JP2019068045A - Molding machine and method for manufacturing article - Google Patents

Abstract

To provide a technique which is advantageous to reduce an amount of using gas to be supplied to between a substrate and a mold.SOLUTION: A molding machine is arranged so as to mold a composition on a substrate with a mold. The molding machine comprises: a substrate-positioning mechanism for positioning the substrate; a mold-positioning mechanism for positioning the mold; a dispenser for putting the composition on a shot region of the substrate; and a gas-supplying unit having a gas-supplying port disposed between the dispenser and the mold-positioning mechanism, and serving to supply a gas from the gas-supplying port onto the substrate in the state of the substrate-positioning mechanism driving the substrate. The flow rate of the gas to be supplied onto the substrate by the gas-supplying unit starts to decrease in a period during which the substrate positioning mechanism drives the substrate so that the shot region where the dispenser has put the composition is moved to under the mold.SELECTED DRAWING: Figure 3

Description

The present invention relates to a molding apparatus and an article manufacturing method.

  In an imprint apparatus as one of the forming apparatuses, an imprint material is disposed on a substrate, and the pattern area of the mold is brought into contact with the imprint material to cure the imprint material. Thereby, the pattern of the pattern area of the mold is transferred to the imprint material on the substrate. The pattern area of the mold has a recess that constitutes the pattern, and when the pattern area of the mold contacts the imprint material on the substrate, the recess is filled with the imprint material. This may contribute to a reduction in throughput, as it takes a corresponding amount of time for the imprint material to be filled into the recesses of the pattern area of the mold. Therefore, by supplying a gas (for example, helium gas) having high solubility and / or diffusivity to the imprint material between the substrate and the mold, the imprint material to the recess by the gas in the recess of the pattern area of the mold The inhibition of filling can be reduced.

  In Patent Document 1, a gas supply position is disposed on a moving path for moving a shot area coated with a resin (imprint material) immediately below a mask (mold), and a shot area coated with a resin corresponds to the supply position. It is described that the supply of gas is started before passing. According to Patent Document 2, after the original plate and the substrate are relatively moved so that the shot area of the substrate is located directly below the original plate (mold), the area of the portion where the original plate and the substrate overlap in plan view is Control of the gas flow rate from the gas supply is described.

Patent No. 5828626 JP, 2015-138842, A

  The use of such gases should be reduced since such gases to be supplied between the substrate and the mold are rather expensive. However, if the amount of gas used is simply reduced, pattern defects may occur due to filling defects and the like.

  The present invention aims to provide an advantageous technique for reducing the amount of gas to be supplied between the substrate and the mold.

  One aspect of the present invention relates to a molding apparatus for molding a composition on a substrate using a mold, the molding apparatus comprising: a substrate positioning mechanism for positioning the substrate; and a mold positioning mechanism for positioning the mold. A dispenser for placing a composition on a shot area of the substrate, and a gas supply port disposed between the dispenser and the mold positioning mechanism, wherein the substrate is driven by the substrate positioning mechanism A gas supply unit for supplying a gas onto the substrate from the gas supply port in a state, and the composition of the flow rate of the gas supplied on the substrate by the gas supply unit is set by the dispenser The decrease is started during the period in which the substrate is driven by the substrate positioning mechanism so that the shot area moves under the mold.

  According to the present invention, an advantageous technique is provided to reduce the amount of gas to be supplied between the substrate and the mold.

BRIEF DESCRIPTION OF THE DRAWINGS The side view which shows typically the structure of the shaping | molding apparatus of one Embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS The top view which shows typically the structure of the shaping | molding apparatus of one Embodiment of this invention. FIG. 5 is a view showing the configuration of a gas supply unit of the first embodiment and supply control of a purge gas in one processing cycle of the first embodiment. FIG. 7 is a view showing a configuration of a gas supply unit of a second embodiment and supply control of a purge gas in one processing cycle of the second embodiment. The figure which shows the structure of the gas supply part of 3rd Embodiment, and supply control of purge gas in one process cycle of 3rd Embodiment. The figure which shows the structure of the gas supply part of 4th Embodiment, and supply control of purge gas in one process cycle of 4th Embodiment. The figure which shows a comparative example. The figure which illustrates the article manufacturing method. The figure which shows the molding method of 5th Embodiment.

The invention will now be described through its exemplary embodiments with reference to the accompanying drawings.

  1 and 2 are a side view and a plan view schematically showing the configuration of an imprint apparatus 1 according to an embodiment of the present invention. The imprint apparatus 1 arranges the imprint material IM on the substrate S, brings the imprint material IM into contact with the pattern region PR of the mold M, and cures the imprint material IM. Thereby, a pattern is formed on the substrate S. The imprint apparatus 1 can be understood as one of molding apparatuses that mold a composition (or imprint material) on a substrate S using a mold.

  As the imprint material, a curable composition (sometimes referred to as an uncured resin) which is cured by receiving energy for curing is used. As energy for curing, electromagnetic waves, heat, etc. may be used. The electromagnetic wave may be, for example, light whose wavelength is selected from the range of 10 nm or more and 1 mm or less, such as infrared light, visible light, and ultraviolet light. The curable composition may be a composition which is cured by irradiation of light or by heating. Among these, the photocurable composition which is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a nonpolymerizable compound or a solvent as required. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, a polymer component and the like. The imprint material may be disposed on the substrate in the form of droplets, or in the form of islands or films formed by connecting a plurality of droplets. The viscosity (the viscosity at 25 ° C.) of the imprint material may be, for example, 1 mPa · s or more and 100 mPa · s or less. As a material of the substrate, for example, glass, ceramics, metals, semiconductors, resins and the like can be used. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

  In the present specification and the accompanying drawings, directions are shown in an XYZ coordinate system in which a direction parallel to the surface of the substrate S is an XY plane. The directions parallel to the X, Y, and Z axes in the XYZ coordinate system are taken as the X, Y, and Z directions, and rotation around the X axis, rotation around the Y axis, and rotation around the Z axis are θX and θY, respectively. , ΘZ. The control or drive on the X axis, Y axis, and Z axis means control or drive on a direction parallel to the X axis, a direction parallel to the Y axis, and a direction parallel to the Z axis, respectively. Also, control or drive with respect to the θX axis, the θY axis, and the θZ axis relates to rotation around an axis parallel to the X axis, rotation around an axis parallel to the Y axis, and rotation around an axis parallel to the Z axis, respectively. Means control or drive. The position is information that can be specified based on the coordinates of the X axis, the Y axis, and the Z axis, and the posture is information that can be specified by the values of the θX axis, the θY axis, and the θZ axis. Positioning means controlling the position and / or attitude. Alignment may include control of the position and / or attitude of at least one of the substrate and the mold.

  The imprint apparatus 1 can include a substrate positioning mechanism SA that holds and positions the substrate S, a mold positioning mechanism MA that holds and positions the mold M, and a support mechanism 50 that supports the mold positioning mechanism MA. The substrate positioning mechanism SA and the mold positioning mechanism MA constitute a drive mechanism DM that drives at least one of the substrate S and the mold M such that the relative position between the substrate S and the mold M is adjusted. Adjustment of the relative position by the drive mechanism DM includes contact of the mold M with the imprint material IM on the substrate S and drive for separation of the mold M from the cured imprint material (pattern of the cured product) . Further, the adjustment of the relative position by the drive mechanism DM includes a drive for aligning the shot area of the substrate S and the mold M.

  Substrate positioning mechanism SA includes a substrate stage SS for holding substrate S, and a substrate driving mechanism 24 for driving substrate S by driving substrate stage SS. The substrate stage SS can include a substrate chuck 21 for holding the substrate S and a table 22 for supporting the substrate chuck 21. In addition, the substrate stage SS may include the same surface plate 23 surrounding the periphery of the substrate S. The surface of the same surface plate 23 may have substantially the same height as the surface of the substrate S. The mold positioning mechanism MA may include a mold chuck 41 for holding the mold M, and a mold drive mechanism 42 for driving the mold M by driving the mold chuck 41.

  The substrate positioning mechanism SA (substrate drive mechanism 24) has a substrate S with a plurality of axes (for example, three axes of X axis, Y axis, θZ axis, preferably X axis, Y axis, Z axis, θX axis, θY axis) , ΘZ axes) can be configured to drive. Mold positioning mechanism MA (the mold driving mechanism 42 has a mold M with a plurality of axes (eg, Z axis, θX axis, θY axis three axes, preferably X axis, Y axis, Z axis, θX axis, θY axis, It can be configured to drive about six axes of the θZ axis).

  The imprint apparatus 1 includes a curing unit 90 and a dispenser 32. In the hardening portion 90, the imprint material IM on the shot area of the substrate S is in contact with the pattern area PR of the mold M, and the imprint material is filled in the concave portion constituting the pattern of the pattern area PR. The material is irradiated with energy E for curing. The dispenser 32 supplies the imprint material IM onto the substrate S. The dispenser 32 disposes the imprint material IM at a target position on the substrate S, for example, by discharging the imprint material IM in a state where the substrate S is moved by the substrate positioning mechanism SA.

  The imprint apparatus 1 also includes a gas supply unit GS that supplies a gas between (the space of) the substrate S and the mold M. This gas may also be referred to as a purge gas or a fill promotion gas. As the purge gas, a gas having at least one of solubility and diffusivity to the imprint material, for example, at least one of helium gas and nitrogen gas is suitable. Due to the solubility or the diffusibility, the purge gas in the recess constituting the pattern of the pattern area PR of the mold M dissolves or diffuses in the imprint material IM, and the imprint material IM is quickly filled in the recess. Alternatively, as the purge gas, a condensable gas (for example, pentafluoropropane (PFP)) is suitable. Condensable gas in the concave portion constituting the pattern of the pattern area PR of the mold M is significantly reduced in volume by condensation upon contact with the imprint material IM, whereby the imprint material IM is rapidly filled in the concave portion Be done.

  The gas supply unit GS has a gas supply port 64 disposed between the dispenser 32 and the mold positioning mechanism MA, and the substrate S is driven from the gas supply port 64 by the substrate positioning mechanism SA. Supply gas on top. The gas supply unit GS may include a plurality of gas supply ports 61 to 64 including the gas supply port 64, and the plurality of gas supply ports 61 to 64 may be disposed around the mold M. The gas supply unit GS is disposed between each of the plurality of gas supply ports 61 to 64 and a gas supply source (not shown), and individually adjusts the flow rate of the gas supplied from the plurality of gas supply ports 61 to 64 Possible flow adjustment mechanisms 111-114 may be included. The plurality of gas supply ports 61 to 64 may be provided in the mold chuck 41 or a member fixed to the mold chuck 41, or provided in the mold drive mechanism 42 or a member fixed to the mold drive mechanism 42. It may be provided on a structure independent of the mold positioning mechanism MA.

  The gas supply unit GS supplies purge gas onto the substrate S from the gas supply port 64 disposed between the dispenser 32 and the mold positioning mechanism MA, in a state where the substrate S is driven by the substrate positioning mechanism SA. Here, the flow rate of the purge gas is a period during which the substrate S is being driven by the substrate positioning mechanism SA so that the shot area in which the imprint material IM is disposed moves under the mold M by the dispenser 32 (hereinafter, return driving Start to decrease in the Also by such control, the purge gas is supplied between the shot area where the imprint material IM is disposed and the mold M by the Couette flow generated by driving the substrate S by the substrate positioning mechanism SA. In addition, by starting to decrease the flow rate of the purge gas in the driving period, the consumption amount of the purge gas can be reduced.

  The imprint apparatus 1 may further include a second gas supply unit 72 including a second gas supply port 70 disposed around the mold positioning mechanism MA. The gas supply ports 61 to 64 may be disposed between the mold drive mechanism MA (type M) and the second gas supply port 70. The second gas supply unit 72 discharges the second gas so as to suppress the intrusion of particles between the substrate S and the mold M. The second gas may be a gas such as air from which particles have been removed or reduced.

  The structure of the gas supply part GS of 1st Embodiment is shown typically by Fig.3 (a). Although the gas supply ports 61 to 63 and the flow rate adjustment mechanisms 111 to 113 are omitted in FIG. 3A, they may have the same configuration as the gas supply port 64 and the flow rate adjustment mechanism 114. In the return drive period, the supply of the purge gas from the gas supply ports 61 to 63 may be controlled in the same manner as the supply of the purge gas from the gas supply port 64 or may be performed supplementarily. Alternatively, the purge gas may not be supplied from the gas supply ports 61 to 63 in the return drive period. The flow rate adjustment mechanisms 111 to 114 may include mass flow controllers.

  FIG. 3B shows purge gas supply control in one process cycle of the first embodiment. FIG. 7 shows the control of the supply of purge gas in the processing cycle of the comparative example. In FIG. 3 (b) and FIG. 7, the horizontal axis represents time, and the vertical axis represents the supply amount of purge gas from the gas supply port 64. In FIG. 3 (b) and FIG. 7, the area of the flow rate (actual flow rate) corresponds to the consumption amount of the purge gas.

  “Separation” indicated by an alternate long and short dash line means the separation of the cured imprint material IM and the mold M in one previous processing cycle. One processing cycle includes "driving in the back", "driving in the return", "imprinting" and "separation" regarding the shot area to be processed among the plurality of shot areas. “Drive to go” means drive by the substrate positioning mechanism SA to move the shot area to be processed to a position where application of the imprint material IM is started by the dispenser 32. “Driving on return” means driving by the substrate positioning mechanism SA for arranging the shot area to be processed at a position directly below the pattern area PR of the mold M. In this example, in the “return drive”, the imprint material IM is applied (disposed) by the dispenser 32 on the shot area to be processed. However, the imprint material IM may be applied (arranged) by the dispenser 32 on the shot area to be processed in the “drive to go”. The “imprint” is performed by contacting the imprint material IM with the pattern area PR of the mold M on the shot area to be processed, filling the imprint material IM into the recess of the pattern area PR, the imprint material by the curing unit 90 Means treatment including curing of IM. “Separation” means separation of the cured imprint material IM and the pattern area PR of the mold M.

  In order to dispose the purge gas between the shot area to be processed of the substrate S and the mold M, the purge gas need not always be discharged from the gas supply port 64. For example, after the driving of the substrate S by the substrate positioning mechanism SA is started so that the shot area where the imprint material should be arranged by the dispenser 32 approaches the dispenser 32 (after the driving of the go is started), It is sufficient to start the gas supply to the top. Thereby, the consumption of purge gas can be reduced.

  Also, the supply of gas onto the substrate S is started at the start timing (the start timing of the return drive) of the driving of the substrate S by the substrate positioning mechanism SA for arranging the shot area to be processed at the position directly below the mold M. It may be done. Alternatively, the supply of the gas onto the substrate S may be started at the timing when the supply of the imprint material to the shot area is started by the dispenser 32. Such control can further reduce the consumption of purge gas. In addition, if the supply of gas onto the substrate S is started at the timing when the shot area where the imprint material IM is disposed faces the gas supply port 64 by the dispenser 32, the consumption amount of the purge gas can be further reduced. . That is, the timing at which the supply of the gas onto the substrate S is started may be at the start timing of the return drive, may be before that, or may be after that.

  Here, the flow rate set in the flow rate adjustment mechanism 114 and the actual flow rate do not match, and for example, the actual flow rate has a time lag with respect to the flow rate set in the flow rate adjustment mechanism 114 Should be considered. Here, it is assumed that the flow rate of the purge gas necessary at a certain reference timing is Q0 in order to promote the filling of the imprint material IM into the concave portion of the pattern region PR. The reference timing may be arbitrarily determined. Hereinafter, as an example, the reference timing will be described as the start timing of the return drive.

  In the comparative example shown in FIG. 7, in order to control the flow rate of the purge gas so that the flow rate of the purge gas reaches Q0 at the start timing of the return drive as the reference timing, the timing is earlier than the start timing of the return drive. It is necessary to start gas supply (discharge). Therefore, the consumption amount of the purge gas corresponding to the area of the cross-hatched portion is additional due to the fact that the actual flow rate has a time delay relative to the flow rate set in the flow rate adjustment mechanism 114. Consumption. Assuming that there is no time delay of the actual flow rate to the flow rate set in the flow rate adjustment mechanism 114, the consumption amount of the purge gas is reduced to the consumption amount corresponding to the area of the portion hatched with single hatching. .

  In the first embodiment, the set flow rate of the flow rate adjustment mechanism 114 is greater than Q0 at a timing earlier than the return drive start timing so that the flow rate of the purge gas reaches Q0 at the return drive start timing which is an example of the reference timing. The large first set flow rate Q1a is obtained. Further, in the first embodiment, the set flow rate of the flow rate adjustment mechanism 114 is smaller than Q0 and is the second set flow rate Q2a smaller than Q1a in the return drive period. Here, the timing at which the set flow rate of the flow rate adjustment mechanism 114 changes from Q1a to Q2a may be within a period during which the imprint material is supplied by the dispenser 32, or may be after this period. . The set flow rate of the flow rate adjustment mechanism 114 is the flow rate set in the flow rate adjustment mechanism 114, and is indicated by a black solid line in FIG. 3 (b). When the flow rate adjustment mechanism 114 includes a mass flow controller, the set flow rate may be a flow rate command value to the mass flow controller. The flow rate (actual flow rate) actually supplied from the gas supply port 64 is shown by a thick gray solid line in FIG. 3 (b).

  The flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is such that the substrate S is driven by the substrate positioning mechanism SA such that the shot area in which the imprint material is disposed moves by the dispenser 32 under the mold M. Start decreasing during the period Then, in the period, the flow rate of the purge gas decreases to Q2a smaller than Q0. Thereby, the consumption of purge gas can be reduced. Also, by setting Q1a to a value larger than Q0, it is possible to reduce the time required for the actual flow rate to reach Q0. This also reduces the consumption of purge gas.

  In the example of FIGS. 3B and 3C, the flow rate of the gas supplied onto the substrate S is controlled by the substrate positioning mechanism SA such that the shot area in which the imprint material is disposed moves under the mold M. While the substrate S is being driven, it increases and then decreases. Further, in the examples of FIGS. 3B and 3C, the flow rate of the gas supplied onto the substrate S is such that the shot area in which the imprint material is disposed moves under the mold M. During the period in which the substrate S is driven by SA, it increases and then decreases and then becomes constant.

  Under the control as described above, it is confirmed that the concentration of the purge gas between the shot area of the substrate S and the mold M is equivalent to that of the comparative example shown in FIG. In addition, it has been confirmed that the consumption amount of the purge gas is reduced as compared with the comparative example shown in FIG.

  As illustrated in FIG. 3C, Q2a may be zero. In this case, the actual flow rate of the purge gas may be zero during the return drive. Since the purge gas discharged from the gas supply port 64 exists on the substrate S, it moves to a position below the mold M with the movement of the substrate S.

  Following the return drive, imprint is started. As described above, the imprint is performed by the contact between the imprint material IM on the shot area to be processed and the pattern area PR of the mold M, the filling of the imprint material IM in the recess of the pattern area PR, and the curing section 90 Including curing of the imprint material IM. The contact between the imprint material IM and the pattern region PR of the mold M reduces the distance between the substrate S and the mold M. Therefore, the concentration of the purge gas between the substrate S and the mold M is increased or maintained. Further, it is difficult to control the concentration of the purge gas between the substrate S and the mold M by supplying the purge gas from the gas supply port 64 in this state. Therefore, during the imprinting, the set flow rate of the flow rate adjustment mechanism 114 can be changed to Q3a smaller than Q2a. Q3a may be, for example, 0. The gas supply unit GS may be configured to stop the supply of gas onto the substrate S before the separation of the hardened imprint material and the mold M is completed.

  The values of Q1a, Q2a, and Q3a can be adjusted according to the position of the shot area to be processed on the substrate S, the process conditions, and the like. Therefore, the set flow rate of the purge gas can be changed according to the position of the shot area to be processed on the substrate S. The imprint apparatus 1 can include a terminal such as a console that configures a user interface, and the terminal can provide a default set flow rate as a set flow rate of purge gas. The user can determine a more preferable set flow rate based on the default set flow rate.

  The values of Q1a, Q2a, and Q3a may be set by a recipe file (control information file) for controlling processing of a lot including one or more substrates in the imprint apparatus 1.

  Hereinafter, an imprint apparatus 1 according to a second embodiment of the present invention will be described with reference to FIG. Matters not mentioned in the second embodiment can follow the first embodiment. FIG. 4A shows the configuration of the gas supply unit GS in the imprint apparatus 1 according to the second embodiment of the present invention. FIG. 4B shows purge gas supply control in one processing cycle of the second embodiment. The notation method in FIG. 4 (b) is in accordance with the marking method in FIG. 3 (b). Although the gas supply ports 61 to 63 and the flow rate adjustment mechanisms 111 to 113 are omitted in FIG. 4A, they may have the same configuration as the gas supply port 64 and the flow rate adjustment mechanism 114. In the drive period, the supply of the purge gas from the gas supply ports 61 to 63 may be controlled in the same manner as the supply of the purge gas from the gas supply port 64 or may be performed supplementarily. Alternatively, the supply of purge gas from the gas supply ports 61 to 63 may not be performed in the drive period.

  The gas supply unit GS of the second embodiment includes a flow rate adjustment mechanism 114 disposed between the gas supply source and the gas supply port 64. The flow rate adjustment mechanism 114 can include a flow rate regulator 119 and an on-off valve 124 disposed between the gas supply port 64 and the gas supply source, and a controller 130 for controlling the flow rate regulator 119 and the on-off valve 124. The controller 130 may be shared by the flow rate adjustment mechanisms 111-114. The flow rate regulator 119 is configured to feedback control the flow rate of the purge gas passing through the flow rate regulator 119 based on the flow rate command value sent from the controller 130. The flow rate regulator 119 may include, for example, a mass flow controller. The flow rate regulator 119 may be disposed between the on-off valve 124 and the gas supply port 64 as illustrated in FIG. 4A, or may be disposed between the gas supply source and the on-off valve 124 It is also good.

  In the second embodiment, the controller 130 supplies the flow rate command value to the flow rate regulator 119 at a first timing that is earlier than the start timing of the return drive, which is an example of the reference timing, in a period in which the on-off valve 124 is closed. Is changed from 0 to a first command value Q2b. The first command value Q2b is smaller than Q0 and larger than zero. Thereafter, the controller 130 switches the on-off valve 124 from the closed state to the open state at a second timing that is earlier than the return drive start timing but later than the first timing. That is, the controller 130 closes the on-off valve 124 and opens the on-off valve 124 after setting the flow rate command value for the flow rate regulator 119 to the first command value Q2 b. Thus, the flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is such that the substrate S is driven by the substrate positioning mechanism SA such that the shot area where the imprint material is disposed moves under the mold M. Decrease after increasing to Q1 b.

  The principle of changing the flow rate of the purge gas as described above will be described below. As described above, the flow rate regulator 119 is configured to feedback-control the flow rate of the purge gas passing through the flow rate regulator 119 based on the flow rate command value sent from the controller 130. Therefore, the flow rate regulator 119 performs feedback control of the opening degree of the valve of the flow rate regulator 119 so that the flow rate of the purge gas passing through the flow rate regulator 119 matches the first command value Q2b which is the flow rate command value. However, in this state, since the open / close valve 124 is in the closed state, the flow rate of the purge gas passing through the flow rate adjuster 119 continues to be zero. Thus, the opening degree of the flow rate regulator 119 is adjusted to the maximum opening degree.

  Then, the on-off valve 124 is switched from the closed state to the open state in a state where the opening degree of the valve of the flow rate regulator 119 is the maximum opening degree. As a result, the flow rate of the purge gas passing through the flow rate regulator 119 overshoots Q2b and over to Q1b. Q2b can be larger than Q0. Thereafter, the feedback control of the flow rate regulator 119 functions properly, and the flow rate of the purge gas flowing through the flow rate regulator 119 can converge to the first command value Q2b.

  Therefore, also in the second embodiment, the flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is the substrate positioning mechanism SA so that the shot area where the imprint material is disposed moves under the mold M. Start decreasing during the period when the substrate S is being driven.

  In the example of FIG. 4B, the flow rate of the gas supplied onto the substrate S is driven by the substrate positioning mechanism SA such that the shot area in which the imprint material is disposed moves under the mold M. It increases and then decreases in the period being Further, in the example of FIG. 4B, the flow rate of the gas supplied onto the substrate S is determined by the substrate positioning mechanism SA such that the shot area in which the imprint material is disposed moves under the mold M. It increases and then decreases and then becomes constant during the period that is being driven.

  The timing at which the flow rate command value for the flow rate regulator 119 is changed to Q2b is not limited to within the period of drive, and for example, the cured imprint material IM and the mold M are separated in one previous processing cycle. It may be within a period of

  The timing at which the on-off valve 124 is changed from the closed state to the open state is not limited to within the drive period of going, for example, the timing when the shot area to be processed faces the mold M after the start timing of the return drive. In front of The time required to switch the on-off valve 124 from the closed state to the open state is generally shorter than the time required to change the opening degree of the flow rate regulator 119. Therefore, the second embodiment is advantageous for speeding up the rising of the flow rate more than the first embodiment.

  Hereinafter, an imprint apparatus 1 according to a third embodiment of the present invention will be described with reference to FIG. Matters not mentioned in the third embodiment can follow the second embodiment. FIG. 5A shows the configuration of the gas supply unit GS in the imprint apparatus 1 according to the third embodiment of the present invention. FIG. 5B shows the control of the supply of purge gas in one processing cycle of the third embodiment. In addition, the notation method in FIG.5 (b) follows the description method in FIG.3 (b). Although the gas supply ports 61 to 63 and the flow rate adjustment mechanisms 111 to 113 are omitted in FIG. 5A, they may have the same configuration as the gas supply port 64 and the flow rate adjustment mechanism 114. In the drive period, the supply of the purge gas from the gas supply ports 61 to 63 may be controlled in the same manner as the supply of the purge gas from the gas supply port 64 or may be performed supplementarily. Alternatively, the supply of purge gas from the gas supply ports 61 to 63 may not be performed in the drive period.

  The gas supply unit GS of the third embodiment includes a flow rate adjustment mechanism 114 disposed between the gas supply source and the gas supply port 64. The flow rate adjustment mechanism 114 has a flow rate limiting valve 134 in addition to the flow rate regulator 119, the on-off valve 124 and the controller 130. The flow restricting valve 134 may be disposed at any position between the gas supply and the gas supply port 64. The flow rate limiting valve 134 limits the maximum value of the flow rate of gas supplied onto the substrate S by the gas supply unit GS. The flow rate adjustment mechanism 114 of the third embodiment has a configuration in which a flow rate limiting valve 134 is added to the flow rate adjustment mechanism 114 of the second embodiment.

  In the third embodiment, the controller 130 controls the flow rate command value to be supplied to the flow rate regulator 119 at a first timing that is earlier than the start timing of the return drive which is an example of the reference timing in a period in which the on-off valve 124 is closed. Is changed from 0 to a first command value Q2c. The first command value Q2c is smaller than Q0 and larger than zero. Thereafter, the controller 130 switches the on-off valve 124 from the closed state to the open state at a second timing that is earlier than the return drive start timing but later than the first timing. That is, the controller 130 closes the on-off valve 124 and opens the on-off valve 124 after setting the flow rate command value for the flow rate regulator 119 to the first command value Q2 c. Thus, the flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is such that the substrate S is driven by the substrate positioning mechanism SA such that the shot area where the imprint material is disposed moves under the mold M. Decrease after increasing to Q1c. Here, Q1c is smaller than Q1b in the second embodiment, and is determined by the opening degree set in the flow rate limiting valve 134. That is, when the flow rate of the purge gas passing through the flow rate regulator 119 overshoots beyond Q2c (and Q0), the flow rate limiting valve 134 limits the maximum value of the flow rate to Q1c smaller than Q1b.

  Also in the third embodiment, the flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is the substrate by the substrate positioning mechanism SA such that the shot area where the imprint material is disposed moves under the mold M. It starts to decrease during the period when S is being driven.

  In the example of FIG. 5B, the flow rate of the gas supplied onto the substrate S is such that the substrate S is driven by the substrate positioning mechanism SA such that the shot area where the imprint material is disposed moves under the mold M. It increases and then decreases in the period being Further, in the example of FIG. 5B, the flow rate of the gas supplied onto the substrate S is controlled by the substrate positioning mechanism SA such that the shot area in which the imprint material is disposed moves below the mold M. It increases and then decreases and then becomes constant during the period that is being driven.

  The opening degree of the flow rate limiting valve 134 can be adjusted, for example, such that the purge gas passing through the flow rate adjusting agent 119 becomes Q1c in a state where the opening degree of the flow rate adjusting agent 119 is set to the maximum.

  Hereinafter, an imprint apparatus 1 according to a fourth embodiment of the present invention will be described with reference to FIG. Matters not mentioned in the fourth embodiment can follow the first to third embodiments. FIG. 6A shows the configuration of the gas supply unit GS in the imprint apparatus 1 according to the fourth embodiment of the present invention. FIG. 6 (b) shows purge gas supply control in one processing cycle of the fourth embodiment. The notation method in FIG. 6 (b) is in accordance with the marking method in FIG. 3 (b). Although the gas supply ports 61 to 63 and the flow rate adjustment mechanisms 111 to 113 are omitted in FIG. 6A, they may have the same configuration as the gas supply port 64 and the flow rate adjustment mechanism 114. In the drive period, the supply of the purge gas from the gas supply ports 61 to 63 may be controlled in the same manner as the supply of the purge gas from the gas supply port 64 or may be performed supplementarily. Alternatively, the supply of purge gas from the gas supply ports 61 to 63 may not be performed in the drive period.

  The gas supply unit GS of the fourth embodiment includes a flow rate adjustment mechanism 114 disposed between the gas supply source and the gas supply port 64. The flow rate adjustment mechanism 114 can include an open / close valve 124, a pressure regulator 144, and a controller 130. The on-off valve 124 is disposed between the gas supply port 64 and the gas supply source. The pressure regulator 144 is disposed between the on-off valve 124 and the gas supply source. The controller 130 controls the pressure regulator 144 and the on-off valve 124. The controller 130 may be shared by the flow rate adjustment mechanisms 111-114. The pressure regulator 144 is configured to adjust the pressure of the connection passage 150 connecting the pressure regulator 144 and the on-off valve 124.

In the fourth embodiment, the controller 130 controls the flow rate of the purge gas to be Q2a, Q2b at a first timing that is earlier than the reference timing (here, the start timing of the return drive) in a period when the on-off valve 124 is closed. And the pressure command value given to the pressure regulator 144 so as to be the flow rate Q2d corresponding to Q2c. The flow rate Q2d is smaller than Q0 and larger than zero.
Thereafter, the controller 130 switches the on-off valve 124 from the closed state to the open state at a second timing that is earlier than the return drive start timing but later than the first timing. That is, the controller 130 causes the on-off valve 124 to open after the on-off valve 124 is closed and the pressure in the connection passage 150 is adjusted by the pressure regulator 144. Thus, the flow rate of the purge gas supplied onto the substrate S by the gas supply unit GS is such that the substrate S is driven by the substrate positioning mechanism SA such that the shot area where the imprint material is disposed moves under the mold M. Decrease after increasing to Q1d in the

  In general, pressure regulators are simpler and cheaper than flow regulators. Thus, the fourth embodiment is advantageous for simplification of the structure and cost reduction.

  The pattern of the cured product formed using the imprint apparatus is used permanently on at least a part of various articles or temporarily for manufacturing various articles. The article is an electric circuit element, an optical element, a MEMS, a recording element, a sensor, or a mold. Examples of the electric circuit element include volatile or nonvolatile semiconductor memories such as DRAM, SRAM, flash memory and MRAM, and semiconductor elements such as LSI, CCD, image sensor, and FPGA. The mold may, for example, be a mold for imprinting.

  The pattern of the cured product is used as it is as a component member of at least a part of the article or temporarily used as a resist mask. After etching, ion implantation, or the like is performed in the substrate processing step, the resist mask is removed.

  Next, an article manufacturing method will be described in which a pattern is formed on a substrate by an imprint apparatus, the substrate on which the pattern is formed is processed, and an article is manufactured from the substrate on which the processing is performed. As shown in FIG. 8 (a), a substrate 1z such as a silicon wafer on which a workpiece 2z such as an insulator is formed is prepared, and subsequently, the surface of the workpiece 2z is exposed by an inkjet method or the like. Apply the printing material 3z. Here, a state in which a plurality of droplet-shaped imprint materials 3z are applied onto a substrate is shown.

  As shown in FIG. 8B, the mold 4z for imprint is faced with the side on which the concavo-convex pattern is formed facing the imprint material 3z on the substrate. As shown in FIG. 8C, the substrate 1 provided with the imprint material 3z is brought into contact with the mold 4z, and pressure is applied. The imprint material 3z is filled in the gap between the mold 4z and the workpiece 2z. In this state, when light is irradiated through the mold 4z as energy for curing, the imprint material 3z is cured.

  As shown in FIG. 8D, after the imprint material 3z is cured, when the mold 4z and the substrate 1z are separated, a pattern of a cured product of the imprint material 3z is formed on the substrate 1z. In the pattern of the cured product, the concave portions of the mold correspond to the convex portions of the cured product, and the concave portions of the mold correspond to the convex portions of the cured product, that is, the uneven pattern of the mold 4z is transferred to the imprint material 3z. It will be done.

  As shown in FIG. 8 (e), when etching is performed using the pattern of the cured product as an etching resistant mask, the portion of the surface of the workpiece 2z which has no cured material or remains thin is removed, and the groove 5z is removed. Become. As shown in FIG. 8F, when the pattern of the cured product is removed, it is possible to obtain an article having grooves 5z formed on the surface of the workpiece 2z. Although the pattern of the cured product is removed here, it may be used, for example, as a film for interlayer insulation included in a semiconductor element or the like, that is, as a component of an article without removing it even after processing.

  Hereinafter, a molding apparatus according to a fifth embodiment of the present invention will be described with reference to FIG. The first to fourth embodiments are examples in which the molding apparatus according to the present invention is applied to a process of transferring a pattern of a mold (template) onto a substrate. The fifth embodiment is an example in which the molding apparatus according to the present invention is applied to planarization processing. The mold (planar template) used in the fifth embodiment has no pattern. The base pattern on the substrate has a concavo-convex profile resulting from the pattern formed in the previous step. Particularly with the recent multi-layered structure of memory elements, some processed substrates have steps of about 100 nm. It is possible to cope with the step due to the gentle undulation of the whole substrate by the focus following function of the scan exposure apparatus used in the photo process. However, fine irregularities having a pitch which falls within the exposure slit area of the scan exposure apparatus may consume DOF (Depth Of Focus) of the scan exposure apparatus.

  As a method of smoothing the underlying pattern on the substrate, there is a method of forming a planarizing layer such as SOC (Spin On Carbon) or CMP (Chemical Mechanical Polishing). However, in the existing technology, in the boundary portion between the isolated pattern area A and the repetitive Dense (dense line and space pattern) pattern area B in FIG. 9A, the unevenness suppression ratio of 40% to 70% is sufficiently flat. There is a problem that the conversion performance can not be obtained. In the future, the unevenness difference of the base due to the multilayering tends to further increase.

  As a solution to this problem, U.S. Pat. No. 4,915,418 proposes a method of applying a resist to be a planarizing layer by an ink jet dispenser and forming a continuous film by imprinting with a planar template. Further, U.S. Pat. No. 8,394,282 proposes a method of reflecting the topography measurement result on the wafer side in density information for each position at which the ink jet dispenser is instructed to apply.

  In the fifth embodiment, the present invention is applied to a planarization (planarization) apparatus that performs local planarization in a substrate surface by pressing a planar template against a previously applied uncured composition (resist). It is applied.

  FIG. 9A shows a substrate (wafer) before the planarization process. A schematically shows an isolated pattern area, that is, an area in which the area of the pattern convex portion is small. B is a dense area, in which a region in which the ratio of the area occupied by the pattern convex portion to the area occupied by the pattern concave portion is 1: 1 is schematically shown. In A and B, the average height takes different values depending on the proportion of the convex portion.

  FIG. 9B schematically shows a state in which a composition (resist) for forming a planarizing layer is applied to a substrate. Application of the composition to the substrate may be carried out using an inkjet dispenser as described in, for example, US Pat. No. 9,415,418, or may be carried out using a spin coater, or according to other methods. It is also good.

  FIG. 9C schematically shows the process of curing the composition by pressing the flat template against the composition (resist) on the substrate and irradiating the composition with energy for curing in that state. There is. The planar template can be made of, for example, glass or quartz that transmits ultraviolet light as energy for curing. The planar template deforms following the gentle asperities of the entire substrate. FIG. 9 (d) schematically shows a state in which the planar template is pulled away from the cured composition.

  The fifth embodiment is also advantageous for reducing the amount of gas to be supplied between the substrate and the mold. The molding apparatus of the fifth embodiment may have the same configuration as the imprint apparatus 1 shown in FIG. 1, but a simpler configuration is adopted because high accuracy is not required for positioning of the substrate and the mold. May be Referring to FIG. 1, the forming apparatus comprises a substrate positioning mechanism SA for positioning the substrate S, a mold positioning mechanism MA for positioning the mold M, and a composition on the substrate S (or a shot area of the substrate S). And a dispenser 32 for placing an object. In addition, the molding apparatus may include a gas supply unit GS. The gas supply unit GS has a gas supply port disposed between the dispenser 32 and the mold positioning mechanism MA, and the substrate S is driven by the substrate positioning mechanism SA from the gas supply port to the top of the substrate S Supply gas to the The flow rate of the gas supplied onto the substrate S by the gas supply unit GS is such that the substrate S (or the shot area of the substrate S) on which the composition is disposed by the dispenser 32 moves under the mold M The decrease may be initiated during the period when the substrate S is being driven by the mechanism SA.

  An article manufacturing method for manufacturing an article using the above-mentioned molding apparatus comprises the steps of: forming a cured product of a composition on a substrate using the molding apparatus; and processing the substrate on which the cured product is formed in the step Manufacturing an article from the substrate on which the treatment has been performed.

  Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the present invention.

1: Imprint apparatus, S: substrate, M: type, SA: substrate positioning mechanism, MA: type positioning mechanism, 32: dispenser, GS: gas supply unit, 61 to 64: gas supply port, 111 to 114: flow rate adjustment mechanism

Claims (13)

A molding apparatus for molding a composition on a substrate using a mold, the molding apparatus comprising:
A substrate positioning mechanism for positioning the substrate;
A mold positioning mechanism for positioning the mold;
A dispenser for disposing a composition on a shot area of the substrate;
A gas having a gas supply port disposed between the dispenser and the mold positioning mechanism, wherein the gas is supplied from the gas supply port onto the substrate while the substrate is being driven by the substrate positioning mechanism. And a supply unit,
The flow rate of gas supplied onto the substrate by the gas supply unit is such that the substrate is driven by the substrate positioning mechanism so that the shot area on which the composition is disposed by the dispenser moves under the mold. Start decreasing during the period
A molding apparatus characterized by The flow rate of gas supplied onto the substrate by the gas supply unit is such that the substrate is driven by the substrate positioning mechanism so that the shot area on which the composition is disposed by the dispenser moves under the mold. Increase and then decrease during the period
The forming apparatus according to claim 1, The flow rate of gas supplied onto the substrate by the gas supply unit is such that the substrate is driven by the substrate positioning mechanism so that the shot area on which the composition is disposed by the dispenser moves under the mold. Period, increase and then decrease and then become constant,
The forming apparatus according to claim 1, The gas supply unit includes a flow rate regulator disposed between the gas supply port and a gas supply source, an on-off valve disposed between the gas supply port and the gas supply source, and the flow rate regulator And a controller for controlling the on-off valve,
The flow rate regulator is configured to perform feedback control of the flow rate of gas passing through the flow rate regulator based on a flow rate command value sent from the controller.
The controller closes the on-off valve and opens the on-off valve after setting the flow rate command value to a first command value larger than 0, whereby the gas supply unit Decreasing the flow rate of the gas supplied to the top after
The molding apparatus according to claim 2 or 3, wherein The gas supply unit further includes a flow rate limiting valve for limiting the maximum value of the flow rate of gas supplied onto the substrate by the gas supply unit.
The forming apparatus according to claim 4, The gas supply unit includes an on-off valve disposed between the gas supply port and the gas supply source, and a pressure regulator disposed between the on-off valve and the gas supply source.
The pressure regulator is configured to adjust a pressure of a connection path connecting the pressure regulator and the on-off valve.
After the pressure of the connection path is adjusted by the pressure regulator with the on-off valve closed, the on-off valve is opened to allow the gas supply unit to supply the gas on the substrate. The flow rate increases in the period and then decreases
The molding apparatus according to claim 2 or 3, wherein The gas supply unit is configured to supply gas onto the substrate while the substrate is being driven by the substrate positioning mechanism so that the shot area where the composition to be placed by the dispenser is away from the position under the mold. Start supply,
The molding apparatus according to any one of claims 1 to 6, wherein The gas supply unit is configured to move the composition to the shot area by the dispenser after the driving of the substrate by the substrate positioning mechanism is started so that the shot area to arrange the composition by the dispenser approaches the dispenser. Start the gas supply on the substrate before the supply is started,
The forming apparatus according to any one of claims 1 to 7, characterized in that: The gas supply stops the supply of gas onto the substrate before separation of the cured composition and the mold is complete.
A forming apparatus according to any one of claims 1 to 8, characterized in that. The gas supply unit includes a plurality of gas supply ports including the gas supply port, and the plurality of gas supply ports are disposed around the mold.
The molding apparatus according to any one of claims 1 to 9, characterized in that. A process of forming a cured product of the composition on a substrate using the forming apparatus according to any one of claims 1 to 10;
Processing the substrate on which the cured product is formed in the step;
A method of manufacturing an article from the substrate on which the treatment has been performed. A molding apparatus for molding a composition on a substrate using a mold, the molding apparatus comprising:
A substrate positioning mechanism for positioning the substrate;
A mold positioning mechanism for positioning the mold;
A dispenser for placing the composition on the substrate;
A gas having a gas supply port disposed between the dispenser and the mold positioning mechanism, wherein the gas is supplied from the gas supply port onto the substrate while the substrate is being driven by the substrate positioning mechanism. And a supply unit,
The flow rate of the gas supplied onto the substrate by the gas supply unit is such that the substrate is driven by the substrate positioning mechanism so that the substrate on which the composition is disposed by the dispenser is moved under the mold. Start decreasing during the period
A molding apparatus characterized by Forming a cured product of the composition on a substrate using the forming apparatus according to claim 12;
Processing the substrate on which the cured product is formed in the step;
A method of manufacturing an article from the substrate on which the treatment has been performed.