TWI723578B - 高純度碳化矽單晶基材及其製備方法、應用 - Google Patents

高純度碳化矽單晶基材及其製備方法、應用 Download PDF

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Publication number
TWI723578B
TWI723578B TW108136951A TW108136951A TWI723578B TW I723578 B TWI723578 B TW I723578B TW 108136951 A TW108136951 A TW 108136951A TW 108136951 A TW108136951 A TW 108136951A TW I723578 B TWI723578 B TW I723578B
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Taiwan
Prior art keywords
silicon carbide
carbide single
single crystal
crystal substrate
purity silicon
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TW108136951A
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English (en)
Chinese (zh)
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TW202028546A (zh
Inventor
高超
宗豔民
柏文文
張紅岩
竇文濤
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大陸商山東天岳先進科技股份有限公司
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Priority claimed from CN201811204666.3A external-priority patent/CN109338463B/zh
Priority claimed from CN201811205277.2A external-priority patent/CN109234802B/zh
Application filed by 大陸商山東天岳先進科技股份有限公司 filed Critical 大陸商山東天岳先進科技股份有限公司
Publication of TW202028546A publication Critical patent/TW202028546A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
TW108136951A 2018-10-16 2019-10-14 高純度碳化矽單晶基材及其製備方法、應用 TWI723578B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CNCN201811205277.2 2018-10-16
CNCN201811204666.3 2018-10-16
CN201811204666.3A CN109338463B (zh) 2018-10-16 2018-10-16 一种高纯碳化硅单晶衬底
CN201811205277.2A CN109234802B (zh) 2018-10-16 2018-10-16 一种制备高质量的半绝缘碳化硅单晶衬底的方法

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TW202028546A TW202028546A (zh) 2020-08-01
TWI723578B true TWI723578B (zh) 2021-04-01

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EP (1) EP3666935B1 (https=)
JP (1) JP7239182B2 (https=)
KR (1) KR102345680B1 (https=)
TW (1) TWI723578B (https=)
WO (1) WO2020077848A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102321229B1 (ko) 2021-03-30 2021-11-03 주식회사 쎄닉 탄화규소 웨이퍼 및 이를 적용한 반도체 소자
CN113390354A (zh) * 2021-07-21 2021-09-14 苏州恒嘉晶体材料有限公司 一种衬底片厚度检测装置及测量方法
CN115418725B (zh) * 2022-07-28 2024-04-26 浙江大学杭州国际科创中心 一种氮化硅薄膜热退火方法和装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1695253A (zh) * 2001-05-25 2005-11-09 克里公司 不具有钒控制的半绝缘碳化硅
TWI285404B (en) * 2002-06-24 2007-08-11 Cree Inc Method for producing semi-insulating resistivity in high purity silicon carbide crystals
TW201101482A (en) * 2009-05-11 2011-01-01 Sumitomo Electric Industries Insulating gate type bipolar transistor
CN106757357A (zh) * 2017-01-10 2017-05-31 山东天岳晶体材料有限公司 一种高纯半绝缘碳化硅衬底的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US8617965B1 (en) * 2004-02-19 2013-12-31 Partial Assignment to University of Central Florida Apparatus and method of forming high crystalline quality layer
JP4946264B2 (ja) * 2006-08-23 2012-06-06 日立金属株式会社 炭化珪素半導体エピタキシャル基板の製造方法
JP2009149481A (ja) * 2007-12-21 2009-07-09 Siltronic Ag 半導体基板の製造方法
JP5568054B2 (ja) * 2011-05-16 2014-08-06 トヨタ自動車株式会社 半導体素子の製造方法
CN105821471B (zh) * 2016-05-10 2018-10-30 山东大学 一种低应力高纯半绝缘SiC单晶的制备方法
CN107723798B (zh) * 2017-10-30 2020-06-02 中国电子科技集团公司第四十六研究所 一种高效率制备高纯半绝缘碳化硅单晶生长装置及方法
CN108130592B (zh) * 2017-11-14 2019-11-12 山东天岳先进材料科技有限公司 一种高纯半绝缘碳化硅单晶的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1695253A (zh) * 2001-05-25 2005-11-09 克里公司 不具有钒控制的半绝缘碳化硅
TWI285404B (en) * 2002-06-24 2007-08-11 Cree Inc Method for producing semi-insulating resistivity in high purity silicon carbide crystals
TW201101482A (en) * 2009-05-11 2011-01-01 Sumitomo Electric Industries Insulating gate type bipolar transistor
CN106757357A (zh) * 2017-01-10 2017-05-31 山东天岳晶体材料有限公司 一种高纯半绝缘碳化硅衬底的制备方法

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JP7239182B2 (ja) 2023-03-14
KR102345680B1 (ko) 2021-12-29
JP2021502943A (ja) 2021-02-04
KR20200044730A (ko) 2020-04-29
TW202028546A (zh) 2020-08-01
EP3666935C0 (en) 2024-05-22
EP3666935A1 (en) 2020-06-17
EP3666935A4 (en) 2020-10-14
EP3666935B1 (en) 2024-05-22
WO2020077848A1 (zh) 2020-04-23

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