TWI706927B - 氧化鋁燒結體及光學元件用下方基板 - Google Patents
氧化鋁燒結體及光學元件用下方基板 Download PDFInfo
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- TWI706927B TWI706927B TW105131225A TW105131225A TWI706927B TW I706927 B TWI706927 B TW I706927B TW 105131225 A TW105131225 A TW 105131225A TW 105131225 A TW105131225 A TW 105131225A TW I706927 B TWI706927 B TW I706927B
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- sintered body
- alumina sintered
- less
- alumina
- pores
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 239000000758 substrate Substances 0.000 title claims description 28
- 230000003287 optical effect Effects 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims abstract description 28
- 238000002834 transmittance Methods 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 description 38
- 239000000843 powder Substances 0.000 description 38
- 238000010304 firing Methods 0.000 description 22
- 238000000227 grinding Methods 0.000 description 14
- 239000003570 air Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000035515 penetration Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000004445 quantitative analysis Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- -1 3.9 parts by mass Substances 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000002775 capsule Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
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- 238000000748 compression moulding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 238000005238 degreasing Methods 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
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- 238000004020 luminiscence type Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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Abstract
本發明提供一種氧化鋁燒結體,係照射X射線時,在2θ=20°~70°的範圍內,使用X射線繞射剖析經由洛特格林(Lotgering)法所求得的c面配向度為5%以上,且以搖擺曲線(Rocking curve)所測定的XRC半高寬(half band width)為15.0°以下,以D-SIMS測定時的F含量未達0.99質量ppm,結晶粒徑為15~200μm,在縱向712.99μm×橫向753.90μm的視野,以倍率2000倍所拍攝的相片,經目視時直徑0.1μm以上的氣孔數為100個以下者。本發明的氧化鋁燒結體,係當厚度0.5mm時,在波長300nm~1000nm的直線穿透率高,且透明性佳。
Description
本發明係關於一種氧化鋁燒結體及光學元件用下方基板。
一直以來,氧化鋁燒結體以作為透明物體為人所知。例如,非專利文獻1中,對添加有MgO的氧化鋁懸濁液施加磁場進行注漿成形(slip-cast),經由在真空中1850℃燒成5小時,製作備有經配向的粒子的透明氧化鋁燒結體。例如,施加12特斯拉(tesla)的磁場所製作的氧化鋁燒結體,在波長600nm時的直線穿透率為70.3%,配向度高達97%。又,施加8特斯拉的磁場所製作的氧化鋁燒結體,在波長600nm時的直線穿透率為56%左右,配向度高達78%。再者,隨著施加的磁場降低為6特斯拉、4特斯拉時,直線穿透率與配向度皆降低。由此等結果,可推測得到隨著磁場的強的增加,直線穿透率或配向度皆變高的結論。
非專利文獻1:Ceramics International vol.38, pp5557-5561(2012)
然而,非專利文獻1中,若非施加如12特斯拉的高磁場時,則無法獲得配向度非常高且直線穿透率為50%以上的氧化鋁燒結體。目前僅極少數的機構擁有施加如此高磁場同時進行注漿成形的裝置。再者,所得的燒結體中有很多的氣孔。
本發明的主要目的,係提供一種解決此等課題,直線穿透率高且透明性佳的氧化鋁燒結體。
本發明的氧化鋁燒結體,照射X射線時,在2θ=20°~70°的範圍內,使用X射線繞射剖析經由洛特格林法所求得的c面配向度為5%以上,且以搖擺曲線所測定的XRC半高寬為15.0°以下,D-SIMS(動態二次離子質量分析)所測定的F含量未達0.99質量ppm,結晶粒徑為15~200μm,在縱向712.99μm×橫向753.90μm的視野,以倍率2000倍所拍攝的相片,經目視時直徑0.1μm以上的氣孔數為100個以下者。本發明的氧化鋁燒結體,即使配向度沒有非常高,依然直線穿透率高,且透明性佳。雖然無法斷言獲得如此優良的透明性的理由,然而,可推測係c面配向度、XRC半高寬、F含量、結晶粒徑及直徑0.1μm以上的氣孔數分別為適當的數值所複合賦予的結果。
本發明的光學元件用下方基板係由上述本發明的氧化鋁燒結體而成的基板。作為光學元件,例如可列舉LED、LD、太陽電池、感測器、光二極體、光學構件、窗材等。
10‧‧‧發光元件
12‧‧‧下方基板
14‧‧‧發光機能層
14a‧‧‧p型層
14b‧‧‧活性層
14c‧‧‧n型層
16‧‧‧組裝基板
20‧‧‧橫向型發光元件
22‧‧‧陰極電極
24‧‧‧透光性陽極電極
25‧‧‧陽極電極墊
30‧‧‧縱向型發光元件
32‧‧‧陽極電極
34‧‧‧陰極電極
第1圖係說明傾角(tilt angle)的示意圖。
第2圖係板狀氧化鋁粒子的示意圖;第2(a)圖為平面圖;第2(b)圖為正面圖。
第3圖係以TGG法製作氧化鋁燒結體的步驟的示意圖。
第4圖係發光元件10的概略剖面圖。
第5圖係橫向型發光元件20的概略剖面圖。
第6圖係表示縱向型發光元件30的製造步驟的概略剖面圖。
第7圖係說明搖擺曲線測定的示意圖。
第8圖係氧化鋁燒結體經研磨後的剖面高倍率相片。
本發明的氧化鋁燒結體,係照射X射線時,在2θ=20°~70°的範圍內,使用X射線繞射剖析經由洛特格林法所求得的c面配向度為5%以上,且以搖擺曲線所測定的XRC半高寬為15.0°以下,以D-SIMS所測定時的F含量未達0.99質量ppm,結晶粒徑為15~200μm,在縱向712.99μm×橫向753.90μm的視野,以倍率2000倍所拍攝的相片,經目視時直徑0.1μm以上的氣孔數為100個以下者。
c面配向度,係使用XRD裝置(例如,Rigaku製,RINT-TTR III)對氧化鋁燒結體的特定剖面(例如,與c面平行的剖面)平滑地研磨加工後,對此面照射X射線時,在2θ=20°~70°的範圍內,使用X射線繞射剖析,經由下式所計算
而得。c面係氧化鋁的(006)面。式中,P為由本發明的氧化鋁燒結體的XRD所取得的值,P0係由標準α-氧化鋁(JCPDS card No.46-1212)所算出的值。本發明的氧化鋁燒結係c面配向度為5%以上的氧化鋁燒結體。c面配向度以5%以上為佳,較佳為10%以上,更佳為20%以上,再更佳為60%以上,又再更佳為80%以上,復又再更佳為90%以上,特佳為96%以上。
再者,如JCPDS card No.46-1212所示,由於作為c面的氧化鋁(006)面的繞射強度較其他的指數面(index surface)強度小,即使有某種程度的配向,以洛特格林法所求得的c面配向度易於變小。因此,c面配向度5%代表相對應的配向狀態。例如,在已知的論文(Journal of the Ceramics Society of Japan,pp198-202(2011))中記載,以洛特格林法所求得的氧化鋁成形體的c面配向度顯著地小於實際的配向度(配向粒子的比例)。根據此論文的表2,當氧化鋁成形體的洛特格林法的c曲配向度為2.4%時,經由雙折射的測定所算出的c面配向粒子的比例相當於69%。因此,當本發明的氧化鋁燒結體的洛特格林法c面配向度為5%時,推測至少有70%以上的燒結粒子經配向於c面上。
XRC半高寬係氧化鋁基板的表面以X射線搖擺曲線法(Ω scan,亦即Ω掃瞄)所測定的X射線搖擺曲線的半高寬(XRC‧FWHM)。XRC‧FWHM係用於評估氧化鋁燒結體的配向軸(例如,c軸)與各氧化鋁粒子的結晶軸的傾斜(傾角)的指標,本發明者等發現當此等傾角變小時,透明性提升。第1圖係說明傾角的示意圖。從透明性的觀點來看,傾角以越小越好。XRC‧FWHM以15.0°以下為佳,較佳為10.0°以下,更佳為8.0°以下,又更佳為5.0°以下,又在更佳為3.2°以下,特佳為2.6°以下,較特佳又更佳為1.0°以下。
以D-SIMS測定時的F含量,以未達0.99質量ppm為佳,較佳為0.90質量ppm以下,檢出極限(0.1質量ppm)以下為更佳。Mg的含量,以ICP(inductive coupling plasma,感應耦合電漿)發光分析來測定。Mg的含量,以5000質量ppm以下為佳,較佳為3000質量ppm以下,更佳為1000質量ppm以下,特佳為500質量ppm以下,又再更佳為350ppm以下。又,Mg的含量,以20質量ppm以上為佳。Mg的添加形態,可列舉如MgO或MgF2、MgNO3等。Al、O、Mg、C、F以外的雜質元素的含量,以各在10質量ppm以下為佳。以C而言,以100質量ppm以下為佳,較佳為70質量ppm以下,更佳為50質量ppm。此等的含量,可經由例如以C、S而言,燃燒(高頻加熱)-紅外線吸收法,以N而言,惰性氣體熔解-熱傳導度法;以H而言,惰性氣體熔解-非分散型紅外線吸收法,此等以外的元素(主要是Si、Fe、Ti、Na、Ca、K、P、V、Cr、Mn、Co、Ni、Cu、Zn、Y、Zr、Pb、Bi、Li、Be、B、Cl、Sc、Ga、
Ge、As、Se、Br、Rb、Sr、Nb、Mo、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Cs、Ba、Hf、Ta、W、Ir、Pt、Au、Hg、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu),經ICP發光分析來測定。
結晶粒徑為燒結粒徑的平均值。結晶粒徑係對氧化鋁燒結體的特定剖面(例如,與c面平行的剖面)鏡面研磨的面施行熱蝕刻(thermal etching)處理後,拍攝此面的影像,於所得的影像中設定矩形的視野範圍,對於在矩形的視野範圍中拉出2條對角線時與對角線相交的全部粒子,求得粒子的內側的線段的長度,將此等的平均值乘上1.5所得的值。結晶粒徑以15~200μm為佳,較佳為20~200μm,更佳為25~100μm,又更佳為40~100μm,又再更佳為45~95μm。
直徑0.1μm以上的氣孔數,以如下的方式計數。亦即,將本發明的氧化鋁燒結體的任意剖面藉由離子銑(ion milling)而研磨後,對此經研磨的剖面以掃瞄式電子顯微鏡放大為倍率2000倍,在縱向712.99μm×橫向753.90μm的視野中,直徑0.1μm以上的氣孔數以目視計數。以離子銑方式的研磨,不會從剖面產生碎裂。且,作為離子銑所使用的研磨裝置,例如可列舉日本電子製造的離子束剖面研磨(Cross section polisher)。由於放大成倍率2000倍的相片中,氣孔以作為黑點呈現,只要是直徑0.1μm以上的氣孔尺寸,可經由目視充分辨識。此類氣孔數以100個以下為佳,較佳為50個以下,更佳為35個以下,又更佳為15個以下,特佳為8個以下。
本發明的氧化鋁燒結體,從該氧化鋁燒結體取出厚度0.5mm的樣品,在波長300~1000nm的直線穿透率具有高的值(例如,50%以上)。直線穿透率可使用分光光度計(例如,Perkin Elmer製造的Lambda 900)而測定。且,樣品的厚度換算成其他厚度時,只要利用以下的換算式即可。此式係引用自Scripta Materialia vol.69,pp362-365(2013)。式中,T1為直線穿透率的實測值,T2為換算後的直線穿透率,t1為厚度的實測值,t2為換算後的厚度,R為來自材料的表面反射(氧化鋁為0.14)。此直線穿透率以55%以上為佳,較佳為60%以上,更佳為70%以上。
T2=(1-R)(T1/(1-R))^(t2/t1)
以本發明的氧化鋁燒結體而言,c面配向度為5%以上且XRC半高寬為15.0°以下,F含量為檢出極限以下(0.1質量ppm以下),結晶粒徑為20~200μm,氣孔數為50個以下時,由於透明性提升因而較佳。亦即,從此等氧化鋁燒結體取出厚度0.5mm的樣品,測定在波長300~1000nm時的直線穿透率,則測定值為55%以上。
以本發明的氧化鋁燒結體而言,c面配向度為60%以上且XRC半高寬為5.0°以下,F含量為檢出極限以下,結晶粒徑為45~95μm,氣孔數為20個以下時,由於透明性提升因而較佳。亦即,從此等氧化鋁燒結體取出厚度0.5mm樣品,測定在波長300~1000nm時的直線穿透率,則測定值為70%以上。
以本發明的氧化鋁燒結體而言,c面配向度為96%以上且XRC半高寬為2.6°以下,F含量為檢出極限以下,結晶粒徑為45~95μm,氣孔數為2個以下時,由於透明性提升因而較佳。
本發明的氧化鋁燒結體可應用於作為用以形成膜的下方基板,可應用於作為成膜例如:GaN、ZnO、AlN、SiC、InN等的下方基板。本發明的氧化鋁燒結體可對成膜前的表面研磨因而較佳。藉此,易於使表面的凹凸消失,因此易於成膜且膜不易產生缺陷。
本發明的氧化鋁燒結體,可藉由例如將含有寬厚比(aspect ratio)為3以上的板狀氧化鋁粉末與平均粒徑較板狀氧化鋁粉末更小的微細氧化鋁粉末的氧化鋁原料粉末,以板狀氧化鋁粉末與微細氧化鋁粉末的混合比例為質量比T:(100-T)時,T為0.001以上,未達1的方式調製,對含有此氧化鋁原料粉末的成形用原料進行成形,成為成形體,將此成形體藉由燒成而製造。
板狀氧化鋁粉末的寬厚比係平均粒徑/平均厚度。在此,平均粒徑為粒子板面的長軸長的平均值,平均厚度為粒子的短軸長的平均值。此等值經由以掃瞄式電子顯微
鏡(SEM)觀察板狀氧化鋁粉末中的任意100個粒子而決定。第2圖為板狀氧化鋁粒子的示意圖,(a)為平面圖,(b)為正面圖。板狀氧化鋁粒子平視時的形狀大致為六角形,其粒徑如第2(a)圖所示,厚度如第2(b)圖所示。藉由使用含有寬厚比為3以上的板狀氧化鋁粉末的氧化鋁原料粉末,使最終所得的氧化鋁燒結體的配向度變高。板狀氧化鋁粉末的平均粒徑,從高配向化的觀點來看,以越大越好,以1.5μm以上為佳,較佳為5μm以上,更佳為10μm以上,特佳為15μm以上。然而,從緻密化的觀點來看,以越小越好,以30μm以下為佳。如此一來,以兼顧高配向與緻密化來看,平均粒徑以1.5μm~20μm為佳。
成形前的混合粉末的F含量,以設定為燒成後的氧化鋁燒結體中所含的F含量未達0.99質量ppm為佳,以設定為0.90質量ppm以下為更佳,以實質上為零(檢出極限以下)又更佳。藉由使包含板狀氧化鋁粉末與微細氧化鋁粉末的混合粉末成形,於成形時(薄帶成形(tape casting)、擠出成形、澆鑄成形、射出成形、單軸壓製成形等)板狀粒子容易配向。此外,於燒成時,板狀氧化鋁粉末成為種晶(板模,template),微細氧化鋁粉末成為基質,板模混入基質當中同時同質磊晶成長。此種製法稱為TGG(Templated Grain Growth)法,以TGG法製造氧化鋁燒結體的步驟的示意圖如第3圖所示。TGG法可藉由板狀氧化鋁粉末與微細氧化鋁粉末的粒徑或混合比,控制所得的氧化鋁燒結體的微細構造,相較於僅板狀氧化鋁粉末單體燒成的情況,易於緻密化,且易於提高配向度。
燒成成形體時的燒成溫度(最高到達溫度),以1800℃以上為佳,較佳為1850℃以上,更佳為1850~2050℃,又更佳為1900~2000℃。此外,燒成方法以加壓燒成為佳。作為加壓燒成,可列舉如熱板壓製燒成或HIP燒成、電漿放電燒成(SPS)等。且,加壓燒成前亦可施行常壓予備燒成。進行HIP燒成時亦可使用密封艙(capsule)法。熱板壓製燒成時的壓力,以50kgf/cm2以上為佳,較佳為200kgf/cm2以上。HIP燒成時的壓力,以1000kgf/cm2以上為佳,較佳為2000kgf/cm2以上。雖然燒成環境氣體並無特別限定,然而,以空氣、氮氣、氬等惰性氣體;真空環境下的任一者為佳,更佳為氮氣、氬環境氣體下,最佳為氮氣環境氣體。雖然無法推斷氮氣環境氣體為佳的理由,但可獲得高透明性。從燒成中的最高到達溫度開始的降溫時,可立即撤除壓力,亦可在預定溫度(設定在1000~1400℃(較佳為1100~1300℃)範圍內的溫度)施加50kgf/cm2以上的加壓,之後再撤除壓力。
本發明的光學元件用下方基板為由上述本發明的氧化鋁燒結體而成的基板。作為光學元件,可列舉如發光元件或受光元件。例如,於本發明的光學元件用下方基板成膜GaN層,相較於使用藍寶石作為下方基板的情形,可作為大型且便宜的LED等發光基板使用。本發明的光學元件用下方基板為了要透明可使用雷射剝離將基板剝離。此外,在不剝離下方基板的情形下,亦可從下方基板側將光取出。且,GaN層之外,亦可形成ZnO層、AlN層、InN層等。
本發明的光學元件用下方基板應用於發光元件的
範例如下所示。如第4圖所示,發光元件10具備下方基板12、形成於下方基板12上的發光機能層14。發光機能層14係藉由施加電壓依LED的發光原理為基礎而發光者,於此例中,從靠近下方基板12側開始,依序積層n型層14c、活性層14b、p型層14a。此發光機能層14可由GaN系材料、ZnO系材料、AlN系材料等製作。
如第5圖所示,橫向型發光元件20係於發光元件10當中的發光機能層14的外圍處,使n型層14c的表面成為高低差的方式而形成,於n型層14c的高低差面安置陰極電極22,於p型層14a的表面隔著透光性陽極電極24設置陽極電極墊25者。根據此橫向型發光元件20,電流並非順著發光機能層14的法線方向而是水平方向流動。
如第6圖的下段所示,縱向型發光元件30係於發光機能層14的n型層14c的表面配置陰極電極34,於p型層14a的表面隔著陽極電極32裝配組裝基板16者。此縱向型發光元件30係於發光元件10(第6圖的上段)的p型層14a的表面形成陽極電極32,於組裝基板16接合陽極電極32(第6圖的中段),將下方基板12以雷射剝離法去除,於露出的n型層14c的表面形成陰極電極34而製作。根據此縱向型發光元件30,電流順著發光機能層14的法線方向流動。以此方式利用雷射剝離法,使下方基板12的直線穿透率變大因此透光性高。此外,本發明的透明氧化鋁燒結體,不僅可用於光學元件用下方基板或光學元件,亦可應用於磊晶成長用基板、靜電夾具等。
[實驗例1]
1.氧化鋁燒結體的製作
(1)粉末混合、薄帶成形
將市售的板狀氧化鋁粉末(YFA10030、Kinseimatec製造、平均粒徑10μm、平均厚度0.35μm、寬厚比29)0.9質量份,與微細氧化鋁粉末(TM-DAR、平均粒徑0.1μm、大明化學製)99.1質量份混合,成為混合氧化鋁粉末。當板狀氧化鋁粉末與微細氧化鋁粉末的質量比以T:(100-T)表示時,T=0.9。相對於此混合氧化鋁粉末100質量份,添加氧化鎂(500A、Ube Materials製)0.0125質量份(125質量ppm)、作為黏結劑的聚乙烯縮丁醛(品號BM-2、積水化學工業製)7.8質量份、作為塑化劑的苯二甲酸二(2-乙基己基)酯(黑金化成製)3.9質量份、作為分散劑的山梨醇酐三油酸酯(RHEODOL SP-O30、花王製)2質量份、作為分散媒的2-乙基己醇並混合。分散媒的量,以使料漿黏度成為20000cP的方式而調整。藉此所調製的料漿以刮刀(doctor blade)法於PET膜上使乾燥後的厚度成為20μm的方式成形薄片狀。所得的薄帶切斷成為直徑50.8mm(2 inch)的圓形後,積層150片,置於厚度10mm的鋁板上後,放入封裝中使內部成為真空,進行真空包裝。將此真空包在85℃的溫水中,以100kgf/cm2的壓力,施行等壓壓製(isostatic pressing),得到圓板狀的成形體。
(2)燒成
將所得的成形體放置於脫脂爐中,以600℃ 10小時的條件
進行脫脂。所得的脫脂體使用石墨製的模具,以熱板壓製在氮氣中,以燒成溫度(最高到達溫度)1975℃ 4小時,面壓200kgf/cm2的條件燒成,得到氧化鋁燒結體。且,維持加壓從燒成溫度開始降溫至1200℃為止,在未達1200℃的溫度領域則釋放加壓至零。
(3)表面研磨
所得的氧化鋁燒結體的板面,使用鑽石粗粒對表裡兩面進行鏡面研磨成為厚度0.5mm,經研磨的燒結體(樣品)依序分別以丙酮、乙醇、離子交換水洗淨10分鐘,獲得c面配向度、直線穿透率、密度(觀察有無氣孔)用的樣品。
2.氧化鋁燒結體的特性
(1)計算c面配向度
為了確認所得的氧化鋁燒結體的配向度,經由XRD測定c面配向度。經鏡面研磨後的氧化鋁燒結體,對其研磨面使用XRD裝置(Rigaku製、RINT-TTR III)照射X射線時,在2θ=20~70°的範圍,測定XRD剖析。具體而言,使用CuKα射線,以電壓50kV、電流300mA的條件測定。c面配向度經由洛特格林法計算。具體而言,經由前揭的算式算出。實驗例1的氧化鋁燒結體的c面配向度為100%。
(2)搖擺曲線測定
對氧化鋁燒結體的板面(與測定c面配向度時相同的面),如第7圖所示使X射線源與檢測器連動進行掃瞄,測定所得的曲線的半高寬(亦稱XRC‧FWHM)。此2θ(檢測器與入射X射線之間形成的角度)的值固定在其繞射峰值的位置,僅掃瞄
ω(樣品基板面與入射X射線形成的角度)的測定方法,稱為搖擺曲線測定。裝置使用Rigaku製造的RINT-TTR III,使用CuKα射線,以電壓50kV、電流300mA的條件,ω掃瞄範圍為3.8°~38.8°。實驗例1的氧化鋁燒結體的XRC‧FWHM為3.2°。
(3)純度
(3-1)F的定量分析
經鏡面研磨後的氧化鋁燒結體,以D-SIMS(CAMECA製IMS-6f)進行分析。測定條件如下述。
‧一次離子種:Cs+
‧一次離子加速能量:14~15eV
‧二次離子極性:Negative
‧電荷補償:E-gun
‧濺鍍循環:100~500回
將200-300濺鍍循環間的平均值作為F量採用。定量分析時,以與分析樣品相同同組成(AlO)的已知濃度的標準樣品,以與分析樣品相同條件進行測定,求得相對靈敏度係數進行定量。其結果為燒結體中的F量為檢出極限(0.1質量ppm)以下。
(3-2)Mg的定量分析
將氧化鋁燒結體於純度99.9%的氧化鋁研缽粉碎後,依照以JISR 1649為基準的加壓硫酸分解法,將板狀氧化鋁粉末溶解,藉由ICP(感應耦合電漿)發光分析裝置(Hitachi High-Tech Science製造的PS3520UV-DD)進行定量分析。檢出實驗例1的氧化鋁燒結體的Mg量為64質量ppm。
(3-3)其他元素的定量分析
C、S:使用碳‧硫分析裝置(LECO製造CS844),依照燃燒(高頻加熱)-紅外線吸收法進行分析。
N:使用氧‧氮氣分析裝置(堀場製作所製造EMGA-650W),依照惰性氣體熔解-熱傳導度法進行分析。
H:以氫分析裝置(堀場製作所製造EMGA-921),依照惰性氣體熔解-非分散型紅外線吸收法進行分析。
上述以外的雜質元素(主要是Si、Fe、Ti、Na、Ca、Mg、K、P、V、Cr、Mn、Co、Ni、Cu、Zn、Y、Zr、Pb、Bi、Li、Be、B、Cl、Sc、Ga、Ge、As、Se、Br、Rb、Sr、Nb、Mo、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Cs、Ba、Hf、Ta、W、Ir、Pt、Au、Hg、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu):依照以JISR 1649為基準的加壓硫酸分解法,將板狀氧化鋁粉末溶解,藉由ICP(感應耦合電漿)發光分析裝置(Hitachi High-Tech Science製造PS3520UV-DD)而分析。
(4)氣孔
對所得的氧化鋁燒結體的任意剖面使用鑽石粗粒進行予備研磨後,以離子束剖面研磨(CP)(日本電子製、IB-09010CP)研磨。CP屬於離子銑的範疇。使用CP則不會在研磨面產生碎裂。所得的剖面以掃瞄式電子顯微鏡(日本電子製,JSM-6390)拍攝。具體而言,觀察的倍率係將縱向47.53μm×橫向50.26μm的視野,以倍率2000倍所拍攝的相片,以縱向15張、橫向15張的連續相片(縱向712.99μm×橫向753.90μm)的方
式排列,經由目視,計數直徑0.1μm以上的氣孔數。如第8圖的相片所示,氣孔與非氣孔的部分,明暗相當清楚,因此可經目視非常容易地辨別。實驗例1的氧化鋁燒結體經確認的氣孔數為33個。且,氣孔的直徑為氣孔的外圍上的2定點之間距離最大的長度。
(5)結晶粒徑
鏡面研磨後的氧化鋁燒結體放入純度99.5質量%的高純度氧化鋁製的鞘(容積750cm3)中,在空氣中1550℃ 45分鐘,進行熱蝕刻處理。藉由進行此熱蝕刻處理,由於在粒內部與粒邊界的蝕刻率不同,故可明顯地觀察到粒界。進行此熱蝕刻處理的面的影像,以掃瞄式電子顯微鏡(日本電子製、JSM-6390)拍攝。視野範圍如以下方式設定。亦即,設定使當於所得的影像上配置長方形並拉出其對角線時,任一對角線皆與10個至30個的粒子相超的長方形的尺寸,將此長方形設定在視野範圍。然後,對此長方形的2條對角線相交的全部粒子,將每個粒子的內側的線段的長度加以平均後乘上1.5的值作為板面的平均粒徑。實驗例1的氧化鋁燒結體的平均粒徑(結晶粒徑)為44μm。
(6)直線穿透率
從所得的氧化鋁燒結體切出10mm×10mm的大小,於 68mm的金屬製研磨平板(surface plate)的最外圍處的90°固定4處,在SiC研磨紙上,僅負載金屬製研磨平板與研磨治具的荷重(總共1314g)的狀態,以#800粗磨10分鐘,以#1200粗磨5分鐘(予備研磨)。之後,在陶瓷研磨平板上使用鑽石粗粒
進行粗磨。粗磨係以粗粒尺寸1μm進行30分鐘,之後,以粗粒尺寸0.5μm進行2小時,研磨後的10mm×10mm×0.5mm厚的樣品,依序分別以丙酮、乙醇、離子交換水洗淨3分鐘後,使用分光光度計(Perkin Elmer製、Lambda 900),在波長300~1000nm測定直線穿透率。實驗例1的氧化鋁燒結體,在波長300~1000nm的直線穿透率為60.4%以上。
以上的實驗例1的氧化鋁燒結體的製造條件及特性列於表1中。且,表1的直線穿透率欄中係記載在波長300~1000nm時直線穿透率的最小值。
[實驗例2~13]
實驗例2~13以實驗例1為基準,以如表1所示的氧化鋁燒結體的製造條件製作氧化鋁燒結體。具體而言,實驗例2、3除了燒成溫度分別為1900℃、1850℃以外,其餘與實驗例1同樣地製作氧化鋁燒結體。實驗例4~7、9~12,除了調整T(混合氧化鋁粉末中的板狀氧化鋁粉末的質量%)為如表1所示的值以外,其餘與實驗例1同樣地製作氧化鋁燒結體。實驗例8以燒成溫度1975℃ 2小時,面壓1886kgf/cm2的條件,進行HIP燒成,獲得氧化鋁燒結體。以HIP燒成而言,1975℃的保溫結束後,維持面壓1000kgf/cm2以上的高壓的狀態進行降溫至1200℃為止。實驗例13除了T成為2、燒成溫度成為1800℃以外,其餘與實驗例1同樣地製作氧化鋁燒結體。針對此等氧化鋁燒結體,求得上述2.(1)~(5)的特性。其結果如表1所示。
[實驗例14~22]
實驗例14~22以實驗例1為基準,以如表1所示的氧化鋁燒結體的製造條件製作氧化鋁燒結體。
實驗例14、19~22以如下製造條件製造板狀氧化鋁粉末,與微細氧化鋁粉末混合而製作燒結體。將高純度γ-氧化鋁(TM-300D、大明化學製)96質量份、高純度AlF3(関東化學製、鹿特級)4質量份、作為種晶的高純度α-氧化鋁(TM-DAR、大明化學製、D50=1μm)0.17質量份,作為溶媒的IPA(異丙醇),使用 2mm的氧化鋁球,進行球磨(pot mill)5小時而混合。所得的混合粉末中的F、H、C、S以外的雜質元
素的質量比例的合計為1000ppm以下。將所得的混合原料粉末300g放入純度99.5質量%的高純度氧化鋁製的鞘(容積750cm3)中,以純度99.5質量%的高純度氧化鋁製的蓋覆蓋,在電氣爐內空氣流動(air flow)中,在900℃熱處理3小時,空器流量為25000cc/min。熱處理後的粉末於空氣中,在1150℃退火處理40小時後,使用 2mm的氧化鋁球,粉碎4小時,獲得平均粒徑2μm、平均厚度0.2μm、寬厚比10的板狀氧化鋁粉末。粒子的平均粒徑、平均厚度,以掃瞄式電子顯微鏡(SEM)觀察板狀氧化鋁粉末中的任意100個粒子而決定。平均粒徑為粒子的長軸長的平均值,平均厚度為粒子的短軸長的平均值,寬厚比為平均粒徑/平均厚度。所得的板狀氧化鋁粉未為α-氧化鋁。
實驗例17、18係使用市售的板狀氧化鋁粉末(YFA00610、Kinseimatec製、平均粒徑0.6μm、平均厚度0.06μm、寬厚比10)製作燒結體。針對此等氧化鋁燒結體,求得上述2.(1)~(5)的特性。其結果如表1所示。
[評估]
實驗例1~11、14~19的氧化鋁燒結體皆為c面配向度為5%以上,XRC半高寬為15.0°以下,F含量為檢出極限以下,結晶粒徑為15~200μm,直徑0.1μm以上的氣孔數為100個以下。此等實驗例所得的氧化鋁燒結體的厚度成為0.5mm時,在波長300nm~1000nm的直線穿透率為50%以上,直線透過性高且透明性佳。雖然無法斷言獲得如此優良透明性的理由,然而,可推測係c面配向度、XRC半高寬、F含量、結晶粒徑及
直徑0.1μm以上的氣孔數分別為適當的數值所複合賦予的結果。
此外,實驗例1、2、4~11、14、16~19為c面配向度為5%以上,XRC半高寬為15.0°以下,結晶粒徑為20~200μm,直徑0.1μm以上的氣孔數為50個以下。此等的實驗例所得的氧化鋁燒結體的厚度成為0.5mm時,在波長300nm~1000nm的直線穿透率為55%以上,透明性更佳。
再者,實驗例1、4~10、16為c面配向度為60%以上,XRC半高寬為5.0°以下,結晶粒徑為45~95μm,直徑0.1μm以上的氣孔數為35個以下。此等實驗例所得的氧化鋁燒結體的厚度成為0.5mm時,在波長300nm~1000nm的直線穿透率為60%以上,透明性更佳。此等當中,特別是以實驗例9的氧化鋁燒結體的直線穿透率為78%以上,較其他顯著更高。
另一方面,實驗例12為c面配向度低至1.2%(未達5%),實驗例13為氣孔數多達112個(超過100個),因此,皆直線穿透率低。實驗例20為XRC半高寬為15.9°(超過15°),實驗例21為c面配向度低至1.4%(未達5%),實驗例22為燒結體的平均粒徑為211μm(超過200μm),因此,皆直線穿透率低。
且,實驗例1~11、14~19相當於本發明的實施例,實驗例12、13、20~22相當於比較例。本發明並不限定於上述實驗例,在本發明技術的範圍內,可經由各種樣態而實施。
本申請案以主張2015年9月30日申請的日本專
利申請第2015-193943號優先權為基礎,以引用的方式將其全部內容包含於本說明書中。
(產業可利用性)
本發明可應用於例如LED、LD、太陽電池、感測器、光二極體、光學構件、窗材等光學元件中。
Claims (10)
- 一種氧化鋁燒結體,照射X射線時,在2θ=20°~70°的範圍內,使用X射線繞射剖析,經由洛特格林(Lotgering)法所求得的c面配向度為5%以上,且以搖擺曲線(Rocking curve)所測定的XRC半高寬為15.0°以下,以D-SIMS測定時的F含量未達0.99質量ppm,結晶粒徑為15~200μm,在縱向712.99μm×橫向753.90μm的視野,以倍率2000倍所拍攝的相片,經目視時,直徑0.1μm以上的氣孔數為100個以下。
- 根據申請專利範圍第1項之氧化鋁燒結體,其中,上述F含量為0.1質量ppm以下。
- 根據申請專利範圍第1或2項之氧化鋁燒結體,其中,上述結晶粒徑為20~200μm。
- 根據申請專利範圍第1或2項之氧化鋁燒結體,其中,上述氣孔數為50個以下。
- 根據申請專利範圍第1項之氧化鋁燒結體,其中,上述F含量為0.1質量ppm以下,上述結晶粒徑為20~200μm,上述氣孔數為50個以下。
- 根據申請專利範圍第5項之氧化鋁燒結體,其中,上述c面配向度為60%以上,且上述XRC半高寬為5.0°以下,上述結晶粒徑為40~95μm,上述氣孔數為35個以下。
- 根據申請專利範圍第6項之氧化鋁燒結體,其中,上述結 晶粒徑為45~95μm,上述氣孔數為20個以下。
- 根據申請專利範圍第7項中之氧化鋁燒結體,其中,上述c面配向度為96%以上,且上述XRC半高寬為2.6°以下,上述氣孔數為15個以下。
- 根據申請專利範圍第1或2項之氧化鋁燒結體,其中,厚度0.5mm的上述氧化鋁燒結體,在300~1000nm的直線穿透率為78%以上。
- 一種光學元件用下方基板,係由申請專利範圍第1至9項中任一項之氧化鋁燒結體所構成。
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US9508904B2 (en) * | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
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