KR20170103661A - 보다 저 주파수 rf 생성기의 기간 동안 보다 고 주파수 rf 생성기를 향하여 반사된 전력을 감소시키고 그리고 반사된 전력을 감소시키도록 관계를 사용하기 위한 시스템들 및 방법들 - Google Patents

보다 저 주파수 rf 생성기의 기간 동안 보다 고 주파수 rf 생성기를 향하여 반사된 전력을 감소시키고 그리고 반사된 전력을 감소시키도록 관계를 사용하기 위한 시스템들 및 방법들 Download PDF

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Publication number
KR20170103661A
KR20170103661A KR1020170025518A KR20170025518A KR20170103661A KR 20170103661 A KR20170103661 A KR 20170103661A KR 1020170025518 A KR1020170025518 A KR 1020170025518A KR 20170025518 A KR20170025518 A KR 20170025518A KR 20170103661 A KR20170103661 A KR 20170103661A
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South Korea
Prior art keywords
values
generator
cycle
value
parameter values
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KR1020170025518A
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English (en)
Korean (ko)
Inventor
아더 엠. 하워드
주니어 존 씨. 발코어
앤드류 퐁
데이비드 홉킨스
Original Assignee
램 리써치 코포레이션
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Publication date
Priority claimed from US15/061,705 external-priority patent/US10296676B2/en
Priority claimed from US15/098,189 external-priority patent/US9711332B2/en
Priority claimed from US15/098,566 external-priority patent/US10276350B2/en
Priority claimed from US15/098,912 external-priority patent/US10469108B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20170103661A publication Critical patent/KR20170103661A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B17/00—Systems involving the use of models or simulators of said systems
    • G05B17/02—Systems involving the use of models or simulators of said systems electric
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
KR1020170025518A 2016-03-04 2017-02-27 보다 저 주파수 rf 생성기의 기간 동안 보다 고 주파수 rf 생성기를 향하여 반사된 전력을 감소시키고 그리고 반사된 전력을 감소시키도록 관계를 사용하기 위한 시스템들 및 방법들 KR20170103661A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US15/061,705 US10296676B2 (en) 2013-05-09 2016-03-04 Systems and methods for tuning an impedance matching network in a step-wise fashion
US15/061,705 2016-03-04
US15/098,189 2016-04-13
US15/098,189 US9711332B2 (en) 2013-05-09 2016-04-13 Systems and methods for tuning an impedance matching network in a step-wise fashion for multiple states of an RF generator
US15/098,912 2016-04-14
US15/098,566 US10276350B2 (en) 2013-05-09 2016-04-14 Systems and methods for using computer-generated models to reduce reflected power towards an RF generator during state transitions of the RF generator by controlling RF values of the RF generator
US15/098,566 2016-04-14
US15/098,912 US10469108B2 (en) 2013-05-09 2016-04-14 Systems and methods for using computer-generated models to reduce reflected power towards a high frequency RF generator during a cycle of operations of a low frequency RF generator

Publications (1)

Publication Number Publication Date
KR20170103661A true KR20170103661A (ko) 2017-09-13

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KR1020170025518A KR20170103661A (ko) 2016-03-04 2017-02-27 보다 저 주파수 rf 생성기의 기간 동안 보다 고 주파수 rf 생성기를 향하여 반사된 전력을 감소시키고 그리고 반사된 전력을 감소시키도록 관계를 사용하기 위한 시스템들 및 방법들

Country Status (4)

Country Link
JP (1) JP6909590B2 (ja)
KR (1) KR20170103661A (ja)
CN (1) CN107154334B (ja)
TW (1) TWI727005B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
JP7345155B2 (ja) 2019-01-31 2023-09-15 Ｓｐｉｂｅｒ株式会社 保温性付与剤、及び物品に保温性を付与する方法
CN114207768A (zh) * 2019-06-07 2022-03-18 朗姆研究公司 用于在kHz RF发生器的操作循环内调谐MHz RF发生器的系统和方法
JP2022102688A (ja) 2020-12-25 2022-07-07 株式会社ダイヘン 高周波電源システム
CN113065237B (zh) * 2021-03-19 2022-11-08 四川英杰电气股份有限公司 一种自动设置调频边界的方法和射频电源
US11923175B2 (en) * 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
JP2023050839A (ja) 2021-09-30 2023-04-11 株式会社ダイヘン 高周波電源装置
CN114217121A (zh) * 2021-12-08 2022-03-22 通鼎互联信息股份有限公司 一种确定射频额定平均功率的电气实验方法
JP2023098203A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2023097863A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源システム
JP2023098299A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
JP2023098298A (ja) 2021-12-28 2023-07-10 株式会社ダイヘン 高周波電源装置
CN115954257B (zh) * 2023-03-14 2023-05-23 长鑫存储技术有限公司 衬底处理装置、气体约束组件及其调节方法、调节装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6020794A (en) * 1998-02-09 2000-02-01 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
JP2005056768A (ja) * 2003-08-06 2005-03-03 Canon Inc プラズマ処理装置及び方法
US7839223B2 (en) * 2008-03-23 2010-11-23 Advanced Energy Industries, Inc. Method and apparatus for advanced frequency tuning
US9030101B2 (en) * 2012-02-22 2015-05-12 Lam Research Corporation Frequency enhanced impedance dependent power control for multi-frequency RF pulsing
US9620337B2 (en) * 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
TWI647735B (zh) * 2013-03-15 2019-01-11 美商蘭姆研究公司 使用模型化以建立與電漿系統相關的離子能量
KR101544975B1 (ko) * 2013-09-30 2015-08-18 주식회사 플라즈마트 임피던스 매칭 방법 및 임피던스 매칭 시스템

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Publication number Publication date
JP6909590B2 (ja) 2021-07-28
CN107154334A (zh) 2017-09-12
JP2017188434A (ja) 2017-10-12
TW201738956A (zh) 2017-11-01
TWI727005B (zh) 2021-05-11
CN107154334B (zh) 2019-03-19

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