TWI727005B - 在較低頻射頻產生器期間減少反射到較高頻射頻產生器之功率及使用一關係以減少反射功率之系統及方法 - Google Patents

在較低頻射頻產生器期間減少反射到較高頻射頻產生器之功率及使用一關係以減少反射功率之系統及方法 Download PDF

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Publication number
TWI727005B
TWI727005B TW106106911A TW106106911A TWI727005B TW I727005 B TWI727005 B TW I727005B TW 106106911 A TW106106911 A TW 106106911A TW 106106911 A TW106106911 A TW 106106911A TW I727005 B TWI727005 B TW I727005B
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TW
Taiwan
Prior art keywords
complex
value
generator
radio frequency
computer models
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Application number
TW106106911A
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English (en)
Chinese (zh)
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TW201738956A (zh
Inventor
亞瑟 Ｍ 豪瓦德
約翰 Ｃ 小微寇爾
安德魯 馮
大衛 霍普金斯
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美商蘭姆研究公司
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Publication date
Priority claimed from US15/061,705 external-priority patent/US10296676B2/en
Priority claimed from US15/098,189 external-priority patent/US9711332B2/en
Priority claimed from US15/098,566 external-priority patent/US10276350B2/en
Priority claimed from US15/098,912 external-priority patent/US10469108B2/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201738956A publication Critical patent/TW201738956A/zh
Application granted granted Critical
Publication of TWI727005B publication Critical patent/TWI727005B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B17/00—Systems involving the use of models or simulators of said systems
    • G05B17/02—Systems involving the use of models or simulators of said systems electric
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
TW106106911A 2016-03-04 2017-03-03 在較低頻射頻產生器期間減少反射到較高頻射頻產生器之功率及使用一關係以減少反射功率之系統及方法 TWI727005B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US15/061,705 US10296676B2 (en) 2013-05-09 2016-03-04 Systems and methods for tuning an impedance matching network in a step-wise fashion
US15/061,705 2016-03-04
US15/098,189 2016-04-13
US15/098,189 US9711332B2 (en) 2013-05-09 2016-04-13 Systems and methods for tuning an impedance matching network in a step-wise fashion for multiple states of an RF generator
US15/098,912 2016-04-14
US15/098,566 US10276350B2 (en) 2013-05-09 2016-04-14 Systems and methods for using computer-generated models to reduce reflected power towards an RF generator during state transitions of the RF generator by controlling RF values of the RF generator
US15/098,566 2016-04-14
US15/098,912 US10469108B2 (en) 2013-05-09 2016-04-14 Systems and methods for using computer-generated models to reduce reflected power towards a high frequency RF generator during a cycle of operations of a low frequency RF generator

Publications (2)

Publication Number Publication Date
TW201738956A TW201738956A (zh) 2017-11-01
TWI727005B true TWI727005B (zh) 2021-05-11

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TW106106911A TWI727005B (zh) 2016-03-04 2017-03-03 在較低頻射頻產生器期間減少反射到較高頻射頻產生器之功率及使用一關係以減少反射功率之系統及方法

Country Status (4)

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JP (1) JP6909590B2 (ja)
KR (1) KR20170103661A (ja)
CN (1) CN107154334B (ja)
TW (1) TWI727005B (ja)

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US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
JP7345155B2 (ja) 2019-01-31 2023-09-15 Ｓｐｉｂｅｒ株式会社 保温性付与剤、及び物品に保温性を付与する方法
CN114207768A (zh) * 2019-06-07 2022-03-18 朗姆研究公司 用于在kHz RF发生器的操作循环内调谐MHz RF发生器的系统和方法
JP2022102688A (ja) 2020-12-25 2022-07-07 株式会社ダイヘン 高周波電源システム
CN113065237B (zh) * 2021-03-19 2022-11-08 四川英杰电气股份有限公司 一种自动设置调频边界的方法和射频电源
US11923175B2 (en) * 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
JP2023050839A (ja) 2021-09-30 2023-04-11 株式会社ダイヘン 高周波電源装置
CN114217121A (zh) * 2021-12-08 2022-03-22 通鼎互联信息股份有限公司 一种确定射频额定平均功率的电气实验方法
JP2023098203A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2023097863A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源システム
JP2023098299A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2023098298A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
CN115954257B (zh) * 2023-03-14 2023-05-23 长鑫存储技术有限公司 衬底处理装置、气体约束组件及其调节方法、调节装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW418593B (en) * 1998-02-09 2001-01-11 Eni Tech Inc Ratiometric autotuning algorithm for RF plasma generator
TW200419631A (en) * 2002-10-01 2004-10-01 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
US20050029954A1 (en) * 2003-08-06 2005-02-10 Canon Kabushiki Kaisha Plasma processing apparatus and method
TW201004488A (en) * 2008-03-23 2010-01-16 Advanced Energy Ind Inc Method and apparatus for advanced frequency tuning
TW201513566A (zh) * 2013-09-30 2015-04-01 普來馬特股份有限公司 阻抗匹配方法與阻抗匹配系統

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9030101B2 (en) * 2012-02-22 2015-05-12 Lam Research Corporation Frequency enhanced impedance dependent power control for multi-frequency RF pulsing
US9620337B2 (en) * 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
TWI647735B (zh) * 2013-03-15 2019-01-11 美商蘭姆研究公司 使用模型化以建立與電漿系統相關的離子能量

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW418593B (en) * 1998-02-09 2001-01-11 Eni Tech Inc Ratiometric autotuning algorithm for RF plasma generator
TW200419631A (en) * 2002-10-01 2004-10-01 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
US20050029954A1 (en) * 2003-08-06 2005-02-10 Canon Kabushiki Kaisha Plasma processing apparatus and method
TW201004488A (en) * 2008-03-23 2010-01-16 Advanced Energy Ind Inc Method and apparatus for advanced frequency tuning
TW201513566A (zh) * 2013-09-30 2015-04-01 普來馬特股份有限公司 阻抗匹配方法與阻抗匹配系統

Also Published As

Publication number Publication date
KR20170103661A (ko) 2017-09-13
JP6909590B2 (ja) 2021-07-28
CN107154334A (zh) 2017-09-12
JP2017188434A (ja) 2017-10-12
TW201738956A (zh) 2017-11-01
CN107154334B (zh) 2019-03-19

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