TWI720087B - 光學系統，尤其是用於微影投射曝光裝置 - Google Patents

光學系統，尤其是用於微影投射曝光裝置 Download PDF

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Publication number
TWI720087B
TWI720087B TW105141037A TW105141037A TWI720087B TW I720087 B TWI720087 B TW I720087B TW 105141037 A TW105141037 A TW 105141037A TW 105141037 A TW105141037 A TW 105141037A TW I720087 B TWI720087 B TW I720087B
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TW
Taiwan
Prior art keywords
reflective surface
optical system
sensor
relative
reflective
Prior art date
Application number
TW105141037A
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English (en)
Chinese (zh)
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TW201732344A (zh
Inventor
尤瑞奇 順霍夫
Original Assignee
德商卡爾蔡司Ｓｍｔ有限公司
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Publication of TW201732344A publication Critical patent/TW201732344A/zh
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Publication of TWI720087B publication Critical patent/TWI720087B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/004—Systems comprising a plurality of reflections between two or more surfaces, e.g. cells, resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/12—Reflex reflectors
    • G02B5/122—Reflex reflectors cube corner, trihedral or triple reflector type
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
TW105141037A 2015-12-15 2016-12-12 光學系統，尤其是用於微影投射曝光裝置 TWI720087B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015225262.0 2015-12-15
DE102015225262.0A DE102015225262A1 (de) 2015-12-15 2015-12-15 Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage

Publications (2)

Publication Number Publication Date
TW201732344A TW201732344A (zh) 2017-09-16
TWI720087B true TWI720087B (zh) 2021-03-01

Family

ID=57680209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105141037A TWI720087B (zh) 2015-12-15 2016-12-12 光學系統，尤其是用於微影投射曝光裝置

Country Status (6)

Country Link
US (1) US10838306B2 (enExample)
JP (1) JP6864685B2 (enExample)
KR (1) KR102694720B1 (enExample)
DE (1) DE102015225262A1 (enExample)
TW (1) TWI720087B (enExample)
WO (1) WO2017102599A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017202976A1 (en) * 2016-05-25 2017-11-30 Carl Zeiss Smt Gmbh Position measurement of optical elements in a lithographic apparatus
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage

Citations (3)

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US20060215133A1 (en) * 2005-03-22 2006-09-28 Nikon Corporation Image shift optic for optical system
EP2388650A1 (en) * 2007-12-21 2011-11-23 Carl Zeiss SMT GmbH Illumination system for illuminating a mask in a microlithographic exposure apparatus
TW201235800A (en) * 2011-01-20 2012-09-01 Zeiss Carl Smt Gmbh Method of operating a projection exposure tool for microlithography

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JP2001215718A (ja) * 1999-11-26 2001-08-10 Nikon Corp 露光装置及び露光方法
JP2002231619A (ja) * 2000-11-29 2002-08-16 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
DE10118047A1 (de) 2001-04-11 2002-10-17 Zeiss Carl Katadioptrisches Objektiv
DE10204465A1 (de) * 2002-02-05 2003-08-14 Zeiss Carl Smt Ag Verfahren zur Korrektur von schwingungsinduzierten Abbildungsfehlern in einem Objektiv
EP1493060A2 (de) * 2002-04-11 2005-01-05 Heidelberg Instruments Mikrotechnik GmbH Verfahren und Vorrichtung zum Abbilden einer Maske auf einem Substrat
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
JP2004266264A (ja) * 2003-02-13 2004-09-24 Canon Inc 光学系、露光装置、デバイス製造方法
US7126671B2 (en) * 2003-04-04 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006140366A (ja) * 2004-11-15 2006-06-01 Nikon Corp 投影光学系及び露光装置
DE102006003375A1 (de) * 2006-01-24 2007-08-09 Carl Zeiss Smt Ag Gruppenweise korrigiertes Objektiv
JP2007317713A (ja) * 2006-05-23 2007-12-06 Canon Inc 光学素子駆動装置
DE102006034755A1 (de) * 2006-07-24 2008-01-31 Carl Zeiss Smt Ag Optische Vorrichtung sowie Verfahren zur Korrektur bzw. Verbesserung des Abbildungsverhaltens einer optischen Vorrichtung
WO2008040494A1 (en) * 2006-10-02 2008-04-10 Carl Zeiss Smt Ag Method for improving the imaging properties of an optical system, and such an optical system
WO2008064859A2 (en) * 2006-12-01 2008-06-05 Carl Zeiss Smt Ag Optical system with an exchangeable, manipulable correction arrangement for reducing image aberrations
US20090042115A1 (en) 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
JP4986754B2 (ja) 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
US20110001945A1 (en) * 2009-07-01 2011-01-06 Masayuki Shiraishi Projection optical system, exposure apparatus, and assembly method thereof
DE102010038748A1 (de) 2009-08-07 2011-03-24 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines Spiegels mit wenigstens zwei Spiegelflächen, Spiegel einer Projektionsbelichtungsanlage der Mikrolithographie und Projektionsbelichtungsanlage
DE102011087851A1 (de) 2010-12-22 2012-06-28 Carl Zeiss Smt Gmbh Verschlusseinrichtung für eine Lithographievorrichtung und Lithographievorrichtung
NL2007498A (en) 2010-12-23 2012-06-27 Asml Netherlands Bv Lithographic apparatus and method of modifying a beam of radiation within a lithographic apparatus.
DE102012202675A1 (de) 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
DE102012212064A1 (de) 2012-07-11 2014-01-16 Carl Zeiss Smt Gmbh Lithographianlage mit segmentiertem Spiegel
JP2014120682A (ja) * 2012-12-18 2014-06-30 Canon Inc 露光装置、露光方法及びデバイス製造方法
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060215133A1 (en) * 2005-03-22 2006-09-28 Nikon Corporation Image shift optic for optical system
EP2388650A1 (en) * 2007-12-21 2011-11-23 Carl Zeiss SMT GmbH Illumination system for illuminating a mask in a microlithographic exposure apparatus
TW201235800A (en) * 2011-01-20 2012-09-01 Zeiss Carl Smt Gmbh Method of operating a projection exposure tool for microlithography

Also Published As

Publication number Publication date
US20180246416A1 (en) 2018-08-30
WO2017102599A1 (en) 2017-06-22
KR20180093923A (ko) 2018-08-22
TW201732344A (zh) 2017-09-16
JP6864685B2 (ja) 2021-04-28
JP2019505825A (ja) 2019-02-28
DE102015225262A1 (de) 2017-06-22
US10838306B2 (en) 2020-11-17
KR102694720B1 (ko) 2024-08-14

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