TWI724098B - Heater and fixing device, image forming device and heating device provided with the same - Google Patents
Heater and fixing device, image forming device and heating device provided with the same Download PDFInfo
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- TWI724098B TWI724098B TW106103315A TW106103315A TWI724098B TW I724098 B TWI724098 B TW I724098B TW 106103315 A TW106103315 A TW 106103315A TW 106103315 A TW106103315 A TW 106103315A TW I724098 B TWI724098 B TW I724098B
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- heater
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- soaking
- heating
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/20—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat
- G03G15/2003—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat using heat
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/20—Apparatus for electrographic processes using a charge pattern for fixing, e.g. by using heat
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0095—Heating devices in the form of rollers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/004—Heaters using a particular layout for the resistive material or resistive elements using zigzag layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
- Fixing For Electrophotography (AREA)
Abstract
提供一種在與被加熱物對面之狀態下,掃掠被加熱物及主加熱器(1)中之一方而加熱被加熱物的加熱器,其藉由具備:基體(11);被設置在基體(11)之一面(11a)側的發熱層(12);被配置在基體(11)和發熱層(12)之層間,及基體(11)之另一面(11b)側中之至少一方,藉由熱傳導率大於構成基體(11)之材料的材料而被形成的均熱層(13),使因發熱層所引起的熱之起伏難以反映在加熱面,均熱性優良的加熱器、具備此之定影裝置、畫像形成裝置及加熱裝置。 Provided is a heater that scans one of the object to be heated and the main heater (1) while facing the object to be heated, and heats the object to be heated. The heater is provided with: a base body (11); (11) The heating layer (12) on one side (11a); is arranged between the substrate (11) and the heating layer (12), and at least one of the other side (11b) side of the substrate (11), by The soaking layer (13) formed by a material with a higher thermal conductivity than the material constituting the base (11) makes it difficult for the fluctuations of heat caused by the heating layer to be reflected on the heating surface. A heater with excellent soaking property is equipped with this Fixing device, image forming device and heating device.
Description
本發係關於加熱器和具備此之定影裝置、畫像形成裝置及加熱裝置。詳細而言,關於均熱性優良的加熱器和具備此之定影裝置、畫像形成裝置及加熱裝置。 This invention relates to a heater, a fixing device, an image forming device, and a heating device equipped with the heater. In detail, regarding the heater with excellent heat uniformity, the fixing device, the image forming device, and the heating device provided with the heater.
作為用以進行對象物之熱處理的加熱手段,所知的有利用在被形成薄的基體,在其一面設置有通電發熱之發熱層的加熱器。由於如此之加熱器可以形成小型,故在例如被組裝於影印機或印表機等而在記錄媒體定影碳粉或油墨等之目的下被使用,或在被組裝於乾燥機而使面板等之被處理體均勻加熱乾燥之目的下被使用。如此之加熱器揭示於下述專利文獻1。
As a heating means for heat treatment of an object, a heater is known that uses a thin substrate formed with a heat generating layer provided on one side of the substrate. Since such a heater can be made compact, it is used for the purpose of fixing toner or ink to the recording medium, for example, when it is assembled in a photocopier or printer, or when it is assembled in a dryer to make the panel, etc. It is used for the purpose of uniform heating and drying of the processed body. Such a heater is disclosed in
[專利文獻1]國際公開第2013/073276號冊子 [Patent Document 1] International Publication No. 2013/073276 pamphlet
在如此之加熱器中,藉由利用被形成薄的基體,可以省電力,並且取得快速上升特性。另外,在當使用被形成薄的基體時,則有被設置在其一面之發熱層的例如因圖案形狀等所引起之熱的起伏,容易出現在加熱面之問題。並且,近來,要求較以往更小型的加熱器,尤其要求較掃掠方向寬窄的加熱器。如此朝掃掠方向之寬窄化,牽扯到更顯著地朝加熱面反映因發熱層之圖案所引起之熱的起伏,其對策成為必要。 In such a heater, by using a thin base, power can be saved and rapid rise characteristics can be achieved. In addition, when a thin substrate is used, there is a problem of heat fluctuations of the heat generating layer provided on one side of the heat generating layer, for example, caused by the shape of the pattern, which is likely to occur on the heating surface. In addition, recently, heaters with a smaller size than in the past are required, especially heaters that are wider and narrower than the sweep direction. This narrowing of the width in the sweep direction involves more prominently reflecting the heat fluctuations caused by the pattern of the heating layer toward the heating surface, and countermeasures are necessary.
本發明係鑒於上述課題而創作出,其目的係提供因發熱層所引起之熱的起伏難以反映在加熱面,且均熱性優良的加熱器,和具備此之定影裝置、畫像形成裝置及加熱裝置。 The present invention was created in view of the above-mentioned problems, and its purpose is to provide a heater that is difficult to reflect the fluctuation of heat caused by the heating layer on the heating surface and has excellent heat uniformity, and a fixing device, an image forming device, and a heating device provided with the heater .
本發明如同下述般。 The present invention is as follows.
請求項1所記載之加熱器係在與被加熱物面對面之狀態下,掃掠上述被加熱物及主加熱器中之一方而加熱上述被加熱物,其要旨係該加熱器具備:基體;發熱層,其係被設置在上述基體之一面側;及均熱層,其係被配置在上述基體和上述發熱層之層間,及上述基體之另一面側中之至少一方,藉由熱傳導率大於構成上述基體之材料的材料而被形成。
The heater described in
請求項2所記載之加熱器係如請求項1所記載之加熱器中,其要旨係作為上述均熱層,具有直接積層於上述基體之直接積層型的均熱層。
The heater described in
請求項3所記載之加熱器係如請求項1或2所記載之加熱器中,其要旨係作為上述均熱層,具有使玻璃釉層介於與上述基體之間而被積層之間接積層型的均熱層。
The heater described in
如請求項4所記載之加熱器係如請求項1至3中之任一項所記載之加熱器中,其要旨係上述均熱層,具有包含切口,或在表背貫通的貫通孔的缺漏部,隔著上述缺漏部,與上述均熱層之一面側鄰接之層,和與上述均熱層之另一面側鄰接之層接合。
The heater described in
請求項5所記載之加熱器係如請求項1至4中之任一項所記載之加熱器中,其要旨係上述均熱層具有複數之金屬粒子相連而被形成的金屬多孔部,和被配置在上述金屬多孔部之間隙的非金屬部。
The heater described in
請求項6所記載之加熱器係如請求項1至5中之任一項所記載之加熱器中,其要旨係上述發熱層具備被電性並聯連接的複數之電阻發熱單元,各上述電阻發熱單元具有電阻發熱配線,其係連結被配置成相對於上述掃掠方向呈略垂直的複數之橫配線部,和連接上述橫配線部間的縱配線部而被形成髮夾彎狀,在相鄰之上述電阻發熱單元彼此之間,具有不形成上述電阻發熱配線的非形成部。
The heater described in
請求項7所記載之定影裝置之要旨係具備如請求項1 至6中之任一項所記載之加熱器。 The gist of the fixing device described in claim 7 is that it has the following requirements: The heater described in any one of to 6.
請求項8所記載之畫像形成裝置之要旨係具備如請求項1至6中之任一項所記載之加熱器。
The gist of the image forming apparatus described in
請求項9所記載之加熱裝置之要旨係具備如請求項1至6中之任一項所記載之加熱器。
The gist of the heating device described in
若藉由本發明之加熱器,可以使成為因發熱層所引起之熱的起伏難以反映在加熱面,且均熱性優良的加熱器。 According to the heater of the present invention, it is possible to make the fluctuation of heat caused by the heating layer difficult to be reflected on the heating surface, and has excellent heat uniformity.
作為均熱層,在具有直接被積層在基體之直接積層型的均熱層之情況下,比起不具有該均熱層之情況下可以取得更優良的均熱性。 As the soaking layer, in the case of a direct-laminated type soaking layer that is directly laminated on the substrate, better heat soaking properties can be obtained than in the case of not having the soaking layer.
作為均熱層,在具有使玻璃釉層介於與基體之間而被積層之間接積層型的均熱層之情況下,比起不具有該均熱層之情況下可以取得更優良的均熱性。 As the soaking layer, when the glass glaze layer is interposed with the substrate and the laminated layer is connected between the laminated layers, it can achieve better heat soaking than the case without the soaking layer. .
1‧‧‧加熱器 1‧‧‧Heater
1a‧‧‧加熱器之一面 1a‧‧‧One side of heater
1b‧‧‧加熱器之另一面(加熱面) 1b‧‧‧The other side of the heater (heating surface)
11‧‧‧基體 11‧‧‧Matrix
11a‧‧‧基體之一面 11a‧‧‧One side of the substrate
11b‧‧‧基體之另一面 11b‧‧‧The other side of the substrate
12‧‧‧發熱層 12‧‧‧Heating layer
121‧‧‧電阻發熱配線 121‧‧‧Resistance heating wiring
122‧‧‧橫配線部 122‧‧‧Horizontal wiring part
123‧‧‧縱配線部 123‧‧‧Vertical wiring part
124‧‧‧電阻發熱單元 124‧‧‧Resistance heating unit
125‧‧‧非形成部 125‧‧‧Non-formed part
13‧‧‧均熱層 13‧‧‧Heat layer
131‧‧‧直接積層型之均熱層 131‧‧‧Direct stack type thermal layer
132‧‧‧間接積層型之均熱層 132‧‧‧Indirect laminated type thermal layer
133X‧‧‧缺漏部 133X‧‧‧Missing part
133H‧‧‧貫通孔 133H‧‧‧Through hole
133S‧‧‧切口 133S‧‧‧Cut
135a‧‧‧金屬多孔部 135a‧‧‧Metal porous part
135b‧‧‧非金屬部 135b‧‧‧Non-metallic Department
14、141、142、143‧‧‧絕緣層(玻璃釉層) 14,141,142,143‧‧‧Insulation layer (glass glaze layer)
2‧‧‧被加熱物 2‧‧‧Object to be heated
4‧‧‧畫像形成裝置 4‧‧‧Portrait forming device
41‧‧‧雷射掃描器 41‧‧‧Laser Scanner
42‧‧‧反射鏡 42‧‧‧Mirror
43‧‧‧帶電裝置 43‧‧‧Charged device
44‧‧‧感光滾筒 44‧‧‧Photosensitive drum
45‧‧‧顯像器 45‧‧‧Visualizer
46‧‧‧轉印滾筒 46‧‧‧Transfer roller
47‧‧‧轉印用輥 47‧‧‧Transfer Roller
5‧‧‧定影裝置(定影手段) 5‧‧‧Fixing device (fixing means)
51‧‧‧定影用輥 51‧‧‧Fixing roller
52‧‧‧加壓用輥 52‧‧‧Pressure roller
53‧‧‧加熱器保持器 53‧‧‧Heater holder
54‧‧‧加壓用輥 54‧‧‧Pressure roller
P‧‧‧記錄用媒體 P‧‧‧Recording media
D1‧‧‧掃掠方向 D 1 ‧‧‧Sweep direction
D2‧‧‧寬度方向 D 2 ‧‧‧Width direction
圖1為表示主加熱器之型態之一例(實施例1)的示意性之剖面圖。 Fig. 1 is a schematic cross-sectional view showing an example (embodiment 1) of the type of the main heater.
圖2為表示主加熱器之型態之另一例(實施例2)的示意性之剖面圖。 Fig. 2 is a schematic cross-sectional view showing another example (embodiment 2) of the type of the main heater.
圖3為表示主加熱器之型態之另一例(實施例3)的 示意性之剖面圖。 Figure 3 shows another example (embodiment 3) of the type of the main heater Schematic cross-sectional view.
圖4為表示主加熱器之型態之另一例(實施例4)的示意性之剖面圖。 Fig. 4 is a schematic cross-sectional view showing another example (Embodiment 4) of the type of the main heater.
圖5為表示主加熱器之型態之另一例(實施例7)的示意性之剖面圖。 Fig. 5 is a schematic cross-sectional view showing another example (Embodiment 7) of the type of the main heater.
圖6為表示主加熱器之型態之另一例(實施例8)的示意性之剖面圖。 Fig. 6 is a schematic cross-sectional view showing another example (Embodiment 8) of the type of the main heater.
圖7為表示主加熱器之型態之另一例的示意性之剖面圖。 Fig. 7 is a schematic cross-sectional view showing another example of the type of the main heater.
圖8為例示主加熱器中之發熱層和均熱層之相關的示意性之俯視圖。 Fig. 8 is a schematic plan view illustrating the relationship between the heat generating layer and the heat spreading layer in the main heater.
圖9為說明在主加熱器中之均熱層之一例的缺漏部的說明圖。 Fig. 9 is an explanatory diagram illustrating a missing portion of an example of a thermal layer in the main heater.
圖10為表示使用主加熱器之定影裝置之一例的概略斜視圖。 Fig. 10 is a schematic perspective view showing an example of a fixing device using a main heater.
圖11為表示使用主加熱器之定影裝置之另一例的概略斜視圖。 Fig. 11 is a schematic perspective view showing another example of a fixing device using a main heater.
圖12為表示使用主加熱器之畫像形成裝置之一例的概略圖。 Fig. 12 is a schematic view showing an example of an image forming apparatus using a main heater.
圖13為表示與實施例1至4有關之加熱器所造成的均熱效果的曲線圖。 Fig. 13 is a graph showing the heat equalization effect caused by the heaters related to Examples 1 to 4.
圖14為表示與實施例5至9有關之加熱器所造成的均熱效果的曲線圖。 Fig. 14 is a graph showing the heat equalization effect caused by the heaters related to Examples 5 to 9.
圖15為表示以往之加熱器(比較例1)之的示意性 之剖面圖。 Figure 15 is a schematic diagram showing a conventional heater (Comparative Example 1) 的sectional view.
圖16為示意性表示在均熱層中之金屬多孔部和非金屬部的說明圖。 Fig. 16 is an explanatory diagram schematically showing the metal porous part and the non-metal part in the heat-soaking layer.
圖17為表示均熱層之平面形狀的多種變化的說明圖。 Fig. 17 is an explanatory diagram showing various changes in the planar shape of the heat-soaking layer.
圖18為表示與實施例5至14有關之加熱器所造成的均熱效果的曲線圖。 Fig. 18 is a graph showing the heat equalization effect caused by the heaters related to Examples 5 to 14.
以下,一面參照圖面,一面詳細說明本發明。 Hereinafter, the present invention will be described in detail with reference to the drawings.
[1]加熱器 [1] Heater
主加熱器(1)係在與被加熱物面對面之狀態下,掃掠被加熱物及主加熱器(1)之中之至少一方而加熱被加熱物的加熱器。 The main heater (1) is a heater that sweeps at least one of the object to be heated and the main heater (1) while facing the object to be heated to heat the object.
並且,主加熱器(1)具備基體(11)、被配置在基體(11)之一面(11a)側的發熱層(12)、被配置基體(11)和發熱層(12)之層間,及基體之另一面(11b)側中之至少一方,且藉由熱傳導率大於構成基體之材料而被形成之均熱層(13)(參照圖1~圖4)。 In addition, the main heater (1) is provided with a base (11), a heat generating layer (12) arranged on one side (11a) of the base (11), a layer between the base (11) and the heat generating layer (12), and At least one of the sides of the other side (11b) of the base body has a thermal conductivity layer (13) formed by a material having a higher thermal conductivity than the material constituting the base body (refer to Figures 1 to 4).
(1)針對基體 (1) For the matrix
上述「基體(11)」為指示發熱層的基板。該基體11通常為薄板狀,將其表背之各主面,在本說明書中,
設為一面(11a)及另一面(11b)。即是,一面11a和另一面11b為互相相反的面。
The above-mentioned "base (11)" is a substrate indicating the heating layer. The
構成基體11之材料不特別被限定,若在其表面上使發熱層發熱即可,不特別被限定。例如,可以利用金屬、陶瓷及該些複合材料等。在使用金屬等之導電性材料之情況下,基體可以在其導電性材料上設置絕緣層而構成。
The material constituting the
構成基體之材料中,作為金屬,可以舉出鋼等。就算在該中,在本發明中可以適合使用不鏽鋼。不鏽鋼之種類不特別被限定,以鐵氧體系不鏽鋼、肥粒鐵系不鏽鋼為佳。並且,就算在該些不鏽鋼之中,尤其以耐熱性及耐氧化性優良的品種為佳。例如,可舉出SUS430、SUS436、SUS444、SUS316L等。該些即使僅使用1種亦可,即使合併使用2種以上亦可。 Among the materials constituting the substrate, as metals, steel and the like can be cited. Even in this case, stainless steel can be suitably used in the present invention. The type of stainless steel is not particularly limited, but ferrite-based stainless steel and ferrite-based stainless steel are preferred. Moreover, even among these stainless steels, the ones with excellent heat resistance and oxidation resistance are particularly preferred. For example, SUS430, SUS436, SUS444, SUS316L, etc. can be mentioned. These may use only 1 type, and may use 2 or more types together.
並且,作為構成基體之金屬,可以使用鋁、鎂、銅及該些金屬之合金。該些即使僅使用1種亦可,即使合併使用2種以上亦可。其中,由於鋁、鎂及該些合金(鋁合金、鎂合金、Al-Mg合金等),其比重小,故可以採用該些,以謀求主加熱器之輕量化。再者,銅及其合金由於熱傳導性優良,故藉由採用該些可以謀求主加熱器之均熱性的提升。 In addition, as the metal constituting the base, aluminum, magnesium, copper, and alloys of these metals can be used. These may use only 1 type, and may use 2 or more types together. Among them, aluminum, magnesium, and these alloys (aluminum alloys, magnesium alloys, Al-Mg alloys, etc.) have a small specific gravity, so these can be used to reduce the weight of the main heater. Furthermore, copper and its alloys have excellent thermal conductivity, so by using these, the heat uniformity of the main heater can be improved.
構成基體之材料中,做為陶瓷,可舉出氧化鋁、氮化鋁、氧化鋯、二氧化矽、莫來石、尖晶石、堇青石、氮化矽等。該些即使僅使用1種亦可,即使合併使用2種以上亦可。該些之中,以氧化鋁及氮化鋁為佳。再 者,作為金屬和陶瓷之複合材料,可舉出SiC/C,或SiC/Al等。該些即使僅使用1種亦可,即使合併使用2種以上亦可。 Among the materials constituting the matrix, ceramics include alumina, aluminum nitride, zirconia, silica, mullite, spinel, cordierite, silicon nitride, and the like. These may use only 1 type, and may use 2 or more types together. Among these, alumina and aluminum nitride are preferred. again Furthermore, as a composite material of metal and ceramic, SiC/C or SiC/Al can be cited. These may use only 1 type, and may use 2 or more types together.
雖然基體11之尺寸或形狀不特別被限定,但是其厚度可以設為50μm以上700μm以下。在該範圍下,尤其可以取得省電力,同時快速上升特性。該厚度並且以100μm以上600μm以下為佳,以150μm以上500μm以下為較佳,以180μm以上450μm以下為更佳,200μm以上400μm以下為特佳。
Although the size or shape of the
再者,基體之形狀係寬度方向(D2)之長度較掃掠方向(D1)之長度長之形狀為佳。依此,容易取得本發明之構成所造成的效果。具體而言,例如將基體之掃掠方向(D1)之長度設為LD1,將基體之寬度方向(D2)之長度設為LD2之情況下,長度之比(LD1/LD2)可以設為0.001以上0.25以下。該比並且以0.005以上0.2以下為佳,以0.01以上0.15以下為更佳。 Furthermore, the shape of the substrate is preferably a shape with a length in the width direction (D 2 ) being longer than the length in the sweep direction (D 1 ). According to this, it is easy to obtain the effect caused by the structure of the present invention. Specifically, for example, when the length in the sweep direction (D 1 ) of the substrate is set to L D1 and the length in the width direction (D 2 ) of the substrate is set to L D2 , the ratio of length (L D1 /L D2 ) Can be set to 0.001 or more and 0.25 or less. The ratio is preferably 0.005 or more and 0.2 or less, and more preferably 0.01 or more and 0.15 or less.
(2)針對發熱層 (2) For the heating layer
上述「發熱層(12)」係藉由通電發熱的層,被配置在基體11之一面11a側。發熱層12雖然通常僅被配置在基體11之一面11a側,但是亦可以設置在另一面11b側。
The above-mentioned "heat-generating layer (12)" is a layer that generates heat by energization, and is arranged on the side of one surface 11a of the
該發熱層12之具體性形狀等不特別被限定。例如,即使為全面一樣之厚度的發熱片亦可,即使為具有被設為
一連串之特定圖案形狀的電阻發熱配線亦可。在本發明中,比起該些之上述型態的發熱層,以具備被電性並聯連接的複數之電阻發熱單元之電阻發熱配線為佳。
The specific shape and the like of the
更具體而言,各電阻發熱單元係以連結被配置成相對於掃掠方向(D1)呈略垂直的複數之橫配線部(122),和連接橫配線部(122)間的縱配線部(123)而被形成髮夾彎狀之電阻發熱配線(121)為佳(參照圖8)。 More specifically, each resistance heating unit connects a plurality of horizontal wiring portions (122) arranged to be slightly perpendicular to the sweep direction (D 1 ), and a vertical wiring portion connecting the horizontal wiring portions (122) (123) The resistance heating wiring (121) formed into a hairpin bend is preferable (refer to Fig. 8).
在被圖案製作成如此之髮夾彎狀之電阻發熱配線121之情況下,雖然即使橫配線部122較縱配線部123短亦可,但是以橫配線部122較縱配線部123長為佳。依此,容易取得藉由本發明之構成的效果。即是,在被電性並聯連接的複數之電阻發熱單元之情況下,有在各電阻發熱單元間產生熱的下降之情形,在可以均熱化上為有效用。同樣,即使在沿著掃掠方向(D1)而被配置之縱配線部123之情況下,該縱配線部123所造成的熱累積有變大之傾向,在可以均熱化上為有效用。
In the case of the
從如此之觀點,在具有縱配線部123之情況下,縱配線123以對掃掠方向(D1)傾斜為佳。藉由傾斜,可以擴散1條之縱配線部123所造成的熱累積,可以取得均熱化作用。具體而言,當將被配置成相對於掃描方向(D1)呈0度之情況設為不傾斜之情況時,於傾斜之情況下,可以設為相對於掃掠方向(D1)呈-80度以上80度以下之範圍,以-60度以上60度以下為佳,以-50度以上50度以下為更佳。
From such a viewpoint, when the
在上述之各電阻發熱單元間,熱的下降係在具有被電性並聯連接的複數之電阻發熱單元124的電阻發熱配線中,於相鄰之電阻發熱單元124彼此之間存在不形成電阻發熱配線之非形成部125(尤其,相對於掃掠方向呈交叉之非形成部)之情況下為顯著。在具有如此之非形成部125之電阻發熱配線中,可以更有效果地取得具備均熱層13所造成的均熱作用。作為電阻發熱單元124(電阻發熱配線121)之型態,或非形成部125之型態,例示圖8(a)~(d)。
Among the above-mentioned resistance heating units, the decrease in heat is in the resistance heating wiring with a plurality of
再者,構成發熱層之電阻發熱材料若為藉由可以通電進行因應其電阻值之發熱的材料即可,其種類不特別被限定。例如,可以使用銀、銅、金、鉑、鈀、銠、鎢、鉬、錸(Re)及釕(Ru)等。該些即使僅使用1種亦可,即使合併使用2種以上亦可。在合併使用2種以上之情況下可以設為合金。更具體而言,可以利用銀-鈀合金、銀-鉑合金、鉑-銠合金、銀-釕、銀、銅及金等。 Furthermore, the resistance heating material constituting the heating layer may be a material that can generate heat according to its resistance value by energizing, and its type is not particularly limited. For example, silver, copper, gold, platinum, palladium, rhodium, tungsten, molybdenum, rhenium (Re), ruthenium (Ru), etc. can be used. These may use only 1 type, and may use 2 or more types together. When two or more types are used in combination, it can be an alloy. More specifically, silver-palladium alloy, silver-platinum alloy, platinum-rhodium alloy, silver-ruthenium, silver, copper, gold, etc. can be used.
再者,如上述般,在擁有具備被電性並聯連接的複數之電阻發熱單元之電阻發熱配線之情況下,構成各電阻發熱單元之各電阻發熱配線,雖然具有怎樣的電阻發熱特性亦可,但是以在各電阻發熱單元間,可以發揮自己溫度均衡作用(自己溫度補充作用)為佳。從觀點,構成電阻發熱單元之電阻發熱配線由具有正的電阻發熱係數之電阻發熱材料所形成為佳。具體而言,以在-200℃以上1000℃以下之溫度範圍下的電阻溫度係數為100ppm/℃以 上4400ppm/℃以下之電阻發熱材料為佳,還有,以300ppm/℃以上3700ppm/℃以下之電阻發熱材料為更佳,以500ppm/℃以上3000ppm/℃以下之電阻發熱材料為特佳。作為如此之電阻發熱材料,可舉出銀-鈀合金等之銀系合金。 Furthermore, as described above, in the case of having resistance heating wiring with a plurality of resistance heating units electrically connected in parallel, each resistance heating wiring constituting each resistance heating unit may have any resistance heating characteristics, However, it is better to have its own temperature equalization function (self-temperature supplement function) between the resistance heating units. From a viewpoint, the resistance heating wiring constituting the resistance heating unit is preferably formed of a resistance heating material having a positive resistance heating coefficient. Specifically, the temperature coefficient of resistance in the temperature range above -200℃ and below 1000℃ is 100ppm/℃ The resistance heating material below 4400ppm/℃ is better. In addition, the resistance heating material above 300ppm/℃ and below 3700ppm/℃ is more preferred, and the resistance heating material above 500ppm/℃ and below 3000ppm/℃ is especially preferred. Examples of such resistance heating materials include silver-based alloys such as silver-palladium alloys.
如此一來,使用具有正的電阻溫度係數的電阻發熱材料而形成的電阻發熱配線形成電阻發熱單元,於各個被並聯連接之情況下,該些複數之電阻發熱單元彼此達成自己溫度均衡之作用。即是,例如,在被夾於第1電阻發熱單元和第3電阻發熱單元,具有第2電阻發熱單元之情況下,當第2電阻發熱單元之溫度下降時,第2電阻發熱單元之電阻值下降。如此一來,流入該第2電阻發熱單元之電流增加,瓦數增加,第2電阻發熱單元可以動作成自律地補充溫度下降。 In this way, the resistance heating wire formed by the resistance heating material having a positive temperature coefficient of resistance forms the resistance heating unit, and when each is connected in parallel, the plurality of resistance heating units achieve their own temperature balance with each other. That is, for example, when the second resistance heating unit is sandwiched between the first resistance heating unit and the third resistance heating unit, when the temperature of the second resistance heating unit drops, the resistance value of the second resistance heating unit decline. In this way, the current flowing into the second resistance heating unit increases and the wattage increases, and the second resistance heating unit can operate to supplement the temperature drop autonomously.
各電阻發熱單元彼此係實質上成為相同之發熱量之情況下,若形成各電阻發熱單元實質上成為相同的電阻值即可。在此情況下,電阻發熱單元可以以相同的線長、相同的線寬及相同的厚度,以同樣的電阻發熱配線之圖案來形成。電阻發熱配線之厚度,例如從面積固有電阻之觀點來看,可以設為3μm以上40μm以下。 In the case where the resistance heating units have substantially the same amount of heat generation, the resistance heating units may be formed to have substantially the same resistance value. In this case, the resistance heating unit can be formed with the same line length, the same line width and the same thickness, and the same pattern of the resistance heating wiring. The thickness of the resistance heating wiring can be 3 μm or more and 40 μm or less from the viewpoint of area specific resistance, for example.
另外,實質上具有相同的發熱量係指各電阻發熱單元在相同的測量條件下,具有實質上相同的電阻溫度係數和電阻值之意。例如,可以將在電阻發熱單元間的電阻溫度係數之差異設為±20%以內,並且在電阻發熱單元間的電 阻值之差異設為±10%以內。 In addition, having substantially the same calorific value means that each resistance heating unit has substantially the same resistance temperature coefficient and resistance value under the same measurement conditions. For example, the difference in the resistance temperature coefficient between the resistance heating units can be set to within ±20%, and the electrical resistance between the resistance heating units The difference in resistance is set to within ±10%.
(3)針對絕緣層 (3) For the insulating layer
再者,如上述般,在使用導電性材料當作基體11之情況下,基體11和發熱層12之間需要絕緣。即是,可以具備絕緣層(14)。絕緣層14若可以發揮能夠絕緣從導電性材料所形成之基體11和發熱層12之絕緣性即可,不限定具體性的材料及形狀等。
Furthermore, as described above, when a conductive material is used as the
作為該絕緣層14,可以使用玻璃釉層或陶瓷層。在該些之中,從加工性之觀點來看以玻璃釉層為佳。構成玻璃釉層之玻璃,即使為非晶質亦可,即使為結晶化玻璃亦可,即使為半結晶化玻璃亦可。具體而言,可舉出SiO2-Al2O3-MO系玻璃。在此,MO為鹼土類金屬之氧化物(MgO、CaO、BaO、SrO等)。
As the insulating
再者,絕緣層14例如即使在基體11和發熱層12之間僅具備1層亦可,即使具備2層以上亦可。作為2層以上之情況,可舉出具備不同材質的絕緣層14之情況。
In addition, the insulating
並且,絕緣層14之厚度不特別被限定,例如可以設為10μm以上400μm以下。尤其,在基體11由導電性材料(不鏽鋼等)所形成之情況下,絕緣層14承擔基體11和發熱層12的絕緣。在此情況下,在被配置基體11和發熱層12之間的絕緣層14之厚度((介入存在兩層以上不同的材質之絕緣層14之情況下,該些絕緣層14之合計厚度)),以20μm以上300μm以下為佳,以30μm以上
200μm以下為更佳,以40μm以上100μm以下為特佳。
In addition, the thickness of the insulating
另外,例如,在圖1中,被配置在基體11和發熱層12之間的絕緣層14為絕緣層141。因此,上述厚度能夠適用於絕緣層141之厚度。
In addition, for example, in FIG. 1, the insulating
另外,在不以絕緣為目的,當作玻璃釉層之使用中,玻璃釉層之厚度(不介插其他層而藉由燒結被一體化之玻璃釉層全體之厚度)可以設為例如1μm以上500μm以下。該厚度以2μm以上400μm以下為佳,以3μm以上300μm以下為更佳,以4μm以上200μm以下為特佳。具體而言,例如在圖1中,較發熱層12,被配置在加熱器之一面1a側的玻璃釉層142及143為不以絕緣為目的的玻璃釉層。再者,在圖1中,較均熱層13,被配置在加熱器之另一面1b側的玻璃釉層141、142及143為不以絕緣為目的的玻璃釉層。
In addition, when used as a glass glaze layer not for the purpose of insulation, the thickness of the glass glaze layer (the thickness of the entire glass glaze layer integrated by sintering without interposing other layers) can be set to, for example, 1 μm or more Below 500μm. The thickness is preferably 2 μm or more and 400 μm or less, more preferably 3 μm or more and 300 μm or less, and particularly preferably 4 μm or more and 200 μm or less. Specifically, for example, in FIG. 1, the glass glaze layers 142 and 143 arranged on the side of the heater surface 1a compared to the
(4)針對均熱層 (4) For the soaking layer
上述「均熱層(13)」係被配置在基體11和發熱層12之層間,及基體之另一面11b側中之至少一方的層,藉由熱傳導率大於構成基體11之材料的材料所形成的層。
The above-mentioned "heating layer (13)" is a layer arranged between the base 11 and the
該均熱層13具有使在發熱層12形成之熱的起伏均勻的作用。即是,在具有加熱溫度之下降之情況下,可以使升溫至與其周圍同等之溫度,於具有加熱溫度之突出之情況下,降溫至與其周圍同等之溫度,可以使熱的起伏均
勻。尤其,發熱層12係在使用具有特定圖案形狀之電阻發熱配線而形成之情況下,適合用以使因該圖案形狀而產生之熱的起伏均勻。即是,藉由具有圖案形狀,產生存在電阻發熱配線之部位,和不存在之部位,形成存在電阻發熱配置之部位的溫度比不存在的部位高這樣之熱的起伏。如此之熱的起伏藉由通過均熱層13均勻,可以縮小溫度差。從如此之觀點,設置均熱層13,作為發熱層12,在具備被電性並聯連接的複數之電阻發熱單元121之加熱器中具有效果。
The
因此,均熱層13至少被配置在基體11和發熱層12之層間,及基體11之另一面11b側(成為與被加熱物之表面側)中之至少一方。即是,被配置在較發熱層12,接近加熱面(成為與被加熱物接合之表面)之側。另外,當然亦可以合併配置在較發熱層12,接近於非加熱面(不與被加熱物相接之表面)之側。
Therefore, the
均熱層13若藉由熱傳導率大於構成基體11之材料的材料而形成即可。具體而言,例如在將熱傳導率為50W/mK以下之低熱傳導性的不鏽鋼設為基體11之情況下,以將熱傳導率為100W/mK以上之材料當作均熱層13之材料使用為佳。具體而言,可以將銀、銅、金、鋁、鎢、鎳等,或包含該些金屬中之至少1種的合金當作熱傳導金屬使用。該些熱傳導性金屬即使僅使用1種亦可,即使合併使用2種以上亦可。即使在該些之中,以銀、銅、鋁及包含該些之中之至少1種的合金為佳。
The
再者,例如,即使在將熱傳導率為50W/mK以下之低熱傳導性的鋁等之陶瓷設為基體11之情況下,以將熱傳導率為100W/mK以上之材料當作均熱層13之材料使用為佳。具體而言,除了可以利用氮化鋁等之熱傳導性陶瓷之外,可以使用上述之各種熱傳導性金屬。
Furthermore, for example, even when ceramics such as aluminum with a thermal conductivity of less than 50 W/mK and low thermal conductivity are used as the
均熱層13即使形成怎樣亦可。具體而言,作為鍍敷層(無電解鍍敷層、電場鍍敷層、該些的複合鍍敷層等),可以設置均熱層13。再者,在印刷包含熱傳導性材料之糊料之後,利用燒結其印刷塗膜,可以形成均熱層13。例如,作為熱傳導性材料,可以利用包含金屬粒子(金屬粉末)之印刷糊料。在此情況下,印刷糊料除了金屬粒子以外,亦可以包含用以糊料化之載劑,或作為相同質地之玻璃成份或陶瓷成份。
The
燒結如此之印刷糊料而取得的均熱層13,例如能得到具有圖16(a)及圖16(b)所示的複數之金屬粒子相連而被形成的金屬多孔部135a,和被配置在金屬多孔部135a之間隙的非金屬部135b之均熱層13。再者,在圖16中,圖16(a)表示複數之金屬粒子互相接合而相連的金屬多孔部135a,圖16(b)表示複數之金屬粒子彼此藉由燒結互相融合而相連的金屬多孔部135a。在本發明之加熱器1中,雖然均熱層13即使呈圖16(a)之型態亦可,即使呈圖16(b)之型態亦可,即使為複合性地具有該些雙方之型態亦可,但是以具有圖16(b)之型態為佳。即是,均熱層13以具有複數之金屬粒
子互相融合而相連的金屬多孔部135a為佳。在該型態中,可以取得更高的熱傳導。
The soaking
另外,非金屬部135b係藉由玻璃成份或陶瓷成份(包含陶瓷及玻璃陶瓷)而被形成。即是,在本發明之加熱器1中之均熱層13具有非金屬部135b之情況下,非金屬部135b可以僅由玻璃,或是玻璃及陶瓷所構成。
In addition, the non-metal portion 135b is formed of a glass component or a ceramic component (including ceramics and glass ceramics). That is, in the case where the
在具有金屬多孔部135a及非金屬部135b之情況,將該些合計設為100質量%之情況(尤其,金屬多孔部135a為銀,非金屬部135b為玻璃之情況)下,非金屬部135b之比率不特別被限定,但是以0.1質量%以上為佳。藉由具有如此之非金屬部135b,可以使均熱層13介入存在,而一面提升其一面側之鄰接層,和另一面側之鄰接層的接合性,一面取得優良的均熱性。再者,非金屬部135b通常設為20質量%以下為佳。該比率並且以0.2質量%以上15質量%以下為佳,以0.5質量%以上12質量%以下為更佳。
In the case of the porous metal part 135a and the non-metal part 135b, the total of these is 100% by mass (especially, when the porous metal part 135a is silver and the non-metal part 135b is glass), the non-metal part 135b The ratio is not particularly limited, but it is preferably 0.1% by mass or more. By having such a non-metal portion 135b, the
均熱層13如上述般,若配置在基體11和發熱層12之層間,及基體之另一面11b側之中之至少一方即可。因此,作為均熱層13,例如可出下述(1)之直接積層型之均熱層(131),和下述(2)之間接積層型之均熱層(132)的兩個型態。
As described above, the
(1)直接積層型之均熱層131為直接被積層於基體11的均熱層13。該直接積層型之均熱層131不使絕緣層14等之其他層介於基體11和均熱層13之層間而被積
層。
(1) The direct build-up type
(2)間接積層型之均熱層132係使其他層介於基體11和均熱層13之間而被積層。作為其他層,具體而言,可舉出玻璃釉層(絕緣層14)。
(2) The indirect laminated type
該些直接積層型之均熱層131,和間接積層型之均熱層132,在一個加熱器中,即使僅具有其中之一方亦可,即使具備該些之雙方亦可。
The direct build-up type
作為直接積層型之均熱層131之情況,可舉出僅在基體11之一面(11a)具備的型態,僅在基體11之另一面(11b)之型態,在基體11之一面(11a)及另一面(11b)之雙面具備的型態。在該些之中,以僅在基體11之一面(11a)具備的型態,或在基體11之一面(11a)及另一面(11b)之雙面具備的型態為佳。
As the case of the direct build-up type
雖然該直接積層型之均熱層131之層厚不特別被限定,但是在將均熱層(13、131)之厚度設為D1,將基體11之厚度設為D2之情況下,D1和D2之比D1/D2以0.6以下為佳。該比並且以0.001以上0.6以下為更佳,以0.005以上0.57以下為更佳,以0.008以上0.53以下為又更佳,以0.01以上0.50以下為特佳。更具體而言,直接積層型之均熱層131之層厚以1μm以上250μm以下為佳,以1μm以上150μm以下為更佳,以2μm以上120μm以下為更佳,以3μm以上60μm以下為又更佳,以3μm以上40μm以下為特佳,以3μm以上30μm以下為更特佳。
Although the layer thickness of the direct build-up type
再者,上述中,在兩面具備的型態中,即使各直接積
層型之均熱層131分別為相同的厚度亦可,不同的厚度亦可。並且,即使為相同的形狀(圖案形狀等)亦可,即使為不同的形狀亦可。
Furthermore, in the above, in the two-sided type, even if each direct product
The layer-type heat-dissipating
另外,作為間接積層型之均熱層132之情況,可舉出僅在基體11之一面(11a)側具備的型態,僅在基體11之另一面(11b)側之型態,在基體11之一面(11a)側及另一面(11b)之雙面側具備的型態。在該些之中,以僅在基體11之一面(11a)具備的型態為佳。間接積層型之均熱層132比起直接積層型之均熱層131,設置在基板11之另一面(11b)所造成的對加熱器1全體的均熱效果低之故。
In addition, as the case of the indirect laminated type
雖然該間接積層型之均熱層132之層厚不特別被限定,但是在將均熱層(13、132)之厚度設為D1,將基體11之厚度設為D2之情況下,D1和D2之比D1/D2以0.6以下為佳。該比並且以0.001以上0.6以下為更佳,以0.005以上0.57以下為更佳,以0.008以上0.53以下為又更佳,以0.01以上0.50以下為特佳。更具體而言,間接積層型之均熱層132之層厚以1μm以上250μm以下為佳,以1μm以上150μm以下為更佳,以2μm以上120μm以下為更佳,以3μm以上60μm以下為又更佳,以3μm以上40μm以下為特佳,以3μm以上30μm以下為更特佳。
Although the layer thickness of the indirect laminated type
再者,間接積層型之均熱層132即使在一個加熱器1中具備任何層亦可。即是,即使具備1層亦可,即使具備2層以上亦可。通常,雖然藉由具備更多的層
數,能取得更高的均熱性,但是間接積層型之均熱層132之層數的過度增加,從加熱器1之耐熱衝擊,或翹曲防止之觀點來看為不理想。因此,以1層以上10層以下為佳,以1層以上5層以下為更佳,以1層以上3層以下為特佳。在具備2層以上的間接積層型之均熱層132之情況下,各個的均熱層13即使為相同厚度亦可,即使為不同的厚度亦可。並且,即使為相同的形狀(圖案形狀等)亦可,即使為不同的形狀亦可。
In addition, the indirect laminated type
尤其,在基體11為厚度100μm以上600μm以下之不鏽鋼基體(不鏽鋼製之基體)之情況下,均熱層13藉由將其合計厚度抑制成60μm以下(還有,30μm以下),可以有效果地防止加熱器全體之翹曲,同時可以以均熱作用優良的範圍之層厚予以利用。
In particular, when the
另外,從均熱化之觀點來看,均熱層13之厚度較厚之一方容易取得效果,例如,在基體11之另一面11b側,設置有合計厚度超過30μm之均熱層13之情況下,在基體11之一面11a側(尤其,基體11和發熱層12之層間為佳),將相同的厚度之均熱層13設置成對稱配置而可以防止加熱器全體之翹曲。並且,在難以設置相同的厚度之均熱層13之情況下,相對於被設置在基體11之另一面11b側之均熱層13之合計厚度,將成為25%以上95%以下之厚度比率的均熱層13,設置在基體11之一面11a側(尤其,以基體11和發熱層12之層間為佳),依此可以充分抑制加熱器全體之翹曲。上述厚度比率係以
30%以上92%以下為佳,以35%以上88%以下為更佳,以40%以上85%以下為特佳(參照圖7)。
In addition, from the viewpoint of soaking, the thicker thickness of the soaking
另外,均熱層13之厚度較厚之一方容易取得效果,但是有即使過度增大厚度,相對於厚度之增加部分,所取得之均熱作用亦變小之傾向。因此,例如相對於基體11為厚度100μm以上600μm以下之不鏽鋼基體,均熱層13之合計層厚如上述般以250μm以下為佳。
In addition, if the thickness of the soaking
在主加熱器1中,當比較直接積層型之均熱層131,和間接積層型之均熱層132時,有表示直接積層型之均熱層131之一方顯示較高的均熱性之傾向。因此,在本發明之加熱器1中,以具備有直接積層型之均熱層131為佳。
In the
再者,在主加熱器1中,具備直接積層型之均熱層131,還有具備間接積層型之均熱層132之情況下,相對於直接積層型之均熱層131,間接積層型之均熱層132以配置在更接近於加熱面之側為佳。
Furthermore, in the case where the
尤其,在以導電性材料設為基體材料之加熱器1(例如,不鏽鋼基板)中,需要絕緣基體11和發熱層12,設置絕緣層14。絕緣層14可以藉由玻璃釉形成。而且,在設置如此之絕緣層14之情況下,因相對於基體11,設置成在表背成為均等之配置及厚度,依此防止加熱器1全體之翹曲,故即使在基體11和發熱層12之層間以外,亦不以絕緣為目的,以防止翹曲之目的,設置絕緣層14之情形為多。如此之絕緣層14通常係熱傳導性低的材
料,例如玻璃釉之熱傳導率為5W/mK以下。因此,在主加熱器1中,設置間接積層型之均熱層132這樣係成為在熱傳導性低之絕緣層14(即使非以絕緣為目的之層亦可)之層間設置均熱層13,從取得均熱效果之觀點來看為佳。
In particular, in the heater 1 (for example, a stainless steel substrate) using a conductive material as a base material, an insulating
並且,雖然如上述般,具有在間接積層型之均熱層132,藉由玻璃釉層(絕緣層14)覆蓋表面及背面,以作為均熱層13的型態,但是在該情況下,可以設為在間接積層型之均熱層132設置缺漏部(133X)(參照圖8(a)及圖9),使經由該缺漏部133X,覆蓋間接積層型之均熱層132之表面的玻璃釉層(絕緣層14),和覆蓋間接積層型之均熱層132之背面的玻璃釉層(絕緣層14)融合之型態。藉由如此地使玻璃釉層在表背融合,可以提升在具備加熱器1之間接積層型之均熱層132之層間的接合性,同時可以提升加熱器1之耐熱衝擊性及翹曲防止性。
In addition, although as described above, there is an indirect build-up type of soaking
作為上述缺漏部133X,可舉出切口(133S),或在貫通表背之貫通孔(133H)(參照圖8(a)及圖9)。該些即使僅具有一方亦可,即使具有雙方亦可。再者,在具備有缺漏部133X之情況下,以該缺漏部133X被配置在熱起伏較小之處為佳。即是,因藉由設置缺漏部133X,該部位之均熱性比其他部位下降,故該處以配置在發熱層12所造成的溫度差小之位置為佳。
Examples of the missing portion 133X include a cutout (133S) or a through hole (133H) penetrating the front and back (see Fig. 8(a) and Fig. 9). These may have only one side, and may have both sides. Furthermore, in the case where the missing portion 133X is provided, it is preferable that the missing portion 133X is arranged in a place where the thermal fluctuation is small. That is, by providing the missing part 133X, the heat uniformity of this part is lower than that of other parts, so it is better to arrange the part where the temperature difference caused by the
更具體而言,在具備發熱層12被電性並聯連接的複
數之電阻發熱單元之情況下,以在各電阻發熱單元間配置缺漏部133X為佳(參照圖8(a))。再者,在電阻發熱單元具有被配置成相對掃掠方向(D1)呈略垂直的複數之橫配線部,和連接橫配線部間的縱配線部,連結橫配線部122及縱配線部123而被形成髮夾彎狀之電阻發熱配線121之情況下,以避開對應的縱配線部123而配置缺漏部133X為佳。即是,在俯視觀看加熱器1之情況下,以配置成縱配線部123之投影像,和缺漏部133X之投影像不重疊為佳(參照圖8(a))。並且,若換言之,以縱配線部123之投影像與均熱層13之實在部重疊為佳。
More specifically, when a plurality of resistance heating units in which the
再者,當然與具有上述般之缺漏部133X(包含切口133S及貫通孔133H)之均熱層13,為直接積層型之均熱層131,或間接積層型之均熱層132並無關係,即使哪一個的均熱層13均有效果。即是,在均熱層13具有缺漏部133之情況下,隔著缺口部133接合與均熱層之一面側鄰接之層,和與均熱層之另一面側鄰接之層,可以取得更高耐久性的加熱器1。具體而言,在間接積層型之均熱層132之情況下,如上述般,與均熱層之一面側鄰接之層,還有與均熱層之另一面側鄰接之層,皆為玻璃釉層,該些玻璃釉層彼此被接合。再者,為直接積層型之均熱層131之情況,且基板11為不鏽鋼基板之情況下,與均熱層之一面側鄰接之層為不鏽鋼基板,可以將與均熱層之另一面側鄰接之層設為玻璃釉層。在此情況下,可以取得不鏽鋼基板和玻璃釉層之緊固的接合。
Furthermore, of course, it has nothing to do with the direct build-up
在主加熱器1中,不管均熱層13係直接積層型的均熱層131,或間接積層型之均熱層132,可以具有圖案製作(即是,具有缺漏部133X之平面形狀)。具體而言,均熱層13可以以非連續的層來配置。例如,在特定之層間中,僅在熱起伏大之處配置補片(均熱層13之一部分),熱起伏小之處設為缺漏部133X(參照圖8(a))。並且,在特定之層間,可以增厚熱起伏大之處的均熱層13之厚度,將熱起伏小之處的均熱層13之厚度形成相對性較薄。
In the
並且,構成具有缺漏部133X之俯視形狀的均熱層13之具體性形狀不被限定,除圖8(a)及圖9以外,可以例示圖17(b)~(g)等(圖17(a)例示不具有缺漏部133X之平面形狀)。
In addition, the specific shape of the
即是,圖17(b)係以被各個片化成圓點花紋般之均熱層片的集合體,形成均熱層13的型態,具有連續的缺漏部133X,以作為各均熱層片之間隙。再者,圖17(c)及圖17(d)係被圖案製作成朝窄寬度方向(掃掠方向)的面積率一致的均熱層13。其中,圖17(c)具有長方形狀之貫通孔133H,和長方形狀之缺漏部133S,以作為缺漏部133X。另外,圖17(d)係以被各個片化成長方形狀之均熱層片的集合體,形成均熱層13的型態,具有以各均熱層片之間隙而連續的缺漏部133X。
That is, Fig. 17(b) is an assembly of the soaking layer sheets that are converted into a polka dot pattern by each sheet to form the type of the soaking
並且,圖17(e)~(g)中之任一者皆以被各個片化成條紋形狀之均熱層片的集合體,形成均熱層
13的型態,具有對應的條紋狀之缺漏部133X,以作為各均熱層片之間隙。其中,圖17(e)係沿著長邊方向之(與掃掠方向正交)之條紋形狀之均熱層13。再者,圖17(f)係在長邊方向還有寬度方向傾斜成交差(在掃掠方向傾斜)的條紋形狀之均熱層13。並且,圖17(g)係沿著寬度方向(與長邊方向,且沿著掃掠方向)之條紋形狀的均熱層13。另外,在該些的條紋形狀之均熱層13中,因應所需,可以設在條紋寬度或缺漏部133X之寬度,設置粗密。
In addition, any one of Fig. 17(e)~(g) is an assembly of soaking layer sheets that are each sliced into a stripe shape to form a soaking layer
The
(5)針對其他之層 (5) For other layers
在本發明之加熱器1中,除了基體11、發熱層12、均熱層13及絕緣層14以外,可以具備其他層。作為其他層,可以舉出以釉玻璃所構成的外塗層、以聚醯亞胺膜所構成之外塗層(聚醯亞胺層)、於特定以上之高溫時熔融而可以切斷朝發熱層12之通電的自己通電切斷層(適用日本特開2002-359059號所記載之技術)等。其中,上述外塗層係可以在以提升滑動面之耐久性(耐磨耗性),或提高潔淨性之目的下利用。該些層即使僅使用1種亦可,即使合併使用2種以上亦可。
In the
(6)針對加熱器之加熱面 (6) For the heating surface of the heater
在本加熱器1中,加熱面即使相對於基體11被配置在一面11a側亦可,即使被配置在另一面11b側亦可,還
有,即使被配置在該些兩面之側亦可。即是,雖然即使用任何面而加熱被加熱物亦可,但是以將基體11之另一面11b側的表面設為被加熱物之對向面為佳。即是,發熱層12係將夾著基體11而相反側的面設為與被加熱物的對向面為佳。如此一來,藉由配置加熱面,可以更容易取得具備均熱層13所造成的均熱效果。
In this
另外,基體11即使為平板形狀亦可,亦可以設為彎曲形狀。即是,在加熱器1之加熱面和被加熱物面對面之狀態中,使被加熱物和加熱器相對性掃掠而加熱被加熱物之情況下,基體11之掃掠方向(D1)之剖面形狀,可以設為以與掃掠方向(D1)正交之軸為中心而在與被加熱物對面側呈凸狀之圓弧形狀(即是,在與中心軸平行之平面切下圓柱或圓筒的形狀)。藉由設為如此之形狀,可以在圓筒狀之輥安裝加熱器1,藉由使輥旋轉,可以有效率地加熱在輥上被掃掠之被加熱物。
In addition, the
(7)針對用途 (7) For purpose
本加熱器1係組裝於印刷機、影印機、傳真機等之畫像形成裝置或定影裝置等,可以作為將碳粉或油墨等定影在記錄媒體之定影用加熱器而利用。再者,可以當作被組裝於加熱機,而均勻地加熱(乾燥或燒結等)面板等之被處理體的加熱裝置而利用。其他,可以適合進行金屬製品之熱處理、被形成在各種形狀之基體的塗膜、覆膜之熱處理等。具體而言,可以利用平面顯示器用之塗膜(過濾器
構成材料)之熱處理、被塗裝之金屬製品、汽車關連製品、木工製品等之塗裝乾燥、靜電植毛接著乾燥、塑膠加工製品之熱處理、印刷基板之焊料回流、厚膜積體電路之印刷乾燥等。
The
[2]定影裝置 [2] Fixing device
具備本加熱器1之定影裝置可以設為藉由加熱對象或定影手段等,被適當選擇的構成。例如,在具備伴隨著壓接的定影手段,在紙等之記錄用媒體定影碳粉等之情況,或貼合複數之構件之情況,可以設為具備加熱器之加熱部,和加壓部的定影裝置。當然,亦可以設為不伴隨著壓接的定影手段。在本發明中,以使包含被形成在紙、薄膜等之記錄用媒體之表面的碳粉之未定影畫像,定影在記錄用媒體之定影裝置5為佳。
The fixing device provided with the
圖10表示被配設在電子照片方式之畫像形成裝置的定影裝置5之重要部分。定影裝置5具備能夠旋轉之定影用輥51,和能夠旋轉之加壓用輥54,加熱器1被配設在定影用輥51之內部。加熱器1理想上被配設成接近定影用輥51之內表面。
FIG. 10 shows the important part of the fixing
加熱器1可以設為例如圖12所示之定影手段5般,被固定在由能夠傳導加熱器1發出之熱的材料所構成之加熱器保持器53之內部,而可以將加熱器1之發熱從定影用輥51之內側傳到外表面的構造。
The
圖11也又表示被配設在電子照片方式之畫像
形成裝置的定影裝置5之重要部分。定影裝置5具備能夠旋轉之定影用輥51,和能夠旋轉之加壓用輥54,將熱傳達至定影用輥51之加熱器1,及與加壓用輥54同時壓接記錄用媒體之加壓用輥52被配設在定影用輥51之內部。加熱器1被配設成沿著定影用輥51之圓筒面。
Figure 11 also shows the portrait that is placed in the electronic photo method
An important part of the fixing
在圖10或圖11所示之定影裝置5中,藉由從無圖示之電源裝置施加電壓使加熱器1發熱,其熱被傳達至定影用輥51。而且,在表面具有未定影之碳粉畫像之記錄用媒體被供給至定影用輥51和加壓用輥54之間時,在定影用輥51及加壓用輥54之壓接部,碳粉熔融而形成定影畫像。因具有定影用輥51及加壓用輥54之壓接部,故伴隨著旋轉。如上述般,因加熱器1被抑制在使用小的記錄用媒體之時容易產生的局部性的溫度上升,故難以產生在定影用輥51的溫度不均,可以均勻進行定影。
In the
作為具備主加熱器1之定影裝置之其他態樣,可以設為具備上模及下膜的模具,且在上模及下模之至少一方的內部配設加熱器的態樣。
As another aspect of the fixing device provided with the
具備主加熱器1之定影裝置係以電子照片方向之印刷機、影印機等之畫像形成裝置為首,安裝在家庭用之電氣製品、業務用、實驗用之精密機器等,而作為加熱、保溫等之熱源為佳。
The fixing device equipped with the
[3]畫像形成裝置 [3] Image forming device
具備本加熱器1之畫像形成裝置可以設為藉由加熱對
象或加熱目的等,被適當選擇的構成。在本發明中,如圖12所示般,以具備在紙、薄膜等之記錄用媒體之表面形成未定影畫像之作像手段,和使未定影畫像定影在記錄用媒體之定影手段5,且定影手段5具備主加熱器1的畫像形成裝置4為佳。畫像形成裝置4除上述手段之外,可以具備記錄用媒體搬運手段,或用以控制各手段之控制手段而構成。
The image forming device equipped with this
圖12為表示電子照片方式之畫像形成裝置4之主要部分的概略圖。作為作像手段,即使為具備轉印滾筒之方式及不具備轉印滾筒之方式中之任一者皆可,圖12為具備轉印滾筒之態樣。
FIG. 12 is a schematic diagram showing the main part of the
在作像手段中,一面旋轉,一面在藉由帶電裝置43被帶電處理成特定之電位的感光滾筒44之帶電處理面,照射從雷射掃描器41被輸出的雷射,藉由從顯像器45被供給之碳粉,形成靜電潛像。接著,利用電位差,在與感光滾筒44連動之轉印滾筒46之表面,轉印碳粉畫像。之後,被供給至轉印滾筒46及轉印用輥47之間的記錄用媒體之表面,被轉印碳粉畫像,能取得具有未定影畫像之記錄用媒體。碳粉係包含黏結樹脂和著色劑和添加劑的粒子,黏結樹脂之熔融溫度通常為90℃~250℃。並且,可以在感光滾筒44及轉印滾筒46之表面,具備用以除去不溶的碳粉等之清掃裝置。
In the imaging means, while rotating, the charging treatment surface of the
定影手段5可以設為與上述定影裝置5同樣的構成,具備有加壓用輥54,和在內部具備保持進紙方
向通電型之加熱器1的加熱器保持器53,與加壓用輥54連動之定影用輥51。具有來自作像手段之未定影畫像的記錄用媒體,被供給至定影用輥51及加壓用輥54之間。定影用輥51之熱熔融記錄用媒體之碳粉畫像,並且,熔融的碳粉在定影用輥51和加壓用輥54之壓接部被加壓,碳粉畫像被定影在記錄用媒體。在圖12之定影手段5中,即使為具備接近於加熱器1而配置的定影用皮帶,以取代定影用輥51之態樣亦可。
The fixing means 5 can have the same structure as the above-mentioned
一般而言,定影用輥51之溫度成為不均勻,於被供給至碳粉之熱量過小之情況下,碳粉從記錄用媒體剝離,另外,在熱量過大之情況下,有碳粉附著於定影用輥51,定影用輥51一圈再附著於記錄用媒體之情形。若藉由具備本發明之加熱器的定影手段5時,由於迅速地被調整成特定之溫度,故可以抑制不良因素。 Generally speaking, the temperature of the fixing roller 51 becomes uneven, and when the amount of heat supplied to the toner is too small, the toner is peeled from the recording medium, and when the heat is too large, the toner adheres to the fixing When the roller 51 and the fixing roller 51 are attached to the recording medium once again. If the fixing means 5 equipped with the heater of the present invention is used, the temperature can be quickly adjusted to a specific temperature, so that the undesirable factors can be suppressed.
本發明之畫像形成裝置於使用時抑制非進紙區域之過升溫,以作為電子照片方式之印刷機、影印機為適合。 The image forming device of the present invention suppresses the overheating of the non-paper feeding area when in use, and is suitable as a printer or photocopier of the electronic photograph method.
[4]加熱裝置 [4] Heating device
具備本加熱器之加熱裝置可以設為藉由加熱對象之大小或形狀等,被適當選擇的構成。在本發明中,可以具備例如框體部,和為了被熱處理物之進出等而被配置之能密閉的窗部,和被配置在框體部之內部的能移動的加熱器部而構成。因應所需,可以在框體部之內部,具備配置被熱處理物之被熱處理物設置部、藉由被熱處理物之加熱排出 氣體之情況,排出該氣體的排氣部、調整框體部之內部之壓力的真空泵等之壓力調整部等。再者,加熱即使在固定被熱處理物及加熱器部之狀態下進行亦可,即使一面使任一方移動一面進行亦可。 The heating device equipped with this heater can be configured to be appropriately selected according to the size or shape of the heating target. In the present invention, for example, a frame portion, a window portion that can be hermetically arranged for in and out of the heat-treated object, and a movable heater portion arranged inside the frame portion may be provided. According to the needs, it can be equipped with a setting part of the heat-treated object inside the frame part, and the heat-treated object can be discharged by the heating of the heat-treated object. In the case of gas, pressure regulators such as an exhaust part that discharges the gas, a vacuum pump that regulates the internal pressure of the frame body, etc. In addition, heating may be performed even in a state in which the object to be heat-treated and the heater portion are fixed, and it may be performed while moving either side.
主加熱裝置以在期望之溫度進行包含水、有機溶劑之被熱處理物之乾燥的裝置為適合。而且,可以當作真空乾燥機(減壓乾燥機)、加壓乾燥機、除濕乾燥機、熱風乾燥機、防爆型乾燥機等使用。再者,以作為在期望之溫度進行LCD面板、有機EL面板等之未燒結物之燒結的裝置為適合。而且,可以當作減壓燒結機、加壓燒結機等使用。 The main heating device is suitable for drying the heat-treated object containing water and an organic solvent at a desired temperature. Furthermore, it can be used as a vacuum dryer (decompression dryer), pressure dryer, dehumidifying dryer, hot air dryer, explosion-proof dryer, etc. Furthermore, it is suitable as a device for sintering green objects such as LCD panels and organic EL panels at a desired temperature. Moreover, it can be used as a vacuum sintering machine, a pressure sintering machine, and the like.
在以下中,使用實施例說明本發明。 In the following, examples are used to illustrate the present invention.
[1]加熱器之製作 [1] The production of heater
藉由下述要領,製作實施例1~4及比較例1之加熱器。 The heaters of Examples 1 to 4 and Comparative Example 1 were produced according to the following procedures.
(1)實施例1之加熱器(參照圖1) (1) The heater of Example 1 (refer to Figure 1)
將厚度300μm之不鏽鋼薄膜(SUS430,熱傳導率26W/mK)設為基體11。
A stainless steel thin film (SUS430, thermal conductivity of 26 W/mK) with a thickness of 300 μm was used as the
在該基體11之另一面11b側之表面,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(直接積層型之均熱層131)。
The surface on the
接著,將絕緣玻璃糊料塗佈在基體11之一面11a側
之表面,及均熱層13之表面之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
Then, the insulating glass paste is coated on the side of one surface 11a of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層12包含Ag-Pd,藉由具有正的電阻發熱係數的電阻發熱配線,即具備被電性並聯連接的複數之電阻發熱單元,且各電阻發熱單元係連結被配置成相對於掃掠方向呈略垂直的複數之橫配線部,和連接該橫配線部間之縱配線部而被形成髮夾彎狀之電阻發熱配線121而被形成。另外,該發熱層12除電阻發熱配線121以外,具有用以進行朝電阻發熱配線121供電的供電銲墊及供電用配線(無圖示)。該些供電銲墊及供電用配線係在藉由銀糊料於電阻發熱配線121之形成前後藉由網版印刷及燒結而形成。
The surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之另一面11b側之絕緣層141之表面,和露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the surface of the insulating
接著,將絕緣玻璃糊料塗佈在露出於基體11之一面11a側之絕緣層142,和露出於基體11之另一面11b側之絕緣層142之表面之後,進行燒結,而形成厚度20μm之玻璃釉層(絕緣層143),取得實施例1(圖1)之加熱器1。
Next, the insulating glass paste is coated on the insulating
(2)實施例2之加熱器(參照圖2) (2) The heater of Example 2 (refer to Figure 2)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之一面11a側之表面,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(直接積層型之均熱層131)。
After coating the silver paste on the surface of the
接著,將絕緣玻璃糊料塗佈在基體11之另一面11b側之表面,及均熱層13之表面之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
Next, the insulating glass paste is applied on the surface of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層12與實施例1相同。
The surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之另一面11b側之絕緣層141之表面,和露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the surface of the insulating
接著,使與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143),而取得實施例2(圖2)之加熱器1。
Next, as in Example 1, a glass glaze layer (insulating layer 143) with a thickness of 20 μm was formed, and the
(3)實施例3之加熱器(參照圖3) (3) The heater of Example 3 (refer to Figure 3)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之一面11a側之表面,及另一面11b側
之表面之兩表面,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(直接積層型之均熱層131)。
On the surface of the base 11 on the side of one side 11a and on the side of the
接著,將絕緣玻璃糊料塗佈在基體11之一面11a側,及另一面11b側面之各個均熱層13之表面之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
Next, the insulating glass paste is coated on the surface of each heat-soaking
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層12與實施例1相同。
The surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之另一面11b側之絕緣層141之表面,和露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the surface of the insulating
接著,使與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143),而取得實施例3(圖3)之加熱器1。
Next, as in Example 1, a glass glaze layer (insulating layer 143) with a thickness of 20 μm was formed, and the
(4)實施例4之加熱器(參照圖4) (4) The heater of Example 4 (refer to Figure 4)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之另一面11b側之表面,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(直接積層型之均熱層131)。
The surface on the
接著,將絕緣玻璃糊料塗佈在基體11之一面11a側之表面,及均熱層13之表面之後,進行燒結,而形成厚
度75μm之玻璃釉層(絕緣層141)。
Next, the insulating glass paste is applied to the surface of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層12與實施例1相同。
The surface of the insulating
之後,在露出於基體11之另一面11b側之絕緣層141之表面,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(間接積層型之均熱層132)。
After that, the surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於間接積層型之均熱層132之表面,和露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is coated on the surface of the indirect laminated type heat-soaking
接著,使與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143),而取得實施例4(圖4)之加熱器1。
Next, as in Example 1, a glass glaze layer (insulating layer 143) having a thickness of 20 μm was formed, and the
(5)比較例1之加熱器(參照圖15) (5) The heater of Comparative Example 1 (refer to Figure 15)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之一面11a側之表面,及另一面11b側面之表面之兩表面,塗佈絕緣玻璃糊料之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
The insulating glass paste is coated on the surface of one side 11a of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層
12與實施例1相同。
The surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面,和露出於基體11之另一面11b側之絕緣層141之表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the two surfaces of the insulating
接著,使與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143),而取得比較例1(圖15)之加熱器。 Next, as in Example 1, a glass glaze layer (insulating layer 143) with a thickness of 20 μm was formed to obtain a heater of Comparative Example 1 (FIG. 15).
[2]均熱層之效果的確認 [2] Confirmation of the effect of the soaking layer
對在上述[1]所取得之實施例1~4及比較例1之加熱器之各個,施加交流45V之電壓,在各加熱器1之表面之最高溫度到達至260℃之時點,利用紅外線熱像儀(NEC Avio紅外線科技股份有限公司製造,型式「TH9100MR」),一起取得各加熱器1全體之溫度資料。之後,從所取得之資料,拾取各加熱器1之掃掠方向(D1)之寬度中央部中之溫度資料,而予以圖形化,算出該圖形中之最高溫度和最低溫度之溫度差。
To each of the heaters of Examples 1 to 4 and Comparative Example 1 obtained in [1] above, a voltage of AC 45V was applied, and when the maximum temperature of the surface of each
每個加熱器進行3次上述測量,算出所取得之溫度差的平均值,以圖形表示於圖13。其結果,對於比較例1之加熱器之溫度差為18.03℃,實施例1為13.10℃,實施例2為13.00℃,實施例3為12.43℃,實施例4為12.50℃。即是,實施例1為27.3%,實施例2為27.9%,實施例3為31.1%,實施例4為30.7%,可知可以縮小各個溫度差,任一者皆取得優良的均熱效果。 The above measurement is performed 3 times for each heater, and the average value of the obtained temperature difference is calculated, which is graphically shown in Fig. 13. As a result, the temperature difference of the heater of Comparative Example 1 was 18.03°C, Example 1 was 13.10°C, Example 2 was 13.00°C, Example 3 was 12.43°C, and Example 4 was 12.50°C. That is, Example 1 is 27.3%, Example 2 is 27.9%, Example 3 is 31.1%, and Example 4 is 30.7%. It can be seen that each temperature difference can be reduced, and any one of them can achieve an excellent soaking effect.
[3]均熱層之厚度和形成位置的相關 [3] Correlation between the thickness of the soaking layer and the formation position
(1)實施例5之加熱器(參照圖1) (1) The heater of Example 5 (refer to Figure 1)
除了在基體11之另一面11b側之表面,形成有厚度8μm之均熱層13(直接積層型之均熱層131)以外,其他與實施例1相同,取得實施例5之加熱器1。即是,實施例5之加熱器1具有合計厚度8μm之直接積層型之均熱層131。
The
(2)實施例6之加熱器(參照圖3) (2) The heater of Example 6 (refer to Figure 3)
除了在基體11之一面11a及另一面11b之兩表面,各形成有厚度8μm之均熱層13(直接積層型之均熱層131)以外,其他與實施例3相同,取得實施例6之加熱器1。即是,實施例6之加熱器1具有合計厚度16μm之直接積層型之均熱層131。
Except for the two surfaces of one surface 11a and the
(3)實施例7之加熱器(參照圖5) (3) The heater of Example 7 (refer to Figure 5)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之一面11a側之表面,及另一面11b側之表面之兩表面,塗佈絕緣玻璃糊料之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
After coating the insulating glass paste on both surfaces of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之
未燒結層之後,進行燒結,而形成發熱層12。該發熱層12與實施例1相同。
In addition, the surface of the insulating
並且,在形成於基體11之另一面11b側之絕緣層141之表面,藉由網版印刷,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(間接積層型之均熱層132)。
In addition, on the surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面,和露出於基體11之另一面11b側之均熱層13之表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the two surfaces of the insulating
接著,使與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143),而取得實施例7(圖5)之加熱器。即是,實施例7之加熱器1具有合計厚度8μm之間接積層型之均熱層132。
Next, as in Example 1, a glass glaze layer (insulating layer 143) with a thickness of 20 μm was formed to obtain a heater of Example 7 (FIG. 5). That is, the
(4)實施例8之加熱器(參照圖6) (4) The heater of Example 8 (refer to Figure 6)
與實施例1相同,將厚度300μm之不鏽鋼薄膜設為基體11。
As in Example 1, a stainless steel thin film with a thickness of 300 μm was used as the
在該基體11之一面11a側之表面,及另一面11b側之表面之兩表面,塗佈絕緣玻璃糊料之後,進行燒結,而形成厚度75μm之玻璃釉層(絕緣層141)。
After coating the insulating glass paste on both surfaces of the
並且,在形成於基體11之一面11a側的絕緣層141之表面,藉由網版印刷,圖案製作形成成為發熱層12之未燒結層之後,進行燒結,而形成發熱層12。該發熱層
12與實施例1相同。
The surface of the insulating
並且,在形成於基體11之另一面11b側之絕緣層141之表面,藉由網版印刷,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(間接積層型之均熱層132)。
In addition, on the surface of the insulating
之後,將絕緣玻璃糊料塗佈在露出於基體11之一面11a側之絕緣層141及發熱層12之兩表面,和露出於基體11之另一面11b側之均熱層13之表面之後,進行燒結,而形成厚度50μm之玻璃釉層(絕緣層142)。
After that, the insulating glass paste is applied on the two surfaces of the insulating
接著,與實施例1相同,形成厚度20μm之玻璃釉層(絕緣層143)。 Next, as in Example 1, a glass glaze layer (insulating layer 143) with a thickness of 20 μm was formed.
並且,在形成於基體11之另一面11b側之玻璃釉層(絕緣層143)之表面,藉由網版印刷,塗佈銀糊料之後,進行燒結,而形成厚度8μm之均熱層13(間接積層型之均熱層132),而取得實施例8(圖6)之加熱器。即是,實施例8之加熱器1具有合計厚度16μm之間接積層型之均熱層132。
In addition, on the surface of the glass glaze layer (insulating layer 143) formed on the
(5)實施例9之加熱器(參照圖5) (5) The heater of Example 9 (refer to Figure 5)
除了於塗佈3次銀糊料之後,進行燒結,形成厚度24μm之均熱層13(間接積層型之均熱層132)以外,其他與實施例7相同,取得實施例9之加熱器。即是,實施例9之加熱器1具有合計厚度24μm之間接積層型之均熱層132。
The heater of Example 9 was obtained in the same manner as in Example 7 except that the silver paste was applied three times and then sintered to form a soaking layer 13 (indirect laminated type soaking layer 132) with a thickness of 24 μm. That is, the
(6)實施例10之加熱器(參照圖1) (6) The heater of Example 10 (refer to Figure 1)
除了在基體11之另一面11b側之表面,形成有厚度24μm之均熱層13(直接積層型之均熱層131)以外,其他與實施例1相同,取得實施例10之加熱器1。即是,實施例10之加熱器1具有合計厚度24μm之直接積層型之均熱層131。
The
(7)實施例11之加熱器(參照圖3) (7) The heater of Example 11 (refer to Figure 3)
除了在基體11之一面11a及另一面11b之兩表面,各形成有厚度36μm之均熱層13(直接積層型之均熱層131)以外,其他與實施例3相同,取得實施例11之加熱器1。即是,實施例11之加熱器1具有合計厚度72μm之直接積層型之均熱層131。
Except for the two surfaces of one surface 11a and the
(8)實施例12之加熱器(參照圖3) (8) The heater of Embodiment 12 (refer to Figure 3)
除了在基體11之一面11a及另一面11b之兩表面,各形成有厚度54μm之均熱層13(直接積層型之均熱層131)以外,其他與實施例3相同,取得實施例11之加熱器1。即是,實施例11之加熱器1具有合計厚度108μm之直接積層型之均熱層131。
Except that on both surfaces of one surface 11a and the
(9)實施例13之加熱器(參照圖5) (9) The heater of embodiment 13 (refer to Figure 5)
除了形成厚度54μm之均熱層13(間接積層型之均熱
層132)以外,其他與實施例7相同,取得實施例13之加熱器。即是,實施例13之加熱器1具有合計厚度54μm之間接積層型之均熱層132。
In addition to the formation of a 54μm thick soaking layer 13 (indirect laminated type soaking
Except for layer 132), the rest is the same as in Example 7, and the heater of Example 13 is obtained. That is, the
(10)實施例14之加熱器(參照圖6) (10) The heater of embodiment 14 (refer to Figure 6)
在絕緣層141之另一面側之表面形成厚度54μm之均熱層13(間接積層型之均熱層132),且在玻璃釉層(絕緣層143)之另一面側之表面形成厚度18μm之均熱層13(間接積層型之均熱層132)以外,其他與實施例8相同,取得實施例14之加熱器。即是,實施例14之加熱器1具有合計厚度72μm之間接積層型之均熱層132。
On the other side of the insulating
(11)測量1
(11)
使用上述[3](1)~(5)所取得之實施例5~9之加熱器,針對均熱層之厚度和形成位置之相關進行討論。進行與上述[2]相同之測量,求出最高溫度和最低溫度的溫度差。並且,將其結果以圖形表示於圖14。 Using the heaters of Examples 5 to 9 obtained in [3] (1) to (5) above, the correlation between the thickness of the soaking layer and the formation position is discussed. Perform the same measurement as in [2] above to find the temperature difference between the highest temperature and the lowest temperature. In addition, the results are graphically shown in FIG. 14.
在圖14中,連結實施例5~實施例6之直線表示使用直接積層型之均熱層131之情況的均熱化效果和均熱層之厚度的相關。另外,連結實施例7~實施例9之直線表示使用間接積層型之均熱層132之情況的均熱化效果和均熱層之厚度的相關。
In FIG. 14, the straight line connecting Example 5 to Example 6 indicates the correlation between the soaking effect and the thickness of the soaking layer in the case of using the direct-laminated type of soaking
從該圖14之結果,可知在使直接積層型之均熱層131之厚度,和間接積層型之均熱層132之厚度成為相同
的厚度之情況下,更降低溫度差的效果比較高的係直接積層型之均熱層131。
From the results of FIG. 14, it can be seen that the thickness of the direct-layered type
(12)測量2
(12)
使用上述[1](5)所取得之比較例1之加熱器,針對上述[3](1)~(10)所取得之實施例5~14之加熱器,針對均熱層之厚度和形成位置之相關進行討論。進行與上述[2]相同之測量,求出最高溫度和最低溫度之溫度差(每個加熱器進行3次測量,所取得之各資料中之溫度差的平均值)。並且,將其結果以圖形表示於圖18。 Using the heater of Comparative Example 1 obtained in [1](5) above, for the heaters of Examples 5-14 obtained in [3](1)~(10) above, regarding the thickness and formation of the soaking layer Discuss about the location. Perform the same measurement as in [2] above to find the temperature difference between the highest temperature and the lowest temperature (3 measurements for each heater, and the average value of the temperature differences in the data obtained). In addition, the results are graphically shown in FIG. 18.
從該圖18之結果,可知為直接積層型之均熱層131,或間接積層型之均熱層132,藉由對比較例1,設置厚度8μm極薄之均熱層13,發揮飛躍性的均熱作用(溫度差之降低作用)。即是,比較例1中之溫度差為18.3℃,對此,在實施例5(直接積層型均熱層8μm)中為11.2℃,在實施例7(間接積層型均熱層8μm)中為13.0℃。此可以說在實施例5中能取得38.8%之均熱作用,在實施例7中能取得29.0%之均熱作用。而且,該顯著之均熱作用至合計厚度為30μm左右能可得,從圖18可知。
From the results of FIG. 18, it can be seen that the direct build-up type
但是,從圖18,可知不管直接積層型之均熱層131,或間接積層型之均熱層132,對於均熱層厚度之增大,所取得的均熱作用逐漸縮小的樣子。即是,相對於比較例1之實施例7、實施例8及實施例9之各均熱作用,相對於比較例1之實施例5、實施例6及實施例10
之各均熱作用極優,對此比起該些均熱作用,相對於實施例11之實施例12的均熱作用,或相對於實施例13之實施例14的均熱作用被縮小。再者,使用直接積層型之均熱層131和間接積層型之均熱132之雙方,形成合計厚度200μm之均熱層13的例中的相同之溫度差為6.7℃。
However, from FIG. 18, it can be seen that regardless of the direct build-up type
從該些情形,可以說不管直接積層型之均熱層131,或間接積層型之均熱層132,當取得更有效果性的均熱作用時,以將均熱層之合計厚度設為150μm以下(通常為1μm以上)為佳,以設為60μm以下為更佳。以設為40μm以下為更佳,以設為30μm以下為特佳。
From these conditions, it can be said that regardless of the direct build-up type
[4]均熱層之平面形狀和均熱作用之相關 [4] The relationship between the planar shape of the soaking layer and the soaking effect
被設置在上述實施例1~實施例14之加熱器1的均熱層13之平面形狀中之任一者皆為圖17(a)所示之長方形狀(沾黏塗佈型態)。對此,圖9之均熱層之平面形狀,或圖17(b)~(g)之均熱層之平面形狀中之任一者皆為缺漏部133X(包含133H及133S)之型態。如此一來,下述般評估均熱層之平面形狀和均熱作用的相關。
Any of the planar shapes of the heat-soaking
(1)實施例15之加熱器(參照圖5) (1) The heater of Example 15 (refer to Figure 5)
與實施例7相同,取得具有厚度16μm之均熱層132的實施例15之加熱器。即是,實施例15為厚度16μm,具有平面形狀為長方形狀(沾黏塗佈型態)之間接積層型之均熱層132。
In the same manner as in Example 7, a heater of Example 15 having a
(2)實施例16之加熱器(參照圖5) (2) The heater of Example 16 (refer to Figure 5)
除將均熱層13(間接積層型之均熱層132)之平面形狀設為圖17(e)所示之條紋形狀以外,其他與實施例7相同,取得厚度16μm之均熱層132的實施例15之加熱器。另外,在平面形狀中之面積率,係將實施例15之加熱器之均熱層132設為100%之情況下,實施例16之加熱器的均熱層132為60.0%。
Except that the planar shape of the soaking layer 13 (indirect laminated type soaking layer 132) is set to the stripe shape shown in FIG. 17(e), the other is the same as in Example 7, and the implementation of obtaining the
(3)測量3
(3)
使用在上述[4](1)所取得之實施例15之加熱器(參照圖5),和在上述[4](2)所取得之實施例16之加熱器(參照圖5),進行與上述[2]相同的測量,求出最高溫度和最低溫度之溫度差(每個加熱器進行3次之測量,所取得之各資料中之溫度差的平均值)。 Using the heater of Example 15 (refer to FIG. 5) obtained in [4](1) above and the heater of Example 16 (refer to FIG. 5) obtained in [4](2) above, and In the same measurement as in [2] above, find the temperature difference between the highest temperature and the lowest temperature (each heater is measured 3 times, and the average value of the temperature differences in the data obtained).
其結果,實施例15之溫度差為10.7℃。另外,實施例16之溫度差為11.5℃。即是,可知實施例16之加熱器之均熱層132,不管面積率相對於實施例15為60%,亦發揮同水準的均熱作用。具體而言,實施例15之加熱器之均熱層132係每面積率1%之均熱效果為0.11℃,對此實施例16之加熱器之均熱層132係每面積率1%之均熱效果成為0.19℃,可知可以藉由更少的材料,有效率地予以均熱化。從該結果,可知藉由形成缺漏部133X,使平面形狀最佳化,能取得更高的均熱作用。
As a result, the temperature difference of Example 15 was 10.7°C. In addition, the temperature difference in Example 16 was 11.5°C. That is, it can be seen that the
另外,因上述各實施例及比較例之加熱器之均熱層13中之任一者皆燒結塗佈有銀糊料而形成,故成為具有複數之金屬粒子相連而被形成之金屬多孔部135a,和被配置在金屬多孔部之間隙的非金屬部135b之型態(參照圖16(a)及(b))。其中,金屬多孔部135a為銀粒子相連之型態,具體而言,呈圖16(b)之型態。另外,非金屬部135b藉由玻璃而被形成。 In addition, since any of the heating layers 13 of the heaters of the above-mentioned embodiments and comparative examples are formed by sintering and coating the silver paste, it becomes a porous metal part 135a formed by connecting a plurality of metal particles. , And the configuration of the non-metal part 135b arranged in the gap between the metal porous part (refer to Figure 16 (a) and (b)). Among them, the metal porous portion 135a is in a form in which silver particles are connected, specifically, it is in the form of FIG. 16(b). In addition, the non-metal portion 135b is formed of glass.
另外,在本發明中,不限定於上述具體實施型態所示者,可以設為因應目的、用途在本發明之範圍內做各種變更的實施型態。 In addition, in the present invention, it is not limited to what is shown in the above-mentioned specific embodiment, and can be set as an embodiment in which various changes are made within the scope of the present invention according to the purpose and application.
再者,本發明包含以下之發明。 Furthermore, the present invention includes the following inventions.
(1)以構成基體之材料為不鏽鋼為要旨的加熱器。 (1) A heater whose main body is stainless steel.
(2)以將基體之另一面側之表面設為與被加熱物之對向面為要旨的加熱器。 (2) A heater whose main point is that the surface on the other side of the base is the surface facing the object to be heated.
(3)構成均熱層之材料係以從銀、銅、鋁及包含該些中之至少1種之合金中被選擇為要旨的加熱器。 (3) The material constituting the thermal layer is a heater selected from silver, copper, aluminum, and alloys containing at least one of these.
(4)以將均熱層之厚度設為D1,將基體之厚度設為D2之情況下,D1和D2之比D1/D2為0.6以下為要旨的加熱器。 (4) to the average thickness of the thermal layer to D 1, the thickness of the substrate is set in the case of the D 2, D 1 and D 2 ratio D 1 / D 2 is 0.6 or less as the gist of the heater.
(5)以發熱層具備被電性並聯連接之複數之電阻發熱單元,各電阻發熱單元具有電阻發熱配線,其係連結被配置成相對於掃掠方向呈略垂直的複數之橫配線部,和連接橫配線部間的縱配線部而被形成髮夾彎狀為要旨的加熱器。 (5) The heating layer is provided with a plurality of resistance heating units electrically connected in parallel, each resistance heating unit has a resistance heating wiring, which connects a plurality of horizontal wiring portions arranged to be slightly perpendicular to the sweep direction, and A heater in which the vertical wiring portion between the horizontal wiring portions is connected to form a hairpin bend shape.
(6)以橫配線部較縱配線部長為要旨的加熱器。 (6) A heater whose main point is that the horizontal wiring is longer than the vertical wiring.
(7)以縱配線對掃掠方向傾斜為要旨的加熱器。 (7) A heater with vertical wiring inclined to the sweep direction.
(8)構成各電阻發熱單元之各電阻發熱配線具有正的電阻發熱係數的加熱器。 (8) A heater in which each resistance heating wire constituting each resistance heating unit has a positive resistance heating coefficient.
1‧‧‧加熱器 1‧‧‧Heater
1a‧‧‧加熱器之一面 1a‧‧‧One side of heater
1b‧‧‧加熱器之另一面(加熱面) 1b‧‧‧The other side of the heater (heating surface)
11‧‧‧基體 11‧‧‧Matrix
11a‧‧‧基體之一面 11a‧‧‧One side of the substrate
11b‧‧‧基體之另一面 11b‧‧‧The other side of the substrate
12‧‧‧發熱層 12‧‧‧Heating layer
13‧‧‧均熱層 13‧‧‧Heat layer
131‧‧‧直接積層型之均熱層 131‧‧‧Direct stack type thermal layer
14、141、142、143‧‧‧絕緣層(玻璃釉層) 14,141,142,143‧‧‧Insulation layer (glass glaze layer)
Claims (18)
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CN109587845A (en) * | 2018-10-24 | 2019-04-05 | 董林妤 | One kind exempting from binder baffle heater and its production technology |
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CN103931271A (en) * | 2011-11-15 | 2014-07-16 | 株式会社美铃工业 | Heater, and fixing device and drying device provided with same |
JP6385676B2 (en) | 2014-01-14 | 2018-09-05 | 株式会社Nttドコモ | User terminal, radio base station, and radio communication method |
Also Published As
Publication number | Publication date |
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JPWO2017131041A1 (en) | 2018-11-22 |
WO2017131041A1 (en) | 2017-08-03 |
JP6530088B2 (en) | 2019-06-12 |
CN107615879A (en) | 2018-01-19 |
TW201740227A (en) | 2017-11-16 |
CN107615879B (en) | 2021-01-15 |
KR20180106846A (en) | 2018-10-01 |
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