metal boss refers to the width of the metal boss in the direction perpendicular to the cutting direction.
Preferably, the metal boss comprises a die bonding area and an isolation strip.
Preferably, the die bonding region is formed in the middle of the metal boss, and the die bonding region includes an anode die bonding region and a cathode die bonding region which are oppositely arranged and separated from each other at a second interval, wherein the anode die bonding region is connected to the anode of the LED chip, and the cathode die bonding region is connected to the cathode of the LED chip.
Preferably, the isolation band is formed at an edge portion of the metal boss, and the pattern structure is formed in the isolation band.
Preferably, the thicknesses of the solid crystal region and the isolation strip are the same.
Preferably, the isolation belt forms a closed structure and is separated from the solid crystal region.
Preferably, the isolation strip forms a first portion and a second portion spaced apart from each other, and the first portion and the second portion include an L-shaped structure.
Preferably, the pattern structure of the isolation belt comprises a zigzag pattern or a hollow pattern, wherein the zigzag pattern comprises inward serrations or outward serrations along the circumferential direction of the isolation belt.
Preferably, the step of covering the LED chip, the metal bosses and the substrate with a packaging adhesive further includes solution baking or hot pressing the packaging adhesive, and the packaging adhesive fills the first spaces between the metal bosses and the holes or gaps formed by the pattern structures to form the snap connection.
Preferably, the method further comprises forming an electrostatic protection device packaging area on one side of the isolation belt.
Preferably, a concave area is arranged between the solid crystal area and the isolation belt.
Preferably, the height/width of the recessed region is greater than or equal to 1/2.
Preferably, the thickness of the recessed region is smaller than that of the isolation zone and/or the thickness of the recessed region is smaller than that of the solid crystal region.
Preferably, the manufacturing method further comprises the steps of:
forming a conductive part penetrating through the substrate in the substrate, wherein the conductive part comprises a positive conductive part and a negative conductive part which are respectively conducted with a positive electrode and a negative electrode of the LED chip;
and forming a pad on the lower surface of the substrate, wherein the pad comprises a positive pad and a negative pad which are respectively conducted with the positive conductive part and the negative conductive part.
Preferably, the manufacturing method further includes dicing the packaged device, wherein the packaged device is diced in units of a single light emitter at the middle position of the first interval.
As described above, the LED package device and the method for manufacturing the same according to the present invention have the following advantageous effects:
according to the method, the pattern is formed in the metal boss, the packaging colloid covers the LED chip, the metal boss and the substrate, and meanwhile, gaps among the metal bosses and gaps or holes formed by the pattern in the metal boss are filled, so that the packaging colloid is connected with the metal boss in a buckling mode. The adhesive force of the packaging colloid is increased, and the problems that the packaging colloid shakes and falls off in the transportation or transmission process of the packaging body are effectively prevented.
Due to the tight adhesion among the packaging colloid, the LED chip, the metal lug boss and the substrate, the defects of reflow soldering bubbles and the like when a bonding pad is formed on the lower surface of the substrate through reflow soldering are effectively avoided, and the yield of subsequent products is ensured.
When the cutting, above-mentioned buckle between encapsulation colloid and the metal boss is connected and can be played the effect that blocks, effectively reduces the deformation volume of encapsulation colloid bottom, guarantees to be close to the encapsulation colloid and the base plate of the solid crystalline region of metal boss and closely combines, can not peel off from the base plate because of the cutting atress.
When the packaging body experiences larger temperature change, although the difference between the thermal expansion coefficients of the ceramic substrate and the fluororesin packaging colloid is larger, the packaging colloid and the metal boss can form buckle connection, so that the deformation of the packaging colloid outside the metal boss can be effectively reduced, and the gap between the packaging colloid and the substrate is avoided.
In addition, the preparation method of the LED packaging device is simple in process and good in packaging effect, and is beneficial to reducing the packaging cost and increasing the economic benefit.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for manufacturing an LED package device according to an embodiment.
Fig. 2 is a schematic structural diagram of a metal bump formed on a substrate in the method shown in fig. 1.
Fig. 3 is a schematic structural diagram showing the LED chip disposed on the metal bump in the method shown in fig. 1.
Fig. 4 is a schematic structural view showing the method of fig. 1 in which the chip, the metal bump, and the substrate are covered with the encapsulant.
Fig. 5 shows a schematic structural diagram of a bonding pad formed on the lower surface of the substrate.
FIG. 6 is a schematic view of the structure of FIG. 3 showing the direction of the circled portion A-A.
Fig. 7 and 8 are schematic structural views of metal bosses in the second embodiment and the eighth embodiment.
Fig. 9 is a schematic structural view of the metal boss in the preferred embodiment of the second embodiment and the eighth embodiment.
Fig. 10 is a schematic structural view of a metal boss in the third and ninth embodiments.
Fig. 11 is a schematic structural diagram of a metal boss in the fourth embodiment and the tenth embodiment.
Fig. 12 is a schematic structural diagram showing a structure in which a vertical LED chip is disposed on a metal pad in the method provided in the fifth embodiment and the semiconductor device provided in the eleventh embodiment.
Fig. 13 is a schematic structural diagram of a metal boss in a preferred embodiment of the fifth embodiment and the eleventh embodiment.
Fig. 14 is a schematic structural diagram of a single light-emitting body provided in the sixth embodiment and the twelfth embodiment.
Description of the element reference numerals
10 base plate
101 first interval
102 second interval
20 metal boss
201 solid crystal region
2011 positive solid crystal region
2012 negative crystal fixing region
202 electrode area
203 isolation belt
204 recessed area
205 protect device package region
20a metal boss
203a isolation belt
2031a zigzag pattern
20b metal boss
203b isolation belt
2031b hollow pattern
20c metal boss
203c isolation belt
2031c hollow pattern
20d metal boss
201d solid crystal region
2011d positive pole crystal fixing area
2012d negative crystal fixing region
203d isolation belt
2031d hollow pattern
20e metal boss
201e solid crystal region
203e isolation belt
2031e hollow pattern
20f metal boss
201f solid crystal region
202f-P positive electrode region
202f-N negative electrode region
203f isolation belt
2031f hollow pattern
205f protection device package region
20g metal boss
201g solid crystal region
202g-P positive electrode region
202g-N negative electrode region
203g isolation belt
2031g hollow pattern
205g protection device package area
30 flip LED chip
30f vertical LED chip
40 packaging colloid
50 bonding pad
60 conductive part
Direction of cut F
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
The refractive index n of the inorganic fluororesin material is about 1.34, the ultraviolet light transmittance is high, and the reliability is good, so that the fluororesin material is a very good deep ultraviolet LED packaging material. However, the fluorine-containing material is particularly difficult to process due to the problem of adhesion, and is liable to cause problems such as cutting-off, vibration-off, and reflow bubbles.
Example one
The embodiment provides a manufacturing method of an LED packaging device, as shown in FIGS. 1-4, comprising the following steps:
a substrate 10 is provided, the substrate 10 comprising an upper surface and a lower surface, and the substrate 10 may be made of a material commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.
As shown in fig. 2, at least one metal bump 20 is formed on the upper surface of the substrate 10, and as shown in fig. 2, the metal bumps 20 have a first interval 101 therebetween, that is, the metal bumps are spaced at a first interval L1Are arranged at intervals.
Next, as shown in fig. 3, the LED chip 30 is disposed on the metal bump 20, and in the present embodiment, the LED chip is a flip LED chip.
Referring to fig. 6, a schematic view of the structure of the circled portion in fig. 3 along the a-a direction is shown. As can be seen from fig. 6, the metal boss 20 includes a solid crystal region 201 in the middle portion for disposing the flip-chip LED chip 30, the solid crystal region 201 includes a positive solid crystal region 2011 and a negative solid crystal region 2012 which are disposed oppositely (the positions of the positive solid crystal region 2011 and the negative solid crystal region 2012 are not necessarily the positive solid crystal region 2011 on the right side and the negative solid crystal region 2012 on the left side in the drawing, the polarity of the solid crystal region is determined by the positive and negative electrodes of the LED chip disposed thereon in an inverted manner, and the positions of the positive solid crystal region and the negative solid crystal region in the drawing are defined only for convenience of description), the LED chip is inverted, and the positive electrode and the negative electrode of the LED chip are connected with the positive solid crystal region 2011 and the negative solid crystal region 2012 respectively. As shown in fig. 6, a second interval 102 is provided between the positive solid crystal region 2011 and the negative solid crystal region 2012, i.e. a second distance L is provided between the positive solid crystal region 2011 and the negative solid crystal region 20122. The second interval L2And a first spacing L between the metal bosses 20 shown in FIG. 21May be determined based on the actual size of the LED chip and the dimensional requirements of the packaged device to be formed.
Still referring to fig. 6, an isolation strip 203 is formed at the edge portion of the metal boss 20, a recessed region 204 exists between the isolation strip 203 and the solid crystal region 201, the thickness of the recessed region is smaller than that of the isolation strip 203 and/or the thickness of the recessed region is smaller than that of the solid crystal region 201, and the thicknesses of the isolation strip 203 and the solid crystal region 201 are equal. Preferably, the height/width ratio of the recessed region 204 is greater than or equal to 1/2, wherein the height of the recessed region 204 is equal to the height of the metal boss.
As shown in fig. 6, the isolation zone 203 in this embodiment can be regarded as two separate structures, each of which has a structure similar to an L shape, and one portion of the isolation zone 203 and the positive solid crystal region 2011 form a continuous structure, and the other portion and the negative solid crystal region 2012 form a continuous structure. Because the positive electrode die bonding area 2011 and the negative electrode die bonding area 2012 are respectively communicated with the positive electrode and the negative electrode of the LED chip, and two parts of the isolation strip respectively form a continuous structure in the positive electrode die bonding area 2011 and the negative electrode die bonding area 2012, the isolation strip 203 can be used as an electrode area of the LED chip, the isolation strip part continuous with the positive electrode die bonding area 2011 forms a positive electrode area of the LED chip, and the isolation strip part continuous with the negative electrode die bonding area 2012 forms a negative electrode area of the LED chip.
In a preferred embodiment of the present invention, a metal thin layer may be formed on the substrate 10 by an ion sputtering process, and then the metal bump 20 described in the present embodiment may be formed by an electroplating or electroless plating process. Specifically, the method may include the steps of:
firstly, manufacturing a mask plate with the pattern structure, and attaching the mask plate to the upper surface of a substrate 10; the mask may be attached to the upper surface of the substrate 10 using, for example, an adhesive.
After the mask is attached, performing a metal layer plating process on the upper surface of the substrate 10 through the mask, for example, forming a metal film having the pattern structure on the upper surface of the substrate 10 through an ion sputtering process; the metal film is a thin metal layer, for example, 10 to 200 μm, on the substrate 10.
Continuing to metallize the metal film to increase the thickness of the metal film, e.g., further metallizing the metal film by an electroplating process or an electroless plating process to increase the thickness thereof until the metal bumps are formed.
Referring also to fig. 6, in a preferred embodiment of the present invention, an electrostatic protection device (Zener) packaging region 205 is formed on one side of the isolation strip 203 of the metal boss 20, and the protection device is packaged in the protection device packaging region 205 to protect the whole LED package device, for example, the electrostatic protection device packaging region 205 may be formed at an angular position on one side of the isolation strip.
Then, as shown in fig. 4, the encapsulant 40 covers the LED chip 30, the metal bumps 20, and the substrate 10, and in a preferred embodiment of the present embodiment, the encapsulant 40 is preferably a fluororesin material. The LED package covered with the encapsulant 40 is heated, for example, by vacuum pressurization, solution baking, or hot pressing, so that the encapsulant 40 fills the first space 101 between the metal bumps 20, the second space 102 in the die bonding region 201 inside the metal bumps, the recessed region 204 between the isolation tape and the die bonding region, and the gap between the two portions of the isolation tape 203. After the heating process, the encapsulant forms good contact with the LED chip 30, the metal bumps 20, and the substrate. Then it is right the packaging body cools off, and the packaging colloid adhesion is on LED chip 30, metal boss 20 and base plate 10 to the packaging colloid can form the buckle connection because of having filled above-mentioned metal boss depressed area, gap etc. and between the metal boss 20, this buckle connection can increase the adhesive force of packaging colloid, effectively prevents that the packaging body from appearing the packaging colloid vibrations in transportation or transfer process and droing scheduling problem.
In addition, the expansion coefficient of the ceramic is 1.8 x 10-5The fluororesin material has a thermal expansion coefficient of generally 8 to 12 x 10-5The difference between the coefficients of expansion is large at/° c, and when the package device experiences the above-mentioned large temperature changes of heating and cooling, the deformation of the package colloid 40 outside the metal boss 20 can be effectively reduced by the snap connection between the package colloid 40 and the metal boss 20, thereby preventing a gap from occurring between the package colloid 40 and the substrate 10.
In a preferred embodiment of the present invention, at least one metal bump 20 formed on the substrate 10 has the same thickness, and the thickness of the metal bump 20 (i.e. the isolation strip 203 and the die attach region 201 therein) is greater than or equal to 0.1 times the thickness of the encapsulant 40, the thickness of the metal bump 20 and the edge of the encapsulant 40 is less than or equal to 0.1mm, the distance from the edge of the metal bump 20 to the edge of the encapsulant 40 is less than or equal to 0.1mm, the width of the metal bump 20 is greater than or equal to 1/3 times the thickness of the encapsulant, and the width of the metal bump 20 refers to the width of the metal bump 20 in the direction perpendicular to the cutting direction (refer to the cutting direction F shown in fig. 4).
In another preferred embodiment of the present embodiment, as shown in fig. 5, forming a conductive portion 60 in the substrate 10 is further included, wherein the conductive portion 60 includes a positive conductive portion and a negative conductive portion respectively in conductive connection with the positive electrode and the negative electrode of the LED chip 30. The conductive portion 60 includes a conductive hole or the like penetrating the base 10.
Then, a pad 50 is formed on the lower surface of the substrate 10, and the pad 50 includes a positive pad and a negative pad which are electrically connected to the positive conductive portion and the negative conductive portion of the conductive portion 60, respectively. For example, in the structure shown in fig. 6, the conductive part 60 is electrically connected to the positive and negative electrodes of the LED chip through the isolation tape 203, and the pad 50 is electrically connected to the conductive part 60, so that the pad is electrically connected to the positive and negative electrodes of the LED chip.
Forming the bonding pads 50 on the lower surface of the substrate 10 as described above facilitates subsequent formation of the LED packaged device into a subsequent surface mount device. And for example, when the LED package device is soldered to a PCB (printed circuit board) by using a reflow soldering technique, the snap connection formed between the encapsulant 40 and the metal bumps 20 allows the encapsulant to be tightly adhered to the substrate, the metal bumps and the LED chips, and no defects such as bubbles are generated during the reflow soldering process, thereby improving the yield of the product in the later stage.
Example two
The present embodiment also provides a method for manufacturing an LED package device, which is the same as the first embodiment and will not be described again, except that:
in the present embodiment, when the metal bump 20a is formed, various pattern structures are formed in the isolation band 203a of the metal bump 20 a. As shown in fig. 7, a zigzag pattern 2031a is formed in the isolation belt 203 a. The sawtooth pattern 2031a may be inward sawtooth or outward sawtooth.
After the zigzag pattern is formed, the encapsulant is filled in the gaps formed by the zigzag pattern, so that the snap connection between the encapsulant and the metal boss 20a is enhanced, and the adhesion between the encapsulant and the metal boss 20a and the substrate 10 is enhanced.
In a preferred embodiment of this embodiment, as shown in fig. 8, a hollow pattern 2031b is formed in the isolation strip 203 b. The hollow pattern 2031b may be a rectangular hollow pattern, or a hollow pattern such as a diamond, an ellipse, or a circle.
In another preferred embodiment of this embodiment, as shown in fig. 9, when forming the metal boss 20c, in order to prevent the L-shaped region formed by the isolation strip 203c from being too large, a hollow pattern, for example, a circular and/or rectangular hollow pattern 2031c, is formed on one side of the L-shaped region.
After the hollow patterns are formed, the encapsulant is filled in the holes formed by the hollow patterns, so that the snap connection between the encapsulant and the metal boss 20b (or 20c) is enhanced, and the bonding between the encapsulant and the metal boss 20b (or 20c) and the substrate 10 is enhanced.
EXAMPLE III
The present embodiment also provides a method for manufacturing an LED package device, which is the same as that in the second embodiment and will not be described again, except that:
as shown in fig. 10, in the present embodiment, when the metal bump 20d is formed, the die bond region 201d and the isolation strip 203d also form a continuous structure, and there is no recessed region therebetween. The solid crystal region 201d and the isolation band 203d form two parts separated from each other as a whole, the two parts respectively include a positive solid crystal region 2011d and a negative solid crystal region 2012d, and a part of the isolation band 203d continuous with the positive solid crystal region 2011d can be used as a positive electrode region of the LED chip, and a part of the isolation band 203d continuous with the negative solid crystal region 2012d can be used as a negative electrode region of the LED chip.
In the present embodiment, the isolation strip 203d of the metal boss 20d is also formed with a hollow pattern, such as a rectangular hollow pattern 2031d shown in fig. 10. Of course, other patterns such as diamond, circle, oval, etc. may be included.
The packaging colloid is filled in the holes formed by the hollow patterns, so that the buckling connection between the packaging colloid and the metal boss 20d is enhanced, and the bonding between the packaging colloid and the metal boss 20d and the bonding between the packaging colloid and the substrate 10 are enhanced.
Example four
The present embodiment also provides a method for manufacturing an LED package device, which is the same as the first embodiment and will not be described again, except that:
as shown in fig. 11, the metal boss 20e also includes a solid crystal region 201e and an isolation strip 203e, in this embodiment, the isolation strip 203e forms a closed structure and is isolated from the solid crystal region 201e, and a recess region 204 is provided between the two and is isolated by the recess region 204. The isolation strip 203e may have a pattern structure, such as a rectangular hollow pattern 2031e shown in fig. 11, but hollow patterns with other shapes (such as a diamond shape, an oval shape, a circle, etc.) may also be formed. And may also be formed in a zigzag pattern or the like similar to that shown in fig. 7.
In this embodiment, since the die bond region 201e and the isolation strip 203e are separated from each other and are discontinuous in structure, they cannot form an electrically conductive structure, and thus, in this embodiment, the positive die bond region connected to the positive electrode of the LED chip forms the positive electrode region of the LED chip, and the negative die bond region connected to the negative electrode of the LED chip forms the negative electrode region of the LED chip.
In the method for manufacturing the packaged device according to this embodiment, the formed conductive part is communicated with the anode and the cathode of the LED chip through the die attach region 201e, and the pad is communicated with the conductive part, so as to communicate with the anode and the cathode of the LED chip.
EXAMPLE five
As shown in fig. 12, the present embodiment also provides a method for manufacturing an LED packaged device, which also includes the following steps:
a substrate 10 is provided, the substrate 10 comprising an upper surface and a lower surface, said substrate 10 being made of a material that is commonly used in the art, such as ceramic or silicon, preferably a ceramic substrate.
At least one metal boss 20f is formed on the upper surface of the substrate 10.
The LED chip 30f is disposed on the metal boss 20 f.
The same parts of this embodiment as those of the first to fourth embodiments are not described again, but the differences are:
in the present embodiment, the LED chip 30f is preferably a vertical LED chip, and in the present embodiment, when the metal projection 20f is formed, the die bond region 201f and the isolation strip 203f form a structure separated from each other, and have a recessed region 204 therebetween and are separated from each other by the recessed region 204. And the isolation strip 203f has a hollow pattern formed therein, such as a rectangular hollow pattern 2031f shown in fig. 12. Although other patterns (e.g., circles, diamonds, ovals, etc.) may be included.
As shown in fig. 12, the solid crystal region 201f also includes a positive solid crystal region 2011f and a negative solid crystal region 2012f, the vertical LED chip 30f of the present embodiment is disposed in the positive solid crystal region 2011f, and a part of the region on the 2011f side of the positive solid crystal region includes an extension portion, preferably, the extension portion extends from a region 1/2 smaller than the width of the solid crystal region on the 2011f side of the positive solid crystal region, for example, a region 1/2 smaller than the width of the positive solid crystal region 2011f on the left side of the side below the positive solid crystal region 2011f shown in fig. 12. The extended portion forms a positive electrode region 202f-P in contact with the positive electrode of the LED chip. As shown in fig. 12, the negative solid crystalline region 2012f is formed on the same side of the positive electrode region 202f-P and is adjacent to the positive electrode region 202f-P, and the negative solid crystalline region 2012f, the isolation strip 203f and the positive electrode region 202f-P are separated from each other to form an independent structure. A negative bonding wire 206f is formed between the negative surface of the LED chip 30f and the negative solid crystal region 2012f for electrically connecting the two, and at this time, the negative solid crystal region 2012f forms the negative electrode region 202f-N of the LED chip 30 f. Metal boss 20f also includes a protective device package region 205f formed in the positive electrode region 202f-P and negative electrode region 202 f-N.
As shown in fig. 12, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N and the space therebetween preferably does not exceed the width of the region where the LED chip is provided in the positive die bond region 2011 f.
As shown in fig. 13, in a preferred embodiment of the present embodiment, when the metal bump 20g is formed, the negative electrode region 202f-N shown in fig. 12 is not separately formed, but a negative bonding wire 206g for electrically connecting the negative electrode surface of the LED chip 30f and the isolation strip 203g is formed between the two, and at this time, the isolation strip 203g also serves as the negative electrode region 202g-N of the LED chip 30 f. And a protective device package region 205g is formed in the positive electrode region 202g-P and the isolation band 203 g. Also, a hollow pattern 2031g, such as a rectangular hollow pattern 2031g shown in fig. 13, is formed in the isolation band 203 g. Although other patterns (e.g., circles, diamonds, ovals, etc.) may be included.
The encapsulant is filled in the holes formed by the hollow patterns, so that the snap connection between the encapsulant and the metal boss 20f (or 20g) is enhanced, and the adhesion between the encapsulant and the metal boss 20f (or 20g) and the substrate 10 is enhanced.
EXAMPLE six
The present embodiment also provides a method for manufacturing an LED package device, which is the same as the first to fifth embodiments and will not be repeated herein, except that:
the manufacturing method of the embodiment further includes cutting the packaged device. The packaged device is diced in units of a single light emitter along a cutting direction F shown in fig. 4 in an intermediate position of the first interval 101 shown in fig. 2, resulting in a single light emitter device shown in fig. 14.
Because the above-mentioned buckle connection is formed between the packaging colloid 40 and the metal boss 20, the above-mentioned buckle connection can play a role of blocking during cutting, effectively reduces the deformation amount of the bottom of the packaging colloid, ensures that the packaging colloid near the die bonding area of the metal boss is tightly combined with the substrate, and cannot be peeled off from the substrate due to cutting stress.
EXAMPLE seven
The present embodiment provides an LED packaged device, referring again to fig. 4 and 5, comprising:
the substrate 10, including the upper surface and the lower surface, may be made of a material commonly used in the art, such as ceramic or silicon, and is preferably a ceramic substrate.
At least one metal bump 20 disposed on the upper surface of the substrate 10, for example, the metal bump 20 may be a metal plating layer formed on a ceramic substrate by a sputtering process in combination with an electroplating or electroless plating process, and the metal plating layer may be a copper plating layer. As shown in fig. 2, the metal bosses 20 have a first interval 101 therebetween, that is, the metal bosses are arranged at intervals of a first interval L1.
And the LED chip 30 is arranged on the metal boss 20, and in the embodiment, the LED chip is a flip-chip LED chip.
Referring to fig. 6, a schematic view of the structure of the circled portion in fig. 3 along the a-a direction is shown. As can be seen from fig. 6, the metal boss 20 includes a solid crystal region 201 in the middle for disposing the LED chip 30, the solid crystal region 201 includes a positive solid crystal region 2011 and a negative solid crystal region 2012 which are disposed oppositely (the positions of the positive solid crystal region 2011 and the negative solid crystal region 2012 are not necessarily the positive solid crystal region 2011 on the right side and the negative solid crystal region 2012 on the left side in the drawing, the polarity of the solid crystal region is determined by the positive and negative electrodes of the LED chip disposed upside down, and the positions of the positive solid crystal region and the negative solid crystal region in the drawing are defined only for convenience of description), the LED chip is upside down, and the positive electrode and the negative electrode of the LED chip are connected with the positive solid crystal region 2011 and the negative solid crystal region 2012 respectively. As shown in fig. 6, a second interval 102 is provided between the positive solid crystal region 2011 and the negative solid crystal region 2012, i.e. a second distance L is provided between the positive solid crystal region 2011 and the negative solid crystal region 20122. The second spacing L2 and the first spacing L between the metal bosses 20 shown in FIG. 21May be determined based on the actual size of the LED chip and the dimensional requirements of the packaged device to be formed.
Still referring to fig. 6, an isolation strip 203 is formed at the edge portion of the metal boss 20, a recessed region 204 exists between the isolation strip 203 and the solid crystal region 201, the thickness of the recessed region is smaller than the thickness of the isolation strip 203 and the thickness of the solid crystal region 201, and the thicknesses of the isolation strip 203 and the solid crystal region 201 are equal. Preferably, the height/width of the recessed region 204 is greater than or equal to 1/2, wherein the height of the recessed region 204 is equal to the height of the metal boss.
As shown in fig. 6, the isolation zone 203 in this embodiment can be regarded as two separate structures, each of which has a structure similar to an L shape, and one portion of the isolation zone 203 and the positive solid crystal region 2011 form a continuous structure, and the other portion and the negative solid crystal region 2012 form a continuous structure. Because the positive electrode die bonding area 2011 and the negative electrode die bonding area 2012 are respectively communicated with the positive electrode and the negative electrode of the LED chip, and two parts of the isolation strip respectively form a continuous structure in the positive electrode die bonding area 2011 and the negative electrode die bonding area 2012, the isolation strip 203 can be used as the electrode area 202 of the LED chip, the isolation strip part continuous with the positive electrode die bonding area 2011 forms the positive electrode area of the LED chip, and the isolation strip part continuous with the negative electrode die bonding area 2012 forms the negative electrode area of the LED chip.
In this embodiment, a metal thin layer may be formed on the substrate 10 by an ion sputtering process, and then the metal bump 20 of this embodiment may be formed by an electroplating or chemical plating process.
Referring also to fig. 6, in a preferred embodiment of the present invention, an electrostatic protection device (Zener) packaging region 205 is formed on one side of the isolation strip 203 of the metal boss 20, and the protection device is packaged in the protection device packaging region 205 to protect the whole LED package device, for example, the electrostatic protection device packaging region 205 may be formed at an angular position on one side of the isolation strip.
Then, as shown in fig. 4, the encapsulant 40 covers the LED chip 30, the metal bumps 20, and the substrate 10, and in a preferred embodiment of the present embodiment, the encapsulant 40 is preferably a fluororesin material. The LED package covered with the encapsulant 40 is heated, for example, by solution baking or hot pressing, so that the encapsulant 40 fills the first space 101 between the metal bumps 20, the second space 102 in the die bonding region 201 inside the metal bumps, the recess 204 between the isolation tape and the die bonding region, and the gap between the two portions of the isolation tape 203. After the heating process, the encapsulant forms good contact with the LED chip 30, the metal bumps 20, and the substrate. Then it is right the packaging body cools off, and the packaging colloid adhesion is on LED chip 30, metal boss 20 and base plate 10 to the packaging colloid can form the buckle connection because of having filled above-mentioned metal boss depressed area, gap etc. and between the metal boss 20, this buckle connection can increase the adhesive force of packaging colloid, effectively prevents that the packaging body from appearing the packaging colloid vibrations in transportation or transfer process and droing scheduling problem.
In addition, the expansion coefficient of the ceramic is 1.8 x 10-5The fluororesin material generally has a thermal expansion coefficient of 8 to 12 x 10-5The difference between the coefficients of expansion is large at/° c, and when the package device experiences the above-mentioned large temperature changes of heating and cooling, the deformation of the package colloid 40 outside the metal boss 20 can be effectively reduced by the snap connection between the package colloid 40 and the metal boss 20, thereby preventing a gap from occurring between the package colloid 40 and the substrate 10.
In the preferred embodiment of the present embodiment, the metal bumps 20 have the same thickness, and the thickness of the metal bumps 20 is greater than or equal to 0.1 times the thickness of the encapsulant 40, the thickness of the edges of the metal bumps 20 and the encapsulant 40 is less than or equal to 0.1mm, the distance from the edge of the metal bumps 20 to the edge of the encapsulant 40 is less than or equal to 0.1mm, the width of the metal bumps 20 is greater than or equal to 1/3 of the thickness of the encapsulant, and the width of the metal bumps 20 refers to the width of the metal bumps 20 in the direction perpendicular to the cutting direction (refer to the cutting direction F shown in fig. 4).
In another preferred embodiment of the present embodiment, as shown in fig. 5, the substrate 10 of the LED package device further includes a conductive part 60, and the conductive part 60 includes a positive conductive part and a negative conductive part corresponding to the positive electrode region and the negative electrode region, respectively. The conductive portion 60 includes a conductive hole or the like penetrating the base 10.
And a pad 50 formed on the lower surface of the substrate 10, wherein the pad 50 includes a positive pad and a negative pad which are respectively electrically connected to the positive conductive part and the negative conductive part of the conductive part 60. For example, in the structure shown in fig. 6, the conductive part 60 is electrically connected to the positive and negative electrodes of the LED chip through the isolation tape 203, and the pad 50 is electrically connected to the conductive part 60, so that the pad is electrically connected to the positive and negative electrodes of the LED chip.
The pads 50 formed on the lower surface of the substrate 10 as described above facilitate the subsequent formation of the LED packaged device into a subsequent surface mount device. And for example, when the LED package device is soldered to a PCB (printed circuit board) by using a reflow soldering technique, the snap connection formed between the encapsulant 40 and the metal bumps 20 allows the encapsulant to be tightly adhered to the substrate, the metal bumps and the LED chips, and no defects such as bubbles are generated during the reflow soldering process, thereby improving the yield of the product in the later stage.
Example eight
The present embodiment provides an LED package device, and the same parts as those in the fifth embodiment are not repeated, except that:
in this embodiment, the isolation strips 203a of the metal bosses 20a have various pattern structures therein. As shown in fig. 7, the release tape 203a includes a zigzag pattern 2031 a. The sawtooth pattern 2031a may be inward sawtooth or outward sawtooth.
After the zigzag pattern is formed, the encapsulant is filled in the gaps formed by the zigzag pattern, so that the snap connection between the encapsulant and the metal boss 20a is enhanced, and the adhesion between the encapsulant and the metal boss 20a and the substrate 10 is enhanced.
In a preferred embodiment of this embodiment, as shown in fig. 8, the isolation strip 203b includes a hollow pattern 2031 b. The hollow pattern 2031b may be a rectangular hollow pattern, or a hollow pattern such as a diamond, an ellipse, or a circle.
In the present embodiment, as shown in fig. 9, in order to prevent the L-shaped area of the isolation strip 203c of the metal boss 20c from being too large, a hollow pattern, for example, a circular and/or rectangular hollow pattern 2031c, is included on one side of the L-shaped area.
After the hollow patterns are formed, the packaging colloid is filled in the holes formed by the hollow patterns, so that the buckling connection between the packaging colloid and the metal boss 20b is enhanced, and the bonding between the packaging colloid and the metal boss 20b and the bonding between the packaging colloid and the substrate 10 are enhanced.
Example nine
As shown in fig. 10, in the present embodiment, the die bond region 201d of the metal bump 20d and the isolation strip 203d also include a continuous structure, and there is no recessed region therebetween. The solid crystal region 201d and the isolation band 203d form two parts separated from each other as a whole, the two parts respectively include a positive solid crystal region 2011d and a negative solid crystal region 2012d, and a part of the isolation band 203d continuous with the positive solid crystal region 2011d can be used as a positive electrode region of the LED chip, and a part of the isolation band 203d continuous with the negative solid crystal region 2012d can be used as a negative electrode region of the LED chip.
In the present embodiment, the isolation strip 203d of the metal boss 20d is also formed with a hollow pattern, such as a rectangular hollow pattern 2031d shown in fig. 10. Of course, other patterns such as diamond, circle, oval, etc. may be included.
The packaging colloid is filled in the holes formed by the hollow patterns, so that the buckling connection between the packaging colloid and the metal boss 20d is enhanced, and the bonding between the packaging colloid and the metal boss 20d and the bonding between the packaging colloid and the substrate 10 are enhanced.
Example ten
The present embodiment also provides an LED package device, and the same parts as those in the fifth embodiment are not repeated, except that:
as shown in fig. 11, the metal boss 20e also includes a solid crystal region 201e and an isolation strip 203e, in this embodiment, the isolation strip 203e is a closed structure and isolated from the solid crystal region 201e by a recess 204. The isolation strip 203e may include a pattern structure, such as a rectangular hollow pattern 2031e shown in fig. 11, but may also include hollow patterns with other shapes (such as diamond, oval, circle, etc.). And may also include a sawtooth pattern or the like similar to that shown in fig. 7.
In this embodiment, since the die bond region 201e and the isolation strip 203e are separated from each other and are discontinuous in structure, they cannot form a conduction structure, and therefore, in this embodiment, the positive die bond region connected to the positive electrode of the LED chip forms the positive electrode region of the LED chip, and the negative die bond region connected to the negative electrode of the LED chip forms the negative electrode region of the LED chip.
In the package device described in this embodiment, the conductive part is communicated with the anode and the cathode of the LED chip through the die attach region 201e, and the pad is communicated with the conductive part, so as to communicate with the anode and the cathode of the LED chip.
EXAMPLE eleven
The present embodiment also provides an LED package device, also including:
as shown in fig. 12, a substrate 10 is provided, the substrate 10 includes an upper surface and a lower surface, and the substrate 10 may be made of a material commonly used in the art, such as ceramic or silicon, and is preferably a ceramic substrate.
At least one metal boss 20f formed on the upper surface of the substrate 10.
And an LED chip 30f disposed on the metal boss 20 f.
The parts of this embodiment that are the same as those of the seventh to tenth embodiments are not described again, but the differences are:
in the present embodiment, the LED chip 30f is preferably a vertical LED chip, and in the present embodiment, the die bonding region 201f of the metal boss 20f and the isolation strip 203f form a structure separated from each other, and have a recessed region 204 therebetween and are isolated from each other by the recessed region 204. And the isolation band 203f includes a hollow pattern, such as the rectangular hollow pattern 2031f shown in fig. 12. Although other patterns (e.g., circles, diamonds, ovals, etc.) may be included.
As shown in fig. 12, the solid crystal region 201f also includes a positive solid crystal region 2011f and a negative solid crystal region 2012f, the vertical LED chip 30f of the present embodiment is disposed in the positive solid crystal region 2011f, and a part of a region on one side of the positive solid crystal region 2011f includes an extension portion, preferably, the extension portion extends from a region 1/2 smaller than the width of the solid crystal region on one side of the positive solid crystal region 2011f, for example, a region 1/2 smaller than the width of the positive solid crystal region 2011f on the left side on the lower side of the positive solid crystal region 2011f, which is illustrated in fig. 12, extends downward. The extended portion forms a positive electrode region 202f-P in contact with the positive electrode of the LED chip. As shown in fig. 12, the negative solid crystalline region 2012f is formed on the same side of the positive electrode region 202f-P and is adjacent to the positive electrode region 202f-P, and the negative solid crystalline region 2012f, the isolation strip 203f and the positive electrode region 202f-P are separated from each other to form an independent structure. A negative bonding wire 206f is formed between the negative surface of the LED chip 30f and the negative solid crystal region 2012f for electrically connecting the two, and at this time, the negative solid crystal region 2012f forms the negative electrode region 202f-N of the LED chip 30 f. Metal boss 20f also includes a protective device package region 205f formed in the positive electrode region 202f-P and negative electrode region 202 f-N.
As shown in fig. 12, the total width of the positive electrode region 202f-P, the negative electrode region 202f-N and the space therebetween preferably does not exceed the width of the region where the LED chip is provided in the positive die bond region 2011 f.
As shown in fig. 13, in a preferred embodiment of the present embodiment, when the metal bump 20g is formed, the negative electrode region 202f-N shown in fig. 12 is not separately formed, but a negative bonding wire 206g for electrically connecting the negative electrode surface of the LED chip 30f and the isolation strip 203g is formed between the two, and at this time, the isolation strip 203g also serves as the negative electrode region 202g-N of the LED chip 30 f. And a protective device package region 205g is formed in the positive electrode region 202g-P and the isolation band 203 g. Also, a hollow pattern 2031g, such as a rectangular hollow pattern 2031g shown in fig. 13, is formed in the isolation band 203 g. Although other patterns (e.g., circles, diamonds, ovals, etc.) may be included.
The encapsulant is filled in the holes formed by the hollow patterns, so that the snap connection between the encapsulant and the metal boss 20f (or 20g) is enhanced, and the adhesion between the encapsulant and the metal boss 20f (or 20g) and the substrate 10 is enhanced.
Example twelve
This embodiment also provides an LED package device, and the same parts as those in the eleventh embodiment are not described again, except that:
the packaged device of the present embodiment includes a single light emitter device shown in fig. 14, which includes a single light emitter cut out from the packaged device along a cutting direction F shown in fig. 4 at an intermediate position of the first space 101 shown in fig. 2. Because the snap connection is formed between the encapsulant 40 and the metal boss 20, the encapsulant is not easy to fall off or peel off during the use of the package device.
As described above, the LED package device and the method for manufacturing the same of the present invention at least have the following advantages:
according to the method, the pattern is formed in the metal boss, the packaging colloid covers the LED chip, the metal boss and the substrate, and meanwhile, gaps among the metal bosses and gaps or holes formed by the pattern in the metal boss are filled, so that the packaging colloid is connected with the metal boss in a buckling mode. The adhesive force of the packaging colloid is increased, and the problems that the packaging colloid shakes and falls off in the transportation or transmission process of the packaging body are effectively prevented.
Due to the tight adhesion among the packaging colloid, the LED chip, the metal lug boss and the substrate, the defects of reflow soldering bubbles and the like when a bonding pad is formed on the lower surface of the substrate through reflow soldering are effectively avoided, and the yield of subsequent products is ensured.
When the cutting, above-mentioned buckle between encapsulation colloid and the metal boss is connected and can be played the effect that blocks, effectively reduces the deformation volume of encapsulation colloid bottom, guarantees to be close to the encapsulation colloid and the base plate of the solid crystalline region of metal boss and closely combines, can not peel off from the base plate because of the cutting atress.
When the packaging body experiences larger temperature change, although the difference between the thermal expansion coefficients of the ceramic substrate and the fluororesin packaging colloid is larger, the packaging colloid and the metal boss can form buckle connection, so that the deformation of the packaging colloid outside the metal boss can be effectively reduced, and the gap between the packaging colloid and the substrate is avoided.
In addition, the preparation method of the LED packaging device is simple in process and good in packaging effect, and is beneficial to reducing the packaging cost and increasing the economic benefit.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (33)
1. An LED package device, comprising:
a substrate comprising an upper surface and a lower surface, the substrate being ceramic or silicon;
the substrate comprises a substrate and at least one metal boss arranged on the upper surface of the substrate, wherein when the upper surface of the substrate is provided with a plurality of metal bosses, a first interval is formed between the metal bosses, each metal boss comprises a die bonding area and an isolation belt, the die bonding area is positioned in the middle of each metal boss, the isolation belts are positioned at the edge parts of the metal bosses, and a recessed area is formed between each isolation belt and the die bonding area;
the LED chip is arranged on the die bonding area of the metal boss;
the packaging colloid covers the LED chip, the metal boss and the substrate, is fluororesin and has a difference in thermal expansion coefficient with the substrate;
the isolation belt of the metal boss is provided with a pattern structure, and the packaging colloid is connected with the metal boss with the pattern structure in a buckling mode.
2. The LED packaged device of claim 1, wherein said metal boss comprises a metal plating formed on said substrate.
3. The LED package device of claim 1, wherein the thickness of the metal boss is greater than or equal to 0.1 times the thickness of the encapsulant.
4. The LED packaged device of claim 1, wherein the edge of said metal boss is less than or equal to 0.1mm from the edge of said encapsulant.
5. The LED package device of claim 1, wherein the width of the metal bumps is greater than or equal to 1/3 of the thickness of the encapsulant, wherein the width of the metal bumps refers to the width of the metal bumps in the direction perpendicular to the cutting direction.
6. The LED package device of claim 1, wherein the die attach region comprises an anode die attach region and a cathode die attach region that are opposite and spaced apart from each other by a second distance, wherein the anode die attach region is connected to an anode of the LED chip, and the cathode die attach region is connected to a cathode of the LED chip.
7. The LED package device of claim 1, wherein the die attach region and the isolation strip have the same thickness.
8. The LED packaged device according to claim 1, wherein said isolation strip comprises a closed structure and is separated from said die attach region.
9. The LED packaged device of claim 1, wherein said isolation strip forms a first portion and a second portion that are spaced apart from each other, and said first portion and said second portion comprise an L-shaped structure.
10. The LED package device of claim 1, wherein the pattern structure of the isolation strip comprises a saw-tooth pattern or a hollowed-out pattern, wherein the saw-tooth pattern comprises inward saw teeth or outward saw teeth along a circumference of the isolation strip.
11. The LED packaged device as recited in claim 10, wherein said metal boss has four edges, said isolation strips are located at the four edges of said metal boss, and said isolation strips located at the four edges of said metal boss each have said pattern structure.
12. The LED package device of claim 11, wherein the encapsulant is solution baked or hot pressed to fill the gaps between each pair of metal bumps and to fill the patterned holes or gaps to form the snap connection.
13. The LED packaged device of claim 1, wherein said isolation strip further comprises a protective device encapsulation region on one side of said isolation strip.
14. The LED packaged device of claim 1, wherein said recessed region has a height/width ratio greater than or equal to 1/2.
15. The LED package device of claim 1, wherein the recessed region has a thickness less than the thickness of the isolation strip and/or the recessed region has a thickness less than the thickness of the die attach region.
16. The LED packaged device of claim 1, wherein said substrate comprises:
a conductive portion in the substrate and penetrating the substrate, the conductive portion including a positive conductive portion and a negative conductive portion respectively conductive with a positive electrode and a negative electrode of the LED chip; and
and the bonding pad is positioned on the lower surface of the substrate and comprises a positive bonding pad and a negative bonding pad which are respectively conducted with the positive conductive part and the negative conductive part.
17. The LED packaged device of claim 1 further comprising individual light emitting devices cut from said packaged device along intermediate positions of said first space.
18. A method for manufacturing an LED packaging device is characterized by comprising the following steps:
providing a substrate, wherein the substrate is provided with an upper surface and a lower surface and is made of ceramic or silicon;
forming at least one metal boss on the upper surface of the substrate, wherein when the upper surface of the substrate is provided with a plurality of metal bosses, a first interval is formed between the metal bosses, each metal boss comprises a die bonding area and an isolation strip, the die bonding area is formed in the middle of each metal boss, the isolation strip is positioned at the edge part of each metal boss, and a recessed area is formed between each die bonding area and each isolation strip;
arranging an LED chip on the die bonding area of the metal boss;
covering the LED chip, the metal boss and the substrate with a packaging colloid, wherein the packaging colloid is fluororesin and has a difference of thermal expansion coefficient with the substrate;
the isolation belt of the metal boss is provided with a pattern structure, and the packaging colloid is connected with the metal boss with the pattern structure in a buckling mode.
19. The method of manufacturing of claim 18, wherein forming at least one of the metal bosses on the upper surface of the substrate comprises:
manufacturing a mask plate with the pattern structure, and attaching the mask plate to the upper surface of the substrate;
performing metal layer plating treatment on the upper surface of the substrate attached with the mask plate, and forming a metal film with the pattern structure on the upper surface of the substrate;
and continuing to plate the metal layer on the metal film to increase the thickness of the metal film until the metal boss is formed.
20. The method of claim 18, wherein the metal bumps have a thickness equal to or greater than 0.1 times the thickness of the encapsulant.
21. The method of claim 18, wherein the edge of the metal boss is spaced from the edge of the molding compound by a distance of 0.1mm or less.
22. The method of claim 18, wherein the width of the metal bump is greater than or equal to 1/3 of the encapsulant thickness, wherein the width of the metal bump is the width of the metal bump in the direction perpendicular to the cutting direction.
23. The method of claim 18, wherein the die attach region comprises an anode die attach region and a cathode die attach region opposite to each other and spaced apart from each other by a second distance, wherein the anode die attach region is connected to an anode of the LED chip, and the cathode die attach region is connected to a cathode of the LED chip.
24. The method of claim 18, wherein the thickness of the solid crystal region and the isolation strip are the same.
25. The method of manufacturing according to claim 18, wherein the isolation strip forms a closed structure and is separated from the solid crystal region.
26. The method of manufacturing of claim 18, wherein the isolation strip forms first and second portions that are spaced apart from each other, and the first and second portions comprise L-shaped structures.
27. The method of manufacturing according to claim 18, wherein the pattern structure of the release tape comprises a zigzag pattern or an engraved pattern, wherein the zigzag pattern comprises inward serrations or outward serrations in a circumferential direction of the release tape.
28. The method of claim 27, wherein the step of covering the LED chip, the metal bumps and the substrate with an encapsulant further comprises solution baking or hot pressing the encapsulant, and the encapsulant fills the first spaces between the metal bumps and the holes or gaps formed by the pattern structure to form the snap connection.
29. The method of manufacturing of claim 18, further comprising forming an electrostatic protection device package region on one side of the isolation strip.
30. The method of manufacturing of claim 18, wherein the height/width of the recessed region is greater than or equal to 1/2.
31. The manufacturing method according to claim 18, wherein the thickness of the recessed region is smaller than the thickness of the isolation zone and/or the thickness of the recessed region is smaller than the thickness of the solid crystal region.
32. The method of manufacturing of claim 18, further comprising the steps of:
forming a conductive part penetrating through the substrate in the substrate, wherein the conductive part comprises a positive conductive part and a negative conductive part which are respectively conducted with a positive electrode and a negative electrode of the LED chip;
and forming a pad on the lower surface of the substrate, wherein the pad comprises a positive pad and a negative pad which are respectively conducted with the positive conductive part and the negative conductive part.
33. The method of manufacturing according to claim 18, further comprising dicing the packaged device, wherein the packaged device is diced in units of individual light emitters at intermediate positions of the first interval.
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| CN202110323687.2A CN112864296B (en) | 2019-01-29 | 2019-01-29 | LED packaging device |
| CN201910086438.9A CN109830589B (en) | 2019-01-29 | 2019-01-29 | LED packaging device and manufacturing method thereof |
| CN202110323833.1A CN112864297B (en) | 2019-01-29 | 2019-01-29 | LED packaging device |
| TW109102220A TWI740359B (en) | 2019-01-29 | 2020-01-21 | Light emitting diode packaging device and manufacturing method thereof |
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| TW202032819A (en) | 2020-09-01 |
| CN112864297B (en) | 2022-06-28 |
| CN112864296A (en) | 2021-05-28 |
| CN109830589A (en) | 2019-05-31 |
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| CN112864296B (en) | 2022-06-28 |
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