TWI720576B - Manufacturing method of mems probe for inspecting semiconductor by using laser - Google Patents

Abstract

The disclosed content is about easy separation of the chip and the probe when the probe is manufactured through the MEMS process. The needle prevents the loss and damage of the probe and improves the recovery rate of the probe production. The disclosed content is a method for manufacturing a MEMS probe for semiconductor inspection using laser. The method for manufacturing a probe using a MEMS process includes: a first step of depositing a sacrificial layer on a substrate; a second step of The sacrificial layer is coated with photoresist; the third step is to form a photoresist pattern in the shape of a square array of probes extending from one side of the support part; the fourth step is to form a photoresist pattern along the above-mentioned light The resist pattern forms a metal layer; the fifth step is to remove the photoresist; the sixth step is to perform etching to remove the sacrificial layer located under the probe while not removing the support located at the The sacrificial layer at the lower part; the seventh step, the use of an adhesive member to fix the probe; the eighth step, the use of a laser to cut the probe from the support part; and the ninth step, the separation of the probe from the adhesive member.

Description

Manufacturing method of MEMS probe for semiconductor inspection using laser

The content of the present invention relates to a method of manufacturing a probe used in a semiconductor inspection device, and in particular to a method of manufacturing a probe through MEMS manufacturing process and laser processing.

Unless otherwise indicated, the content described in this section is not a conventional technology in the scope of the patent application of this application, and it is not recognized as a conventional technology because it is included in this section.

Generally speaking, semiconductor devices are manufactured by patterning individual integrated circuits (ICs) on a wafer, and separating each semiconductor device through a packaging process. In the above-mentioned semiconductor manufacturing process, a probe card is used in a test process for selecting and discriminating defective or not by inspecting the electrical characteristics of each wafer constituting the wafer. The probe card combined with the semiconductor test equipment is equipped with a printed circuit board and a plurality of probe pins. The printed circuit board receives electrical signals supplied by the test equipment and transmits them to the probe pins. The probe pins contact the solder as the electrical channels of the wafer. The pad applies electrical signals supplied by the test equipment to the chip, and judges whether the chip is defective or not through its output characteristics.

In addition, with the recent increase in the integration of semiconductor wafers, the pads of the semiconductor wafers have become finer and the pitch between the pads has also become smaller. Therefore, the probe card also needs to be miniaturized in accordance with the high integration of the semiconductor wafer, but the demand for miniaturization makes the process of manufacturing the probe card difficult.

That is, due to the trend toward larger and higher speeds in semiconductor technology development, semiconductor wafer testing devices adopt a MEMS probe format that uses a micro-probe molding technology using semiconductor MEMS technology compared to the existing pin format.

According to Korean Patent No. 10-0966901, in the method of manufacturing the probe tip, the first process of forming the probe tip, that is, depositing the sacrificial layer on the substrate (Substrate), is adopted in the method of manufacturing the probe tip; ) The second process; the third process of forming the PR pattern including the mold; the fourth process of electroplating the probe end of the metal layer on the mold; grinding through the mold and the electroplating together through chemical mechanical polishing The fifth process of forming the metal layer to adjust the thickness of the formed probe tip; and the sixth process of removing the PR pattern and etching the sacrificial layer to separate the formed probe tip.

Although fine-sized probes can be formed through such a process, as the operation of recovering the formed probe tip, it is necessary to immerse the probe in a metal etching solution to separate the probe from the wafer, and it is necessary to manually pick up the probes one by one. The operation consumes a lot of working time, and there is a risk of loss and damage of the probe during the operation.

Prior Art Document: Patent Document Korean Patent Publication No. 10-0966901

The purpose of the present invention is to easily separate the wafer and the probe when manufacturing the probe through the MEMS process, prevent the loss and damage of the probe, and improve the recovery rate of the probe production.

As an embodiment, a method for manufacturing a MEMS probe for semiconductor inspection using laser is provided. The method for manufacturing a probe using a MEMS process includes: a first step of depositing a sacrificial layer on a substrate; a second step of The above sacrificial layer is coated with photoresist; the third step is to form a photoresist pattern in the shape of a square array of probes extending from one side of the support part; the fourth step is to form a photoresist pattern along the above The photoresist pattern forms the metal layer; the fifth step is to remove the photoresist; the sixth step is to perform etching to remove the sacrificial layer located under the probe while not removing the supporting portion The sacrificial layer at the lower part of the above-mentioned sacrificial layer; the seventh step, the use of an adhesive member to fix the above-mentioned probe; the eighth step, the use of a laser to cut the above-mentioned probe from the support part; and the ninth step, the separation of the above-mentioned probe from the above-mentioned adhesive member .

According to the disclosed embodiment, during the process of separating the wafer and the probe by etching during the manufacturing process of the MEMS probe, the loss and damage of the probe can be reduced, and the square array shape of the probe can change the storage and quantity management. Easy. In addition, the laser can be used to perform precise work on the shape of the probe, shortening the work time.

The effects of this embodiment are not limited to the above-mentioned effects, and for those skilled in the art, other effects that are not mentioned can be made clearer through the following description.

10: substrate

20: Sacrifice layer

30: Photoresist

40: photoresist pattern

50: Metal layer

51: Support Department

52: Probe

53: Alignment key

60: Bonding parts

70: Laser

S100: first step

S200: second step

S300: third step

S400: Fourth step

S500: fifth step

S600: The sixth step

S700: Seventh step

S800: Eighth step

S900: Ninth step

Fig. 1 is a flow chart of an embodiment of a method for manufacturing the end of a MEMS probe; Fig. 2 is an explanatory diagram of an embodiment of a method for manufacturing the end of a MEMS probe; Fig. 3 is a manufacturing method of the end of a MEMS probe Example image of the tip of the probe.

The advantages, features, and prior methods of the present invention will become clear in conjunction with the drawings and the embodiments to be described in detail. However, the present invention is not limited by the following embodiments and can be implemented in various forms. The purpose of the present embodiment is to better illustrate the present invention, and to provide assistance to those skilled in the art to which the present invention belongs. However, the present invention only Subject to the scope of the patent application. In this specification, the same reference numerals refer to the same elements.

However, in the process of describing the embodiments of the present invention in detail, if it is considered that the specific description of the related disclosed function or structure hinders the understanding of the present invention, the detailed description will be omitted. In addition, the terms to be used are terms defined according to the functions of the embodiments of the present invention, and are different according to the intentions or conventions of users and operators. Therefore, its definition should be based on the entire content of this specification.

Hereinafter, the manufacturing method of the improved MEMS probe will be described with reference to the drawings.

As shown in FIGS. 1 and 2, the method for manufacturing a probe through the MEMS process includes: a first step S100: depositing a sacrificial layer 20 on the substrate 10; and a second step S200: coating the sacrificial layer 20 above The photoresist 30; the third step S300, from the side of the support 51, the photoresist pattern 40 is formed in the shape of a probe square with a plurality of probes 52 extended; the fourth step S400, along the above The photoresist pattern 40 forms the metal layer 50; the fifth step S500 is to remove the photoresist 30; the sixth step S600 is to perform etching to remove the sacrificial layer 20 located under the probe 52 at the same time , The sacrificial layer 20 located at the lower part of the supporting portion 51 is not removed; the seventh step S700, the probe 52 is fixed by the adhesive member 60; the eighth step S800, the laser is used 70 cuts the probe 52 from the support portion 51; and in the ninth step S900, separates the probe 52 from the adhesive member 60.

Specifically, in the first step S100, the sacrificial layer 20 is deposited on the substrate 10. In the MEMS manufacturing process, a silicon substrate (Si substrate) or SOI (Silicon On Insulator) can be used as the substrate 10. The sacrificial layer 20 can be made of a material that has good adhesion to the metal layer 50, does not cause interlayer peeling, and is easy to remove later. The materials that can be used as the above-mentioned sacrificial layer 20 include polysilicon, amorphous silicon, silicon oxide film, polymer, polyimide, aluminum, copper, tungsten, titanium, or chromium. However, according to an embodiment of the present invention, since the above-mentioned sacrificial layer 20 is deposited through a gold-plated electrode method, it is advisable to use metal materials. In particular, the use of copper is easy to manufacture and cost-effective. In addition, in order to facilitate the bonding between the sacrificial layer 20 and the substrate 10, the sacrificial layer 20 may be formed as a single layer of the above-mentioned material, and a bonding strengthening layer for strengthening adhesion between the above-mentioned material and the substrate 10 may be added to form For multiple layers. Preferably, titanium or chromium materials can be used for the above-mentioned joint strengthening layer.

In the second step S200, a photoresist 30 is coated on the above-mentioned sacrificial layer 20. The photoresist 30 described above is made of a substance that reacts with ultraviolet rays. The above-mentioned photoresist 30 is divided into positive photoresist (Positive PR) and negative photoresist (Negarive PR), and the above-mentioned positive photoresist has a shape that retains the part not irradiated with ultraviolet rays. The above-mentioned negative photoresist is a photoresist that retains the shape of the part irradiated with ultraviolet rays, and any photoresist material that forms a square probe array which will be described later can be used. However, in order to form a mold in the shape of a square probe array described later, the thickness of the photoresist 30 needs to be 50um or more, but it is difficult to coat the positive photoresist in a thick shape. The mold in the shape of the probe square can be formed into a thick shape, and it is preferable to use a strong and heat-resistant negative photoresist.

In the third step S300, a photoresist pattern 40 is formed in the shape of a square probe array in which a plurality of probes 52 are extended from one side of the support portion 51. In the above-mentioned method of forming the photoresist pattern 40, a photolithography method through a photomask can be used. According to the properties of the photoresist 30 selected in the second step, the photomask is configured as a mold that forms the shape of the probe square array.

As shown in FIG. 3, on the upper surface of the support portion 51, an alignment key 53 for position control at the time of cutting may be formed. The alignment key 53 may include any configuration and identification used for position control during laser cutting. It is not limited to the position and shape of the alignment key 53 shown in FIG. 3. As an example of the probe square shape, a plurality of beam-shaped support portions 51 with a certain width are combined with probes 52 arranged laterally on one side of the support portion 51 in the longitudinal direction, and the width of the support portion 51 may be It is larger than the width of the probe 52 described above. In addition, as another embodiment, the shape of the probe square array includes the position on the plane of the probe 52, the support part 51, the probe 52 and the support part provided with a blank part in a direction corresponding to at least one surface. 51 is formed by combining at least one connecting beam, and the width of the support portion 51 may be greater than the width of the probe 52. By having the above-mentioned shape, the sacrificial layer 20 located under the support portion 51 has a wider area than the sacrificial layer 20 located under the probe 52.

In the fourth step S400, a metal layer 50 is formed along the aforementioned photoresist pattern 40. As the method for forming the metal layer 50, an electroplating method can be used. The metal layer 50 is a conductive metal for transmitting electrical signals, and is preferably made of a material that can be electroplated. As the material of the metal layer, nickel, nickel alloy, beryllium, copper, tungsten, etc. can be used. A process of polishing the upper surface of the metal layer 50 and the photoresist 30 formed by the electroplating method through Chemical Mechanical Polishing (CMP) may be added. Using the chemical mechanical polishing described above, the thickness of the metal layer 50 can be adjusted.

In the fifth step S500, the above-mentioned photoresist 30 is removed. A removal method through chemical action can be used, and any configuration for removing the photoresist 30 can be included.

In the sixth step S600, etching is performed so as not to remove the sacrificial layer 20 located under the support portion 51 while removing the sacrificial layer 20 located under the probe 52. The above-mentioned etching methods include dry etching and wet etching, which can selectively remove only the sacrificial layer 20 without affecting the metal layer 50. Preferably, as the wet etching method described above, the penetration rate and etching rate of the etching solution are adjusted according to the difference in the width of the support portion 51 and the probe 52, so as to remove the sacrificial layer 20 located below the probe 52. At the same time, the sacrificial layer 20 located at the lower portion of the supporting portion 51 is not removed.

In the seventh step S700, the above-mentioned probe 52 is fixed by the adhesive member 60. The above-mentioned square array part of the above-mentioned probe square array located on the upper surface of the above-mentioned substrate 10 can be fixed by the adhesive member 60. In the eighth step to be described later, when the probe 52 is cut from the support portion 51 by the laser 70, any adhesive member 60 that prevents the probe 52 from being scattered can be used. Preferably, an adhesive tape may be used, but the adhesive member 60 is not limited thereto.

In the eighth step S800, the probe 52 is cut from the support portion 51 by using the laser 70. The above-mentioned cutting method may be machining or processing using laser. However, the state of the cut surface during machining is not neat, and the size of the cut probe 52 is not precise. Therefore, a preferable cutting method is to use the laser 70 to cut the probe 52 from the support 51. When the cutting method using the laser 70 is used, the work time can be shortened, the accuracy is improved, and the recovery rate can be improved.

In the ninth step S900, the probe 52 is separated from the adhesive member 60. The method of separating the probe 52 from the adhesive member 60 can be performed between the adhesive member 60 and the probe The bonding part of 52 is easily separated by coating ethanol or acetone. In addition, in order to facilitate separation, a material that reduces the adhesive force of the above-mentioned adhesive member 60 may be used for separation.

The above-mentioned embodiments are only used to illustrate the present invention but not to limit it. Those of ordinary skill in the art should understand that the present invention can be modified, deformed or equivalently replaced without departing from the spirit and scope of the present invention, which should be covered by the present invention. Within the scope of the patent application.

S100: first step

S200: second step

S300: third step

S400: Fourth step

S500: fifth step

S600: The sixth step

S700: Seventh step

S800: Eighth step

S900: Ninth step

Claims (2)

A method for manufacturing a MEMS probe for semiconductor inspection using a laser. The method for manufacturing a probe using a MEMS process includes: a first step, depositing a sacrificial layer on a substrate; and a second step, coating the above-mentioned sacrificial layer Photoresist; the third step is to extend a plurality of probes from one side of the support portion, and the width of the support portion is formed into a probe square shape that is wider than the width of the probes to form a photoresist Pattern; the fourth step, forming a metal layer along the photoresist pattern; the fifth step, removing the photoresist; the sixth step, adjusting the penetration of the etching solution according to the difference in the width of the support portion and the probe Rate and etching rate, etching is performed to remove the sacrificial layer located at the lower part of the probe while not removing the sacrificial layer located at the lower part of the support part; the seventh step, the probe is fixed by an adhesive member to The above-mentioned probe will not fall apart during laser cutting, the above-mentioned adhesive part is an adhesive tape; the eighth step, the use of a laser to cut the above-mentioned probe from the above-mentioned supporting part; and the ninth step, by reducing the amount of the above-mentioned adhesive part Adhesive force is used to separate the probe from the adhesive member. In order to reduce the adhesive force of the adhesive member, apply ethanol or acetone to the adhesive part of the adhesive member and the probe. In the third step, the probe square The shape includes a position on the plane of the probe, the support part provided with a blank part in a direction corresponding to at least one surface, and the probe and the support part are formed by combining at least one connecting beam, In the third step, in the method of manufacturing a MEMS probe for semiconductor inspection using a laser, an alignment key is formed on the upper surface of the support portion. A method for manufacturing a MEMS probe for semiconductor inspection using a laser. The method for manufacturing a probe using a MEMS process includes: a first step, depositing a sacrificial layer on a substrate; and a second step, coating the above-mentioned sacrificial layer Photoresist; the third step is to extend a plurality of probes from one side of the support portion, and the width of the support portion is formed into a probe square shape that is wider than the width of the probes to form a photoresist Pattern; the fourth step, forming a metal layer along the photoresist pattern; the fifth step, removing the photoresist; the sixth step, adjusting the penetration of the etching solution according to the difference in the width of the support portion and the probe Rate and etching rate, etching is performed to remove the sacrificial layer located at the lower part of the probe while not removing the sacrificial layer located at the lower part of the support part; the seventh step, the probe is fixed by an adhesive member to The above-mentioned probe will not fall apart during laser cutting, the above-mentioned adhesive part is an adhesive tape; the eighth step, the use of a laser to cut the above-mentioned probe from the above-mentioned supporting part; and the ninth step, by reducing the amount of the above-mentioned adhesive part Adhesive force is used to separate the probe from the adhesive member. In order to reduce the adhesive force of the adhesive member, apply ethanol or acetone to the adhesive part of the adhesive member and the probe. In the third step, the probe square The shape is a combination of a plurality of beam-shaped support parts with a certain width and a probe provided laterally on one side of the support part in the longitudinal direction, In the third step, in the method of manufacturing a MEMS probe for semiconductor inspection using a laser, an alignment key is formed on the upper surface of the support portion.

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