TW202009496A - Manufacturing method of mems probe for inspecting semiconductor by using laser - Google Patents

Abstract

Disclosed is a method for manufacturing a probe that can easily separate a chip and a probe, prevent loss and breakage of the probe, and improve the recovery rate of probe production when manufacturing the probe through the MEMS process. Disclosed is a method for manufacturing a MEMS probe for inspecting a semiconductor by using laser. The method for manufacturing a probe by using the MEMS process includes: a first step of depositing a sacrificial layer on a substrate; a second step of applying a photoresist on a top surface of the sacrificial layer; a third step of forming a photoresist pattern in a shape of a probe array extended by a plurality of probes from one side of a support portion; a fourth step of forming a metal layer along the photoresist pattern; a fifth step of removing the photoresist; a sixth step of performing etching to remove the sacrificial layer located below the probe without removing the sacrificial layer located below the support portion; a seventh step of fixing the probe by using an adhesive member; an eighth step of cutting the probe from the support portion by using laser; and a ninth step of separating the probe from the adhesive member.

Description

Manufacturing method of MEMS probe for semiconductor inspection using laser

The content of the present invention relates to a method of manufacturing a probe used for a semiconductor inspection device, and particularly to a method of manufacturing a probe through a MEMS process and laser processing.

Unless otherwise stated, the content described in this section is not a conventional technology for the patent application scope of this application, nor is it recognized as a conventional technology because it is included in this section.

In general, a semiconductor device (semiconductor device) is manufactured by patterning individual integrated circuits (ICs) on a wafer and separating each semiconductor device through a packaging step. In the semiconductor manufacturing process described above, a probe card is used in a test process in which the defects of the wafers that constitute the wafer are checked and selected to determine whether they are defective or not. The probe card combined with the semiconductor test equipment is provided with a printed circuit board and a plurality of probe pins. The printed circuit board receives the electrical signal supplied by the test equipment and transmits it to the probe pins. The probe pins contact the solder that is the electrical channel of the wafer A pad applies the electrical signal supplied by the test equipment to the wafer, and judges whether the wafer is defective or not through its output characteristics.

In addition, with the recent increase in integration of semiconductor wafers, the pads of the semiconductor wafers have become finer and the pitch between the pads has become smaller. Therefore, the probe card also needs to be made finer according to the high integration of the semiconductor wafer, but the requirement of the above-mentioned miniaturization makes the process of manufacturing the probe card difficult.

That is, the semiconductor wafer testing apparatus adopts a MEMS probe format using a micro-probe molding technique using semiconductor MEMS technology, compared with the existing pin format due to the trend of large-scale and high-speed development based on semiconductor technology.

According to Korean Patent No. 0-0966901, in the method of manufacturing a probe tip, through the first process of forming the probe tip, that is, depositing a sacrificial layer on a substrate (Substrate); applying a photoresist (PR ) The second process; the third process of forming the PR pattern including the mold; the fourth process of electroplating on the mold to form the probe end of the metal layer; grinding through the mold and the electroplating together by chemical mechanical polishing The fifth process of forming the metal layer to adjust the thickness of the formed probe end; and the sixth process of removing the PR pattern and etching the sacrificial layer to separate the formed probe end.

Although a fine-sized probe can be formed through such a process, as the operation of recovering the formed probe end, it is necessary to immerse in a metal etching solution to separate the probe from the wafer, and it is necessary to manually pick up the probes one by one. The operation consumes a lot of operation time, and there is a risk of loss and damage of the probe during the operation.

Prior Technical Document: Patent Document Korean Patent Gazette No. 10-0966901

The problem to be solved:

The purpose of the present invention is to manufacture a probe that can easily separate the wafer and the probe when manufacturing the probe through the MEMS manufacturing process, prevent the loss and damage of the probe, and can improve the recovery rate of the probe production.

Technical means to solve problems:

As an embodiment, a method for manufacturing a MEMS probe for semiconductor inspection using laser is provided. The method for manufacturing a probe using a MEMS process includes: a first step, depositing a sacrificial layer on a substrate; a second step, in A photoresist is coated on the sacrificial layer; the third step is to form a photoresist pattern in the shape of a square array of probes extended from the side of the support portion; the fourth step is along the above A metal layer is formed by the photoresist pattern; the fifth step is to remove the photoresist; the sixth step is to etch to remove the sacrificial layer located under the probe without removing the support portion The sacrificial layer at the lower part of the; the seventh step, the probe is fixed with an adhesive member; the eighth step, the laser is cut from the support portion with laser; and the ninth step, the probe is separated from the adhesive member .

Compare the efficacy of the previous technology:

According to the disclosed embodiments, in the process of separating the wafer and the probe by etching during the manufacturing process of the MEMS probe, the loss and damage of the probe can be reduced, and the shape of the square array of the probe can change the storage and quantity management It's easy. In addition, laser can be used to perform precise work on the shape of the probe, shortening the working time.

The effects of the present embodiment are not limited to the above-mentioned effects, but for those skilled in the art, other effects not mentioned can be made clearer by the following description.

The advantages, features and prior methods of the present invention will become clear with reference to the drawings and embodiments to be described in detail. However, the present invention is not limited by the following embodiments and can be implemented in various forms. The purpose of this embodiment is to better illustrate the present invention and provide help for those skilled in the art to which the present invention belongs. Limited by the scope of patent application. In this specification, the same element symbol refers to the same element.

However, during the detailed description of the embodiments of the present invention, if it is considered that the specific description of the related disclosed functions or structures hinders the understanding of the present invention, the detailed description thereof will be omitted. In addition, the term to be used is a term defined according to the function of the embodiment of the present invention, which differs according to the intention or convention of the user or operator. Therefore, the definition should be based on the entire contents of this specification.

The method of manufacturing the improved MEMS probe will be described below with reference to the drawings.

As shown in FIGS. 1 and 2, the method for manufacturing the probe through the MEMS manufacturing process includes:

In the first step S100, a sacrificial layer 20 is deposited on the substrate 10; in the second step S200, a photoresist 30 is coated on the sacrificial layer 20; in the third step S300, from the side of the support portion 51, a plurality of The shape of the probe square array extended by the probe 52 forms a photoresist pattern 40; a fourth step S400, forming a metal layer 50 along the photoresist pattern 40; a fifth step S500, removing the photoresist Agent 30; sixth step S600, etching is performed to remove the sacrificial layer 20 located under the probe 52 without removing the sacrificial layer 20 located under the support 51; the seventh step S700, using adhesive The connecting member 60 fixes the probe 52; the eighth step S800, the laser beam 70 is used to cut the probe 52 from the support portion 51; and the ninth step S900, the probe 52 is separated from the adhesive member 60.

Specifically, in the first step S100, a sacrificial layer 20 is deposited on the substrate 10. In the MEMS manufacturing process, a silicon substrate (Si substrate) or SOI (Silicon On Insulator) can be used as the substrate 10. For the sacrificial layer 20, a material that has good adhesion to the metal layer 50, does not cause delamination between layers, and can be easily removed later. Materials that can be used as the sacrificial layer 20 include polysilicon, amorphous silicon, silicon oxide film, polymer, polyimide, aluminum, copper, tungsten, titanium, chromium, or the like. However, according to an embodiment of the present invention, since the sacrificial layer 20 is deposited through a gold-plated electrode, a metal material is preferably used. In particular, the use of copper is easy to manufacture and cost-effective. In addition, in order to facilitate the bonding between the sacrificial layer 20 and the substrate 10, the sacrificial layer 20 may be composed of the material as a single layer, and a bonding strengthening layer to strengthen adhesion between the material and the substrate 10 is added to form For multiple layers. Preferably, titanium or chromium material can be used for the above-mentioned bonding strengthening layer.

In the second step S200, the photoresist 30 is coated on the sacrificial layer 20. The photoresist 30 is made of a substance that reacts with ultraviolet rays. The photoresist 30 is divided into a positive photoresist (Positive PR) and a negative photoresist (Negarive PR). The positive photoresist has a shape that retains a portion that is not irradiated with ultraviolet rays. The negative photoresist is a photoresist that retains the shape of the portion irradiated with ultraviolet rays, and any photoresist substance that forms a probe matrix to be described later can be used. However, in order to form a mold in the shape of a probe matrix described later, the thickness of the photoresist 30 needs to be 50 μm or more than 100 μm, but it is difficult to apply the positive photoresist into a thick shape. The mold of the above-mentioned probe square matrix shape can be formed into a thick shape, and it is preferable to use a strong and heat-resistant negative photoresist.

In the third step S300, a photoresist pattern 40 is formed in the shape of a square array of probes extended from a plurality of probes 52 from the side of the support portion 51. In the above method of forming the photoresist pattern 40, a photolithography method through a photomask may be used. According to the properties of the photoresist 30 selected in the second step, the photomask is configured as a mold for forming the square array of probes.

As shown in FIG. 3, on the upper surface of the support portion 51, an alignment key 53 for position control during cutting can be formed. The alignment key 53 may include any configuration and mark used for position control when the laser is cut. It is not limited to the position and shape of the alignment key 53 shown in FIG. 3. As an example of the square shape of the probe, a plurality of beam-shaped support portions 51 having a certain width are combined with a probe 52 arranged laterally on one side surface of the support portion 51 in the longitudinal direction. The width of the support portion 51 may be It is larger than the width of the probe 52 described above. In addition, as another embodiment, the shape of the probe square matrix includes a position of the probe 52 on the plane of the probe 52, and the support portion 51, the probe 52 and the support portion are provided through a blank portion in a direction corresponding to at least one surface 51 is formed by combining at least one connecting beam, and the width of the support portion 51 may be greater than the width of the probe 52. By having the above shape, the sacrificial layer 20 located under the support portion 51 has a wider area than the sacrificial layer 20 located under the probe 52.

In the fourth step S400, a metal layer 50 is formed along the above-mentioned photoresist pattern 40. As the method of forming the metal layer 50, an electroplating method can be used. The metal layer 50 is a conductive metal for transmitting electrical signals and is preferably made of a material that can be subjected to an electroplating method. As the material of the metal layer, nickel, nickel alloy, beryllium, copper, tungsten and the like can be used. A process of chemical mechanical polishing (CMP) to polish the upper surface of the metal layer 50 and the photoresist 30 formed by the electroplating method may be added. With the above-described chemical mechanical polishing, the thickness of the metal layer 50 can be adjusted.

In the fifth step S500, the photoresist 30 described above is removed. A removal method through chemical action may be used, and may include any configuration for removing the photoresist 30.

In the sixth step S600, etching is performed so as not to remove the sacrificial layer 20 located under the support portion 51 while removing the sacrificial layer 20 located under the probe 52. The above etching methods include dry etching and wet etching, which can selectively remove the sacrificial layer 20 without affecting the metal layer 50 at the same time. Preferably, as the wet etching method, according to the difference between the width of the support portion 51 and the probe 52, the penetration rate and the etching speed of the etching solution are adjusted to remove the sacrificial layer 20 located below the probe 52 At the same time, the sacrificial layer 20 located below the support portion 51 is not removed.

In the seventh step S700, the above-mentioned probe 52 is fixed by the adhesive member 60. The square array portion of the probe square array on the upper surface of the substrate 10 can be fixed by the adhesive member 60. In the eighth step to be described later, when the probe 52 is cut from the support portion 51 by the laser 70, any adhesive member 60 that prevents the probe 52 from being scattered can be used. Preferably, an adhesive tape can be used, but the adhesive member 60 is not limited thereto.

In the eighth step S800, the probe 52 is cut from the support portion 51 by the laser 70. The above-mentioned cutting method may be mechanical processing and processing using laser. However, the state of the cut surface during machining is uneven, and the size of the cut probe 52 described above is not precise. Therefore, a preferred cutting method is to cut the probe 52 from the support portion 51 using the laser 70. When the cutting method using the laser 70 is used, the working time can be shortened, the accuracy can be improved, and the recovery rate can be improved.

In the ninth step S900, the probe 52 is separated from the adhesive member 60. The method of separating the probe 52 from the adhesive member 60 can be easily separated by applying ethanol or acetone to the adhesive part of the adhesive member 60 and the probe 52. In addition, in order to facilitate separation, a material that reduces the adhesion force of the above-mentioned adhesion member 60 may be used for separation.

The above-mentioned embodiments are only used to illustrate the present invention but not to limit it. Those of ordinary skill in the art should understand that the present invention can be modified, modified, or equivalently replaced without departing from the spirit and scope of the present invention, which should be covered in the present invention. Of the scope of patent applications.

10‧‧‧ substrate 20‧‧‧Sacrifice 30‧‧‧Photoresist 40‧‧‧Photoresist pattern 50‧‧‧Metal layer 51‧‧‧Support 52‧‧‧Probe 53‧‧‧Alignment key 60‧‧‧bonded parts 70‧‧‧Laser S100‧‧‧First step S200‧‧‧The second step S300‧‧‧The third step S400‧‧‧The fourth step S500‧‧‧The fifth step S600‧‧‧Sixth step S700‧‧‧Step 7 S800‧‧‧Eighth step S900‧‧‧The ninth step

FIG. 1 is a flowchart of an embodiment of a method for manufacturing an end of a MEMS probe; 2 is a process explanatory diagram of an embodiment of a method for manufacturing a MEMS probe tip; FIG. 3 is an exemplary diagram of a probe tip manufactured by a method of manufacturing a MEMS probe tip.

no

S100‧‧‧First step

S200‧‧‧The second step

S300‧‧‧The third step

S400‧‧‧The fourth step

S500‧‧‧The fifth step

S600‧‧‧Sixth step

S700‧‧‧Step 7

S800‧‧‧Eighth step

S900‧‧‧The ninth step

Claims (4)

A method for manufacturing a MEMS probe for semiconductor inspection using laser. The method for manufacturing a probe using a MEMS manufacturing process includes: The first step is to deposit a sacrificial layer on the substrate; In the second step, a photoresist is coated on the sacrificial layer; The third step is to form a photoresist pattern from the side of the support part in the shape of a square array of probes extended by multiple probes; In the fourth step, a metal layer is formed along the photoresist pattern; The fifth step is to remove the photoresist; In the sixth step, etching is performed so as to not remove the sacrificial layer located under the support portion while removing the sacrificial layer located under the probe; In the seventh step, the above-mentioned probes are fixed with adhesive parts; In the eighth step, the laser is used to cut the probe from the support portion; and In the ninth step, the probe is separated from the adhesive member. The method for manufacturing a MEMS probe for semiconductor inspection using laser according to claim 1, wherein in the third step, an alignment key is formed on the support portion. The method for manufacturing a MEMS probe for semiconductor inspection using laser according to claim 1 or 2, wherein in the third step, a plurality of beam-shaped support portions having a certain width and the length of the support portions are combined In a probe provided laterally on one side of the direction, the width of the support portion is greater than the width of the probe. The method for manufacturing a MEMS probe for semiconductor inspection using laser according to claim 1 or 2, wherein in the third step, the square shape of the probe includes a position on the plane of the probe, along with at least The support portion is provided across the blank portion in a direction corresponding to one side. The probe and the support portion are formed by coupling through at least one connecting beam. The width of the support portion is greater than the width of the probe.

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