TWI729796B - Manufacturing method of semiconductor device - Google Patents

Abstract

The manufacturing method of the semiconductor device of the present invention includes: (I) a first protective film forming film (20) provided with a first support sheet (23) and a thermosetting resin layer (25) in order to heat The process of bonding the curable resin layer (25) as the bonding surface on the surface of the semiconductor wafer (10) where the bumps (11) are provided; (II) peeling off the second layer from the thermosetting resin layer (25) 1 Process of supporting sheet (23); (III) Process of heating and curing the thermosetting resin layer (25) to form a protective film; and (IV) Cutting the semiconductor wafer at the same time as the thermosetting resin layer or protective film (10) The project.

Description

Manufacturing method of semiconductor device

The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device using a semiconductor wafer whose bump surface is protected by a protective film.

In the past, semiconductor devices were manufactured using a mounting method called a flip-chip method. In the flip-chip method, electrode portions called bumps are formed on the surface of a semiconductor wafer, and the surface of the wafer is opposed to a substrate, etc., and the semiconductor wafer is mounted on the substrate.

For the semiconductor wafers or semiconductor wafers used in the flip-chip method, for various purposes, there are cases where a resin layer with various functions is provided on the surface of the wafer provided with bumps. Furthermore, when the semiconductor wafer is generally ground on the back side, in order to protect the surface of the wafer, a backside polishing sheet is attached. Therefore, in the past, there has been a case where a back polishing sheet and various resin layers are laminated to form an integrated laminate sheet.

In Patent Document 1, as such a laminated sheet, it is disclosed that a thermosetting resin layer is provided in contact with the circuit surface, and a thermoplastic resin layer having flexibility is directly laminated on this layer, and further laminated In heat On the plastic resin layer, the outermost layer composed of resin film or the like. The laminated sheet is adhered to the surface of the semiconductor wafer during back grinding to protect the semiconductor wafer. Furthermore, after the backside grinding, the thermoplastic resin layer and the outermost layer are peeled off from the thermosetting resin layer. In addition, the thermosetting resin layer remaining on the semiconductor wafer is hardened after the semiconductor wafer is mounted on the substrate. It is used as a sealing resin.

[Prior Technical Literature]

[Patent Literature]

[Patent Document 1] JP 2005-28734 A

However, the stress of the bump system provided on the surface of the wafer is concentrated on the bump neck which is the connecting part of the semiconductor wafer and the bump, and it is easy to cause damage. In Patent Document 1, although a thermosetting resin layer is provided on the bump surface of the semiconductor wafer, the resin layer only seals the gap between the semiconductor wafer and the substrate, and does not guarantee that the bump neck can be avoided by such a sealing resin. damaged.

The present invention was created in view of the above-mentioned problems. The object of the present invention is to provide a method for manufacturing a semiconductor device that can prevent damage to the bump neck in a semiconductor wafer with bumps.

As a result of careful research, the inventors found that through a specific process, a thermosetting resin layer was laminated on the surface (bump surface) of the semiconductor wafer provided with bumps and thermally cured, and the bump neck It is embedded in the protective film and can be fully protected, and the following invention is completed. The present invention provides the following (1) to (7).

(1) A method of manufacturing a semiconductor device, comprising:

The first protective film forming film provided with the first support sheet and the thermosetting resin layer in this order is bonded to the semiconductor wafer provided with bumps using the thermosetting resin layer as the bonding surface The surface engineering;

The process of peeling the first support sheet from the thermosetting resin layer;

The process of cutting the above-mentioned semiconductor wafer simultaneously with the thermosetting resin layer; and

The process of hardening the above-mentioned thermosetting resin layer by heating during reflow to form a protective film.

(2) The method of manufacturing a semiconductor device as described in (1) above, wherein

Further equipped with:

The process of attaching the second protective film forming layer to the back of the semiconductor wafer;

The process of heating the above-mentioned second protective film forming layer to form a second protective film; and

A process of further laminating a second support sheet on the second protective film forming layer on the back surface of the semiconductor wafer, or on the upper surface of the second protective film.

(3) The method of manufacturing a semiconductor device as described in (1) above, wherein

Further equipped with:

A second protective film forming film provided with a second support sheet and a second protective film forming layer provided on the second support sheet is attached so that the second protective film forming layer becomes a bonding surface The engineering of the backside of the aforementioned semiconductor wafer; and

A process of heating the above-mentioned second protective film forming layer to form a second protective film.

(4) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein

The semiconductor wafer, which is cut into pieces by the above-mentioned dicing, is arranged on the chip-mounting substrate so that its surface side faces the chip-mounting substrate, and is fixed to the above-mentioned chip-mounting substrate by reflow Use the substrate.

(5) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein

The above-mentioned thermosetting resin layer and the above-mentioned second protective film forming layer are simultaneously heated by reflow, so that these layers are thermally hardened.

(6) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein

The first support sheet includes a first substrate and a first adhesive layer provided on a surface of one of the first substrates, and the thermosetting resin layer is provided on the first adhesive layer,

^{The melt viscosity of the thermosetting resin layer was 1×10 2} Pa at the temperature when the first protective film formation film was bonded to the semiconductor wafer. 2×10 ⁴ Pa above S. S is not full,

^{The shear modulus of the first adhesive layer is 1×10 3} Pa or more and 2×10 ⁶ Pa or less at the temperature when the first protective film forming film is bonded to the semiconductor wafer.

(7) The method of manufacturing a semiconductor device as described in any one of (1) to (3) above, wherein

The thermosetting resin layer has a thickness of 0.01 to 0.99 times the height of the bump.

In the present invention, the bump neck is buried by the protective film formed on the bump surface of the semiconductor wafer to prevent the bump neck from being damaged.

10: Semiconductor wafer

11: bump

15: Semiconductor wafer

20: Film for forming the first protective film

21: The first substrate

22: The first adhesive layer

23: The first support piece

25: Thermosetting resin layer

25A: Protective film

30: Film for forming the second protective film

31: The second substrate

32: The second adhesive layer

33: The second support piece

35: The second protective film forming layer

35A: 2nd protective film

40: Substrate for chip mounting

FIG. 1 is a schematic cross-sectional view showing a semiconductor wafer with bumps formed on the surface.

Fig. 2 is a schematic cross-sectional view showing a first film for forming a protective film.

Fig. 3 is a schematic cross-sectional view showing how the first protective film forming film is stuck on the semiconductor wafer.

4 is a schematic cross-sectional view showing a process of heating a semiconductor wafer on which a thermosetting resin layer is laminated.

FIG. 5 is a schematic cross-sectional view showing the semiconductor wafer at the time of dicing.

Figure 6 is a diagram showing that the semiconductor wafers that have been individualized are placed on the wafer. A schematic cross-sectional view of the state of the substrate for chip mounting.

FIG. 7 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a second protective film forming layer is laminated on the back surface.

FIG. 8 is a schematic diagram showing a process of dicing a semiconductor wafer having a protective film and a second protective film formed on the front and back surfaces, respectively.

FIG. 9 is a schematic diagram showing a process of heating a semiconductor wafer having a thermosetting resin layer and a second protective film forming layer formed on the front and back surfaces, respectively.

Fig. 10 is a schematic cross-sectional view showing a second film for forming a protective film.

11 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a second protective film forming thin film is bonded to the back surface.

FIG. 12 is a schematic diagram showing a process of heating a semiconductor wafer on which a thermosetting resin layer and a second protective film forming thin film are formed on the surface and the back surface, respectively.

Hereinafter, a specific description will be given of the implementation mode of the present invention.

(First implementation type)

The semiconductor wafer 10 used in this manufacturing method is a bumped wafer with bumps 11 provided on the surface 10A as shown in FIG. 1. The bump 11 is usually provided with plural numbers. The semiconductor wafer 10 is not particularly limited, namely It can be a silicon wafer, even ceramic, glass, sapphire, etc. wafers. Although the thickness of the semiconductor wafer 10 is not particularly limited, it is preferably 0.625 to 0.825 mm. The material of the bump 11 is not particularly limited, and various metal materials are used, preferably solder. Furthermore, the shape of the bump 11 is not particularly limited, and it may be a round shape as shown in FIG. 1 or any other shape. Furthermore, although the height of the bump 11 is not limited, it is usually 5 to 1000 μm, preferably 50 to 500 μm.

The manufacturing method of the semiconductor device of the first embodiment of the present invention has at least the following processes.

(I) The first protective film forming film provided with the first support sheet and the thermosetting resin layer in this order is bonded to the semiconductor wafer with the thermosetting resin layer as the bonding surface. Engineering of the surface of the bump;

(II) The process of peeling the first support sheet from the thermosetting resin layer;

(III) The process of heating the thermosetting resin layer to harden it to form a protective film; and

(IV) The process of cutting semiconductor wafers at the same time as the protective film.

Hereinafter, each process will be described in detail with respect to the manufacturing method of this embodiment.

[Engineering (I)]

In the process (I), first, as shown in FIG. 2, prepare a first protective film forming film including a first support sheet 23 and a thermosetting resin layer 25 provided on the first support sheet 23 20. In addition, the first protective film forming film 20, as shown in FIG. 3, has a thermosetting resin layer 25 As a method of the bonding surface, it is bonded to the surface (bump surface) 10A of the semiconductor wafer 10.

Here, in the first protective film forming film 20, the first support sheet 23 is provided with a first substrate 21 as shown in FIGS. 2 and 3, and a first substrate 21 provided on one surface of the first substrate 21. 1 Adhesive layer 22, and although the thermosetting resin layer 25 may be stuck on the first adhesive layer 22, even if the first adhesive layer 22 is omitted, it is on one surface of the base material 21 The thermosetting resin layer 25 may be directly pasted. Furthermore, even if one of the surfaces of the first base material 21 is surface-treated, or the first support sheet 23 is provided with a layer other than the adhesive layer, the layer or surface treatment surface is interposed to be adhered to the thermosetting The resin layer 25 may also be used. Furthermore, even if an intermediate layer is provided between the first adhesive layer 22 and the first base material 21.

In addition, a release material (not shown) may be further pasted on the thermosetting resin layer 25 of the first protective film forming film 20. The release material protects the thermosetting resin layer 25 until the first protective film forming film 20 is used. The peeling material is peeled and removed from the first protective film forming film 20 before being stuck to the semiconductor wafer 10.

Although the first adhesive layer 22 is formed from various adhesives, it may be formed by an energy-ray curable adhesive that is cured by irradiation of energy rays and has a reduced adhesive force with respect to the adherend.

The bonding of the first protective film forming thin film 20 to the semiconductor wafer 10 is preferably performed at a bonding temperature of 30 to 150°C, and more preferably at 40 to 100°C.

Furthermore, the first protective film forming film 20 is preferably applied while pressing, for example, it is preferably performed while being pressed by a pressing means such as a pressure bonding roller. Alternatively, the first protective film forming film 20 may be pressure-bonded to the semiconductor wafer 10 by a vacuum laminator.

When the first protective film forming film 20 is attached to the semiconductor wafer 10, as shown in FIG. 3, the bump 11 penetrates the thermosetting resin layer 25 and protrudes to the first support sheet 23 side. In this way, by protruding the bump 11 to the side of the first support sheet 23, the bump 11 can be easily fixed by contacting the bump 11 to the electrode or the like on the chip mounting substrate by reflow described later.

However, the bump 11 does not protrude to the side of the first support sheet 23 and may be embedded in the thermosetting resin layer 25. Even in such a state, in process (III) or the like, the thermosetting resin layer 25 may be heated by heating to cause the bump 11 to protrude.

The first support sheet 23 includes a first base material 21, and a first adhesive layer 22 provided on one surface of the first base material 21, and a thermosetting resin layer 25 is provided on the first adhesive layer 22 ^{In this case, the melt viscosity of the thermosetting resin layer 25 is 1×10 2} Pa at the temperature (bonding temperature) when the first protective film forming film 20 is bonded to the semiconductor wafer 10. 2×10 ⁴ Pa above S. S is less than full, and the shear elastic modulus of the first adhesive layer 22 at the bonding temperature is ^{preferably 1×10 3} Pa or more and 2×10 ⁶ Pa or less. Furthermore, the melt viscosity of the thermosetting resin layer 25 is 1×10 ³ Pa. 1×10 ⁴ Pa above S. If S is less than full, the above-mentioned shear modulus of the first adhesive layer 22 is ^{more preferably 1×10 4} Pa or more and 5×10 ⁵ Pa or less.

At the bonding temperature, the shear elasticity of the first adhesive layer 22 The temperature and the melt viscosity of the thermosetting resin layer 25 are set within the above range. The thermosetting resin layer 25 embeds the bump neck that is the root portion of the bump 11, and it is easy to heat the front end of the bump 11 The curable resin layer 25 protrudes.

The melt viscosity of the thermosetting resin layer 25 can be adjusted by, for example, changing the blending amount of each material or the type of each material in the thermosetting resin composition described later. In addition, the shear elastic modulus of the first adhesive layer 22 can be adjusted by changing the type of adhesive. In addition, when the first adhesive layer 22 is formed with an energy-ray-curable adhesive, the first support sheet 23 is irradiated with energy ray before the semiconductor wafer 10 is adhered to partially or completely harden it. , Can adjust the shear elasticity rate.

In addition, the melt viscosity of the thermosetting resin layer is a value measured by a parallel plate method using a rheometer (manufactured by HAAKE Corporation, RS-1). More specifically, it is the value when the measurement is performed in the range of room temperature to 250°C under the conditions of a gap of 100 μm, a rotating cone diameter of 20 mm, and a rotation speed of 10 s ^-1.

Furthermore, the shear elastic modulus of the adhesive layer was measured by forming an adhesive layer with a thickness of 0.2 mm using a shear modulus measuring device (manufactured by Rheometric Corporation, ARES). Specifically, the temperature was set to the same temperature as the bonding temperature, and the shear modulus was measured under the conditions of a frequency of 1 Hz, a plate diameter of 7.9 mmΦ, and a skew of 1%. Furthermore, during bonding, when the adhesive layer is hardened by energy rays, the adhesive layer is hardened under the same conditions to measure the shear elastic modulus.

The thermosetting resin layer 25 has the height of the bump 11 (convex A thickness of 0.01 to 0.99 times of the block height is preferred. By setting the thickness of the thermosetting resin layer 25 to be 0.01 times or more the height of the bump, the bump neck is buried in the protective film, and it becomes easy to prevent the bump neck from being damaged. In addition, by setting it to 0.99 times or less, it becomes easy to make the tip of the bump protrude from the thermosetting resin layer 25. From these viewpoints, it is more preferable that the thermosetting resin layer 25 has a thickness of 0.1 to 0.9 times the bump height.

In addition, although the thickness of the thermosetting resin layer 25 is not limited, it is usually 5 to 500 μm, preferably 10 to 100 μm.

[Engineering (II)]

In the process (II), after the above-mentioned process (I), the first support sheet 23 adhered to the surface of the semiconductor wafer 10 is peeled from the thermosetting resin layer 25. After this peeling, the thermosetting resin layer 25 remains as it is on the semiconductor wafer 10 as shown in FIG. 4.

In the case where the first adhesive layer 22 is formed with an energy-ray curable adhesive, the first adhesive layer 22 is irradiated with energy rays before the first support sheet 23 is peeled from the semiconductor wafer 10 in the process (II) First, the first adhesive layer 22 is hardened. The first adhesive layer 22 is cured by energy ray irradiation, and since the adhesive force is reduced, it can be easily peeled off at the interface with the thermosetting resin layer 25.

The timing of irradiating the first adhesive layer 22 with energy rays to harden is not particularly limited, and the first support sheet 23 may be hardened before adhering to the semiconductor wafer 10. Furthermore, even after being pasted on the semiconductor wafer 10. Furthermore, even if the first adhesive layer 22 is 1 Before the support sheet 23 is attached to the semiconductor wafer 10, the energy ray is irradiated to the degree of incomplete curing to reduce the adhesive force. At the same time, after the support sheet 23 is attached to the semiconductor wafer 10, the energy ray is further irradiated to further harden the adhesive force. It can be even lower.

[Engineering (III)]

After the 1 support sheet 23 is peeled off in the process (II), the thermosetting resin layer 25 laminated on the surface of the semiconductor wafer 10 is heated. This heating is preferably performed by arranging and heating the semiconductor wafer 10 on which the thermosetting resin layer 25 is laminated, for example, in a heating furnace, as shown in FIG. 4. Since the thermosetting resin layer 25 contains a thermosetting resin, it is thermally cured by the above-mentioned heating and becomes a protective film 25A (see FIG. 5).

The above heating conditions are not particularly limited if the thermosetting resin contained in the thermosetting resin layer 25 is cured. For example, at 80 to 200°C for 30 to 300 minutes, preferably 100 to 180°C for 60 to 200 minutes. During the period.

[Engineering (IV)]

Next, the semiconductor wafer 10 with the protective film 25A formed on the bump surface is divided by dicing as shown in FIG. In this process, the protective film 25A and the semiconductor wafer 10 are simultaneously divided according to the shape of the semiconductor wafer 15.

The cutting method is not particularly limited, and well-known methods such as blade cutting, invisible laser cutting, and laser cutting can be used. To pass the protective film 25A and the semiconductor wafer 10, the cutting groove 17 is provided.

The dicing is performed, for example, as shown in FIG. 5, by attaching a second support sheet 33 to the back surface 10B side of the semiconductor wafer 10 to support the semiconductor wafer 10 while providing a cutting groove 17 from the surface 10A side of the semiconductor wafer 10.

In the configuration of FIG. 5, the second support sheet 33 includes a second base material 31, and a second adhesive layer 32 provided on one surface of the second base material 31, with the second adhesive layer 32 interposed therebetween. It is pasted on the semiconductor wafer 10. However, even if the second adhesive layer 32 is omitted for the second support sheet 33, the surface of the semiconductor wafer 10 that is attached to the second substrate 31 may be surface-treated, or a layer other than the adhesive layer may be provided. Instead of the adhesive layer, it may be bonded to the back side of the semiconductor wafer 10 via the layer or the surface treatment surface. In addition, an intermediate layer (not shown) may be further provided between the second adhesive layer 32 and the second base material 31.

The second supporting sheet 33 is preferably a circle larger than the semiconductor wafer 10, and its central area is adhered to the semiconductor wafer 10, while the outer peripheral area is not adhered to the semiconductor wafer 10, but is preferably adhered to the support member 13. The supporting member 13 may be a member for supporting the second supporting member 33 during cutting, for example, a ring frame.

In addition, even if the second support sheet 33 is attached to the support member 13 without directly adhering the second adhesive layer 32, a re-peelable adhesive layer or the like is provided on the outer peripheral area of the second support sheet 33, and the adhesive layer is peeled off again. It can be pasted by waiting.

Although the second adhesive layer 32 is formed from various adhesives, It can be formed by energy ray hardening adhesive. In the case of forming with an energy ray-curable adhesive, before picking up described later, at least the area (central area) on the back side of the semiconductor wafer 10 bonded to the second adhesive layer 32 is irradiated with energy ray in advance , The second adhesive layer 32 is hardened and the adhesive force with respect to the back surface of the semiconductor wafer 10 is reduced. The timing of the energy ray irradiation is not particularly limited, and it may be performed even before bonding to the semiconductor wafer 10, and may be performed even after dicing and before picking up.

In addition, even if the outer peripheral region is not irradiated with energy rays, even if the purpose is to adhere to the support member 13, the adhesive force may be maintained in a high state.

In this embodiment, after dicing, the semiconductor chip 15 is picked up and mounted on the chip mounting substrate or the like by reflow, and then the gap between the semiconductor chip 15 and the chip mounting substrate is sealed by a sealing resin. The required engineering to manufacture semiconductor devices.

Here, the method of picking is not particularly limited. For example, the semiconductor wafer 15 is pushed up from the back side by pins or the like via the second support sheet 33, and the semiconductor wafer 15 is peeled from the second support sheet 33 by a vacuum collector. Wait for the method of picking.

The picked-up semiconductor wafer 15 is mounted on a wafer mounting substrate or the like by the following method, for example.

That is, as shown in FIG. 6, the semiconductor wafer 15 is arranged at a specific position of the wafer mounting substrate 40 such that its surface (that is, the bump surface) faces the wafer mounting substrate 40. Furthermore, by reflowing, the bump 11 is fixed to the chip mounting substrate 40, and the semiconductor chip 15 overlaps the chip. The carrier substrate 40 is electrically conducted. In the reflow, for example, a conductive material (not shown) such as solder provided on the substrate 40 is melted, and the conductive material is used to weld the bump 11 to the electrode of the wafer mounting substrate 40 and the like.

The reflow is performed, for example, by arranging the substrate 40 for chip mounting and the semiconductor wafer 15 arranged on the substrate 40 in a heating furnace and heating it. The heating in the reflow process is performed in an atmosphere of 120~300°C for 0.5~5 minutes, preferably 160~260°C for 1~2 minutes.

In the manufacturing method of this embodiment, the semiconductor wafer 10 is preferably subjected to back grinding. The back grinding is performed in a state where the first support sheet 23 is pasted on the surface 10A side of the semiconductor wafer 10. That is, the back grinding of semiconductor wafers is carried out between process (I) and process (II). Accordingly, the first support sheet 23 is not only a sheet for supporting the thermosetting resin layer 25, but also can be used as a back grinding sheet for protecting the bump surface during back grinding.

The back surface grinding of the semiconductor wafer is performed by, for example, fixing the surface side of the semiconductor wafer 10 to which the first support sheet 23 is attached to a fixed platform such as a jig platform, and grinding the back surface 10B by a grinder or the like. The thickness of the wafer 10 after grinding is not particularly limited, and is usually 5 to 450 μm, preferably about 20 to 400 μm.

Next, the material of each member used in this manufacturing method will be described in detail.

(Thermosetting resin layer)

The thermosetting resin layer 25 contains at least a thermosetting resin, and can be adhered to the wafer 10 at the same time, and it becomes the protective film 25A by being heated in the heat curing process mentioned later.

Examples of the thermosetting resin used in the thermosetting resin layer 25 include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, etc. . The thermosetting resin can be used alone or in combination of two or more kinds. As the thermosetting resin, an epoxy resin containing less ionic impurities that corrode semiconductor elements is particularly preferred. Furthermore, as the thermosetting resin, a curing agent may also be contained. For example, as a curing agent for an epoxy resin, a phenol resin can be suitably used.

In addition, in the thermosetting resin layer 25, the total amount of the thermosetting resin relative to the thermosetting resin layer (that is, the thermosetting resin composition) is preferably 5 to 70% by mass, more preferably 10 to 50% by mass. quality%.

In addition, the thermosetting resin layer 25 is preferably composed of a thermosetting resin composition containing a thermoplastic resin and a filler in addition to the thermosetting resin.

As the thermoplastic resin, acrylic resins, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers, phenoxy resins, etc. can be used, but among these, acrylic resins are preferred.

The thermosetting resin in the thermosetting resin layer is preferably 1-50% by mass, more preferably 5-40% by mass relative to the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).

Furthermore, as fillers, silicon dioxide, oxygen Powders such as aluminum, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride, etc., made into spherical beads, single crystal fibers, glass fibers, and other selected inorganic fillers. Among these, silica filler or alumina filler is preferred.

The filler in the thermosetting resin layer is preferably 5 to 75% by mass, more preferably 10 to 60% by mass relative to the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).

In addition, the thermosetting resin composition may contain other additives such as a coloring agent such as a curing accelerator, a coupling agent, a pigment, and a dye in addition to the above-mentioned components.

The hardening accelerator is not particularly limited. For example, at least one selected from amine hardening accelerators, phosphorus hardening accelerators, imidazole hardening accelerators, boron hardening accelerators, phosphorus-boron hardening accelerators, etc. can be used . Furthermore, as the coupling agent, a silane coupling agent can be used.

(1st and 2nd base material)

Although the first base material 21 is not particularly limited, it is preferable to use a resin film. In addition, although the second base material 31 is not particularly limited, it is preferable to use a resin film. The resin film may be a single-layer film composed of one type of resin film, or may be a multi-layer film in which a plurality of resin films are laminated.

Specific resin films include polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-bornene copolymer films, and borneol resin films. Olefin film; ethylene-vinyl acetate copolymer film, ethylene-(meth)acrylic acid copolymer Vinyl copolymer-based films such as plastic films, ethylene-(meth)acrylate copolymer films, etc.; polyvinyl chloride films, such as polyvinyl chloride films, vinyl chloride copolymer films, etc.; polyethylene terephthalate films, Polyester film such as polybutylene terephthalate film; polyurethane film, polyimide film, polyamide film, polyacetal film, polycarbonate film , Polystyrene film, fluororesin film, modified polyxylene oxide film, polyphenylene sulfide film, polysulfide film, etc. Furthermore, these cross-linked films and modified films like ionomers are also used.

The first and second base materials 21 and 31 may be of the same kind, and may be of different kinds. Furthermore, the first and second substrates 21, 31 are those that penetrate the energy ray when the adhesives constituting the first and second adhesive material layers 22, 23, respectively, are energy ray-type curable adhesives. .

The thicknesses of the first and second base materials 21 and 31 are, for example, 10 to 1000 μm, and preferably 50 to 200 μm.

(1st and 2nd adhesive layer)

Although the adhesives that form the first and second adhesive layers 22 and 32, respectively, are not particularly limited, but examples include acrylic adhesives, rubber adhesives, silicone adhesives, polyester adhesives, and urethane adhesives. Ester-based adhesives, polyolefin-based adhesives, vinyl alkyl ether-based adhesives, polyamide-based adhesives, fluorine-based adhesives, ethylene-diene copolymer-based adhesives, etc., among which acrylic adhesives are good. For example, when an acrylic adhesive is used for the first adhesive layer 22, it is easy to set the shear modulus of the adhesive layer to the above-mentioned range.

Adhesives are usually in addition to acrylic resins, rubber components, silicone resins, polyester resins, urethane resins, polyolefin resins, vinyl alkyl ether resins, polyamide resins, fluorine resins, etc. In addition to adhesive components (mainly polymers) such as ethylene-diene copolymers, there are crosslinking agents, adhesive-imparting agents, oxidation inhibitors, plasticizers, fillers, antistatic agents, and light It is composed of an adhesive composition of components such as polymerization initiators and flame retardants. In addition, the adhesive component system also broadly includes the concept of polymers that express adhesiveness through the addition of plasticizing components, etc., although the polymer itself does not have adhesiveness substantially.

The first and second adhesive layers 22 and 32 are as described above, even if they are formed from an energy ray-curable adhesive, even if they are formed from a non-energy ray-curable adhesive that does not harden even if the energy ray adhesive is irradiated. It's also possible. In addition, the energy rays are electromagnetic waves or charged particle rays that have energy quantum, which means active light such as ultraviolet rays or electron rays, etc. However, in this manufacturing method, it is preferable to use ultraviolet rays. In addition, even if only one of the first and second adhesive layers 22 and 32 is formed of an energy ray-type curable adhesive, both of them may be formed of an energy ray-type curable adhesive.

The energy-ray-curable adhesive is specifically composed of an energy-ray-curable adhesive containing a component having a photopolymerizable unsaturated group. Although it is not particularly limited as an energy-ray curable adhesive, it can be mentioned that the main polymer (for example, acrylic polymer) itself (for example, the side chain of the main polymer) of the adhesive is introduced into a double bond, etc. Photopolymerizable unsaturated base.

Furthermore, as an energy-ray-curable adhesive, even if it is different from the main polymer (for example, a propionic acid-based polymer), the blending has photopolymerization and unsaturation. Energy ray polymerizable compound based on the base can also be used. In this case, the main polymer may be one that introduces a photopolymerizable unsaturated group, or it may not be introduced.

Although the thickness of the first adhesive layer 22 is appropriately adjusted according to the bump height, it is preferably 5 to 500 μm, and more preferably 10 to 100 μm. Furthermore, the thickness of the second adhesive layer 32 is preferably 5 to 500 μm, more preferably 10 to 100 μm. In addition, the first and second adhesive layers 22 and 32 may be formed of the same material, or may be formed of different materials.

(middle layer)

The intermediate layer used in the first and second support sheets 23 and 33 is preferably formed by curing a curable material containing urethane (meth)acrylate. Since the curable material contains urethane (meth)acrylate, the stress acting on the first and second support sheets 23 and 33 can be relieved. Therefore, in each process, the vibration etc. which generate|occur|produce in the 1st and 2nd support piece 23, 33 can be absorbed.

In addition to the urethane (meth)acrylate, the above-mentioned curable material may contain monomer components such as acrylic monomers. As the acrylic monomer, alicyclic compounds such as isobornyl (meth)acrylate and dicyclopentenyl (meth)acrylic acid are preferably preferred. In addition, the above-mentioned curable material is preferably hardened by energy rays. In addition, when the curable material is cured by energy rays, it is preferable to contain a photopolymerization initiator.

In the case where any one of the first and second support sheets 23, 33 has an intermediate layer, even if the materials used are the same, even if they are not The same is also possible. The thickness of the intermediate layer is, for example, 5 to 1000 μm, preferably 10 to 500 μm.

According to the manufacturing method of the first embodiment described above, the thermosetting resin layer 25 is laminated on the surface 10A of the semiconductor wafer 10 so as to cover the bump necks, and is laminated thereon In this state, it is cured and becomes the protective film 25A. Therefore, the bump diameter can be appropriately protected by the protective film 25A.

Moreover, when the first support sheet 23 is heated, the adhesion of the first support sheet 23 to the thermosetting resin layer 25 becomes heavier, and it may not be possible to remove the first support sheet 23 from the thermosetting resin layer 25 (protective film 25A). ) In case of poor peeling. In this embodiment, prior to thermal curing (process (III), the support sheet 23 is peeled from the thermosetting resin layer 25 (process (II)) to prevent such a peeling failure.

[Second Implementation Type]

Next, the second embodiment of the present invention will be described. In addition, in the description of the following embodiments, descriptions of the same processes and components as those of the first embodiment are omitted.

In the first embodiment, although the process (III) is followed by cutting (process (IV)), in the second embodiment, the process (III) is performed after the process (IV). That is, in the second implementation type, the steps (I), (II), (IV), and (III) are sequentially implemented. Hereinafter, regarding the second embodiment, the differences from the first embodiment will be described.

In this embodiment, first of all, it is similar to the first embodiment. Similarly, in the steps (I) and (II), the first protective film forming film 20 is bonded to the surface 10A of the semiconductor wafer 10, and then the first support sheet 23 is peeled from the thermosetting resin layer 25.

Next, 10 semiconductor wafers are sliced into semiconductor wafers 15 by dicing (process (IV)), and then the thermosetting resin layer 25 is heated and cured (process (III)). Therefore, in the process (IV) of this embodiment, the semiconductor wafer 10 and the thermosetting resin layer 25 before thermosetting are simultaneously diced to form individual pieces.

Although the heating conditions for the curing of the thermosetting resin layer 25 are the same as those in the first embodiment, the curing of the thermosetting resin layer 25 is preferably performed after pickup, especially by heating during reflow. Hardening is better.

When the thermosetting resin layer 25 is cured after pickup, the semiconductor wafer 15 (semiconductor wafer 10) has been removed from the first and second support sheets 23, 33 (especially, the second support sheet 33) during heating. Peel off. Therefore, by the heating of the process (IV), the adhesive force of the support sheets 23 and 33 will become heavier and there will be no peeling failure. Moreover, when the thermosetting resin layer 25 is cured by heating during reflow, there is no need to provide a heating process for curing the thermosetting resin layer 25, so the process can be simplified.

[The third implementation type]

Hereinafter, regarding the third embodiment of the present invention, the differences from the first embodiment will be described.

The manufacturing process of the third implementation type is in addition to the above-mentioned first implementation type In addition to the described projects (I) to (IV), there are also projects (A-1), (A-2) and (A-3).

(A-1) The process of laminating the second protective film forming layer on the back of the semiconductor wafer

(A-2) The process of heating the second protective film forming layer to form the second protective film

(A-3) The process of further laminating a second support sheet on top of the second protective film formed on the back surface of the semiconductor wafer

[Engineering (A-1)]

In this embodiment, similar to the first embodiment, after the steps (I), (II), and (III) are implemented (that is, after the protective film 25A is formed on the surface 10A of the semiconductor wafer 10), As shown in FIG. 7, the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer (the surface opposite to the bump surface). The second protective film forming layer 35 contains at least a thermosetting resin, and becomes the second protective film 35A by being heated as described later (see FIG. 8).

In this process, it is sufficient if the thin film formed by the second protective film forming layer 35 is pasted on the back surface 10B of the semiconductor wafer 10, but even if it will be provided on one of the supporting substrates (not shown), for example The second protective film forming layer 35 on the surface of the semiconductor wafer may be pasted on the back surface 10B of the semiconductor wafer 10. In addition, the supporting base material is peeled and removed from the second protective film forming layer 35 after the second protective film forming layer 35 is attached to the back surface of the semiconductor wafer 10. In addition, as the supporting substrate, the same resin film as the first and second substrates 21 and 31 can be used.

The second protective film forming layer 35 is the same as the thermosetting resin layer 25, and is preferably composed of a thermosetting resin composition containing a thermoplastic resin and a filler, except for the thermosetting resin. Furthermore, the thermosetting resin composition may further contain other additives such as coloring agents such as curing accelerators, coupling agents, pigments, and dyes. In addition, since the details of each material and blending amount used in the second protective film forming layer 35 are the same as those of the thermosetting resin layer 25 described in the first embodiment, the description thereof will be omitted. The second protective film forming layer 35 may be formed of the same material as the thermosetting resin layer 25, or may be formed of a different material.

Furthermore, the thickness of the second protective film forming layer 35 is, for example, 5 to 500 μm, preferably 10 to 100 μm.

[Engineering (A-2)]

After the process (A-1), the second protective film forming layer 35 is heated and hardened to form the second protective film 35A (process (A-2)). The heating of the second protective film forming layer 35 is, for example, by placing the semiconductor wafer 10 with the protective film 25A formed on the surface 10A side and the second protective film forming layer 35 stacked on the back 10B side in a heating furnace, etc. Internally, heating is better. In addition, since the heating conditions in this process (A-2) are the same as the heating conditions described in the process (III), the description thereof is omitted.

[Engineering (A-3)]

After the process (A-2), as shown in FIG. 8, on the back side of the semiconductor wafer 10, which is the second protective film 35A, a second support sheet is attached 33. In addition, the structure of the second support sheet 33 is the same as that of the first embodiment. That is, although in FIG. 8, the second support sheet 33 is attached to the second protective film 35A via the second adhesive layer 32, even if the second adhesive layer is omitted, the second base material 31 may be directly attached to the second protective film 35A, even if the second base material 31 is surface-treated, or a layer other than the adhesive layer is provided, and the layer or the surface treatment surface is interposed to be stuck to the second protective film 35A It's also possible. In addition, an intermediate layer may be further provided between the second adhesive layer 32 and the second base material 31.

[Engineering (IV)]

Next, as shown in FIG. 8, the semiconductor wafer 10 on which the protective film 25A and the second protective film 35A are formed is diced and sliced into a plurality of semiconductor wafers 15. In the process (IV) of this embodiment, the protective film 25A and the second protective film 35A are also cut at the same time as the semiconductor wafer 10 and divided according to the shape of the semiconductor wafer 15. Since the details of the cutting process are the same as those of the first embodiment, the description is omitted.

After the dicing process, as in the first embodiment, the semiconductor chip 15 is picked up and mounted on the chip mounting substrate or the like by reflow, and then the space between the semiconductor chip 15 and the chip mounting substrate 40 is sealed by, for example, a sealing resin Required processes such as gaps and other necessary processes to manufacture semiconductor devices.

Even in the above third embodiment, it is the same as the first embodiment, and the bump neck is appropriately protected by the protective film 25A. Furthermore, the second protective film 35A can also protect the back surface of the semiconductor chip 15.

In addition, in the third embodiment described above, it is possible to perform laser printing on the second protective film 35A or the second protective film forming layer 35 formed on the back surface of the wafer. By performing laser printing, various marks, characters, etc. can be displayed on the back side of the semiconductor chip 15. In this embodiment, the hardened second protective film 35A is exposed between the process (A-2) and the process (A-3). Therefore, it is preferable to perform laser printing on the second protective film 35A exposed between the process (A-2) and the process (A-3). By printing the hardened second protective film 35A, the printability is better than that in the case where the second protective film forming layer 35 is printed before hardening. Furthermore, since the semiconductor wafer 10 is printed before being sliced into pieces, it is possible to perform batch printing on a plurality of semiconductor wafers. Furthermore, by performing laser printing on the exposed second protective film 35A, printing can be performed efficiently. However, even if the second protective film 35A or the second protective film-forming layer 35 which is not exposed (that is, covered by the second support sheet 33) is irradiated with a laser through the second support sheet 33, it is performed Laser printing is also possible.

In the above-mentioned third embodiment, although it shows that the works (A-1), (A-2) and (A-3) are carried out in order, even if this is replaced, the works are carried out in order (A-1) , (A-3) and (A-2) are also acceptable.

Specifically, first, as described above, the steps (I), (II), and (III) are performed to form the protective film 25A on the surface 10A, and then the second protective film forming layer 35 is bonded to the semiconductor wafer 10 Back 10B (Engineering (A-1)). Next, on the second protective film forming layer 35 before hardening laminated on the back surface 10B, the second support sheet 33 is further bonded (process (A-3)).

Furthermore, the second protective film forming layer 35 is cured by heating to form After the second protective film 35A (process (A-2)), the semiconductor wafer 10 supported on the second support sheet 33 is sliced by dicing (process (IV)), and a semiconductor device is manufactured.

In addition, when (A-1), (A-3), and (A-2) are sequentially performed, after the second protective film 35A is formed by curing, it is covered by the second supporting sheet 33 until the cutting is completed. Will not show up. Therefore, laser printing on the cured second protective film 35A is usually performed by irradiating the laser through the second supporting sheet 33.

Furthermore, when (A-1), (A-3) and (A-2) are performed in this order, the second support sheet 33 is pasted on the second protective film forming layer 35 in the process (A-2). The state is heated. Therefore, the second support sheet 33 preferably has heat resistance. That is, as the second base material 31 of the second support sheet 33, a base material that does not melt or shrinks significantly by the heating of the process (A-2) is preferable.

Furthermore, the second support sheet 33 having heat resistance is one that does not increase the adhesiveness with respect to the adherend by the heating of the process (A-2). Specifically, for the second support sheet 33 having heat resistance, the adhesive force after heating in the process (A-2) is preferably less than 10N/25mm. Furthermore, the adhesive force is preferably 0.3~9.8N/25mm, and more preferably 0.5~9.5N/25mm.

The second support sheet 33 has a relatively low adhesive force after being heated in this manner, and it is difficult to produce a peeling defect that the semiconductor wafer 15 cannot pick up when the semiconductor wafer 15 is picked up from the second support sheet 33.

In addition, the above-mentioned adhesive force after heating means that when the adhesive layer is formed with an energy ray-curable adhesive, it is consistent with the manufacturing In the same time sequence as the method, the adhesive is irradiated with energy rays to harden it and the adhesive layer is heated. That is, in the implemented manufacturing method, after heating in the process (A-2), in the case of irradiating energy rays, after heating, the adhesive layer is irradiated with energy rays and the adhesive force is measured. In addition, in the implemented manufacturing method, before heating in the process (A-2), in the case of irradiating energy rays, before heating, the adhesive layer is irradiated with energy rays and the adhesive force is measured.

In addition, the adhesive force was measured after heating the adherend to which the second support sheet with a width of 25 mm and a length of 150 mm was adhered under the same conditions as the heating in the process (A-2). The specific adhesive force measurement was performed by peeling the second support sheet from the adherend under the conditions of a temperature of 23°C and a humidity of 50%RH, a peeling angle of 180°, and a peeling speed of 300mm/min.

Here, as the body to be adhered, a second protective film forming layer adhered to SUS304 was used. The second protective film forming layer is cured by heating under the same conditions as the above process (A-2), and becomes the second protective film when the second support sheet is peeled off.

As the second support sheet 33 having heat resistance, it is provided with a second base material 31 and a second adhesive layer 32, and the second adhesive layer 32 is made of, for example, an energy-ray curable acrylic adhesive or a water dispersion system. Acrylic adhesives are preferred. By using these adhesives, it is possible to raise the second support sheet 31 which is difficult to raise the adhesive force even after heating.

Moreover, when the process is carried out in the order of (A-1), (A-3) and (A-2), the heating and curing of the second protective film forming layer 35 (process (A-2)) does not require cutting It can be done before, even after cutting.

Specifically, the process (I), (II), (III), (A-1), (A-3) is carried out in order, and then, the process (A-2) is not carried out, and the cutting is carried out (process (IV)) ). Therefore, in this case, the dicing is performed on the semiconductor wafer 10 on which the cured protective film 25A is formed on the surface 10A, and the second protective film forming layer 35 before being cured is laminated on the back surface 10B. Then, after the division, the second protective film forming layer 35 is heated and hardened to form the second protective film 35A (process (A-2)).

In this case, the heating and hardening of the second protective film forming layer 35 is preferably carried out after picking up, and it is especially preferable to carry out heating during reflow.

When the second protective film forming layer 35 is cured after pickup, the semiconductor wafer 15 (semiconductor wafer 10) has already been peeled from the second support sheet 33 during heating. Therefore, even if the second support sheet 33 does not have heat resistance as described above, the adhesive force of the second support sheet 33 will not become heavier due to the heating in the process (A-2), resulting in poor peeling. Moreover, when the second protective film forming layer 35 is cured by heating during reflow, there is no need to separately provide a process for curing the second protective film forming layer 35, so the process can be simplified.

[Fourth Implementation Type]

Hereinafter, regarding the fourth embodiment of the present invention, the differences from the third embodiment will be described.

In the third embodiment described above, the timing of heating and curing the thermosetting resin layer 25 and the second protective film forming layer 35 are different from each other, but in this embodiment, these are heated at the same time. Make it hard 化. That is, in the third embodiment described above, the process (III) and the process (A-2) are performed at different timings. For this reason, in this embodiment, the process (III) and the process (A- 2) The whole batch is carried out at the same time sequence.

Specifically, in this embodiment, after the steps (I) and (II) are carried out (that is, the first protective film forming film 20 is pasted on the semiconductor wafer 10), then the thermosetting resin layer 25 After the first support sheet 23 is peeled off), the process (A-1) is performed without the process (III), and the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10.

After that, as shown in FIG. 9, by heating the semiconductor wafer 10 on which the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both sides, the thermosetting resin layer 25 and The second protective film forming layer 35 is hardened to form the protective film 25A and the second protective film 35A (process (III) and process (A-2)). In addition, the heating system is performed by arranging the semiconductor wafer 10 with the layers 25 and 35 laminated on both sides in a heating furnace, for example. Since the heating method and heating conditions are the same as the process (III) described in the first embodiment described above, the description thereof will be omitted.

After that, as in the third embodiment, in the process (A-3), the second support sheet 33 is attached to the upper surface of the second protective film 35A, and then the process (IV) is cut. In the process (IV) of this embodiment, the semiconductor wafer 10 on which the cured protective film 25A and the second protective film 35A are formed on both sides is diced. After dicing, even in this embodiment, the semiconductor device is manufactured in the same manner as in the above embodiments.

Even in the above fourth embodiment, it is the same as the above third embodiment, and the bump neck can be appropriately protected by the protective film 25A. At the same time, the second protective film 35A also protects the back surface of the semiconductor chip 15. Furthermore, in this embodiment, since the thermosetting resin layer 25 and the second protective forming layer 35 are heated at the same time to harden them, the process can be simplified.

Furthermore, although the thermosetting resin layer 25 and the second protective film forming layer 35 are heat-shrinked by being heated, the semiconductor wafer 10 may warp due to the force caused by the heat-shrinkage. However, in this embodiment, when the thermosetting resin layer 25 and the second protective film forming layer 35 are heat-cured in a batch, the force due to the heat shrinkage generated during curing is offset. Therefore, in this embodiment, it is possible to reduce the warpage of the wafer that is generated when the surface protective film resin layer 25 or the second protective film forming layer 35 is thermally cured.

[Fifth Implementation Type]

Moreover, in the case of batches of engineering (III) and engineering (A-2) in the same sequence, the sequence of implementing engineering (III) and engineering (A-2) is the same as that of the above-mentioned fourth embodiment, even without cutting (Process (IV)) can be used before, even after cutting (process (IV)). Hereinafter, the fifth embodiment will be used to explain its aspect.

In this embodiment, similar to the first embodiment, after the steps (I) and (II) are implemented (that is, after the first protective film forming film 20 is attached to the semiconductor wafer, the thermosetting resin After the layer 25 peels off the first support sheet 23), the process (A-1) is performed without the process (III), and the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10. And, after that, as in the fourth embodiment, on the back side of the semiconductor wafer 10 (That is, the upper surface of the second protective film forming layer 35) is attached to the second support sheet 33 (process (A-3), and then cut (process (IV)). In the process (IV) of this embodiment type In this, the semiconductor wafer 10 on which the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both sides is diced.

After dicing (process (IV)), in this embodiment, the thermosetting resin layer 25 and the second protective film are formed on both sides of the semiconductor wafer 15 (semiconductor wafer after slicing) The layer 35 is heated at the same time to harden these to form the protective film 25A and the second protective film 35A (processes (III) and (A-2)). Here, the heat hardening (processes (III) and (A-2)) of this embodiment is the same as that of the second embodiment, and it is better to perform it after picking up, especially hardening by heating during reflow. good.

As described above, even in this embodiment, the bump neck and the back surface of the semiconductor chip 15 can be protected appropriately. Furthermore, similar to the fourth embodiment, by simultaneously curing the thermosetting resin layer 25 and the second protective film forming layer 35, the process can be simplified and the warpage generated in the semiconductor wafer (semiconductor wafer) can be reduced at the same time. .

[The sixth form of implementation]

Next, regarding the sixth embodiment of the present invention, the differences from the first embodiment will be described.

In addition to the processes (I) to (IV) described in the above-mentioned first embodiment, the manufacturing process of the sixth embodiment also includes processes (B-1) and (B-2).

(B-1) The second protective film forming film provided with the second supporting sheet and the second protective film forming layer provided on the second supporting sheet is used to make the second protective film The process in which the protective film forming layer becomes the bonding surface and is bonded to the backside of the semiconductor wafer

(B-2) The process of heating the second protective film forming layer to form the second protective film

That is, in the third to fifth embodiments described above, although the second protective film forming layer and the second support sheet are attached to the back side of the semiconductor wafer, respectively, in this embodiment, These are used as a second protective film forming film to be attached to the back side of the semiconductor wafer in bulk.

[Engineering (B-1)]

In this embodiment, similar to the first embodiment, after the steps (I), (II), and (III) are implemented (that is, after the protective film 25A is formed on the semiconductor wafer 10), the semiconductor wafer The round back surface 10B (the surface on the opposite side to the bump surface) is bonded to the second protective film forming film 30 as shown in FIG. 11. As shown in FIG. 10, the second protective film forming film 30 includes a second supporting sheet 33, and a second protective film forming layer 35 provided on the second supporting sheet 33, and the second protective film forming layer 35 is pasted Joined on the back side 10B of the semiconductor wafer 10.

Here, as a specific example of the second support sheet 33, as shown in FIGS. 10 and 11, a second substrate 31 and a second substrate 31 formed on the surface of one of the second substrate 31 can be cited. The adhesive layer 32 and the second protective film forming layer 35 are formed on the second adhesive layer 32, but it may have another structure as described in the first embodiment. Furthermore, the second supporting sheet 33 is as described in the first embodiment, for example, FIGS. 10 and 11 As shown, it is formed to be a circle larger than the second protective film forming layer 35 so that the outer peripheral area can be attached to the supporting member 13 such as an annular plate.

However, the size of the second support sheet 33 may be the same as that of the second protective film forming layer 35. When the size of the second support sheet 33 is the same as that of the second protective film forming layer 35, if any one of the second protective film forming layer 35 and the second support sheet 33 is formed a circle larger than the semiconductor wafer 10, An adhesive member such as a double-sided tape for attaching to the supporting member 13 may be provided on the outer peripheral area of the second protective film forming layer 35 attached to the semiconductor wafer 10.

[Engineering (B-2)]

In this embodiment, after the process (B-1), the second protective film forming layer 35 is heated and hardened to form the second protective film 35A (process (B-2)). The second protective film forming layer 35 is heated, for example, by placing the semiconductor wafer 10 with the protective film 25A formed on the surface 10A side and the second protective film forming layer 35 stacked on the back surface 10B side in a heating furnace, etc. Internally, heating is better. In addition, since the heating conditions in this process (B-2) are the same as the heating conditions described in the process (III) of the first embodiment, the description thereof is omitted.

Next, the semiconductor wafer 10 in which the protective film 25A and the second protective film 35A are formed on both surfaces is diced (process (IV)). After dicing, the semiconductor wafer 15 is picked up, and a semiconductor device is manufactured in the same manner as in the above-mentioned embodiments.

In addition, in the present embodiment, when the second protective film forming layer 35 is heated and cured, the second support sheet 33 is stuck to the second The protective film forms a layer 35. Therefore, in order to prevent the adhesive force of the second support sheet 33 from becoming heavier during the heating of the process (B-2), it is preferable that the second support sheet 33 has heat resistance. Since the second support sheet 33 having heat resistance is the same as described above, its description is omitted.

Even in the above sixth embodiment, the bump neck can be appropriately protected by the protective film 25A, and the back surface of the semiconductor wafer 10 (semiconductor wafer 15) can be protected by the second protective film 35A. Furthermore, in this embodiment, the second protective film forming layer 35 and the second supporting sheet 33 are attached to the back surface of the semiconductor wafer 10 as a whole batch of the second protective film forming film 30, so that the process can be simplified.

In the sixth embodiment described above, although the process (B-2) is performed before the cutting (process (IV)), the process (B-2) does not have to be performed before the cutting, and it may be performed even after the cutting.

Specifically, after the steps (I), (II), (III), and (B-1) are carried out in sequence, the cutting is carried out (the project (IV), and then the project (B-2) is carried out. Therefore, the cutting system is right The semiconductor wafer 10 is formed by forming the protective film 25A on the surface 10A, and laminating the second protective film forming film 30 (that is, the second protective film forming layer 35 and the second support sheet 33) on the back surface 10B.

Furthermore, although the process is after cutting, in the process (B-2), the second protective film forming layer 35 is heated and cured, but as explained in the second embodiment, it is heated and cured to proceed after picking up. Good behavior, especially for hardening by heating during reflow.

[7th Implementation Type]

Next, regarding the seventh embodiment of the present invention, the differences from the sixth embodiment will be described.

In the sixth embodiment described above, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated and cured at different timings, but in the seventh embodiment, these are heated at the same time. And harden it. That is, in the sixth embodiment described above, the process (III) and the process (B-2) are performed at different timings, while in this embodiment, the process (III) and the process (B-2) are ) Is carried out in batches at the same time sequence.

That is, in this embodiment, after the projects (I) and (II) are implemented, the project (III) is not carried out, and the project (B-1) is carried out. Thus, in this embodiment, as shown in FIG. 12, the thermosetting resin layer 25 is laminated on the surface 10A of the semiconductor wafer 10, and the second protective film forming film 30 is laminated on the back surface 10B. That is, the second protective film forming layer 35 and the second supporting sheet 33).

Next, by heating the semiconductor wafer 10 on which the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both sides, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated. It hardens to form the protective film 25A and the second protective film 35A (process (III) and process (B-2)). At this time, the semiconductor wafer 10 is supported by the second supporting sheet 33 pasted on the second protective film 35A.

After heat curing, the semiconductor wafer 10 on the second support sheet 33 is sliced into a protective film 25A and a second protective film 35A by dicing, and a semiconductor wafer with a protective film 25A and a second protective film 35A formed on both sides is obtained 15 (Engineering (IV)). After that, pick up the semiconductor wafer 15, and The semiconductor devices are manufactured in the same manner in each embodiment.

In addition, in this embodiment, since the second protective film forming layer 35 is heated and hardened in a state where the second support sheet 33 is stuck on the second protective film forming layer 35, the second support sheet 33 is used. It is better to have heat resistance. The details of the second support sheet having heat resistance are as described above.

Even in the above seventh embodiment, the bump neck and the back surface 10B of the semiconductor wafer 10 (semiconductor wafer 15) can be protected, and the process can be simplified by using the second protective film forming film 30. Furthermore, since the thermosetting resin layer 25 and the second protective film forming layer 35 are heated at the same time to harden them, the process can be simplified and the semiconductor wafer (semiconductor wafer) can be prevented from being warped.

[Eighth Implementation Type]

Next, regarding the eighth embodiment, the differences from the seventh embodiment will be described.

In the seventh embodiment described above, although the thermosetting resin layer 25 and the second protective film forming layer 35 are heated and cured before the cutting (process (IV)) (process (III) and process (B-2)) , But these do not have to be done before cutting, even after cutting. The following eighth implementation mode is used to illustrate its state.

In this embodiment, similar to the seventh embodiment, after the steps (I), (II), and (B-1) are carried out in sequence, the semiconductor wafer 10 is cut and sliced into semiconductor wafers 15 (process (IV) )). Here, the cutting system is to laminate the thermosetting resin layer 25 on the surface 10A, and laminate the second protective layer on the back surface 10B. The semiconductor wafer 10 of the protective film formation layer 35 is performed. At this time, the semiconductor wafer 10 is supported by the second support sheet 33 pasted on the second protective film forming layer 35A.

After dicing, the thermosetting resin layer 25 and the second protective film forming layer 35 on each semiconductor wafer 15 are heated in batches to harden them (processes (III) and (B-2)). In this case, the heat curing of the thermosetting resin layer 25 and the second protective film forming layer 35 is as described above, preferably after picking up, especially by heating during reflow. .

Even in the above eighth embodiment, it is the same as the seventh embodiment. The bump neck and the back surface 10B of the semiconductor wafer 10 (semiconductor wafer 15) can be protected appropriately, and the process can be simplified, and it can also prevent Warpage in semiconductor wafers (semiconductor wafers). Furthermore, the second support sheet does not need to have heat resistance.

In addition, in each of the above embodiments, although the process (II) where the first support sheet 23 is peeled off indicates the aspect that is carried out immediately after the process (I), if it is before the process (III), in any The stage can be carried out. For example, in the fourth embodiment, although it means that the projects (I), (II), (A-1) are carried out in order, and then the whole batch of projects (III) and (A-2) are carried out, but Even if the projects (I), (A-1) and (II) are carried out in sequence, then the whole batch of projects (III) and (A-2) can be carried out. The same applies to the fifth embodiment.

Moreover, in the seventh embodiment, although it means that the projects (I), (II), (B-1) are carried out in order, and then the whole batch of projects (III) and (B-2) are carried out, but even if Carry out works (I), (B-1) and (II), and then carry out works (III) and works (B-2) in a batch. The same applies to the eighth embodiment.

Furthermore, in the above-mentioned second to eighth embodiments, although there is no special mention for the backside grinding of semiconductor wafers, in the case of backside grinding of semiconductor wafers, if it is the same as the first embodiment , It can be implemented between project (I) and project (II). However, when the second protective film forming layer 35 is stuck to the back surface 10B of the semiconductor wafer 10, the back grinding is performed before the second protective film forming layer 35 is stuck.

In addition, even in the fourth to eighth embodiments, the second protective film 35A or the second protective film forming layer 35 may be laser printed. In addition, in the fourth embodiment, between the process (III) and the process (A-2), and the process (A-3), the hardened second protective film 35A is exposed. Therefore, in the fourth embodiment, it is better to perform laser printing on the exposed second protective film 35A between steps (III) and (A-2) and steps (A-3).

10: Semiconductor wafer

10A: Surface

10B: Back

11: bump

20: Film for forming the first protective film

21: The first substrate

22: The first adhesive layer

23: The first support piece

25: Thermosetting resin layer

Claims (7)

A method of manufacturing a semiconductor device, comprising: The first protective film forming film provided with the first support sheet and the thermosetting resin layer in this order is bonded to the semiconductor wafer provided with bumps using the thermosetting resin layer as the bonding surface The surface engineering; The process of peeling the first support sheet from the thermosetting resin layer; The process of cutting the above-mentioned semiconductor wafer simultaneously with the thermosetting resin layer; and The process of hardening the above-mentioned thermosetting resin layer by heating during reflow to form a protective film. The method of manufacturing a semiconductor device as described in claim 1, wherein Further equipped with: The process of attaching the second protective film forming layer to the back of the semiconductor wafer; The process of heating the above-mentioned second protective film forming layer to form a second protective film; and A process of further laminating a second support sheet on the second protective film forming layer on the back surface of the semiconductor wafer, or on the upper surface of the second protective film. The method of manufacturing a semiconductor device as described in claim 1, wherein Further equipped with: A second protective film forming film provided with a second support sheet and a second protective film forming layer provided on the second support sheet is attached so that the second protective film forming layer becomes a bonding surface The engineering of the backside of the aforementioned semiconductor wafer; and The process of heating the second protective film forming layer to form the second protective film Cheng. The method of manufacturing a semiconductor device described in any one of claims 1 to 3, wherein The semiconductor wafer, which is cut into pieces by the above-mentioned dicing, is arranged on the chip-mounting substrate so that its surface side faces the chip-mounting substrate, and is fixed to the above-mentioned chip-mounting substrate by reflow Use the substrate. The method of manufacturing a semiconductor device described in any one of claims 1 to 3, wherein The above-mentioned thermosetting resin layer and the above-mentioned second protective film forming layer are simultaneously heated by reflow, so that these layers are thermally hardened. The method of manufacturing a semiconductor device described in any one of claims 1 to 3, wherein The first support sheet includes a first substrate and a first adhesive layer provided on a surface of one of the first substrates, and the thermosetting resin layer is provided on the first adhesive layer, ^{The melt viscosity of the thermosetting resin layer was 1×10 2} Pa at the temperature when the first protective film formation film was bonded to the semiconductor wafer. 2×10 ⁴ Pa above S. S is not full, ^{The shear modulus of the first adhesive layer is 1×10 3} Pa or more and 2×10 ⁶ Pa or less at the temperature when the first protective film forming film is bonded to the semiconductor wafer. The method of manufacturing a semiconductor device described in any one of claims 1 to 3, wherein The thermosetting resin layer has a thickness of 0.01 to 0.99 times the height of the bump.

Images