TWI733485B - 晶片結構 - Google Patents
晶片結構 Download PDFInfo
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- TWI733485B TWI733485B TW109118888A TW109118888A TWI733485B TW I733485 B TWI733485 B TW I733485B TW 109118888 A TW109118888 A TW 109118888A TW 109118888 A TW109118888 A TW 109118888A TW I733485 B TWI733485 B TW I733485B
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Abstract
一種晶片結構包括晶片主體以及多個導電凸塊。晶片主體包括主動面以及配置於主動面上的多個凸塊接墊。多個導電凸塊配置於晶片主體的主動面並分別連接至多個凸塊接墊,且至少一導電凸塊具有梯形形狀,該梯形形狀具有一對平行邊以及一對非平行邊。
Description
本發明實施例是有關於一種半導體結構,且特別是有關於一種晶片結構。
半導體裝置正朝著高安裝密度、高容量以及每一半導體晶片能更小型化的方向發展,以滿足對小型多功能電子元件的迫切需求。隨著每個晶片中需內置更多功能,所需焊墊(bonding pad)的數量增加,而增加了晶片的尺寸,導致每一半導體晶片的製造成本也隨之增加。假使可以在半導體晶片的邊緣提高每單位長度的焊墊安裝量,則可以降低成本。
欲縮小焊墊間的間距,即縮小相鄰兩焊墊之間的距離是有限制的。當相鄰兩焊墊之間的間距過細時,焊墊和相對應的內引線(inner lead)之間的接合精度會下降,且會產生電性缺陷。電性缺陷包括連接內引線與焊墊時,作為接合材料的相鄰兩凸塊間的短路。電性缺陷也包括當凸塊與焊墊之間的接觸面積不足時,會導致凸塊的接合強度(shear strength)不足。接合強度不足會增加引線與焊墊之間的連接被破壞的機會。
本發明實施例提供一種可具有較高接合強度的導電凸塊的晶片結構,以使其具有較高良率。
本發明實施例的一種晶片結構包括晶片主體以及多個導電凸塊。晶片主體包括主動面以及配置於主動面上的多個凸塊接墊。多個導電凸塊配置於晶片主體的主動面並分別連接至多個凸塊接墊,且至少一導電凸塊具有梯形形狀,該梯形形狀具有一對平行邊以及一對非平行邊。
本發明實施例的一種晶片結構包括晶片主體以及多個導電凸塊。晶片主體包括主動面以及配置於主動面上的接合部分的多個凸塊接墊。多個導電凸塊配置於晶片主體的主動面上的接合部分並分別連接至多個凸塊接墊。至少一導電凸塊包括一對平行邊以及一對非平行邊,且每一導電凸塊具有長軸,導電凸塊的長軸互相交叉於多個交叉點。
本發明實施例的一種晶片結構包括具有主動面的晶片主體以及配置於主動面上的多個凸塊接墊。多個導電凸塊配置於晶片主體的主動面上並分別連接至多個凸塊接墊,其中至少一導電凸塊具有一對平行邊,且平行邊的一邊具有第一寬度,而平行邊的另一邊具有第二寬度,第二寬度大於第一寬度。
基於上述,本發明實施例的晶片結構可以包括至少一具有梯形形狀的導電凸塊。每一導電凸塊可以具有長軸,而導電凸塊的長軸互相交叉於多個交叉點。藉由這樣的設置,導電凸塊與晶片主體之間的接觸面積可以增加,以改善導電凸塊於影響期間的接合強度。據此,具有梯形形狀的導電凸塊的晶片結構可以提供更好的可靠度與良率以滿足細間距的需求。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之各實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明,而並非用來限制本發明。並且,在下列各實施例中,相同或相似的元件將採用相同或相似的標號。
圖1是具有本發明一實施例的晶片結構的顯示面板的局部俯視示意圖。圖2是依據本發明一實施例的晶片結構的局部放大示意圖。應注意的是,為了說明的目的,以透視方式繪示圖1中晶片結構100的晶片主體110。請參照圖1及圖2。在本實施例中,晶片結構100包括晶片主體110以及多個導電凸塊120。多個導電凸塊120沿著晶片主體110的每一邊設置成一行或多行(圖1所示為沿著每一邊設置一行)。在本實施例中的晶片結構100可以應用於如圖1所示的顯示面板10中。舉例而言,顯示面板10可以是液晶顯示(Liquid crystal display, LCD)面板或發光二極體(Light Emitting Diode, LED)顯示面板,如有機發光二極體(OLED)顯示面板,但本發明不以此為限。在一些實施例中,晶片主體110可以包括矽基板、鍺基板、砷化鎵(GaAs)基板、鋁基板、氧化鋯基板、氮化矽基板、玻璃基板、陶瓷如碳化矽基板,或其他適宜的絕緣基板。晶片主體110包括主動面112以及配置於主動面112上的多個凸塊接墊114。導電凸塊120配置於晶片主體110的主動面112上。在一些實施例中,導電凸塊120分別連接至對應的凸塊接墊114。
在本實施例中,顯示面板10可以包括玻璃基板200。玻璃基板200包括主動區域210以及連接至主動區域210的一側的周邊區域220。在本實施例中,玻璃基板200更可包括畫素陣列212以及多條扇出(fan-out)線路。多個畫素電極以陣列的形式設置在主動區域210上,以形成畫素陣列212。周邊區域220可以配置於主動區域210的一側,且扇出線路配置於周邊區域220上,以如圖1所示之連接畫素陣列212與晶片結構100。在一些實施例中,晶片結構100可以設置於玻璃基板200的周邊區域220上。換句話說,晶片結構100可以是玻璃覆晶(chip on glass, COG)結構。在一些實施例中,晶片結構100可以經由導電凸塊120設置於基板上,且基板可以是接合於玻璃基板200上的彈性薄膜。換句話說,晶片結構100可以是薄膜覆晶(chip on film, COF)結構。在另一些實施例中,基板200可以是塑膠彈性薄膜,且晶片結構100經由導電凸塊120安裝於塑膠彈性薄膜的周邊區域220上。換句話說,晶片結構100可以是塑膠覆晶(chip on plastic, COP)結構。
在一些實施例中,晶片結構100可以是安裝於周邊區域220上且可以包括處理器,以驅動顯示面板10的驅動積體電路(driver IC)。在本實施例中,晶片結構100可以整合有至少一被動裝置如電阻、電容、電感或其組合。然而,本實施例僅用於說明,本發明不限制晶片結構100的類型。在其他的實施例中,晶片結構100可以是快閃記憶體(flash memory)晶片。
請參照圖2,在一些實施例中,導電凸塊120中的至少一個具有梯形的形狀,其具有一對平行邊S1、S2以及一對非平行邊S3、S4。在本實施例中,每一導電凸塊120具有長軸A1,而導電凸塊120的長軸A1互相交叉於多個交叉點(如圖所示)。換句話說,導電凸塊120的長軸A1不會匯聚於一點。在可替換的實施例中,導電凸塊120的長軸A1可以匯聚於一點。在本實施例中,每一平行邊S1、S2比每一非平行邊S3、S4短。在一些實施例中,多個導電凸塊120中的相鄰兩者之間的間距(邊到邊的距離)相同及/或導電凸塊120的面積也可以相同。
藉由導電凸塊120具有梯形形狀的配置,可使導電凸塊120與晶片主體110之間的接觸面積增加,因此,可改善導電凸塊120於受到衝擊時的剪力強度(shear strength)。據此,具有梯形導電凸塊的晶片結構可以提供更好的可靠度以滿足細間距(fine-pitch)的要求。
在一些實施例中,導電凸塊120以配置導電凸塊120的接合部分R1的中心線CL為中心而呈對稱設置。舉例而言,導電凸塊120可以包括中心導電凸塊120a以及多個非中心導電凸塊120b。中心導電凸塊120a沿配置導電凸塊120的接合部分R1的中心線CL配置。在本實施例中,中心導電凸塊120a可具有等腰梯形的形狀。換句話說,中心導電凸塊120a以中心線CL為中心相互對稱。每個非中心導電凸塊120b可以具有鈍角梯形的形狀,且位於中心導電凸塊120a的兩側。在一些實施例中,多個非中心導電凸塊120b以中心導電凸塊120a為中心而呈對稱設置。
在一些實施例中,每一導電凸塊120具有夾在平行邊的其中一者(例如平行邊S2)與非平行邊的其中一者(例如非平行邊S4)之間的銳內角(acute internal angle)θ1。在本實施例中,每一導電凸塊120的銳內角θ1的角度會隨著銳內角θ1越靠近導電凸塊120中的中心導電凸塊120a而增加。
在本實施例中,每一導電凸塊120的平行邊S1、S2包括短邊S1以及長邊S2。相較於每一導電凸塊120的長邊S2,連接每一導電凸塊120的凸塊接墊114可以被設置成較靠近每一導電凸塊120的短邊S1。
在本實施例中,每一導電凸塊120的平行邊S1、S2包括短邊(例如短邊S1)以及長邊(例如長邊S2)。短邊S1可以位於較靠近晶片主體110中的內側區域,而長邊S2可以位於較靠近晶片主體110的外側區域。換句話說,長邊S2如圖1與圖2所示之較靠近晶片主體110的外邊緣E1。
圖3是依據本發明一實施例的晶片結構的局部放大示意圖。應注意的是,圖3中所示的晶片結構100a包含許多與圖1及圖2中所揭示的晶片結構100相同或相似的特徵。為了簡潔明瞭,相同或相似的特徵於此不再贅述,且相同或相似的標號表示相同或相似的元件。圖3所示的晶片結構100a與圖1及圖2所示的晶片結構100之間的主要差異描述如下。
請參照圖3,在本實施例中,每一導電凸塊120的平行邊S1、S2包括短邊S1以及長邊S2。短邊S1可以被設置成較靠近晶片主體110的外側區域,而長邊S2可以被設置成較靠近晶片主體110的內側區域。換句話說,短邊S1較靠近晶片主體110的外邊緣E1。應注意的是,在不同的實施例中,短邊S1可以被調整為較靠近晶片主體110的內側區域,而長邊S2可以被調整為位於較靠近晶片主體110的外側區域。
圖4是依據本發明一實施例的晶片結構的導電凸塊的示意圖。應注意的是,圖4中所示的導電凸塊120’包含許多與圖2及圖3中所揭示的導電凸塊120相同或相似的特徵。為了簡潔明瞭,相同或相似的特徵於此不再贅述,且相同或相似的標號表示相同或相似的元件。圖4所示的導電凸塊120’與圖2及圖3所示的導電凸塊120之間的主要差異描述如下。
在本實施例中,每一導電凸塊120’的平行邊S1、S2包括短邊S1以及長邊S2。相較於每一導電凸塊120’的短邊S1,與每一導電凸塊120’連接的凸塊接墊114可以被設置成較靠近每一導電凸塊120’的長邊S2。
在一些實施例中,多個導電凸塊120’中的其中一者的凸塊長度h1可以實質上小於或等於250微米(micrometer, μm)。舉例而言,在平行邊S1與S2之間的最短距離h1實質上小於或等於252微米。多個導電凸塊120’中的其中一者的凸塊寬度(例如:短邊S1的長度)L1可以實質上大於或等於13微米。舉例而言,在多個導電凸塊120’中的其中一者的短邊S1的長度L1實質上等於或大於11微米。在平行邊S1與S2之間的最短距離h1與在平行邊中的短邊S1的長度L1的比值實質上等於或大於0.05。多個導電凸塊120’中的其中一者的凸塊面積可以實質上大於或等於195平方微米(μm2
),且實質上小於或等於14000平方微米。多個導電凸塊120’中的其中一者的銳內角θ1可以實質上大於或等於30度。每一凸塊接墊114的面積與每一導電凸塊120’的面積的比值可以實質上大於或等於0,且實質上小於或等於80%。應注意的是,此處所提及的導電凸塊120’與凸塊接墊114的尺寸範圍也可以應用於其他實施例所揭示的導電凸塊與凸塊接墊中。
圖5是依據本發明一實施例的晶片結構的導電凸塊的示意圖。應注意的是,圖5中所示的導電凸塊120’’包含許多與圖2及圖3中所揭示的導電凸塊120相同或相似的特徵。為了簡潔明瞭,相同或相似的特徵於此不再贅述,且相同或相似的標號表示相同或相似的元件。圖5中所示的導電凸塊120’’與圖2及圖3所示的導電凸塊120之間的主要差異描述如下。
請參照圖5,在本實施例中,每一導電凸塊120’’的平行邊S1、S2包括短邊S1以及長邊S2。與每一導電凸塊120’’連接的凸塊接墊114與每一導電凸塊120’’的長邊S2之間的距離及其與每一導電凸塊120’’的短邊S1之間的距離相同。在其他實施例中,凸塊接墊114可以被配置於晶片主體110中的任何位置,只要凸塊接墊114可以與對應的導電凸塊120’’連接。在一些實施例中,多個導電凸塊120’中的其中一者可以包括倒角(chamfered angle)或平滑角隅(smooth corner),如圖5所示。換句話說,導電凸塊120’’的角隅可以不具有尖銳(sharp)邊緣。
圖6是依據本發明一實施例的晶片結構的局部放大示意圖。應注意的是,圖6中所示的晶片結構100b包含許多與圖2中所揭示的晶片結構100相同或相似的特徵。為了簡潔明瞭,相同或相似的特徵於此不再贅述,且相同或相似的標號表示相同或相似的元件。圖6中所示的晶片結構100b與圖2所示的晶片結構100之間的主要差異描述如下。
在一些實施例中,導電凸塊120以配置導電凸塊120的接合部分R1的中心線CL為中心而呈不對稱設置。舉例而言,導電凸塊120可以包括中心導電凸塊120a以及多個非中心導電凸塊120b、120c。非中心導電凸塊120b、120c以中心導電凸塊120a為中心而呈不對稱設置。在一些實施例中,相鄰兩導電凸塊120之間的間距(邊到邊的距離)可以彼此不同及/或導電凸塊120的面積也可以彼此不同。在一些實施例中,導電凸塊120可以包括至少一附加導電凸塊120c,其可以具有梯形的形狀,且具有第一對平行邊與第二對平行邊。舉例而言,附加導電凸塊120c可以具有矩形的形狀或平行四邊形的形狀,如圖6所示。應注意的是,為了簡潔明瞭,圖6至圖7省略了圖1至圖5中的凸塊接墊114。
在一些實施例中,不同組的導電凸塊可以例如交替地(alternately)設置在同一行中。在相同或不同實施例中,不同組的導電凸塊可以被設置於不同行。在相同或不同實施例中,不同組的導電凸塊可以在同一行中一個組接著一個組地設置。舉例而言,在圖6的替代性實施例中,具有梯形的形狀的導電凸塊與具有矩形的形狀或平行四邊形的形狀的附加導電凸塊可以在同一行中交替地佈置。在一些其他的實施例中,具有梯形的形狀的導電凸塊可以設置在一或多個第一行中,且具有矩形的形狀或平行四邊形的形狀的附加導電凸塊可以設置於一或多個不同於第一行的第二行中。
圖7是依據本發明一實施例的晶片結構的局部放大示意圖。應注意的是,圖7中所示的晶片結構100c包含許多與圖2中所揭示的晶片結構100相同或相似的特徵。為了簡潔明瞭,相同或相似的特徵於此不再贅述,且相同或相似的標號表示相同或相似的元件圖7中所示的晶片結構100c與圖2所示的晶片結構100之間的主要差異描述如下。
請參照圖7,導電凸塊120可以包括具有至少一第一導電凸塊120a的第一組以及具有至少一第二導電凸塊120b的第二組,其中第一導電凸塊120a與第二導電凸塊120b可以交替地設置。另外,導電凸塊的第一組的平行邊的短/長邊可以沿與導電凸塊的第二組的平行邊的短/長邊相同或不同的方向設置。在一些示例性的實施例中,如圖7所示,至少一第一導電凸塊120a的平行邊S1、S2包括短邊S1以及長邊S2。在一些實施例中,第一導電凸塊120a的短邊S1位於較靠近晶片主體110的內側區域,而第一導電凸塊120a的長邊S2位於較靠近晶片主體110的外側區域(外邊緣E1)。另一方面,第二導電凸塊120b的平行邊S1、S2包括短邊S1以及長邊S2。第二導電凸塊120b的短邊S1位於較靠近晶片主體110的外側區域(外邊緣E1),而第二導電凸塊120b的長邊S2位於較靠近晶片主體110的內側區域。在一些其他實施例中,第一導電凸塊的至少其中一者與第二導電凸塊的至少其中一者的短邊S1及長邊S2中的其中一者或兩者可以被調整為位於較靠近晶片主體110的其他不同區域中。此外,應注意的是,在不同實施例中,導電凸塊的短/長邊的方向可以有規律地交替(如圖7所示,一個接一個交替),或者根據設計需求可以不規則交替。
應注意的是,在每個實施例中,凸塊的尺寸、面積、形狀、短邊/長邊和/或間距的方向可以相同或(至少部分地)不同。
綜上所述,本發明實施例的晶片結構可以包括至少一具有梯形的形狀的導電凸塊。每一導電凸塊可以具有長軸,而導電凸塊的長軸互相交叉於多個交叉點。藉由這樣的設置,導電凸塊與晶片主體之間的接觸面積可以增加,以改善導電凸塊在受到衝擊時的剪力強度。據此,具有梯形的形狀的導電凸塊的晶片結構可以提供更好的可靠度與良率以滿足細間距的需求。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10:顯示面板
100、100a、100b、100c:晶片結構
110:晶片主體
120、120a、120b、120c、120’、120’’:導電凸塊
112:主動面
114:凸塊接墊
200:玻璃基板
210:主動區域
220:周邊區域
212:畫素陣列
S1、S2、S3、S4:邊
A1:長軸
R1:接合部分
CL:中心線
θ1:角度
E1:邊緣
h1:長度
L1:凸塊寬度/短邊長度
圖1是具有本發明一實施例的晶片結構的顯示面板的局部俯視示意圖。
圖2是依據本發明一實施例的晶片結構的局部放大示意圖。
圖3是依據本發明一實施例的晶片結構的局部放大示意圖。
圖4是依據本發明一實施例的晶片結構的導電凸塊的示意圖。
圖5是依據本發明一實施例的晶片結構的導電凸塊的示意圖。
圖6是依據本發明一實施例的晶片結構的局部放大示意圖。
圖7是依據本發明一實施例的晶片結構的局部放大示意圖。
100:晶片結構
110:晶片主體
120、120a、120b:導電凸塊
112:主動面
114:凸塊接墊
S1、S2、S3、S4:邊
A1:長軸
R1:接合部分
CL:中心線
θ1:角度
E1:邊緣
Claims (38)
- 一種晶片結構,包括:一晶片主體,包括一主動面以及配置於所述主動面上的多個凸塊接墊;以及多個導電凸塊,配置於所述晶片主體的所述主動面上,且分別連接至所述多個凸塊接墊,其中以朝向所述主動面的俯視觀之:所述多個導電凸塊的至少其中之二各具有梯形形狀,所述梯形形狀具有一對平行邊以及一對非平行邊,其中所述平行邊包括一短邊及一長邊,所述多個導電凸塊中具有所述梯形形狀且相鄰的兩個的所述短邊較靠近所述晶片主體中的一內側區域或一外側區域的其中之一,且多個導電凸塊中具有所述梯形形狀且相鄰的兩個的所述長邊較靠近所述晶片主體中的所述內側區域或所述外側區域的其中另一;且所述多個導電凸塊中的每一個具有一長軸,且所述導電凸塊的所述長軸互相交叉於多個交叉點。
- 如請求項1所述的晶片結構,其中所述平行邊中的每一個比所述非平行邊中的每一個短。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊包括具有等腰梯形的形狀的一中心導電凸塊。
- 如請求項3所述的晶片結構,其中所述多個導電凸塊更包括具有鈍角梯形的形狀的多個非中心導電凸塊,且所述多個非中心導電凸塊位於所述中心導電凸塊的兩側。
- 如請求項4所述的晶片結構,其中所述多個非中心導電凸塊以所述中心導電凸塊為中心而呈對稱設置。
- 如請求項4所述的晶片結構,其中所述多個非中心導電凸塊以所述中心導電凸塊為中心而呈不對稱設置。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊以設置所述多個導電凸塊的一接合部分的一中心線為中心而呈對稱設置。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊以配置所述多個導電凸塊的一接合部分的一中心線為中心而呈不對稱設置。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的所述平行邊包括所述短邊以及所述長邊,相較於所述多個導電凸塊中的每一個的所述長邊,連接所述多個導電凸塊中的每一個的所述凸塊接墊較靠近所述多個導電凸塊中的每一個的所述短邊。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的所述平行邊包括所述短邊以及所述長邊,相較於所述多個導電凸塊中的每一個的所述短邊,連接所述多個導電凸塊 中的每一個的所述凸塊接墊較靠近所述多個導電凸塊中的每一個的所述長邊。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的所述平行邊包括所述短邊以及所述長邊,連接所述多個導電凸塊中的每一個的所述凸塊接墊與所述多個導電凸塊中的每一個的所述長邊之間的距離及其與所述多個導電凸塊中的每一個的所述短邊之間的距離相同。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的所述平行邊包括所述短邊以及所述長邊,所述短邊較靠近所述晶片主體中的所述外側區域,而所述長邊較靠近所述晶片主體的所述內側區域。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的所述平行邊包括所述短邊以及所述長邊,所述短邊位於較靠近所述晶片主體中的所述內側區域,而所述長邊位於較靠近所述晶片主體的所述外側區域。
- 一種晶片結構,包括:一晶片主體,包括一主動面以及配置於所述主動面上的多個凸塊接墊;以及多個導電凸塊,配置於所述晶片主體的所述主動面上,且分別連接至所述多個凸塊接墊,其中以朝向所述主動面的俯視觀之,所述多個導電凸塊的至少其中之一具有梯形形狀,所述梯形形狀具有一對平行邊以及一對非平行邊,且所述多個導電凸塊中 的每一個具有一長軸,且所述導電凸塊的所述長軸互相交叉於多個交叉點,其中所述導電凸塊更包括至少一附加導電凸塊,所述至少一附加導電凸塊具有一第一對平行邊與一第二對平行邊。
- 如請求項14所述的晶片結構,其中所述至少一附加導電凸塊具有矩形形狀或平行四邊形的形狀。
- 如請求項1所述的晶片結構,其中所述平行邊之間的一最短距離實質上等於或小於252微米。
- 如請求項1所述的晶片結構,其中所述短邊的長度實質上等於或大於11微米。
- 如請求項1所述的晶片結構,其中所述平行邊之間的一最短距離與所述平行邊中的所述短邊的一長度的一比值實質上等於或大於0.05。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的一面積實質上等於或大於195平方微米,且實質上等於或小於14000平方微米。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中的每一個的一銳內角實質上等於或小於30度。
- 如請求項1所述的晶片結構,其中所述多個凸塊接墊中的每一個的一面積與所述多個導電凸塊中的每一個的一面積的一比值實質上等於或大於0,且實質上等於或小於80%。
- 如請求項1所述的晶片結構,其中所述晶片結構經由所述多個導電凸塊設置於一基板上。
- 如請求項22所述的晶片結構,其中所述基板為一薄膜,且所述晶片結構為一薄膜覆晶(chip on film,COF)結構。
- 如請求項1所述的晶片結構,其中所述晶片結構為塑膠覆晶結構(chip on plastic,COP)。
- 如請求項1所述的晶片結構,其中所述晶片結構為用以驅動一顯示面板的一驅動積體電路(driver IC)。
- 如請求項1所述的晶片結構,其中任一所述多個導電凸塊中相鄰兩者之間的一間距相同。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊中至少相鄰兩者之間的一間距彼此不同。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊的面積相同。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊的面積彼此不同。
- 如請求項1所述的晶片結構,其中所述多個導電凸塊的其中一者更包括一倒角。
- 一種晶片結構,包括:一晶片主體,包括一主動面以及配置於所述主動面上的一接合部分的多個凸塊接墊;以及多個導電凸塊,配置於所述晶片主體的所述主動面上的所述接合部分並分別連接至所述多個凸塊接墊,其中以朝向所述主動面的俯視觀之: 所述多個導電凸塊中相鄰的兩個各包括一對平行邊以及一對非平行邊,其中所述平行邊包括一短邊及一長邊,所述多個導電凸塊中相鄰的兩個的所述短邊較靠近所述晶片主體中的一內側區域或一外側區域的其中之一,且多個導電凸塊中相鄰的兩個的所述長邊較靠近所述晶片主體中的所述內側區域或所述外側區域的其中另一;且每一所述導電凸塊具有一長軸,所述導電凸塊的所述長軸互相交叉於多個交叉點。
- 一種晶片結構,包括:一晶片主體,包括一主動面以及配置於所述主動面上的多個凸塊接墊;以及多個導電凸塊,配置於所述晶片主體的所述主動面上並分別連接至所述多個凸塊接墊,其中以朝向所述主動面的俯視觀之:所述多個導電凸塊中相鄰的兩個各具有一對平行邊,且所述平行邊中較靠近所述晶片主體中的一內側區域或一外側區域的其中之一的一邊具有一第一寬度,而所述平行邊中較靠近所述晶片主體中的所述內側區域或所述外側區域的其中另一的另一邊具有一第二寬度,所述第二寬度大於所述第一寬度。
- 如請求項32所述的晶片結構,其中所述多個導電凸塊中的每一個具有一長軸,所述導電凸塊的所述長軸互相交叉於多個交叉點。
- 如請求項32所述的晶片結構,其中所述多個導電凸塊中的至少一個具有梯形的形狀。
- 一種晶片結構,包括:一晶片主體,包括一主動面以及配置於所述主動面上的多個凸塊接墊;以及多個導電凸塊,配置於所述晶片主體的所述主動面上並分別連接至所述多個凸塊接墊,其中以朝向所述主動面的俯視觀之,所述多個導電凸塊的至少其中之一具有梯形形狀,所述梯形形狀具有一對平行邊以及一對非平行邊,所述多個導電凸塊包括一中心導電凸塊與多個非中心導電凸塊,所述多個非中心導電凸塊以所述中心導電凸塊為中心而呈不對稱設置,其中所述多個非中心導電凸塊包括彼此相鄰的第一組矩形形狀的凸塊以及彼此相鄰的第二組梯形形狀的凸塊。
- 如請求項35所述的晶片結構,其中所述第二組梯形形狀的凸塊面積沿著遠離所述第一組矩形形狀的凸塊的方向增加。
- 如請求項35所述的晶片結構,其中所述第二組梯形形狀的凸塊中的每一個具有包括夾在所述平行邊的其中一者與所述非平行邊中的其中一者之間一銳內角,且所述第二組梯形形狀的凸塊的銳內角沿著靠近所述第一組矩形形狀的凸塊的方向而增加。
- 如請求項35所述的晶片結構,其中所述第一組矩形形狀的凸塊的面積相同。
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US20190198473A1 (en) | 2019-06-27 |
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