TWI708305B - Improved method of mass sampling test for wafer process yield analysis - Google Patents
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Abstract
一種晶圓製程良率分析之大量取樣測試的改良方法,係藉由在半導體晶圓上設置可定址待測元件陣列,並且在探針卡上設置定址訊號電路,再使用自動測試機依循適當的操作程序,輸出控制訊號來控制定址訊號電路產生多位元並行定址訊號,進而藉此操控半導體晶圓上的可定址待測元件陣列以切換選取其中的待測元件,然後使用自動測試機進行待測元件的測試,只要重覆此等切換選取與測試元件的步驟,即可完成大量取樣測試。本發明能夠協助運用自動測試機的有限資源,進行更有效率的測試,以降低大量取樣測試的時間成本與設備成本。 An improved method for mass sampling testing of wafer process yield analysis is to set up an addressable device array to be tested on a semiconductor wafer, and set up an addressing signal circuit on a probe card, and then use an automatic test machine to follow appropriate Operation program, output control signal to control the address signal circuit to generate multi-bit parallel address signal, and then manipulate the addressable DUT array on the semiconductor wafer to switch and select the DUT, and then use the automatic test machine to wait For the test of the test component, a large number of sampling tests can be completed by repeating these steps of switching and selecting and testing components. The invention can assist in using the limited resources of the automatic testing machine to perform more efficient testing, so as to reduce the time cost and equipment cost of a large number of sampling tests.
Description
本發明為一種晶圓製程良率分析之大量取樣測試的改良方法,透過在探針卡上設置定址訊號電路,即可協助運用自動測試機的有限資源,更有效率的進行可定址待測元件陣列的測試,以降低大量取樣測試的時間成本與設備成本。 The present invention is an improved method for mass sampling test of wafer process yield analysis. By setting address signal circuit on the probe card, it can assist in using the limited resources of automatic tester to more efficiently perform addressable components under test Array testing to reduce the time cost and equipment cost of a large number of sampling tests.
由於半導體產業技術持續不斷進步,晶片電路中的電晶體與導線數量也越來越多,因此在半導體產業的晶圓電性參數測試領域,尤其是晶圓製程良率統計分析這個領域,為了對晶圓製程良率進行更有實質意義的統計分析,就必須取得更大量的測試資料,於是產業界在過去多年來,發展出一些方法來支援這方面的技術需求,例如:在半導體晶圓上設置「可定址待測元件陣列」這類型的測試電路,以便於能夠運用數量有限的測試探針接腳來測試更多待測元件,並且藉此方式提升測試效率,以避免大量取樣測試造成測試產能的沉重負擔。 As the semiconductor industry technology continues to advance, the number of transistors and wires in the chip circuit is also increasing. Therefore, in the field of wafer electrical parameter testing in the semiconductor industry, especially the statistical analysis of wafer process yield, in order to For a more substantial statistical analysis of wafer process yield, it is necessary to obtain a larger amount of test data. Therefore, the industry has developed some methods to support this technical demand over the past years, for example: on semiconductor wafers Set up a test circuit of the "addressable device under test array" so that a limited number of test probe pins can be used to test more devices under test, and in this way, the test efficiency can be improved to avoid testing caused by a large number of sampling tests A heavy burden on production capacity.
習知技術若要運用自動測試機的有限硬體資源來進行晶圓製程良率統計分析的大量取樣測試,一種典型方法是把「待測元件陣列」與「定址邏輯」之相關電路全部直接整合設置在晶圓上,並且經常會採用「序向邏輯電路」的設計來因應數量有限的探針接腳。這樣的方案在工程技術面雖然可行,但是以實務面而言卻有很大的矛盾點。因為在新世代半 導體製程技術開發的過程中,新製程技術處於不太成熟穩定的狀態,如果將所有定址相關的邏輯電路全部設置在晶圓上,就可能導致定址相關電路對於半導體製程的變異性十分敏感而不太穩定,這樣就容易衍生許多測試問題,即使取得大量測試數據也難以進行可信賴的製程良率統計分析。 If the conventional technology wants to use the limited hardware resources of the automatic test machine to perform a large number of sampling tests for the statistical analysis of the wafer process yield, a typical method is to directly integrate all the related circuits of the "device under test" and the "address logic" Set on the wafer, and often use the "sequential logic circuit" design to cope with the limited number of probe pins. Although such a scheme is feasible in terms of engineering technology, it has great contradictions in practical terms. Because in the new generation and a half During the development of the conductor process technology, the new process technology is in an immature and stable state. If all address-related logic circuits are installed on the wafer, the address-related circuits may be very sensitive to the variability of the semiconductor process. Too stable, so it is easy to derive many test problems, even if a large amount of test data is obtained, it is difficult to perform reliable statistical analysis of the process yield.
為了解決上述問題,習知技術通常會採取兩種典型方案,其一是在半導體晶圓上的定址電路或測待元件陣列之中,增設一些檢查機制來進行定址電路的偵錯,主動察覺並且濾除可能出現的錯誤資料。其二是儘量簡化可定址待測元件陣列的設計方式,尤其是考慮避免使用「序向邏輯電路」;儘量只用相對較單純的「組合邏輯電路」,例如:「解碼器電路」或「解多工器電路」,以減少定址電路之異常狀態的發生機率。 In order to solve the above-mentioned problems, the conventional technology usually adopts two typical solutions. One is to add some inspection mechanisms to the address circuit on the semiconductor wafer or the array of components under test to perform the error detection of the address circuit, actively detect and Filter out possible wrong data. The second is to try to simplify the design of the addressable device under test array, especially to avoid using "sequential logic circuits"; try to use relatively simple "combination logic circuits", such as "decoder circuits" or "solutions". Multiplexer circuit" to reduce the probability of occurrence of abnormal state of the addressing circuit.
然而,若不採用「序向邏輯電路」,單純用「組合邏輯電路」來設計半導體晶圓上的待測元件陣列之定址電路,這會需要在晶圓上耗用很多探針接腳來實現比較大型的待測元件陣列的定址功能,於是導致兩項缺點,其一在於探針接腳相當消耗晶圓上的可用面積;其二在於這會提高自動測試機的硬體資源需求門檻,因而造成自動測試設備的成本增加。 However, if the "sequential logic circuit" is not used, and the "combinational logic circuit" is used to design the addressing circuit of the DUT array on the semiconductor wafer, it will require a lot of probe pins on the wafer to achieve comparison. The addressing function of the large array of devices under test causes two shortcomings. One is that the probe pins consume a lot of available area on the wafer; the other is that it will increase the threshold of hardware resource requirements for automatic testers, thus causing automatic The cost of test equipment increases.
因此發明人經過積極思考,原型試驗及不斷改善,終於研發出簡易又實用的改良方案,尤其可以解決上述所提及的第二項缺點。 Therefore, after active thinking, prototype testing and continuous improvement, the inventor finally developed a simple and practical improvement plan, especially to solve the second shortcoming mentioned above.
本發明揭露一種晶圓製程良率分析之大量取樣測試的改良方法,包括: The present invention discloses an improved method for mass sampling test of wafer process yield analysis, including:
a.設置至少一可定址待測元件陣列在一半導體晶圓上,該可定址待測元件陣列具有複數定址訊號輸入端; a. At least one array of addressable devices to be tested is arranged on a semiconductor wafer, and the array of addressable devices to be tested has multiple addressing signal input terminals;
b.設置至少一定址訊號電路在一探針卡上,該定址訊號電路具有複數輸入端,用以接收一自動測試機所輸出的電源與控制訊號,該定址訊號電路具有複數定址訊號輸出端,用以輸出一多位元並行定址訊號; b. Set up at least a certain address signal circuit on a probe card. The address signal circuit has multiple input terminals for receiving power and control signals output by an automatic tester. The address signal circuit has multiple address signal output terminals. Used to output a multi-bit parallel address signal;
c.該自動測試機執行測試任務期間,藉由該探針卡所建立的電連接路徑,將該定址訊號電路之各該定址訊號輸出端電連接於該半導體晶圓上該可定址待測元件陣列所對應之各該定址訊號輸入端; c. During the execution of the test task of the automatic tester, by the electrical connection path established by the probe card, each of the addressing signal output ends of the addressing signal circuit is electrically connected to the addressable component under test on the semiconductor wafer Each address signal input terminal corresponding to the array;
d.該自動測試機輸出控制訊號至該探針卡上的該定址訊號電路的該等輸入端,使得該定址訊號電路於該等定址訊號輸出端產生該多位元並行定址訊號,藉此控制該半導體晶圓上的該可定址待測元件陣列,進行切換選取其中至少一待測元件; d. The automatic test machine outputs control signals to the input terminals of the address signal circuit on the probe card, so that the address signal circuit generates the multi-bit parallel address signal at the address signal output terminals, thereby controlling The array of addressable devices to be tested on the semiconductor wafer is switched to select at least one device to be tested;
e.該自動測試機運用其測試資源對於所選取之該待測元件進行量測; e. The automatic test machine uses its test resources to measure the selected component under test;
f.持續重覆步驟d及步驟e,即能完成該可定址待測元件陣列之測試。 f. Repeat step d and step e continuously to complete the test of the addressable device under test array.
藉由上述方法,透過在該探針卡上設置該定址訊號電路,可以協助運用該自動測試機的有限資源,更有效率的進行該可定址待測元件陣列之測試,以降低大量取樣測試的時間成本與設備成本。 With the above method, by setting the addressing signal circuit on the probe card, the limited resources of the automatic test machine can be used to more efficiently perform the test of the addressable device under test array, thereby reducing the amount of sampling and testing. Time cost and equipment cost.
S1:步驟a S1: Step a
S2:步驟b S2: Step b
S3:步驟c S3: Step c
S4:步驟d S4: Step d
S5:步驟e S5: Step e
S6:步驟f S6: Step f
10:半導體晶圓 10: Semiconductor wafer
12:可定址待測元件陣列 12: Addressable array of components to be tested
121:定址訊號輸入端 121: Addressing signal input terminal
20:探針卡 20: Probe card
201:分壓電路 201: Voltage divider circuit
202:電阻器 202: resistor
203:繼電器 203: Relay
22:定址訊號電路 22: Addressing signal circuit
221:輸入端 221: Input
222:定址訊號輸出端 222: Addressing signal output terminal
223:多位元並行定址訊號 223: Multi-bit parallel address signal
24:重置訊號接腳 24: Reset signal pin
30:二極體 30: Diode
32:電容器 32: capacitor
40:自動測試機 40: automatic testing machine
50:待測元件 50: component under test
〔圖1〕為本發明的方法流程圖 [Figure 1] is a flowchart of the method of the present invention
〔圖2〕為本發明第一實施例的示意圖 [Figure 2] is a schematic diagram of the first embodiment of the present invention
〔圖3〕為本發明第二實施例的示意圖 [Figure 3] is a schematic diagram of the second embodiment of the present invention
〔圖4〕為本發明第二實施例的交直流電壓訊號示意圖 [Figure 4] is a schematic diagram of the AC and DC voltage signal of the second embodiment of the present invention
〔圖5〕為本發明第三實施例的示意圖 [Figure 5] is a schematic diagram of the third embodiment of the present invention
〔圖6〕為本發明第四實施例的示意圖 [Figure 6] is a schematic diagram of the fourth embodiment of the present invention
〔圖7〕為本發明第五實施例的示意圖 [Figure 7] is a schematic diagram of the fifth embodiment of the present invention
參閱圖1,本發明揭露一種晶圓製程良率分析之大量取樣測試的改良方法,包括: Referring to FIG. 1, the present invention discloses an improved method for mass sampling test for wafer process yield analysis, including:
步驟aS1. 設置至少一可定址待測元件陣列12在一半導體晶圓10上,該可定址待測元件陣列12具有複數定址訊號輸入端121。
Step aS1. At least one addressable device under
步驟bS2. 設置至少一定址訊號電路22在一探針卡20上,該定址訊號電路22具有複數輸入端221,用以接收一自動測試機40輸出的電源與控制訊號,該定址訊號電路22具有複數定址訊號輸出端222,可以輸出一多位元並行定址訊號223,該定址訊號電路22之設置目的在於接受該自動測試機40的控制以產生該多位元並行定址訊號223,因此係為一種設置於該探針卡20上的定址訊號產生器,並不是該自動測試機40的訊號分流器。
Step bS2. At least a certain
步驟cS3. 該自動測試機40執行測試任務期間,藉由該探針卡20所建立的電連接路徑,將該定址訊號電路22之各該定址訊號輸出端222電連接於該半導體晶圓10上的該可定址待測元件陣列12所對應之各該定址訊號輸入端121。
Step cS3. During the execution of the test task by the
步驟dS4. 該自動測試機40輸出控制訊號至該探針卡20上的該定址訊號電路22,使得該定址訊號電路22於該等定址訊號輸出端222產生該多位元並行定址訊號223,藉此控制該半導體晶圓10上的該可定址待測
元件陣列12,進行切換選取其中至少一待測元件50。
Step dS4. The
步驟eS5. 該自動測試機40運用其測試資源對於所選取之該待測元件50進行量測。
Step eS5. The
步驟fS6. 持續重覆步驟d及步驟e,即能完成該可定址待測元件陣列12之測試。
Step fS6. Repeat step d and step e continuously to complete the test of the
藉由上述的方法與步驟,尤其是在該探針卡20上設置該定址訊號電路22,能夠輔助產生這些原本必須藉由該自動測試機40本身的測試資源來提供的該多位元並行定址訊號223,使得該自動測試機40如同增設「定址訊號產生器」而獲得升級擴充,變得更有能力來支援該可定址待測元件陣列12之大量取樣測試的應用。
Through the above-mentioned methods and steps, especially the addressing
為了更清楚地描述本發明所提出的一種晶圓製程良率分析之大量取樣測試的改良方法,以下將配合圖式,詳盡說明本發明之實施例。 In order to more clearly describe an improved method of mass sampling test for wafer process yield analysis proposed by the present invention, the following will describe the embodiments of the present invention in detail with the drawings.
第一實施例請參閱圖2並搭配圖1,該自動測試機40只有8個電源量測單元(Source Measurement Unit),可以輸出或輸入電壓電流訊號,進行電壓電流量測,此外還有一個參考地單元(Ground Unit),該探針卡20至少有16根探針,而且該探針卡20上設置的該定址訊號電路22採用10位元的計數器電路,為一種序向邏輯電路,該定址訊號電路22具有電源輸入端(Vcc)、電源參考地(Gnd)、控制端(CLK)、重置訊號接腳24(RST)及複數定址訊號輸出端222(Q1~Q10),該自動測試機40使用三個電源量測單元與該參考地單元來控制該定址訊號電路22的運作。在此實施例中,該半導體晶圓10上所設置的該可定址待測元件陣列12具有解多工器電路及1024個該等待測元件50,各該待測元件50為三端點的元件,需要配置三個電源量測單元
(VHF、VHS、VL)進行量測。首先,該自動測試機40供應邏輯電路的工作電壓Vcc與Vcc2,並於步驟dS4之前,對該定址訊號電路22的該重置訊號接腳24(RST)輸出電壓訊號,把該計數器電路的狀態歸零,以完成該定址訊號電路22之狀態初始化;接著,該自動測試機40輸出一脈衝訊號到該定址訊號電路22的該控制端(CLK),操控該定址訊號電路22於該等定址訊號輸出端222(Q1~Q10)產生該多位元並行定址訊號223,再以該多位元並行定址訊號223控制該半導體晶圓10上的該解多工器電路,將測試端點(VHF、VHS、VL)切換連接至該可定址待測元件陣列12中的至少一該待測元件50,然後稍待電路穩定,該自動測試機40即可透過上述之測試端點來測試該待測元件50。於此後,該自動測試機40只要持續重複執行「輸出控制訊號」、「稍待電路穩定」、「測試所選取之各該待測元件50」這些步驟,最終即能完成該可定址待測元件陣列12的大量取樣測試任務。
For the first embodiment, please refer to Fig. 2 in conjunction with Fig. 1. The
第二實施例請參閱圖3及圖4並搭配圖1,該自動測試機40只有8個電源量測單元(Source Measurement Unit)及一個參考地單元(Ground Unit),為了節省這些十分有限的硬體資源,可以另外進行兩項輔助改良:
For the second embodiment, please refer to FIGS. 3 and 4 in conjunction with FIG. 1. The
1、可以一個較高的工作電壓來產生一個較低的工作電壓。例如:若該可定址待測元件陣列12的工作電壓(Vcc2)小於該探針卡20上的該定址訊號電路22的工作電壓(Vcc),就可於該探針卡20上設置一分壓電路201(voltage divider),使得該自動測試機40祇須提供較高的工作電壓(Vcc),再藉由該分壓電路201的協助來產生較低的工作電壓(Vcc2),以此方式來節省該自動測試機40的資源使用。
1. A higher working voltage can be used to generate a lower working voltage. For example: if the working voltage (Vcc2) of the addressable device under
2、可於該定址訊號電路22的電源接腳Vcc之電連接路徑上
串接一個二極體30,再並聯一個電容器32到電源參考地接腳(Gnd)來進行整流穩壓,如此即可藉由該自動測試機40的一個硬體資源來輸出交直流電壓訊號,以提供該定址訊號電路22所需的工作電壓(Vcc)以及切換選取任一該待測元件50所需的控制訊號(CLK);該交直流電壓訊號的具體形式可參見圖4所示範例。
2. It can be on the electrical connection path of the power pin Vcc of the address signal circuit 22
透過上述的兩項輔助改良,該自動測試機40就可以另有二個剩餘的電源量測單元能夠應用於更彈性的定址陣列電路設計或是設置更多類型的該等待測元件50,以進行大量取樣測試。
Through the above-mentioned two auxiliary improvements, the
第三實施例請參閱圖5並搭配圖1,該自動測試機40只有8個電源量測單元(Source Measurement Unit)及一個參考地單元(Ground Unit),若因為軟硬體或其它因素限制而導致該自動測試機40只能輸出電流訊號作為該探針卡20上的該定址訊號電路22的控制訊號源,可在上述控制訊號接腳(CLK)與電源參考地接腳(Gnd)之間設置一電阻器202,如此即可將該自動測試機40輸出的電流訊號轉換成電壓訊號。
For the third embodiment, please refer to FIG. 5 in conjunction with FIG. 1. The
第四實施例為第二實施例的延續,請參閱圖6並搭配圖1,本實施例亦採用穩壓設計以節省該自動測試機40的硬體資源使用,但是另外特別考量要儘量避免該自動測試機40的某些敏感量測功能受到該定址訊號電路22的干擾,於是可以在該探針卡20上設置至少一繼電器203,該繼電器203可提供該探針卡20必要的電路隔離功能,隔離該定址訊號電路22的該等輸入端221接腳與該等定址訊號輸出端222接腳。因此可使用至少一個電源量測單元以供應各該繼電器203所需的驅動電壓Vpp,在此實施例的示意圖中僅標示各該繼電器203,並未描繪各該繼電器203實際運作所需的供電線
路,以避免圖示內容過於複雜。由此實施例可知,若需要排除該定址訊號電路22可能對於該自動測試機40的某些敏感量測功能造成干擾,可以使用該等繼電器203來解決這方面的疑慮。藉由本發明的新方法,可以運用如此簡配的該自動測試機40來進行大量取樣測試,即使是有需要考量電路隔離功能。
The fourth embodiment is a continuation of the second embodiment. Please refer to FIG. 6 in conjunction with FIG. 1. This embodiment also adopts a voltage stabilization design to save the hardware resources of the
第五實施例請參閱圖7並搭配圖1,此實施例使用一款較新型的一自動測試機40,該自動測試機40至少具有25個電源量測單元(Source Measurement Unit),而且該探針卡20上設置一個12位元計數器電路來實現該定址訊號電路22,以控制該半導體晶圓10上所設置的一個更大型的一可定址待測元件陣列12,其陣列結構係由6個待測元件陣列並組而成,以共用複數定址訊號輸入端121(A1~A12),該可定址待測元件陣列12之中設置的該等待測元件50總數量有24576個,各該待測元件50皆為四端點元件,這樣的取樣數量十分可觀。該自動測試機40配置4個電源量測單元來控制該定址訊號電路22的運作,其餘21個電源量測單元使用於該可定址待測元件陣列12的電路電源以及測量所選取之各該待測元件50。於該自動測試機40執行測試任務期間,該探針卡20在該自動測試機40與該可定址待測元件陣列12之間建立必要的電連接路徑,然後該自動測試機40即可透過RST與CLK這兩個接腳來重置與控制該定址訊號電路22於該等定址訊號輸出端222產生該多位元並行定址訊號223,藉此同時控制該可定址待測元件陣列12之中6個並組的待測元件陣列,這樣就能同步切換選取6個該等待測元件50,接著再由該自動測試機40同步平行測試這6個被選取的該等待測元件50。藉由重覆上述切換選取與測試各該待測元件50的步驟,即可完成該半導體晶圓10的
先進製程良率統計分析所要求的大量取樣測試。
For the fifth embodiment, please refer to FIG. 7 in conjunction with FIG. 1. This embodiment uses a relatively new type of
上述實施例中,該探針卡20上所設置的該定址訊號電路22為單純的計數器邏輯電路,以循序定址方式來切換選取各該待測元件50。該自動測試機40所輸出至該定址訊號電路22的控制訊號為類比脈衝訊號,可為電壓脈衝訊號或電流脈衝訊號的形式。
In the above-mentioned embodiment, the
上述中,該探針卡20上所設置的該定址訊號電路22亦可使用比較複雜的數位功能電路來實現,使得該自動測試機40輸出至該定址訊號電路22的控制訊號可改用數位訊號,以支援更靈活的隨機定址切換能力。
In the above, the
歸納上述說明,藉由本發明方法可協助克服習知技術所面臨的缺失,具有上述眾多的優點及實用價值,在說明書的描述之中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而本發明可能在省略部分或全部這些特性細節的前提下,仍可實施;惟熟悉此技術之人士當可在不脫離本發明之精神與原則下對本發明進行變更與修改,而該等變更與修改,應皆涵蓋於如下申請專利範圍所界定之範疇中。 Summarizing the above description, the method of the present invention can help overcome the shortcomings faced by the conventional technology. It has the above-mentioned numerous advantages and practical values. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific Details; however, the present invention may still be implemented under the premise of omitting some or all of these characteristic details; but those familiar with this technology can make changes and modifications to the present invention without departing from the spirit and principle of the present invention, and these Changes and modifications shall be covered in the scope defined by the scope of the following patent applications.
S1:步驟a S1: Step a
S2:步驟b S2: Step b
S3:步驟c S3: Step c
S4:步驟d S4: Step d
S5:步驟e S5: Step e
S6:步驟f S6: Step f
10:半導體晶圓 10: Semiconductor wafer
12:可定址待測元件陣列 12: Addressable array of components to be tested
121:定址訊號輸入端 121: Addressing signal input terminal
20:探針卡 20: Probe card
22:定址訊號電路 22: Addressing signal circuit
221:輸入端 221: Input
222:定址訊號輸出端 222: Addressing signal output terminal
223:多位元並行定址訊號 223: Multi-bit parallel address signal
40:自動測試機 40: automatic testing machine
50:待測元件 50: component under test
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Citations (4)
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EP1523686B1 (en) * | 2002-07-12 | 2006-10-04 | FormFactor, Inc. | Compensation for test signal degradation due to dut fault |
WO2011022301A2 (en) * | 2009-08-18 | 2011-02-24 | Formfactor, Inc. | Wafer level contactor |
TW201122515A (en) * | 2009-12-30 | 2011-07-01 | Etron Technology Inc | Chip testing circuit |
US20160161554A1 (en) * | 2014-12-08 | 2016-06-09 | Esilicon Corporation | Wireless probes |
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EP1523686B1 (en) * | 2002-07-12 | 2006-10-04 | FormFactor, Inc. | Compensation for test signal degradation due to dut fault |
WO2011022301A2 (en) * | 2009-08-18 | 2011-02-24 | Formfactor, Inc. | Wafer level contactor |
TW201122515A (en) * | 2009-12-30 | 2011-07-01 | Etron Technology Inc | Chip testing circuit |
US20160161554A1 (en) * | 2014-12-08 | 2016-06-09 | Esilicon Corporation | Wireless probes |
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