TWI719804B - 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 - Google Patents

光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 Download PDF

Info

Publication number
TWI719804B
TWI719804B TW109101242A TW109101242A TWI719804B TW I719804 B TWI719804 B TW I719804B TW 109101242 A TW109101242 A TW 109101242A TW 109101242 A TW109101242 A TW 109101242A TW I719804 B TWI719804 B TW I719804B
Authority
TW
Taiwan
Prior art keywords
pupil
measurement
metrology
landscape
metric
Prior art date
Application number
TW109101242A
Other languages
English (en)
Chinese (zh)
Other versions
TW202018836A (zh
Inventor
伊夫吉尼 古理維克
托爾 馬西安諾
艾度 亞當
托爾 亞茲
歐佛 薩哈蘭
巴瑞克 布蘭歐里茲
摩西 庫柏
洛伊 蘇里馬斯基
亞爾 飛勒
湯姆 里維安特
諾佳 夕拉
波瑞斯 伊佛瑞堤
納達夫 卡梅爾
里拉齊 沙屯
亞米爾 漢德曼
艾爾特沙豐 亞希渥
歐哈德 貝洽爾
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW202018836A publication Critical patent/TW202018836A/zh
Application granted granted Critical
Publication of TWI719804B publication Critical patent/TWI719804B/zh

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
TW109101242A 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 TWI719804B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06

Publications (2)

Publication Number Publication Date
TW202018836A TW202018836A (zh) 2020-05-16
TWI719804B true TWI719804B (zh) 2021-02-21

Family

ID=56075006

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109101242A TWI719804B (zh) 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測
TW104139220A TWI711096B (zh) 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,及計量學模組

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104139220A TWI711096B (zh) 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,及計量學模組

Country Status (8)

Country Link
US (1) US10831108B2 (enExample)
JP (3) JP6770958B2 (enExample)
KR (1) KR102269514B1 (enExample)
CN (2) CN107078074B (enExample)
IL (1) IL251972B (enExample)
SG (1) SG11201703585RA (enExample)
TW (2) TWI719804B (enExample)
WO (1) WO2016086056A1 (enExample)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3221897A1 (en) 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN110553602B (zh) 2014-11-26 2021-10-26 Asml荷兰有限公司 度量方法、计算机产品和系统
CN112859541A (zh) 2015-05-19 2021-05-28 科磊股份有限公司 光学系统
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
CN107924137B (zh) * 2015-06-17 2021-03-05 Asml荷兰有限公司 基于配置方案间的一致性的配置方案选择
WO2017099843A1 (en) 2015-12-08 2017-06-15 Kla-Tencor Corporation Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination
WO2017102304A1 (en) * 2015-12-17 2017-06-22 Asml Netherlands B.V. Adjustment of a metrology apparatus or a measurement thereby based on a characteristic of a target measured
KR102738803B1 (ko) 2016-02-24 2024-12-04 케이엘에이 코포레이션 광학 계측의 정확도 개선
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
KR102188711B1 (ko) 2016-02-26 2020-12-09 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
IL262114B2 (en) 2016-04-22 2023-04-01 Asml Netherlands Bv Determining the stack difference and correcting with the help of the stack difference
WO2017198422A1 (en) * 2016-05-17 2017-11-23 Asml Netherlands B.V. Metrology robustness based on through-wavelength similarity
IL297496B2 (en) 2016-07-15 2025-03-01 Asml Netherlands Bv Method and device for designing a target field for metrology
US10578982B2 (en) 2016-08-17 2020-03-03 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
KR102265164B1 (ko) * 2016-09-27 2021-06-15 에이에스엠엘 네델란즈 비.브이. 계측 레시피 선택
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
WO2018063625A1 (en) 2016-09-28 2018-04-05 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
JP6880184B2 (ja) 2016-11-10 2021-06-02 エーエスエムエル ネザーランズ ビー.ブイ. スタック差を使用した設計及び補正
JP6877541B2 (ja) 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
US10496781B2 (en) * 2016-12-19 2019-12-03 Kla Tencor Corporation Metrology recipe generation using predicted metrology images
US10824079B2 (en) * 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
FR3062516B1 (fr) 2017-01-30 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
WO2018217232A1 (en) * 2017-05-22 2018-11-29 Kla-Tencor Corporation Zonal analysis for recipe optimization and measurement
US10996567B2 (en) 2017-06-14 2021-05-04 Asml Netherlands B.V. Lithographic apparatus and method
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
WO2019010325A1 (en) * 2017-07-06 2019-01-10 Kla-Tencor Corporation ESTIMATION OF AMPLITUDE AND PHASE ASYMMETRY IN IMAGING TECHNOLOGY TO OBTAIN HIGH PRECISION IN RECOVERY METROLOGY
US10401738B2 (en) 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US10627720B2 (en) 2017-08-18 2020-04-21 Globalfoundries Inc. Overlay mark structures
CN111052328B (zh) * 2017-08-30 2021-08-03 科磊股份有限公司 根据工艺变化的计量测量参数的快速调整
US10699969B2 (en) 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
IL273145B2 (en) * 2017-09-11 2024-03-01 Asml Netherlands Bv Metrology in lithographic processes
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
US10565697B2 (en) * 2017-10-22 2020-02-18 Kla-Tencor Corporation Utilizing overlay misregistration error estimations in imaging overlay metrology
US11199506B2 (en) * 2018-02-21 2021-12-14 Applied Materials Israel Ltd. Generating a training set usable for examination of a semiconductor specimen
WO2019182637A1 (en) 2018-03-19 2019-09-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US12416580B2 (en) * 2018-05-07 2025-09-16 Unm Rainforest Innovations Method and system for in-line optical scatterometry
KR102586405B1 (ko) * 2018-06-14 2023-10-10 노바 엘티디. 반도체 제조용 측정 및 공정 제어
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
NL2021852A (en) 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
US11410111B1 (en) * 2018-08-08 2022-08-09 Wells Fargo Bank, N.A. Generating predicted values based on data analysis using machine learning
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
SG11202104681RA (en) 2018-11-21 2021-06-29 Kla Tencor Corp Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11119417B2 (en) * 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11062928B2 (en) 2019-10-07 2021-07-13 Kla Corporation Process optimization using design of experiments and response surface models
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
WO2020176117A1 (en) 2019-02-22 2020-09-03 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices
CN114174927B (zh) * 2019-07-04 2025-05-13 Asml荷兰有限公司 光刻工艺及关联设备的子场控制
KR102517587B1 (ko) * 2019-07-10 2023-04-03 케이엘에이 코포레이션 데이터 기반 오정렬 파라미터 구성 및 측정 시스템 및 방법
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
CN114556223A (zh) * 2019-10-14 2022-05-27 Asml控股股份有限公司 量测标记结构和确定量测标记结构的方法
US12399120B2 (en) 2019-11-01 2025-08-26 Unm Rainforest Innovations In-line angular optical multi-point scatterometry for nanomanufacturing systems
KR20220107006A (ko) * 2019-11-28 2022-08-01 케이엘에이 코포레이션 계측 랜드스케이프에 기초한 계측 최적화를 위한 시스템 및 방법
US12283503B2 (en) * 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
USD977504S1 (en) 2020-07-22 2023-02-07 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
WO2023096704A1 (en) * 2021-11-27 2023-06-01 Kla Corporation Improved targets for diffraction-based overlay error metrology
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
CN115327857A (zh) * 2022-05-30 2022-11-11 上海华力集成电路制造有限公司 一种量测方法、激光套刻装置、计算机存储介质及模组
IL293633B2 (en) * 2022-06-06 2024-06-01 Nova Ltd A system and method for building a library and using it in measurements on designed buildings
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US20240337953A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for tracking real-time position for scanning overlay metrology
US20240402615A1 (en) * 2023-06-02 2024-12-05 Kla Corporation Single grab pupil landscape via broadband illumination
EP4538794A1 (en) * 2023-10-13 2025-04-16 ASML Netherlands B.V. Metrology method and associated metrology device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120022836A1 (en) * 2010-07-22 2012-01-26 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
TW201314174A (zh) * 2011-06-20 2013-04-01 Tokyo Electron Ltd 利用光學臨界尺寸計量之結構分析用光學參數模型之最佳化方法
TW201329417A (zh) * 2011-10-31 2013-07-16 Tokyo Electron Ltd 用於計量之以流程變異為基礎的模型最佳化
TW201346214A (zh) * 2012-03-28 2013-11-16 Tokyo Electron Ltd 基於光譜靈敏度之模型優化方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7330279B2 (en) 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
KR101682838B1 (ko) 2005-11-18 2016-12-12 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7656518B2 (en) * 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
KR101793538B1 (ko) * 2010-07-19 2017-11-03 에이에스엠엘 네델란즈 비.브이. 오버레이 오차를 결정하는 장치 및 방법
WO2012062858A1 (en) * 2010-11-12 2012-05-18 Asml Netherlands B.V. Metrology method and apparatus, lithographic system and device manufacturing method
EP2694983B1 (en) * 2011-04-06 2020-06-03 KLA-Tencor Corporation Method and system for providing a quality metric for improved process control
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
JP5992110B2 (ja) * 2012-11-05 2016-09-14 エーエスエムエル ネザーランズ ビー.ブイ. ミクロ構造の非対称性を測定する方法および装置、位置測定方法、位置測定装置、リソグラフィ装置およびデバイス製造方法
US10242290B2 (en) * 2012-11-09 2019-03-26 Kla-Tencor Corporation Method, system, and user interface for metrology target characterization
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9341769B2 (en) 2012-12-17 2016-05-17 Kla-Tencor Corporation Spectral control system
US9512985B2 (en) 2013-02-22 2016-12-06 Kla-Tencor Corporation Systems for providing illumination in optical metrology
US9910953B2 (en) * 2013-03-04 2018-03-06 Kla-Tencor Corporation Metrology target identification, design and verification
WO2014138522A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
KR102124204B1 (ko) * 2013-08-07 2020-06-18 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US9518916B1 (en) * 2013-10-18 2016-12-13 Kla-Tencor Corporation Compressive sensing for metrology
WO2015089231A1 (en) * 2013-12-11 2015-06-18 Kla-Tencor Corporation Target and process sensitivity analysis to requirements
US10365230B1 (en) * 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
WO2017099843A1 (en) * 2015-12-08 2017-06-15 Kla-Tencor Corporation Control of amplitude and phase of diffraction orders using polarizing targets and polarized illumination

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120022836A1 (en) * 2010-07-22 2012-01-26 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
TW201314174A (zh) * 2011-06-20 2013-04-01 Tokyo Electron Ltd 利用光學臨界尺寸計量之結構分析用光學參數模型之最佳化方法
TW201329417A (zh) * 2011-10-31 2013-07-16 Tokyo Electron Ltd 用於計量之以流程變異為基礎的模型最佳化
TW201346214A (zh) * 2012-03-28 2013-11-16 Tokyo Electron Ltd 基於光譜靈敏度之模型優化方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology

Also Published As

Publication number Publication date
JP2017537317A (ja) 2017-12-14
CN107078074B (zh) 2021-05-25
SG11201703585RA (en) 2017-06-29
TW202018836A (zh) 2020-05-16
WO2016086056A1 (en) 2016-06-02
US10831108B2 (en) 2020-11-10
KR102269514B1 (ko) 2021-06-25
CN107078074A (zh) 2017-08-18
JP2022065040A (ja) 2022-04-26
JP6770958B2 (ja) 2020-10-21
KR20170088403A (ko) 2017-08-01
IL251972A0 (en) 2017-06-29
JP7023337B2 (ja) 2022-02-21
CN112698551A (zh) 2021-04-23
TW201633419A (zh) 2016-09-16
US20160313658A1 (en) 2016-10-27
IL251972B (en) 2022-03-01
JP2020201293A (ja) 2020-12-17
CN112698551B (zh) 2024-04-23
TWI711096B (zh) 2020-11-21

Similar Documents

Publication Publication Date Title
TWI719804B (zh) 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測
TWI731038B (zh) 光學計量之準確度提升
TWI631314B (zh) 利用光學臨界尺寸(ocd)計量之結構分析用於光學參數模型之最佳化方法、非暫時性之機器可存取儲存媒體及用以產生所模擬繞射信號以利用光學計量判定用以在晶圓上製造結構之晶圓塗覆的程序參數之系統
KR101281301B1 (ko) 산란 측정 계측 대상물 설계 최적화
TWI733150B (zh) 多重圖案化參數之量測
TWI631309B (zh) 用於光學度量衡之高度相關參數的相關性之動態移除
TWI639060B (zh) 自散射量測移除製程變化相關之不準確
KR20160011654A (ko) 파라미터 추적을 위한 계측 시스템 최적화
CN106796105A (zh) 多重图案化工艺的度量
WO2015089231A1 (en) Target and process sensitivity analysis to requirements
TW201432482A (zh) 對於晶圓響應之數値模擬中之連續極限的解析延拓
Figueiro et al. Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction