TWI717690B - Planarization for semiconductor device package fabrication processes - Google Patents

Abstract

A method of electronic device package fabrication includes dispensing a planarizing liquid into a region between adjacent features that protrude from a substrate. The planarizing liquid is then processed to provide a hardened, substantially solid material in the region between adjacent features. In some examples, the planarizing liquid can be a dielectric material used in the formation of multilevel redistribution layers or a packaging resin material used for packaging semiconductor chips. A planarization apparatus of an example includes a substrate support, a liquid dispensing system configured to dispense the planarizing liquid onto the substrate, a hardening system for hardening the planarizing liquid, and a planar element system to press into the planarizing liquid.

Description

Used for the planarization of semiconductor component packaging manufacturing process

The disclosure of this case generally relates to a semiconductor device packaging manufacturing method and equipment used for semiconductor device packaging manufacturing.

The packaging of semiconductor components includes various steps, in which a photopatternable material is deposited as a layer on an uneven surface. For example, in certain stages of manufacturing, photo-patternable dielectric materials (such as polyimide materials) are used to form the redistribution layer (RDL), which is used to fabricate everything from wafer surface contacts to ball grid arrays. (BGA) Wiring connection of solder pads. Generally speaking, due to the limitation of the achievable depth of focus (DOF) in the exposure process, the photolithography patterning process is sensitive to topographic effects, such as the difference in the height or thickness of the pattern layer. Due to the inability to sufficiently planarize the topographical features existing in some devices, the planarization process involving only spin-coated materials is considered unsuitable for the expected patterning and packaging requirements of future devices.

In one embodiment, a method for manufacturing an electronic component package includes: dispensing a planarizing liquid into an area between a plurality of adjacent features protruding from a substrate; and processing the planarizing liquid The flattening liquid is hardened to form a substantially solid material in the area between the adjacent features.

In another embodiment, a method for manufacturing an electronic component package includes: positioning a dry patterned film in an area between a plurality of adjacent features protruding from a substrate, and pressing a flat component onto the substrate On the dry patterned film and heating the dry patterned film to form and planarize a flowable material; and process the flowable material to harden the flowable material, and in the region between the adjacent features Form a substantially solid material.

In yet another embodiment, a planarization device includes: a substrate support on which the substrate can be placed; and a liquid dispensing system configured to dispense the planarization liquid to an area where the area is located from Between a plurality of adjacent features protruding from the substrate; and a hardening system for hardening the flattening liquid to form a substantially solid material in the area between the adjacent features.

It should be understood that the foregoing general description and the following detailed description are only exemplary, and are intended to provide an overview or framework for understanding the essence and characteristics of the scope of the patent application. The accompanying drawings are incorporated to provide further understanding, and these drawings are incorporated into this specification and constitute a part of this specification. The drawings illustrate exemplary embodiments and, together with the description, serve to explain the principles and operations of various embodiments.

Therefore, the above-mentioned features of the disclosure of the case can be understood in detail, and a more specific description of the disclosure of the case briefly summarized above can be obtained by referring to the embodiments (some of which are illustrated in the accompanying drawings). However, it should be noted that the accompanying drawings only illustrate certain embodiments, and therefore should not be regarded as limiting the scope of the disclosure in this case, and the scope of the disclosure in this case may cover other equivalent embodiments.

To facilitate understanding, the same element symbols are used whenever possible to denote substantially the same elements that are common in the drawings. It is considered that the elements and features disclosed for any one embodiment can be advantageously incorporated into other embodiments without repeating them.

Additional features and advantages will be proposed in the following detailed description, and to a certain extent, those with ordinary knowledge in the technical field to which the invention pertains can be understood from this description, or the technical field to which the invention pertains Generally, the knowledgeable person can realize the additional features and advantages by implementing the embodiments described herein (including the detailed description below, the scope of patent application, and the accompanying drawings).

FIG. 1 schematically depicts the planarization problems encountered in various aspects of semiconductor device packaging manufacturing. Generally, the feature 10 and the feature 20 are disposed on the surface 30 below and adjacent to each other by a distance d1. The features 10 and 20 can be semiconductor dies, interconnecting elements, or any structures that cause uneven terrain locally or globally. The underlying surface 30 can be a substrate, a semiconductor die, an interconnection element exposed on the redistribution layer, or any substrate. The height of the feature 10 from the lower surface 30 is the height h1. The height of the feature 20 from the surface 30 below is the height h2. In general, the heights h1 and h2 are arbitrary values. In many cases, the height h1 and the height h2 are substantially equal to each other, but this is not required. In some examples, the heights h1 and h2 are each on the order of micrometers (μm) or greater, for example, each is 1-10 microns. The distance d1 is arbitrary, but may be on the order of millimeters (mm) or greater in some examples, for example, about 5-15 mm. In other examples, the size of the distance d1 may be micrometers to tens of micrometers, for example, 1 micrometer to 50 micrometers.

In general, another device layer (or semiconductor wafer) will be formed over features 10 and 20, stacked, or otherwise configured in other ways. As part of forming another device layer in a conventional manufacturing process, a deposition process intended to achieve a flat topography, such as a spin coating technique involving polymer-based material 40, can be used. However, it has been found that this spin coating-only technique provides incomplete or otherwise unsatisfactory planarization results, depending on the actual dimensions of the distance d1, height h1, and height h2, as well as other parameters, such as polymer type The viscosity of the material 40 and the rotation speed and angular acceleration during the spin coating technique. The unsatisfactory flattening is represented by the step height h3 in Figure 1. The step height h3 is the height from one of the feature 10 and the feature 20 to the surface 50 of the polymer material 40.

A larger value of the step height h3 tends to complicate subsequent manufacturing steps. This is especially true when multiple layers are to be formed on one another in a multi-level RDL manufacturing process. When multiple layers are stacked on top of each other, differences in flatness may accumulate, making subsequent layers in the stack difficult or impossible to form and pattern properly. The embodiments described herein (shown in FIGS. 2 to 8) provide a step height h3 of about 0.1 μm to 1 μm, for example, 0.3 μm.

In a specific embodiment, a method for manufacturing an electronic component package includes distributing a planarizing liquid into an area between adjacent features protruding from a substrate, pressing the planar element onto the substrate, and reshaping the planarizing liquid , To fill just between adjacent features, and process the flattening liquid while the flat element is above, so that the flattening liquid hardens, and a substantially solid material is formed in the area between the adjacent features, And remove the flat element after hardening the flattening liquid.

Figure 2 depicts a planarization method according to the first example. In this first example, a plurality of dies 100 are arranged on the carrier substrate 200 at a distance d1. The carrier substrate 200 may be a frame element. In this case, an adhesive layer (not specifically depicted in the figure) may be required to attach the die 100 to the carrier substrate 200. The frame element can be, for example, a glass substrate with a blind square cavity, and the die 100 can be placed in the cavity. As depicted in the figure, there are trench regions 220 between adjacent dies 100. The liquid dispenser 230 is provided to dispense droplets of the polymer material 240 at various positions in the groove region 220. Through the movement of the liquid dispenser 230 relative to the carrier substrate 200, the movement of the carrier substrate 200 relative to the liquid dispenser 230, or the combination of the movement of the liquid dispenser 230 and the carrier substrate 200, droplets can be dispensed at various positions .

In this first example, droplets of polymer material 240 are dispensed into the area between adjacent dies 100. In addition, in this first example, droplets without polymer material 240 are directly dispensed on the upper surface of any die 100. The droplets of the polymer material 240 dispensed into the regions between adjacent die 100 may include a matrix of the droplets 260. After the droplets of the polymer material 240 have been dispensed, the covering element 250 is applied to the surface of the substrate 200 on the side of the die 100 to planarize the polymer material 240. While the covering element 250 is positioned on the substrate, pressure, heat and/or UV radiation are applied to cure/harden the polymer material 240.

After the pressure curing/hardening of the polymer material 240, the covering element 250 can be removed to leave the planarized polymer material 240 in the trench area 220. By controlling the dispensing amount, size, and/or position of the droplets of the polymer material 240, the upper surface of the die 100 can be kept free of the polymer material 240. Furthermore, in some examples, the dispensing volume of the polymer material 240 can be greater than the volume of the area between the die 100, as long as the height of the steps generated at the edge of the die is reduced.

The covering element 250 can be any material that is substantially flat in the relevant contact area. The covering element 250 can be a hard opaque material, a hard transparent material, a soft opaque material, or a soft transparent material. For example, the covering element 250 can be metal, glass, polymer, or a combination of these materials.

In a specific example, the distance d1 is about 10 mm, the liquid dispenser 230 is an inkjet head dispenser, the polymer material 240 is a polyimide material, and the covering element 250 is pressed to the substrate at about 5 bar. Contact and heat the carrier substrate 200 to about 150°C before removing the covering element 250. In other examples, the contact pressure may be about 1 bar to about 15 bar, and the temperature may be from about 75°C to about 175°C. In some examples, a transparent or at least partially transparent material is used for the covering element 250, and light can pass through the covering element 250 to cure and harden the polymer material 240. In a specific example, the light can be ultraviolet light, such as light provided by a mercury arc lamp or an excimer laser source. The height of the step, that is, the height from one of the die 100 to the top surface of the polymer material 240, is about 0.1 micrometer to 1 micrometer, such as 0.3 micrometer.

Fig. 3 depicts a planarization method according to a second example. This second example can be used to form a first RDL dielectric layer, more specifically, to form a substantially flat first RDL layer. In the second example, a plurality of dies 100 are arranged on the carrier substrate 300 at a distance d1. The liquid dispenser 330 is configured to dispense the polymer material 340 to various positions in the groove region 220 between adjacent dies 100.

In this second example, no polymer material 340 is directly dispensed from the liquid dispenser 330 on the upper surface of any die 100. However, in other examples, some amount of polymer material 340 can be directly dispensed on one or more of the die 100, but in these other examples, the polymer material is directly dispensed on the upper surface of the die 100 The amount of 340 may be less than the amount of polymer material 340 dispensed into the groove area 220.

Through the movement of the liquid dispenser 330 relative to the carrier substrate 300, the movement of the carrier substrate 300 relative to the liquid dispenser 330, or the combination of the movement of the liquid dispenser 330 and the carrier substrate 300, droplets can be dispensed at various positions .

After the polymer material 340 has been dispensed in the trench region 220, the substrate 300 undergoes a spin process, such as a spin coating process of hundreds to thousands of RPM (revolutions per minute). It has been found that prior to the spin process, the polymer material 340 is preferentially dispensed to the trench region 220, resulting in a reduction in the substantial step height, which cannot be provided by the conventional spin coating process. In the conventional spin coating process, the polymer The material may simply form a layer similar to the topography of the surface below.

3 depicts the liquid dispenser 330 applying additional polymer material 345 (also referred to as overcoat spraying) to the substrate 300 while the substrate 300 is rotating. In some examples, depending on the relative volume of the trench region 220 and the amount of polymer material 340 dispensed before the spinning process, the additional application of the polymer material 345 during the spinning process may be optional or unnecessary as appropriate. . The height of the step, that is, the height from one of the die 100 to the top surface of the polymer material 340, is about 0.1 micrometer to 1 micrometer, such as 0.3 micrometer. The pressing or molding by the covering element 250 is not depicted in FIG. 3, but in other examples, the second example process can be combined with the first example process in whole or in part. In some examples, the polymer material 345 may be a photo-patternable material (for example, photoresist), and may maintain the ability to be photo-patterned in the photolithography process after the planarization process has been completed.

In a specific example, the distance d1 is about 10 mm, the liquid dispenser 330 is a spray nozzle, and the polymer material 340 and/or polymer material 345 is a polyimide material that has been diluted with a solvent (the solvent such as N-form Pyrrolidone (NMP) or the like) to reduce the viscosity, so that the resulting solution can be passed through a spray nozzle and/or to facilitate spin coating.

In some examples, the liquid dispenser 330 may include different nozzles or liquid output ports for initially dispensing the polymer material 340 to the groove area 220, and for dispensing the polymer material 345 later. For spin coating process. In other examples, the liquid dispenser 330 may use the same nozzle or liquid output port to dispense the polymer material 340 into the groove area and for the subsequent spin coating process.

In some examples, the polymer material 345 can be planarized by techniques other than spin coating, such as screen printing, doctor blade coating, or similar techniques. Generally, the polymer material 345 can be baked to a temperature after the planarization process, which is lower than the temperature at which the polymer material 345 will substantially lose its ability to be photo-patterned.

Fig. 4 depicts a planarization method according to the third example. In this third example, a plurality of dies 100 are arranged on the carrier substrate 400 at a distance d1. The inkjet nozzle 430 is used to dispense the planarizing material 440 into the groove area 220. Generally, the planarizing material 440 is a curable material with low viscosity and low surface tension, which expands in the groove region 220 to provide a substantially flat upper surface.

The exposed surface of the planarization material 440 and/or the trench region 220 can be modified or selected so that the planarization material 440 and the exposed surface of the trench region 220 have a low contact angle. Therefore, the planarizing material 440 will flow in the trench area 220, as depicted in FIG. 4.

After the planarization material 440 flows in the trench region 220, the planarization material can be subjected to a curing/hardening process, such as exposure to heat or ultraviolet light. The amount of the planarizing material 440 dispensed in the trench region 220 and the dispensing position in the trench region 220 can be selected so that the trench region 220 is substantially filled with the planarizing material 440. In some examples, only partially filling the trench region 220 with the planarization material 440 may be sufficient to reduce the step height between the edge of the die 100 and the bottom of the trench region (the upper surface of the planarization material).

After the planarization material 440 is cured/hardened, an additional planarization process may be performed to achieve better or complete planarization as needed. For example, the process of the third example can be combined with one or both of the process of the first example or the process of the second example. The height of the step, that is, the height from one of the dies 100 to the top surface of the planarization material 440, is about 0.1 μm to 1 μm, for example, 0.3 μm.

Generally, the planarization material 440 can be the following material: any material that can planarize the flow in the trench region 220 under compatible manufacturing process conditions (for example, temperature and pressure conditions). In some examples, the planarization material 440 can be UV-curable urethane-based acrylate, UV-curable polyester-epoxy, or UV-curable epoxy-based Acrylate. In some examples, the planarization material 440 may preferably have a viscosity of about 13 to about 15 centipoise (cP) at 21°C. The planarizing material 440 may also be selected to provide relatively small volume shrinkage after curing.

In a specific example, the distance d1 is about 10 mm, the inkjet nozzle 430 is one of the multiple nozzles in an inkjet head type device, and the planarization material 440 is a urethane-based acrylate material, which can be used in UV curing at 21°C with a viscosity of about 14.5cP.

Figure 5 depicts a fourth example of the planarization process. This fourth example can be used to form an RDL dielectric layer, more specifically, to form a substantially flat RDL layer. In this fourth example, a plurality of wires 510 are arranged on the substrate 500. The placement and spacing between adjacent wires 510 on the substrate 500 are generally set according to the requirements of circuit design, component packaging parameters, and manufacturability. Similarly, the individual width of the wiring 510 is set according to the requirements of circuit design, component packaging parameters, and manufacturability. RDL wiring patterns are not limited to simple line/space patterns, but may include other pattern elements, such as fan-out arrays, serpentine structures, comb structures, contact pads, interlayer interconnections, metal pillars, circuit elements, or the like . The number of RDL layers in the final device is usually between 2 and 4.

In at least some regions of the RDL layer, the interval d2 between adjacent wires 510 may be about 1 micrometer to several tens of micrometers, for example, about 1 micrometer to about 50 micrometers. The cross-sectional width of each wiring 510 may have a similar size. In the manufacture of the RDL layer, the height of the step between the upper surface of the metal layer and the upper surface of the dielectric layer may be about 5 to about 10 microns. Because multiple RDL layers are to be stacked one on top of the other, unevenness in the lower RDL can adversely affect the upper layer. In connection with this, the ability to perform patterning associated with the manufacturing of the RDL layer may be adversely affected by the non-planar layer because the photolithography tool used for patterning has a limited depth of focus (DOF).

In the fourth example, the liquid dispenser 530 dispenses the polymer material 540 onto the substrate 500. The polymer material 540 is dispensed to cover the wiring 510 and fill the space 515 between the wiring 510. As depicted, the polymer material 540 does not have a flat upper surface at the beginning, but provides a conformal coating, wherein the upper surface of the polymer material 540 corresponds to the topography of the substrate 500 below, that is, the wiring 510 and the space 515 The topographic pattern formed together. The polymer material 540 that has just been dispensed may optionally undergo a spin coating process to distribute the polymer material on the substrate 500 as appropriate. In some examples, the polymer material may have a viscosity of about 1000 centipoise (cP) or higher at 25°C.

In the subsequent steps, the flat element 550 is placed in contact with the polymer material 540. The flat element 550 can be pressed into the polymer material 540 with sufficient force, so that the polymer material 540 conforms to the flat element 550. In some examples, the flat element 550 can be heated and/or the substrate 500 can be heated to facilitate the molding of the polymer material 540.

The pressing and/or heating can be performed under low pressure or vacuum conditions to limit the formation of voids and/or promote the removal of voids in the polymer material 540, which may be caused by trapping or entraining gas in the polymer material 540 . After being pressed by the flat element 550, the flat element 550 is removed, leaving the flattened upper surface of the polymer material 540. Generally, in this example, UV exposure is not used to cure/harden the polymer material 540, because the planarized polymer material 540 will be used as a photo-patternable dielectric material for the formation of subsequent RDLs Floor. In particular, the planarized polymer material 540 will undergo a photolithography process using UV light to selectively harden multiple portions of the polymer material 540 according to a mask pattern corresponding to the desired wiring pattern of the subsequent RDL layer. Then, the unexposed/hardened part of the polymer material 540 is removed by wet development in a solvent or the like.

If the polymer material 540 remains photopatternable after the planarization process, the heating during pressing against the planar element 550 must be limited with respect to the applied temperature and time to prevent the entire polymer material 540 from being able to undergo UV Cure/harden before patterning.

In a specific example, the polymer material 540 is a light-sensitive polyimide material. During the planarization process, it is heated to a maximum temperature of about 120° C. to about 160° C., the pressing time is about 3 minutes to about 12 minutes, and the applied pressure is between about 5 bar and about 10 bar.

In some examples, the flat element 550 can be a flexible silicone polymer material (such as polydimethylsiloxane (PDMS)), a hard polymer material (such as fluorinated ethylene propylene (FEP) or ethylene four Fluoroethylene (ETFE)), glass plate, metal plate, or a combination of the above materials.

The liquid dispenser 530 can be a spray nozzle, an inkjet nozzle, a plurality of such elements, or a combination of such elements.

FIG. 6 depicts a planarization process according to an exemplary use in manufacturing a multilayer RDL structure. The metal feature 610 is formed on the wafer substrate 600. The photo-patternable dielectric material 630 is applied on the substrate 600. While the substrate 600 is under vacuum, the planar mold 650 is pressed into the photo-patternable dielectric material 630. As depicted in the figure, vacuum or low pressure conditions facilitate the elimination of voids from the photo-patternable dielectric material 630.

In a subsequent step, a part of the photo-patternable dielectric material 630 is removed in the photolithography process. The planarization process with mechanical planarization realizes the patterning of metal pillars with high aspect ratio. In the conventional RDL manufacturing process, the non-flat surface of the photo-patternable dielectric material 630 above the metal feature 610 (such as in the state of the device depicted in FIG. 6 before being mechanically pressed) will make the photolithography process complicated This is due to, for example, the limitation of the depth of focus of the photolithography tool.

FIG. 7 depicts a planarization process according to an example for forming a via-on-via stack structure in a multilayer RDL structure. The planarization process described above in conjunction with FIG. 6 is repeated to form an additional RDL layer. Since the flatness of the photopatternable dielectric material 630 is improved, the photolithography process of the higher RDL layer can be performed with higher layer-to-layer alignment accuracy, thereby allowing the formation of the stacked via structure 710.

Fig. 8 depicts a planarization method according to the fifth example. In this example, a plurality of dies 100 are arranged on the carrier substrate 800 at a distance d1. The carrier substrate 800 may be a frame element. In this case, an adhesive layer (not specifically depicted in the figure) may be required to attach the die 100 to the carrier substrate 800. The frame element can be, for example, a glass substrate having a closed square cavity, and the die 100 can be placed in the cavity. As depicted in the figure, there are trench regions 220 between adjacent dies 100. The dry patterned film 850 is located in the trench area 220. The dry patterned film 850 can be positioned in the trench region 220 described further herein (shown in FIGS. 9 and 10) by a handling system. The dry patterned film 850 can be positioned in the trench area 220 by disposing the dry patterned film 850 on the cover element 250 so that the dry patterned film 850 is aligned in the trench area 220. The covering element 250 is applied to the surface of the substrate 800 on the side of the die 100, and the dry patterned film 850 is positioned in the trench region 220.

The dry patterned film 850 includes a material that can flow when exposed to a temperature of about 90°C to about 100°C. After the dry patterned film 850 is positioned in the trench region 220, the dry patterned film 850 is pressurized and heated. When the cover element 250 is applied to the surface of the substrate 800 on the side of the die 100, the substrate support (shown in FIGS. 9 and 10) may be heated to expose the dry patterned film 850 to form a flowable material 852 to flatten The flowable material 852 time. Pressure, heat, and/or UV radiation are applied to cure/harden the flowable material 852 while the cover element 250 is positioned on the substrate 800. The flowable material 852 forms a solid material 854 in the trench area 220. The height of the step, that is, the height from one of the dies 100 to the top surface of the solid material 854, is about 0.1 μm to 1 μm, for example, 0.3 μm. In a specific example, the dry patterned film 850 is composed of epoxy material with silica filler. Laser ablation is applied to pattern the blanket dry film.

FIG. 9 depicts a planarization device 900. The planarization apparatus includes a substrate support 910, and the substrate 920 can be placed on the substrate support 910. The substrate support 910 may be a vacuum chuck or the like for supporting the substrate 920 during various processing steps. The transfer system 960 can be incorporated to place and remove the substrate 920 from the substrate support 910. The mobilization system 960 can also be incorporated to position the dry patterned film 850 in the trench area 220.

In some examples, the movement system 960 may include a robotic arm or other mechanical device for moving the substrate 920 to the substrate support 910. In some examples, the transfer system 960 may include a loading gate or the like. The substrate support 910 is inside the chamber 970 or is movable if not so as to be located within the chamber 970 during certain operating conditions.

In some examples, the chamber 970 (or parts of the chamber) may be controllable to have an internal pressure other than atmospheric pressure, such as vacuum conditions. Similarly, the chamber 970 (or parts of the chamber) can be operated with a composition other than standard air, for example, a low oxygen, pure nitrogen, or argon atmosphere can be provided in the chamber 970.

The liquid dispensing system 935 of the planarization device includes a dispensing point 930. The liquid dispensing system 935 stores materials such as polymer material 240, polymer material 340, planarizing material 440, polymer material 540, or the like. The liquid stored in the liquid dispensing system 935 can be referred to as the planarization layer precursor material 940.

The dispensing point 930 is an inkjet nozzle, an inkjet head including a plurality of inkjet nozzles, a spray nozzle, a spray head including a plurality of spray nozzles, or substantially any such device or port: from liquid dispensing The liquid of the system 935 can be dispensed from the device or port to any device or port in the chamber 970. The dispensing point 930 can be, for example, a liquid dispensing head, a droplet ejector, a spray nozzle, or a plurality of these components, or a combination of these components. The dispensing point 930 can be moved in the chamber 970 so that the liquid can be dispensed to a specific part of the substrate 920. For example, the liquid dispensing system 935 may include a mechanism for moving the dispensing point 930 in an X-Y coordinate system that corresponds to the plane of the upper surface of the substrate 920.

In addition to or instead of a mechanism for moving the dispensing point 930 relative to the substrate 920, the substrate support 910 can include or be attached to a mechanism for moving the substrate 920 relative to the dispensing point 930. The substrate support 910 may also include a rotation mechanism that allows the substrate 920 to rotate. In some examples, the rotation mechanism of the substrate support 910 may allow spin coating type processing at a speed of several hundred to several thousand RPM.

The substrate support 910 and/or the chamber 970 can: heat the substrate 920 for the purpose of baking, curing, and/or hardening at least one of the planarization layer precursor material 940; exposing the dry patterned film 850 to approximately A temperature of 90°C to about 100°C to form a flowable material 852; and baking, curing, and/or hardening the flowable material 852. Optionally, the planarization apparatus 900 may include an exposure system 980 for at least one of the following: supplying light to the substrate 920 to cure/harden one of the planarization layer precursor materials 940 The dry patterned film 850 is exposed to a temperature of about 90° C. to about 100° C. to form a flowable material 852; and, curing/hardening the flowable material 852. The planarization device 900 can be connected to a substrate processing track system, a cluster type processing device, or a multifunctional substrate processing device, or the planarization device 900 can be a substrate processing track system, a cluster type processing device, or a multifunctional substrate processing device. One integrated part.

The exposure system 980 may include various elements required to provide light to the substrate 920, such as mirrors, lenses, liquid light guides, optical filters, or the like. The exposure system 980 may include or be attached to a light source, such as a UV lamp, IR heating lamp, or the like. The exposure system 980 can move within the chamber 970. In some examples, the chamber 970 may incorporate a window portion that allows the exposure system 980 to supply light to the sealed chamber 970 from the outside. In some examples, the exposure system 980 may be optional, and the hardening of the planarizing liquid can be provided by heating (such as by the chamber 970 or the substrate support 910). The hardening system in the planarization apparatus 900 can be regarded as corresponding to at least one of the following: a heating element in the chamber 970, a heating element in the substrate support 910, and an exposure system 980. For example, the heating element in the substrate support 910 heats the substrate 920 to expose the dry patterned film 850 to a temperature of about 90° C. to about 100° C. to form a flowable material 852 and cure/harden the flowable material 852.

Figure 10 depicts a planarization device 1000. Generally, the planarization device 1000 is similar to the planarization device 900 described above, with the difference that a planar element system 1010 is added. The common components between the two examples are given the same component symbols in the drawings. The flat element system 1010 includes a flat element support 1015 for fixing the flat element 1020. The flat element 1020 is a flat mold element, an unpatterned mold element, a plate element, or the like.

Generally, the flat element 1020 corresponds in structure and function to the cover element 250 and/or the flat element 550, as described in the above example. The flat element system 1010 includes a mechanism for placing the flat element 1020 in contact with the substrate 920. The flat element system 1010 presses the flat element 1020 into the substrate 920 at a controllable pressure level.

The liquid dispensing system 935 and the exposure system 980 are drawn in a partially stowed position in FIG. 10 so that the movement of the flat element system 1010 and/or the substrate support 910 is not hindered. However, in some examples, the chamber 970 may be divided or provided in separate parts, so that the dispensing of the liquid can be performed in one part of the chamber 970, and the pressure flattening can be in the chamber 970 In another part. The substrate support 910 can move (or be moved) between different parts or partitions of the chamber 970. Similarly, in some examples, the liquid dispensing system 935 may be completely omitted from the planarization device 1000, and the dispensing of the liquid may be specifically connected to the planarization device 1000 (or if not connected to the planarization device 1000). Associated) in the planarization device 900. Likewise, the exposure by the exposure system 980 (when provided) may be performed in different parts or partitions of the chamber 970.

The flat element system 1010 may also provide a plurality of transparent or transmissive parts that allow one of the flattening layer precursor material 940 and the flowable material 852 to be photocured or photocured through the flat element 1020 (or other components) By.

The flat element system 1010 may include heating elements to heat the flat element 1020 before or during pressing into the substrate. The flat element system 1010 may incorporate an X-Y moving mechanism for positioning the flat element 1020 relative to the substrate 920. Theta (θ), plane tilt, or other movement control can also be set in the flat element system 1010.

The compression between the substrate 920 and the flat element 1020 can be achieved by the Z-direction movement provided by either or both of the flat element system 1010 or the substrate support 910. In some examples, the pressure can be applied by providing increased gas pressure, which is supplied to the back side of the flat element 1020 and/or the substrate 920. The planar element 1020 may have substantially the same planar area size as the substrate 920, so that the entire substrate 920 is planarized at the same time. Alternatively, the flat element 1020 may have a size smaller than the planar area of the substrate 920, so that only a part of the substrate 920 is planarized at a time. In some examples, the planar area size of the flat element 1020 may be larger than that of the substrate 920, so that a part of the flat element 1020 can overhang on the outermost edge of the substrate 920 during the pressing.

The dry patterned film 850 can be arranged on the planar element 1020 by the mobilization system 960 so that the dry patterned film 850 is aligned with the trench region 220. The flat element system 1010 presses the flat element 1020 into the substrate 920 at a controllable pressure level to position the dry patterned film 850 in the trench area 220.

Generally, for the purpose of at least one of baking, curing, and hardening the planarization layer precursor material 940, the dry patterned film 850 is exposed to form the flowable material 852, and the flowable material is baked, cured, and hardened At least one of 852 can be performed by heating provided by any one of the chamber 970, the substrate support 910, or the flat element system 1010 (or a combination of these aspects). In some examples where one of the planarization layer precursor material 940 and the flowable material 852 can be cured with light, the exposure system 980 can be used for curing. The hardening system in the planarization device 1000 can be regarded as corresponding to at least one of the following: heating elements in the chamber 970, heating elements in the substrate support 910, heating elements and/or light curing sources in the planar element system 1010, And exposure system 980.

Although the foregoing content is directed to specific embodiments of the content disclosed in this case, it should be understood that these embodiments are merely illustrative of the principles and applications. Therefore, it should be understood that various modifications may be made to the illustrative embodiments to provide other embodiments without departing from the spirit and scope of the disclosure of the present case as expressed by the scope of the appended application.

10‧‧‧Features 20‧‧‧Features 30‧‧‧The surface below 40‧‧‧Polymer materials 50‧‧‧surface 100‧‧‧grains 200‧‧‧Carrier substrate 220‧‧‧Groove area 230‧‧‧Liquid dispenser 240‧‧‧Platinized polymer material 250‧‧‧covering element 260‧‧‧droplets 300‧‧‧Carrier substrate 330‧‧‧Liquid dispenser 340‧‧‧Polymer 345‧‧‧Polymer 400‧‧‧Carrier substrate 430‧‧‧Inkjet nozzle 440‧‧‧Planarization material 500‧‧‧Substrate 510‧‧‧Wiring 515‧‧‧Space 530‧‧‧Liquid dispenser 540‧‧‧Polymer 550‧‧‧Flat components 600‧‧‧Chip substrate 610‧‧‧Metal features 630‧‧‧Photopatternable dielectric material 650‧‧‧Flat mold 710‧‧‧Structure 800‧‧‧Carrier substrate 850‧‧‧Dry patterned film 852‧‧‧flowable material 854‧‧‧Solid materials 900‧‧‧Planarization equipment 910‧‧‧Substrate support 920‧‧‧Substrate 930‧‧‧distribution point 940‧‧‧Planarization layer precursor material 960‧‧‧Movement system 970‧‧‧ Chamber 980‧‧‧Exposure System 1000‧‧‧Planarization equipment 1010‧‧‧Flat component system 1015‧‧‧Flat component support 1020‧‧‧Flat components

FIG. 1 schematically depicts the planarization problem in the manufacturing process of electronic component packaging.

FIG. 2 depicts a trench filling method for planarization according to the first example.

Figure 3 depicts a multilayer method for stacking a flat redistributed dielectric layer over a patterned surface according to a second example.

FIG. 4 depicts a trench filling method for planarization according to a third example.

Fig. 5 depicts a planarization method according to the fourth example.

FIG. 6 schematically illustrates the planarization process in the manufacturing process of the redistributed dielectric layer over the patterned surface of the high aspect ratio copper pillar.

FIG. 7 schematically illustrates the redistribution layer manufacturing process including via-on-via stacking.

FIG. 8 depicts a trench filling method for planarization according to a fifth example.

Figure 9 depicts a planarization device according to an embodiment.

Figure 10 depicts a planarization device according to another embodiment.

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100‧‧‧grains

200‧‧‧Carrier substrate

220‧‧‧Groove area

230‧‧‧Liquid dispenser

240‧‧‧Platinized polymer material

250‧‧‧covering element

260‧‧‧droplets

Claims (20)

A method for manufacturing an electronic component package includes: dispensing a planarizing liquid into an area located between a plurality of adjacent features protruding from a substrate, and directly distributing no planarizing liquid to the regions. On the upper surface of one of the features; and processing the flattening liquid to harden the flattening liquid to form a substantially solid material in the area between the adjacent features. The method of claim 1, wherein the adjacent features are a plurality of semiconductor wafers; and the planarizing liquid is an encapsulating resin precursor. The method according to claim 1, wherein the planarizing liquid is an epoxy resin precursor. The method according to claim 1, wherein the distance between the adjacent features is greater than 1 mm. The method of claim 1, wherein the treatment to harden the planarizing liquid includes: exposure to ultraviolet light. The method according to claim 1, wherein the treatment to harden the flattening liquid includes heating. The method of claim 1, wherein the planarizing liquid is dispensed into the area between adjacent features through a spray nozzle. The method described in claim 1, wherein the allotment enters multiple The volume of the planarizing liquid in the area between adjacent features is less than or equal to the volume of the area between adjacent features. The method according to claim 1, further comprising: before processing the flattening liquid for curing, dispensing an additional amount of the flattening liquid onto the substrate for a spin coating process. The method according to claim 1, further comprising: pressing a flat element into the substrate before processing the flattening liquid for hardening. The method according to claim 10, further comprising: removing the flat element from the substrate after processing the flattening liquid for hardening. The method according to claim 1, wherein the planarizing liquid is a photopatternable polyimide material. The method according to claim 1, wherein the flattening liquid has a viscosity of less than 15 centipoise at 21 degrees Celsius. The method of claim 1, wherein the flattening liquid has a viscosity of at least 1000 centipoise at 25 degrees Celsius. A method of manufacturing an electronic component package, comprising: positioning a dry patterned film in an area between a plurality of adjacent features protruding from a substrate; Pressing a flat element onto the dry patterned film on the substrate, and heating the dry patterned film to form and planarize a flowable material; and process the flowable material to harden the flowable material, and A substantially solid material is formed in the area between the adjacent features. The method of claim 15, wherein the height from one of the adjacent features to a top surface of the substantially solid material is about 0.1 micrometer to 1 micrometer. The method of claim 15, wherein the dry patterned film includes a material that is flowable when exposed to a temperature of about 90 degrees Celsius to about 100 degrees Celsius. A planarization device includes: a substrate support on which a substrate can be placed; a liquid dispensing system configured to dispense a planarization liquid to a plurality of adjacent features protruding from the substrate In an area between the two, but not directly dispensing the flattening liquid onto an upper surface of the features; and a hardening system for hardening the flattening liquid, and between the adjacent features A substantially solid material is formed in this area. The planarization device according to claim 18, wherein: the liquid dispensing system includes an inkjet head, The hardening system includes at least one of the following: a heating element for heating the substrate; and an ultraviolet exposure system for exposing the substrate to ultraviolet light. The planarization device according to claim 18, further comprising: a planarization element system configured to press a substantially flat planar element into the planarization liquid, and remove the substantially flat planar element from the planarization liquid , Wherein the hardening system includes a heating element for heating the substrate.

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