TWI739821B - 半導體封裝結構及其製造方法 - Google Patents

半導體封裝結構及其製造方法 Download PDF

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TWI739821B
TWI739821B TW106111706A TW106111706A TWI739821B TW I739821 B TWI739821 B TW I739821B TW 106111706 A TW106111706 A TW 106111706A TW 106111706 A TW106111706 A TW 106111706A TW I739821 B TWI739821 B TW I739821B
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redistribution layer
layer
chip
redistribution
electrically connected
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TW106111706A
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TW201813023A (zh
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洪瑞斌
許峰誠
陳碩懋
鄭心圃
廖德堆
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台灣積體電路製造股份有限公司
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Abstract

一種半導體封裝結構包含一重佈層(RDL)、一晶片、複數個互連凸塊及一囊封物。該重佈層具有彼此相對之一第一表面及一第二表面。該晶片在複數個接點墊面對該第一表面之情況下放置在該重佈層上方且電連接至該重佈層。該等互連凸塊放置在該第一表面上方且電連接至該重佈層。該囊封物放置在該重佈層之該第一表面上方，且該囊封物封圍該晶片並環繞該等互連凸塊之側向壁。

Description

半導體封裝結構及其製造方法
本揭露係關於一種半導體封裝結構及其製造方法。
一半導體封裝結構包含複數個主動及被動裝置晶片。諸如雙極及場效電晶體之主動裝置經組態以控制電流之流動。諸如電阻器、電容器及電感器之被動裝置用於建立執行各種電功能所必需之電壓與電流之間的一關係。被動裝置與主動裝置經電連接以形成使得半導體裝置能夠執行高速計算及其他有用功能之電路。 隨著半導體技術之演變，半導體裝置變得愈來愈小。同時，更多功能需要整合至半導體裝置中。相應地，半導體裝置需要具有包裝至較小區域中之愈來愈大數目個I/O接點墊，且I/O接點墊之密度隨時間迅速上升。作為一結果，半導體裝置之封裝變得更困難，此不利地影響封裝之良率。
在一項例示性態樣中，一種半導體封裝結構包含一重佈層(RDL)、一晶片、複數個互連凸塊及一囊封物。該重佈層具有彼此相對之一第一表面及一第二表面。該晶片在複數個接點墊面對該第一表面之情況下放置在該重佈層上方且電連接至該重佈層。該等互連凸塊放置在該第一表面上方且電連接至該重佈層。該囊封物放置在該重佈層之該第一表面上方，且該囊封物封圍該晶片且環繞該等互連凸塊之側向壁。 在另一例示性態樣中，一種半導體封裝結構包含一第一重佈層、一第一晶片、複數個第一互連凸塊、一第一囊封物、一第二重佈層、一第二晶片、複數個第二互連凸塊及一第二囊封物。該第一重佈層具有彼此相對之一第一表面及一第二表面。該第一晶片在複數個接點墊面對該第一表面之情況下放置在該第一重佈層上方且電連接至該第一重佈層。該等第一互連凸塊放置在該第一表面上方且電連接至該第一重佈層。該第一囊封物放置在該第一重佈層之該第一表面上方。該第一囊封物封圍該第一晶片且環繞該等第一互連凸塊之側向壁。該第二重佈層在該第一重佈層之該第二表面上方。該第二重佈層具有彼此相對之一第三表面及一第四表面，且該第三表面面對該第二表面。該第二晶片在複數個接點墊面對該第三表面之情況下放置在該第二重佈層上方。該等第二互連凸塊放置在該第三表面上方且電連接至該第二重佈層。該第二囊封物放置在該第一重佈層與該第二重佈層之間，且該第二囊封物封圍該第二晶片且環繞該等第二互連凸塊之側向壁。 在又一態樣中，一種用於製造一半導體封裝結構之方法包含：在一第一載體基板上方形成一第一重佈層；在該第一重佈層上方放置複數個第一晶片；利用複數個第一互連凸塊將複數個封裝電連接至該第一重佈層；及在該等封裝與該第一重佈層之間形成一第一囊封物。
本申請案主張在2016年7月25日提出申請之美國臨時申請案第62/366,295號之優先權，該美國臨時申請案之全部內容以引用方式併入本文中。 以下揭露提供用於實施所提供標的物之不同構件之諸多不同實施例或實例。下文闡述元件及配置之具體實例以簡化本揭露。當然，存在僅實例且不意欲為限制性。舉例而言，在以下說明中，一第一構件形成於一第二構件上方或上可包含其中第一構件及第二構件形成為直接接觸之實施例，且亦可包含其中額外構件可形成於第一構件與第二構件之間使得第一構件及第二構件可不直接接觸之實施例。另外，本揭露可在各種實例中重複元件符號及/或字母。此重複係為了簡單及清晰目的且其本身不指出所論述之各種實施例及/或組態之間的一關係。 進一步地，為了說明方便，本文中可使用空間相對術語(諸如，「在…下面」、「在…下方」、「下部」、「在…上面」、「上部」、「在…上」及諸如此類)來闡述一個元件或構件與另一(些)元件或構件之關係，如各圖中所圖解說明。該等空間相對術語意欲囊括除各圖中所繪示之定向之外的裝置在使用或操作中之不同定向。設備可以其他方式經定向(旋轉90度或處於其他定向)且相應地可同樣地解釋本文中所使用之空間相對敘述語。 如本文中所使用，諸如「第一」、「第二」及「第三」之術語闡述各種元件、組件、區域、層及/或區段，此等元件、組件、區域、層及/或區段不應受此等術語限制。此等術語可僅用於將元件、組件、區域、層或區段彼此區分開。諸如「第一」、「第二」及「第三」之術語在用於本文中時不暗示一順序或次序，除非內容脈絡清晰指示。 如本文中所使用，術語「載體基板」或「暫時基板」係指組態為用於諸如重佈層、晶片、囊封物及其他結構之上覆層之製作便利或用於進行切塊之一中間基板之一載體。該載體基板或該暫時基板提供暫時支撐及固定功能，且將自上覆結構經移除。 如本文中所使用，術語「被動裝置」係指包含電阻器、電容器、電感器或其一組合之裝置。 如本文中所使用，術語「重佈層(RDL)」係指由至少一個導電圖案及至少一個絕緣層形成之一層堆疊，且經組態以與兩個或兩個以上裝置電通信。 如本文中所使用，術語「互連凸塊」係指經組態以使兩個導電結構透過其兩端電互連之一導體。在一或多項實施例中，該互連凸塊由可藉由低溫操作形成之一低熔點材料形成。在形成環繞該互連凸塊之側壁之囊封物之前形成該互連凸塊。在一或多項實施例中，該互連凸塊係一焊料凸塊、一焊料膏或諸如此類。 在本揭露之某些實施例中，半導體封裝結構包含兩個或兩個以上重佈層，且此等RDL替代穿透一基板之通孔結構而透過焊料球或焊料膏連同嵌入於一囊封物中之導電柱互連。晶片能夠嵌入於該囊封物中，此降低半導體封裝結構之總體高度，且允許具有相異厚度之晶片放置在同一水平。 圖1係圖解說明根據本揭露之各種態樣之用於製造一半導體封裝結構之一方法之一流程圖。方法100以操作110開始，其中在一第一載體基板上方形成一第一重佈層。方法100以操作120繼續，其中在該第一重佈層上方放置複數個第一晶片。方法100以操作130繼續進行，其中將複數個封裝與複數個第一互連凸塊電連接至該第一重佈層。方法100以操作140繼續進行，其中在該等封裝與該第一重佈層之間形成一第一囊封物。 方法100僅僅係一實例，且不意欲限制本揭露(除申請專利範圍中明確陳述之內容之外)。可在方法100之前、期間及之後提供額外操作，且可替換、刪去或四處移動所闡述之某些操作以用於方法之額外實施例。 圖2A、圖2B、圖2C、圖2D、圖2E、圖2F、圖2G、圖2H及圖2I係在根據本揭露之一或多項實施例之製造半導體封裝結構之各種操作中之一者時之剖面圖。如圖2A中所繪示，一第一重佈層20形成於一第一載體基板10上方。第一載體基板10組態為用於形成第一重佈層20之一暫時載體，且隨後將被移除。在一或多項實施例中，第一載體基板10係諸如一玻璃基板之一絕緣基板。第一載體基板10可包含諸如一矽基板之一半導體基板、諸如一金屬基板之一導電基板或其他適合基板。第一重佈層20具有彼此相對之一第一表面201及一第二表面202。在某些實施例中，第一重佈層20之第二表面202面對第一載體基板10。第一重佈層20由至少一個導電層及至少一個絕緣層形成，且經組態以與兩個或兩個以上裝置電通信。在一或多項實施例中，第一重佈層20包含三個導電層22、24、26及環繞導電層22、24、26之至少一個絕緣層28。在某些實施例中，導電層22、24、26包含不同圖案，且某些部分電連接。在某些實施例中，導電層22自第二表面202暴露，且導電層26自第一表面201暴露。在某些實施例中，第一重佈層20藉由執行數個沈積操作、光微影操作及蝕刻操作而形成。在某些實施例中，導電層22、24、26之材料包含諸如銅、鈦、類似物或其一組合之金屬。至少一個絕緣層28之材料可包含無機及/或有機絕緣材料。 如圖2B中所繪示，數個第一晶片30放置在第一重佈層20上方。在一或多項實施例中，第一晶片30包含主動裝置晶片及/或被動裝置晶片。以實例方式，主動裝置晶片可包含系統單晶片(SOC)、諸如一DRAM晶片之記憶體晶片及/或其他晶片。被動裝置晶片可包含形成於其中之電阻器、電容器、電感器或其一組合。在某些實施例中，被動裝置晶片可呈積體電路之形式，但並不限於此。第一晶片30可透過表面安裝技術(SMT)或其他適合接合技術安裝在第一重佈層20上。在某些實施例中，第一晶片30中之每一者包含複數個接點墊30P，且第一晶片30藉由如下方式電連接至第一重佈層20：透過諸如焊料膏、焊料凸塊或其他適合導電材料之導電材料34將接點墊30P接合至第一重佈層20之經暴露導電層26。在一或多項實施例中，主動裝置晶片及被動裝置晶片透過第一重佈層20彼此電通信。在某些實施例中，不同第一晶片30之厚度可係相異的。舉例而言，主動裝置晶片及被動裝置晶片之厚度可不同。 如圖2C中所繪示，複數個封裝40放置在第一重佈層20上方且利用複數個第一互連凸塊36電連接至第一重佈層20。在一或多項實施例中，封裝40係包含封裝有經暴露外部端子之一或多個晶片之一預成型結構。在一或多項實施例中，封裝40係諸如一快閃記憶體裝置封裝之一記憶體裝置封裝，但並不限於此。在一或多項實施例中，第一互連凸塊36係一焊料球，其中該焊料球之一個端子電連接至封裝40之外部端子，且該焊料球之另一端子電連接至第一重佈層20之經暴露導電層26。第一互連凸塊36可包含其他類型之導體。 如圖2D中所繪示，一第一囊封物38形成於封裝40與第一重佈層20之間。在一或多項實施例中，第一囊封物38之材料係一模塑料。在某些實施例中，一底膠填充層可形成於第一晶片30與第一重佈層20之間。在某些實施例中，第一囊封物38係一成型底膠填充(MUF)層且因此不需要一額外底膠填充層。在一或多項實施例中，焊料球之兩個相對端子自第一囊封物38暴露以分別電連接至封裝40及第一重佈層20。在某些實施例中，第一囊封物38覆蓋第一晶片30之一上表面。 如圖2E中所繪示，封裝40附接至一暫時基板42。在一或多項實施例中，暫時基板42係一撓性膜，諸如固定在一框架44上之一膠帶。在某些實施例中，暫時基板42可包含其他類型之基板，諸如一剛性基板。第一載體基板10然後自第一重佈層20拆卸。 如圖2F中所繪示，第一重佈層20自第二表面202薄化以暴露第一重佈層20之導電層22。在一或多項實施例中，第一重佈層20藉由蝕刻經薄化，但不受限制。在某些實施例中，第一重佈層20可藉由研磨、拋光或其他適合薄化方法經薄化。在某些實施例中，假使導電層22提前自第一重佈層20暴露，則可省略薄化操作。在某些實施例中，經暴露導電層22組態為接點墊。 如圖2G中所繪示，複數個第二互連凸塊46形成於第一重佈層20上方且電連接至經暴露導電層22。在一或多項實施例中，第二互連凸塊46係一焊料球，但並不限於此。 如圖2H中所繪示，第一重佈層20劃分成若干片，且第一重佈層20之每一片連接至對應封裝40。在一或多項實施例中，第一重佈層20可藉由鋸切或其他適合切割方法來劃分。 如圖2I中所繪示，連接至第一重佈層20之對應片之封裝40自暫時基板42拆卸以形成一半導體封裝結構1。在一或多項實施例中，第二互連凸塊46組態為外部連接器，且電連接至放置在第一重佈層20之第二表面202上方之一電路板48使得電路板48利用第二互連凸塊46電連接至第一重佈層20。在一或多項實施例中，半導體封裝結構1可堆疊在另一封裝結構上。 第一晶片30嵌入於第一囊封物38中，且因此總體厚度減小。第一互連凸塊36在第一囊封物38中且在形成第一囊封物38之前形成，且因此不需要通孔結構來電連接封裝40與第一重佈層20。因此，降低製造成本及複雜度。另外，阻止第一晶片30在形成通孔結構中由於高溫而受熱損壞。而且，藉由低溫操作形成第一互連凸塊36，且半導體封裝結構1需要一個成型操作來形成第一囊封物38。相應地，減輕翹曲問題。 圖3係圖解說明根據本揭露之各種態樣之用於製造一半導體封裝結構之一方法之一流程圖。在一或多項實施例中，方法200係繼圖1中之方法100之操作140之後。方法200以操作210繼續進行，其中在一第二載體基板上方形成一第二重佈層。方法200以操作220繼續，其中在該第二重佈層上方放置複數個第二晶片。方法200以操作230繼續進行，其中利用複數個第二互連凸塊將每一片第一重佈層與對應封裝電連接至第二重佈層。方法200以操作240繼續進行，其中在該第一重佈層與該第二重佈層之間形成一第二囊封物。 方法200僅僅係一實例，且不意欲限制本揭露(除申請專利範圍中明確陳述之內容之外)。可在方法200之前、期間及之後提供額外操作，且可替換、刪去或四處移動所闡述之某些操作以用於方法之額外實施例。 圖4A、圖4B、圖4C、圖4D、圖4E及圖4F係在根據本揭露之一或多項實施例之製造半導體封裝結構之各種操作中之一者時之剖面圖。如圖4A中所繪示，一第二重佈層60形成於一第二載體基板50上方。第二載體基板50組態為用於形成第二重佈層60之一暫時載體，且隨後將被移除。在一或多項實施例中，第二載體基板50係諸如一玻璃基板之一絕緣基板。第二載體基板50可包含諸如一矽基板之一半導體基板、諸如一金屬基板之一導電基板或其他適合基板。第二重佈層60具有彼此相對之一第三表面603及一第四表面604。在某些實施例中，第二重佈層60之第四表面604面對第二載體基板50。第二重佈層60由至少一個導電層及至少一個絕緣層形成，且經組態以與兩個或兩個以上裝置電通信。在一或多項實施例中，第二重佈層60包含三個導電層62、64、66及環繞導電層62、64、66之至少一個絕緣層68。在某些實施例中，導電層62、64、66包含不同圖案，且某些部分電連接。在某些實施例中，導電層62自第四表面604暴露，且導電層66自第三表面603暴露。在某些實施例中，第二重佈層60藉由執行數個沈積操作、光微影操作及蝕刻操作而形成。在某些實施例中，導電層62、64、66之材料包含諸如銅、鈦、類似物或其一組合之金屬。至少一個絕緣層68之材料可包含無機及/或有機絕緣材料。 如圖4B中所繪示，數個第二晶片70放置在第二重佈層60上方。在一或多項實施例中，第二晶片70包含主動裝置晶片72及/或被動裝置晶片74。以實例方式，主動裝置晶片72可包含系統單晶片(SOC)。被動裝置晶片74可包含形成於其中之電阻器、電容器、電感器或其一組合。在某些實施例中，被動裝置晶片74可呈積體電路之形式，但並不限於此。第二晶片70可透過表面安裝技術(SMT)或其他適合接合技術安裝在第二重佈層60上。在某些實施例中，第二晶片70中之每一者包含複數個接點墊70P，且第二晶片70藉由如下方式電連接至第二重佈層60：透過諸如焊料膏、焊料凸塊或其他適合導電材料之導電材料76將接點墊70P接合至第二重佈層60之經暴露導電層66之一部分。在一或多項實施例中，主動裝置晶片72及被動裝置晶片74透過第二重佈層60彼此電通信。在某些實施例中，不同第二晶片70之厚度可係相異的。舉例而言，主動裝置晶片72及被動裝置晶片74之厚度不同。 如圖4C中所繪示，包含連接至藉由圖2A至圖2I中所圖解說明之方法形成之對應封裝40之第一重佈層20片的半導體封裝結構放置在第二重佈層60上，且利用複數個第二互連凸塊46電連接至第二重佈層60。在一或多項實施例中，第二互連凸塊46係一焊料球，其中該焊料球之一個端子電連接至第一重佈層20，且該焊料球之另一端子電連接至第二重佈層60之經暴露導電層66之另一部分。第二互連凸塊46可包含其他類型之導體。 如圖4D中所繪示，一第二囊封物78放置在第一重佈層20與第二重佈層60之間。在一或多項實施例中，第二囊封物78封圍第二晶片70且環繞第二互連凸塊46之側向壁。在一或多項實施例中，第二囊封物78之材料係一模塑料。在某些實施例中，一底膠填充層可形成於第二晶片70與第二重佈層60之間。在某些實施例中，第二囊封物78係一成型底膠填充(MUF)層且因此不需要一額外底膠填充層。在一或多項實施例中，焊料球之兩個相對端子自第二囊封物78暴露以分別電連接至第一重佈層20及第二重佈層60。 如圖4E中所繪示，封裝40附接至另一暫時基板82。在一或多項實施例中，暫時基板82係一撓性膜，諸如固定在一框架84上之一膠帶。在某些實施例中，暫時基板82可包含其他類型之基板，諸如一剛性基板。第二載體基板50然後自第二重佈層60拆卸。在某些實施例中，第二重佈層60自第四表面604經薄化以暴露第二重佈層60之導電層62。在一或多項實施例中，第二重佈層60藉由蝕刻經薄化，但不受限制。在某些實施例中，第二重佈層60可藉由研磨、拋光或其他適合薄化方法經薄化。在某些實施例中，假使導電層62提前自第二重佈層60暴露，則可省略薄化操作。在某些實施例中，經暴露導電層62組態為接點墊。 如圖4F中所繪示，數個外部連接器86形成於第二重佈層60之第四表面604上方且電連接至第二重佈層60之經暴露導電層62之一部分。在一或多項實施例中，外部連接器86配置為一球柵陣列(BGA)，但並不限於此。在一或多項實施例中，數個第三晶片88可放置在第二重佈層60之第四表面604上方且電連接至第二重佈層60之經暴露導電層62之另一部分。在某些實施例中，第三晶片88係一被動裝置晶片，該被動裝置晶片可包含形成於其中之電阻器、電容器、電感器或其一組合。第三晶片88透過第二重佈層60與第二晶片70電通信，且透過第一重佈層20與第一晶片30電通信。第二重佈層60藉由任何適合切割方法經鋸切。隨後，暫時基板82經移除以形成半導體封裝結構2。 第一晶片30及第二晶片70嵌入於第一囊封物38及第二囊封物78中，且因此總體厚度減小。第一互連凸塊36形成於第一囊封物38中，且第二互連凸塊46形成於第二囊封物78中，且因此不需要通孔結構。因此，降低製造成本及複雜度。另外，阻止第一晶片30及第二晶片70在形成通孔結構中由於高溫而受熱損壞。而且，藉由低溫操作形成第一互連凸塊36及第二互連凸塊46，且半導體封裝結構2需要兩個成型操作來形成第一囊封物38及第二囊封物78。相應地，減輕翹曲問題。 本揭露不限於上文所提及之實施例，且可具有其他不同實施例。為簡化說明且為了本揭露之實施例中之每一者之間的比較方便，用完全相同編號來標記以下實施例中之每一者中之完全相同組件。為使比較實施例之間的差異更容易，以下說明將詳述不同實施例當中之相異點且將不冗餘地闡述完全相同特徵。 圖5係圖解說明根據本揭露之某些實施例之一半導體封裝結構3之一示意圖。如圖5中所展示，半導體封裝結構3包含一第一重佈層(RDL)20、第一晶片30、第一互連凸塊36、第一囊封物38、一第二重佈層60、第二晶片70、第二互連凸塊46及第二囊封物78。第一重佈層20具有彼此相對之一第一表面201及一第二表面202。第一晶片30在複數個接點墊30P面對第一表面201之情況下放置在第一重佈層20上方且電連接至第一重佈層20。第一互連凸塊36放置在第一表面201上方且電連接至第一重佈層20。第一囊封物38放置在第一重佈層20之第一表面201上方。第一囊封物38封圍第一晶片30且環繞第一互連凸塊36之側向壁。第二重佈層60在第一重佈層20之第二表面202上方。第二重佈層60具有彼此相對之一第三表面603及一第四表面604，且第三表面603面對第二表面202。第二晶片70在複數個接點墊70P面對第三表面603之情況下放置在第二重佈層60上方。第二互連凸塊46放置在第三表面603上方且電連接至第二重佈層60。第二囊封物78放置在第一重佈層20與第二重佈層60之間。第二囊封物78封圍第二晶片70且環繞第二互連凸塊46之側向壁。在一或多項實施例中，半導體封裝結構3進一步包含放置在第一囊封物38上方且透過第一互連凸塊36電連接至第一重佈層20之一封裝(未展示)。在一或多項實施例中，第二互連凸塊46之高度高於第二晶片70之高度。在一或多項實施例中，半導體封裝結構3進一步包含放置在第二重佈層60之第四表面604上方之一電路板(未展示)以及放置在第四表面604與電路板之間以電連接第二重佈層60與電路板之外部連接器86。 圖6係圖解說明根據本揭露之某些實施例之一半導體封裝結構4之一示意圖。如圖6中所展示，半導體封裝結構4與圖5中之半導體封裝結構3之間的差異之一係：半導體封裝結構4進一步包含放置在第二囊封物78中之導電柱90。在某些實施例中，第二互連凸塊46中之每一者係一焊料膏，其中導電柱90之一個端子連接至第二重佈層60，且導電柱90之另一端子連接至對應第二互連凸塊46。導電柱90及第二互連凸塊46之製作及材料係不同的。在一或多項實施例中，導電柱90藉由沈積、光微影及蝕刻操作而形成，且因此毗鄰導電柱90之間的間距可減小。相應地，與焊料膏相關聯之導電柱90能夠實現第一重佈層20與第二重佈層60之間的精細間距結合。導電柱90與第二互連凸塊46之間的高度比可基於不同考量而修改。在某些實施例中，導電柱90之上表面與第二晶片70之上表面實質上水平。在某些實施例中，導電柱90之上表面低於第二晶片70之上表面。在一或多項實施例中，導電柱90及第二互連凸塊46之總體高度高於第二晶片70之高度。 在本揭露中，晶片嵌入於囊封物中，且因此半導體封裝結構之總體厚度減小。由於晶片當中之電通信路徑之減少而改良系統效能。該等晶片經組態以用於提供不同功能性，諸如主動裝置晶片及被動裝置晶片可具有不同厚度，且因此選擇晶片之靈活性增加。不需要通孔結構，且因此降低製造成本及複雜度。阻止該等晶片在形成通孔結構中由於高溫而受熱損壞。與通孔結構相比較，互連凸塊由可藉由低溫操作形成之低熔點材料形成。因此，減少熱預算。而且，半導體封裝結構需要較少成型操作來形成囊封物。相應地，減輕翹曲問題。 在一項例示性態樣中，一種半導體封裝結構包含一重佈層(RDL)、一晶片、複數個互連凸塊及一囊封物。該重佈層具有彼此相對之一第一表面及一第二表面。該晶片在複數個接點墊面對該第一表面之情況下放置在該重佈層上方且電連接至該重佈層。該等互連凸塊放置在該第一表面上方且電連接至該重佈層。該囊封物放置在該重佈層之該第一表面上方，且該囊封物封圍該晶片且環繞該等互連凸塊之側向壁。 在另一例示性態樣中，一種半導體封裝結構包含一第一重佈層、一第一晶片、複數個第一互連凸塊、一第一囊封物、一第二重佈層、一第二晶片、複數個第二互連凸塊及一第二囊封物。該第一重佈層具有彼此相對之一第一表面及一第二表面。該第一晶片在複數個接點墊面對該第一表面之情況下放置在該第一重佈層上方且電連接至該第一重佈層。該等第一互連凸塊放置在該第一表面上方且電連接至該第一重佈層。該第一囊封物放置在該第一重佈層之該第一表面上方。該第一囊封物封圍該第一晶片且環繞該等第一互連凸塊之側向壁。該第二重佈層在該第一重佈層之該第二表面上方。該第二重佈層具有彼此相對之一第三表面及一第四表面，且該第三表面面對該第二表面。該第二晶片在複數個接點墊面對該第三表面之情況下放置在該第二重佈層上方。該等第二互連凸塊放置在該第三表面上方且電連接至該第二重佈層。該第二囊封物放置在該第一重佈層與該第二重佈層之間，且該第二囊封物封圍該第二晶片且環繞該等第二互連凸塊之側向壁。 在又一態樣中，一種用於製造一半導體封裝結構之方法包含：在一第一載體基板上方形成一第一重佈層；在該第一重佈層上方放置複數個第一晶片；利用複數個第一互連凸塊將複數個封裝電連接至該第一重佈層；及在該等封裝與該第一重佈層之間形成一第一囊封物。 前文概述數項實施例之結構使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解，其可容易地使用本揭露作為設計或修改用於實施相同目的及/或達成本文中介紹之實施例之相同優點之其他程序及結構的一基礎。熟習此項技術者亦應認識到，此等等效構造不背離本揭露之精神及範疇，且其可在本文中做出各種改變、替代及更改而不背離本揭露之精神及範疇。
3‧‧‧半導體封裝結構 4‧‧‧半導體封裝結構 10‧‧‧第一載體基板 20‧‧‧第一重佈層 22‧‧‧導電層/經暴露導電層 24‧‧‧導電層 26‧‧‧導電層/經暴露導電層 28‧‧‧絕緣層 30‧‧‧第一晶片 30P‧‧‧接點墊 34‧‧‧導電材料 36‧‧‧第一互連凸塊 38‧‧‧第一囊封物 40‧‧‧封裝 42‧‧‧暫時基板 44‧‧‧框架 46‧‧‧第二互連凸塊 48‧‧‧電路板 50‧‧‧第二載體基板 60‧‧‧第二重佈層 62‧‧‧導電層/經暴露導電層 64‧‧‧導電層 66‧‧‧導電層/經暴露導電層 68‧‧‧絕緣層 70‧‧‧第二晶片 70P‧‧‧接點墊 72‧‧‧主動裝置晶片 74‧‧‧被動裝置晶片 76‧‧‧導電材料 78‧‧‧第二囊封物 82‧‧‧暫時基板 84‧‧‧框架 86‧‧‧外部連接器 88‧‧‧第三晶片 90‧‧‧導電柱 201‧‧‧第一表面 202‧‧‧第二表面 603‧‧‧第三表面 604‧‧‧第四表面
當連同附圖一起閱讀時，自以下詳細說明最佳地理解本揭露之態樣。應注意，根據業內標準慣例，各種結構未按比例繪製。實際上，為論述清晰，可任意地增加或減小各種結構之尺寸。 圖1係圖解說明根據本揭露之各種態樣之用於製造一半導體封裝結構之一方法之一流程圖。 圖2A、圖2B、圖2C、圖2D、圖2E、圖2F、圖2G、圖2H及圖2I係在根據本揭露之一或多項實施例之製造半導體封裝結構之各種操作中之一者時之剖面圖。 圖3係圖解說明根據本揭露之各種態樣之用於製造一半導體封裝結構之一方法之一流程圖。 圖4A、圖4B、圖4C、圖4D、圖4E及圖4F係在根據本揭露之一或多項實施例之製造半導體封裝結構之各種操作中之一者時之剖面圖。 圖5係圖解說明根據本揭露之某些實施例之一半導體封裝結構之一示意圖。 圖6係圖解說明根據本揭露之某些實施例之一半導體封裝結構之一示意圖。
20‧‧‧第一重佈層
22‧‧‧導電層/經暴露導電層
24‧‧‧導電層
26‧‧‧導電層/經暴露導電層
28‧‧‧絕緣層
30‧‧‧第一晶片
30P‧‧‧接點墊
34‧‧‧導電材料
36‧‧‧第一互連凸塊
38‧‧‧第一囊封物
40‧‧‧封裝
46‧‧‧第二互連凸塊
48‧‧‧電路板
201‧‧‧第一表面
202‧‧‧第二表面

Claims (10)

  1. 一種半導體封裝結構，其包括：一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面；一晶片，其在複數個接點墊面對該第一表面之情況下放置在該重佈層上方且電連接至該重佈層；複數個互連凸塊，其放置在該第一表面上方且電連接至該重佈層；一第二重佈層，其在該重佈層之該第二表面下方，其中該第二重佈層具有彼此相對之一第三表面及一第四表面且該第三表面面對該第二表面；一第二晶片，其放置在該第二重佈層上方且電連接至該第二重佈層，其中該等第二晶片包含面對該第二重佈層之該第三表面之複數個接點墊；及一囊封物，其放置在該重佈層之該第一表面上方，其中該囊封物封圍該晶片且環繞該等互連凸塊之側向壁。
  2. 如請求項1之半導體封裝結構，其進一步包括放置在該第二重佈層之該第四表面下方之一電路板，及放置在該第四表面與該電路板之間以電連接該第二重佈層與該電路板之複數個外部連接器。
  3. 一種半導體封裝結構，其包括：一第一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面； 一第一晶片，其在複數個接點墊面對該第一表面之情況下放置在該第一重佈層上方且電連接至該第一重佈層；複數個第一互連凸塊，其放置在該第一表面上方且電連接至該第一重佈層；一第一囊封物，其放置在該第一重佈層之該第一表面上方，其中該第一囊封物封圍該等第一晶片且環繞該等第一互連凸塊之側向壁；一第二重佈層，其在該第一重佈層之該第二表面下方，其中該第二重佈層具有彼此相對之一第三表面及一第四表面且該第三表面面對該第二表面；一第二晶片，其在該等接點墊面對該第三表面之情況下放置在該第二重佈層上方；複數個第二互連凸塊，其放置在該第三表面上方且電連接至該第二重佈層；及一第二囊封物，其放置在該第一重佈層與該第二重佈層之間，其中該第二囊封物封圍該第二晶片且環繞該等第二互連凸塊之側向壁。
  4. 如請求項3之半導體封裝結構，其進一步包括放置在該第二重佈層之該第四表面下方之一電路板，及放置在該第四表面與該電路板之間以電連接該第二重佈層與該電路板之複數個外部連接器。
  5. 一種半導體封裝結構，其包括：一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面；一晶片，其在複數個接點墊面對該第一表面之情況下放置在該重佈 層上方且電連接至該重佈層；複數個互連凸塊，其放置在該第一表面上方且電連接至該重佈層；複數個導電柱，其放置在該第一表面上方，其中該等導電柱中之每一個之一個端子連接至該重佈層，且該等導電柱中之每一個之另一端子連接至該等互連凸塊中之對應互連凸塊；及一囊封物，其放置在該重佈層之該第一表面上方，其中該囊封物封圍該晶片且環繞該等互連凸塊之側向壁及該等導電柱之側向壁。
  6. 如請求項5之半導體封裝結構，其進一步包括放置在該重佈層之該第二表面上方之一電路板，及放置在該第二表面與該電路板之間以電連接該重佈層與該電路板之複數個外部連接器。
  7. 一種用於製造半導體封裝結構之方法，其包括：在一第一載體基板上方形成一第一重佈層；在該第一重佈層上方放置複數個第一晶片；利用複數個第一互連凸塊將複數個封裝電連接至該第一重佈層；在該等封裝與該第一重佈層之間形成一第一囊封物；及將該等封裝附接到暫時基板。
  8. 一種半導體封裝結構，其包括：一第一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面；一第一晶片，其在複數個接點墊面對該第一表面之情況下放置在該 第一重佈層之該第一表面上方且電連接至該第一重佈層；一第二晶片，其在該等接點墊面對該第二表面之情況下放置在該第一重佈層之該第二表面上方且電連接至該第一重佈層，其中該第一重佈層放置在該第一晶片與該第二晶片之間；複數個外部連接器，其放置在該第一重佈層之該第二表面上方且電連接至該第二表面；一第二重佈層，其在該第一重佈層上方，其中該第二重佈層具有彼此相對之一第三表面及一第四表面，且該第三表面面對該第一重佈層之該第一表面；及一互連結構，其在該第一重佈層與該第二重佈層之間且電連接至該第一重佈層及該第二重佈層，其中該互連結構包括彼此堆疊之一導電柱及一導電凸塊。
  9. 一種半導體封裝結構，其包括：一第一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面；一第二重佈層，其在該第一重佈層之該第一表面上方，其中該第二重佈層具有彼此相對之一第三表面及一第四表面，且該第三表面面對該第一表面；一互連結構，其放置在該第一重佈層與該第二重佈層之間且電連接至該第一重佈層及該第二重佈層，其中該互連結構包括彼此堆疊之一導電柱及一導電凸塊；及一囊封物，其放置在該第一重佈層與該第二重佈層之間，其中該囊 封物環繞該導電凸塊之側向壁及該導電柱之側向壁。
  10. 一種半導體封裝結構，其包括：一第一重佈層(RDL)，其具有彼此相對之一第一表面及一第二表面；一第二重佈層，其在該第一重佈層之該第一表面上方，其中該第二重佈層具有彼此相對之一第三表面及一第四表面，且該第三表面面對該第一表面；一第一晶片，其放置在該第一重佈層與該第二重佈層之間；一互連結構，其放置在該第一重佈層與該第二重佈層之間且電連接至該第一重佈層及該第二重佈層，其中該互連結構包括彼此堆疊之一導電柱及一導電凸塊，且該導電柱及該導電凸塊包括不同之材料；及一囊封物，其放置在該第一重佈層與該第二重佈層之間，其中該囊封物環繞該導電凸塊之側向壁及該導電柱之側向壁。
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