TWI707892B - 正型光阻組成物 - Google Patents

正型光阻組成物 Download PDF

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Publication number
TWI707892B
TWI707892B TW105131918A TW105131918A TWI707892B TW I707892 B TWI707892 B TW I707892B TW 105131918 A TW105131918 A TW 105131918A TW 105131918 A TW105131918 A TW 105131918A TW I707892 B TWI707892 B TW I707892B
Authority
TW
Taiwan
Prior art keywords
novolac resin
mass
aforementioned
resin
positive photoresist
Prior art date
Application number
TW105131918A
Other languages
English (en)
Chinese (zh)
Other versions
TW201730227A (zh
Inventor
増田靖男
黒岩靖司
Original Assignee
日商東京應化工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW201730227A publication Critical patent/TW201730227A/zh
Application granted granted Critical
Publication of TWI707892B publication Critical patent/TWI707892B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
TW105131918A 2015-12-01 2016-10-03 正型光阻組成物 TWI707892B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-235031 2015-12-01
JP2015235031A JP6651337B2 (ja) 2015-12-01 2015-12-01 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
TW201730227A TW201730227A (zh) 2017-09-01
TWI707892B true TWI707892B (zh) 2020-10-21

Family

ID=59017169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105131918A TWI707892B (zh) 2015-12-01 2016-10-03 正型光阻組成物

Country Status (4)

Country Link
JP (1) JP6651337B2 (ja)
KR (1) KR102693589B1 (ja)
CN (1) CN106933034B (ja)
TW (1) TWI707892B (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH096014A (ja) * 1995-04-19 1997-01-10 Fuji Photo Film Co Ltd 感光性平版印刷版の処理方法
TW200506528A (en) * 2003-07-16 2005-02-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming resist pattern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297853C (zh) * 2003-09-30 2007-01-31 北京师范大学 热敏ctp版材用成像组合物、用于该组合物的产酸源及其制备
JP2005215137A (ja) * 2004-01-28 2005-08-11 Fuji Photo Film Co Ltd 感光性樹脂組成物、感光性転写材料、液晶配向制御用突起及びその製造方法、並びに液晶表示装置
KR20080070573A (ko) * 2007-01-26 2008-07-30 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 노볼락 수지 블렌드를 포함하는 포토레지스트
KR101034347B1 (ko) * 2007-06-08 2011-05-16 주식회사 엘지화학 감광성 수지 조성물
JP5599977B2 (ja) 2009-01-22 2014-10-01 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
KR20120076129A (ko) * 2010-12-29 2012-07-09 코오롱인더스트리 주식회사 광분해성 전자재료，이로부터 형성된 절연막 및 유기발광소자
KR101728820B1 (ko) * 2013-12-12 2017-04-20 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH096014A (ja) * 1995-04-19 1997-01-10 Fuji Photo Film Co Ltd 感光性平版印刷版の処理方法
TW200506528A (en) * 2003-07-16 2005-02-16 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming resist pattern

Also Published As

Publication number Publication date
CN106933034A (zh) 2017-07-07
KR102693589B1 (ko) 2024-08-08
JP6651337B2 (ja) 2020-02-19
KR20170064471A (ko) 2017-06-09
TW201730227A (zh) 2017-09-01
JP2017102255A (ja) 2017-06-08
CN106933034B (zh) 2023-01-06

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