TWI728157B - 同時捕捉來自多個目標之重疊信號 - Google Patents

同時捕捉來自多個目標之重疊信號 Download PDF

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Publication number
TWI728157B
TWI728157B TW106125402A TW106125402A TWI728157B TW I728157 B TWI728157 B TW I728157B TW 106125402 A TW106125402 A TW 106125402A TW 106125402 A TW106125402 A TW 106125402A TW I728157 B TWI728157 B TW I728157B
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TW
Taiwan
Prior art keywords
illumination
pupil plane
path
pupil
target
Prior art date
Application number
TW106125402A
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English (en)
Chinese (zh)
Other versions
TW201805593A (zh
Inventor
安卓 Ｖ 希爾
阿農 馬那森
尤瑞 帕斯卡維爾
尤法 路巴希福斯基
Original Assignee
美商克萊譚克公司
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Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201805593A publication Critical patent/TW201805593A/zh
Application granted granted Critical
Publication of TWI728157B publication Critical patent/TWI728157B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Immunology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
TW106125402A 2016-07-28 2017-07-28 同時捕捉來自多個目標之重疊信號 TWI728157B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/222,503 2016-07-28
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets

Publications (2)

Publication Number Publication Date
TW201805593A TW201805593A (zh) 2018-02-16
TWI728157B true TWI728157B (zh) 2021-05-21

Family

ID=61009490

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106125402A TWI728157B (zh) 2016-07-28 2017-07-28 同時捕捉來自多個目標之重疊信號

Country Status (7)

Country Link
US (2) US10048132B2 (cg-RX-API-DMAC7.html)
JP (1) JP6771647B2 (cg-RX-API-DMAC7.html)
KR (1) KR102180433B1 (cg-RX-API-DMAC7.html)
CN (2) CN109564160B (cg-RX-API-DMAC7.html)
SG (2) SG11201900509YA (cg-RX-API-DMAC7.html)
TW (1) TWI728157B (cg-RX-API-DMAC7.html)
WO (1) WO2018023078A1 (cg-RX-API-DMAC7.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3528047A1 (en) * 2018-02-14 2019-08-21 ASML Netherlands B.V. Method and apparatus for measuring a parameter of interest using image plane detection techniques
US10809124B2 (en) * 2018-05-07 2020-10-20 Perkinelmer Health Sciences, Inc. Spectrometers and instruments including them
EP3575875A1 (en) 2018-05-31 2019-12-04 ASML Netherlands B.V. Measurement apparatus and method of measuring a target
US11281111B2 (en) * 2018-08-28 2022-03-22 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
JP7169435B2 (ja) * 2018-09-19 2022-11-10 エーエスエムエル ネザーランズ ビー．ブイ． 位置計測用メトロロジセンサ
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ（ｓｃｏｌ）測定方法及びｓｃｏｌ測定システム
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
CN115004113A (zh) * 2020-01-29 2022-09-02 Asml荷兰有限公司 量测方法和用于测量衬底上的周期性结构的装置
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
WO2022040207A1 (en) * 2020-08-17 2022-02-24 Tokyo Electron Limited Tunable wavelength see-through layer stack
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
CN118159913A (zh) * 2021-10-29 2024-06-07 Asml荷兰有限公司 检查装置、可旋转保偏射束移位器和方法
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
WO2024017649A1 (en) * 2022-07-19 2024-01-25 Asml Netherlands B.V. Enhanced alignment apparatus for lithographic systems
US20250362617A1 (en) * 2022-08-10 2025-11-27 Asml Netherlands B.V. Metrology method and associated metrology device
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070296973A1 (en) * 2006-06-22 2007-12-27 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20090168062A1 (en) * 2007-10-25 2009-07-02 Asml Netherlands B.V. Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell, and Device Manufacturing Method to Measure a Property of a Substrate
US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
US8896832B2 (en) * 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
US20160161864A1 (en) * 2013-08-07 2016-06-09 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
US20160195705A1 (en) * 2014-12-06 2016-07-07 Howard Hughes Medical Institute Microscopy with structured plane illumination and point accumulation for imaging and nanoscale topography

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600638A (nl) * 1986-03-12 1987-10-01 Philips Nv Inrichting voor het ten opzichte van elkaar uitrichten van een masker en een substraat.
JPH05157521A (ja) * 1991-08-29 1993-06-22 Nkk Corp エリプソパラメータ測定方法及びエリプソメータ
US5734498A (en) * 1994-05-09 1998-03-31 The Regents Of The University Of California Illuminator elements for conventional light microscopes
US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
US6768543B1 (en) 2001-11-01 2004-07-27 Arun Ananth Aiyer Wafer inspection apparatus with unique illumination methodology and method of operation
US7957066B2 (en) 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US7561282B1 (en) 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
US8120996B2 (en) * 2006-04-04 2012-02-21 Tesa Scribos Gmbh Device and method for microstructuring a storage medium and storage medium comprising a microstructured region
US7701577B2 (en) * 2007-02-21 2010-04-20 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
NL2006229A (en) * 2010-03-18 2011-09-20 Asml Netherlands Bv Inspection method and apparatus, and associated computer readable product.
NL2010259A (en) * 2012-04-12 2013-10-16 Asml Holding Nv Position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method, optical element.
US9778025B2 (en) 2012-08-16 2017-10-03 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
US9892812B2 (en) * 2012-10-30 2018-02-13 California Institute Of Technology Fourier ptychographic x-ray imaging systems, devices, and methods
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
JP2016530567A (ja) * 2013-08-22 2016-09-29 カリフォルニア インスティチュート オブ テクノロジー 可変照明フーリエタイコグラフィー撮像装置、システム、及び方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070296973A1 (en) * 2006-06-22 2007-12-27 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20090168062A1 (en) * 2007-10-25 2009-07-02 Asml Netherlands B.V. Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell, and Device Manufacturing Method to Measure a Property of a Substrate
US8896832B2 (en) * 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
US20160161864A1 (en) * 2013-08-07 2016-06-09 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method
US20160195705A1 (en) * 2014-12-06 2016-07-07 Howard Hughes Medical Institute Microscopy with structured plane illumination and point accumulation for imaging and nanoscale topography

Also Published As

Publication number Publication date
US10048132B2 (en) 2018-08-14
CN112432926A (zh) 2021-03-02
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
KR102180433B1 (ko) 2020-11-19
KR20190026039A (ko) 2019-03-12
SG11201900509YA (en) 2019-02-27
CN112432926B (zh) 2025-10-10
US20180031424A1 (en) 2018-02-01
US20180335346A1 (en) 2018-11-22
US10401228B2 (en) 2019-09-03
JP2019526053A (ja) 2019-09-12
SG10201912512UA (en) 2020-02-27
CN109564160B (zh) 2020-11-10
CN109564160A (zh) 2019-04-02
JP6771647B2 (ja) 2020-10-21

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