TWI713707B - Component manufacturing method and grinding device - Google Patents

Component manufacturing method and grinding device Download PDF

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TWI713707B
TWI713707B TW106108002A TW106108002A TWI713707B TW I713707 B TWI713707 B TW I713707B TW 106108002 A TW106108002 A TW 106108002A TW 106108002 A TW106108002 A TW 106108002A TW I713707 B TWI713707 B TW I713707B
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wafer
thickness
grinding
chip
memory
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TW201802902A (en
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吉田真司
矢野紘英
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

若將晶圓分割而製造晶片時，以短時間掌握 所製造的各晶片的厚度，效率佳地獲得良品晶片。 If the wafer is divided to manufacture the chip, grasp it in a short time The thickness of the manufactured wafers is effective in obtaining good quality wafers.

本發明之元件之製造方法係具備有：研 削工程，其係將具備表示結晶方位的標記(N)且表面(Wa)以分割預定線(S)被劃區而形成有元件(D)的晶圓(W)的背面(Wb)，以研削石(740)進行研削；及分割工程，其係在研削工程之後，將晶圓(W)沿著分割預定線(S)進行分割而形成為晶片(C)，該元件(D)之製造方法係包含：記憶工程，其係由研削工程之後至分割工程之前，測定每個晶片(C)的厚度，且將所測定出的晶片(C)的位置資料、與晶片(C)的厚度值產生關連地進行記憶；及拾取工程，其係根據在記憶工程所記憶的晶片(C)的厚度值、與位置資料，選擇預先設定的容許厚度範圍內的晶片(C)來進行拾取。 The manufacturing method of the device of the present invention has: The cutting process, which is provided with a mark (N) indicating the crystal orientation, and the surface (Wa) is divided by a predetermined dividing line (S) to form the back (Wb) of the wafer (W) with the element (D), to Grinding the grinding stone (740); and dividing process, which is after the grinding process, the wafer (W) is divided along the planned dividing line (S) to form the chip (C), and the device (D) is manufactured The method includes: memory engineering, which measures the thickness of each wafer (C) from after the grinding process to before the division process, and combines the measured position data of the wafer (C) with the thickness value of the wafer (C) The memory is related and the picking process is based on the thickness value and position data of the chip (C) memorized in the memory process to select the chip (C) within the predetermined allowable thickness range for picking.

Description

元件之製造方法及研削裝置 Component manufacturing method and grinding device

本發明係關於由晶圓製造元件之製造方法、及研削晶圓的研削裝置。 The present invention relates to a manufacturing method for manufacturing components from a wafer and a grinding device for grinding the wafer.

在半導體元件的製造製程中，於在半導體晶圓的表面藉由分割預定線被劃區的各區域形成IC或LSI等元件。接著，在將晶圓的背面研削而薄化至預定的厚度之後，沿著分割預定線，將半導體晶圓切削而分割成晶片，藉此製造各個半導體元件。如上所示所製造的半導體元件被廣泛利用在各種電氣機器。 In the manufacturing process of semiconductor devices, components such as ICs or LSIs are formed on the surface of the semiconductor wafer in each area divided by predetermined lines. Next, after grinding and thinning the back surface of the wafer to a predetermined thickness, the semiconductor wafer is cut and divided into wafers along the planned dividing line, thereby manufacturing individual semiconductor elements. The semiconductor elements manufactured as shown above are widely used in various electrical equipment.

在晶圓被分割成晶片之後，測定各晶片的厚度，俾以從切削完成後的晶圓之中僅選擇厚度在容許值內的良品晶片。例如，以三次元方向積層有複數半導體元件晶片的積層元件係藉由形成具備容許值內的厚度的晶片被積層在晶圓上的積層晶圓，將該積層晶圓另外分割成各個晶片予以製造(參照例如專利文獻1)。 After the wafer is divided into wafers, the thickness of each wafer is measured so that only good wafers whose thickness is within the allowable value are selected from the wafers after the cutting is completed. For example, a multilayer device in which a plurality of semiconductor element wafers are laminated in the three-dimensional direction is manufactured by forming a multilayer wafer in which a wafer having a thickness within the allowable value is laminated on the wafer, and dividing the multilayer wafer into individual wafers. (See, for example, Patent Document 1).

〔先前技術文獻〕 [Prior technical literature] 〔專利文獻〕 〔Patent Literature〕

〔專利文獻1〕日本特開2013-145926號公報 [Patent Document 1] JP 2013-145926 A

經分割的晶片的厚度測定在元件製造製程中為重要工程之一，為了測定各晶片的厚度，按每個晶片，以測定器由上下方向夾入晶片來進行厚度測定，因此會有在用以獲得良品晶片的晶片厚度測定上耗費眾多時間的問題。 The thickness measurement of divided wafers is one of the important processes in the component manufacturing process. In order to measure the thickness of each wafer, the thickness of each wafer is measured by clamping the wafer in the vertical direction with a measuring device. Therefore, it will be used It is a problem that a lot of time is spent on wafer thickness measurement to obtain good wafers.

因此，將晶圓分割而製造晶片時，有以短時間掌握所製造的各晶片的厚度，以效率佳地獲得良品晶片的課題。 Therefore, when manufacturing wafers by dividing the wafers, there is a problem of grasping the thickness of each manufactured wafer in a short time and obtaining good quality wafers efficiently.

用以解決上述課題的第1發明係一種元件之製造方法，其係具備有：研削工程，其係將具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的背面，以研削石進行研削；及分割工程，其係在該研削工程之後，將晶圓沿著該分割預定線進行分割而形成為晶片，該元件之製造方法係包含：記憶工程，其係由該研削工程之後至該分割工程之前，測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶；及拾取工程，其係在該分割工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料， 選擇預先設定的容許厚度範圍內的晶片來進行拾取。 The first invention to solve the above-mentioned problems is a method of manufacturing a device, which includes: a grinding process, which is a wafer with a mark indicating a crystal orientation and divided by a predetermined dividing line on the surface to form the device The back side of the device is ground with a grinding stone; and a division process, which is after the grinding process, the wafer is divided along the predetermined division line to form a chip. The manufacturing method of the device includes: memory engineering, which is From after the grinding process to before the dividing process, measure the thickness of each wafer, and memorize the measured position data of the wafer in association with the thickness value of the wafer; and the picking process, which is in the division process Then, according to the thickness value of the chip stored in the memory project and the position data, Pick up wafers within a preset allowable thickness range.

第2發明係一種元件之製造方法，其係具備有：溝槽形成工程，其係在具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的該表面，沿著該分割預定線形成不貫穿至該背面的溝槽；研削工程，其係研削晶圓的該背面；分割工程，其係藉由該背面的研削，使該溝槽由該背面側表露出而將晶圓分割成晶片；及擴展工程，其係將被分割成晶片的晶圓以面方向擴張而將晶片間隔擴寬，該元件之製造方法係實施：記憶工程，其係由該分割工程之後至該擴展工程之前，測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶，且包含：拾取工程，其係在該擴展工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取。 The second invention is a method for manufacturing a device, which includes a groove forming process on the surface of a wafer on which the device is formed with a mark indicating the crystal orientation and is partitioned by a predetermined dividing line on the surface, A groove that does not penetrate the back surface is formed along the planned dividing line; the grinding process is to grind the back surface of the wafer; the dividing process is to grind the back surface to expose the groove from the back surface side The wafer is divided into chips; and the expansion process is to expand the wafer divided into chips in a plane direction to widen the chip interval. The manufacturing method of the device is implemented: memory engineering, which is performed by the division process After that, before the expansion process, the thickness of each wafer is measured, and the measured position data of the chip and the thickness value of the chip are memorized in association with the thickness value of the chip, and include: the picking process, which is after the expansion process, According to the thickness value of the chip stored in the memory project and the position data, a chip within a predetermined allowable thickness range is selected for picking.

第3發明係一種元件之製造方法，其係具備有：改質層形成工程，其係在具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的內部，沿著該分割預定線形成改質層；研削工程，其係研削晶圓的該背面；分割工程，其係藉由該背面的研削，使以該改質層為起點的裂痕朝向該表面產生而將晶圓分割成晶片；及擴展工程，其係將被分割成晶片的晶圓以面方向擴張而將晶片間隔擴寬，該元件之製造方法係實施：記憶工程，其係由該分割工程之後至該擴展工程之前，測定每個晶片 的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶，且包含：拾取工程，其係在該擴展工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取。 The third invention is a method of manufacturing a device, which includes a process of forming a modified layer in the inside of a wafer on which the device is formed with a mark indicating the crystal orientation and is partitioned on the surface by a predetermined dividing line, The modified layer is formed along the predetermined dividing line; the grinding process is to grind the back surface of the wafer; the dividing process is to grind the back surface to cause cracks starting from the modified layer to be generated toward the surface. Dividing a wafer into chips; and an expansion process, which expands the wafer divided into chips in a plane direction to widen the chip interval. The manufacturing method of the device is implemented: memory engineering, which is followed by the division process Before the expansion project, measure each chip The thickness of the chip and the measured position data of the chip and the thickness value of the chip are memorized in association with the thickness value of the chip, and include: the picking process, which is after the expansion process, based on the thickness of the chip memorized in the memory process Value, and the position data, select the wafer within the preset allowable thickness range for picking.

第4發明係一種研削裝置，其係具備有：保持手段，其係透過保護構件，保持具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的表面；研削手段，其係研削晶圓的背面：厚度測定手段，其係以非接觸測定晶圓的厚度；及資料處理手段，其係處理該厚度測定手段所取得的資料的研削裝置，該保持手段係具備有：保持平台，其係使晶圓的背面為上而保持以保護構件予以保護的晶圓的表面；旋轉手段，其係以該保持平台的中心為軸而使該保持平台旋轉；及角度辨識部，其係辨識該旋轉手段所旋轉的該保持平台的旋轉角度，該厚度測定手段係具備有：厚度測定器，其係具備：由被保持在該保持平台的晶圓的上方將測定光投光的投光部、及接受該測定光在晶圓作反射的反射光的受光部，且由在以該受光部所受光的晶圓的背面作反射的反射光、與在晶圓的表面作反射的反射光的光路差，測定晶圓的厚度；移動手段，其係使該厚度測定器至少以晶圓的徑方向移動；及徑方向位置辨識部，其係辨識該厚度測定器的位置，該資料處理手段係具備有：算出部，其係由在該厚度測定器所測定到的測定點中的該角度辨識部所辨識到的該保持平台的 旋轉角度、與徑方向位置辨識部所辨識到的該厚度測定器的徑方向位置，算出以形成在晶圓的標記為基準之針對該測定點的晶圓的面方向的位置資料；及記憶部，其係將該算出部所算出的該各位置資料、與該厚度測定器所測定到的各測定點中的晶片的厚度值產生關連地進行記憶，可將在該記憶部產生關連所記憶的晶片的該位置資料與該厚度值，在分割工程後所使用的加工裝置進行收授。 The fourth invention is a grinding apparatus, which is provided with: holding means for holding, through a protective member, the surface of a wafer on which elements are formed with marks indicating the crystal orientation and the surface is divided by a predetermined dividing line; Means, which is to grind the back of the wafer: thickness measurement means, which measure the thickness of the wafer in a non-contact manner; and data processing means, which are grinding devices that process the data obtained by the thickness measurement means, and the holding means has There are: a holding platform, which keeps the backside of the wafer up and the surface of the wafer protected by a protective member; a rotating means, which rotates the holding platform with the center of the holding platform as an axis; and angle recognition Section, which recognizes the rotation angle of the holding platform rotated by the rotating means, the thickness measuring means is provided with: a thickness measuring device, which is provided with: measuring light is projected from above the wafer held on the holding platform The light projecting part and the light receiving part that receives the reflected light reflected by the measuring light on the wafer are composed of the reflected light reflected on the back surface of the wafer received by the light receiving part and the light receiving part on the surface of the wafer. The optical path difference of the reflected reflected light is used to measure the thickness of the wafer; the moving means is to move the thickness measuring device at least in the radial direction of the wafer; and the radial direction position recognition part is to recognize the position of the thickness measuring device, The data processing means is provided with: a calculation unit that is recognized by the angle recognition unit in the measurement points measured by the thickness measuring device of the holding platform The rotation angle, and the radial position of the thickness measuring device recognized by the radial position recognition unit, calculates the position data of the wafer surface direction for the measurement point based on the mark formed on the wafer; and the memory unit The position data calculated by the calculation unit and the thickness value of the wafer at each measurement point measured by the thickness measuring device are memorized in association with each other, so that the memory associated with the memory unit can be stored The position data and the thickness value of the wafer are received by the processing device used after the dividing process.

本發明之元件之製造方法係由研削工程之後至分割工程之前、或由分割工程之後至擴展工程之前，進行測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶的記憶工程，記憶晶圓級的晶片的位置。接著，進行根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取的拾取工程，藉此變得不需要白費工地拾取晶片，而且變得不需要按每個晶片以測定器由上下方向夾入晶片來測定厚度，因此不會有在厚度測定耗費很多時間的情形，可以短時間掌握各晶片的厚度，且效率佳地獲得良品晶片。 The manufacturing method of the device of the present invention is to measure the thickness of each wafer from after the grinding process to before the division process, or from the division process to before the expansion process, and combine the measured position data of the chip with the thickness of the chip The memory process of memory is performed in connection with value generation, and the position of the wafer at the wafer level is memorized. Then, a picking process is performed in which a chip within a predetermined allowable thickness range is selected for picking based on the thickness value of the chip memorized in the memory process and the position data, thereby eliminating the need for wasteful site picking of the chip, and It becomes unnecessary to sandwich the wafers from the top and bottom with the measuring device for each wafer to measure the thickness. Therefore, the thickness measurement does not take a lot of time. The thickness of each wafer can be grasped in a short time, and good wafers can be obtained efficiently. .

此外，本發明之研削裝置係保持手段具備有：保持平台，其係使晶圓的背面為上而保持以保護構件予以保護的晶圓的表面；旋轉手段，其係以保持平台的中心為軸而使保持平台旋轉；及角度辨識部，其係辨識旋轉 手段所旋轉的保持平台的旋轉角度，厚度測定手段係具備有：厚度測定器，其係具備：由被保持在保持平台的晶圓的上方將測定光投光的投光部、及接受測定光在晶圓作反射的反射光的受光部，且由在以受光部所受光的晶圓的背面作反射的反射光、與在晶圓的表面作反射的反射光的光路差，測定晶圓的厚度；移動手段，其係使厚度測定器至少以晶圓的徑方向移動；及徑方向位置辨識部，其係辨識厚度測定器的位置，資料處理手段係具備有：算出部，其係由在厚度測定器所測定到的測定點中的角度辨識部所辨識到的保持平台的旋轉角度、與徑方向位置辨識部所辨識到的厚度測定器的徑方向位置，算出以形成在晶圓的標記為基準之針對測定點的晶圓的面方向的位置資料；及記憶部，其係將算出部所算出的各位置資料、與厚度測定器所測定到的各測定點中的晶片的厚度值產生關連地進行記憶，可將在記憶部產生關連所記憶的晶片的位置資料與厚度值，在分割工程後所使用的加工裝置進行收授，因此藉由使用在實施本發明之元件之製造方法之時，變得不需要白費工地拾取晶片，可以短時間掌握各晶片的厚度，且效率佳地獲得良品晶片。 In addition, the holding means of the grinding device of the present invention includes: a holding platform that holds the backside of the wafer upward and holds the surface of the wafer protected by a protective member; and a rotating means that takes the center of the holding platform as the axis So that the holding platform rotates; and the angle recognition part, which recognizes the rotation The angle of rotation of the holding platform rotated by the means, the thickness measuring means is provided with: a thickness measuring device, which is provided with: a light projection unit that projects the measurement light from above the wafer held on the holding platform, and receives the measurement light The light-receiving part of the reflected light reflected on the wafer is used, and the optical path difference between the reflected light reflected on the back of the wafer received by the light-receiving part and the reflected light reflected on the surface of the wafer is measured. Thickness; moving means, which moves the thickness measuring device at least in the radial direction of the wafer; and a radial position recognition unit which recognizes the position of the thickness measuring device, and the data processing means is provided with: a calculation unit, which is determined by The rotation angle of the holding platform recognized by the angle recognition unit in the measurement point measured by the thickness gauge and the radial position of the thickness gauge recognized by the radial position recognition unit are calculated to form the mark on the wafer The position data of the wafer surface direction for the measurement point as a reference; and the memory unit, which generates the thickness value of the wafer in each measurement point measured by the thickness measurement device with each position data calculated by the calculation unit Relevant memory can be generated in the memory part of the memory location data and thickness value of the memory chip, the processing device used after the division process to receive, so by using the manufacturing method of the device of the present invention At this time, it becomes unnecessary to pick up the wafers in vain, and the thickness of each wafer can be grasped in a short time, and good quality wafers can be obtained efficiently.

1‧‧‧研削裝置 1‧‧‧ Grinding device

10‧‧‧基座 10‧‧‧Base

A‧‧‧安裝卸下區域 A‧‧‧Installation and removal area

B‧‧‧研削區域 B‧‧‧Grinding area

110‧‧‧第1匣盒載置部 110‧‧‧The first cassette placement part

110a‧‧‧第1匣盒 110a‧‧‧Box 1

111‧‧‧第2匣盒載置部 111‧‧‧The second cassette placement part

111a‧‧‧第2匣盒 111a‧‧‧Box 2

12‧‧‧機器人 12‧‧‧Robot

14‧‧‧凹口檢測手段 14‧‧‧Notch detection method

140‧‧‧檢測用平台 140‧‧‧Testing platform

141‧‧‧高速度攝影機 141‧‧‧High Speed Camera

142‧‧‧畫像處理部 142‧‧‧Image Processing Department

15‧‧‧裝載臂 15‧‧‧Loading arm

16‧‧‧卸載臂 16‧‧‧Unloading arm

17‧‧‧洗淨手段 17‧‧‧Washing method

17a‧‧‧保持手段 17a‧‧‧Remaining means

170‧‧‧保持平台 170‧‧‧Maintain the platform

18‧‧‧一對高度規 18‧‧‧A pair of height gauges

181‧‧‧第1高度規 181‧‧‧The first height gauge

182‧‧‧第2高度規 182‧‧‧The second height gauge

19‧‧‧支柱 19‧‧‧Pillars

2‧‧‧切削裝置 2‧‧‧Cutting device

21‧‧‧吸盤平台 21‧‧‧Suction Cup Platform

21a‧‧‧保持面 21a‧‧‧Keep the surface

21b‧‧‧旋轉手段 21b‧‧‧Rotating means

21c‧‧‧固定夾具 21c‧‧‧Fixed fixture

22‧‧‧切削手段 22‧‧‧Cutting means

220‧‧‧切削刀 220‧‧‧Cutter

221‧‧‧轉軸套 221‧‧‧Rotary sleeve

222‧‧‧轉軸 222‧‧‧Shaft

23‧‧‧對準手段 23‧‧‧Alignment means

230‧‧‧攝影機 230‧‧‧Camera

3‧‧‧保持手段 3‧‧‧Keep the means

30‧‧‧保持平台 30‧‧‧Maintain the platform

300‧‧‧吸附部 300‧‧‧Adsorption part

300a‧‧‧保持面 300a‧‧‧Keep the surface

301‧‧‧框體 301‧‧‧Frame

30c‧‧‧吸盤平台的中心 30c‧‧‧The center of the suction cup platform

31‧‧‧旋轉手段 31‧‧‧Rotating means

310‧‧‧旋轉軸 310‧‧‧Rotation axis

311‧‧‧馬達 311‧‧‧Motor

32‧‧‧角度辨識部 32‧‧‧Angle Recognition Department

320‧‧‧標尺 320‧‧‧Ruler

321‧‧‧讀取部 321‧‧‧Reading section

321a‧‧‧纜線 321a‧‧‧Cable

4‧‧‧厚度測定手段 4‧‧‧Thickness measurement method

40‧‧‧厚度測定器 40‧‧‧Thickness Tester

400‧‧‧投光部 400‧‧‧Light Projection Department

401‧‧‧受光部 401‧‧‧Light receiving part

41‧‧‧移動手段 41‧‧‧Means of movement

410‧‧‧滾珠螺桿 410‧‧‧Ball screw

411‧‧‧基部 411‧‧‧Base

412‧‧‧臂部 412‧‧‧Arm

42‧‧‧徑方向位置辨識部 42‧‧‧Radial direction position recognition part

420‧‧‧標尺 420‧‧‧ Ruler

421‧‧‧讀取部 421‧‧‧Reading section

5‧‧‧研削進給手段 5‧‧‧ Grinding feed method

50‧‧‧滾珠螺桿 50‧‧‧Ball screw

51‧‧‧導軌 51‧‧‧Guide

52‧‧‧馬達 52‧‧‧Motor

53‧‧‧升降板 53‧‧‧Lift board

54‧‧‧保持具 54‧‧‧Retainer

7‧‧‧研削手段 7‧‧‧Researching methods

70‧‧‧轉軸 70‧‧‧Shaft

71‧‧‧轉軸套 71‧‧‧Rotary sleeve

72‧‧‧轉軸馬達 72‧‧‧Shaft Motor

73‧‧‧架座 73‧‧‧Frame seat

74‧‧‧研削輪 74‧‧‧grinding wheel

740‧‧‧研削石 740‧‧‧ Grinding Stone

741‧‧‧輪基台 741‧‧‧wheel abutment

8‧‧‧資料處理手段 8‧‧‧Data processing methods

80‧‧‧算出部 80‧‧‧Calculation Department

81‧‧‧記憶部 81‧‧‧Memory Department

90‧‧‧吸盤平台 90‧‧‧Suction Cup Platform

91‧‧‧照射頭 91‧‧‧ Irradiation head

910‧‧‧雷射光 910‧‧‧Laser

911‧‧‧雷射光 911‧‧‧Laser light

93‧‧‧平台 93‧‧‧Platform

94‧‧‧框架保持部 94‧‧‧Frame holding part

W‧‧‧晶圓 W‧‧‧wafer

Wa‧‧‧晶圓的表面 Wa‧‧‧The surface of the wafer

Wb‧‧‧晶圓的背面 Wb‧‧‧The back of the wafer

Wd‧‧‧晶圓的外周緣 Wd‧‧‧The outer periphery of the wafer

Wo‧‧‧晶圓的中心 Wo‧‧‧The center of the wafer

N‧‧‧凹口 N‧‧‧Notch

S‧‧‧分割預定線 S‧‧‧Divide line

D‧‧‧元件 D‧‧‧Component

C‧‧‧晶片 C‧‧‧chip

Ck‧‧‧晶片 Ck‧‧‧chip

CR‧‧‧裂痕 CR‧‧‧Crack

P‧‧‧保護構件 P‧‧‧Protection member

P1‧‧‧切割帶 P1‧‧‧cutting tape

P2‧‧‧擴展膠帶 P2‧‧‧Extension tape

F‧‧‧環狀框架 F‧‧‧Ring frame

F1‧‧‧環狀框架 F1‧‧‧Ring frame

G‧‧‧溝槽 G‧‧‧Groove

G1‧‧‧改質層 G1‧‧‧Modified layer

6‧‧‧拾取裝置 6‧‧‧Pickup device

60‧‧‧針 60‧‧‧ needle

61‧‧‧吸引墊 61‧‧‧Suction pad

1A‧‧‧研削裝置 1A‧‧‧grinding device

4A‧‧‧厚度測定手段 4A‧‧‧Thickness measurement method

49‧‧‧移動手段 49‧‧‧Means of movement

490‧‧‧滾珠螺桿 490‧‧‧Ball screw

491‧‧‧橋狀基部 491‧‧‧Bridge base

492‧‧‧可動部 492‧‧‧movable part

L1、L2、L3‧‧‧假想線 L1, L2, L3‧‧‧Imaginary line

Q1、Q2、...、Qk...、Qm‧‧‧測定點 Q1, Q2,..., Qk..., Qm‧‧‧Measurement point

T1、T2、T3、...、Tk...、Tm‧‧‧厚度 T1, T2, T3,..., Tk..., Tm‧‧‧Thickness

圖1係顯示研削裝置之一例的斜視圖。 Fig. 1 is a perspective view showing an example of a grinding device.

圖2係顯示對晶圓的背面，將研削輪定位的狀態的側 面圖。 Figure 2 shows the position of the grinding wheel on the back of the wafer 面图。 Face map.

圖3係顯示以研削石研削晶圓的背面的狀態的側面圖。 Fig. 3 is a side view showing a state where the back surface of the wafer is ground with a grinding stone.

圖4係顯示以厚度測定手段測定晶圓的厚度的狀態的側面圖。 Fig. 4 is a side view showing a state where the thickness of the wafer is measured by the thickness measuring means.

圖5係顯示以厚度測定器測定晶圓的厚度時的測定點的軌跡的平面圖。 Fig. 5 is a plan view showing the trajectory of the measurement point when the thickness of the wafer is measured by the thickness measuring device.

圖6係顯示由角度辨識部所辨識出的保持平台的旋轉角度與徑方向位置辨識部所辨識出的厚度測定器的徑方向位置，判斷對應測定點的座標位置的晶片的狀態的平面圖。 6 is a plan view showing the rotation angle of the holding platform recognized by the angle recognition unit and the radial position of the thickness measuring device recognized by the radial position recognition unit to determine the state of the wafer corresponding to the coordinate position of the measurement point.

圖7係顯示藉由切削裝置來分割晶圓的狀態的斜視圖。 Fig. 7 is a perspective view showing a state in which the wafer is divided by the cutting device.

圖8係顯示藉由拾取裝置來拾取晶片的狀態的側面圖。 Fig. 8 is a side view showing a state in which a wafer is picked up by the pickup device.

圖9係顯示在洗淨手段的近傍配設厚度測定手段的研削裝置之一例的斜視圖。 Fig. 9 is a perspective view showing an example of a grinding device in which the thickness measuring means is arranged near the cleaning means.

圖10係依工程別顯示本發明之第2實施形態的模式圖。 Fig. 10 is a schematic diagram showing the second embodiment of the present invention by project.

圖11係工程別顯示本發明之第3實施形態的模式圖。 Fig. 11 is a schematic diagram showing the third embodiment of the present invention by process.

1.第1實施形態 1. The first embodiment

圖1所示之研削裝置1係至少具備有：保持晶圓W的保持手段3；研削晶圓W的背面Wb的研削手段7；以非接觸測定晶圓W的厚度的厚度測定手段4；及處理厚度測定手段4所取得的資料的資料處理手段8。 The grinding device 1 shown in FIG. 1 is provided with at least: a holding means 3 for holding a wafer W; a grinding means 7 for grinding the back surface Wb of the wafer W; a thickness measuring means 4 for measuring the thickness of the wafer W by non-contact; and Data processing means 8 for processing the data obtained by thickness measurement means 4.

晶圓W係例如其外形為圓板形狀，晶圓W的表面Wa係以被配列成格子狀的分割預定線S被劃區成複數區域，在各區域係分別形成有在分割後成為晶片的IC等元件D。在晶圓W的外周緣Wd，以朝向晶圓W的中心Wo凹向徑方向內側的狀態形成有表示結晶方位的標記亦即凹口N。其中，晶圓W亦可為藉由將外周緣Wd的一部分平直地形成切口而形成有表示結晶方位的標記亦即定向平面者。 For example, the outer shape of the wafer W is a disc shape, and the surface Wa of the wafer W is divided into a plurality of regions by the planned dividing lines S arranged in a grid pattern, and each region is formed with a wafer after being divided. IC and other components D. On the outer peripheral edge Wd of the wafer W, a notch N, which is a mark indicating the crystal orientation, is formed in a state of being recessed toward the center Wo of the wafer W radially inward. Among them, the wafer W may be one having an orientation plane that is a mark indicating the crystal orientation by forming a notch straight on a part of the outer peripheral edge Wd.

晶圓W係當藉由研削裝置1被研削時，形成為例如藉由圖1所示之元件保護用的保護構件P被貼著在晶圓W的表面Wa而受到保護的狀態。保護構件P係例如具有與晶圓W同等的外徑的圓板狀的薄膜帶。其中，保護晶圓W的表面Wa的保護構件P並非為限定為薄膜帶者，亦可為因液狀樹脂被滴下至晶圓W的表面Wa而擴展所形成的樹脂構件等。 When the wafer W is ground by the grinding device 1, it is formed in a state of being protected by being attached to the surface Wa of the wafer W by, for example, a protective member P for device protection shown in FIG. 1. The protective member P is a disk-shaped film tape having an outer diameter equivalent to that of the wafer W, for example. However, the protective member P that protects the surface Wa of the wafer W is not limited to a film tape, and may be a resin member formed by spreading liquid resin on the surface Wa of the wafer W.

研削裝置1的基座10上的前方(-X方向側)係形成為對保持手段3所配備的保持平台30進行晶圓W的安裝卸下的區域亦即安裝卸下區域A，基座10上之後方(+X方向側)係形成為藉由研削手段7進行被保持在 保持平台30上的晶圓W的研削的區域亦即研削區域B。 The front (-X direction side) on the base 10 of the grinding apparatus 1 is formed as an area where the wafer W is mounted and removed from the holding platform 30 provided by the holding means 3, that is, the mounting and dismounting area A, the base 10 The upper back side (+X direction side) is formed to be held by the grinding means 7 The grinding area B that is the grinding area of the wafer W on the holding platform 30 is maintained.

在基座10的正面側(-X方向側)排列設有例如第1匣盒載置部110及第2匣盒載置部111，在第1匣盒載置部110載置收容加工前的晶圓W的第1匣盒110a，在第2匣盒載置部111載置收容加工後的晶圓W的第2匣盒111a。 On the front side (-X direction side) of the base 10 are arranged, for example, a first cassette placement portion 110 and a second cassette placement portion 111, and the first cassette placement portion 110 is placed and stored before processing. The first cassette 110 a of the wafer W is placed on the second cassette placing portion 111 and the second cassette 111 a accommodating the processed wafer W.

在第1匣盒載置部110之後方(+X方向側)係配設有由第1匣盒110a搬出加工前的晶圓W並且將加工後的晶圓W搬入至第2匣盒111a的機器人12。在鄰接機器人12的位置係配設有檢測晶圓W的凹口N的凹口檢測手段14。 Behind the first cassette placement portion 110 (+X direction side) is arranged a wafer W from the first cassette 110a before processing and the wafer W after processing is transported into the second cassette 111a. Robot 12. At a position adjacent to the robot 12, a notch detection means 14 for detecting the notch N of the wafer W is arranged.

凹口檢測手段14係例如具備有：可在吸引保持晶圓W的狀態下旋轉的檢測用平台140；控制檢測用平台140的旋轉動作的未圖示之旋轉手段；被定位在藉由檢測用平台140被保持的晶圓W的上方且具備有CMOS影像感測器等的高速度攝影機141；及根據藉由高速度攝影機141被攝像到的畫像，進行畫像處理等的畫像處理部142。 The notch detection means 14 is equipped with, for example, a detection stage 140 that can rotate while sucking and holding the wafer W; a rotation means not shown that controls the rotation of the detection stage 140; A high-speed camera 141 such as a CMOS image sensor is provided above the wafer W on which the stage 140 is held; and an image processing unit 142 that performs image processing and the like based on the image captured by the high-speed camera 141.

在鄰接凹口檢測手段14的位置配置有在保持晶圓W的狀態下進行回旋的裝載臂15。裝載臂15係以吸引墊吸引保持在凹口檢測手段14中被檢測到凹口N的晶圓W，且搬送至被配設在加工區域B內的保持平台30。在裝載臂15之鄰設有在保持加工後的晶圓W的狀態下進行回旋的卸載臂16。在近接卸載臂16的位置係配設有將 藉由卸載臂16被搬送的加工後的晶圓W進行洗淨的洗淨手段17。藉由洗淨手段17被洗淨的晶圓W係藉由機器人12被搬入至第2匣盒111a。 A loading arm 15 that swings while holding the wafer W is arranged at a position adjacent to the notch detection means 14. The loading arm 15 sucks and holds the wafer W whose notch N has been detected in the notch detection means 14 with a suction pad, and conveys it to the holding platform 30 arranged in the processing area B. An unloading arm 16 that swings while holding the processed wafer W is provided adjacent to the loading arm 15. At the position close to the unloading arm 16 is equipped with A cleaning means 17 for cleaning the processed wafer W transported by the unloading arm 16. The wafer W cleaned by the cleaning means 17 is carried into the second cassette 111a by the robot 12.

圖1所示之保持手段3係具備有：保持晶圓W的保持平台30；以保持平台30的中心30c為軸使其進行旋轉的旋轉手段31；及辨識旋轉手段31所旋轉的保持平台30的旋轉角度的角度辨識部32。其中，在圖1中係模式顯示旋轉手段31及角度辨識部32的各構成。 The holding means 3 shown in FIG. 1 is provided with: a holding platform 30 that holds the wafer W; a rotating means 31 that rotates the center 30c of the holding platform 30 as an axis; and a holding platform 30 that recognizes the rotation of the rotating means 31 The rotation angle of the angle recognition unit 32. Among them, each configuration of the rotation means 31 and the angle recognition unit 32 is schematically shown in FIG. 1.

被配設在研削裝置1的基座10上且保持晶圓W的保持平台30係例如具備有：其外形為圓形狀，由多孔構件等所成且吸附晶圓W的吸附部300；及支持吸附部300的框體301。吸附部300係與未圖示之吸引源相連通，吸引源進行吸引所產生出的吸引力被傳達至吸附部300的露出面亦即保持面300a，藉此保持平台30係在保持面300a上吸引保持晶圓W。保持平台30係形成為在研削區域B內，可在基座10上以X軸方向往返移動。 The holding platform 30, which is arranged on the base 10 of the grinding apparatus 1 and holds the wafer W, is provided with, for example, a suction part 300 whose outer shape is a circular shape and is formed of a porous member and sucks the wafer W; and a support The frame 301 of the suction unit 300. The suction part 300 is connected to a suction source not shown in the figure, and the attractive force generated by the suction by the suction source is transmitted to the exposed surface of the suction part 300, that is, the holding surface 300a, whereby the holding platform 30 is attached to the holding surface 300a Attract and hold wafer W. The holding platform 30 is formed in the grinding area B and can move back and forth in the X-axis direction on the base 10.

被配設在保持平台30的下側的旋轉手段31係具備有：其上端被固定在保持平台30的底面側的旋轉軸310、及使旋轉310旋轉的馬達311。旋轉軸310的軸方向係Z軸方向，保持平台30的中心30c位於旋轉軸310的軸中心的延長線上。 The rotating means 31 disposed on the lower side of the holding platform 30 includes a rotating shaft 310 whose upper end is fixed to the bottom surface side of the holding platform 30 and a motor 311 that rotates the rotation 310. The axial direction of the rotating shaft 310 is the Z-axis direction, and the center 30 c of the holding platform 30 is located on an extension line of the axial center of the rotating shaft 310.

在旋轉軸310的下端側配設有角度辨識部32。角度辨識部32係例如具備有：外形為圓板狀且以周方向以等間隔形成有刻度的標尺320；及讀取標尺320的 刻度的讀取部321，圓板狀的標尺320係使旋轉軸310的軸心與中心相一致而被固定在旋轉軸310的下端側。因此，伴隨旋轉軸310進行旋轉，保持平台30及標尺320以與旋轉軸310同方向以同一角度份進行旋轉。 The angle recognition part 32 is arranged on the lower end side of the rotating shaft 310. The angle recognition unit 32 is provided with, for example, a scale 320 whose outer shape is a disc shape and scales are formed at equal intervals in the circumferential direction; and a reading scale 320 The scale reading unit 321 and the disc-shaped scale 320 are fixed to the lower end side of the rotating shaft 310 by aligning the axis of the rotating shaft 310 with the center. Therefore, as the rotating shaft 310 rotates, the holding platform 30 and the scale 320 rotate in the same direction and at the same angle as the rotating shaft 310.

被配設在標尺320的下側的讀取部321係例如讀取形成在標尺320的刻度的反射光的光學式者，在讀取部321係連接有用以傳送所讀取到的資訊的纜線321a。該纜線321a的另一端係連接於資料處理手段8。接著，角度辨識部32係可根據讀取部321由標尺320所讀取到的資訊，辨識保持平台30的旋轉角度。其中，角度辨識部32亦可形成為編碼器辨識馬達311的旋轉角度而通知資料處理手段8的構成。 The reading section 321 arranged on the lower side of the scale 320 is, for example, an optical type that reads the reflected light formed on the scale of the scale 320, and a cable for transmitting the read information is connected to the reading section 321 Line 321a. The other end of the cable 321a is connected to the data processing means 8. Then, the angle recognition unit 32 can recognize the rotation angle of the holding platform 30 based on the information read by the reading unit 321 from the scale 320. Among them, the angle recognition unit 32 may also be formed as a configuration in which the encoder recognizes the rotation angle of the motor 311 and notifies the data processing means 8.

在研削區域B的基座10上的後方(+X方向側)立設有支柱19，在支柱19的-X方向側的側面配設有研削進給手段5。研削進給手段5係由以下構成：具有鉛直方向(Z軸方向)的軸心的滾珠螺桿50；與滾珠螺桿50平行配設的一對導軌51；連結於滾珠螺桿50的上端且使滾珠螺桿50旋動的馬達52；內部的螺帽螺合於滾珠螺桿50且側部滑接於導軌51的升降板53；及被連結在升降板53且保持研削手段7的保持具54，若馬達52使滾珠螺桿50旋動，伴隨此升降板53被導引至導軌51而以Z軸方向往返移動，被保持在保持具54的研削手段7以在保持平台30進行接近或間離的Z軸方向予以研削進給。 A pillar 19 is erected on the rear (+X direction side) of the base 10 in the grinding area B, and a grinding feed means 5 is arranged on the side of the pillar 19 on the −X direction side. The grinding and feeding means 5 is composed of: a ball screw 50 having an axis in the vertical direction (Z-axis direction); a pair of guide rails 51 arranged in parallel with the ball screw 50; and the upper end of the ball screw 50 is connected to the ball screw 50 rotating motor 52; the inner nut is screwed to the ball screw 50 and the side slidably connected to the lifting plate 53 of the guide rail 51; and the holder 54 connected to the lifting plate 53 and holding the grinding means 7, if the motor 52 The ball screw 50 is rotated, and the lifting plate 53 is guided to the guide rail 51 to move back and forth in the Z-axis direction, and is held by the grinding means 7 of the holder 54 in the Z-axis direction for approaching or separating on the holding platform 30 Give grinding feed.

研削手段7係具備有：軸方向為鉛直方向(Z軸方向)的轉軸70；可旋轉地支持轉軸70的轉軸套71；將轉軸70旋轉驅動的轉軸馬達72；連接於轉軸70的下端的圓環狀的架座73；及可安裝卸下地連接於架座73的下面的研削輪74。 The grinding means 7 is provided with: a shaft 70 with a vertical axis (Z-axis direction); a shaft sleeve 71 that rotatably supports the shaft 70; a shaft motor 72 that rotationally drives the shaft 70; and a circle connected to the lower end of the shaft 70 A ring-shaped frame 73; and a grinding wheel 74 detachably connected to the lower surface of the frame 73.

研削輪74係具備有：環狀的輪基台741；及以環狀配設在輪基台741的底面之大致長方體形狀的複數研削石740。研削石740係例如以樹脂結合或金屬結合等固接鑽石砥粒等而成形。其中，研削石740的形狀亦可為一體形成為環狀者。在研削手段7的內部係形成有成為研削水之通道之未圖示的流路，該流路係以可在輪基台741的底面，朝向研削石740噴出研削水的方式形成開口。 The grinding wheel 74 is provided with a ring-shaped wheel base 741 and a plurality of grinding stones 740 in a substantially rectangular parallelepiped shape arranged on the bottom surface of the wheel base 741 in a ring shape. The grinding stone 740 is formed by fixing diamond particles or the like, for example, by resin bonding or metal bonding. Wherein, the shape of the grinding stone 740 may also be formed integrally into a ring shape. A flow path (not shown) that serves as a passage for the grinding water is formed inside the grinding means 7, and the flow path is opened so that the grinding water can be sprayed from the bottom surface of the wheel base 741 toward the grinding stone 740.

在鄰接位於研削區域B內的保持平台30的-Y方向側的位置係配設有厚度測定手段4。厚度測定手段4係具備有：厚度測定器40；使厚度測定器40至少以晶圓W的徑方向(在圖示之例中為Y軸方向)移動的移動手段41；及辨識厚度測定器40的位置的徑方向位置辨識部42。 The thickness measuring means 4 is arranged at a position adjacent to the -Y direction side of the holding platform 30 located in the grinding area B. The thickness measuring means 4 is provided with: a thickness measuring device 40; a moving means 41 that moves the thickness measuring device 40 at least in the radial direction of the wafer W (the Y-axis direction in the example shown in the figure); The position of the radial direction position recognition unit 42.

移動手段41係例如具備有：以保持平台30的行進方向(X軸方向)具有與水平方向呈正交的方向(Y軸方向)的軸心的滾珠螺桿410；在中空中支持滾珠螺桿410的兩端的橋狀基部411；內部的螺帽螺合在滾珠螺桿410而在滾珠螺桿410上朝向Y軸方向往返移動的臂部412；及連結在滾珠螺桿410的一端且使滾珠螺桿410 旋動之未圖示之馬達。臂部412係朝向+Y方向側延伸，在臂部412的+Y方向側的前端配設有厚度測定器40。若未圖示之馬達使滾珠螺桿410旋動，伴隨此臂部412在滾珠螺桿410上以Y軸方向往返移動，厚度測定器40在被定位在研削手段7的下方的保持平台30的上方以Y軸方向往返移動。其中，亦可在厚度測定手段4，除了移動手段41之外，具備有可朝X軸方向移動的移動手段，藉此厚度測定器40亦可朝X軸方向移動。 The moving means 41 includes, for example, a ball screw 410 having an axis perpendicular to the horizontal direction (Y-axis direction) in the traveling direction (X-axis direction) of the platform 30; and a ball screw 410 that supports the ball screw 410 in the middle. The bridge-like base 411 at both ends; the inner nut screwed on the ball screw 410 and the arm 412 that moves back and forth in the Y-axis direction on the ball screw 410; and one end connected to the ball screw 410 to make the ball screw 410 Rotating motor not shown. The arm portion 412 extends toward the +Y direction side, and a thickness measuring device 40 is arranged at the tip of the arm portion 412 on the +Y direction side. If a motor not shown in the figure rotates the ball screw 410, and the arm 412 reciprocates on the ball screw 410 in the Y-axis direction, the thickness measuring device 40 is positioned above the holding platform 30 positioned below the grinding means 7 Move back and forth in the Y-axis direction. Among them, the thickness measuring means 4 may be provided with a moving means movable in the X-axis direction in addition to the moving means 41, whereby the thickness measuring device 40 can also be moved in the X-axis direction.

徑方向位置辨識部42係形成為例如具備有：以沿著臂部412的移動方向(Y軸方向)延伸的方式形成在基部411的上面的標尺420；及讀取標尺420的位置資訊(刻度)的讀取部421的構成。讀取部421係被固定在臂部412且連同臂部412一起以Y軸方向移動。讀取部421係例如讀取標尺420的刻度的反射光的光學式者，可辨識配設在臂部412的+Y方向側的前端的厚度測定器40的徑方向位置，亦即Y軸方向的位置。 The radial position recognition unit 42 is formed to include, for example, a scale 420 formed on the upper surface of the base portion 411 so as to extend along the movement direction (Y-axis direction) of the arm portion 412; and position information of the scale 420 (scale ) The configuration of the reading unit 421. The reading unit 421 is fixed to the arm 412 and moves in the Y-axis direction together with the arm 412. The reading unit 421 is, for example, an optical type that reads the reflected light of the scale of the scale 420, and can recognize the radial position of the thickness measuring device 40 arranged at the tip of the arm 412 on the +Y direction side, that is, the Y axis direction s position.

在鄰接位於研削區域B內的保持平台30的+Y方向側的位置，配設有例如以接觸式測定晶圓W的厚度的一對高度規18。一對高度規18係具備有：保持平台30的保持面300a的高度位置測定用的第1高度規181；及晶圓W的背面Wb的高度位置測定用的第2高度規182，第1高度規181及第2高度規182係在其前端具備有以上下方向作升降的接觸件。藉由第1高度規181，被檢測成為基準面的框體301的上面的高度位置，且藉由第 2高度規182，被檢測所被研削的晶圓W的背面Wb的高度位置，藉由算出兩者的檢測值的差，可在研削中隨時測定晶圓W的厚度。 At positions adjacent to the +Y direction side of the holding platform 30 located in the grinding area B, a pair of height gauges 18 for measuring the thickness of the wafer W in contact, for example, are arranged. The pair of height gauges 18 are provided with: a first height gauge 181 for measuring the height position of the holding surface 300a of the holding platform 30; and a second height gauge 182 for measuring the height position of the back surface Wb of the wafer W. The first height The gauge 181 and the second height gauge 182 are equipped with a contact piece that moves up and down in the up and down direction at their front ends. With the first height gauge 181, the height position of the upper surface of the frame 301 as the reference surface is detected, and by the first The height gauge 182 detects the height position of the back surface Wb of the wafer W to be ground, and calculates the difference between the detected values of the two, so that the thickness of the wafer W can be measured at any time during grinding.

資料處理手段8係連接於厚度測定手段4及角度辨識部32，具備有：由CPU等所成之算出部80；及由記憶元件等所成之記憶部81。 The data processing means 8 is connected to the thickness measuring means 4 and the angle recognition unit 32, and includes: a calculation unit 80 formed by a CPU or the like; and a memory unit 81 formed by a memory element or the like.

以下使用圖1~8，說明使用研削裝置1來實施本發明之元件之製造方法時之研削裝置1的動作、及元件之製造方法的各工程。 1 to 8 are used to describe the operations of the grinding device 1 when the grinding device 1 is used to implement the method of manufacturing the device of the present invention, and each process of the device manufacturing method.

(1)研削工程 (1) Research engineering

首先，實施以研削石740研削晶圓W的背面Wb的研削工程。例如，所被研削的晶圓W係如圖1所示，在晶圓W的表面Wa被保護構件P所保護的狀態下，被收容在第1匣盒110a的內部。機器人12進行回旋移動，進入至第1匣盒110a內部，吸引保持研削前的晶圓W。接著，機器人12由第1匣盒110a內部搬出晶圓W，將晶圓W載置於檢查用平台140上。此時，晶圓W係使例如成為被研削面的背面Wb成為上側。檢查用平台140吸引保持晶圓W，此外，機器人12由檢查用平台140上退避。 First, the grinding process of grinding the back surface Wb of the wafer W with the grinding stone 740 is performed. For example, as shown in FIG. 1, the wafer W to be ground is housed in the first cassette 110 a in a state where the surface Wa of the wafer W is protected by the protective member P. The robot 12 moves orbitally, enters the inside of the first cassette 110a, and sucks and holds the wafer W before grinding. Next, the robot 12 unloads the wafer W from the inside of the first cassette 110 a, and places the wafer W on the inspection platform 140. At this time, the wafer W has, for example, the back surface Wb, which is the surface to be ground, on the upper side. The inspection platform 140 sucks and holds the wafer W, and the robot 12 is retreated from the inspection platform 140.

高速度攝影機141在吸引保持有晶圓W的檢查用平台140上移動，以晶圓W收納在高速度攝影機141的攝像區域內的方式使高速度攝影機141被定位。接著，藉由未圖示之旋轉手段，檢查用平台140以Z軸方向的軸 心為軸進行旋轉，高速度攝影機141對正在旋轉的晶圓W的外周緣Wd以高速連續攝影，畫像處理部142例如藉由具有攝像畫中的晶圓W的外周緣Wd所具有的固有的顏色資訊的畫素，檢測晶圓W的外周緣Wd的凹口N。例如，通過晶圓W的中心Wo與凹口N的假想線相對X軸方向成為平行，而且以凹口N位於-X方向側的方式，保持晶圓W的檢查用平台140進行旋轉。 The high-speed camera 141 moves on the inspection platform 140 on which the wafer W is sucked and held, and the high-speed camera 141 is positioned so that the wafer W is housed in the imaging area of the high-speed camera 141. Next, by rotating means not shown, the inspection platform 140 is The high-speed camera 141 continuously photographs the outer peripheral edge Wd of the rotating wafer W at high speed. The image processing unit 142, for example, has the inherent characteristic of the outer peripheral edge Wd of the wafer W in the image. For the pixels of the color information, the notch N of the outer periphery Wd of the wafer W is detected. For example, an imaginary line passing through the center Wo of the wafer W and the notch N is parallel to the X-axis direction, and the inspection platform 140 holding the wafer W is rotated so that the notch N is located on the −X direction side.

裝載臂15以位於檢查用平台140上的方式進行回旋，且吸引保持晶圓W。吸引保持有晶圓W的裝載臂15將晶圓W定位在保持平台30的上方。此時，裝載臂15係以位於保持平台30的中心30c與晶圓W的中心Wo由上方觀看為相重疊的位置的方式進行調整。接著，晶圓W以背面Wb成為上側的方式被載置於保持平台30的保持面300a上，保持平台30在保持面300a上吸引保持晶圓W，此外，裝載臂15由保持平台30上退避。 The loading arm 15 swings so as to be positioned on the inspection platform 140, and sucks and holds the wafer W. The loading arm 15 sucking and holding the wafer W positions the wafer W above the holding platform 30. At this time, the load arm 15 is adjusted so that the center 30c of the holding platform 30 and the center Wo of the wafer W overlap as viewed from above. Next, the wafer W is placed on the holding surface 300a of the holding platform 30 so that the back surface Wb becomes the upper side, and the holding platform 30 sucks and holds the wafer W on the holding surface 300a, and the load arm 15 is retracted from the holding platform 30 .

晶圓W係在例如通過晶圓W的中心Wo與凹口N的假想線與Y軸方向呈平行，而且凹口N位於-Y方向側的狀態，亦即在保持平台30上掌握到凹口N的位置的狀態下被吸引保持。 The wafer W is in a state where, for example, the imaginary line passing through the center Wo of the wafer W and the notch N is parallel to the Y-axis direction, and the notch N is located on the -Y direction side, that is, the notch is grasped on the holding platform 30 The position of N is sucked and held.

接著，如圖2所示，保持有晶圓W的保持平台30朝+X方向移動至研削手段7之下，保持平台30相對研削手段7的研削輪74被定位。伴隨藉由轉軸馬達72，轉軸70被旋轉驅動，研削輪74由+Z方向側觀看以逆時針方向以預定速度旋轉。此外，研削手段7藉由研削 進給手段5被送至-Z方向，研削手段7所配備的研削輪74朝-Z方向降下，研削石740抵接於晶圓W的背面Wb，藉此進行研削加工。此外，研削中伴隨旋轉手段31使保持平台30由+Z方向側觀看以逆時針方向旋轉，被保持在保持平台30上的晶圓W亦旋轉，因此研削石740進行晶圓W的背面Wb的全面的研削加工。如圖3所示，在研削晶圓W至預定的厚度之後，藉由圖1所示之研削進給手段5，使研削手段7朝+Z方向移動而由研削加工完畢的晶圓W間離。 Next, as shown in FIG. 2, the holding platform 30 holding the wafer W is moved in the +X direction below the grinding means 7, and the holding platform 30 is positioned relative to the grinding wheel 74 of the grinding means 7. As the rotating shaft 70 is rotationally driven by the rotating shaft motor 72, the grinding wheel 74 rotates at a predetermined speed in a counterclockwise direction when viewed from the +Z direction side. In addition, the grinding means 7 by grinding The feeding means 5 is sent to the -Z direction, the grinding wheel 74 provided in the grinding means 7 is lowered in the -Z direction, and the grinding stone 740 abuts on the back surface Wb of the wafer W to perform grinding processing. In addition, during grinding, the holding platform 30 is rotated counterclockwise when viewed from the +Z direction side by the rotating means 31, and the wafer W held on the holding platform 30 is also rotated. Therefore, the grinding stone 740 performs the cleaning of the back surface Wb of the wafer W. Comprehensive grinding and processing. As shown in FIG. 3, after grinding the wafer W to a predetermined thickness, the grinding means 7 is moved in the +Z direction by the grinding feeding means 5 shown in FIG. .

(2)記憶工程 (2) Memory engineering

例如，圖1所示之旋轉手段31使保持平台30以所需角度份旋轉，被安置在預定的初期位置，例如成為通過晶圓W的中心Wo與凹口N的假想線與Y軸方向呈平行，而且凹口N位於-Y方向側的狀態的位置。接著，如圖4所示，未圖示之馬達使滾珠螺桿410旋動，臂部412在滾珠螺桿410上朝向+Y方向側移動。伴隨臂部412的移動，厚度測定器40亦在晶圓W的上方，由晶圓W的-Y方向側的外周緣Wd朝向晶圓W的中心Wo，以徑方向，亦即+Y方向移動。其中，隨著厚度測定器40由-Y方向側的外周緣Wd朝向晶圓W的中心Wo，加快藉由移動手段41所致之傳送厚度測定器40的速度。 For example, the rotating means 31 shown in FIG. 1 rotates the holding platform 30 at a required angle and is placed in a predetermined initial position, for example, an imaginary line passing through the center Wo of the wafer W and the notch N is aligned with the Y-axis direction. It is parallel, and the notch N is located at the position on the side of the -Y direction. Next, as shown in FIG. 4, the ball screw 410 is rotated by a motor not shown, and the arm portion 412 moves on the ball screw 410 toward the +Y direction side. Along with the movement of the arm 412, the thickness gauge 40 is also above the wafer W, moving from the outer peripheral edge Wd on the -Y direction side of the wafer W to the center Wo of the wafer W in the radial direction, that is, the +Y direction . Here, as the thickness measuring device 40 moves from the outer peripheral edge Wd on the -Y direction side toward the center Wo of the wafer W, the speed of conveying the thickness measuring device 40 by the moving means 41 is increased.

在晶圓W的上方移動的厚度測定器40的投光部400對晶圓W照射測定光(例如雷射光)，由在受光 部401所受到之在晶圓W的背面Wb作反射的反射光、與在晶圓W的表面Wa作反射的反射光的光路差，厚度測定器40測定晶圓W的厚度。 The light projecting unit 400 of the thickness measuring device 40 moving above the wafer W irradiates the wafer W with measurement light (for example, laser light), The optical path difference between the reflected light reflected on the back surface Wb of the wafer W and the reflected light reflected on the surface Wa of the wafer W received by the portion 401, and the thickness measuring device 40 measures the thickness of the wafer W.

移動手段41使厚度測定器40移動，並且旋轉手段31使保持平台30由+Z方向側觀看以逆時針方向，以晶圓W的初期位置的旋轉角度(0度)為基準進行旋轉，藉此被保持在保持平台30上的晶圓W亦進行旋轉，因此如圖5所示，以由晶圓W的外周緣Wd朝向中心Wo，測定點在背面Wb上描繪由+Z方向觀看為順時鐘方向的螺旋狀軌跡的方式，厚度測定器40測定晶圓W的背面Wb上的全面的各測定點Q1、測定點Q2、測定點Q3、...、測定點Qk...、測定點Qm(k、m為自然數)中的各厚度T1、厚度T2、厚度T3、...、厚度Tk...、厚度Tm(k、m為自然數)。其中，若將厚度測定手段4形成為除了移動手段41之外，具備有可朝X軸方向移動的移動手段的構成時，亦可不使保持平台30旋轉，而使厚度測定器40以Y軸方向及X軸方向移動。 The moving means 41 moves the thickness measuring device 40, and the rotating means 31 rotates the holding platform 30 in the counterclockwise direction when viewed from the +Z direction side with the rotation angle (0 degree) of the initial position of the wafer W as a reference, thereby The wafer W held on the holding platform 30 also rotates. Therefore, as shown in FIG. 5, the measurement point is drawn on the back surface Wb from the outer periphery Wd of the wafer W toward the center Wo, and the measurement point is drawn clockwise from the +Z direction. The thickness measuring device 40 measures all the measuring points Q1, Q2, Q3,..., the measuring points Qk..., the measuring points Qm on the back Wb of the wafer W in a spiral track (k, m are natural numbers) each of thickness T1, thickness T2, thickness T3,..., thickness Tk..., thickness Tm (k, m are natural numbers). However, if the thickness measuring means 4 is formed with a moving means movable in the X-axis direction in addition to the moving means 41, the thickness measuring device 40 may be moved in the Y-axis direction without rotating the holding platform 30. And move in the X axis direction.

厚度測定器40每逢測定各測定點Q1、測定點Q2、測定點Q3、...、測定點Qk...、測定點Qm中的晶圓W的厚度T1、厚度T2、厚度T3、...、厚度Tk...、厚度Tm時，即由讀取部321讀取圖1、4所示之標尺320的刻度，藉此角度辨識部32辨識保持平台30的旋轉角度θ1、旋轉角度θ2、旋轉角度θ3、...、旋轉角度θk...、旋轉角度θm(k、m為自然數)，關於所讀取到的保持平台 30的各旋轉角度(旋轉角度θ1、旋轉角度θ2、旋轉角度θ3、...、旋轉角度θk...、旋轉角度θm)的資訊由角度辨識部32對資料處理手段8被輸出。此外，厚度測定器40每逢測定各測定點Q1、測定點Q2、測定點Q3、...、測定點Qk...、測定點Qm中的晶圓W的厚度T1、厚度T2、厚度T3、...、厚度Tk...、厚度Tm時，讀取部421即讀取標尺420的位置資訊，藉此徑方向位置辨識部42辨識厚度測定器40的徑方向位置，亦即圖5所示之Y軸方向中的各徑方向位置y1、徑方向位置y2、徑方向位置y3、...徑方向位置yk...、徑方向位置ym(k、m為自然數)，針對所讀取到的厚度測定器40的徑方向位置(y1、y2、y3、...yk...、ym)的資訊由徑方向位置辨識部42對資料處理手段8被輸出。 The thickness measuring device 40 measures each measuring point Q1, measuring point Q2, measuring point Q3,..., measuring point Qk..., thickness T1, thickness T2, thickness T3, of the wafer W in the measuring point Qm. .., thickness Tk..., thickness Tm, that is, the reading unit 321 reads the scale of the scale 320 shown in FIGS. 1 and 4, whereby the angle recognition unit 32 recognizes the rotation angle θ1 and the rotation angle of the holding platform 30 θ2, rotation angle θ3,..., rotation angle θk..., rotation angle θm (k, m are natural numbers), about the read holding platform Information on each rotation angle (rotation angle θ1, rotation angle θ2, rotation angle θ3,..., rotation angle θk..., rotation angle θm) of 30 is output from the angle recognition unit 32 to the data processing means 8. In addition, the thickness measuring device 40 measures the thickness T1, thickness T2, and thickness T3 of the wafer W at each measuring point Q1, measuring point Q2, measuring point Q3,..., measuring point Qk..., and measuring point Qm. ,..., thickness Tk..., thickness Tm, the reading unit 421 reads the position information of the scale 420, whereby the radial position recognizing unit 42 recognizes the radial position of the thickness measuring device 40, that is, FIG. 5 Each radial position y1, radial position y2, radial position y3,...radial position yk..., radial position ym (k, m are natural numbers) in the Y-axis direction shown, for all The information on the radial position (y1, y2, y3,... Yk,... Ym) of the thickness measuring device 40 thus read is output to the data processing means 8 by the radial position recognition unit 42.

圖1所示之資料處理手段8的算出部80係由厚度測定器40測定出晶圓W的厚度(厚度T1、厚度T2、厚度T3、...、厚度Tk...、厚度Tm)的各測定點Q1、測定點Q2、測定點Q3、...、測定點Qk、...、測定點Qm中之角度辨識部32所辨識出的保持平台30的旋轉角度(旋轉角度θ1、旋轉角度θ2、旋轉角度θ3、...、旋轉角度θk...、旋轉角度θm)、及徑方向位置辨識部42所辨識出的厚度測定器40的徑方向位置(y1、y2、y3、...、yk...、ym)，算出以晶圓W的凹口N為基準之針對各測定點的面方向的位置，作為X軸方向及Y軸方向的各位置資料。 The calculation unit 80 of the data processing means 8 shown in FIG. 1 measures the thickness of the wafer W (thickness T1, thickness T2, thickness T3,..., thickness Tk..., thickness Tm) by the thickness measuring device 40 Each measuring point Q1, measuring point Q2, measuring point Q3, ..., measuring points Qk, ..., the rotation angle of the holding platform 30 recognized by the angle recognition unit 32 in the measuring point Qm (rotation angle θ1, rotation The angle θ2, the rotation angle θ3,..., the rotation angle θk..., the rotation angle θm), and the radial position (y1, y2, y3, y1, y2, y3, etc.) of the thickness measuring device 40 recognized by the radial position recognition unit 42. .., yk..., ym), calculate the position in the plane direction of each measurement point with the notch N of the wafer W as a reference, as each position data in the X-axis direction and the Y-axis direction.

關於以晶圓W的凹口N為基準的X軸方向及Y軸方向的各位置資料的算出，例如將晶圓W的中心Wo的座標位置設定為原點位置(0、0)。接著，例如在算出圖6所示之測定點Qk的X軸方向及Y軸方向的位置資料時，如圖6所示，由原點位置(0、0)至-Y方向的徑方向位置yk被畫出假想線L1。此外，被畫出由原點位置(0、0)朝向旋轉角度θk方向的假想線L2。此外，由假想線L1的前端朝向-X方向被畫出假想線L3，假想線L3與假想線L2的交點成為測定點Qk。接著，藉由被測定由假想線L1至測定點Qk之X軸方向中的距離，被算出測定點Qk的X軸方向及Y軸方向的位置資料，亦即座標位置(xk、yk)。接著，由測定點Qk的座標位置(xk、yk)，判斷出正在測定形成在晶圓W的表面Wa的元件，亦即分割後的晶片Ck。 For the calculation of each positional data in the X-axis direction and the Y-axis direction based on the notch N of the wafer W, for example, the coordinate position of the center Wo of the wafer W is set as the origin position (0, 0). Next, for example, when calculating the position data in the X-axis direction and the Y-axis direction of the measurement point Qk shown in FIG. 6, as shown in FIG. 6, the radial position yk from the origin position (0, 0) to the -Y direction The imaginary line L1 is drawn. In addition, a virtual line L2 is drawn from the origin position (0, 0) in the direction of the rotation angle θk. In addition, a virtual line L3 is drawn from the tip of the virtual line L1 toward the -X direction, and the intersection of the virtual line L3 and the virtual line L2 becomes the measurement point Qk. Next, by measuring the distance in the X-axis direction from the imaginary line L1 to the measurement point Qk, the position data in the X-axis direction and the Y-axis direction of the measurement point Qk, that is, coordinate positions (xk, yk) are calculated. Next, from the coordinate position (xk, yk) of the measurement point Qk, it is determined that the device formed on the surface Wa of the wafer W, that is, the divided wafer Ck, is being measured.

記憶部81係將算出部80所算出之X軸Y軸平面上的測定點Qk中的晶片Ck的座標位置(xk、yk)、與厚度測定器40所測定出的厚度Tk產生關連地進行記憶。其中，如圖6所示，如晶片Ck般若在晶片上存在複數測定點時(在圖示之例中存在有4個測定點)，將各測定點中的各厚度的平均值設為晶片Ck的厚度。如上所示，記憶部81將圖6所示之晶片C1、晶片C2、晶片C3、...、晶片Ck、...晶片Cm的各座標位置、與厚度測定器40所測定出的各厚度產生關連而作為資料依序記憶。此外，資料處理手段8例如對後述之分割工程後所使用的 圖8所示之拾取裝置6，傳送記憶部81所記憶的資料。 The memory unit 81 stores the coordinate position (xk, yk) of the wafer Ck in the measurement point Qk on the X-axis Y-axis plane calculated by the calculation unit 80 in association with the thickness Tk measured by the thickness measuring device 40. . Among them, as shown in FIG. 6, if there are multiple measurement points on the wafer like wafer Ck (there are four measurement points in the example shown in the figure), the average value of each thickness at each measurement point is taken as wafer Ck thickness of. As shown above, the memory portion 81 combines the coordinate positions of the wafer C1, the wafer C2, the wafer C3, ..., the wafer Ck, ... the wafer Cm shown in FIG. 6 with the thicknesses measured by the thickness measuring device 40 Generate connections and sequentially remember as data. In addition, the data processing means 8, for example, is used after the division process described later The pickup device 6 shown in FIG. 8 transfers the data stored in the storage unit 81.

(3)分割工程 (3) Divide the project

在實施記憶工程之後，如圖7所示，實施沿著分割預定線S分割晶圓W，且形成為晶片C的分割工程。晶圓W的分割係例如使用切削裝置2來實施。其中，晶圓W係在被搬送至切削裝置2之前，藉由圖1所示之研削裝置1的洗淨手段17予以洗淨，接著，被搬送至未圖示的膠帶安裝機。在膠帶安裝機中，晶圓W係如圖7所示，形成為在晶圓的背面Wb被貼著切割帶P1，且透過切割帶P1被支持在環狀框架F的狀態。此外，圖1所示之保護構件P由晶圓W的表面Wa被剝離。 After the memory process is performed, as shown in FIG. 7, a dividing process of dividing the wafer W along the planned dividing line S and forming the wafer C is performed. The division of the wafer W is performed, for example, using the cutting device 2. Among them, the wafer W is cleaned by the cleaning means 17 of the grinding apparatus 1 shown in FIG. 1 before being transported to the cutting device 2, and then transported to a tape attaching machine not shown. In the tape mounter, as shown in FIG. 7, the wafer W is formed in a state where the dicing tape P1 is attached to the back surface Wb of the wafer and is supported by the ring frame F through the dicing tape P1. In addition, the protective member P shown in FIG. 1 is peeled off from the surface Wa of the wafer W.

圖7所示之切削裝置2係至少具備有：保持晶圓W的吸盤平台21；具備有將被保持在吸盤平台21上的晶圓W切削的切削刀220的切削手段22；及檢測被保持在吸盤平台21上的晶圓W應切削的分割預定線S的對準手段23。 The cutting device 2 shown in FIG. 7 is provided with at least: a chuck table 21 for holding a wafer W; a cutting means 22 provided with a cutter 220 for cutting the wafer W held on the chuck table 21; and detecting the held The aligning means 23 of the planned dividing line S where the wafer W on the chuck table 21 should be cut.

對準手段23係可根據藉由攝影機230所取得的畫像，檢測分割預定線S。對準手段23與切削手段22係形成為一體而構成，兩者連動朝Y軸方向及Z軸方向移動。 The alignment means 23 can detect the planned dividing line S based on the image obtained by the camera 230. The aligning means 23 and the cutting means 22 are formed integrally, and both move in the Y-axis direction and the Z-axis direction in conjunction.

吸盤平台21係可在保持面21a上吸引保持晶圓W，且可藉由旋轉手段21b旋轉地予以支持，而且可藉由未圖示之切削進給手段，在X軸方向移動。此外，在吸 盤平台21的周圍配設有固定環狀框架F的固定夾具21c。 The chuck table 21 can suck and hold the wafer W on the holding surface 21a, and can be rotatably supported by a rotating means 21b, and can be moved in the X-axis direction by a cutting and feeding means not shown. In addition, sucking A fixing jig 21c for fixing the ring frame F is arranged around the disk platform 21.

切削手段22係可以Y軸方向及Z軸方向移動。切削手段22所配備的切削刀220係例如可旋轉地被裝設在可旋轉地被收容在轉軸套221中且軸方向相對X軸方向以水平方向呈正交的方向(Y軸方向)亦即轉軸222。接著，伴隨轉軸222藉由未圖示之馬達被旋轉驅動，切削刀220亦進行高速旋轉。 The cutting means 22 can move in the Y-axis direction and the Z-axis direction. The cutting blade 220 equipped with the cutting means 22 is, for example, rotatably mounted in the rotating shaft sleeve 221 and rotatably housed in the shaft sleeve 221, and the axis direction is perpendicular to the X axis direction and the horizontal direction (Y axis direction), that is, Rotating shaft 222. Then, as the rotating shaft 222 is rotationally driven by a motor not shown, the cutting blade 220 also rotates at a high speed.

首先，將透過切割帶P1而被支持在環狀框架F的晶圓W，以晶圓W的表面Wa成為上側的方式載置於吸盤平台21上。接著，藉由固定夾具21c固定環狀框架F，且在吸盤平台21的保持面21a上吸引保持晶圓W。 First, the wafer W supported by the ring frame F through the dicing tape P1 is placed on the chuck table 21 so that the surface Wa of the wafer W becomes the upper side. Next, the ring frame F is fixed by the fixing jig 21c, and the wafer W is sucked and held on the holding surface 21a of the chuck platform 21.

被保持在吸盤平台21的晶圓W以-X方向被傳送，並且藉由對準手段23，被檢測使切削刀220切入的分割預定線S的位置。伴隨分割預定線S被檢測，切削手段22朝Y軸方向移動，進行應切削的分割預定線S與切削刀220的Y軸方向中的對位。 The wafer W held on the chuck table 21 is transported in the −X direction, and by the alignment means 23, the position of the planned dividing line S into which the cutter 220 is cut is detected. As the planned dividing line S is detected, the cutting means 22 moves in the Y-axis direction, and alignment of the planned dividing line S to be cut with the cutting blade 220 in the Y-axis direction is performed.

保持晶圓W的吸盤平台21另外以-X方向被送出，並且切削手段22以-Z方向降下。此外，轉軸222旋轉，切削刀220一邊伴隨轉軸222的旋轉而旋轉，一邊切入至晶圓W，將分割預定線S切削。 The chuck table 21 holding the wafer W is additionally sent out in the -X direction, and the cutting means 22 is lowered in the -Z direction. In addition, the rotating shaft 222 rotates, and the cutting blade 220 cuts into the wafer W while rotating with the rotation of the rotating shaft 222, and cuts the planned dividing line S.

若晶圓W被送至切削刀220切削結束分割預定線S的X軸方向的預定的位置時，一度停止晶圓W的切削進給，使切削刀220由晶圓W以+Z方向間離，接 著，使晶圓W以+X方向移動而返回至原本的位置。接著，按每個相鄰分割預定線S的間隔，將切削刀220一邊朝Y軸方向(在圖示之例中為-Y方向)進行分級進給一邊依序進行同樣的切削，另外使晶圓W藉由旋轉手段21b旋轉90度之後再進行同樣的切削，藉此沿著晶圓W的全部分割預定線S進行切削，將晶圓W分割成晶片C。 When the wafer W is sent to a predetermined position in the X-axis direction of the cutting end and dividing line S of the cutter 220, the cutting feed of the wafer W is stopped once, and the cutter 220 is separated from the wafer W in the +Z direction , Then Then, the wafer W is moved in the +X direction to return to its original position. Next, according to the interval of each adjacent predetermined dividing line S, the cutting blade 220 is sequentially fed in the Y-axis direction (the -Y direction in the example) while performing the same cutting sequentially, and the crystal The circle W is rotated by 90 degrees by the rotation means 21b and then the same cutting is performed, whereby the cutting is performed along all the planned dividing lines S of the wafer W, and the wafer W is divided into wafers C.

其中，分割工程亦可藉由以下任何方法。 Among them, the division process can also be done by any of the following methods.

(甲)沿著分割預定線S，照射對晶圓W具吸收性的波長的雷射光來進行燒蝕加工，藉此將分割預定線S完全切斷而分割成晶片C的方法。 (A) A method of irradiating the wafer W along the planned dividing line S with laser light having a wavelength that is absorptive to the wafer W to perform ablation, thereby completely cutting the planned dividing line S and dividing the wafer C into wafers C.

(乙)沿著分割預定線S，照射對晶圓W具吸收性的波長的雷射光來進行燒蝕加工，藉此在分割預定線S形成燒蝕溝槽後，將該晶圓W以面方向擴展而分割成晶片C的方法。 (B) Along the planned dividing line S, laser light of a wavelength that is absorptive to the wafer W is irradiated to perform ablation processing, thereby forming an ablation groove on the planned dividing line S, and then the wafer W The method of dividing into wafer C by expanding the direction.

(丙)沿著分割預定線S，照射對晶圓W具吸收性的波長的雷射光，在內部形成改質層之後，將該晶圓W以面方向擴展而分割成晶片C的方法。 (C) A method of irradiating laser light with a wavelength that is absorbing to the wafer W along the planned dividing line S to form a modified layer inside, and then expanding the wafer W in the surface direction to divide the wafer C into wafers C.

(4)拾取工程 (4) Pickup project

透過切割帶P1而被支持在環狀框架F的狀態的晶片C係被搬送至圖8所示之拾取裝置6。拾取裝置6係以未圖示之夾具等固定環狀框架F，且以例如可朝Z軸方向升降的針60，由下側透過切割帶P1上頂晶片C，以吸引墊61吸引保持晶片C由切割帶P1上浮之處來進行拾取的裝 置。 The wafer C in a state supported by the ring frame F through the dicing tape P1 is transferred to the pickup device 6 shown in FIG. 8. The picking device 6 fixes the ring frame F with a jig not shown in the figure, and uses, for example, a needle 60 that can be raised and lowered in the Z-axis direction to pass through the dicing tape P1 from the lower side to top the wafer C, and attract and hold the wafer C by a suction pad 61 Pick up from where the cutting tape P1 floats Set.

在此，在拾取裝置6係預先由資料處理手段8被傳送使晶片C的各座標位置與厚度測定器40所測定出的各厚度產生關連的資料。拾取裝置6係由被送出的資料中選擇預先設定的容許厚度範圍內的晶片C來進行拾取。因此，在多數的晶片C之中，可僅拾取良品，變得不需要白費工地拾取晶片C，而且變得不需要按每個晶片C以測定器由上下方向夾入晶片C來測定厚度，因此不會有在厚度測定耗費很多時間，可效率佳地獲得良品晶片。 Here, in the pick-up device 6, the data is transferred in advance by the data processing means 8 so that the respective coordinate positions of the wafer C are related to the respective thicknesses measured by the thickness measuring device 40. The pick-up device 6 picks up wafers C within a predetermined allowable thickness range from the sent data. Therefore, among a large number of wafers C, only good products can be picked up. It becomes unnecessary to pick up the wafer C in vain, and it becomes unnecessary to sandwich the wafer C in the vertical direction with a measuring device for each wafer C to measure the thickness. It does not take a lot of time to measure the thickness, and good quality wafers can be obtained efficiently.

其中，本發明之研削裝置1並非為限定於上述實施形態者，此外，關於所附圖面所圖示之各構成的大小或形狀等，亦非限定於此，可在可發揮本發明之效果的範圍內作適當變更。 However, the grinding device 1 of the present invention is not limited to the above-mentioned embodiment. In addition, the size or shape of each structure shown in the drawings is not limited to this, and the effects of the present invention can be exerted. Make appropriate changes within the scope of the

例如，圖9所示之研削裝置1A係變更圖1所示之研削裝置1的構成的一部分的裝置。研削裝置1A的洗淨手段17係例如單片旋轉式的洗淨手段，具有：具備有作為可旋轉之旋轉平台的保持平台170的保持手段17a。接著，在保持平台170的下側配設有旋轉手段31及角度辨識部32。接著，角度辨識部32係連接於資料處理手段8。 For example, the grinding apparatus 1A shown in FIG. 9 is an apparatus which changes a part of the structure of the grinding apparatus 1 shown in FIG. The cleaning means 17 of the grinding apparatus 1A is, for example, a single-piece rotary cleaning means, and has a holding means 17a provided with a holding platform 170 as a rotatable rotating platform. Next, the rotating means 31 and the angle recognition unit 32 are arranged on the lower side of the holding platform 170. Next, the angle recognition unit 32 is connected to the data processing means 8.

在研削裝置1A中，厚度測定手段4A係配設在鄰接保持平台170的位置。厚度測定手段4A係具備有：厚度測定器40；使厚度測定器40至少以晶圓W的徑方向移動的移動手段49；及辨識厚度測定器40的位置的 徑方向位置辨識部42。 In the grinding apparatus 1A, the thickness measuring means 4A is arranged at a position adjacent to the holding platform 170. The thickness measuring device 4A is provided with: a thickness measuring device 40; a moving device 49 for moving the thickness measuring device 40 at least in the radial direction of the wafer W; and a device for recognizing the position of the thickness measuring device 40 Radial direction position recognition unit 42.

移動手段49係具備有：具有Y軸方向的軸心的滾珠螺桿490；在中空中支持滾珠螺桿490的兩端的橋狀基部491；內部的螺帽螺合在滾珠螺桿490而在滾珠螺桿490上朝向Y軸方向作往返移動的可動部492；及連結於滾珠螺桿490的一端且使滾珠螺桿490旋動之未圖示之馬達。在可動部492的-X方向側的側面配設有厚度測定器40，若未圖示之馬達使滾珠螺桿410旋動，伴隨此，可動部492在滾珠螺桿490上以Y軸方向往返移動，厚度測定器40在保持平台170的上方以Y軸方向往返移動。其中，亦可將厚度測定手段4A，除了移動手段49之外，具備可朝X軸方向移動的移動手段，使得厚度測定器40亦可朝X軸方向移動。徑方向位置辨識部42係例如形成為藉由配設在可動部492上的讀取部421，讀取沿著可動部492的移動方向(Y軸方向)延伸之形成在基部411的上面的標尺420的位置資訊(刻度)的構成。接著，厚度測定手段4A係連接於資料處理手段8。 The moving means 49 is provided with: a ball screw 490 having an axis in the Y-axis direction; a bridge-shaped base 491 supporting both ends of the ball screw 490 in the middle; and an internal nut screwed on the ball screw 490 and on the ball screw 490 A movable portion 492 that reciprocates in the Y-axis direction; and a motor not shown in the figure that is connected to one end of the ball screw 490 and rotates the ball screw 490. The thickness measuring device 40 is arranged on the side surface of the movable part 492 on the -X direction side. If a motor (not shown) rotates the ball screw 410, the movable part 492 reciprocates on the ball screw 490 in the Y-axis direction. The thickness measuring device 40 reciprocates in the Y-axis direction above the holding platform 170. However, the thickness measuring means 4A may be provided with a moving means movable in the X-axis direction in addition to the moving means 49, so that the thickness measuring device 40 can also be moved in the X-axis direction. The radial position recognizing section 42 is formed, for example, by the reading section 421 provided on the movable section 492 to read a scale formed on the upper surface of the base section 411 extending along the moving direction (Y-axis direction) of the movable section 492 The structure of 420 position information (scale). Next, the thickness measuring means 4A is connected to the data processing means 8.

若使用研削裝置1A來實施本發明之元件之製造方法，在實施(1)研削工程之後，經研削的晶圓W藉由卸載臂16被搬送至洗淨手段17，藉由保持手段17a及厚度測定手段4A，實施(2)記憶工程。 If the grinding device 1A is used to implement the method of manufacturing the device of the present invention, after the (1) grinding process is performed, the polished wafer W is transported to the cleaning means 17 by the unloading arm 16, and the holding means 17a and thickness Measuring means 4A, implement (2) memory engineering.

例如，為了實施本發明之元件之製造方法，亦可形成為排列研削裝置1、及在(1)研削工程後搬送晶圓W的膠帶安裝機，在研削裝置1與膠帶安裝機之裝 置間，獨立配設厚度測定手段與保持手段者。或者，亦可形成為在膠帶安裝機的裝置內具備有：厚度測定手段、及保持手段的構成。接著，亦可形成為以獨立配設在研削裝置1與膠帶安裝機之間的厚度測定手段、及保持手段，進行(2)記憶工程，或者以膠帶安裝機的裝置內所配備的厚度測定手段、及保持手段，進行(2)記憶工程者。 For example, in order to implement the manufacturing method of the device of the present invention, it can also be formed as an arrangement and grinding device 1 and a tape mounter that transports the wafer W after the (1) grinding process. The grinding device 1 and the tape mounter are installed Set the thickness measurement means and maintaining means independently. Alternatively, it may be configured to include a thickness measuring means and a holding means in the device of the tape mounting machine. Then, it can also be formed as (2) the memory process with the thickness measuring means and holding means separately arranged between the grinding device 1 and the tape mounting machine, or the thickness measuring means provided in the tape mounting machine , And means of preservation, those who perform (2) memory engineering.

2.第2實施形態 2. The second embodiment (1)溝槽形成工程 (1) Groove formation project

例如圖10(a)所示，在圖7所示之切削裝置2的吸盤平台21保持切割帶P1側，且使晶圓W的表面Wa露出。接著，將進行旋轉的切削刀220定位在分割預定線S的上方，並且以切削刀220的下端位於比晶圓W的表面Wa更為下方的方式進行定位，在該狀態下，使吸盤平台21與切削手段22以X軸方向相對移動，藉此沿著分割預定線S，形成預定深度的溝槽G。針對全部分割預定線S，縱橫進行如上所示之切削。 For example, as shown in FIG. 10(a), the chuck table 21 of the cutting device 2 shown in FIG. 7 holds the dicing tape P1 side, and exposes the surface Wa of the wafer W. Next, the rotating cutter 220 is positioned above the planned dividing line S, and the lower end of the cutter 220 is positioned below the surface Wa of the wafer W. In this state, the chuck table 21 By moving relative to the cutting means 22 in the X-axis direction, a groove G of a predetermined depth is formed along the planned dividing line S. For all the planned dividing lines S, the cutting as shown above is carried out vertically and horizontally.

其中，溝槽G亦可藉由利用雷射光照射所為之燒蝕加工而形成。例如，如圖10(b)所示，在雷射加工裝置的吸盤平台90保持晶圓W的背面Wb側。接著，由照射頭91照射對晶圓W具吸收性的波長的雷射光910，使照射頭91對晶圓W沿著分割預定線S以X軸方向相對移動，藉此將分割預定線S進行燒蝕加工而形成溝槽G。針對全部分割預定線S，縱橫進行如上所示之雷射 加工。 Among them, the groove G can also be formed by ablation processing by laser light irradiation. For example, as shown in FIG. 10(b), the back surface Wb side of the wafer W is held on the chuck stage 90 of the laser processing apparatus. Next, the irradiating head 91 irradiates the laser light 910 with a wavelength that is absorptive to the wafer W, and the irradiating head 91 is moved relative to the wafer W along the planned dividing line S in the X-axis direction, thereby performing the planned dividing line S. The trench G is formed by ablation processing. For all the predetermined dividing lines S, perform the laser as shown above vertically and horizontally Processing.

(2)研削工程 (2) Research engineering

接著，將切割帶P1由背面Wb剝離，並且如圖10(c)所示，在形成有溝槽G的表面Wa貼著保護構件P，且在例如圖1所示之研削裝置1的保持平台30保持保護構件P側。接著，保持有晶圓W的保持平台30以預定速度旋轉，並且研削輪74以預定速度旋轉，因研削手段7下降，旋轉的研削石740研削背面Wb，且將晶圓W薄化。 Next, the dicing tape P1 is peeled from the back surface Wb, and as shown in FIG. 10(c), the protective member P is attached to the surface Wa on which the groove G is formed, and is placed on the holding platform of the grinding device 1 shown in FIG. 30 keeps the protective member P side. Next, the holding platform 30 holding the wafer W is rotated at a predetermined speed, and the grinding wheel 74 is rotated at a predetermined speed. As the grinding means 7 is lowered, the rotating grinding stone 740 grinds the back surface Wb and thins the wafer W.

(3)分割工程 (3) Divide the project

若藉由繼續進行研削工程，使晶圓W的薄化進展，不久如圖10(d)所示，溝槽G由被研削面側表露出，晶圓W被分割成晶片C。之後亦視需要進行研削，藉此將各個晶片C形成為預定的厚度。其中，晶圓W被分割成晶片C之後亦為全部晶片C被貼著在保護構件P的狀態，因此全體維持晶圓W的形狀。 If the grinding process is continued and the thinning of the wafer W progresses, as shown in FIG. 10(d) soon, the groove G is exposed from the surface to be ground, and the wafer W is divided into wafers C. Afterwards, grinding is also performed as necessary, thereby forming each wafer C to a predetermined thickness. Among them, after the wafer W is divided into the wafers C, all the wafers C are attached to the protective member P, so the shape of the wafer W is maintained as a whole.

(4)記憶工程 (4) Memory Engineering

在分割工程之後，使用例如圖1所示之厚度測定手段4，求出各個晶片C的厚度。接著，記憶部81將各晶片的座標位置、與厚度測定器40所測定到的各厚度產生關連而作為資料依序記憶。本工程係與第1實施形態同樣地實 施。其中，若在溝槽G的位置進行厚度測定，由於無法獲得適當的值，因此若藉由測定所求出的厚度的值為小於預定的臨限值的值時，即忽略該值。 After the dividing process, the thickness of each wafer C is obtained by using the thickness measuring means 4 shown in FIG. 1, for example. Next, the storage unit 81 associates the coordinate positions of each wafer with each thickness measured by the thickness measuring device 40 and sequentially stores them as data. This engineering department is implemented in the same way as the first embodiment Shi. However, if the thickness is measured at the position of the groove G, an appropriate value cannot be obtained. Therefore, if the value of the thickness obtained by the measurement is less than a predetermined threshold value, the value is ignored.

(5)擴展工程 (5) Expansion project

在記憶工程之後，如圖10(e)所示，在晶片C的背面側貼著擴展膠帶P2，且以環狀框架F1支持擴展膠帶P2。此外，將保護構件P由晶片C的表面剝離。接著，在擴展裝置中，將擴展膠帶P2側載置於平台93，並且在框架保持部94保持環狀框架F1，且使框架保持部94對平台93以下方向相對移動，藉此使擴展膠帶P2以面方向以放射狀伸張。如此一來，鄰接晶片C的晶片間隔擴寬。擴展裝置係定量掌握擴展膠帶P2的擴張量，且將該擴張量的值轉送至之後的拾取工程中所使用的拾取裝置。 After the memory process, as shown in FIG. 10(e), the expansion tape P2 is pasted on the back side of the chip C, and the expansion tape P2 is supported by the ring frame F1. In addition, the protective member P is peeled from the surface of the wafer C. Next, in the expansion device, the expansion tape P2 side is placed on the platform 93, and the ring frame F1 is held in the frame holding portion 94, and the frame holding portion 94 is relatively moved below the platform 93, thereby making the expansion tape P2 It stretches radially in the surface direction. In this way, the wafer interval adjacent to the wafer C is widened. The expansion device quantitatively grasps the expansion amount of the expansion tape P2, and transfers the value of the expansion amount to the pickup device used in the subsequent pickup process.

(6)拾取工程 (6) Pickup project

藉由擴展工程，使晶片間隔被擴寬後，由擴展膠帶P2拾取各個晶片C。晶片C的拾取係與第1實施形態同樣地進行，但是藉由擴展工程，各晶片C朝徑方向移動，因此根據擴展膠帶P2的擴展量，調節拾取位置。例如，將擴展量除以分割預定線S的數量，藉此算出擴展工程中的各個晶片C的偏移量，若以該偏移量份調整拾取位置，可拾取所希望的晶片C。 Through the expansion process, after the chip interval is widened, each chip C is picked up by the expansion tape P2. The pick-up system of the wafer C is performed in the same manner as in the first embodiment, but since each wafer C is moved in the radial direction by the expansion process, the pickup position is adjusted according to the expansion amount of the expansion tape P2. For example, the expansion amount is divided by the number of planned dividing lines S to calculate the offset amount of each wafer C in the expansion process. If the pickup position is adjusted by the offset amount, the desired wafer C can be picked up.

在藉由以上順序所實施的第2實施形態中， 在晶圓W被分割成晶片C之後測定晶片C的厚度，但是在記憶工程中，由於在晶片C全體維持晶圓W的形狀的狀態下測定晶片C的厚度，因此較有效率。 In the second embodiment implemented through the above sequence, The thickness of the wafer C is measured after the wafer W is divided into the wafer C. However, in the memory process, the thickness of the wafer C is measured while the entire wafer C maintains the shape of the wafer W, so it is more efficient.

3.第3實施形態 3. The third embodiment (1)改質層形成工程(以雷射在內部形成改質層) (1) Modified layer formation process (a laser is used to form a modified layer inside)

如圖11(a)所示，在晶圓W的背面Wb貼著切割帶P1，在雷射加工裝置的吸盤平台90保持切割帶P1側。接著，由照射頭91照射對晶圓W具透過性的波長的雷射光911，且使照射頭91相對晶圓W沿著分割預定線S以X軸方向作相對移動，藉此沿著分割預定線S，在晶圓W的內部形成改質層G1。沿著全部分割預定線S，縱橫進行如上所示之改質層形成加工。 As shown in FIG. 11(a), the dicing tape P1 is attached to the back surface Wb of the wafer W, and the dicing tape P1 side is held on the chuck table 90 of the laser processing apparatus. Next, the irradiation head 91 irradiates the laser light 911 with a wavelength that is transparent to the wafer W, and moves the irradiation head 91 relative to the wafer W along the planned dividing line S in the X-axis direction, thereby following the planned dividing line. Line S forms a modified layer G1 inside the wafer W. Along all the planned dividing lines S, the modified layer forming process as shown above is performed vertically and horizontally.

(2)研削工程 (2) Research engineering

接著，如圖11(b)所示，在形成有改質層G1的晶圓W的表面Wa貼著保護構件P，並且將切割帶P1由背面Wb側剝離。接著，在例如圖1所示之研削裝置1的保持平台30，保持保護構件P側。接著，保持有晶圓W的保持平台30以預定速度旋轉，並且研削輪74以預定速度旋轉，研削手段7下降，藉此旋轉的研削石740研削背面Wb，且將晶圓W薄化。 Next, as shown in FIG. 11(b), the protective member P is attached to the surface Wa of the wafer W on which the modified layer G1 is formed, and the dicing tape P1 is peeled from the back surface Wb side. Next, for example, the holding platform 30 of the grinding apparatus 1 shown in FIG. 1 holds the protective member P side. Next, the holding platform 30 holding the wafer W is rotated at a predetermined speed, and the grinding wheel 74 is rotated at a predetermined speed, and the grinding means 7 is lowered, whereby the rotating grinding stone 740 grinds the back surface Wb and thins the wafer W.

(3)分割工程 (3) Divide the project

若藉由繼續進行研削工程而使晶圓W的薄化進展時，不久如圖11(c)所示，以改質層G1為起點而在表面Wa側形成裂痕CR，且藉由改質層G1及裂痕CR，晶圓W沿著分割預定線S被分割成各個晶片C。此外，之後亦視需要進行研削，藉此將各個晶片C形成為預定的厚度。其中，晶圓W被分割成晶片C之後亦為全部晶片C被貼著在保護構件P的狀態，因此全體維持晶圓W的形狀。 If the thinning of the wafer W progresses by continuing the grinding process, soon as shown in FIG. 11(c), a crack CR is formed on the surface Wa side from the modified layer G1 as a starting point, and the modified layer G1 and the crack CR, the wafer W is divided into individual wafers C along the planned dividing line S. In addition, afterwards, grinding is performed as needed, thereby forming each wafer C to a predetermined thickness. Among them, after the wafer W is divided into the wafers C, all the wafers C are attached to the protective member P, so the shape of the wafer W is maintained as a whole.

(4)記憶工程 (4) Memory Engineering

在分割工程之後，使用例如圖1所示之厚度測定手段4，求出各個晶片C的厚度。接著，記憶部81將各晶片的座標位置、與厚度測定器40所測定出的各厚度產生關連而作為資料依序記憶。本工程係與第1實施形態及第2實施形態同樣地實施。 After the dividing process, the thickness of each wafer C is obtained by using the thickness measuring means 4 shown in FIG. 1, for example. Next, the storage unit 81 associates the coordinate position of each wafer with each thickness measured by the thickness measuring device 40 and sequentially stores them as data. This engineering system is implemented in the same manner as the first embodiment and the second embodiment.

(5)擴展工程 (5) Expansion project

在記憶工程之後，如圖11(d)所示，在晶片C的背面側貼著擴展膠帶P2，且以環狀框架F1支持擴展膠帶P2。此外，將保護構件P由晶片C的表面剝離。接著，在擴展裝置中，將擴展膠帶P2側載置在平台93，並且在框架保持部94保持環狀框架F1，且使框架保持部94對平台93以下方向相對移動，藉此使擴展膠帶P2以面方向以放射狀伸張。如此一來，鄰接晶片C的晶片間隔擴寬。 擴展裝置係定量掌握擴展膠帶P2的擴張量，且將該擴張量的值轉送至在之後的拾取工程中所使用的拾取裝置。 After the memory process, as shown in FIG. 11(d), the expansion tape P2 is attached to the back side of the wafer C, and the expansion tape P2 is supported by the ring frame F1. In addition, the protective member P is peeled from the surface of the wafer C. Next, in the expansion device, the expansion tape P2 side is placed on the platform 93, the ring frame F1 is held in the frame holding portion 94, and the frame holding portion 94 is relatively moved below the platform 93, thereby making the expansion tape P2 It stretches radially in the surface direction. In this way, the wafer interval adjacent to the wafer C is widened. The expansion device quantitatively grasps the expansion amount of the expansion tape P2, and transfers the value of the expansion amount to the pickup device used in the subsequent pickup process.

(6)拾取工程 (6) Pickup project

在藉由擴展工程被擴寬晶片間隔之後，由擴展膠帶P2拾取各個晶片C。晶片C的拾取係與第1實施形態同樣地進行，但是藉由擴展工程，各晶片C朝徑方向移動，因此根據擴展膠帶P2的擴展量，調節拾取位置。例如，將擴展量除以分割預定線S的數量，藉此算出擴展工程中的各個晶片C的偏移量，若以該偏移量份調整拾取位置，可拾取所希望的晶片C。 After the chip interval is widened by the expansion process, each chip C is picked up by the expansion tape P2. The pick-up system of the wafer C is performed in the same manner as in the first embodiment, but since each wafer C is moved in the radial direction by the expansion process, the pickup position is adjusted according to the expansion amount of the expansion tape P2. For example, the expansion amount is divided by the number of planned dividing lines S to calculate the offset amount of each wafer C in the expansion process. If the pickup position is adjusted by the offset amount, the desired wafer C can be picked up.

在藉由以上順序所實施的第3實施形態中，在晶圓W被分割成晶片C之後測定晶片C的厚度，但是在記憶工程中，由於在晶片C全體維持晶圓W的形狀的狀態下測定晶片C的厚度，因此較有效率。 In the third embodiment implemented by the above procedure, the thickness of the wafer C is measured after the wafer W is divided into the wafer C. However, in the memory process, since the entire wafer C maintains the shape of the wafer W It is more efficient to measure the thickness of wafer C.

1‧‧‧研削裝置 1‧‧‧ Grinding device

10‧‧‧基座 10‧‧‧Base

A‧‧‧安裝卸下區域 A‧‧‧Installation and removal area

B‧‧‧研削區域 B‧‧‧Grinding area

110‧‧‧第1匣盒載置部 110‧‧‧The first cassette placement part

110a‧‧‧第1匣盒 110a‧‧‧Box 1

111‧‧‧第2匣盒載置部 111‧‧‧The second cassette placement part

111a‧‧‧第2匣盒 111a‧‧‧Box 2

12‧‧‧機器人 12‧‧‧Robot

14‧‧‧凹口檢測手段 14‧‧‧Notch detection method

140‧‧‧檢測用平台 140‧‧‧Testing platform

141‧‧‧高速度攝影機 141‧‧‧High Speed Camera

142‧‧‧畫像處理部 142‧‧‧Image Processing Department

15‧‧‧裝載臂 15‧‧‧Loading arm

16‧‧‧卸載臂 16‧‧‧Unloading arm

17‧‧‧洗淨手段 17‧‧‧Washing method

18‧‧‧一對高度規 18‧‧‧A pair of height gauges

181‧‧‧第1高度規 181‧‧‧The first height gauge

182‧‧‧第2高度規 182‧‧‧The second height gauge

19‧‧‧支柱 19‧‧‧Pillars

3‧‧‧保持手段 3‧‧‧Keep the means

30‧‧‧保持平台 30‧‧‧Maintain the platform

300‧‧‧吸附部 300‧‧‧Adsorption part

300a‧‧‧保持面 300a‧‧‧Keep the surface

301‧‧‧框體 301‧‧‧Frame

30c‧‧‧吸盤平台的中心 30c‧‧‧The center of the suction cup platform

31‧‧‧旋轉手段 31‧‧‧Rotating means

310‧‧‧旋轉軸 310‧‧‧Rotation axis

311‧‧‧馬達 311‧‧‧Motor

32‧‧‧角度辨識部 32‧‧‧Angle Recognition Department

320‧‧‧標尺 320‧‧‧Ruler

321‧‧‧讀取部 321‧‧‧Reading section

321a‧‧‧纜線 321a‧‧‧Cable

4‧‧‧厚度測定手段 4‧‧‧Thickness measurement method

40‧‧‧厚度測定器 40‧‧‧Thickness Tester

41‧‧‧移動手段 41‧‧‧Means of movement

410‧‧‧滾珠螺桿 410‧‧‧Ball screw

411‧‧‧基部 411‧‧‧Base

412‧‧‧臂部 412‧‧‧Arm

42‧‧‧徑方向位置辨識部 42‧‧‧Radial direction position recognition part

420‧‧‧標尺 420‧‧‧ Ruler

421‧‧‧讀取部 421‧‧‧Reading section

5‧‧‧研削進給手段 5‧‧‧ Grinding feed method

50‧‧‧滾珠螺桿 50‧‧‧Ball screw

51‧‧‧導軌 51‧‧‧Guide

52‧‧‧馬達 52‧‧‧Motor

53‧‧‧升降板 53‧‧‧Lift board

54‧‧‧保持具 54‧‧‧Retainer

7‧‧‧研削手段 7‧‧‧Researching methods

70‧‧‧轉軸 70‧‧‧Shaft

71‧‧‧轉軸套 71‧‧‧Rotary sleeve

72‧‧‧轉軸馬達 72‧‧‧Shaft Motor

73‧‧‧架座 73‧‧‧Frame seat

74‧‧‧研削輪 74‧‧‧grinding wheel

740‧‧‧研削石 740‧‧‧ Grinding Stone

741‧‧‧輪基台 741‧‧‧wheel abutment

8‧‧‧資料處理手段 8‧‧‧Data processing methods

80‧‧‧算出部 80‧‧‧Calculation Department

81‧‧‧記憶部 81‧‧‧Memory Department

W‧‧‧晶圓 W‧‧‧wafer

Wa‧‧‧晶圓的表面 Wa‧‧‧The surface of the wafer

Wb‧‧‧晶圓的背面 Wb‧‧‧The back of the wafer

Wd‧‧‧晶圓的外周緣 Wd‧‧‧The outer periphery of the wafer

Wo‧‧‧晶圓的中心 Wo‧‧‧The center of the wafer

N‧‧‧凹口 N‧‧‧Notch

S‧‧‧分割預定線 S‧‧‧Divide line

D‧‧‧元件 D‧‧‧Component

P‧‧‧保護構件 P‧‧‧Protection member

Claims (4)

一種元件之製造方法，其係具備有：研削工程，其係將具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的背面，以研削石進行研削；及分割工程，其係在該研削工程之後，將晶圓沿著該分割預定線進行分割而形成為晶片，該元件之製造方法係包含：記憶工程，其係由該研削工程之後至該分割工程之前，測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶；及拾取工程，其係在該分割工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取。 A method for manufacturing a device includes: a grinding process, which is to grind the back surface of a wafer on which the device is formed with a mark indicating the crystal orientation and the surface is zoned by a predetermined dividing line with a grinding stone; and The dividing process is after the grinding process, the wafer is divided along the predetermined dividing line to form a chip. The manufacturing method of the device includes: a memory process, which is from after the grinding process to before the dividing process , Measure the thickness of each chip, and memorize the measured position data of the chip in association with the thickness value of the chip; and the picking process, which is after the division process, based on the memory in the memory process The thickness of the wafer and the position data are selected to pick up wafers within a predetermined allowable thickness range. 一種元件之製造方法，其係具備有：溝槽形成工程，其係在具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的該表面，沿著該分割預定線形成不貫穿至該背面的溝槽；研削工程，其係研削晶圓的該背面；分割工程，其係藉由該背面的研削，使該溝槽由該背面側表露出而將晶圓分割成晶片；及擴展工程，其係將被分割成晶片的晶圓以面方向擴張 而將晶片間隔擴寬，該元件之製造方法係實施：記憶工程，其係由該分割工程之後至該擴展工程之前，測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶，且包含：拾取工程，其係在該擴展工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取。 A method of manufacturing a device includes: a trench formation process, which is provided with a mark indicating a crystal orientation and is divided by a predetermined dividing line on the surface to form a device on the surface of the wafer along the division The predetermined line forms a groove that does not penetrate the back surface; the grinding process is to grind the back surface of the wafer; the dividing process is to grind the back surface so that the groove is exposed from the back surface side to expose the wafer Dividing into chips; and expansion process, which expands the divided wafers in the surface direction To widen the chip spacing, the device manufacturing method is implemented: memory engineering, which measures the thickness of each chip from after the division process to before the expansion process, and combines the measured position data of the chip with The thickness value of the chip is memorized in a related manner, and includes: a picking process, which is after the expansion process, according to the thickness value of the chip memorized in the memory process, and the position data, select a predetermined allowable thickness range Of wafers for picking. 一種元件之製造方法，其係具備有：改質層形成工程，其係在具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的內部，沿著該分割預定線形成改質層；研削工程，其係研削晶圓的該背面；分割工程，其係藉由該背面的研削，使以該改質層為起點的裂痕朝向該表面產生而將晶圓分割成晶片；及擴展工程，其係將被分割成晶片的晶圓以面方向擴張而將晶片間隔擴寬，該元件之製造方法係實施：記憶工程，其係由該分割工程之後至該擴展工程之前，測定每個晶片的厚度，且將所測定出的晶片的位置資料、與晶片的厚度值產生關連地進行記憶，且包含： 拾取工程，其係在該擴展工程之後，根據在該記憶工程所記憶的晶片的厚度值、與該位置資料，選擇預先設定的容許厚度範圍內的晶片來進行拾取。 A method of manufacturing a device includes: a process of forming a modified layer, which is provided with a mark indicating a crystal orientation and is divided by a predetermined dividing line on the surface to form the inside of a wafer on which the device is formed. The predetermined line forms the modified layer; the grinding process is to grind the back side of the wafer; the dividing process is to grind the back side to cause the cracks starting from the modified layer to be generated toward the surface to divide the wafer Chips; and expansion process, which is to expand the wafer divided into chips in a plane direction to widen the chip interval. The manufacturing method of the device is implemented: memory engineering, which is from the division process to the expansion process Previously, the thickness of each wafer was measured, and the measured position data of the wafer was memorized in association with the thickness value of the wafer, and included: The picking process is based on the thickness value of the chip memorized in the memory process and the position data after the expansion process, selecting a chip within a predetermined allowable thickness range for picking. 一種研削裝置，其係具備有：保持手段，其係透過保護構件，保持具備表示結晶方位的標記且在表面以分割預定線被劃區而形成有元件的晶圓的表面；研削手段，其係研削晶圓的背面：厚度測定手段，其係以非接觸測定晶圓的厚度；及資料處理手段，其係處理該厚度測定手段所取得的資料的研削裝置，該保持手段係具備有：保持平台，其係使晶圓的背面為上而保持以保護構件予以保護的晶圓的表面；旋轉手段，其係以該保持平台的中心為軸而使該保持平台旋轉；及角度辨識部，其係辨識該旋轉手段所旋轉的該保持平台的旋轉角度，該厚度測定手段係具備有：厚度測定器，其係具備：由被保持在該保持平台的晶圓的上方將測定光投光的投光部、及接受該測定光在晶圓作反射的反射光的受光部，且由在以該受光部所受光的晶圓的背面作反射的反射光、與在晶圓的表面作反射的反射光的光路差，測定晶圓的厚度；移動手段，其係使該厚度測定器至少以晶圓的徑方向移動；及徑方向位置辨識部，其係辨識該厚度測定器的位置，該資料處理手段係具備有： 算出部，其係由在該厚度測定器所測定到的測定點中的該角度辨識部所辨識到的該保持平台的旋轉角度、與徑方向位置辨識部所辨識到的該厚度測定器的徑方向位置，算出以形成在晶圓的標記為基準之針對該測定點的晶圓的面方向的位置資料；及記憶部，其係將該算出部所算出的該各位置資料、與該厚度測定器所測定到的各測定點中的晶片的厚度值產生關連地進行記憶，可將在該記憶部產生關連所記憶的晶片的該位置資料與該厚度值，在分割工程後所使用的加工裝置進行收授。 A grinding device is provided with: holding means for holding through a protective member the surface of a wafer having a mark indicating crystal orientation and having elements formed on the surface divided by predetermined dividing lines; and a grinding means, which is Grinding the back side of the wafer: a thickness measuring means, which measures the thickness of the wafer in a non-contact manner; and a data processing means, which is a grinding device that processes the data obtained by the thickness measuring means, and the holding means is provided with: holding platform , Which is to make the back side of the wafer up and hold the surface of the wafer protected by a protective member; a rotating means that rotates the holding platform with the center of the holding platform as an axis; and an angle recognition part, which is Recognizing the angle of rotation of the holding platform rotated by the rotating means, the thickness measuring means is provided with: a thickness measuring device, which is provided with: projection of measuring light from above the wafer held on the holding platform Part, and a light-receiving part that receives the reflected light reflected by the measuring light on the wafer, and is composed of the reflected light reflected on the backside of the wafer received by the light-receiving part and the reflected light reflected on the surface of the wafer Measuring the thickness of the wafer; moving means, which moves the thickness measuring device at least in the radial direction of the wafer; and a radial position identification part which recognizes the position of the thickness measuring device, and the data processing means The department has: The calculation unit is based on the rotation angle of the holding platform recognized by the angle recognition unit at the measurement point measured by the thickness gauge and the diameter of the thickness gauge recognized by the radial position recognition unit Direction position, which calculates the position data of the surface direction of the wafer for the measurement point based on the mark formed on the wafer; and a memory section, which is the position data calculated by the calculation section and the thickness measurement The thickness value of the wafer in each measurement point measured by the device is memorized in a correlated manner, and the position data of the memorized wafer and the thickness value can be correlated in the memory part. The processing device used after the division process Conduct acceptance.
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