TWI735398B - Electronic package and manufacturing method thereof - Google Patents

Electronic package and manufacturing method thereof Download PDF

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Publication number
TWI735398B
TWI735398B TW109145277A TW109145277A TWI735398B TW I735398 B TWI735398 B TW I735398B TW 109145277 A TW109145277 A TW 109145277A TW 109145277 A TW109145277 A TW 109145277A TW I735398 B TWI735398 B TW I735398B
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Prior art keywords
carrier
electronic
section
electronic package
package according
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TW109145277A
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Chinese (zh)
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TW202226482A (en
Inventor
曾景鴻
賈孟寰
蔡芳霖
姜亦震
林長甫
江東昇
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矽品精密工業股份有限公司
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Priority to TW109145277A priority Critical patent/TWI735398B/en
Priority to CN202011605525.XA priority patent/CN114649278A/en
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Publication of TWI735398B publication Critical patent/TWI735398B/en
Publication of TW202226482A publication Critical patent/TW202226482A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

An electronic package in which an electronic element is arranged in a die-bond region of a carrier and electrically connected to the carrier, and a bonding layer is arranged outside the die-bond to surround the electronic element, and then a heat sink is combined with the bonding layer in order to be arranged on the carrier and cover the electronic element, such that the electronic element is deflected relative to the die-bond region and mounted on the carrier so as to make the outline of the electronic element not correspond to the boundary of the die-bond region to balance a stress distribution of the electronic package and avoid delamination between the heat sink and the electronic element.

Description

電子封裝件及其製法 Electronic package and its manufacturing method

本發明係有關一種半導體裝置,尤指一種具散熱件之電子封裝件及其製法。 The present invention relates to a semiconductor device, in particular to an electronic package with a heat sink and its manufacturing method.

隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits)。為了迅速將熱能散逸至大氣中,通常在半導體封裝結構中配置散熱片(Heat Sink或Heat Spreader),該散熱片通常藉由散熱膠結合至晶片背面,以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量。 With the increase in the function and processing speed of electronic products, semiconductor chips, which are the core components of electronic products, need to have higher density of electronic components (Electronic Components) and electronic circuits (Electronic Circuits). In order to quickly dissipate heat to the atmosphere, a heat sink (Heat Sink or Heat Spreader) is usually arranged in the semiconductor package structure. The heat sink is usually bonded to the back of the chip by a heat sink, so that the heat sink and the heat sink can escape the semiconductor The heat generated by the chip.

如圖1A所示,習知散熱型之半導體封裝件1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10之置晶區A(如圖1A’所示)上,再將一散熱件13以其頂片130藉由導熱層12結合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131藉由黏著層14架設於該封裝基板10上。接著,進行封裝壓模作業,以供封裝膠體(圖略)包覆該半導體晶片11及散熱件13,並使該散熱件13之頂片130外露出封裝膠體而直接與大氣接觸。 As shown in FIG. 1A, the conventional heat-dissipating semiconductor package 1 is made by first placing a semiconductor chip 11 with its active surface 11a in a flip-chip bonding method (that is, through conductive bumps 110 and primer 111). On the wafer placement area A of the substrate 10 (as shown in FIG. 1A'), a heat dissipation element 13 is bonded to the non-acting surface 11b of the semiconductor chip 11 with its top sheet 130 through the thermally conductive layer 12, and the heat dissipation element The supporting legs 131 of 13 are erected on the packaging substrate 10 via the adhesive layer 14. Then, a packaging press molding operation is performed to provide a packaging compound (not shown in the figure) to cover the semiconductor chip 11 and the heat sink 13, and to expose the packaging compound to the top sheet 130 of the heat sink 13 to directly contact the atmosphere.

於運作時,該半導體晶片11所產生之熱能係經由該非作用面11b、導熱層12而傳導至該散熱件13以散熱至該半導體封裝件1之外部。 During operation, the heat energy generated by the semiconductor chip 11 is conducted to the heat sink 13 via the non-acting surface 11b and the heat conducting layer 12 to dissipate heat to the outside of the semiconductor package 1.

惟,習知半導體封裝件1中,該半導體晶片11於設置後之輪廓係對應該置晶區A之邊界(如圖1A’所示),使該散熱件13及該半導體晶片11兩者因與該導熱層12具有極大之熱膨脹係數差異(CTE Mismatch)而所產生之應力無法分散,導致該半導體封裝件1發生變形的情況(即翹曲),如圖1B所示,致使該散熱件13之頂片130與變形之導熱層12’(或與該半導體晶片11)之間容易發生脫層(如圖1B所示之間隙t),不僅造成導熱效果下降,且會降低該半導體封裝件1之信賴性。 However, in the conventional semiconductor package 1, the contour of the semiconductor chip 11 after installation corresponds to the boundary of the crystal placement area A (as shown in FIG. 1A'), so that both the heat sink 13 and the semiconductor chip 11 are different from each other. The thermal expansion coefficient difference (CTE Mismatch) with the thermally conductive layer 12 is extremely large, and the stress generated cannot be dispersed, causing the semiconductor package 1 to deform (ie warp), as shown in FIG. 1B, resulting in the heat sink 13 The top sheet 130 and the deformed thermally conductive layer 12' (or the semiconductor chip 11) are prone to delamination (the gap t shown in FIG. 1B), which not only reduces the thermal conductivity, but also reduces the semiconductor package 1 The reliability.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the various problems of the above-mentioned conventional technology has actually become a problem that the industry urgently needs to overcome.

鑑於上述習知技術之種種缺失,本發明係提供一種電子封裝件,係包括:承載件,係定義有置晶區;電子元件,係設於該承載件之置晶區內並電性連接該承載件,其中,該電子元件設置於該承載件上之輪廓並未對應該置晶區之邊界;結合層,係設該承載件上且位於該置晶區外,以環繞該電子元件;以及散熱件,係結合該結合層以設於該承載件上並遮蓋該電子元件。 In view of the various deficiencies of the above-mentioned conventional technologies, the present invention provides an electronic package, which includes: a carrier, which defines a die placement area; and an electronic component, which is arranged in the die placement area of the carrier and is electrically connected to the A carrier, wherein the outline of the electronic component disposed on the carrier does not correspond to the boundary of the die placement region; the bonding layer is provided on the carrier and located outside the die placement region to surround the electronic component; and The heat dissipation element is combined with the bonding layer to be arranged on the carrier and cover the electronic element.

本發明亦提供一種電子封裝件之製法,係包括:提供一定義有置晶區之承載件;將電子元件設於該承載件之置晶區內並電性連接該承載件,且將結合層設於該承載件之置晶區外並環繞該電子元件,其中,該電子元件設置於該 承載件上之輪廓並未對應該置晶區之邊界;以及將散熱件結合該結合層,使該散熱件設於該承載件上並遮蓋該電子元件。 The present invention also provides a method for manufacturing an electronic package, which includes: providing a carrier defining a die placement area; arranging electronic components in the die placement area of the carrier and electrically connecting the carrier, and attaching a bonding layer Is arranged outside the chip placement area of the carrier and surrounds the electronic element, wherein the electronic element is arranged on the The contour on the carrier does not correspond to the boundary of the crystal placement area; and the heat dissipation element is combined with the bonding layer so that the heat dissipation element is disposed on the carrier and covers the electronic component.

前述之電子封裝件及其製法中,該置晶區為矩形,且該電子元件係呈四邊形輪廓,以令該電子元件之角落位於該置晶區之邊線上。例如,該電子元件之角落係對準該結合層。 In the aforementioned electronic package and its manufacturing method, the die placement area is rectangular, and the electronic component has a quadrilateral outline, so that the corner of the electronic component is located on the edge of the die placement area. For example, the corners of the electronic component are aligned with the bonding layer.

前述之電子封裝件及其製法中,該結合層係為具有複數缺口之環體,其中,該複數缺口之位置係相互對齊或未對齊。例如,該電子元件係呈矩形輪廓,其角落未對準該缺口。或者,該環體係呈矩形,且該複數缺口係分別位於該環體之不同環邊上,較佳者,該環體之單一環邊上之缺口之尺寸係為該環邊之尺寸的1/10。 In the aforementioned electronic package and its manufacturing method, the bonding layer is a ring with a plurality of notches, wherein the positions of the plurality of notches are aligned or not aligned with each other. For example, the electronic component has a rectangular outline, and its corners are not aligned with the notch. Alternatively, the ring system is rectangular, and the plurality of notches are respectively located on different ring sides of the ring body. Preferably, the size of the notch on a single ring side of the ring body is 1/the size of the ring side 10.

前述之電子封裝件及其製法中,該結合層係包含相分離之第一區段與第二區段,以於該第一區段與該第二區段之間形成複數缺口,且該第一區段之形狀與該第二區段之形狀不相同。例如,該承載件用以接觸結合該第一區段之面積與該承載件用以接觸結合該第二區段之面積係相同。 In the aforementioned electronic package and its manufacturing method, the bonding layer includes a first section and a second section that are separated to form a plurality of gaps between the first section and the second section, and the first section The shape of one section is different from the shape of the second section. For example, the area of the carrier for contacting and joining the first section is the same as the area of the carrier for contacting and joining the second section.

由上可知,本發明之電子封裝件及其製法中,主要藉由該電子元件於設置於該承載件上後之輪廓未對應該置晶區之邊界,使該承載件能有效平衡其上應力分佈,故相較於習知技術,該電子封裝件能維持該散熱件與該承載件之間的距離,以避免該散熱件與該電子元件之間發生脫層,進而能提升該電子封裝件之信賴性。 It can be seen from the above that in the electronic package and the manufacturing method of the present invention, the outline of the electronic component after being placed on the carrier does not correspond to the boundary of the crystal placement region, so that the carrier can effectively balance the stress on it Therefore, compared with the prior art, the electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic component, thereby improving the electronic package The reliability.

再者,本發明藉由該缺口之位置不會朝向該電子元件之角落之設計,以利於提升該散熱件的覆蓋率及平面度,因而能有效降低該電子封裝件之翹曲程度。 Furthermore, in the present invention, the position of the notch does not face the corner of the electronic component, so as to improve the coverage and flatness of the heat sink, thereby effectively reducing the degree of warpage of the electronic package.

又,本發明藉由該結合層之單一環邊上之缺口之尺寸係為該環邊之尺寸的1/10之設計,以利於該承載件平衡其上之應力分佈,因而能有效降低該電子封裝件之翹曲程度。 In addition, in the present invention, the size of the notch on the single ring edge of the bonding layer is designed to be 1/10 of the size of the ring edge, so as to facilitate the load-bearing member to balance the stress distribution thereon, thereby effectively reducing the electrons. The degree of warpage of the package.

另外,本發明藉由該電子元件於設置於該承載件上後之輪廓未對應該置晶區之邊界,以利於該承載件之線路佈設能有效搭配特殊設計之電子元件,因而能增強該電子元件之運算能力。 In addition, in the present invention, the outline of the electronic component after being placed on the carrier does not correspond to the boundary of the crystal placement region, so that the circuit layout of the carrier can effectively match the specially designed electronic components, thereby enhancing the electronic components. The computing power of the component.

1:半導體封裝件 1: Semiconductor package

10:封裝基板 10: Package substrate

11:半導體晶片 11: Semiconductor wafer

11a,21a:作用面 11a, 21a: action surface

11b,21b:非作用面 11b, 21b: non-acting surface

110,210:導電凸塊 110, 210: conductive bump

111,211:底膠 111,211: primer

12,12’,22:導熱層 12,12’,22: Thermally conductive layer

13,23:散熱件 13,23: Heat sink

130:頂片 130: top piece

131,231:支撐腳 131,231: Support feet

14:黏著層 14: Adhesive layer

2:電子封裝件 2: Electronic package

20:承載件 20: Carrier

21:電子元件 21: Electronic components

230:散熱體 230: heat sink

24,34:結合層 24, 34: Bonding layer

24a,24b,24c,24d:環邊 24a, 24b, 24c, 24d: ring edge

240,340:缺口 240,340: gap

341:第一區段 341: The first section

342:第二區段 342: Second Section

A:置晶區 A: Placement area

D,R:面積 D, R: area

L:邊線 L: Sideline

t:間隙 t: gap

X1,X2:對角線 X1, X2: diagonal

Y:軸線 Y: axis

圖1A係為習知半導體封裝件之剖視示意圖。 FIG. 1A is a schematic cross-sectional view of a conventional semiconductor package.

圖1A’係為圖1A之上視平面示意圖。 Fig. 1A' is a schematic top plan view of Fig. 1A.

圖1B係為習知半導體封裝件之不良狀態之剖視示意圖。 FIG. 1B is a schematic cross-sectional view of a bad state of a conventional semiconductor package.

圖2A至圖2B係為本發明之電子封裝件之製法之剖視示意圖。 2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.

圖3A係為圖2A之上視平面示意圖。 Fig. 3A is a schematic top plan view of Fig. 2A.

圖3B及圖3C係為圖3A之不同態樣之上視平面示意圖。 3B and 3C are schematic top plan views of different aspects of FIG. 3A.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中 所引用之如「上」、「第一」、「第二」、「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings in this manual are only used to match the content disclosed in the manual for the understanding and reading of those who are familiar with the art, and are not intended to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment should still fall within the original The technical content disclosed by the invention can be covered. At the same time, in this manual The quoted terms such as "on", "first", "second", "one", etc. are also only for ease of description, and are not used to limit the scope of implementation of the present invention, and changes in their relative relationships Or adjustments, without substantive changes to the technical content, should also be regarded as the scope of the present invention can be implemented.

圖2A至圖2B係為本發明之電子封裝件2之製法之剖面示意圖。 2A to 2B are schematic cross-sectional views of the manufacturing method of the electronic package 2 of the present invention.

如圖2A所示,於一承載件20上設置至少一電子元件21及形成結合層24,以令該電子元件21電性連接該承載件20,其中,該承載件20係定義有至少一用以設置該電子元件21之置晶區A(如圖3A所示),且令該電子元件21於設置於該承載件20上後之輪廓未對應該置晶區A之邊界。 As shown in FIG. 2A, at least one electronic component 21 is disposed on a carrier 20 and a bonding layer 24 is formed so that the electronic component 21 is electrically connected to the carrier 20, wherein the carrier 20 is defined with at least one function The chip placement area A of the electronic component 21 (as shown in FIG. 3A) is set, and the outline of the electronic component 21 after being placed on the carrier 20 does not correspond to the boundary of the chip placement area A.

於本實施例中,該承載件20例如為具有核心層與線路結構之封裝基板(substrate)或無核心層(coreless)之線路結構,其係於介電材上形成線路層,如扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL)。例如,該承載件20之置晶區A係定義為矩形,如圖3A所示之正方形。應可理解地,該承載件20亦可為其它可供承載如晶片等電子元件之承載結構,例如導線架(lead frame)或矽中介板(silicon interposer),並不限於上述。 In this embodiment, the carrier 20 is, for example, a package substrate with a core layer and a circuit structure or a coreless circuit structure, which forms a circuit layer on a dielectric material, such as fan-out ( Fan out) type redistribution layer (RDL). For example, the die placement area A of the carrier 20 is defined as a rectangle, such as a square as shown in FIG. 3A. It should be understood that the supporting member 20 can also be other supporting structures capable of supporting electronic components such as chips, such as a lead frame or a silicon interposer, and is not limited to the above.

再者,該電子元件21係為主動元件、被動元件或其二者組合等,其呈如矩形之四邊形片體(如圖3A所示之正方形片體),以令該電子元件21相對該置晶區A偏轉配置,如轉90度角,使該電子元件21之角落位於該置晶區A之邊線L上而未對應配合坐落於該置晶區A之角落處,其中,該主動元件係例如為半導體晶片,且該被動元件係例如為電阻、電容及電感。例如,該電子元件21具有相對之作用面21a及非作用面21b,且該作用面21a設有複數導電凸塊210,使該電子元件21藉該些導電凸塊210以覆晶方式結合並電性連接該承載件20,並可以底膠211包覆該些導電凸塊210。然而,有關該電子元件21連接該承載件20之方式繁多,如打線封裝方式,並不限於上述。 Furthermore, the electronic component 21 is an active component, a passive component, or a combination of the two, etc., which has a rectangular quadrilateral sheet body (a square sheet body as shown in FIG. 3A), so that the electronic component 21 is positioned relative to the The deflection configuration of the die region A, such as turning a 90 degree angle, makes the corner of the electronic component 21 located on the edge line L of the die placement region A without correspondingly located at the corner of the die placement region A, wherein the active component is For example, it is a semiconductor chip, and the passive element is, for example, a resistor, a capacitor, and an inductor. For example, the electronic component 21 has an opposite active surface 21a and a non-active surface 21b, and the active surface 21a is provided with a plurality of conductive bumps 210, so that the electronic component 21 is combined and electrically connected by the conductive bumps 210 in a flip chip manner. The carrier 20 is sexually connected, and the conductive bumps 210 can be covered with a primer 211. However, there are many ways for the electronic component 21 to connect to the carrier 20, such as wire bonding and packaging, which are not limited to the above.

又,該電子元件21之非作用面21b上可形成如導熱介面材(Thermal Interface Material,簡稱TIM)或一般導熱膠之導熱層22。 In addition, the non-acting surface 21b of the electronic component 21 may be formed with a thermally conductive layer 22 such as a thermal interface material (TIM) or a general thermally conductive adhesive.

另外,該結合層24係為如膠材之黏著層,其位於於該承載件20之邊緣,以環繞該電子元件21之外圍,使該結合層24呈現具有複數缺口240之矩形環體,且該複數缺口240係形成於四個環邊24a,24b,24c,24d之其中兩者上,如圖3A及圖3B所示。例如,該些缺口240係形成於相對之兩環邊24a,24b上,且該些缺口240之位置可相互對齊(如圖3A所示之同一軸線Y)或未對齊(如圖3B所示),以令該電子元件21之角落係對準該結合層24,而不會對準該些缺口240,即該電子元件21之對角線X1,X2不會延伸通過該些缺口240。較佳地,於該結合層24之具有該些缺口240之兩環邊24a,24b之其中一者中,如圖3B所示,該承載件20對應外露於該缺口240的面積(長度)R係為該承載件20用以接觸結合該環邊24a之面積(長度)D的1/10。 In addition, the bonding layer 24 is an adhesive layer such as glue, which is located at the edge of the carrier 20 to surround the periphery of the electronic component 21, so that the bonding layer 24 presents a rectangular ring with a plurality of notches 240, and The plurality of notches 240 are formed on two of the four ring edges 24a, 24b, 24c, and 24d, as shown in FIGS. 3A and 3B. For example, the notches 240 are formed on the two opposite ring edges 24a, 24b, and the positions of the notches 240 can be aligned with each other (the same axis Y as shown in FIG. 3A) or not aligned (as shown in FIG. 3B) , So that the corners of the electronic component 21 are aligned with the bonding layer 24 and not aligned with the notches 240, that is, the diagonal lines X1, X2 of the electronic component 21 will not extend through the notches 240. Preferably, in one of the two ring sides 24a, 24b of the bonding layer 24 having the notches 240, as shown in FIG. 3B, the supporting member 20 corresponds to the area (length) R exposed to the notch 240 It is 1/10 of the area (length) D of the carrying member 20 for contacting and joining the ring side 24a.

如圖2B所示,將一散熱件23結合該結合層24,以設於該承載件20上,且該散熱件23藉由導熱層22設於該電子元件21上以遮蓋該電子元件21。 As shown in FIG. 2B, a heat dissipation element 23 is combined with the bonding layer 24 to be disposed on the carrier 20, and the heat dissipation element 23 is disposed on the electronic component 21 through the thermally conductive layer 22 to cover the electronic component 21.

於本實施例中,該散熱件23係具有一散熱體230與複數設於該散熱體230下側之支撐腳231,該散熱體230係為散熱片並以下側接觸該導熱層22,且該支撐腳231係以其端部結合該結合層24上。例如,該散熱件23係以壓合方式設於該承載件20上,且該壓合溫度(即該承載件20之耐熱溫度)係至少為120℃,最佳為125℃。 In this embodiment, the heat sink 23 has a heat sink 230 and a plurality of supporting legs 231 disposed on the lower side of the heat sink 230. The heat sink 230 is a heat sink and contacts the heat conducting layer 22 on the lower side, and The supporting legs 231 are connected to the bonding layer 24 with their ends. For example, the heat dissipating member 23 is arranged on the supporting member 20 in a pressing manner, and the pressing temperature (that is, the heat-resistant temperature of the supporting member 20) is at least 120°C, preferably 125°C.

再者,該散熱體230與該支撐腳231係為一體成形;於其它實施例中,該散熱體230與該支撐腳231可為分開製作,而非一體成形。應可理解地,有關該散熱件之種類繁多,並不限於上述。 Furthermore, the heat sink 230 and the support leg 231 are integrally formed; in other embodiments, the heat sink 230 and the support leg 231 may be manufactured separately instead of being integrally formed. It should be understood that there are many types of the heat sink, which are not limited to the above.

又,該結合層24之佈設面積係可依需求設計。例如,該結合層34可包含相分離之第一區段341與第二區段342,如圖3C所示,以於該第一區段341 端處與該第二區段342端處之間形成複數缺口340,且該第一區段341之形狀與該第二區段342之形狀不相同。較佳者,該承載件20用以接觸結合該第一區段341之面積與該承載件20用以接觸結合該第二區段342之面積係相同。 In addition, the layout area of the bonding layer 24 can be designed according to requirements. For example, the bonding layer 34 may include a first section 341 and a second section 342 separated from each other, as shown in FIG. 3C, so that the first section 341 A plurality of notches 340 are formed between the end and the end of the second section 342, and the shape of the first section 341 is different from the shape of the second section 342. Preferably, the area of the supporting member 20 for contacting and joining the first section 341 is the same as the area of the supporting member 20 for contacting and joining the second section 342.

本發明之製法主要藉由該電子元件21相對該置晶區A偏轉配置,以令該電子元件21於設置於該承載件20上後之輪廓未對應該置晶區A之邊界,使該承載件20能有效平衡其上應力分佈,故相較於習知技術,該電子封裝件2能維持該散熱體230(或該散熱件23)與該承載件20之間的距離,以避免該散熱體230(或該散熱件23)與該導熱層22(或該電子元件21)之間發生脫層(delamination),進而能提升該電子封裝件2之信賴性。應可理解地,亦可改變該電子元件21之外觀輪廓,使其於設置於該承載件20上後之輪廓未對應該置晶區A之邊界,如菱形之四邊形晶片本體。 The manufacturing method of the present invention mainly uses the deflection arrangement of the electronic component 21 relative to the die placement area A, so that the contour of the electronic component 21 after being placed on the carrier 20 does not correspond to the boundary of the die placement area A, so that the carrier The component 20 can effectively balance the stress distribution thereon, so compared to the prior art, the electronic package 2 can maintain the distance between the heat sink 230 (or the heat sink 23) and the carrier 20 to avoid the heat dissipation Delamination occurs between the body 230 (or the heat sink 23) and the thermally conductive layer 22 (or the electronic component 21), which can improve the reliability of the electronic package 2. It should be understood that the appearance contour of the electronic component 21 can also be changed so that the contour after being disposed on the carrier 20 does not correspond to the boundary of the crystal placement area A, such as a diamond-shaped quadrilateral chip body.

再者,藉由該缺口240,340之位置不會朝向該電子元件21之角落之設計,以利於提升該散熱體230(或該散熱件23)的覆蓋率及平面度,因而能有效降低該電子封裝件2之翹曲程度。 Furthermore, the design of the notches 240 and 340 not facing the corners of the electronic component 21 helps to improve the coverage and flatness of the heat sink 230 (or the heat sink 23), thereby effectively reducing the electronic package The degree of warpage of part 2.

又,藉由該結合層24之單一環邊24a上之缺口240之尺寸(如面積R或長度)係為該環邊24a之尺寸(如面積D或長度)的1/10之設計,以利於該承載件20平衡其上之應力分佈,因而能有效降低該電子封裝件2之翹曲程度。 In addition, the size (such as area R or length) of the notch 240 on the single ring side 24a of the bonding layer 24 is designed to be 1/10 of the size (such as area D or length) of the ring side 24a, so as to facilitate The carrier 20 balances the stress distribution thereon, so that the warpage of the electronic package 2 can be effectively reduced.

另外,藉由該電子元件21於設置於該承載件20上後之輪廓未對應該置晶區A之邊界之設計,以利於該承載件20之線路佈設有效搭配特殊設計之電子元件21,因而能增強該電子元件21之運算能力。 In addition, the outline of the electronic component 21 after being disposed on the carrier 20 does not correspond to the design of the boundary of the crystal placement area A, which facilitates the circuit layout of the carrier 20 to effectively match the specially designed electronic component 21. The computing power of the electronic component 21 can be enhanced.

本發明復提供一種電子封裝件2,係包括:一承載件20、至少一電子元件21、一結合層24,34以及一散熱件23。 The present invention further provides an electronic package 2, which includes: a carrier 20, at least one electronic component 21, a bonding layer 24, 34, and a heat sink 23.

所述之承載件20係具有至少一置晶區A。 The carrier 20 has at least one crystal placement area A.

所述之電子元件21係設於該承載件20上且位於該置晶區A內並電性連接該承載件20,其中,該電子元件21於設置於該承載件20上後之輪廓未對應該置晶區A之邊界。 The electronic component 21 is disposed on the carrier 20 and is located in the crystal placement area A and electrically connected to the carrier 20, wherein the contour of the electronic component 21 after being disposed on the carrier 20 is not aligned The boundary of the crystal area A should be set.

所述之結合層24,34係形成該承載件20上且位於該置晶區A外,以環繞該電子元件21。 The bonding layers 24 and 34 are formed on the carrier 20 and located outside the crystal placement area A to surround the electronic component 21.

所述之散熱件23係結合該結合層24,34以設於該承載件20上並遮蓋該電子元件21。 The heat sink 23 is combined with the bonding layers 24 and 34 to be arranged on the carrier 20 and cover the electronic component 21.

於一實施例中,該置晶區A為矩形,且該電子元件21係呈四邊形輪廓,以令該電子元件21之角落位於該置晶區A之邊線L上。例如,該電子元件21之角落係對準該結合層24,34。 In one embodiment, the die placement area A is rectangular, and the electronic component 21 has a quadrilateral profile, so that the corners of the electronic component 21 are located on the edge line L of the die placement area A. For example, the corners of the electronic component 21 are aligned with the bonding layers 24 and 34.

於一實施例中,該結合層24,34係為具有複數缺口240,340之環體,且該複數缺口240,340之位置係相互對齊或未對齊。例如,該電子元件21係呈矩形輪廓,其角落未對準該缺口240,340。或者,該環體係呈矩形,且該複數缺口240係分別位於該環體之不同環邊24a,24b上,較佳者,該環體之單一環邊24a上之缺口240之尺寸係為該環邊24a之尺寸的1/10。 In one embodiment, the bonding layer 24, 34 is a ring with a plurality of notches 240, 340, and the positions of the plurality of notches 240, 340 are aligned or not aligned with each other. For example, the electronic component 21 has a rectangular outline, and its corners are not aligned with the notches 240 and 340. Alternatively, the ring system is rectangular, and the plurality of notches 240 are respectively located on different ring sides 24a, 24b of the ring body. Preferably, the size of the notch 240 on a single ring side 24a of the ring body is that of the ring. 1/10 of the size of side 24a.

於一實施例中,該結合層34係包含相分離之第一區段341與第二區段342,以於該第一區段341端處與該第二區段342端處之間形成複數缺口340,且該第一區段341之形狀與該第二區段342之形狀不相同。例如,該承載件20用以接觸結合該第一區段341之面積與該承載件20用以接觸結合該第二區段342之面積係相同。 In one embodiment, the bonding layer 34 includes a first section 341 and a second section 342 separated from each other, so as to form a plurality of sections between the end of the first section 341 and the end of the second section 342 There is a gap 340, and the shape of the first section 341 is different from the shape of the second section 342. For example, the area of the supporting member 20 for contacting and joining the first section 341 is the same as the area of the supporting member 20 for contacting and joining the second section 342.

綜上所述,本發明之電子封裝件及其製法,係藉由該電子元件於設置於該承載件後之輪廓未對應該置晶區之邊界,以平衡該電子封裝件之整體應力分佈,故該電子封裝件能維持該散熱件與該承載件之間的距離,以避免該散熱件與該電子元件之間發生脫層,進而能提升該電子封裝件之信賴性。 In summary, the electronic package and its manufacturing method of the present invention balance the overall stress distribution of the electronic package by the fact that the outline of the electronic component after being disposed on the carrier does not correspond to the boundary of the crystal placement region. Therefore, the electronic package can maintain the distance between the heat sink and the carrier, so as to avoid delamination between the heat sink and the electronic component, thereby improving the reliability of the electronic package.

再者,因該缺口之位置不會朝向該電子元件之角落,故能提升該散熱件的覆蓋率及平面度,因而能有效降低該電子封裝件之翹曲程度。 Furthermore, since the position of the notch does not face the corner of the electronic component, the coverage and flatness of the heat sink can be improved, and the warpage of the electronic package can be effectively reduced.

又,藉由該結合層之單一環邊上之缺口之尺寸係為該環邊之尺寸的1/10之設計,以利於平衡該承載件上之應力分佈,因而能有效降低該電子封裝件之翹曲程度。 In addition, the size of the notch on the single ring edge of the bonding layer is designed to be 1/10 of the size of the ring edge, which is beneficial to balance the stress distribution on the carrier, thereby effectively reducing the size of the electronic package. The degree of warpage.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone familiar with this technique can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

20:承載件 20: Carrier

21:電子元件 21: Electronic components

24:結合層 24: Bonding layer

240:缺口 240: gap

A:置晶區 A: Placement area

L:邊線 L: Sideline

X1,X2:對角線 X1, X2: diagonal

Y:軸線 Y: axis

Claims (18)

一種電子封裝件,係包括:承載件,係定義有置晶區;電子元件,係設於該承載件之置晶區內並電性連接該承載件,其中,該電子元件設置於該承載件上之輪廓未對應該置晶區之邊界;結合層,係為具有複數缺口之環體,其設該承載件上且位於該置晶區外,以環繞該電子元件;以及散熱件,係結合該結合層以設於該承載件上並遮蓋該電子元件。 An electronic package includes: a carrier, which defines a die placement area; an electronic component, which is arranged in the die placement area of the carrier and is electrically connected to the carrier, wherein the electronic component is placed on the carrier The outline on the top does not correspond to the boundary of the crystal placement area; the bonding layer is a ring with a plurality of notches, which is placed on the carrier and located outside the crystal placement area to surround the electronic component; and the heat sink is bonded The bonding layer is arranged on the carrier and covers the electronic element. 如請求項1所述之電子封裝件,其中,該置晶區為矩形,且該電子元件係呈四邊形輪廓,以令該電子元件之角落位於該置晶區之邊線上。 The electronic package according to claim 1, wherein the die placement area is rectangular, and the electronic component has a quadrilateral outline, so that the corner of the electronic component is located on the edge of the die placement area. 如請求項2所述之電子封裝件,其中,該電子元件之角落係對準該結合層。 The electronic package according to claim 2, wherein the corner of the electronic component is aligned with the bonding layer. 如請求項1所述之電子封裝件,其中,該複數缺口之位置係相互對齊或未對齊。 The electronic package according to claim 1, wherein the positions of the plurality of notches are aligned or misaligned with each other. 如請求項1所述之電子封裝件,其中,該電子元件係呈矩形輪廓,其角落未對準該缺口。 The electronic package according to claim 1, wherein the electronic component has a rectangular outline, and its corners are not aligned with the notch. 如請求項1所述之電子封裝件,其中,該環體係呈矩形,且該複數缺口係分別位於該環體之不同環邊上。 The electronic package according to claim 1, wherein the ring system is rectangular, and the plurality of notches are respectively located on different ring sides of the ring body. 如請求項6所述之電子封裝件,其中,該環體之單一環邊上之缺口之尺寸係為該環邊之尺寸的1/10。 The electronic package according to claim 6, wherein the size of the notch on the single ring side of the ring body is 1/10 of the size of the ring side. 如請求項1所述之電子封裝件,其中,該結合層係包含相分離之第一區段與第二區段,以於該第一區段與該第二區段之間形成複數缺口,且該第一區段之形狀與該第二區段之形狀不相同。 The electronic package according to claim 1, wherein the bonding layer includes a first section and a second section separated from each other, so as to form a plurality of gaps between the first section and the second section, And the shape of the first section is different from the shape of the second section. 如請求項8所述之電子封裝件,其中,該承載件用以接觸結合該第一區段之面積與該承載件用以接觸結合該第二區段之面積係相同。 The electronic package according to claim 8, wherein the area of the carrier for contacting and joining the first section is the same as the area of the carrier for contacting and joining the second section. 一種電子封裝件之製法,係包括:提供一定義有置晶區之承載件;將電子元件設於該承載件之置晶區內並電性連接該承載件,且將結合層設於該承載件之置晶區外並環繞該電子元件,其中,該電子元件設置於該承載件上之輪廓並未對應該置晶區之邊界,且該結合層係為具有複數缺口之環體;以及將散熱件結合該結合層,使該散熱件設於該承載件上並遮蓋該電子元件。 A manufacturing method of an electronic package includes: providing a carrier defining a die placement area; arranging electronic components in the die placement area of the carrier and electrically connecting the carrier, and arranging a bonding layer on the carrier The chip placement area of the device is outside and surrounds the electronic device, wherein the outline of the electronic device disposed on the carrier does not correspond to the boundary of the chip placement area, and the bonding layer is a ring body with a plurality of notches; and The heat dissipation element is combined with the bonding layer, so that the heat dissipation element is arranged on the carrier and covers the electronic element. 如請求項10所述之電子封裝件之製法,其中,該置晶區為矩形,且該電子元件係呈四邊形輪廓,以令該電子元件之角落位於該置晶區之邊線上。 The method for manufacturing an electronic package according to claim 10, wherein the die placement area is rectangular, and the electronic component has a quadrilateral outline, so that the corner of the electronic component is located on the edge of the die placement area. 如請求項11所述之電子封裝件之製法,其中,該電子元件之角落係對準該結合層。 The method for manufacturing an electronic package according to claim 11, wherein the corner of the electronic component is aligned with the bonding layer. 如請求項10所述之電子封裝件之製法,其中,該複數缺口之位置係相互對齊或未對齊。 The method for manufacturing an electronic package according to claim 10, wherein the positions of the plurality of notches are aligned or misaligned with each other. 如請求項10所述之電子封裝件之製法,其中,該電子元件係呈矩形輪廓,其角落未對準該缺口。 The method for manufacturing an electronic package according to claim 10, wherein the electronic component has a rectangular outline, and its corners are not aligned with the notch. 如請求項10所述之電子封裝件之製法,其中,該環體係呈矩形,且該複數缺口係分別位於該環體之不同環邊上。 The method for manufacturing an electronic package according to claim 10, wherein the ring system is rectangular, and the plurality of notches are respectively located on different ring sides of the ring body. 如請求項15所述之電子封裝件之製法,其中,該環體之單一環邊上之缺口之尺寸係為該環邊之尺寸的1/10。 The method for manufacturing an electronic package according to claim 15, wherein the size of the notch on a single ring side of the ring body is 1/10 of the size of the ring side. 如請求項10所述之電子封裝件之製法,其中,該結合層係包含相分離之第一區段與第二區段,以於該第一區段與該第二區段之間形成複數缺口,且該第一區段之形狀與該第二區段之形狀不相同。 The method for manufacturing an electronic package according to claim 10, wherein the bonding layer includes a first section and a second section separated from each other, so as to form a plurality of parts between the first section and the second section Notches, and the shape of the first section is different from the shape of the second section. 如請求項17所述之電子封裝件之製法,其中,該承載件用以接觸結合該第一區段之面積與該承載件用以接觸結合該第二區段之面積係相同。 The method for manufacturing an electronic package according to claim 17, wherein the area of the carrier for contacting and joining the first section is the same as the area of the carrier for contacting and joining the second section.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150228553A1 (en) * 2012-08-29 2015-08-13 Broadcom Corporation Hybrid thermal interface material for ic packages with integrated heat spreader
WO2018063213A1 (en) * 2016-09-29 2018-04-05 Intel Corporation Methods of forming flexure based cooling solutions for package structures
TW202044496A (en) * 2019-05-15 2020-12-01 聯發科技股份有限公司 Electronic package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150228553A1 (en) * 2012-08-29 2015-08-13 Broadcom Corporation Hybrid thermal interface material for ic packages with integrated heat spreader
WO2018063213A1 (en) * 2016-09-29 2018-04-05 Intel Corporation Methods of forming flexure based cooling solutions for package structures
TW202044496A (en) * 2019-05-15 2020-12-01 聯發科技股份有限公司 Electronic package

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