JPWO2017077958A1 - Manufacturing method of semiconductor device - Google Patents

Abstract

In the method for manufacturing a semiconductor device of the present invention, (I) a first protective film in which a first support sheet 23 and a thermosetting resin layer 25 are provided in this order on the surface of a semiconductor wafer 10 on which bumps 11 are provided. A step of bonding the forming film 20 with the thermosetting resin layer 25 as a bonding surface; (II) a step of peeling the first support sheet 23 from the thermosetting resin layer 25; and (III) thermosetting. A step of heating and curing the curable resin layer 25 to form a protective film, and (IV) a step of dicing the semiconductor wafer 10 together with the thermosetting resin layer or the protective film.

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device using a semiconductor chip in which at least a bump surface is protected by a protective film.

Conventionally, a semiconductor device using a mounting method called a face-down method has been manufactured. In the face-down method, electrode portions called bumps are formed on the surface of a semiconductor chip, and the semiconductor chip is mounted on the substrate so that the chip surface faces the substrate or the like.
A semiconductor wafer or a semiconductor chip used in the face-down method may be provided with a resin layer having various functions on a wafer surface provided with bumps for various purposes. Further, when a semiconductor wafer is ground on the back surface, a back grind sheet is generally attached to protect the surface of the wafer. Therefore, conventionally, a laminated sheet in which a back grind sheet and various resin layers are laminated and integrated may be used.

  In Patent Document 1, as such a laminated sheet, a thermosetting resin layer that is in contact with the circuit surface, and a flexible thermoplastic resin layer that is directly laminated on this layer, and a thermoplastic resin layer are laminated. Furthermore, what was laminated | stacked and provided with the outermost layer comprised with a resin film etc. is disclosed. This laminated sheet is affixed to the semiconductor wafer surface during back grinding to protect the semiconductor wafer. In addition, after the back surface grinding, the thermoplastic resin layer and the outermost layer are peeled off from the thermosetting resin layer, while the thermosetting resin layer remaining on the semiconductor wafer has the semiconductor chip mounted on the substrate. It is cured later and used as a sealing resin.

JP 2005-28734 A

  By the way, the bumps provided on the wafer surface are likely to be damaged due to stress concentration on the bump neck which is a connecting portion between the semiconductor wafer and the bump. In Patent Document 1, a thermosetting resin layer is provided on a bump surface of a semiconductor chip. This resin layer only seals a gap between the semiconductor chip and the substrate, and such a sealing resin is used. It is not guaranteed that damage to the bump neck can be avoided.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device manufacturing method capable of preventing breakage at a bump neck in a semiconductor wafer with bumps.

As a result of intensive studies, the present inventors have laminated the thermosetting resin layer on the surface (bump surface) of the semiconductor wafer provided with the bumps by a predetermined process and thermally cured the bump neck. The inventors found that the film can be sufficiently protected by being embedded in the protective film, and completed the following present invention. The present invention provides the following (1) to (8).
(1) (I) A first protective film-forming film in which a first support sheet and a thermosetting resin layer are provided in this order on the surface of a semiconductor wafer on which bumps are provided, the thermosetting resin layer And a process of bonding to the bonding surface,
(II) peeling the first support sheet from the thermosetting resin layer;
(III) heating and curing the thermosetting resin layer to form a protective film;
(IV) a step of dicing the semiconductor wafer together with a thermosetting resin layer or a protective film;
A method for manufacturing a semiconductor device comprising:
(2) (A-1) bonding the second protective film forming layer to the back surface of the semiconductor wafer;
(A-2) heating the second protective film forming layer to form a second protective film; and (A-3) the second protective film forming layer on the back surface of the semiconductor wafer, or a second protective film. The method for manufacturing a semiconductor device according to (1), further including a step of bonding a second support sheet on the film.
(3) (B-1) A second protective film-forming film comprising a second support sheet and a second protective film-forming layer provided on the second support sheet; Bonding and bonding to the back surface of the semiconductor wafer; and
(B-2) The method for manufacturing a semiconductor device according to (1), further including: a step of heating the second protective film forming layer to form a second protective film.
(4) The method for manufacturing a semiconductor device according to (2) or (3), wherein the thermosetting resin layer and the second protective film forming layer are simultaneously heated to thermally cure them.
(5) The semiconductor wafer separated into pieces by the dicing is disposed on the chip mounting substrate so that the surface side faces the chip mounting substrate, and fixed to the chip mounting substrate by reflow. (1) The manufacturing method of the semiconductor device of any one of (4).
(6) The method for manufacturing a semiconductor device according to (5), wherein at least the second protective film forming layer is cured by heating in the reflow.
(7) The first support sheet includes a first base material and a first pressure-sensitive adhesive layer provided on one surface of the first base material, and the thermosetting is performed on the first pressure-sensitive adhesive layer. A functional resin layer is provided,
The melt viscosity of the thermosetting resin layer is 1 × 10 ² Pa · S or more and less than 2 × 10 ⁴ Pa · S at a temperature when the first protective film-forming film is bonded to the semiconductor wafer,
The shear modulus of the first pressure-sensitive adhesive layer is 1 × 10 ³ Pa or more and 2 × 10 ⁶ Pa or less at the temperature when the first protective film-forming film is bonded to the semiconductor wafer (1) The manufacturing method of the semiconductor device of any one of-(6).
(8) The method for manufacturing a semiconductor device according to any one of (1) to (7), wherein the thermosetting resin layer has a thickness of 0.01 to 0.99 times a bump height.

  In the present invention, damage to the bump neck is prevented by embedding the bump neck with the protective film formed on the bump surface of the semiconductor wafer.

It is typical sectional drawing which shows the semiconductor wafer in which the bump was formed in the surface. It is typical sectional drawing which shows the film for 1st protective film formation. It is typical sectional drawing which shows a mode that the film for 1st protective film formation was stuck to the semiconductor wafer. It is typical sectional drawing which shows the process of heating the semiconductor wafer in which the thermosetting resin layer was laminated | stacked on the surface. It is a typical sectional view showing a semiconductor wafer at the time of dicing. It is typical sectional drawing which shows a mode when the separated semiconductor chip is mounted in the board | substrate for chip mounting. It is typical sectional drawing which shows the semiconductor wafer by which the protective film was formed in the surface and the 2nd protective film formation layer was laminated | stacked on the back surface. It is a schematic diagram which shows the process of dicing the semiconductor wafer in which the protective film and the 2nd protective film were formed in each surface and the back surface. It is a schematic diagram which shows the process of heating the semiconductor wafer in which the thermosetting resin layer and the 2nd protective film formation layer were provided in the surface and the back surface, respectively. It is typical sectional drawing which shows the film for 2nd protective film formation. It is typical sectional drawing which shows the semiconductor wafer by which the protective film was formed in the surface and the film for 2nd protective film formation was bonded together in the back surface. It is a schematic diagram which shows the process of heating the semiconductor wafer in which the thermosetting resin layer and the film for 2nd protective film formation were provided in the surface and the back surface, respectively.

Hereinafter, the present invention will be specifically described using embodiments.
(First embodiment)
As shown in FIG. 1, the semiconductor wafer 10 used in this manufacturing method is a bumped wafer in which bumps 11 are provided on the surface 10A. A plurality of bumps 11 are usually provided. The semiconductor wafer 10 is not particularly limited, but may be a silicon wafer or a ceramic, glass, or sapphire wafer. The thickness of the semiconductor wafer 10 is not particularly limited, but is preferably 0.625 to 0.825 mm. The material of the bump 11 is not particularly limited, and various metal materials are used, and preferably solder is used. Further, the shape of the bump 11 is not particularly limited, and may be a round shape as shown in FIG. 1, but may be any other shape. The height of the bump 11 is not particularly limited, but is usually 5 to 1000 μm, preferably 50 to 500 μm.

The manufacturing method of the semiconductor device according to the first embodiment of the present invention includes at least the following steps.
(I) The first protective sheet-forming film in which the first support sheet and the thermosetting resin layer are provided in this order on the surface of the semiconductor wafer provided with the bumps, and the thermosetting resin layer are bonded to each other. The process of pasting together,
(II) a step of peeling the first support sheet from the thermosetting resin layer,
(III) heating and curing the thermosetting resin layer to form a protective film;
(IV) Process of dicing a semiconductor wafer together with a protective film

Hereinafter, the manufacturing method of this embodiment is demonstrated in detail for every process.
[Step (I)]
In step (I), first, as shown in FIG. 2, a first protective film-forming film 20 including a first support sheet 23 and a thermosetting resin layer 25 provided on the first support sheet 23. Prepare. Then, as shown in FIG. 3, the first protective film forming film 20 is bonded to the surface (bump surface) 10 </ b> A of the semiconductor wafer 10 with the thermosetting resin layer 25 as the bonding surface.
Here, in the first protective film forming film 20, the first support sheet 23 is provided on the first base 21 and one surface of the first base 21 as shown in FIGS. 1 adhesive layer 22 and the thermosetting resin layer 25 may be affixed on the first adhesive layer 22, but the first adhesive layer 22 is omitted and one of the base materials 21 is provided. The thermosetting resin layer 25 may be directly attached to the surface. Moreover, one surface of the 1st base material 21 is surface-treated, or layers other than an adhesive layer are provided in the 1st support sheet 23, and the thermosetting resin layer 25 is provided through the layer or surface treatment surface. It may be affixed. Furthermore, an intermediate layer may be provided between the first pressure-sensitive adhesive layer 22 and the first base material 21.

Further, a release material (not shown) may be further stuck on the thermosetting resin layer 25 of the first protective film forming film 20. The release material protects the thermosetting resin layer 25 until the first protective film forming film 20 is used. The release material is peeled off and removed from the first protective film forming film 20 before the first protective film forming film 20 is attached to the semiconductor wafer 10.
Although the 1st adhesive layer 22 is formed from various adhesives, even if it is formed with the energy-beam curable adhesive which hardens | cures by irradiating an energy ray and the adhesive force with respect to a to-be-adhered body falls. Good.

The bonding of the first protective film forming film 20 to the semiconductor wafer 10 is preferably performed at a bonding temperature of 30 to 150 ° C, and more preferably 40 to 100 ° C.
The first protective film forming film 20 is preferably applied while being pressed, for example, while being pressed by a pressing means such as a pressure roller. Alternatively, the first protective film forming film 20 may be pressure-bonded to the semiconductor wafer 10 by a vacuum laminator.

When the first protective film forming film 20 is affixed to the semiconductor wafer 10, as shown in FIG. 3, the bumps 11 penetrate the thermosetting resin layer 25 and protrude toward the first support sheet 23. Protruding the bumps 11 toward the first support sheet 23 in this manner makes it easy to fix the bumps 11 in contact with electrodes or the like on the chip mounting substrate by reflow described later.
However, the bump 11 may be in a state of being embedded in the thermosetting resin layer 25 without protruding toward the first support sheet 23 side. Even in such a state, the bump 11 may be protruded by causing the thermosetting resin layer 25 to flow by heating in the step (III) or the like.

The first support sheet 23 includes a first base material 21 and a first pressure-sensitive adhesive layer 22 provided on one surface of the first base material 21, and a thermosetting resin on the first pressure-sensitive adhesive layer 22. When the layer 25 is provided, the melt viscosity of the thermosetting resin layer 25 is 1 × 10 ² Pa · S at a temperature (bonding temperature) when the first protective film forming film 20 is bonded to the semiconductor wafer 10. It is preferably less than 2 × 10 ⁴ Pa · S and the shear modulus of the first pressure-sensitive adhesive layer 22 is preferably 1 × 10 ³ Pa or more and 2 × 10 ⁶ Pa or less at the bonding temperature. In addition, the melt viscosity of the thermosetting resin layer 25 is 1 × 10 ³ Pa · S or more and less than 1 × 10 ⁴ Pa · S, and the shear modulus of the first pressure-sensitive adhesive layer 22 is 1 × 10 ⁴ Pa or more and 5 It is more preferable that it is 10 ⁵ Pa or less.
By setting the shear elastic modulus of the first pressure-sensitive adhesive layer 22 and the melt viscosity of the thermosetting resin layer 25 within the above range at the bonding temperature, the bump neck that is the base portion of the bump 11 is formed as the thermosetting resin layer. 25, the tip of the bump 11 can be easily protruded from the thermosetting resin layer 25.
The melt viscosity of the thermosetting resin layer 25 can be adjusted, for example, by changing the amount of each material in the thermosetting resin composition described later and the type of each material. The shear modulus of the first pressure-sensitive adhesive layer 22 can be adjusted by changing the type of pressure-sensitive adhesive. Furthermore, when the first pressure-sensitive adhesive layer 22 is formed of an energy ray-curable pressure-sensitive adhesive, before the first support sheet 23 is attached to the semiconductor wafer 10, the first pressure-sensitive adhesive layer 22 is irradiated with energy rays to be partially or It is also possible to adjust the shear modulus by completely curing.

The melt viscosity of the thermosetting resin layer is a value measured by a parallel plate method using a rheometer (manufactured by HAAKE, RS-1). More specifically, it is a value when measurement is performed in the range of room temperature to 250 ° C. under the conditions of a gap of 100 μm, a rotation cone diameter of 20 mm, and a rotation speed of 10 s ⁻¹ .
The shear modulus of the pressure-sensitive adhesive layer is measured using a shear modulus measurement apparatus (ARES, manufactured by Rheometric Co., Ltd.) with a pressure-sensitive adhesive layer having a thickness of 0.2 mm. Specifically, the shear modulus was measured under the conditions of a frequency of 1 Hz, a plate diameter of 7.9 mmφ, and a strain of 1%, with the temperature being the same as the bonding temperature. Further, when the pressure-sensitive adhesive layer is cured by energy rays at the time of bonding, the pressure-sensitive adhesive layer is cured under the same conditions and the shear elastic modulus is measured.

The thermosetting resin layer 25 preferably has a thickness of 0.01 to 0.99 times the height of the bump 11 (bump height). By setting the thickness of the thermosetting resin layer 25 to 0.01 times or more of the bump height, the bump neck is embedded in the protective film, and breakage of the bump neck is easily prevented. Moreover, it becomes easy to make the front-end | tip of a bump protrude from the thermosetting resin layer 25 by setting it as 0.99 times or less. From these viewpoints, it is more preferable that the thermosetting resin layer 25 has a thickness of 0.1 to 0.9 times the bump height.
In addition, although the thickness of the thermosetting resin layer 25 is not specifically limited, Usually, it is 5-500 micrometers, Preferably it is 10-100 micrometers.

[Step (II)]
In step (II), after the step (I), the first support sheet 23 attached to the surface of the semiconductor wafer 10 is peeled from the thermosetting resin layer 25. After this peeling, the thermosetting resin layer 25 remains on the semiconductor wafer 10 as shown in FIG.
When the first pressure-sensitive adhesive layer 22 is formed of an energy ray-curable pressure-sensitive adhesive, the first pressure-sensitive adhesive layer 22 is irradiated with energy rays before the first support sheet 23 is peeled from the semiconductor wafer 10 in the step (II). Then, the first pressure-sensitive adhesive layer 22 is cured. The first pressure-sensitive adhesive layer 22 is easily peeled at the interface with the thermosetting resin layer 25 because the adhesive strength is reduced by being cured by energy ray irradiation.
The timing of irradiating the first pressure-sensitive adhesive layer 22 with energy rays and curing is not particularly limited, and the first support sheet 23 may be cured in advance before being attached to the semiconductor wafer 10. Further, it may be after being attached to the semiconductor wafer 10. In addition, for example, before the first support sheet 23 is attached to the semiconductor wafer 10, the first pressure-sensitive adhesive layer 22 is applied to the semiconductor wafer 10 while irradiating energy rays to such an extent that the first support sheet 23 is not completely cured. Then, the adhesive force may be further reduced by further irradiating with energy rays and further curing.

[Step (III)]
After peeling off the first support sheet 23 in the step (II), the thermosetting resin layer 25 laminated on the surface of the semiconductor wafer 10 is heated. As shown in FIG. 4, this heating is preferably performed by placing and heating the semiconductor wafer 10 on which the thermosetting resin layer 25 is laminated, for example, inside a heating furnace or the like. Since the thermosetting resin layer 25 contains a thermosetting resin, the thermosetting resin layer 25 is thermoset by the above-described heating to form a protective film 25A (see FIG. 5).
The heating conditions are not particularly limited as long as the thermosetting resin contained in the thermosetting resin layer 25 is cured. For example, the heating conditions are 80 to 200 ° C, 30 to 300 minutes, preferably 100 to 180 ° C. It is performed for 60 to 200 minutes.

[Step (IV)]
Next, as shown in FIG. 5, the semiconductor wafer 10 on which the protective film 25 </ b> A is formed on the bump surface is divided by dicing and divided into a plurality of semiconductor chips 15. In this step, along with the semiconductor wafer 10, the protective film 25 </ b> A is also divided according to the shape of the semiconductor chip 15.
Although it does not specifically limit as a dicing method, Well-known methods, such as blade dicing, stealth dicing, and laser dicing, can be used, for example, by providing cut 17 so that protection film 25A and semiconductor wafer 10 may be penetrated. Is what you do.
For example, as shown in FIG. 5, the dicing is performed by attaching a second support sheet 33 to the back surface 10 </ b> B side of the semiconductor wafer 10 to support the semiconductor wafer 10 and making a notch 17 from the front surface 10 </ b> A side of the semiconductor wafer 10. To do.

In the configuration of FIG. 5, the second support sheet 33 includes a second base material 31 and a second pressure-sensitive adhesive layer 32 provided on one surface of the second base material 31. It is affixed to the semiconductor wafer 10 through the agent layer 32. However, in the second support sheet 33, the second pressure-sensitive adhesive layer 32 may be omitted, or the surface of the second base material 31 that is bonded to the semiconductor wafer 10 is surface-treated, or the pressure-sensitive adhesive layer. Instead of this, a layer other than the pressure-sensitive adhesive layer may be provided and bonded to the back side of the semiconductor wafer 10 via the layer or the surface-treated surface. Further, an intermediate layer (not shown) may be provided between the second pressure-sensitive adhesive layer 32 and the second base material 31.
The second support sheet 33 may be slightly larger than the semiconductor wafer 10, and its central region may be attached to the semiconductor wafer 10, and its outer peripheral region may be attached to the support member 13 without being attached to the semiconductor wafer 10. preferable. The support member 13 is a member for supporting the second support sheet 33 at the time of dicing or the like, and examples thereof include a ring frame.
Note that the second support sheet 33 is not necessarily attached to the support member 13 by directly attaching the second pressure-sensitive adhesive layer 32, and a re-peeling adhesive layer or the like is provided in the outer peripheral region of the second support sheet 33. You may stick by a re-peeling adhesive layer.

Although the 2nd adhesive layer 32 is formed from various adhesives, you may be formed with the energy-beam curable adhesive. When formed with an energy ray curable pressure sensitive adhesive, energy rays are preliminarily applied to at least a region (center region) bonded to the back surface side of the semiconductor wafer 10 of the second pressure sensitive adhesive layer 32 before pick-up described later. Is applied to cure the second pressure-sensitive adhesive layer 32 and reduce the adhesive force to the back surface of the semiconductor wafer 10. The timing of irradiating the energy beam is not particularly limited, but may be performed before being bonded to the semiconductor wafer 10 or may be performed after dicing and before pickup.
On the other hand, the peripheral region may not be irradiated with energy rays, and may be maintained with a high adhesive force for the purpose of bonding to the support member 13.

In the present embodiment, after dicing, the semiconductor chip 15 is picked up and attached to the chip mounting substrate or the like by reflow, and then the gap between the semiconductor chip 15 and the chip mounting substrate is sealed with a sealing resin. A semiconductor device is manufactured through necessary steps.
Here, the method of picking up is not particularly limited. For example, the semiconductor chip 15 is pushed up from the back surface side with a pin or the like through the second support sheet 33, and the semiconductor chip 15 is peeled off from the second support sheet 33 to form a vacuum collet. There is a method of picking up by such as.

The picked-up semiconductor chip 15 is attached to a chip mounting substrate or the like by the following method, for example.
That is, as shown in FIG. 6, the semiconductor chip 15 is disposed at a predetermined position on the chip mounting substrate 40 such that the surface (that is, the bump surface) faces the chip mounting substrate 40. Then, by reflow, the bumps 11 are fixed to the chip mounting substrate 40, and the semiconductor chip 15 and the chip mounting substrate 40 are electrically connected. In the reflow, for example, a conductive material (not shown) such as solder provided on the substrate 40 is melted, and the bumps 11 are fused to the electrodes of the chip mounting substrate 40 by the conductive material.
The reflow is performed, for example, by placing the chip mounting substrate 40 and the semiconductor chip 15 disposed on the substrate 40 inside the heating furnace and heating them. The heating in the reflow is performed, for example, in an atmosphere of 120 to 300 ° C. for 0.5 to 5 minutes, preferably in an atmosphere of 160 to 260 ° C. for 1 to 2 minutes.

In the manufacturing method of the present embodiment, the semiconductor wafer 10 is preferably subjected to back grinding. The back surface grinding is performed in a state where the first support sheet 23 is attached to the front surface 10 </ b> A side of the semiconductor wafer 10. That is, the back grinding of the semiconductor wafer is performed between the step (I) and the step (II). Thereby, the 1st support sheet 23 is used not only as a sheet | seat for supporting the thermosetting resin layer 25 but as a back grind sheet which protects a bump surface at the time of back surface grinding.
The backside grinding of the semiconductor wafer is performed, for example, by fixing the front surface side of the semiconductor wafer 10 to which the first support sheet 23 is attached on a fixed table such as a chuck table and grinding the backside 10B with a grinder or the like. The thickness of the wafer 10 after grinding is not particularly limited, but is usually 5 to 450 μm, preferably about 20 to 400 μm.

Next, the material of each member used by this manufacturing method is demonstrated in detail.
(Thermosetting resin layer)
The thermosetting resin layer 25 includes at least a thermosetting resin and can be bonded to the wafer 10. The thermosetting resin layer 25 becomes a protective film 25 </ b> A by being heated in a heat curing step described later.
Examples of the thermosetting resin used for the thermosetting resin layer 25 include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, it is also possible to contain a hardening | curing agent as a thermosetting resin, for example, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.
In the thermosetting resin layer 25, the thermosetting resin is preferably 5 to 70% by mass, more preferably 10 to 10%, based on the total amount of the thermosetting resin layer (that is, the thermosetting resin composition). 50% by mass.

Moreover, it is preferable that the thermosetting resin layer 25 is comprised from the thermosetting resin composition containing a thermoplastic resin and a filler other than a thermosetting resin.
As the thermoplastic resin, an acrylic resin, a polyester resin, a urethane resin, an acrylic urethane resin, a silicone resin, a rubber polymer, a phenoxy resin, or the like can be used. Among these, an acrylic resin is preferable.
The thermoplastic resin in the thermosetting resin layer is preferably 1 to 50% by mass, more preferably 5 to 40% by mass with respect to the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).

In addition, as the filler, inorganic powders selected from powders such as silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride, spheroidized beads, single crystal fibers and glass fibers, etc. A filler is mentioned, In these, a silica filler or an alumina filler is preferable.
The filler in the thermosetting resin layer is preferably 5 to 75 mass%, more preferably 10 to 60 mass%, based on the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).

Moreover, the thermosetting resin composition may contain other additives, such as coloring agents, such as a hardening accelerator, a coupling agent, a pigment, and dye other than said component, respectively.
The curing accelerator is not particularly limited, and for example, at least one selected from amine-based curing accelerators, phosphorus-based curing accelerators, imidazole-based curing accelerators, boron-based curing accelerators, phosphorus-boron-based curing accelerators, and the like. Seeds can be used. A silane coupling agent can be used as the coupling agent.

(First and second base materials)
The first substrate 21 is not particularly limited, but it is preferable to use a resin film. The second substrate 31 is not particularly limited, but it is preferable to use a resin film. The resin film may be a single layer film made of one kind of resin film, or may be a multilayer film in which a plurality of resin films are laminated.
Specific examples of the resin film include polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-norbornene copolymer films, polyolefin films such as norbornene resin films; ethylene-vinyl acetate copolymer films. , Ethylene-based copolymer films such as ethylene- (meth) acrylic acid copolymer film and ethylene- (meth) acrylic acid ester copolymer film; polyvinyl chloride such as polyvinyl chloride film and vinyl chloride copolymer film Film: Polyester film such as polyethylene terephthalate film and polybutylene terephthalate film; polyurethane film, polyimide film, polyamide film, polyaceta Le-based films, polycarbonate-based film, polystyrene film, fluororesin film, modified polyphenylene oxide-based film, polyphenylene sulfide film, polysulfone-based films. Further, modified films such as these crosslinked films and ionomer films are also used.
The first and second base materials 21 and 31 may be the same type as each other or different types. The first and second base materials 21 and 31 transmit energy rays when the pressure-sensitive adhesive constituting the first and second pressure-sensitive adhesive layers 22 and 23 is an energy ray-type curable pressure-sensitive adhesive, respectively. It is preferable that
The thickness of each of the first and second base materials 21 and 31 is, for example, 10 to 1000 μm, preferably 50 to 200 μm.

(First and second adhesive layers)
Although the adhesive which forms each of the 1st and 2nd adhesive layers 22 and 32 is not specifically limited, an acrylic adhesive, a rubber adhesive, a silicone adhesive, a polyester adhesive, a urethane adhesive, a polyolefin -Based pressure-sensitive adhesives, vinyl alkyl ether-based pressure-sensitive adhesives, polyamide-based pressure-sensitive adhesives, fluorine-based pressure-sensitive adhesives, styrene-diene block copolymer-based pressure-sensitive adhesives, and the like. Among these, acrylic pressure-sensitive adhesives are preferable. For example, when an acrylic pressure-sensitive adhesive is used for the first pressure-sensitive adhesive layer 22, the shear elastic modulus of the pressure-sensitive adhesive layer is easily set in the above-described range.
Adhesive is usually acrylic resin, rubber component, silicone resin, polyester resin, urethane resin, polyolefin resin, vinyl alkyl ether resin, polyamide resin, fluorine resin, styrene-diene block copolymer In addition to adhesive components (main polymer), etc., if necessary, contains components such as cross-linking agents, tackifiers, antioxidants, plasticizers, fillers, antistatic agents, photopolymerization initiators, and flame retardants It consists of an adhesive composition. The term “adhesive component” is a concept that includes a polymer that does not substantially have adhesiveness, but also includes a polymer that exhibits adhesiveness by the addition of a plasticizing component.

As described above, the first and second pressure-sensitive adhesive layers 22 and 32 may be formed from an energy ray-curable pressure-sensitive adhesive, or a non-energy ray-curable pressure-sensitive adhesive that does not cure the pressure-sensitive adhesive even when irradiated with energy rays. It may be formed from an agent. The energy rays have energy quanta in electromagnetic waves or charged particle rays, and indicate active light such as ultraviolet rays or electron rays. In this production method, it is preferable to use ultraviolet rays. Note that only one of the first and second pressure-sensitive adhesive layers 22 and 32 may be formed from the energy-ray-type curable pressure-sensitive adhesive, or both may be formed from the energy-ray-type curable pressure-sensitive adhesive.
Specifically, the energy ray curable pressure sensitive adhesive is composed of an energy ray curable pressure sensitive adhesive containing a component having a photopolymerizable unsaturated group. The energy ray-curable pressure-sensitive adhesive is not particularly limited, but is a photopolymerizable unsaturated group such as a double bond in the main polymer (for example, acrylic polymer) of the pressure-sensitive adhesive itself (for example, in the side chain of the main polymer). Is introduced.
Further, as the energy ray-curable pressure-sensitive adhesive, an energy ray-polymerizable compound having a photopolymerizable unsaturated group may be blended separately from the main polymer (for example, acrylic polymer). In this case, the main polymer may or may not have a photopolymerizable unsaturated group introduced therein.

  Although the thickness of the 1st adhesive layer 22 is suitably adjusted according to bump height, Preferably it is 5-500 micrometers, More preferably, it is 10-100 micrometers. Moreover, the thickness of the 2nd adhesive layer 32 becomes like this. Preferably it is 5-500 micrometers, More preferably, it is 10-100 micrometers. In addition, although the 1st and 2nd adhesive layers 22 and 32 may be formed from the same material, they may be formed from a mutually different material.

(Middle layer)
The intermediate layer used in the first and second support sheets 23 and 33 is preferably formed by curing a curable material containing urethane (meth) acrylate. When the curable material contains urethane (meth) acrylate, the stress acting on the first and second support sheets 23 and 33 can be relaxed. Therefore, in each process, it is possible to absorb vibrations and the like generated in the first and second support sheets 23 and 33.
The curable material may contain a monomer component such as an acrylic monomer in addition to urethane (meth) acrylate. As the acrylic monomer, alicyclic compounds such as isobornyl (meth) acrylate and dicyclopentenyl (meth) acrylate are preferable. The curable material is preferably cured with energy rays. In addition, when curable material is hardened | cured with an energy ray, it is preferable to contain a photoinitiator.
When each of the first and second support sheets 23 and 33 has an intermediate layer, the materials used for these may be the same or different. The thickness of the intermediate layer is, for example, 5 to 1000 μm, preferably 10 to 500 μm.

According to the manufacturing method of the first embodiment described above, the thermosetting resin layer 25 is laminated on the surface 10A of the semiconductor wafer 10 so as to cover the bump neck, and is cured in the laminated state. The protective film 25A is formed. Therefore, the bump neck can be appropriately protected by the protective film 25A.
Further, when the first support sheet 23 is heated, the adhesive force of the first support sheet 23 to the thermosetting resin layer 25 increases, and the first support sheet 23 is removed from the thermosetting resin layer 25 (protective film 25A). There may be a peeling failure that prevents peeling. In the present embodiment, such peeling failure is prevented by peeling the support sheet 23 from the thermosetting resin layer 25 (step (II)) before thermosetting (step (III)).

<Second Embodiment>
Next, a second embodiment of the present invention will be described. In the following description of each embodiment, descriptions of the same steps and members as those in the first embodiment are omitted.
In the first embodiment, dicing (step (IV)) is performed after step (III). In the second embodiment, step (III) is performed after dicing (step (IV)). That is, in 2nd Embodiment, it implements in order of process (I), (II), (IV), and (III). Hereinafter, the difference between the second embodiment and the first embodiment will be described.

In this embodiment, first, similarly to the first embodiment, in steps (I) and (II), the first protective film-forming film 20 is bonded to the surface 10A of the semiconductor wafer 10, and then the first support is performed. The sheet 23 is peeled from the thermosetting resin layer 25.
Next, the semiconductor wafer 10 is divided into semiconductor chips 15 by dicing (step (IV)), and then the thermosetting resin layer 25 is heated and cured (step (III)). Therefore, in the step (IV) of the present embodiment, the semiconductor wafer 10 is diced together with the thermosetting resin layer 25 before thermosetting to be singulated.

The heating conditions for curing the thermosetting resin layer 25 may be the same as those in the first embodiment, but the curing of the thermosetting resin layer 25 is preferably performed after picking up, particularly during reflow. It is preferable to cure by heating.
When the thermosetting resin layer 25 is cured after the pickup, the semiconductor chip 15 (semiconductor wafer 10) is already peeled off from the first and second support sheets 23 and 33 (particularly the second support sheet 33) during heating. Will be. Therefore, the adhesive force of the support sheets 23 and 33 does not increase due to the heating in the step (IV), and the peeling failure does not occur. Furthermore, when the thermosetting resin layer 25 is cured by heating at the time of reflow, it is not necessary to separately provide a heating process for curing the thermosetting resin layer 25, so that the process can be simplified.

<Third Embodiment>
Next, a difference between the third embodiment of the present invention and the first embodiment will be described.
In addition to the steps (I) to (IV) described in the first embodiment, the manufacturing steps of the third embodiment include steps (A-1), (A-2) and (A-3). Have
(A-1) A step of bonding the second protective film forming layer to the back surface of the semiconductor wafer (A-2) A step of heating the second protective film forming layer to form a second protective film (A-3) Semiconductor A step of further bonding a second support sheet on the second protective film formed on the back surface of the wafer

[Process (A-1)]
In the present embodiment, as in the first embodiment, after performing steps (I), (II), and (III) (that is, after forming the protective film 25A on the surface 10A of the semiconductor wafer 10), As shown in FIG. 7, a second protective film forming layer 35 is bonded to the back surface 10B (surface opposite to the bump surface) of the semiconductor wafer. The second protective film forming layer 35 includes at least a thermosetting resin, and becomes the second protective film 35A (see FIG. 8) when heated, as will be described later.
In this step, a film-like material composed of the second protective film forming layer 35 may be attached to the back surface 10B of the semiconductor wafer 10, for example, provided on one surface of a support substrate (not shown). The obtained second protective film forming layer 35 may be attached to the back surface 10 </ b> B of the semiconductor wafer 10. The support base material is peeled off from the second protective film forming layer 35 after the second protective film forming layer 35 is pasted on the back surface of the semiconductor wafer 10. In addition, as a support base material, the same resin film as the 1st and 2nd base materials 21 and 31 can be used.

Similarly to the thermosetting resin layer 25, the second protective film forming layer 35 is preferably composed of a thermosetting resin composition containing a thermoplastic resin and a filler in addition to the thermosetting resin. Moreover, the thermosetting resin composition may further contain other additives such as a color accelerator such as a curing accelerator, a coupling agent, a pigment, and a dye. Note that details of each material and blending amount used for the second protective film forming layer 35 are the same as those of the thermosetting resin layer 25 described in the first embodiment, and thus description thereof is omitted. The second protective film forming layer 35 may be formed of the same material as the thermosetting resin layer 25, but may be formed of a different material.
Moreover, the thickness of the 2nd protective film formation layer 35 is 5-500 micrometers, for example, Preferably it is 10-100 micrometers.

[Process (A-2)]
After the step (A-1), the second protective film forming layer 35 is heated and cured to form the second protective film 35A (step (A-2)). The heating of the second protective film forming layer 35 is performed, for example, by placing the semiconductor wafer 10 in which the protective film 25A is formed on the front surface 10A side and the second protective film forming layer 35 is laminated on the back surface 10B side in a heating furnace or the like. It is preferable to carry out by arranging and heating. In addition, since the heating conditions in this process (A-2) are the same conditions as the heating conditions demonstrated by process (III), the description is abbreviate | omitted.

[Process (A-3)]
After the step (A-2), as shown in FIG. 8, the second support sheet 33 is bonded to the back surface side of the semiconductor wafer 10, that is, on the second protective film 35A. In addition, the structure of the 2nd support sheet 33 is the same as that of 1st Embodiment. That is, in FIG. 8, although the 2nd support sheet 33 shows the aspect affixed on the 2nd protective film 35A via the 2nd adhesive layer 32, a 2nd adhesive layer is abbreviate | omitted and the 2nd base material 31 is shown. May be directly adhered to the second protective film 35A, or the second base material 31 is subjected to a surface treatment, or a layer other than the pressure-sensitive adhesive layer is provided, and the second protective film is provided via the layer or the surface-treated surface. It may be affixed to 35A. Further, an intermediate layer may be further provided between the second pressure-sensitive adhesive layer 32 and the second base material 31.

[Step (IV)]
Next, the semiconductor wafer 10 on which the protective film 25A and the second protective film 35A are formed is diced and separated into a plurality of semiconductor chips 15 as shown in FIG. In step (IV) of the present embodiment, the protective film 25 </ b> A and the second protective film 35 </ b> A are diced together with the semiconductor wafer 10 and divided according to the shape of the semiconductor chip 15. The details of the dicing process are the same as those in the first embodiment, and a description thereof will be omitted.

After the dicing step, as in the first embodiment, the semiconductor chip 15 is picked up and attached to the chip mounting substrate or the like by reflow, and then, for example, a gap between the semiconductor chip 15 and the chip mounting substrate 40 is sealed. A semiconductor device is manufactured through a necessary process such as sealing with a stop resin.
Also in the third embodiment described above, the bump neck is appropriately protected by the protective film 25A as in the first embodiment. In addition, the back surface of the semiconductor chip 15 can be protected by the second protective film 35A.

  In the third embodiment described above, laser printing may be performed on the second protective film 35A or the second protective film forming layer 35 formed on the back surface of the wafer. By performing laser printing, various marks, characters, and the like can be displayed on the back side of the semiconductor chip 15. In the present embodiment, the cured second protective film 35A is exposed between the step (A-2) and the step (A-3). Therefore, it is preferable to perform laser printing on the second protective film 35A exposed between the step (A-2) and the step (A-3). By printing on the cured second protective film 35A, the printability is better than when printing on the second protective film forming layer 35 before curing. In addition, since printing is performed before the semiconductor wafer 10 is separated into pieces, batch printing can be performed on a plurality of semiconductor chips. Furthermore, efficient printing is possible by performing laser printing on the exposed second protective film 35A. However, laser printing is performed by irradiating the second protective film 35A or the second protective film forming layer 35 that is not exposed (that is, covered by the second support sheet 33) via the second support sheet 33. May be performed.

In the said 3rd Embodiment, although the aspect which performs process (A-1), (A-2), and (A-3) in this order was shown, process (A-1), (A-3) was shown instead. ) And (A-2) in this order.
Specifically, first, similarly to the above, the steps (I), (II), and (III) are performed to form the protective film 25A on the surface 10A, and then the second protective film forming layer 35 is formed on the semiconductor. Bonding to the back surface 10B of the wafer 10 (step (A-1)). Next, the second support sheet 33 is further bonded onto the second protective film forming layer 35 before curing laminated on the back surface 10B (step (A-3)).
Then, the second protective film forming layer 35 is cured by heating to form a second protective film 35A (step (A-2)), and then the semiconductor wafer 10 supported by the second support sheet 33 is diced. The semiconductor device is manufactured by dividing into individual pieces (step (IV)).
In addition, when performing in order of (A-1), (A-3), and (A-2), the second protective film 35A is formed on the second support sheet 33 until dicing is completed after being formed by curing. It is not covered and exposed. Therefore, laser printing performed on the cured second protective film 35 </ b> A is usually performed by irradiating a laser through the second support sheet 33.

Furthermore, if it carries out in order of (A-1), (A-3), and (A-2), the 2nd support sheet 33 will be affixed on the 2nd protective film formation layer 35 in a process (A-2). In this state, heating is performed. Therefore, the second support sheet 33 preferably has heat resistance. That is, the second substrate 31 of the second support sheet 33 is preferably a substrate that does not melt or remarkably shrink due to the heating in the step (A-2).
In addition, the heat-resistant second support sheet 33 does not have high adhesion to the adherend due to the heating in the step (A-2). Specifically, the second support sheet 33 having heat resistance is preferably such that the adhesive strength after heating in the step (A-2) is less than 10 N / 25 mm. Moreover, this adhesive force is more preferably 0.3 to 9.8 N / 25 mm, and further preferably 0.5 to 9.5 N / 25 mm.
Since the second support sheet 33 has a relatively low adhesive force after heating as described above, when the semiconductor chip 15 is picked up from the second support sheet 33, it is difficult to cause a peeling failure that the semiconductor chip 15 cannot pick up.

In addition, the adhesive force after the heating means that, when the pressure-sensitive adhesive layer is formed of an energy ray-curable pressure-sensitive adhesive, it is cured by irradiating the pressure-sensitive adhesive with energy rays at the same timing as the manufacturing method to be carried out. And the adhesive strength when the pressure-sensitive adhesive layer is heated. That is, when the energy ray is irradiated after the heating in the step (A-2) in the production method to be carried out, the value is obtained when the adhesive force is measured by irradiating the pressure-sensitive adhesive layer after the heating. On the other hand, when irradiating energy rays before heating in step (A-2) in the production method to be carried out, the value when the adhesive force is measured by irradiating the adhesive layer with energy rays before heating It is.
The adhesive strength was measured after heating the adherend to which the second support sheet having a width of 25 mm and a length of 150 mm was attached under the same conditions as the heating in the step (A-2). A specific measurement of the adhesive force is performed by peeling the second support sheet from the adherend at a peeling angle of 180 ° and a peeling speed of 300 mm / min under the conditions of a temperature of 23 ° C. and a humidity of 50% RH.
Here, as the adherend, a second protective film forming layer adhered to SUS304 is used. The second protective film forming layer is cured by heating under the same conditions as in the above step (A-2), and becomes the second protective film when the second support sheet is peeled off.

  As the 2nd support sheet 33 which has heat resistance, the 2nd base material 31 and the 2nd adhesive layer 32 are provided, and the 2nd adhesive layer 32 is an energy-beam curable acrylic type, for example. It is preferably formed from a pressure-sensitive adhesive or a water-dispersed acrylic pressure-sensitive adhesive. By using these pressure-sensitive adhesives, it is possible to provide the second support sheet 31 in which the adhesive force is hardly improved even after heating.

Further, when the processes are performed in the order of (A-1), (A-3) and (A-2), the second protective film forming layer 35 is heated and cured (process (A-2)) by dicing. It is not necessary to carry out before dicing, and it may be carried out after dicing.
Specifically, the steps (I), (II), (III), (A-1), (A-3) are performed in this order, and then the dicing ( Step (IV)) is performed. Therefore, in this case, the dicing is performed on the semiconductor wafer 10 in which the protective film 25A cured on the front surface 10A is formed and the second protective film forming layer 35 before curing is laminated on the back surface 10B. Then, after dicing, the second protective film forming layer 35 is heated and cured to form a second protective film 35A (step (A-2)).
In this case, the heat curing of the second protective film forming layer 35 is preferably performed after picking up, and particularly preferably performed by heating during reflow.
When the second protective film forming layer 35 is cured after the pickup, the semiconductor chip 15 (semiconductor wafer 10) is already peeled off from the second support sheet 33 during heating. Therefore, even if the second support sheet 33 does not have heat resistance as described above, the adhesive force of the second support sheet 33 becomes heavy due to the heating in the step (A-2), and a peeling failure may occur. There is nothing. Furthermore, when the second protective film forming layer 35 is cured by heating at the time of reflow, it is not necessary to separately provide a process for curing the second protective film forming layer 35, so that the process can be simplified.

<Fourth Embodiment>
Next, a difference between the fourth embodiment of the present invention and the third embodiment will be described.
In the third embodiment, the timing for heating and curing the thermosetting resin layer 25 and the second protective film forming layer 35 is different, but in the present embodiment, these are simultaneously heated and cured. To do. That is, in the third embodiment, the process (III) and the process (A-2) are performed at different timings, whereas in the present embodiment, the process (III) and the process (A-2) are performed. Will be performed at the same time.

Specifically, in this embodiment, after the steps (I) and (II) are performed (that is, the first protective film-forming film 20 is attached to the semiconductor wafer 10, and then the first support sheet 23 is heated. After peeling from the curable resin layer 25, the step (A-1) is performed without performing the step (III), and the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10.
Then, as shown in FIG. 9, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated by heating the semiconductor wafer 10 in which the uncured thermosetting resin layer 25 and the second protective film forming layer 35 are laminated on both surfaces. 2 Protective film forming layer 35 is cured to form protective film 25A and second protective film 35A (step (III) and step (A-2)). The heating is performed, for example, by placing the semiconductor wafer 10 in which the layers 25 and 35 are laminated on both surfaces inside the heating furnace. Since the heating method and the heating conditions are the same as in step (III) described in the first embodiment, the description thereof is omitted.
Thereafter, similarly to the third embodiment, in the step (A-3), the second support sheet 33 is bonded onto the second protective film 35A, and then dicing is performed in the step (IV). In the step (IV) of the present embodiment, the semiconductor wafer 10 having the cured protective film 25A and the second protective film 35A formed on both surfaces is diced. After dicing, the semiconductor device is manufactured in the present embodiment as in the above embodiments.

In the fourth embodiment as well, as in the third embodiment, the bump neck can be appropriately protected by the protective film 25A, and the back surface of the semiconductor chip 15 can be protected by the second protective film 35A. become. Moreover, in this embodiment, since the thermosetting resin layer 25 and the 2nd protective film formation layer 35 are heated and hardened simultaneously, it is possible to simplify a process.
Furthermore, although the thermosetting resin layer 25 and the second protective film forming layer 35 are thermally contracted by being heated, the semiconductor wafer 10 may be warped due to the force due to the thermal contraction. However, in the present embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 are collectively heat-cured, so that the force due to thermal shrinkage generated during curing is offset. Therefore, in the present embodiment, the warpage of the wafer that occurs when the surface protective film resin layer 25 and the second protective film forming layer 35 are thermally cured can be reduced.

<Fifth Embodiment>
Further, when the step (III) and the step (A-2) are performed at the same time, the timing of performing the step (III) and the step (A-2) is as in the fourth embodiment. It may not be before dicing (step (IV)), and may be after dicing (step (IV)). Hereinafter, the aspect is demonstrated using 5th Embodiment.

  In the present embodiment, as in the first embodiment, after the steps (I) and (II) are performed (that is, after the first protective film-forming film 20 is attached to the semiconductor wafer, the first support sheet 23 is added). After peeling from the thermosetting resin layer 25), the step (A-1) is performed without performing the step (III), and the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10. Then, similarly to the fourth embodiment, the second support sheet 33 is bonded to the back surface side of the semiconductor wafer 10 (that is, on the second protective film forming layer 35) (step (A-3)). Then, dicing (step (IV)) is performed. In the step (IV) of the present embodiment, the semiconductor wafer 10 in which the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both surfaces is diced.

  After dicing (process (IV)), in this embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 laminated on both surfaces of the semiconductor chip 15 (separated semiconductor wafer) are simultaneously heated, These are cured to form the protective film 25A and the second protective film 35A (steps (III) and (A-2)). Here, the heat curing (steps (III) and (A-2)) of the present embodiment is preferably performed after picking up, as in the second embodiment, and is particularly cured by heating during reflow. It is preferable.

  As described above, also in this embodiment, the bump neck and the back surface of the semiconductor chip 15 can be appropriately protected. Further, similarly to the fourth embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 are simultaneously cured, thereby simplifying the process and warping occurring in the semiconductor wafer (semiconductor chip). Can also be reduced.

<Sixth Embodiment>
Next, a difference between the sixth embodiment of the present invention and the first embodiment will be described.
The manufacturing process of the sixth embodiment includes the following processes (B-1) and (B-2) in addition to the processes (I) to (IV) described in the first embodiment.
(B-1) A second protective film-forming film comprising a second support sheet and a second protective film-forming layer provided on the second support sheet, with the second protective film-forming layer as a bonding surface (B-2) Step of forming the second protective film by heating the second protective film forming layer In other words, in the third to fifth embodiments, the second protective film is bonded to the back surface of the semiconductor wafer. In the embodiment, the forming layer and the second support sheet are separately attached to the back surface side of the semiconductor wafer. However, in the present embodiment, these layers are collectively used as the second protective film forming film. Affixed to

[Process (B-1)]
In the present embodiment, as in the first embodiment, after the steps (I), (II), and (III) are performed (that is, after the protective film 25A is formed on the semiconductor wafer 10), the semiconductor As shown in FIG. 11, a second protective film forming film 30 is bonded to the back surface 10B (the surface opposite to the bump surface) of the wafer. As shown in FIG. 10, the second protective film forming film 30 includes a second support sheet 33 and a second protective film forming layer 35 provided on the second support sheet 33. The protective film forming layer 35 is bonded to the back surface 10 </ b> B of the semiconductor wafer 10.
Here, as a specific example of the second support sheet 33, as shown in FIGS. 10 and 11, the second base material 31 and the second pressure-sensitive adhesive layer 32 formed on one surface of the second base material 31. And having the second protective film forming layer 35 formed on the second pressure-sensitive adhesive layer 32, as described in the first embodiment, it has another configuration. Also good. Further, as described in the first embodiment, the second support sheet 33 is formed with a second protective film as shown in FIGS. 10 and 11, for example, so that the outer peripheral region can be bonded to the support member 13 such as a ring frame. It is formed slightly larger than the formation layer 35.
However, the second support sheet 33 may be the same size as the second protective film forming layer 35. When the second support sheet 33 is the same size as the second protective film forming layer 35, the second protective film forming layer 35 and the second support sheet 33 are both formed slightly larger than the semiconductor wafer 10, An adhesive member such as a double-sided tape for bonding to the support member 13 may be provided on the outer peripheral region of the second protective film forming layer 35 that is not bonded to the semiconductor wafer 10.

[Process (B-2)]
In the present embodiment, after the step (B-1), the second protective film forming layer 35 is heated and cured to form the second protective film 35A (step (B-2)). The heating of the second protective film forming layer 35 is performed, for example, by placing the semiconductor wafer 10 in which the protective film 25A is formed on the front surface 10A side and the second protective film forming layer 35 is laminated on the back surface 10B side in a heating furnace or the like. It is preferable to carry out by arranging and heating. In addition, since the heating conditions in this process (B-2) are the same as the heating conditions demonstrated by process (III) of 1st Embodiment, the description is abbreviate | omitted.

  Next, the semiconductor wafer 10 having the protective film 25A and the second protective film 35A formed on both sides is diced (step (IV)). After dicing, the semiconductor chip 15 is picked up, and the semiconductor device is manufactured in the same manner as in the above embodiments.

  In the present embodiment, the second support sheet 33 is attached to the second protective film forming layer 35 when the second protective film forming layer 35 is cured by heating. Therefore, in order to prevent the adhesive force of the second support sheet 33 from becoming heavy during the heating in the step (B-2), the second support sheet 33 preferably has heat resistance. Since the 2nd support sheet 33 which has heat resistance is as having demonstrated above, the description is abbreviate | omitted.

  Also in the sixth embodiment described above, the bump neck is appropriately protected by the protective film 25A, and the back surface of the semiconductor wafer 10 (semiconductor chip 15) can be protected by the second protective film 35A. Further, in the present embodiment, the second protective film forming layer 35 and the second support sheet 33 are collectively attached to the back surface of the semiconductor wafer 10 as the second protective film forming film 30, thereby simplifying the process. Is possible.

In the sixth embodiment, the step (B-2) is performed before dicing (step (IV)), but the step (B-2) is not necessarily performed before dicing, and is performed after dicing. May be.
Specifically, after steps (I), (II), (III), and (B-1) are performed in this order, dicing is performed (step (IV)), and then step (B-2) is performed. carry out. Therefore, in the dicing, the semiconductor wafer 10 in which the protective film 25A is formed on the front surface 10A and the second protective film forming film 30 (that is, the second protective film forming layer 35 and the second support sheet 33) is stacked on the back surface 10B. Will be done.
Then, after dicing, in the step (B-2), the second protective film forming layer 35 is heated and cured. As described in the second embodiment, the heat curing was picked up. It is preferable to carry out later, and it is particularly preferable to cure by heating during reflow.

<Seventh Embodiment>
Next, a difference between the seventh embodiment and the sixth embodiment will be described.
In the said 6th Embodiment, the timing which heats and cures the thermosetting resin layer 25 and the 2nd protective film formation layer 35 was different, but in 7th Embodiment, these are heated simultaneously. To cure. That is, in the sixth embodiment, the process (III) and the process (B-2) are performed at different timings, but in the present embodiment, the process (III) and the process (B-2) are performed at the same timing. And do it.

That is, in this embodiment, after performing steps (I) and (II), step (B-1) is performed without performing step (III). Thus, in this embodiment, as shown in FIG. 12, the thermosetting resin layer 25 is laminated on the front surface 10A of the semiconductor wafer 10, and the second protective film forming film 30 (that is, the back surface 10B). The second protective film forming layer 35 and the second support sheet 33) are laminated.
Next, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated by heating the semiconductor wafer 10 in which the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both surfaces. Is cured to form the protective film 25A and the second protective film 35A (step (III) and step (B-2)). At this time, the semiconductor wafer 10 is supported by the second support sheet 33 attached on the second protective film 35A.

After the heat curing, the semiconductor wafer 10 supported by the second support sheet 33 is separated into pieces together with the protective film 25A and the second protective film 35A by dicing, and the protective film 25A and the second protective film 35A are formed on both surfaces. A semiconductor chip 15 is obtained (step (IV)). Thereafter, the semiconductor chip 15 is picked up, and the semiconductor device is manufactured in the same manner as in the above embodiments.
In the present embodiment, since the second protective film forming layer 35 is heat-cured in a state where the second support sheet 33 is stuck on the second protective film forming layer 35, the second support sheet 33 is It is preferable to have heat resistance. The details of the second support sheet having heat resistance are as described above.

  Also in the above seventh embodiment, the bump neck and the back surface 10B of the semiconductor wafer 10 (semiconductor chip 15) can be appropriately protected, and the process can be performed by using the second protective film forming film 30. It can be simplified. Furthermore, since the thermosetting resin layer 25 and the second protective film forming layer 35 are heated and cured at the same time, the process can be simplified and warpage occurring in the semiconductor wafer (semiconductor chip) can be prevented. Is possible.

<Eighth Embodiment>
Next, the difference between the eighth embodiment and the seventh embodiment will be described.
In the seventh embodiment, heat curing (step (III) and step (B-2)) of the thermosetting resin layer 25 and the second protective film forming layer 35 is performed before dicing (step (IV)). However, these need not be performed before dicing, and may be performed after dicing. This aspect will be described using the following eighth embodiment.

In the present embodiment, as in the seventh embodiment, after the steps (I), (II), and (B-1) are performed in this order, the semiconductor wafer 10 is diced and separated into semiconductor chips 15. (Step (IV)). Here, the dicing is performed on the semiconductor wafer 10 in which the thermosetting resin layer 25 is laminated on the front surface 10A and the second protective film forming layer 35 is laminated on the back surface 10B. At this time, the semiconductor wafer 10 is supported by the second support sheet 33 attached to the second protective film forming layer 35.
After dicing, the thermosetting resin layer 25 and the second protective film forming layer 35 on each semiconductor chip 15 are collectively heated and cured (steps (III) and (B-2)). In this case, the heat curing of the thermosetting resin layer 25 and the second protective film forming layer 35 is preferably performed after picking up as described above, and is particularly preferably cured by heating during reflow.
Also in the above eighth embodiment, as in the seventh embodiment, the bump neck and the back surface 10B of the semiconductor wafer 10 (semiconductor chip 15) can be appropriately protected, the process can be simplified, and the semiconductor wafer (semiconductor) It is also possible to prevent warping occurring in the chip). Further, the second support sheet need not have heat resistance.

In each of the above embodiments, the process (II) in which the first support sheet 23 is peeled is shown immediately after the process (I), but any stage before the process (III) is performed. You may go on. For example, in the fourth embodiment, the steps (I), (II), and (A-1) are performed in this order, and then the steps (III) and (A-2) are collectively performed. The steps (I), (A-1), and (II) may be performed in this order, and then the steps (III) and (A-2) may be performed collectively. The same applies to the fifth embodiment.
Furthermore, in the seventh embodiment, the steps (I), (II), and (B-1) are performed in this order, and then the step (III) and the step (B-2) are collectively performed. (I), (B-1), (II) may be performed in this order, and then step (III) and step (B-2) may be performed collectively. The same applies to the eighth embodiment.

In the second to eighth embodiments, the back grinding of the semiconductor wafer is not particularly mentioned. However, when the back grinding of the semiconductor wafer is performed, the step (I) is performed as in the first embodiment. And step (II). However, when the second protective film forming layer 35 is affixed to the back surface 10B of the semiconductor wafer 10, the back surface grinding is performed before the second protective film forming layer 35 is affixed.
In the fourth to eighth embodiments, laser printing may be performed on the second protective film 35 </ b> A or the second protective film forming layer 35. In the fourth embodiment, the cured second protective film 35A is exposed between the steps (III) and (A-2) and the step (A-3). Therefore, in the fourth embodiment, it is preferable to perform laser printing on the exposed second protective film 35A between the steps (III) and (A-2) and the step (A-3).

DESCRIPTION OF SYMBOLS 10 Semiconductor wafer 11 Bump 15 Semiconductor chip 20 1st protective film formation film 21 1st base material 22 1st adhesive layer 23 1st support sheet 25 Thermosetting resin layer 25A Protective film 30 2nd protective film formation film 31 Second base material 32 Second adhesive layer 33 Second support sheet 35 Second protective film forming layer 35A Second protective film 40 Chip mounting substrate

Claims (8)

(I) A first protective film-forming film in which a first support sheet and a thermosetting resin layer are provided in this order are bonded to the surface of a semiconductor wafer provided with bumps, and the thermosetting resin layer is bonded to the surface. The process of bonding to the surface,
(II) peeling the first support sheet from the thermosetting resin layer;
(III) heating and curing the thermosetting resin layer to form a protective film;
(IV) a step of dicing the semiconductor wafer together with a thermosetting resin layer or a protective film;
A method for manufacturing a semiconductor device comprising: (A-1) bonding the second protective film forming layer to the back surface of the semiconductor wafer;
(A-2) heating the second protective film forming layer to form a second protective film; and (A-3) the second protective film forming layer on the back surface of the semiconductor wafer, or a second protective film. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of bonding a second support sheet on the film. (B-1) A second protective film-forming film comprising a second support sheet and a second protective film-forming layer provided on the second support sheet, the second protective film-forming layer being bonded together And bonding to the back surface of the semiconductor wafer;
The method for manufacturing a semiconductor device according to claim 1, further comprising: (B-2) heating the second protective film forming layer to form a second protective film.   The method for manufacturing a semiconductor device according to claim 2, wherein the thermosetting resin layer and the second protective film forming layer are simultaneously heated to thermally cure them.   The semiconductor wafer separated into pieces by the dicing is arranged on the chip mounting substrate so that the surface side faces the chip mounting substrate, and fixed to the chip mounting substrate by reflow. 5. The method for manufacturing a semiconductor device according to claim 4.   The method for manufacturing a semiconductor device according to claim 5, wherein at least the second protective film forming layer is cured by the reflow heating. The first support sheet includes a first base material and a first pressure-sensitive adhesive layer provided on one surface of the first base material, and the thermosetting resin layer on the first pressure-sensitive adhesive layer. Is provided,
The melt viscosity of the thermosetting resin layer is 1 × 10 ² Pa · S or more and less than 2 × 10 ⁴ Pa · S at a temperature when the first protective film-forming film is bonded to the semiconductor wafer,
The shear elastic modulus of the first pressure-sensitive adhesive layer is 1 × 10 ³ Pa or more and 2 × 10 ⁶ Pa or less at a temperature when the first protective film-forming film is bonded to the semiconductor wafer. 7. The method for manufacturing a semiconductor device according to claim 6.   The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin layer has a thickness of 0.01 to 0.99 times a bump height.

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