TWI739274B - 半導體異質結構及包含其之場效電晶體與光感測器 - Google Patents
半導體異質結構及包含其之場效電晶體與光感測器 Download PDFInfo
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- TWI739274B TWI739274B TW109100987A TW109100987A TWI739274B TW I739274 B TWI739274 B TW I739274B TW 109100987 A TW109100987 A TW 109100987A TW 109100987 A TW109100987 A TW 109100987A TW I739274 B TWI739274 B TW I739274B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 230000005669 field effect Effects 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 16
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 31
- 229940112669 cuprous oxide Drugs 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical group [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 3
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- 230000015572 biosynthetic process Effects 0.000 description 9
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 7
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- 235000012431 wafers Nutrition 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
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- 239000000463 material Substances 0.000 description 4
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- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
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- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明提供一種半導體異質結構,其包含一底層半導體、一頂層半導體以及一電極基板。底層半導體之一上表面包含一第一晶面,頂層半導體之一下表面包含一第二晶面,且頂層半導體之下表面與底層半導體之上表面接觸,電極基板設置於底層半導體之下方。藉此,通過兩種不同半導體之間的不同晶面組合進行電性接觸,來觀察與晶面相關的特性,並應用在電子或光學裝置。
Description
本發明是關於一種半導體異質結構,特別是關於一種控制晶面之半導體異質結構及包含其之場效電晶體與光感測器。
近年來,高科技產業已蓬勃發展,而在電子電路或是積體電路所構建而成的晶片中,主要以半導體所製成的電晶體來對電子訊號進行調變或是開關的作用,以達到預期的功能。
目前電晶體的開發主要以元件微小化為研究重點,而奈米材料因具有光學、電學及磁性性質而引起許多研究者的關注,其獨特的性質與尺寸大小及形狀有關,然而,已有文獻證明包括Ag2O、TiO2或PbS等晶體在內的各種多面半導體具有與晶面效應相關之導電、光催化或光學特性。
有鑑於此,探討多面半導體所帶來之性能,使其能夠運用於電子產業,遂成相關業者努力的目標。
本發明之一目的是提供一種半導體異質結構,藉由兩種不同半導體之間的不同晶面組合進行電性接觸,來觀察與晶面相關的特性,並應用在電子或光學裝置。
本發明之一實施方式提供一種半導體異質結構,其包含一底層半導體、一頂層半導體以及一電極基板。其中,底層半導體之一上表面包含一第一晶面,頂層半導體之一下表面包含一第二晶面,且頂層半導體之下表面與底層半導體之上表面接觸,電極基板設置於底層半導體之下方。
依據前述實施方式之半導體異質結構,其中頂層半導體係以一溶液相方式合成,並塗布於底層半導體。
依據前述實施方式之半導體異質結構,其中底層半導體可為矽晶片、鍺晶片或砷化鎵晶片。
依據前述實施方式之半導體異質結構,其中頂層半導體可為氧化物、硫化物或硒化物。
依據前述實施方式之半導體異質結構,其中頂層半導體可為氧化亞銅奈米晶體。
依據前述實施方式之半導體異質結構,其中第一晶面與第二晶面可選自由{100}晶面、{110}晶面及{111}晶面所組成之群。
依據前述實施方式之半導體異質結構,其中電極基板可為不鏽鋼電極。
依據前述實施方式之半導體異質結構,可更包含一銀膠層,其設置於底層半導體之一下表面與電極基板之間。
本發明之另一實施方式提供一種場效電晶體,其包含前段所述之半導體異質結構。
本發明之又一實施方式提供一種光感測器,其包含前段所述之半導體異質結構。
藉此,本發明之半導體異質結構透過兩種不同半導體之間的不同晶面組合進行電性接觸,以測量光響應電導率,證明在半導體材料中可以觀察到與晶面相關的導電或光學特性,並根據不同光響應電導率之趨勢,依需求應用在相關之電子或光學裝置。
100‧‧‧半導體異質結構
110‧‧‧底層半導體
111‧‧‧第一晶面
120‧‧‧頂層半導體
121‧‧‧第二晶面
130‧‧‧電極基板
140‧‧‧銀膠層
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:
第1圖係繪示依照本發明之一實施方式之一種半導體異質結構的示意圖;
第2A圖係繪示依照本發明實施例1之照光與未照光的電壓對電流關係圖;
第2B圖係繪示依照本發明實施例1的修正能帶圖;
第3A圖係繪示依照本發明實施例2之照光與未照光的電壓對電流關係圖;
第3B圖係繪示依照本發明實施例2的修正能帶圖;
第4A圖係繪示依照本發明實施例3之照光與未照光的電壓對電流關係圖;
第4B圖係繪示依照本發明實施例3的修正能帶圖;
第5A圖係繪示依照本發明實施例4之照光與未照光的電壓對電流關係圖;
第5B圖係繪示依照本發明實施例4的修正能帶圖;
第6A圖係繪示依照本發明實施例5之照光與未照光的電壓對電流關係圖;
第6B圖係繪示依照本發明實施例5之照光的修正能帶圖;
第6C圖係繪示依照本發明實施例5之未照光的修正能帶圖;
第7A圖係繪示依照本發明實施例6之照光與未照光的電壓對電流關係圖;
第7B圖係繪示依照本發明實施例6之照光的修正能帶圖;
第7C圖係繪示依照本發明實施例6之未照光的修正能帶圖;
第8圖係繪示依照本發明實施例7之電壓對電流關係圖;
第9圖係繪示依照本發明實施例8之電壓對電流關係圖;以及
第10圖係繪示依照本發明實施例9之電壓對電流關係圖。
以下將參照圖式說明本發明之實施方式。為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,閱讀者應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示;並且重複之元件將可能使用相同的編號表示。
請參照第1圖,其係繪示依照本發明之一實施方式之一種半導體異質結構100的示意圖。由第1圖可知,半導體異質結構100包含一底層半導體110、一頂層半導體120以及一電極基板130。
詳細來說,底層半導體110之一上表面包含一第一晶面111,頂層半導體120之一下表面包含一第二晶面121,且頂層半導體120之下表面與底層半導體110之上表面接觸,電極基板130設置於底層半導體110之下方。藉此,通過第一晶面111與第二晶面121之不同排列組合進行電性接觸,來觀察半導體之晶面效應所造成的現象,並可進一步應用於相關之電子或光學裝置。
底層半導體110為本領域常見之半導體,其可為但不限於矽晶片、鍺晶片或砷化鎵晶片,另外,在本發明中,底層半導體110之第一晶面111可為{100}晶面、{110}晶面以及{111}晶面,但不以上述所揭示內容為限。
頂層半導體120係以一溶液相方式合成,並塗布於底層半導體110,塗布方式可為但不限於旋轉塗布或濺鍍,使溶液相的晶體生長在底層半導體110。頂層半導體120可為但不限於氧化物、硫化物或硒化物,在本發明中,頂層半導體120之第二晶面121可為{100}晶面、{110}晶面以及{111}晶面,但不以上述所揭示內容為限。具體來說,本發明所使用之頂層半導體120為氧化亞銅奈米晶體,其具有包含立方體、八面體及菱形十二面體之結構,氧化亞銅奈米立方體為{100}晶面,氧化亞銅奈米八面體為{111}晶面,而氧化亞銅奈米菱形十二面體為{110}晶面,故可以利用溶液相方式製備合成出不同第二晶面121之頂層半導體120。
本發明之半導體異質結構100係利用控制第一晶面111與第二晶面121之組合來觀察導電行為、光催化行為或相關之特性,故第一晶面111與第二晶面121係選自由{100}晶面、{110}晶面及{111}晶面所組成之群。另外,半導體異質結構100可更包含一銀膠層140,其設置於底層半導體110之一下表面與電極基板130之間,而電極基板130可為但不限於不鏽鋼電極,銀膠層140係為了使半導體異質結構100可進行電性連接,且設置於底層半導體110之下表面與電極基板130之間可避免側面接觸。
茲以下列具體實施例進一步示範說明本發明,用以有利於本發明所屬技術領域通常知識者,可在不需過度解讀的情形下完整利用並實踐本發明,而不應將這些實施例
視為對本發明範圍的限制,但用於說明如何實施本發明的材料及方法。
本發明之合成例1為氧化亞銅奈米立方體(cubes),其合成方法係將0.348克的十二烷基硫酸鈉(sodium dodecyl sulfate,SDS)和38.20mL的去離子水添加至樣品瓶,之後,將樣品瓶置於31℃的水浴中,添加0.4mL的0.1M氯化銅水溶液(CuCl2)並緩慢地攪拌10分鐘。接著,加入0.8mL的1M氫氧化鈉水溶液(NaOH)和0.6mL的0.2M氫氯化烴胺(NH2OH‧HCl)反應2小時,最後,通過7500rpm之離心機離心5分鐘以收集氧化亞銅奈米立方體粒子,並以30mL的99.8%乙醇洗滌4次,其中合成例1之氧化亞銅奈米立方體的晶面為{100}晶面。
本發明之合成例2為氧化亞銅奈米八面體(octahedra,Oh),其合成方法係將0.348克的十二烷基硫酸鈉(sodium dodecyl sulfate,SDS)和36.20mL的去離子水添加至樣品瓶,之後,將樣品瓶置於室溫下,添加0.4mL的0.1M氯化銅水溶液(CuCl2)並緩慢地攪拌10分鐘。接著,加入0.8mL的1M氫氧化鈉水溶液(NaOH)和2.6mL的0.2M氫氯化烴胺(NH2OH‧HCl),反應2小時,最後,通過7500rpm之離心機離心5分鐘以收集氧化亞銅奈米八面體粒子,並以30mL的99.8%乙醇洗滌4次,其中合成例2之氧化亞銅奈米八面體的晶面為{111}晶面。
本發明之合成例3為氧化亞銅奈米菱形十二面體(rhombic dodecahedra,RD),其合成方法係將0.348克的十二烷基硫酸鈉(sodium dodecyl sulfate,SDS)和27.68mL的去離子水添加至樣品瓶,之後,將樣品瓶置於31℃的水浴中,添加2.0mL的0.1M氯化銅水溶液(CuCl2)並緩慢地攪拌10分鐘。接著,加入0.72mL的1M氫氧化鈉水溶液(NaOH)和9.6mL的0.1M氫氯化烴胺(NH2OH‧HCl),反應1小時,最後,通過7500rpm之離心機離心5分鐘以收集氧化亞銅奈米菱形十二面體粒子,並以30mL的99.8%乙醇洗滌4次,其中合成例3之氧化亞銅奈米菱形十二面體的晶面為{110}晶面。
本發明之實施例1至實施例9係先將具有不同晶面之矽晶片與鍺晶片裁切成0.8cm2,並於超音波震盪器中以丙酮清洗10分鐘後,放置於乾燥器中使其乾燥,以作為底層半導體。之後,將合成例1至合成例3以乙醇稀釋至24μg/mL,作為頂層半導體,並滴於乾燥後之矽晶片與鍺晶片上,最後再放置於乾燥器,以完成實施例1至實施例9之半導體異質結構,並進行光響應電導率測量與分析。
關於實施例1至實施例9之頂層半導體與底層半導體之不同晶面的組合,如下表一所示。
本發明之光響應電導率測量之裝置包含光源、導電探針以及原子力顯微鏡(Atomic Force Microscope,AFM)。光源為功率30W/cm2的白光LED,且光源與實施例之間的距離為10公分,導電探針具有2N/m的彈簧常數及70kHz的共振頻率之Pt/Ir塗層,而原子力顯微鏡的型號為Bruker,並通過PF-TUNA來進行電導率之測量。
將實施例1至實施例9進行光響應電導率之測量與分析,以得到電壓對電流關係圖,並繪示修正能帶圖來解釋所觀察之半導體晶面相關的電導率特性。其中,在電壓對電流關係圖中,Cu2O{100}至Si{100}代表電流從{100}氧化亞銅晶面進入{100}矽晶面,其餘組合以此類推,不另贅述,而在修正能帶圖中,qΦm為金屬功函數,qΦs為半導體功函數,Eg為半導體能隙,EVBM為最大電子價帶,並藉由繪製界面帶彎曲的程度,以反映所觀察到的頂層半導體與底層半導體之間不同晶面組合的導電率差異。
請參閱第2A圖以及第2B圖,其中第2A圖繪示依照本發明實施例1之照光與未照光的電壓對電流關係圖,第2B圖繪示依照本發明實施例1的修正能帶圖。由第2A圖以及第2B圖的結果可見,在照光與未照光下,僅於電壓為-1.5V以下時,具有電流流通,但電流值非常小,約為1nA以下,且電流從{100}氧化亞銅晶面至{100}矽晶面以及從{100}矽晶面至{100}氧化亞銅晶面之間的能量障壁(energy barrier)大小相近,故可知{100}矽晶面與{100}氧化亞銅晶面(氧化亞銅奈米立方體)具有較低的導電性,且兩者之導電性大小相近。
請參閱第3A圖以及第3B圖,其中第3A圖繪示依照本發明實施例2之照光與未照光的電壓對電流關係圖,第3B圖繪示依照本發明實施例2的修正能帶圖。由第3A圖以及第3B圖的結果可見,在照光與未照光下,在電壓為1.5V至1.75V時,電流可達50nA,可說明在相同電壓下,{111}矽晶面與{111}氧化亞銅晶面之導電性分別高於{100}矽晶面與{100}氧化亞銅晶面,且電流從{111}氧化亞銅晶面至{111}矽晶面以及從{111}矽晶面至{111}氧化亞銅晶面之間的能量障壁大小相近,故可知{111}矽晶面與{111}氧化亞銅晶面(氧化亞銅奈米八面體)具有較高的導電性,且兩者之導電性大小相近。
請參閱第4A圖以及第4B圖,其中第4A圖繪示依照本發明實施例3之照光與未照光的電壓對電流關係圖,第4B圖繪示依照本發明實施例3的修正能帶圖。由第4A
圖以及第4B圖的結果可見,電壓與電流之曲線呈非對稱性,詳細的說,在電壓為-3.5V時,未照光與照光之電流分別為75nA及100nA,而在電流流動之相反方向時,電流為0nA並維持至3.5V,因此產生了整流效應,此結果類似於p-n接面(p-n junction),適合作為場效電晶體。
請參閱第5A圖以及第5B圖,其中第5A圖繪示依照本發明實施例4之照光與未照光的電壓對電流關係圖,第5B圖繪示依照本發明實施例4的修正能帶圖。由第5A圖以及第5B圖的結果可見,電壓與電流之曲線呈非對稱性,詳細的說,在電壓為-3.0V時,未照光與照光之電流分別為38nA及50nA,而在電流流動之相反方向時,電流為0nA並維持至3.0V,因此產生了整流效應,此結果類似於p-n接面(p-n junction),適合作為場效電晶體。另外,將實施例3與實施例4做比較,可發現在相同電壓下,流入{100}矽晶面之電流大於{110}矽晶面,故可得知{100}矽晶面之導電性高於{110}矽晶面。
請參閱第6A圖、第6B圖以及第6C圖,其中第6A圖繪示依照本發明實施例5之照光與未照光的電壓對電流關係圖,第6B圖繪示依照本發明實施例5之照光的修正能帶圖,第6C圖繪示依照本發明實施例5之未照光的修正能帶圖。由第6A圖、第6B圖以及第6C圖的結果可見,在電壓為-3.0V時,未照光與照光之電流分別為4nA及9nA,可得知在照光時的電流與未照光時的電流相差2倍,並配合照光與未照光之修正能帶圖中,電流從{100}氧化亞銅晶面至
{110}矽晶面以及從{110}矽晶面至{100}氧化亞銅晶面之間的能量障壁大小,說明{100}氧化亞銅晶面與{110}矽晶面之間具有光電流響應,適合作為光感測器。
請參閱第7A圖、第7B圖以及第7C圖,其中第7A圖繪示依照本發明實施例6之照光與未照光的電壓對電流關係圖,第7B圖繪示依照本發明實施例6之照光的修正能帶圖,第7C圖繪示依照本發明實施例6之未照光的修正能帶圖。由第7A圖、第7B圖以及第7C圖的結果可見,在電壓為-3.5V時,未照光與照光之電流分別為1nA及14nA,可得知在照光時的電流與未照光時的電流相差14倍,並配合照光與未照光之修正能帶圖中,電流從{110}氧化亞銅晶面至{111}矽晶面以及{111}矽晶面與{110}氧化亞銅晶面之間的能量障壁大小,說明{110}氧化亞銅晶面與{111}矽晶面之間具有光電流響應,適合作為光感測器。另外,將實施例5與實施例6做比較,可發現在相同電壓下,實施例6之光電流響應大於實施例5。
請參閱第8圖、第9圖以及第10圖,其中第8圖繪示依照本發明實施例7之電壓對電流關係圖,第9圖繪示依照本發明實施例8之電壓對電流關係圖,第10圖繪示依照本發明實施例9之電壓對電流關係圖。由第8圖、第9圖以及第10圖的結果可見,實施例7之{100}鍺晶面與{110}氧化亞銅晶面(氧化亞銅奈米菱形十二面體)具有非對稱性之電壓電流曲線,可用來應用於場效電晶體,而實施例8與實施例9皆為對稱性之電壓電流曲線,且在電壓為6V下,實施
例9之電流高達1000nA,其高於實施例8之800nA,故可知實施例9之導電性高於實施例8。
因此,在本發明中更可進一步提供包含前述半導體異質結構之場效電晶體或光感測器。根據本發明實際測量之結果,實施例3以及實施例4適合應用於場效電晶體,因其具有類似p-n接面之非對稱電壓電流曲線,可產生整流效果,而實施例5以及實施例6適合應用於光感測器,因其在相同電壓下,照光與未照光之電流差異較大。
上述場效電晶體以及光感測器的設計適用於所有半導體組合,並控制兩種不同半導體之晶面組合,來達成所需之效果。意即,所使用之半導體材料可以不同,且主要係通過形成具有有利之晶面組合的半導體異質結構來產生期望之電響應或光電流響應。
綜上所述,本發明所提供之半導體異質結構係藉由測量兩種不同半導體之間不同晶面的組合的光響應電導率,觀察半導體材料中的晶面效應,若不實際進行測量,則無法正確地預測不同半導體之間的導電、光催化及光學性能,並根據不同電響應或光電流響應之趨勢,依需求應用在相關之電子或光學裝置。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧半導體異質結構
110‧‧‧底層半導體
111‧‧‧第一晶面
120‧‧‧頂層半導體
121‧‧‧第二晶面
130‧‧‧電極基板
140‧‧‧銀膠層
Claims (8)
- 一種半導體異質結構,包含:一底層半導體,該底層半導體之一上表面包含一第一晶面,且該底層半導體為矽晶片、鍺晶片或砷化鎵晶片;一頂層半導體,該頂層半導體之一下表面包含一第二晶面,且該頂層半導體之該下表面與該底層半導體之該上表面接觸;以及一電極基板,該電極基板設置於該底層半導體之下方;其中該第一晶面與該第二晶面係選自由{100}晶面、{110}晶面及{111}晶面所組成之群。
- 如申請專利範圍第1項所述之半導體異質結構,其中該頂層半導體係以一溶液相方式合成,並塗布於該底層半導體。
- 如申請專利範圍第1項所述之半導體異質結構,其中該頂層半導體為氧化物、硫化物或硒化物。
- 如申請專利範圍第3項所述之半導體異質結構,其中該頂層半導體為氧化亞銅奈米晶體。
- 如申請專利範圍第1項所述之半導體異質結構,其中該電極基板為不鏽鋼電極。
- 如申請專利範圍第1項所述之半導體異質結構,更包含:一銀膠層,其設置於該底層半導體之一下表面與該電極基板之間。
- 一種場效電晶體,包含如申請專利範圍第1項至第6項中任一項所述之半導體異質結構。
- 一種光感測器,包含如申請專利範圍第1項至第6項中任一項所述之半導體異質結構。
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CN105161625A (zh) * | 2015-09-23 | 2015-12-16 | 北京大学深圳研究生院 | 一种氧化亚铜异质结太阳能电池的制备方法 |
TW201705488A (zh) * | 2015-02-25 | 2017-02-01 | 高通微機電系統科技公司 | 具有異質接面結構之穿隧薄膜電晶體 |
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TW201705488A (zh) * | 2015-02-25 | 2017-02-01 | 高通微機電系統科技公司 | 具有異質接面結構之穿隧薄膜電晶體 |
CN105161625A (zh) * | 2015-09-23 | 2015-12-16 | 北京大学深圳研究生院 | 一种氧化亚铜异质结太阳能电池的制备方法 |
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