TWI573230B - Package structure and its package substrate - Google Patents

Package structure and its package substrate Download PDF

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Publication number
TWI573230B
TWI573230B TW104120682A TW104120682A TWI573230B TW I573230 B TWI573230 B TW I573230B TW 104120682 A TW104120682 A TW 104120682A TW 104120682 A TW104120682 A TW 104120682A TW I573230 B TWI573230 B TW I573230B
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package
layer
circuit
circuit structure
dielectric layer
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TW104120682A
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Chinese (zh)
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TW201701415A (en
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游進暐
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矽品精密工業股份有限公司
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Priority to TW104120682A priority Critical patent/TWI573230B/en
Priority to CN201510402300.7A priority patent/CN106298727B/en
Publication of TW201701415A publication Critical patent/TW201701415A/en
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Publication of TWI573230B publication Critical patent/TWI573230B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

封裝件及其封裝基板 Package and its package substrate

本發明係有關一種封裝基板,尤指一種半導體封裝製程所用之封裝基板及封裝件。 The invention relates to a package substrate, in particular to a package substrate and a package used in a semiconductor package process.

於半導體封裝發展中,長期使用導線架(lead frame)作為承載主動元件之承載件,其主要原因係其具有較低製造成本與較高可靠度之優點。然而,隨著電子產業的蓬勃發展,電子產品在型態上趨於輕薄短小,在功能上則朝高性能、高功能、高速化的研發方向。因此,為滿足半導體裝置之高積集度(Integration)及微型化(Miniaturization)需求,故封裝製程漸以具有高密度及細間距之線路的封裝基板取代導線架。 In the development of semiconductor packaging, the long-term use of a lead frame as a carrier for carrying an active component is mainly due to its low manufacturing cost and high reliability. However, with the rapid development of the electronics industry, electronic products tend to be light and thin in terms of type, and in terms of functions, they are oriented toward high-performance, high-function, and high-speed research and development. Therefore, in order to meet the high integration and miniaturization requirements of semiconductor devices, the packaging process is gradually replacing the lead frame with a package substrate having a high density and fine pitch line.

如第1A圖所示,習知封裝基板1係包含介電結構10、設於該介電結構10上之第一線路層11以及第二線路層12,且該介電結構10具有核心層100、分別設於該核心層100相對兩側之複數第一介電層101與複數第二介電層102,且該核心層100中具有複數導電通孔120以電性連接該第一及第二線路層11,12。於封裝製程時,係將半導體主動元件13設於該第一介電層101上並以打線方式(或覆晶 方式)電性連接該第一線路層11,再以封裝膠體14包覆該半導體主動元件13以形成封裝件。 As shown in FIG. 1A, the conventional package substrate 1 includes a dielectric structure 10, a first wiring layer 11 and a second wiring layer 12 disposed on the dielectric structure 10, and the dielectric structure 10 has a core layer 100. And a plurality of first dielectric layers 101 and a plurality of second dielectric layers 102 respectively disposed on opposite sides of the core layer 100, and the plurality of conductive vias 120 are electrically connected to the first and second layers Circuit layers 11, 12. In the packaging process, the semiconductor active device 13 is disposed on the first dielectric layer 101 and is wire-bonded (or flip-chip) The first circuit layer 11 is electrically connected, and the semiconductor active device 13 is covered with an encapsulant 14 to form a package.

惟,習知封裝基板1之厚度極薄,並於製程中呈現整版面態樣,且該第一與第二介電層101,102的材質及厚度係為相同,故於封裝過程中,該封裝基板1於溫度循環(temperature cycle)時,其與該半導體主動元件13(或封裝膠體14)間容易因熱膨脹係數差異(CTE Mismatch),而使該封裝基板1容易發生翹曲(warpage),如上凸情況(第1A圖所示之虛線輪廓)或下凹情況(第1B圖所示之封裝基板1’之虛線輪廓),導致封裝件平面度不佳,以致於後續接置電路板時,會發生不沾錫(Non wetting)之問題,而使電性連接不佳。 However, the thickness of the conventional package substrate 1 is extremely thin and presents a full-faceted surface pattern in the process, and the materials and thicknesses of the first and second dielectric layers 101, 102 are the same, so in the packaging process, the package substrate 1 in the temperature cycle, it is easy to warp the package substrate 1 due to the difference in thermal expansion coefficient (CTE Mismatch) between the semiconductor active device 13 (or the encapsulant 14). Case (dashed outline shown in Fig. 1A) or recessed condition (dashed outline of package substrate 1' shown in Fig. 1B), resulting in poor planarity of the package, so that it occurs when the board is subsequently connected Non-sticking (Non wetting) problems, but the electrical connection is not good.

再者,翹曲的情況亦會造成該半導體主動元件13發生碎裂,致使產品良率降低。 Moreover, the warpage also causes the semiconductor active device 13 to be chipped, resulting in a decrease in product yield.

又,若增加介電層之厚度,雖可減緩翹曲的情況,但會增加該封裝基板1之厚度,因而不符合輕薄短小的需求。 Further, if the thickness of the dielectric layer is increased, the warpage can be slowed down, but the thickness of the package substrate 1 is increased, so that it does not meet the requirements of lightness, thinness, and shortness.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the various problems of the above-mentioned prior art has become a difficult problem to be overcome in the industry.

鑑於上述習知技術之種種缺失,本發明係提供一種封裝基板,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;以及第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層,且該第一電路結構之重量等於該第二電路 結構之重量。 The present invention provides a package substrate, comprising: a first circuit structure comprising at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; And the second circuit structure includes at least one second dielectric layer and a second circuit layer formed on the second dielectric layer, and the weight of the first circuit structure is equal to the second circuit The weight of the structure.

前述之封裝基板中,該第一電路結構與該第二電路結構相鄰接。 In the foregoing package substrate, the first circuit structure is adjacent to the second circuit structure.

本發明復提供一種封裝基板,係包括:核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;以及第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層,且該第二電路結構之重量等於該核心層與該第一電路結構之重量總和。 The present invention further provides a package substrate, comprising: a core layer having opposite first and second surfaces; a first circuit structure disposed on the first surface of the core layer and including at least one first dielectric a layer and a first circuit layer formed on the first dielectric layer; and a second circuit structure disposed on the second surface of the core layer and including at least one second dielectric layer and formed on the second dielectric layer a second circuit layer on the electrical layer, and the weight of the second circuit structure is equal to the sum of the weights of the core layer and the first circuit structure.

前述之兩種封裝基板中,該第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 In the above two package substrates, the first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer.

前述之兩種封裝基板中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 In the two kinds of package substrates, the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second circuit layer.

本發明亦提供一種封裝件,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及封裝結構,係設於該第二電路結構上,且該第一電路結構之重量等於該封裝結構與該第二電路結構之重量總和。 The present invention also provides a package comprising: a first circuit structure comprising at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; and a second circuit structure comprising at least one a second dielectric layer and a second circuit layer formed on the second dielectric layer; and a package structure is disposed on the second circuit structure, and the weight of the first circuit structure is equal to the package structure and the first The sum of the weights of the two circuit structures.

前述之封裝件中,該第一電路結構與該第二電路結構相鄰接。 In the aforementioned package, the first circuit structure is adjacent to the second circuit structure.

本發明復提供一種封裝件,係包括:核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核 心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及封裝結構,係設於該第二電路結構上,其中,該第一電路結構之重量等於該核心層、該封裝結構與該第二電路結構之重量總和、或者該第一電路結構與該核心層之重量總和等於該封裝結構與該第二電路結構之重量總和。 The present invention further provides a package comprising: a core layer having opposite first and second surfaces; and a first circuit structure disposed on the core The first surface of the core layer includes at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; the second circuit structure is disposed on the second surface of the core layer and includes At least a second dielectric layer and a second circuit layer formed on the second dielectric layer; and a package structure is disposed on the second circuit structure, wherein the first circuit structure has a weight equal to the core layer And the sum of the weight of the package structure and the second circuit structure, or the sum of the weights of the first circuit structure and the core layer is equal to the sum of the weights of the package structure and the second circuit structure.

前述之兩種封裝件中,該第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 In the foregoing two packages, the first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer.

前述之兩種封裝件中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 In the foregoing two packages, the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second circuit layer.

前述之兩種封裝件中,該封裝結構係包含至少一電子元件,係設於該第二電路結構上並電性連接該第二線路層。 In the above two packages, the package structure includes at least one electronic component, which is disposed on the second circuit structure and electrically connected to the second circuit layer.

前述之兩種封裝件中,該封裝結構復包含包覆該電子元件之封裝層。 In the foregoing two packages, the package structure further comprises an encapsulation layer covering the electronic component.

本發明又提供一種封裝件,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;第一封裝結構,係設於該第一電路結構上;第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及第二封裝結構,係設於該第二電路結構上,且該第一電路結構與該第一封裝結構之重量總和等於該第二封裝結構與該第二電路結構之重量總和、或者該第一封裝結構之重量等於該第一電路結構、該第二封 裝結構與該第二電路結構之重量總和。 The present invention further provides a package comprising: a first circuit structure comprising at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; the first package structure is disposed on the a second circuit structure comprising: at least one second dielectric layer and a second circuit layer formed on the second dielectric layer; and a second package structure disposed on the second circuit structure And the sum of the weights of the first circuit structure and the first package structure is equal to the sum of the weights of the second package structure and the second circuit structure, or the weight of the first package structure is equal to the first circuit structure, the first Two The sum of the weight of the mounting structure and the second circuit structure.

前述之封裝件中,該第一電路結構與該第二電路結構相鄰接。 In the aforementioned package, the first circuit structure is adjacent to the second circuit structure.

本發明另提供一種封裝件,係包括:核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;第一封裝結構,係設於該第一電路結構上;第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及第二封裝結構,係設於該第二電路結構上,其中,該第一電路結構與該第一封裝結構之重量總和等於該核心層、該第二封裝結構與該第二電路結構之重量總和。 The present invention further provides a package comprising: a core layer having opposite first and second surfaces; a first circuit structure disposed on the first surface of the core layer and including at least one first dielectric And a first circuit layer formed on the first dielectric layer; a first package structure is disposed on the first circuit structure; and a second circuit structure is disposed on the second surface of the core layer and includes At least a second dielectric layer and a second circuit layer formed on the second dielectric layer; and a second package structure disposed on the second circuit structure, wherein the first circuit structure and the first The sum of the weights of the package structures is equal to the sum of the weights of the core layer, the second package structure and the second circuit structure.

前述之兩種封裝件中,該第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 In the foregoing two packages, the first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer.

前述之兩種封裝件中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 In the foregoing two packages, the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second circuit layer.

前述之兩種封裝件中,該第一封裝結構係包含至少一電子元件,係設於該第一電路結構上並電性連接該第一線路層。例如,該第一封裝結構復包含包覆該電子元件之封裝層。 In the above two packages, the first package structure includes at least one electronic component disposed on the first circuit structure and electrically connected to the first circuit layer. For example, the first package structure further comprises an encapsulation layer covering the electronic component.

前述之兩種封裝件中,該第二封裝結構係包含至少一電子元件,係設於該第二電路結構上並電性連接該第一線路層。例如,該第二封裝結構復包含包覆該電子元件之封裝層。 In the above two packages, the second package structure includes at least one electronic component, which is disposed on the second circuit structure and electrically connected to the first circuit layer. For example, the second package structure further comprises an encapsulation layer covering the electronic component.

由上可知,本發明之封裝基板及封裝件中,係藉由將整體結構分成兩部分,且其中一部分之重量等於另一部分之重量,使中性軸位於該封裝基板(或封裝件)之形心處或重心處,以減少該封裝基板(或封裝件)翹曲之形變量。 It can be seen from the above that in the package substrate and the package of the present invention, the overall structure is divided into two parts, and the weight of one part is equal to the weight of the other part, so that the neutral axis is in the shape of the package substrate (or package). At the center of the heart or at the center of gravity, to reduce the deformation of the package substrate (or package).

1,1’,2,2’,2”,3,3’,4,4’‧‧‧封裝基板 1,1',2,2',2",3,3',4,4'‧‧‧ package substrate

10‧‧‧介電結構 10‧‧‧Dielectric structure

100,20,30,40‧‧‧核心層 100, 20, 30, 40‧‧‧ core layer

101,210,210’,310,410‧‧‧第一介電層 101,210,210',310,410‧‧‧First dielectric layer

102,220,220’,320,420‧‧‧第二介電層 102,220,220',320,420‧‧‧second dielectric layer

11,211,211’,311,411‧‧‧第一線路層 11,211,211',311,411‧‧‧First circuit layer

12,221,221’,321,421‧‧‧第二線路層 12,221,221',321,421‧‧‧second circuit layer

120‧‧‧導電通孔 120‧‧‧ conductive through holes

13‧‧‧主動元件 13‧‧‧Active components

14‧‧‧封裝膠體 14‧‧‧Package colloid

20a‧‧‧第一表面 20a‧‧‧ first surface

20b‧‧‧第二表面 20b‧‧‧second surface

200,300,400‧‧‧導電盲孔 200,300,400‧‧‧conductive blind holes

21,21’,31,41‧‧‧第一電路結構 21, 21’, 31, 41‧‧‧ first circuit structure

212,312,412‧‧‧第一絕緣保護層 212,312,412‧‧‧first insulation protection layer

22,22’,32,42‧‧‧第二電路結構 22,22’,32,42‧‧‧second circuit structure

222,322,422‧‧‧第二絕緣保護層 222,322,422‧‧‧Second insulation protection layer

3a,3a’,3a”,3b,4a,4a’‧‧‧封裝件 3a, 3a’, 3a”, 3b, 4a, 4a’‧‧‧Package

33,33’,33”‧‧‧封裝結構 33,33’,33”‧‧‧Package structure

330,430,440‧‧‧電子元件 330,430,440‧‧‧Electronic components

331,431,441‧‧‧封裝層 331,431,441‧‧‧Encapsulation layer

34‧‧‧導電凸塊 34‧‧‧Electrical bumps

34’‧‧‧銲線 34’‧‧‧welding line

35‧‧‧導電元件 35‧‧‧Conducting components

43‧‧‧第一封裝結構 43‧‧‧First package structure

44‧‧‧第二封裝結構 44‧‧‧Second package structure

t,d,h,h’,r,r’‧‧‧厚度 t,d,h,h’,r,r’‧‧‧ thickness

第1A圖係為習知半導體封裝件之剖視示意圖;第1B圖係為習知封裝基板之剖視示意圖;第2及2’圖係為本發明之封裝基板之第一實施例之不同態樣之剖視示意圖;第2A至2C圖係為本發明之封裝基板之第二實施例之製法之剖視示意圖;第3A圖係為本發明之封裝件之第一實施例之剖視示意圖;其中,第3A’及3A”圖係為第3A圖之其它實施例;第3B圖係為本發明之封裝件之第二實施例之剖視示意圖;以及第4圖係為本發明之封裝件之第三實施例之剖視示意圖;其中,第4’圖係為第4圖之另一實施例。 1A is a schematic cross-sectional view of a conventional semiconductor package; FIG. 1B is a schematic cross-sectional view of a conventional package substrate; and 2 and 2' are different states of the first embodiment of the package substrate of the present invention; 2A to 2C are schematic cross-sectional views showing a method of fabricating a second embodiment of the package substrate of the present invention; and FIG. 3A is a cross-sectional view showing a first embodiment of the package of the present invention; 3A' and 3A' are diagrams of other embodiments of FIG. 3A; FIG. 3B is a schematic cross-sectional view of a second embodiment of the package of the present invention; and FIG. 4 is a package of the present invention A cross-sectional view of a third embodiment; wherein the 4'th image is another embodiment of FIG.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定 條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“一”、“第一”及“第二”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. Limited The conditions are not technically meaningful, and any modification of the structure, change of the proportional relationship or adjustment of the size should remain in the present invention without affecting the effects and the achievable objectives of the present invention. The technical content revealed can be covered. In the meantime, the terms "upper", "one", "first" and "second" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments in the relative relationship are considered to be within the scope of the present invention.

第2及2’圖係為本發明之封裝基板2,2’之第一實施例之剖面示意圖。 The second and second views are schematic cross-sectional views of the first embodiment of the package substrate 2, 2' of the present invention.

如第2圖所示,該封裝基板2係為無核心層(coreless)態樣,其包括:第一電路結構21以及第二電路結構22,且該第一電路結構21之重量等於該第二電路結構22之重量。 As shown in FIG. 2, the package substrate 2 is a coreless state, and includes: a first circuit structure 21 and a second circuit structure 22, and the weight of the first circuit structure 21 is equal to the second The weight of the circuit structure 22.

所述之第一電路結構21係包含至少一第一介電層210及形成於該第一介電層210上之第一線路層211。 The first circuit structure 21 includes at least a first dielectric layer 210 and a first circuit layer 211 formed on the first dielectric layer 210.

所述之第二電路結構22係包含至少一第二介電層220及形成於該第二介電層220上之第二線路層221,且可選擇性形成至少一導電盲孔200於該第一與第二介電層210,220中,以電性連接該第一與第二線路層211,221。 The second circuit structure 22 includes at least one second dielectric layer 220 and a second circuit layer 221 formed on the second dielectric layer 220, and selectively forms at least one conductive via hole 200. The first and second circuit layers 211, 221 are electrically connected to the first and second dielectric layers 210, 220.

於本實施例中,該第一電路結構21係具有單一第一介電層210,且該第二電路結構22係具有單一第二介電層220,即該封裝基板2具有兩層介電層,並壓合該第一介電層210與該第二介電層220,使該第一電路結構21與該第 二電路結構22相鄰接。 In this embodiment, the first circuit structure 21 has a single first dielectric layer 210, and the second circuit structure 22 has a single second dielectric layer 220, that is, the package substrate 2 has two dielectric layers. And pressing the first dielectric layer 210 and the second dielectric layer 220 to make the first circuit structure 21 and the first The two circuit structures 22 are adjacent.

再者,該第一電路結構21之厚度t與該第二電路結構22之厚度d係相等或不相等。 Moreover, the thickness t of the first circuit structure 21 is equal to or different from the thickness d of the second circuit structure 22.

因此,本實施例之封裝基板2係藉由該第一電路結構21之重量等於該第二電路結構22之重量(例如,利用調整該第一電路結構21之厚度t與該第二電路結構22之厚度d),以令中性軸(neutral axis)位於該封裝基板2之中間位置,藉此降低該封裝基板2發生如第1B圖所示之翹曲之機率。其中,所述之中間位置係為該封裝基板2之形心處或重心處。 Therefore, the package substrate 2 of the present embodiment has a weight equal to the weight of the second circuit structure 22 by the first circuit structure 21 (for example, by adjusting the thickness t of the first circuit structure 21 and the second circuit structure 22) The thickness d) is such that a neutral axis is located in the middle of the package substrate 2, thereby reducing the probability that the package substrate 2 will warp as shown in FIG. 1B. Wherein, the intermediate position is at the centroid or center of gravity of the package substrate 2.

又,如第2’圖所示,該封裝基板2’可為芯板式(core)態樣,其復包括一具有相對之第一表面20a與第二表面20b的核心層20,使該第一電路結構21設於該核心層20之第一表面20a上,且該第二電路結構22設於該核心層20之第二表面20b上,其中,該第二電路結構22之重量等於該核心層20與該第一電路結構21之重量總和。 Moreover, as shown in FIG. 2', the package substrate 2' may be a core pattern including a core layer 20 having a first surface 20a and a second surface 20b opposite to each other. The circuit structure 21 is disposed on the first surface 20a of the core layer 20, and the second circuit structure 22 is disposed on the second surface 20b of the core layer 20, wherein the weight of the second circuit structure 22 is equal to the core layer 20 is summed with the weight of the first circuit structure 21.

因此,藉由該第二電路結構22之重量等於該核心層20與該第一電路結構21之重量總和,以令中性軸位於該封裝基板2’之中間位置,藉此降低該封裝基板2’發生翹曲之機率。其中,所述之中間位置係為該封裝基板2’之形心處或重心處。 Therefore, the weight of the second circuit structure 22 is equal to the sum of the weights of the core layer 20 and the first circuit structure 21, so that the neutral axis is located at the middle of the package substrate 2', thereby lowering the package substrate 2 'The probability of warping. Wherein, the intermediate position is at the centroid or center of gravity of the package substrate 2'.

請參閱第2A至2C圖,係為本發明之封裝基板2”之第二實施例之製法,第二實施例與第一實施例大致相同,主要差異在於電路結構之層數,故以下詳述相異處,而不贅 述相同處。 2A to 2C are the manufacturing method of the second embodiment of the package substrate 2" of the present invention. The second embodiment is substantially the same as the first embodiment. The main difference lies in the number of layers of the circuit structure, so the following details Different, not jealous Said the same place.

如第2A圖所示,提供一介電結構,如相疊之第一介電層210與第二介電層220。 As shown in FIG. 2A, a dielectric structure such as a first dielectric layer 210 and a second dielectric layer 220 are stacked.

如第2B圖所示,形成第一線路層211於該第一介電層210上,且形成第二線路層221於該第二介電層220上。 As shown in FIG. 2B, a first wiring layer 211 is formed on the first dielectric layer 210, and a second wiring layer 221 is formed on the second dielectric layer 220.

如第2C圖所示,重複形成第一介電層210’與第一線路層211’於該第一介電層210與第一線路層211上,使該第一電路結構21’具有複數介電層與線路層,且重複形成第二介電層220’與第二線路層221’於該第二介電層220與第二線路層221上,使該第二電路結構22’具有複數介電層與線路層。 As shown in FIG. 2C, the first dielectric layer 210' and the first circuit layer 211' are repeatedly formed on the first dielectric layer 210 and the first circuit layer 211, so that the first circuit structure 21' has a complex interface. And the second dielectric layer 220 ′ and the second circuit layer 221 ′ are formed on the second dielectric layer 220 and the second circuit layer 221 , so that the second circuit structure 22 ′ has a plurality of dielectric layers Electrical layer and circuit layer.

於本實施例中,該第一電路結構21’復包含形成於該第一介電層210’與第一線路層211’上之如防銲層之第一絕緣保護層212,且該第二電路結構22’復包含形成於該第二介電層220’與第二線路層221’上之如防銲層之第二絕緣保護層222。 In this embodiment, the first circuit structure 21 ′ further includes a first insulating protective layer 212 such as a solder resist layer formed on the first dielectric layer 210 ′ and the first wiring layer 211 ′, and the second The circuit structure 22' further includes a second insulating protective layer 222 such as a solder resist layer formed on the second dielectric layer 220' and the second wiring layer 221'.

再者,該第一介電層210,210’之厚度r,r’與該第二介電層220,220’之厚度h,h’係相等或不相等,如下表。 Furthermore, the thicknesses r, r' of the first dielectric layers 210, 210' are equal or unequal to the thicknesses h, h' of the second dielectric layers 220, 220', as shown in the following table.

因此,藉由該第一電路結構21’之重量等於該第二電路結構22’之重量,以令中性軸位於該封裝基板2”之中間 位置,藉此降低該封裝基板2”發生翹曲之機率。其中,所述之中間位置係為該封裝基板2”之形心處或重心處。 Therefore, the weight of the first circuit structure 21' is equal to the weight of the second circuit structure 22' such that the neutral axis is located in the middle of the package substrate 2" Position, thereby reducing the probability of warpage of the package substrate 2", wherein the intermediate position is at the centroid or center of gravity of the package substrate 2".

請參閱第3A、3A’及3A”圖,係為本發明之封裝件之第一實施例之剖面示意圖。 Please refer to Figures 3A, 3A' and 3A" for a cross-sectional view of a first embodiment of the package of the present invention.

如第3A及3A’圖所示,本發明之封裝件3a係包括:一封裝基板3、以及設於該封裝基板3上之封裝結構33,33’,且該封裝基板3具有第一電路結構31與第二電路結構32。 As shown in FIGS. 3A and 3A', the package 3a of the present invention comprises: a package substrate 3, and a package structure 33, 33' disposed on the package substrate 3, and the package substrate 3 has a first circuit structure. 31 and the second circuit structure 32.

於本實施例中,該封裝基板3係為無核心層(coreless)態樣,故該第一電路結構31係與該第二電路結構32相鄰接。 In this embodiment, the package substrate 3 is in a coreless manner, so the first circuit structure 31 is adjacent to the second circuit structure 32.

所述之第一電路結構31係包含至少一第一介電層310、形成於該第一介電層310上之第一線路層311、及形成於該第一介電層310與該第一線路層311上之第一絕緣保護層312。 The first circuit structure 31 includes at least a first dielectric layer 310, a first circuit layer 311 formed on the first dielectric layer 310, and a first dielectric layer 310 and the first A first insulating protective layer 312 on the wiring layer 311.

於本實施例中,該第一絕緣保護層312係外露該第一線路層311,以供外露之該第一線路層311結合如銲球之導電元件35,故該第一電路結構31之外側係作為植球側。 In the embodiment, the first insulating protection layer 312 exposes the first circuit layer 311, so that the exposed first circuit layer 311 is bonded to the conductive component 35 such as a solder ball, so the outer side of the first circuit structure 31 It is used as a ball-planting side.

所述之第二電路結構32係包含至少一第二介電層320、形成於該第二介電層320上之第二線路層321、及形成於該第二介電層320與該第二線路層321上之第二絕緣保護層322,且可選擇性形成複數導電盲孔300於該第一與第二介電層310,320中,以電性連接該第一與第二線路層311,321。 The second circuit structure 32 includes at least one second dielectric layer 320, a second circuit layer 321 formed on the second dielectric layer 320, and a second dielectric layer 320 and the second layer. A second insulating protective layer 322 is disposed on the circuit layer 321 , and a plurality of conductive vias 300 are selectively formed in the first and second dielectric layers 310 , 320 to electrically connect the first and second circuit layers 311 , 321 .

於本實施例中,該第二絕緣保護層322係外露該第二線路層321,以供外露之該第二線路層321電性結合該封裝結構33,33’,故該第二電路結構32係作為置晶側。然而,所述之置晶側與植球側係依製程而定,並不限於上述。 In the embodiment, the second insulating layer 322 exposes the second circuit layer 321 so that the exposed second circuit layer 321 is electrically coupled to the package structure 33, 33', so the second circuit structure 32 Used as a crystallizing side. However, the crystallizing side and the ball-planting side are determined according to the process, and are not limited to the above.

再者,該第一電路結構31係具有複數第一介電層310,且該第二電路結構32係具有單一第二介電層320,使該第一電路結構31之厚度與該第二電路結構32之厚度不相等;當然,該第一電路結構31之厚度與該第二電路結構32之厚度可相等。 Furthermore, the first circuit structure 31 has a plurality of first dielectric layers 310, and the second circuit structure 32 has a single second dielectric layer 320, such that the thickness of the first circuit structure 31 and the second circuit The thickness of the structure 32 is not equal; of course, the thickness of the first circuit structure 31 and the thickness of the second circuit structure 32 may be equal.

所述之封裝結構33係設於該第二電路結構32上,且該第一電路結構31之重量等於該封裝結構33,33’與該第二電路結構32之重量總和。 The package structure 33 is disposed on the second circuit structure 32, and the weight of the first circuit structure 31 is equal to the sum of the weights of the package structures 33, 33' and the second circuit structure 32.

於本實施例中,如第3A圖所示,該封裝結構33係包含至少一電子元件330,其設於該第二電路結構32上並電性連接該第二線路層320。具體地,所述之電子元件330係係為主動元件、被動元件或其組合,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。 In this embodiment, as shown in FIG. 3A, the package structure 33 includes at least one electronic component 330 disposed on the second circuit structure 32 and electrically connected to the second circuit layer 320. Specifically, the electronic component 330 is an active component, a passive component or a combination thereof, wherein the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor.

於另一實施例中,如第3A’圖所示,該封裝結構33’係包含至少一電子元件330及包覆該電子元件330之封裝層331。具體地,該封裝層331係形成於該第二電路結構32上,以包覆該電子元件330。 In another embodiment, as shown in FIG. 3A, the package structure 33' includes at least one electronic component 330 and an encapsulation layer 331 covering the electronic component 330. Specifically, the encapsulation layer 331 is formed on the second circuit structure 32 to encapsulate the electronic component 330.

另外,該電子元件330係以覆晶方式設於該第二電路結構32上,即藉由複數導電凸塊34電性連接該第二線路 層321。然而,於其它實施例中,該電子元件330亦可利用打線封裝方式,如第3A”圖所示之封裝件3a”,即該電子元件330係採用銲線34’電性連接該第二線路層321;或者,該電子元件330亦可嵌埋於該第二介電層320中(未圖示)。 In addition, the electronic component 330 is provided on the second circuit structure 32 in a flip chip manner, that is, the second conductive line 34 is electrically connected to the second circuit. Layer 321. However, in other embodiments, the electronic component 330 can also be packaged by a wire bonding method, such as the package 3a" shown in FIG. 3A", that is, the electronic component 330 is electrically connected to the second line by using a bonding wire 34'. The layer 321; or the electronic component 330 may be embedded in the second dielectric layer 320 (not shown).

因此,藉由該第一電路結構31之重量等於該封裝結構33,33’與該第二電路結構32之重量,以令中性軸位於該封裝件3a,3a’,3a”之中間位置,藉此降低該封裝件3a,3a’,3a”發生翹曲之機率。其中,所述之中間位置係為該封裝件3a,3a’,3a”之形心處或重心處。 Therefore, the weight of the first circuit structure 31 is equal to the weight of the package structures 33, 33' and the second circuit structure 32 such that the neutral axis is located between the packages 3a, 3a', 3a". Thereby, the probability of warping of the package 3a, 3a', 3a" is reduced. Wherein, the intermediate position is at the centroid or center of gravity of the package 3a, 3a', 3a".

請參閱第3B圖,係為本發明之封裝件之第二實施例之剖面示意圖,本實施例與該封裝件之第一實施例大致相同,主要差異在於封裝基板之態樣,故以下詳述相異處,而不再贅述相同處。 Please refer to FIG. 3B , which is a schematic cross-sectional view of a second embodiment of the package of the present invention. This embodiment is substantially the same as the first embodiment of the package. The main difference lies in the aspect of the package substrate, so the following detailed description Different places, and no longer repeat the same place.

如第3B圖所示,該封裝件3b之封裝基板3’復包括一核心層30,且該第一與第二電路結構31,32係分別設於該核心層30之第一與第二表面30a,30b上,並可選擇性形成至少一導電盲孔300於該核心層30中,以電性連接該第一與第二線路層311,321。 As shown in FIG. 3B, the package substrate 3' of the package 3b further includes a core layer 30, and the first and second circuit structures 31, 32 are respectively disposed on the first and second surfaces of the core layer 30. At least one conductive via 300 is selectively formed in the core layer 30 to electrically connect the first and second circuit layers 311, 321 .

於本實施例中,該第一電路結構31係具有單一第一介電層310,且該第二電路結構32係具有複數第二介電層320,使該第一電路結構31之厚度與該第二電路結構32之厚度不相等;當然,該第一電路結構31之厚度與該第二電路結構32之厚度可相等。 In this embodiment, the first circuit structure 31 has a single first dielectric layer 310, and the second circuit structure 32 has a plurality of second dielectric layers 320, such that the thickness of the first circuit structure 31 is The thickness of the second circuit structure 32 is not equal; of course, the thickness of the first circuit structure 31 and the thickness of the second circuit structure 32 may be equal.

再者,該第一電路結構31之重量等於該核心層30、該封裝結構33”與該第二電路結構32之重量總和。或者,該第一電路結構31與該核心層30之重量總和等於該封裝結構33”與該第二電路結構32之重量總和。 Moreover, the weight of the first circuit structure 31 is equal to the sum of the weight of the core layer 30, the package structure 33" and the second circuit structure 32. Alternatively, the sum of the weights of the first circuit structure 31 and the core layer 30 is equal to The package structure 33" is summed with the weight of the second circuit structure 32.

因此,藉由該第一電路結構31之重量等於該核心層30、該封裝結構33”與該第二電路結構32之重量總和(或藉由該第一電路結構31與該核心層30之重量總和等於該封裝結構33”與該第二電路結構32之重量總和),以令中性軸位於該封裝件3b之中間位置,藉此降低該封裝件3b發生翹曲之機率。其中,所述之中間位置係為該封裝件3b之形心處或重心處。 Therefore, the weight of the first circuit structure 31 is equal to the sum of the weight of the core layer 30, the package structure 33" and the second circuit structure 32 (or by the weight of the first circuit structure 31 and the core layer 30) The sum is equal to the sum of the weights of the package structure 33" and the second circuit structure 32 such that the neutral axis is located in the middle of the package 3b, thereby reducing the probability of warping of the package 3b. Wherein, the intermediate position is at the centroid or center of gravity of the package 3b.

請參閱第4圖,係為本發明之封裝件之第三實施例之剖面示意圖。本實施例與封裝件之上述實施例大致相同,主要差異在於第一電路結構上設有封裝結構,故以下詳述相異處,而不再贅述相同處。 Please refer to FIG. 4, which is a cross-sectional view showing a third embodiment of the package of the present invention. This embodiment is substantially the same as the above embodiment of the package. The main difference is that the first circuit structure is provided with a package structure. Therefore, the differences will be described in detail below, and the same portions will not be described again.

如第4圖所示,本發明之封裝件4a係包括:一封裝基板4、以及分別設於該封裝基板4上、下側上之第一封裝結構43與第二封裝結構44,且該封裝基板4具有第一電路結構41與第二電路結構42。 As shown in FIG. 4, the package 4a of the present invention comprises: a package substrate 4, and a first package structure 43 and a second package structure 44 respectively disposed on the lower side of the package substrate 4, and the package The substrate 4 has a first circuit structure 41 and a second circuit structure 42.

於本實施例中,該封裝基板4係為無核心層(coreless)態樣,故該第一電路結構41係與該第二電路結構42相鄰接。 In this embodiment, the package substrate 4 is in a coreless state, so the first circuit structure 41 is adjacent to the second circuit structure 42.

所述之第一電路結構41係包含至少一第一介電層410、形成於該第一介電層410上之第一線路層411、及形 成於該第一介電層410與該第一線路層411上之第一絕緣保護層412。 The first circuit structure 41 includes at least a first dielectric layer 410, a first circuit layer 411 formed on the first dielectric layer 410, and a shape A first insulating protective layer 412 is formed on the first dielectric layer 410 and the first wiring layer 411.

於本實施例中,該第一絕緣保護層412係外露該第一線路層411,以供外露之該第一線路層411電性結合該第一封裝結構43。 In the embodiment, the first insulating layer 412 exposes the first circuit layer 411 for electrically connecting the exposed first wiring layer 411 to the first package structure 43.

所述之第二電路結構42係包含至少一第二介電層420、形成於該第二介電層420上之第二線路層421、及形成於該第二介電層420與該第二線路層421上之第二絕緣保護層422。 The second circuit structure 42 includes at least a second dielectric layer 420, a second circuit layer 421 formed on the second dielectric layer 420, and a second dielectric layer 420 and the second layer. A second insulating protective layer 422 on the wiring layer 421.

於本實施例中,該第二絕緣保護層422係外露該第二線路層421,以供外露之該第二線路層421電性結合該第二封裝結構44。 In the embodiment, the second insulating layer 422 exposes the second circuit layer 421 to electrically expose the exposed second wiring layer 421 to the second package structure 44.

所述之第一封裝結構43係設於該第一電路結構41上。於本實施例中,該第一封裝結構43係包含至少一電子元件430及包覆該電子元件430之封裝層431,且該電子元件430係設於該第一電路結構41上並電性連接該第一線路層410。有關電子元件430之型式可參考上述。 The first package structure 43 is disposed on the first circuit structure 41. In this embodiment, the first package structure 43 includes at least one electronic component 430 and an encapsulation layer 431 covering the electronic component 430. The electronic component 430 is electrically connected to the first circuit structure 41. The first circuit layer 410. For the type of electronic component 430, reference may be made to the above.

所述之第二封裝結構44係設於該第二電路結構42上。於本實施例中,該第二封裝結構44係包含至少一電子元件440及包覆該電子元件440之封裝層441,且該電子元件440係設於該第二電路結構42上並電性連接該第二線路層420。有關電子元件440之型式可參考上述。 The second package structure 44 is disposed on the second circuit structure 42. In this embodiment, the second package structure 44 includes at least one electronic component 440 and an encapsulation layer 441 covering the electronic component 440. The electronic component 440 is disposed on the second circuit structure 42 and electrically connected. The second circuit layer 420. The types of electronic components 440 can be referred to above.

再者,該第一電路結構41與該第一封裝結構43之重量總和等於該第二封裝結構44與該第二電路結構42之重 量總和。或者,該第一封裝結構43之重量等於該第一電路結構41、該第二封裝結構44與該第二電路結構42之重量總和。 Moreover, the sum of the weights of the first circuit structure 41 and the first package structure 43 is equal to the weight of the second package structure 44 and the second circuit structure 42. The sum of the quantities. Alternatively, the weight of the first package structure 43 is equal to the sum of the weights of the first circuit structure 41, the second package structure 44, and the second circuit structure 42.

因此,藉由該第一電路結構41與該第一封裝結構43之重量總和等於該第二封裝結構44與該第二電路結構42之重量總和(或藉由該第一封裝結構43之重量等於該第一電路結構41、該第二封裝結構44與該第二電路結構42之重量總和),以令中性軸位於該封裝件4a之中間位置,藉此降低該封裝件4a發生翹曲之機率。其中,所述之中間位置係為該封裝件4a之形心處或重心處。 Therefore, the sum of the weights of the first circuit structure 41 and the first package structure 43 is equal to the sum of the weights of the second package structure 44 and the second circuit structure 42 (or the weight of the first package structure 43 is equal to The first circuit structure 41, the sum of the weights of the second package structure 44 and the second circuit structure 42 are such that the neutral axis is located at the middle of the package 4a, thereby reducing the warpage of the package 4a. Probability. Wherein, the intermediate position is at the centroid or center of gravity of the package 4a.

另外,如第4’圖所示,該封裝基板4’亦可為具芯板(core)之態樣,故該封裝基板4’復包含一核心層40,係夾設於該第一電路結構41與該第二電路結構42之間,並可選擇性形成至少一導電盲孔400於該核心層40中,以電性連接該第一與第二線路層411,421,且該第一電路結構41與該第一封裝結構43之重量總和等於該核心層40、該第二封裝結構44與該第二電路結構42之重量總和。 In addition, as shown in FIG. 4', the package substrate 4' may also have a core. Therefore, the package substrate 4' further includes a core layer 40 sandwiched between the first circuit structure. The first circuit structure 41 is electrically connected to the first and second circuit layers 411, 421, and the first circuit structure 41 is electrically connected to the second circuit structure 42 and the at least one conductive via 400 is selectively formed in the core layer 40. The sum of the weights of the first package structure 43 is equal to the sum of the weights of the core layer 40, the second package structure 44 and the second circuit structure 42.

因此,藉由該第一電路結構41與該第一封裝結構43之重量總和等於該核心層40、該第二封裝結構44與該第二電路結構42之重量總和,以令中性軸位於該封裝件4a’之中間位置,藉此降低該封裝件4a’發生翹曲之機率。其中,所述之中間位置係為該封裝件4a’之形心處或重心處。 Therefore, the sum of the weights of the first circuit structure 41 and the first package structure 43 is equal to the sum of the weights of the core layer 40, the second package structure 44 and the second circuit structure 42 so that the neutral axis is located at the The middle position of the package 4a', thereby reducing the probability of warpage of the package 4a'. Wherein, the intermediate position is at the centroid or center of gravity of the package 4a'.

綜上所述,本發明之封裝件及其封裝基板,係藉由將整體結構分成兩部分,且其中一部分之重量等於另一部分 之重量,使中性軸位於該封裝基板(或封裝件)之形心處或重心處,以減少該封裝基板(或封裝件)翹曲之形變量。 In summary, the package of the present invention and its package substrate are divided into two parts by the whole structure, and the weight of one part is equal to the other part. The weight is such that the neutral axis is located at the centroid or center of gravity of the package substrate (or package) to reduce the deformation of the package substrate (or package).

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

2‧‧‧封裝基板 2‧‧‧Package substrate

200‧‧‧導電盲孔 200‧‧‧conductive blind hole

21‧‧‧第一電路結構 21‧‧‧First circuit structure

210‧‧‧第一介電層 210‧‧‧First dielectric layer

211‧‧‧第一線路層 211‧‧‧First line layer

22‧‧‧第二電路結構 22‧‧‧Second circuit structure

220‧‧‧第二介電層 220‧‧‧Second dielectric layer

221‧‧‧第二線路層 221‧‧‧second circuit layer

t,d‧‧‧厚度 t,d‧‧‧thickness

Claims (21)

一種封裝基板,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;以及第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層,且該第一電路結構之重量等於該第二電路結構之重量。 A package substrate includes: a first circuit structure including at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; and a second circuit structure including at least one second And an electrical layer and a second circuit layer formed on the second dielectric layer, and the weight of the first circuit structure is equal to the weight of the second circuit structure. 如申請專利範圍第1項所述之封裝基板,其中,該第一電路結構與該第二電路結構相鄰接。 The package substrate of claim 1, wherein the first circuit structure is adjacent to the second circuit structure. 一種封裝基板,係包括:核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;以及第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層,且該第二電路結構之重量等於該核心層與該第一電路結構之重量總和。 A package substrate comprising: a core layer having opposite first and second surfaces; a first circuit structure disposed on the first surface of the core layer and comprising at least one first dielectric layer and formed on a first circuit layer on the first dielectric layer; and a second circuit structure disposed on the second surface of the core layer and including at least one second dielectric layer and formed on the second dielectric layer a second circuit layer, and the weight of the second circuit structure is equal to the sum of the weights of the core layer and the first circuit structure. 如申請專利範圍第1或3項所述之封裝基板,其中,該第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 The package substrate of claim 1 or 3, wherein the first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer. 如申請專利範圍第1或3項所述之封裝基板,其中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 The package substrate of claim 1 or 3, wherein the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second circuit layer. 一種封裝件,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及封裝結構,係設於該第二電路結構上,且該第一電路結構之重量等於該封裝結構與該第二電路結構之重量總和。 A package comprising: a first circuit structure comprising at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; and a second circuit structure comprising at least a second dielectric And a second circuit layer formed on the second dielectric layer; and a package structure is disposed on the second circuit structure, and the weight of the first circuit structure is equal to the package structure and the second circuit structure The sum of the weights. 如申請專利範圍第6項所述之封裝件,其中,該第一電路結構與該第二電路結構相鄰接。 The package of claim 6, wherein the first circuit structure is adjacent to the second circuit structure. 一種封裝件,係包括:核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及封裝結構,係設於該第二電路結構上,其中,該第一電路結構之重量等於該核心層、該封裝結構與該第二電路結構之重量總和、或者該第一電路結構與該核心層之重量總和等於該封裝結構與該第二電路結構之重量總和。 A package comprising: a core layer having opposite first and second surfaces; a first circuit structure disposed on the first surface of the core layer and comprising at least one first dielectric layer and formed on a first circuit layer on the first dielectric layer; a second circuit structure disposed on the second surface of the core layer and including at least a second dielectric layer and a second dielectric layer a second circuit layer; and a package structure is disposed on the second circuit structure, wherein the weight of the first circuit structure is equal to the core layer, the sum of the weights of the package structure and the second circuit structure, or the first circuit The sum of the weight of the structure and the core layer is equal to the sum of the weights of the package structure and the second circuit structure. 如申請專利範圍第6或8項所述之封裝件,其中,該 第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 The package of claim 6 or 8, wherein the The first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer. 如申請專利範圍第6或8項所述之封裝件,其中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 The package of claim 6 or 8, wherein the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second circuit layer. 如申請專利範圍第6或8項所述之封裝件,其中,該封裝結構係包含至少一電子元件,係設於該第二電路結構上並電性連接該第二線路層。 The package of claim 6 or 8, wherein the package structure comprises at least one electronic component disposed on the second circuit structure and electrically connected to the second circuit layer. 如申請專利範圍第11項所述之封裝件,其中,該封裝結構復包含包覆該電子元件之封裝層。 The package of claim 11, wherein the package structure further comprises an encapsulation layer covering the electronic component. 一種封裝件,係包括:第一電路結構,係包含至少一第一介電層及形成於該第一介電層上之第一線路層;第一封裝結構,係設於該第一電路結構上;第二電路結構,係包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及第二封裝結構,係設於該第二電路結構上,且該第一電路結構與該第一封裝結構之重量總和等於該第二封裝結構與該第二電路結構之重量總和、或者該第一封裝結構之重量等於該第一電路結構、該第二封裝結構與該第二電路結構之重量總和。 A package includes: a first circuit structure including at least a first dielectric layer and a first circuit layer formed on the first dielectric layer; and a first package structure disposed on the first circuit structure The second circuit structure includes at least a second dielectric layer and a second circuit layer formed on the second dielectric layer; and a second package structure is disposed on the second circuit structure, and the The sum of the weights of the first circuit structure and the first package structure is equal to the sum of the weights of the second package structure and the second circuit structure, or the weight of the first package structure is equal to the first circuit structure, the second package structure and The sum of the weights of the second circuit structure. 如申請專利範圍第13項所述之封裝件,其中,該第一電路結構與該第二電路結構相鄰接。 The package of claim 13, wherein the first circuit structure is adjacent to the second circuit structure. 一種封裝件,係包括: 核心層,係具有相對之第一表面與第二表面;第一電路結構,係設於該核心層之第一表面上並包含至少一第一介電層及形成於該第一介電層上之第一線路層;第一封裝結構,係設於該第一電路結構上;第二電路結構,係設於該核心層之第二表面上並包含至少一第二介電層及形成於該第二介電層上之第二線路層;以及第二封裝結構,係設於該第二電路結構上,其中,該第一電路結構與該第一封裝結構之重量總和等於該核心層、該第二封裝結構與該第二電路結構之重量總和。 A package comprising: The core layer has a first surface and a second surface; the first circuit structure is disposed on the first surface of the core layer and includes at least one first dielectric layer and is formed on the first dielectric layer a first circuit layer; the first package structure is disposed on the first circuit structure; the second circuit structure is disposed on the second surface of the core layer and includes at least a second dielectric layer and is formed thereon a second circuit layer on the second dielectric layer; and a second package structure is disposed on the second circuit structure, wherein a sum of weights of the first circuit structure and the first package structure is equal to the core layer, The sum of the weights of the second package structure and the second circuit structure. 如申請專利範圍第13或15項所述之封裝件,其中,該第一電路結構復包含形成於該第一介電層與該第一線路層上之絕緣保護層。 The package of claim 13 or 15, wherein the first circuit structure further comprises an insulating protective layer formed on the first dielectric layer and the first circuit layer. 如申請專利範圍第13或15項所述之封裝件,其中,該第二電路結構復包含形成於該第二介電層與該第二線路層上之絕緣保護層。 The package of claim 13 or 15, wherein the second circuit structure further comprises an insulating protective layer formed on the second dielectric layer and the second wiring layer. 如申請專利範圍第13或15項所述之封裝件,其中,該第一封裝結構係包含至少一電子元件,係設於該第一電路結構上並電性連接該第一線路層。 The package of claim 13 or claim 15, wherein the first package structure comprises at least one electronic component disposed on the first circuit structure and electrically connected to the first circuit layer. 如申請專利範圍第18項所述之封裝件,其中,該第一封裝結構復包含包覆該電子元件之封裝層。 The package of claim 18, wherein the first package structure further comprises an encapsulation layer covering the electronic component. 如申請專利範圍第13或15項所述之封裝件,其中,該 第二封裝結構係包含至少一電子元件,係設於該第二電路結構上並電性連接該第二線路層。 The package of claim 13 or 15, wherein The second package structure includes at least one electronic component disposed on the second circuit structure and electrically connected to the second circuit layer. 如申請專利範圍第20項所述之封裝件,其中,該第二封裝結構復包含包覆該電子元件之封裝層。 The package of claim 20, wherein the second package structure further comprises an encapsulation layer covering the electronic component.
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