TWI728996B - 帶功能層的聚醯亞胺基板膜與其製造方法、及長聚醯亞胺層疊體 - Google Patents
帶功能層的聚醯亞胺基板膜與其製造方法、及長聚醯亞胺層疊體 Download PDFInfo
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- TWI728996B TWI728996B TW105127980A TW105127980A TWI728996B TW I728996 B TWI728996 B TW I728996B TW 105127980 A TW105127980 A TW 105127980A TW 105127980 A TW105127980 A TW 105127980A TW I728996 B TWI728996 B TW I728996B
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- polyimide
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Classifications
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/76—Making of isolation regions between components
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
- B32B2037/243—Coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2038/0052—Other operations not otherwise provided for
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
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WO2018163884A1 (ja) * | 2017-03-10 | 2018-09-13 | コニカミノルタ株式会社 | 透明電極用基材フィルムおよびその製造方法 |
WO2018190179A1 (ja) * | 2017-04-10 | 2018-10-18 | 大日本印刷株式会社 | ポリイミドフィルム、積層体、及びディスプレイ用表面材 |
KR102018455B1 (ko) * | 2017-05-24 | 2019-09-04 | 주식회사 엘지화학 | 폴리이미드 적층필름 롤체 및 그 제조 방법 |
WO2018225825A1 (ja) * | 2017-06-08 | 2018-12-13 | 日産化学株式会社 | フレキシブルデバイス用基板の製造方法 |
JP7156036B2 (ja) * | 2017-12-15 | 2022-10-19 | 東レ株式会社 | 高分子薄膜の製造装置および製造方法 |
JP6400875B1 (ja) * | 2018-02-14 | 2018-10-03 | 住友化学株式会社 | 積層体 |
CN108735349B (zh) * | 2018-04-27 | 2020-03-31 | 东南大学 | 一种含离子液体的银纳米线透明导电薄膜及其制备方法 |
CN110628346A (zh) * | 2018-06-25 | 2019-12-31 | 昆山雅森电子材料科技有限公司 | 超薄高透明pi膜、含该pi膜的保护膜及制备方法 |
WO2020066595A1 (ja) * | 2018-09-28 | 2020-04-02 | 日鉄ケミカル&マテリアル株式会社 | 金属張積層板の製造方法及び回路基板の製造方法 |
KR102147319B1 (ko) | 2019-09-30 | 2020-08-24 | 에스케이이노베이션 주식회사 | 폴리이미드계 필름 및 이를 포함하는 플렉서블 디스플레이 패널 |
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TW201425048A (zh) * | 2012-09-27 | 2014-07-01 | Nippon Steel & Sumikin Chem Co | 顯示裝置之製造方法 |
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JP2009083201A (ja) * | 2007-09-28 | 2009-04-23 | Toyobo Co Ltd | 多層ポリイミドフィルム及び構造体、多層回路基板 |
JP5862238B2 (ja) * | 2011-05-27 | 2016-02-16 | 東洋紡株式会社 | 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法 |
KR102198316B1 (ko) * | 2012-06-19 | 2021-01-04 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 표시장치 및 그 제조방법, 그리고 표시장치 지지기재용 폴리이미드 필름 및 그 제조방법 |
JP6457168B2 (ja) * | 2012-06-19 | 2019-01-23 | 日鉄ケミカル&マテリアル株式会社 | 表示装置支持基材用ポリイミドフィルム、及びその積層体、並びその製造方法 |
WO2013191052A1 (ja) * | 2012-06-20 | 2013-12-27 | 東洋紡株式会社 | 積層体の作成方法および、積層体および、この積層体を利用したデバイス付き積層体の作成方法および、デバイス付き積層体 |
JP6265902B2 (ja) * | 2012-09-14 | 2018-01-24 | 三井化学株式会社 | 透明ポリイミド積層体及びその製造方法 |
JP5931672B2 (ja) * | 2012-09-24 | 2016-06-08 | 新日鉄住金化学株式会社 | ポリイミド積層体及びその製造方法 |
JP6067419B2 (ja) * | 2013-02-28 | 2017-01-25 | 新日鉄住金化学株式会社 | 積層部材の製造方法 |
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