TWI709217B - 包含有機中介層的半導體封裝 - Google Patents
包含有機中介層的半導體封裝 Download PDFInfo
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- TWI709217B TWI709217B TW107110373A TW107110373A TWI709217B TW I709217 B TWI709217 B TW I709217B TW 107110373 A TW107110373 A TW 107110373A TW 107110373 A TW107110373 A TW 107110373A TW I709217 B TWI709217 B TW I709217B
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- semiconductor
- semiconductor chip
- organic interposer
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- semiconductor package
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Abstract
一種包括有機中介層的半導體封裝,包括:有機中介層,
包括絕緣層及形成於所述絕緣層上的配線層;加強體,設置於所述有機中介層上且具有貫穿孔;第一半導體晶片,設置於所述有機中介層上的所述有機貫穿孔中;第二半導體晶片,鄰近所述第一半導體晶片設置於所述有機中介層上的所述貫穿孔中;以及底部填充樹脂,填充所述貫穿孔的至少一些部分且固定所述第一半導體晶片及所述第二半導體晶片,其中所述第一半導體晶片的所述連接墊及所述第二半導體晶片的所述連接墊經由所述有機中介層的所述配線層電性連接至彼此。
Description
本揭露是有關於一種包括有機中介層的半導體封裝,彼此以並排方式設置的多個半導體晶片經由所述有機中介層而彼此電性連接。
本申請案主張於2017年10月19日在韓國智慧財產局提出申請的韓國專利申請案第10-2017-0135957號的優先權權利,所述韓國專利申請案的揭露內容全文以引用方式併入本案中。
根據對高頻寬記憶體(high bandwidth memory,HBM)的設定及使用的規格的改進,中介層市場已成長。目前,已將矽用作中介層的材料,但為了增大面積並減小成本,已進行了對玻璃或有機材料的開發。
同時,已藉由執行將晶粒貼合至中介層並對所述晶粒進行模塑的封裝製程而製造了中介層封裝。此處,當未執行模塑製程時,未進行2.5D封裝處理,使得中介層封裝可能未連接至球柵
陣列(ball grid array,BGA)基板等。因此,中介層封裝的剛性藉由模塑而得以保持。
然而,當執行模塑製程時,中介層封裝可發生翹曲,底部填充樹脂的可填充性可劣化,且晶粒與模塑材料之間可因中介層與晶粒的模塑材料的熱膨脹係數(coefficient of thermal expansion,CTE)之間的失配而發生破裂。
本揭露的態樣可提供一種包括有機中介層的半導體封裝,所述半導體封裝能夠在不執行模塑製程的情況下具有優異的剛性及散熱效果且具有優異的可靠性。
根據本揭露的態樣,可提供一種包括有機中介層的半導體封裝,其中具有特定形式的貫穿孔的加強體設置於所述有機中介層上,多個半導體晶片設置在所述貫穿孔中,且所述多個半導體晶片僅藉由底部填充製程而非模塑製程進行固定。
根據本揭露的態樣,一種包括有機中介層的半導體封裝可包括:有機中介層,包括絕緣層及形成於所述絕緣層上的配線層;加強體,設置於所述有機中介層上且具有貫穿孔;第一半導體晶片,設置於所述有機中介層上的所述貫穿孔中且具有主動面及與所述主動面相對的非主動面,在所述主動面上設置有連接墊;多個第二半導體晶片,鄰近所述第一半導體晶片設置於所述有機中介層上的所述貫穿孔中且分別具有主動面及與所述主動面
相對的非主動面,所述主動面上設置有連接墊;以及底部填充樹脂,填充所述貫穿孔的至少一些部分且固定所述第一半導體晶片及所述多個第二半導體晶片,其中所述第一半導體晶片的所述連接墊及所述多個第二半導體晶片的所述連接墊經由所述有機中介層的所述配線層電性連接至彼此,且所述加強體的至少一些部分設置於所述多個第二半導體晶片之間。
根據本揭露的另一態樣,一種包括有機中介層的半導體封裝可包括:加強體,具有貫穿孔;第一半導體晶片,設置於所述貫穿孔中且具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊;第二半導體晶片,鄰近所述第一半導體晶片設置於所述貫穿孔中且分別具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊;底部填充樹脂,填充所述貫穿孔的至少一些部分且固定所述第一半導體晶片及所述第二半導體晶片;以及有機中介層,設置於所述加強體、所述底部填充樹脂、所述第一半導體晶片的所述主動面及所述第二半導體晶片的所述主動面上,其中所述有機中介層包括配線層,所述配線層電性連接至所述第一半導體晶片的所述連接墊及所述第二半導體晶片的所述連接墊,所述第一半導體晶片的所述連接墊及所述第二半導體晶片的所述連接墊經由所述有機中介層的所述配線層電性連接至彼此,且所述底部填充樹脂的上表面相對於所述加強體的上表面、所述第一半導體晶片的所述非主動面及所述第二半導體晶片的所述非主動面具有台階。
100A、100B、1121:半導體封裝
110:中介層
111:絕緣層
112:配線層
112h:散熱圖案
112S:連接圖案
113:通孔
113h:散熱通孔
113S:連接通孔
120:加強體
120H:貫穿孔
120P1:突出部分
120P2:突出部分
125:黏合構件
131:第一半導體晶片
131B、132B、133B:低熔點金屬
131P、132P、133P:連接墊
132、133:第二半導體晶片
135:連接構件
140:底部填充樹脂
150:鈍化層
160:凸塊下金屬層
170:電性連接結構
180:散熱構件
1000:電子裝置
1010:主板
1020:晶片相關組件
1030:網路相關組件
1040:其他組件
1050:照相機
1060:天線
1070:顯示器裝置
1080:電池
1090:訊號線
1100:智慧型電話
1101:主體
1110:主板
1120:電子組件
1130:照相機
2110:主板
2210:球柵陣列(BGA)基板
2220:圖形處理單元(GPU)/晶片
2230:中介層
2240:高頻寬記憶體(HBM)/晶片
2250、2260:有機中介層
2310、2320:半導體封裝
I-I’、II-II’:線
藉由結合附圖閱讀以下詳細說明,將更清晰地理解本揭露的以上及其他態樣、特徵、及優點,在附圖中:圖1是說明電子裝置系統的實例的示意性方塊圖;圖2是說明電子裝置的實例的示意性立體圖;圖3是說明其中在電子裝置的主板上安裝3D球柵陣列(BGA)封裝的情形的示意性剖視圖;圖4是說明其中在主板上安裝2.5D有機中介層封裝的情形的示意性剖視圖;圖5是說明其中在主板上安裝2.5D有機中介層封裝的情形的示意性剖視圖;圖6是說明包括有機中介層的半導體封裝的實例的示意性剖視圖;圖7是沿圖6所示包括有機中介層的半導體封裝的線I-I’截取的示意性平面圖;圖8是說明包括有機中介層的半導體封裝的另一實例的示意性剖視圖;以及圖9是沿圖8所示包括有機中介層的半導體封裝的線II-II’截取的示意性平面圖。
在下文中,將參照附圖闡述本揭露中的各例示性實施例。在所述附圖中,為清晰起見,可誇大或風格化各組件的形狀、
尺寸等。
然而,本揭露可示例為諸多不同形式,且不應被視為僅限於本文中提出的具體實施例。確切而言,提供該些實施例是為了使此揭露內容將透徹及完整並將向熟習此項技術者充分傳達本揭露的範圍。
在本文中,下側、下部部分、下表面等用於指代相對於所述圖式的橫截面朝向扇出型半導體封裝的安裝表面的方向,而上側、上部部分、上表面等用於指代與所述方向相對的方向。然而,該些方向是出於解釋方便而進行界定的,且申請專利範圍並非特別受限於上述所界定的方向。
在說明中組件與另一組件的「連接(connection)」的意義包括經由黏合層的間接連接以及兩個組件之間的直接連接。另外,「電性連接(electrically connected)」概念上包括實體連接及實體分離。可理解,當以例如「第一(first)」及「第二(second)」等用語來指代元件時,所述元件並非由此受到限制。使用「第一」及「第二」等用語可能僅用於將所述元件與其他元件區分開的目的,且可不限制所述元件的順序或重要性。在某些情形中,在不背離本文中所提出的申請專利範圍的範圍的條件下,第一元件可被稱作第二元件。相似地,第二元件亦可被稱作第一元件。
本文中所使用的用語「例示性實施例」並不指代同一例示性實施例,而是為強調與另一例示性實施例的特定特徵或特性不同的特定特徵或特性而提供。然而,本文中所提供的例示性實
施例被視為能夠藉由彼此整體地或部分地組合而實施。舉例而言,即使並未在另一例示性實施例中闡述在特定例示性實施例中闡述的一個元件,亦可將所述元件理解為與另一例示性實施例相關的說明,除非在本文中提供了相反或相矛盾的說明。
使用本文中所使用的用語僅為了闡述例示性實施例而非限制本揭露。在此種情形中,除非在上下文中另有解釋,否則單數形式包括複數形式。
電子裝置
圖1是說明電子裝置系統的實例的示意性方塊圖。
參照圖1,電子裝置1000中可容置有主板1010。主板1010可包括實體連接至或電性連接至主板1010的晶片相關組件1020、網路相關組件1030、其他組件1040等。該些組件可連接至以下將闡述的其他組件,以形成各種訊號線1090。
晶片相關組件1020可包括:記憶體晶片,例如揮發性記憶體(例如,動態隨機存取記憶體(dynamic random access memory,DRAM))、非揮發性記憶體(例如,唯讀記憶體(read only memory,ROM))、快閃記憶體等;應用處理器晶片,例如中央處理器(例如,中央處理單元(central processing unit,CPU))、圖形處理器(例如,圖形處理單元(graphics processing unit,GPU))、數位訊號處理器、密碼處理器(cryptographic processor)、微處理器、微控制器等;及邏輯晶片,例如類比數位轉換器(analog-to-digital converter,ADC)、應用專用積體電路
(application-specific integrated circuit,ASIC)等。然而,晶片相關組件1020並非僅限於此,而是亦可包括其他類型的晶片相關組件。另外,晶片相關元件1020可彼此組合。
網路相關組件1030可包括例如以下協定:無線保真(wireless fidelity,Wi-Fi)(電氣及電子工程師學會(Institute of Electrical And Electronics Engineers,IEEE)802.11家族等)、全球互通微波存取(worldwide interoperability for microwave access,WiMAX)(IEEE 802.16家族等)、IEEE 802.20、長期演進(long term evolution,LTE)、僅支援資料的演進(evolution data only,Ev-DO)、高速封包存取+(high speed packet access +,HSPA+)、高速下行封包存取+(high speed downlink packet access +,HSDPA+)、高速上行封包存取+(high speed uplink packet access +,HSUPA+)、增強型資料GSM環境(enhanced data GSM environment,EDGE)、全球行動通訊系統(global system for mobile communications,GSM)、全球定位系統(global positioning system,GPS)、通用封包無線電服務(general packet radio service,GPRS)、分碼多重存取(code division multiple access,CDMA)、分時多重存取(time division multiple access,TDMA)、數位增強型無線電訊(digital enhanced cordless telecommunications,DECT)、藍芽、3G協定、4G協定及5G協定以及繼上述協定之後指定的任何其他無線協定及有線協定。然而,網路相關組件1030並非僅限於此,而是亦可包括多種其他無線標準或協定或者有線標準或協定。另外,網路
相關組件1030可與上述晶片相關組件1020一起彼此組合。
其他組件1040可包括高頻電感器、鐵氧體電感器(ferrite inductor)、功率電感器、鐵氧體珠粒、低溫共燒陶瓷(low temperature co-firing ceramic,LTCC)、電磁干擾(electromagnetic interference,EMI)濾波器、多層陶瓷電容器(multilayer ceramic capacitor,MLCC)等。然而,其他組件1040並非僅限於此,而是亦可包括用於各種其他目的的被動組件等。另外,其他組件1040可與上述晶片相關組件1020或網路相關組件1030一起相互組合。
端視電子裝置1000的類型,電子裝置1000可包括可實體地連接至或電性地連接至主板1010或可不實體地連接至或不電性地連接至主板1010的其他組件。該些其他組件可包括例如照相機1050、天線1060、顯示器裝置1070、電池1080、音訊編解碼器(圖中未示出)、視訊編解碼器(圖中未示出)、功率放大器(圖中未示出)、羅盤(圖中未示出)、加速度計(圖中未示出)、陀螺儀(圖中未示出)、揚聲器(圖中未示出)、大容量儲存單元(例如,硬碟驅動機)(圖中未示出)、光碟(compact disk,CD)驅動機(圖中未示出)、數位多功能光碟(digital versatile disk,DVD)驅動機(圖中未示出)等。然而,該些其他組件並非僅限於此,而是端視電子裝置1000的類型等亦可包括用於各種目的的其他組件。
電子裝置1000可為智慧型電話、個人數位助理(personal digital assistant,PDA)、數位攝影機、數位照相機(digital still
camera)、網路系統、電腦、監視器、平板個人電腦(personal computer,PC)、膝上型個人電腦、隨身型易網機個人電腦(netbook PC)、電視、視訊遊戲機(video game machine)、智慧型手錶、汽車組件等。然而,電子裝置1000並非僅限於此,且可為處理資料的任何其他電子裝置。
圖2是說明電子裝置的實例的示意性立體圖。
參照圖2,半導體封裝可出於各種目的而在如上所述的各種電子裝置1000中使用。舉例而言,主板1110可容置於智慧型電話1100的主體1101中,且各種組件1120可實體地連接至或電性地連接至主板1110。另外,可實體地連接至或電性地連接至主板1110或可不實體地連接至或不電性地連接至主板1110的其他組件(例如照相機1130)可容置於主體1101中。電子組件1120中的某些電子組件1120可為晶片相關組件,且半導體封裝1121可為例如晶片相關組件中的應用處理器,但並非僅限於此。所述電子裝置不必僅限於智慧型電話1100,而是可為如上所述的其他電子裝置。
包括有機中介層的半導體封裝
一般而言,在半導體晶片中整合有諸多精細的電路。然而,半導體晶片本身無法用作成品的半導體產品,且可因外部物理衝擊或化學衝擊而被損壞。因此,半導體晶片可能無法自身單獨使用,而是可被封裝於電子裝置等中且在電子裝置等中以封裝狀態使用。
此處,需要進行半導體封裝,乃因於電性連接方面,半導體晶片與電子裝置的主板之間可存在電路寬度差。詳言而言,半導體晶片的連接墊的尺寸及半導體晶片的各連接墊之間的間隔是非常精細的,但在電子裝置中使用的主板的組件安裝墊的尺寸及主板的各組件安裝墊之間的間隔顯著地大於半導體晶片的連接墊的尺寸及各連接墊之間的間隔。因此,可能難以將半導體晶片直接安裝於主板上,且可能需要用於緩衝半導體晶片與主板之間的電路寬度差的封裝技術。
以下將參照圖式更詳細地闡述藉由上述封裝技術製造的包括有機中介層的半導體封裝。
圖3是說明其中在電子裝置的主板上安裝3D球柵陣列(BGA)封裝的情形的示意性剖視圖。
半導體晶片中例如圖形處理單元(GPU)等應用專用積體電路(ASIC)是極為昂貴的,且因此在應用專用積體電路上以高良率執行封裝是極為重要的。為此,在安裝半導體晶片之前,製備可對數千至數十萬個連接墊進行重佈線的球柵陣列(BGA)基板2210等,並將例如圖形處理單元2220等昂貴的半導體晶片藉由表面安裝技術(surface mounting technology,SMT)等安裝並封裝於球柵陣列基板2210上且然後最終安裝於主板2110上。
同時,在圖形處理單元2220的情形中,需要顯著減小圖形處理單元2220與例如高頻寬記憶體(HBM)等記憶體之間的訊號路徑。為此,使用以下產品,在所述產品中:將例如高頻寬
記憶體2240等半導體晶片安裝然後封裝於中介層2230中,然後以疊層封裝(package-on-package,POP)形式將所述半導體晶片堆疊在其中安裝有圖形處理單元2220的封裝上。然而,在此種情形中,裝置的厚度被過分增大,且在顯著減小訊號路徑方面存在限制。
圖4是說明其中在主板上安裝2.5D有機中介層封裝的情形的示意性剖視圖。
作為用於解決上述問題的方法,可考量藉由包括以下的2.5D中介層技術來製造包括有機中介層的半導體封裝2310:進行表面安裝,然後將第一半導體晶片(例如,圖形處理單元2220)及第二半導體晶片(例如,高頻寬記憶體2240)以彼此並排的方式封裝於有機中介層2250上。在此種情形中,具有數千至數十萬個連接墊的圖形處理單元2220及高頻寬記憶體2240可被有機中介層2250重佈線,且可經由最短的路徑而彼此電性連接。此外,當包括有機中介層的半導體封裝2310被再次安裝於球柵陣列基板2210等上並進行重佈線時,半導體封裝2310可被最終安裝於主板2110上。然而,在有機中介層2250中形成矽貫穿孔(through-silicon via,TSV)是極為困難的,且製造有機中介層2250所需的成本顯著為高,並且有機中介層2250因此在增大面積及減小成本方面受到限制。
圖5是說明其中在主板上安裝2.5D有機中介層封裝的情形的示意性剖視圖。
作為解決上述問題的方法,可考量使用有機中介層2260來代替有機中介層2250。舉例而言,可考量藉由包括以下的2.5D中介層技術來製造包括有機中介層的半導體封裝2320:進行表面安裝,然後將第一半導體晶片(例如,圖形處理單元2220)及第二半導體晶片(例如,高頻寬記憶體2240)以彼此並排的方式封裝於有機中介層2260上。在此種情形中,具有數千至數十萬個連接墊的圖形處理單元2220及高頻寬記憶體2240可被有機中介層2260重佈線,且可經由最短的路徑而彼此電性連接。此外,當包括有機中介層的半導體封裝2320被再次安裝於球柵陣列基板2210等上並進行重佈線時,半導體封裝2320可被最終安裝於主板2110上。此外,所述有機中介層在增大面積且減小成本方面可為有利的。
同時,包括有機中介層的半導體封裝2320藉由執行以下封裝製程而被製造而成:將晶片2220及2240安裝於有機中介層2260上,然後對所述晶片進行模塑。原因在於:當未執行模塑製程時,未進行封裝處理,使得封裝可能未連接至球柵陣列基板2210等。因此,封裝的剛性藉由模塑得以保持。然而,如上所述,當執行模塑製程時,封裝可發生翹曲,底部填充樹脂的可填充性可劣化,且晶粒與模塑材料之間可因中介層2260與晶片2220及2240的模塑材料的熱膨脹係數(CTE)之間的失配而發生破裂。
圖6是說明包括有機中介層的半導體封裝的實例的示意性剖視圖。
圖7是沿圖6所示包括有機中介層的半導體封裝的線I-I’截取的示意性平面圖。
參照圖6及圖7,在本揭露中根據例示性實施例包括有機中介層的半導體封裝100A可包括:中介層110,包括絕緣層111及形成於絕緣層111上且位於絕緣層111中的配線層112及通孔113;加強體120,設置於中介層110上且具有貫穿孔120H;第一半導體晶片131,設置於中介層110上的貫穿孔120H中且具有主動面及與所述主動面相對的非主動面,在所述主動面上設置有連接墊131P;多個第二半導體晶片132及133,與第一半導體晶片131並排地設置於中介層110上的貫穿孔120H中且分別具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊132P及133P;以及底部填充樹脂140,填充貫穿孔120H的至少一些部分且固定第一半導體晶片131及所述多個第二半導體晶片132及133。若有必要,則包括有機中介層的半導體封裝100A可更包括:鈍化層150,設置於中介層110的與鄰近第一半導體晶片131的表面相對的表面上;凸塊下金屬層160,形成於鈍化層150的開口中並電性連接至中介層110的配線層112;以及電性連接結構170,設置於凸塊下金屬層160上且經由凸塊下金屬層160電性連接至中介層110的配線層112。
第一半導體晶片131及所述多個第二半導體晶片132及133的連接墊131P、132P及133P可經由中介層110的配線層112電性連接至彼此,且加強體120的至少一些部分(即,突出部分
120P1及120P2)可設置於所述多個第二半導體晶片132及133之間。舉例而言,所述多個第二半導體晶片132及133可分別在第一半導體晶片131的一側及另一側處與第一半導體晶片131並排地設置,加強體120的第一突出部分120P1及第二突出部分120P2可分別設置於所述多個第二半導體晶片132之間及所述多個第二半導體晶片133之間,其中多個第二半導體晶片132及所述多個第二半導體晶片133分別設置於第一半導體晶片131的一側及另一側處。在此種情形中,底部填充樹脂140的上表面可相對於加強體120的上表面、第一半導體晶片131的非主動面及所述多個第二半導體晶片132及133的非主動面具有台階。亦即,底部填充樹脂140的上表面可設置在低於加強體120的上表面、第一半導體晶片131的非主動面及所述多個第二半導體晶片132及133的非主動面的水平高度上。根據例示性實施例包括有機中介層的半導體封裝100A在不執行模塑製程的情況下被製造而成。在此種情形中,加強體120的貫穿孔120H的壁的至少一些部分、第一半導體晶片131的側表面的至少一些部分及所述多個第二半導體晶片132及133中的每一者的側表面的至少一些部分可暴露在外。
在根據例示性實施例具有此種結構的包括有機中介層的半導體封裝100A中,加強體120可設置在中介層110上,且特別而言甚至在其中設置有多個半導體晶片131、132及133的情形中,加強體120的突出部分120P1及120P2設置在半導體晶片131、132及133之間,且貫穿孔120H的中空空間因此幾乎消失,
使得包括有機中介層的半導體封裝100A的剛性可在不執行模塑製程的情況下被極優異地保持。因此,包括有機中介層的半導體封裝100A的翹曲可被極有效地控制。此外,由於在填充底部填充樹脂140時,加強體120用作擋壩(dam),因此加強體120可防止在半導體晶片131、132及133之間產生底部填充空隙,且可防止底部填充樹脂140向外流出。此外,由於未使用模塑製程,因此可抑制底部填充缺陷以提高包括有機中介層的半導體封裝100A的可靠性。此外,包括有機中介層的半導體封裝100A的散熱效果可因被暴露出的半導體晶片131、132及133以及加強體120而為優異的。另外,半導體晶片131、132及133以及加強體120可被形成於同一水平高度上,使得散熱構件180可輕易地貼合至半導體晶片131、132及133以及加強體120。因此,可更有效地散熱。
以下將更詳細地闡述根據例示性實施例包括有機中介層的半導體封裝100A中所包括的各組件。
中介層110可對半導體晶片131、132及133的連接墊131P、132P及133P進行重佈線。半導體晶片131、132及133的具有各種功能的數千至數十萬個連接墊131P、132P及133P可被中介層110重佈線,且可端視功能而經由電性連接結構170在外部實體地或電性地連接。此外,半導體晶片131、132及133的連接墊131P、132P及133P可藉由中介層110經由最短的路徑而彼此電性連接。中介層110可包括絕緣層111、形成在絕緣層111上或絕緣層111中的配線層112、以及穿透絕緣層111並將形成於不
同層上的配線層112彼此電性連接的通孔113。中介層110的層的數目可大於圖中所示數目或小於圖中所示數目。具有此種形式的中介層110可被用作2.5D型有機中介層。
絕緣層111可用作中介層110的介電層。舉例而言,可使用絕緣材料作為絕緣層111中的每一者的材料。在此種情形中,可使用以下材料作為所述絕緣材料:熱固性樹脂,例如環氧樹脂;熱塑性樹脂,例如聚醯亞胺樹脂;其中將熱固性樹脂及熱塑性樹脂與無機填料混合的樹脂,例如味之素構成膜(Ajinomoto build-up film,ABF)等。作為另外一種選擇,亦可使用其中將熱固性樹脂或熱塑性樹脂與無機填料一起浸入於例如玻璃纖維(或玻璃布或玻璃織物)等核心材料中的樹脂(例如,預浸體(prepreg)等)作為所述絕緣材料。作為另外一種選擇,可使用例如感光成像介電(photoimagable dielectric,PID)樹脂等感光性絕緣材料作為所述絕緣材料。當絕緣層111為多個層時,絕緣層111的材料可視需要彼此相同,且亦可彼此不同。當絕緣層111為多個層時,絕緣層111可端視製程而彼此整合,進而使得各絕緣層之間的邊界亦可不明顯。
配線層112可用以實質上對連接墊131P、132P及133P進行重佈線並端視訊號、功率等使連接墊131P、132P及133P連接至彼此。亦即,連接墊131P、132P及133P可經由配線層112的連接圖案112s及連接通孔113s而電性連接至彼此。視需要,配線層112可包括散熱圖案112h及將各半導體晶片131、132及133
連接至加強體120的散熱通孔113h。在此種情形中,自半導體晶片131、132及133產生的熱可經由加強體120散失,且因此可實施更有效的散熱。
配線層112中的每一者的材料可為例如銅(Cu)、鋁(Al)、銀(Ag)、錫(Sn)、金(Au)、鎳(Ni)、鉛(Pb)、鈦(Ti)或其合金等導電材料。配線層112可端視其對應層的設計而執行各種功能。舉例而言,配線層112可包括接地(GND)圖案、電源(PWR)圖案、訊號(S)圖案等。此處,訊號(S)圖案可包括除接地(GND)圖案、電源(PWR)圖案等之外的各種訊號,例如資料訊號等。另外,配線層112可包括通孔接墊、電性連接結構接墊等。可在圖案的表面上形成表面處理層P,用作用於將半導體晶片131、132及133安裝於配線層112中的接墊。對表面處理層P並無特別限制,只要表面處理層P是相關技術中已知的即可,但表面處理層P可藉由例如電解鍍金、無電鍍金、有機保焊劑(organic solderability preservative,OSP)或無電鍍錫、無電鍍銀、無電鍍鎳/置換鍍金、直接浸金(direct immersion gold,DIG)鍍覆、熱空氣焊料均塗(hot air solder leveling,HASL)等形成,但並非僅限於此。
通孔113可將形成於不同層上的配線層112電性連接至彼此,從而在包括有機中介層的半導體封裝100A中形成電性路徑。通孔113中的每一者的材料可為例如銅(Cu)、鋁(Al)、銀(Ag)、錫(Sn)、金(Au)、鎳(Ni)、鉛(Pb)、鈦(Ti)或其
合金等導電材料。通孔113可被導電材料完全填充,但並非僅限於此。通孔113中的每一者的剖面形狀在圖式中可為近似倒置的梯形形狀,但並非僅限於此。
加強體120可進一步改善包括有機中介層的半導體封裝100A的剛性。加強體120可具有貫穿孔120H。第一半導體晶片131及所述多個第二半導體晶片132及133可在貫穿孔120H中鄰近彼此設置,以自加強體120間隔開預定距離。半導體晶片131、132及133的側表面可被加強體120環繞。所述多個第二半導體晶片132及133可在貫穿孔120H中分別設置於第一半導體晶片131的一側及另一側處,且加強體120的第一突出部分120P1及第二突出部分120P2可分別設置在所述多個第二半導體晶片132之間以及所述多個第二半導體晶片133之間,以使貫穿孔120H的空間狹窄。在此種情形中,包括有機中介層的半導體封裝100A的剛性可被進一步改善,且半導體晶片131、132及133即使藉由極少量的底部填充樹脂140亦可被穩定地固定。加強體120可經由適當的黏合構件125(例如,環氧樹脂)而被貼合至中介層110。
加強體120的材料可為金屬系材料或陶瓷系材料。在此種情形中,包括有機中介層的半導體封裝100A的剛性可得以優異地保持,且熱膨脹係數的差可顯著減小以有效地控制包括有機中介層的半導體封裝100A的翹曲。此外,由於所述金屬系材料或陶瓷系材料具有較通用模塑樹脂、絕緣樹脂等更佳的導熱率,因此散熱特性亦可得到改善。此外,可執行蝕刻製程而非雷射鑽孔製
程來作為用於形成貫穿孔120H的製程,且因此可避免由異物導致的缺陷。除例如銅(Cu)、鋁(Al)等通用金屬以外,金屬系材料可為具有優異剛性及導熱率的合金。在此種情形中,所述合金可為例如Fe-Ni系合金(恆範鋼)等含有至少鐵的合金,但並非僅限於此。此外,在其中使用例如氧化鋯系(ZrO2)材料、氧化鋁系(Al2O3)材料、碳化矽系(SiC)材料及氮化矽系(Si3N4)材料等陶瓷系材料代替所述合金的情形中,亦可達成類似的效果。視需要,可使用絕緣材料作為加強體120的材料。舉例而言,可使用以下材料作為加強體120的材料:熱固性樹脂,例如環氧樹脂;熱塑性樹脂,例如聚醯亞胺樹脂;其中將熱固性樹脂及熱塑性樹脂與無機填料一起浸入於例如玻璃纖維等核心材料中的樹脂(例如,預浸體等)。
半導體晶片131、132及133中的每一者可為被設置成將數量為數百至數百萬個的元件或更多元件整合於單個晶片中的積體電路(IC)。在此種情形中,每一半導體晶片的主體的基材(base material)可為矽(Si)、鍺(Ge)、砷化鎵(GaAs)等。在所述主體中的每一者上可形成各種電路。半導體晶片131、132及133的連接墊131P、132P及133P可將半導體晶片131、132及133電性連接至其他組件。連接墊131P、132P及133P中的每一者的材料可為例如鋁(Al)等導電材料。在所述主體中的每一者上可形成暴露出連接墊131P、132P及133P的鈍化層,且所述鈍化層可為氧化物膜、氮化物膜等或者氧化物層與氮化物層構成的雙層。亦
可在需要的位置中進一步設置絕緣層等。可視需要在半導體晶片131、132及133的主動面上進一步形成重佈線層,且低熔點金屬131B、132B及133B等亦可分別連接至連接墊131P、132P及133P。低熔點金屬131B、132B及133B可為熔點低於連接墊131P、132P及133P的熔點的金屬,例如焊料或包含焊料的合金。半導體晶片131、132及133可經由連接墊131P、132P及133P及/或低熔點金屬131B、132B及133B而連接至中介層110的上部部分的被暴露出的配線層112,且可使用例如焊料等連接構件135進行所述連接。各半導體晶片131、132及133可藉由適當的底部填充樹脂140而被固定至中介層110。
第一半導體晶片131可為例如圖形處理單元等應用專用積體電路。所述多個第二半導體晶片132及133中的每一者可為例如高頻寬記憶體等記憶體。亦即,半導體晶片131、132及133中的每一者可為具有數十萬個或更多個輸入/輸出(I/O)的昂貴晶片,但並非僅限於此。舉例而言,例如高頻寬記憶體等第一及第二記憶體132可與例如圖形處理單元等應用專用積體電路131並排地設置在應用專用積體電路131的一側,且例如高頻寬記憶體等第三及第四記憶體133可與例如圖形處理單元等應用專用積體電路131並排地設置在應用專用積體電路131的另一側。第一突出部分120P1可設置在第一記憶體132與第二記憶體132之間,且第二突出部分120P2可設置在第三記憶體133與第四記憶體133之間。
底部填充樹脂140可將半導體晶片131、132及133固定至中介層110。可使用包括環氧樹脂等的適當材料作為底部填充樹脂140的材料。在根據例示性實施例包括有機中介層的半導體封裝100A中,在引入具有突出部分120P1及120P2的加強體120之後,將半導體晶片131、132及133設置在加強體120的貫穿孔120H中。因此,半導體晶片131、132及133可僅藉由少量的底部填充樹脂140進行固定,且可省略模塑或包封製程。底部填充樹脂140的上表面可相對於加強體120的上表面、第一半導體晶片131的非主動面及第二半導體晶片132及133的非主動面具有台階。亦即,底部填充樹脂140可僅填充貫穿孔120H的空間的一些部分。因此,加強體120的側表面的至少一些部分、第一半導體晶片131的側表面的至少一些部分及第二半導體晶片132及133的側表面的至少一些部分可暴露在外。
鈍化層150可保護中介層110不受外部物理損壞或化學損壞。對鈍化層150的材料無特別限制。舉例而言,可使用絕緣材料作為鈍化層150的材料。在此種情形中,絕緣材料可為以上被闡述作為中介層110的絕緣層111的絕緣材料的材料,例如ABF。
凸塊下金屬層160可改善電性連接結構170的連接可靠性,以改善包括有機中介層的半導體封裝100A的可靠性。凸塊下金屬層160可形成在鈍化層150的開口中,且可電性連接至中介層110的配線層112。凸塊下金屬層160可藉由適當的金屬化方法
形成。亦即,凸塊下金屬層160可包括例如銅(Cu)等適當的金屬。
電性連接結構170可在外部實體地或電性地連接包括有機中介層的半導體封裝100A。舉例而言,包括有機中介層的半導體封裝100A可經由電性連接結構170而被安裝於球柵陣列基板等上。電性連接結構170中的每一者可由例如焊料等導電材料形成。然而,此僅為實例,且電性連接結構170中的每一者的材料並非僅限於此。電性連接結構170中的每一者可為接腳(land)、球、引腳等。電性連接結構170可被形成為多層式結構或單層式結構。當電性連接結構170被形成為多層式結構時,電性連接結構170可包含銅(Cu)柱及焊料。當電性連接結構170被形成為單層結構時,電性連接結構170可包含錫-銀焊料或銅(Cu)。然而,此僅為實例,且電性連接結構170並非僅限於此。
對電性連接結構170的數目、間隔、安置形式等並無特別限制,而是可由熟習此項技術者端視設計細節而作出充分修改。舉例而言,根據連接墊131P、132P及133P的數目,電性連接結構170可被設置成數千至數十萬的數量,抑或可被設置成數千至數十萬或更多的數量或者數千至數十萬或更少的數量。
散熱構件180可為任意適當的散熱片。為了有效地散熱,散熱構件180可由金屬形成,但並非僅限於此。加強體120的上表面以及各半導體晶片131、132及133的非主動面可設置在同一水平高度上,且散熱構件180可因此被輕易地貼合至加強體
120的上表面以及各半導體晶片131、132及133的非主動面。片語「同一水平高度」指水平高度實質上彼此相同,且忽略細小的誤差。當設置散熱構件180時,散熱構件180與底部填充樹脂140之間的空間可為中空空間。散熱構件180可經由適當的黏合構件(例如,環氧樹脂)而貼合至加強體120,但並非僅限於此。
圖8是說明包括有機中介層的半導體封裝的另一實例的示意性剖視圖。
圖9是沿圖8所示包括有機中介層的半導體封裝的線II-II’截取的示意性平面圖。
參照圖8及圖9,在本揭露中根據另一例示性實施例包括有機中介層的半導體封裝100B中,多個第二半導體晶片132可與第一半導體晶片132並排地僅設置在第一半導體晶片131的一側處。亦即,第二半導體晶片132的數目及安置形式可端視設計而改變。然而,在此種情形中,亦可在所述多個第二半導體晶片132之間設置加強體120的突出部分120P1。其他內容與上述內容重複,且因此不再對其予以贅述。
如上所述,根據本揭露中的例示性實施例,可提供一種包括有機中介層的半導體封裝,所述半導體封裝能夠在不執行模塑製程的情況下具有優異的剛性及散熱效果且具有優異的可靠性。
儘管以上已示出並闡述了各例示性實施例,然而對於熟習此項技術者而言將顯而易見,在不背離由隨附申請專利範圍所
界定的本發明的範圍的條件下,可作出修改及變型。
100A:半導體封裝
110:中介層
111:絕緣層
112:配線層
113:通孔
120:加強體
120H:貫穿孔
125:黏合構件
131:第一半導體晶片
131B、132B、133B:低熔點金屬
131P、132P、133P:連接墊
132、133:第二半導體晶片
135:連接構件
140:底部填充樹脂
150:鈍化層
160:凸塊下金屬層
170:電性連接結構
180:散熱構件
I-I’:線
Claims (17)
- 一種半導體封裝,包括:有機中介層,包括絕緣層及形成於所述絕緣層上的配線層;加強體,設置於所述有機中介層上且具有貫穿孔;第一半導體晶片,設置於所述有機中介層上的所述貫穿孔中且具有主動面及與所述主動面相對的非主動面,在所述主動面上設置有連接墊;多個第二半導體晶片,鄰近所述第一半導體晶片設置於所述有機中介層上的所述貫穿孔中,所述多個第二半導體晶片具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊;以及底部填充樹脂,填充所述貫穿孔的至少一些部分且固定所述第一半導體晶片及所述多個第二半導體晶片,其中所述第一半導體晶片的所述連接墊及所述多個第二半導體晶片的所述連接墊經由所述有機中介層的所述配線層電性連接至彼此,且所述加強體的至少一些部分設置於所述多個第二半導體晶片之間。
- 如申請專利範圍第1項所述的半導體封裝,其中所述多個第二半導體晶片在所述第一半導體晶片的兩側上鄰近所述第一半導體晶片設置,且所述加強體的第一突出部分及第二突出部分分別設置於所述 多個第二半導體晶片之間與所述多個第二半導體晶片之間,其中所述多個第二半導體晶片以及所述多個第二半導體晶片分別設置於所述第一半導體晶片的一側及另一側處。
- 如申請專利範圍第1項所述的半導體封裝,其中所述底部填充樹脂的上表面相對於所述加強體的上表面、所述第一半導體晶片的所述非主動面及所述多個第二半導體晶片的所述非主動面具有台階。
- 如申請專利範圍第3項所述的半導體封裝,其中所述加強體的所述貫穿孔的壁的至少一些部分、所述第一半導體晶片的側表面的至少一些部分及所述多個第二半導體晶片的側表面的至少一些部分暴露在外。
- 如申請專利範圍第1項所述的半導體封裝,更包括設置於所述加強體、所述第一半導體晶片的所述非主動面及所述多個第二半導體晶片的所述非主動面上的散熱構件。
- 如申請專利範圍第5項所述的半導體封裝,其中在所述散熱構件與所述底部填充樹脂之間存在中空空間。
- 如申請專利範圍第5項所述的半導體封裝,其中所述加強體的上表面、所述第一半導體晶片的所述非主動面及所述多個第二半導體晶片的所述非主動面設置於同一水平高度上,且所述散熱構件貼合至所述加強體的所述上表面、所述第一半導體晶片的所述非主動面及所述多個第二半導體晶片的所述非主動面。
- 如申請專利範圍第1項所述的半導體封裝,其中所述有機中介層包括散熱圖案及將所述第一半導體晶片及所述多個第二半導體晶片連接至所述加強體的散熱通孔。
- 如申請專利範圍第1項所述的半導體封裝,其中所述第一半導體晶片的所述連接墊及所述多個第二半導體晶片的所述連接墊經由低熔點金屬連接至所述有機中介層的所述配線層。
- 如申請專利範圍第1項所述的半導體封裝,其中所述第一半導體晶片包括應用專用積體電路(ASIC),且所述多個第二半導體晶片包括記憶體。
- 如申請專利範圍第10項所述的半導體封裝,其中所述多個第二半導體晶片包括第一記憶體及第二記憶體,且其中所述第一記憶體及所述第二記憶體在所述應用專用積體電路的第一側處鄰近所述應用專用積體電路設置,且所述加強體的第一突出部分設置於所述第一記憶體與所述第二記憶體之間。
- 如申請專利範圍第11項所述的半導體封裝,其中所述多個第二半導體晶片更包括第三記憶體及第四記憶體,所述第三記憶體及所述第四記憶體在所述應用專用積體電路的第二側處鄰近所述應用專用積體電路設置,且所述加強體的第二突出部分設置於所述第三記憶體與所述第四記憶體之間。
- 如申請專利範圍第1項所述的半導體封裝,其中所述 第一半導體晶片包括圖形處理單元(GPU),且所述多個第二半導體晶片包括多個高頻寬記憶體(HBM)。
- 如申請專利範圍第1項所述的半導體封裝,其中所述加強體藉由黏合構件貼合至所述有機中介層。
- 一種半導體封裝,包括:加強體,具有貫穿孔;第一半導體晶片,設置於所述貫穿孔中且具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊;第二半導體晶片,鄰近所述第一半導體晶片設置於所述貫穿孔中且分別具有主動面及與所述主動面相對的非主動面,所述主動面上設置有連接墊;底部填充樹脂,填充所述貫穿孔的至少一些部分且固定所述第一半導體晶片及所述第二半導體晶片;以及有機中介層,設置於所述加強體、所述底部填充樹脂、所述第一半導體晶片的所述主動面及所述第二半導體晶片的所述主動面上,其中所述有機中介層包括配線層,所述配線層電性連接至所述第一半導體晶片的所述連接墊及所述第二半導體晶片的所述連接墊,所述第一半導體晶片的所述連接墊及所述第二半導體晶片的所述連接墊經由所述有機中介層的所述配線層電性連接至彼此,且 所述底部填充樹脂的上表面相對於所述加強體的上表面、所述第一半導體晶片的所述非主動面及所述第二半導體晶片的所述非主動面具有台階。
- 如申請專利範圍第15項所述的半導體封裝,其中所述加強體的所述貫穿孔的壁的至少一些部分、所述第一半導體晶片的側表面的至少一些部分及所述第二半導體晶片的側表面的至少一些部分暴露在外。
- 如申請專利範圍第15項所述的半導體封裝,其中所述有機中介層更包括熱傳導構件,所述熱傳導構件將所述第一半導體晶片及所述第二半導體晶片熱連接至彼此及熱連接至所述加強體。
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KR102586072B1 (ko) * | 2019-05-21 | 2023-10-05 | 삼성전기주식회사 | 반도체 패키지 및 이를 포함하는 안테나 모듈 |
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TWI759698B (zh) * | 2020-03-04 | 2022-04-01 | 矽品精密工業股份有限公司 | 電子封裝件及其承載結構 |
US11444068B2 (en) * | 2020-07-14 | 2022-09-13 | Qualcomm Incorporated | Three-dimensional (3D) integrated circuit device having a backside power delivery network |
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US11824032B2 (en) * | 2021-03-18 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company Limited | Die corner removal for underfill crack suppression in semiconductor die packaging |
KR20220131635A (ko) * | 2021-03-22 | 2022-09-29 | 삼성전자주식회사 | 반도체 패키지 |
KR20220164946A (ko) | 2021-06-07 | 2022-12-14 | 삼성전자주식회사 | 반도체 패키지 |
US20230035627A1 (en) * | 2021-07-27 | 2023-02-02 | Qualcomm Incorporated | Split die integrated circuit (ic) packages employing die-to-die (d2d) connections in die-substrate standoff cavity, and related fabrication methods |
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