TWI724429B - 基板處理方法及基板處理裝置 - Google Patents
基板處理方法及基板處理裝置 Download PDFInfo
- Publication number
- TWI724429B TWI724429B TW108118198A TW108118198A TWI724429B TW I724429 B TWI724429 B TW I724429B TW 108118198 A TW108118198 A TW 108118198A TW 108118198 A TW108118198 A TW 108118198A TW I724429 B TWI724429 B TW I724429B
- Authority
- TW
- Taiwan
- Prior art keywords
- clamping
- substrate
- unit
- state
- spin drying
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 589
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 title claims description 112
- 230000002093 peripheral effect Effects 0.000 claims abstract description 177
- 238000001035 drying Methods 0.000 claims abstract description 149
- 239000007788 liquid Substances 0.000 claims description 238
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 195
- 239000003480 eluent Substances 0.000 claims description 69
- 239000000126 substance Substances 0.000 claims description 53
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 230000007704 transition Effects 0.000 claims description 21
- 239000003814 drug Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 6
- 239000003575 carbonaceous material Substances 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 50
- 239000000243 solution Substances 0.000 description 33
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 25
- 239000007789 gas Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 19
- 239000011261 inert gas Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 239000004696 Poly ether ether ketone Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- -1 poly Trifluorochloroethylene Polymers 0.000 description 6
- 229920002530 polyetherether ketone Polymers 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000012487 rinsing solution Substances 0.000 description 5
- 229920000049 Carbon (fiber) Polymers 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000004917 carbon fiber Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- VSHBTVRLYANFBK-UHFFFAOYSA-N ozone sulfuric acid Chemical compound [O-][O+]=O.OS(O)(=O)=O VSHBTVRLYANFBK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018102558A JP7144193B2 (ja) | 2018-05-29 | 2018-05-29 | 基板処理方法および基板処理装置 |
JP2018-102558 | 2018-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202004983A TW202004983A (zh) | 2020-01-16 |
TWI724429B true TWI724429B (zh) | 2021-04-11 |
Family
ID=68698843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108118198A TWI724429B (zh) | 2018-05-29 | 2019-05-27 | 基板處理方法及基板處理裝置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7144193B2 (ja) |
TW (1) | TWI724429B (ja) |
WO (1) | WO2019230564A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7508296B2 (ja) | 2020-07-14 | 2024-07-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7391450B2 (ja) * | 2021-03-30 | 2023-12-05 | ▲騰▼▲訊▼科技(深▲セン▼)有限公司 | フォトレジスト除去方法及びフォトレジスト除去システム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09107023A (ja) * | 1995-10-13 | 1997-04-22 | Toshiba Microelectron Corp | 被処理物の回転保持装置 |
JP2015084450A (ja) * | 2015-01-08 | 2015-04-30 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記憶媒体 |
JP2018046062A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2018
- 2018-05-29 JP JP2018102558A patent/JP7144193B2/ja active Active
-
2019
- 2019-05-23 WO PCT/JP2019/020516 patent/WO2019230564A1/ja active Application Filing
- 2019-05-27 TW TW108118198A patent/TWI724429B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09107023A (ja) * | 1995-10-13 | 1997-04-22 | Toshiba Microelectron Corp | 被処理物の回転保持装置 |
JP2015084450A (ja) * | 2015-01-08 | 2015-04-30 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記憶媒体 |
JP2018046062A (ja) * | 2016-09-12 | 2018-03-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2019207948A (ja) | 2019-12-05 |
TW202004983A (zh) | 2020-01-16 |
WO2019230564A1 (ja) | 2019-12-05 |
JP7144193B2 (ja) | 2022-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI709169B (zh) | 基板處理方法及基板處理裝置 | |
KR101833684B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR100848981B1 (ko) | 기판처리방법 및 기판처리장치 | |
US9892955B2 (en) | Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method | |
US10854479B2 (en) | Substrate processing method and substrate processing device | |
CN108028192B (zh) | 基板处理方法及基板处理装置 | |
US10192771B2 (en) | Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method | |
US11465167B2 (en) | Substrate treatment apparatus | |
US11764055B2 (en) | Substrate processing method and substrate processing device | |
US10978317B2 (en) | Substrate processing method and substrate processing apparatus | |
TWI724429B (zh) | 基板處理方法及基板處理裝置 | |
JP6811675B2 (ja) | 基板処理方法および基板処理装置 | |
KR102123171B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
US11154913B2 (en) | Substrate treatment method and substrate treatment device | |
JP6502037B2 (ja) | 基板処理装置および基板処理方法 | |
KR101939905B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
TW202019564A (zh) | 基板處理方法及基板處理裝置 | |
TWI822492B (zh) | 基板處理方法及基板處理裝置 | |
JP2020174193A (ja) | 基板処理装置および基板処理方法 |