TWI699817B - 用雷射形成虛擬鍺基板的方法 - Google Patents

用雷射形成虛擬鍺基板的方法 Download PDF

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TWI699817B
TWI699817B TW104129315A TW104129315A TWI699817B TW I699817 B TWI699817 B TW I699817B TW 104129315 A TW104129315 A TW 104129315A TW 104129315 A TW104129315 A TW 104129315A TW I699817 B TWI699817 B TW I699817B
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germanium layer
layer
germanium
laser beam
substrate
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馬丁 格林
曉靜 郝
穎兒 何
李蔚
劉紫恒
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澳大利亞商新南創新私人有限公司
欣欣天然氣股份有限公司
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Abstract

本揭露提供一種製造半導體裝置的方法。再者，本揭露提供根據該發明製造的一光伏打裝置與一發光二極體。該方法包含使用相容於高體積、低成本製造的沈積技術來形成一鍺層之該等步驟，譬如磁控濺鍍以及暴露該鍺層於雷射光，以減少在該鍺層中的該缺陷數目。在施行該方法以後，該鍺層可被使用當作用於Ⅲ-V族材料生長的一虛擬鍺基板。

Description

用雷射形成虛擬鍺基板的方法
本發明通常係關於一種製造半導體裝置的方法。
商業單接面矽基太陽能電池具有29%的理論轉換效率極限。大概25%的記錄效率已經被顯示用於以實驗室為主的太陽能電池。
藉由使用不同材料的太陽能電池堆疊於彼此之上，可得到更高的轉換效率。迄今，最高的轉換效率已經使用以Ⅲ-V族半導體材料為基礎的太陽能電池堆疊來得到。包含四個堆疊Ⅲ-V族太陽能電池的記錄裝置已經達到在濃度297光強上的轉換效率44.7%。
這些Ⅲ-V族堆疊太陽能電池已經在空間應用中被使用多年。最近，它們被使用於小的集光太陽能電池電廠中。這些電池的非常高製造成本使它們不能變成用於主要電廠或住宅光伏打系統的切實可行的解決方式。
為了得到非常高的轉換效率，使用以製造光伏打裝置的Ⅲ-V族材料必須具有極低濃度的物理與電性缺陷。為了達到這些缺陷濃度，該等材料必須在晶格匹配Ⅲ-V族結構的結晶鍺基板或磊晶鍺層上製造。
例如，結晶鍺提供非常良好的晶格參數以用於多種Ⅲ-V族材料之生長。鍺基板則被廣泛地使用來製造Ⅲ-V族太陽能電池。不過，這 些基板製造費用貴且經常占整個太陽能電池裝置成本的三分之一。另一方面，磊晶鍺層藉由分子束磊晶(MBE)或化學氣相沈積(CVD)技術來生長。這些技術需要高真空(各別為5×10-11毫巴以及1.5×10-9毫巴)且使用譬如鍺烷與矽烷的毒氣。
降低Ⅲ-V族高效率太陽能電池價格的其中一項挑戰是維持晶格匹配特性的同時還要減少基板的成本。
根據第一態樣，本發明提供一種用於製造半導體裝置的方法，其包含下列步驟：提供一基板；將一鍺層形成於該基板上，該鍺層具有晶格缺陷的一濃度；將該鍺層的一區域暴露到雷射光；以及將至少一半導體裝置形成在該鍺層之該暴露區域的一表面部份上；其中將該鍺層的該區域暴露到雷射光的該步驟係以使得在該表面部份上之晶格缺陷的該濃度能夠減少的一方式來實行。
該等晶格缺陷可包含貫穿式差排缺陷。該基板可包含矽材料且可以是具有一結晶定向的矽晶晶圓。在施行該方法以後，在該鍺層中之晶格缺陷的濃度會小於107缺陷/cm2。
在實施例中，實行將該鍺層之該區域暴露於雷射光的該步驟，使得該鍺層之該區域的至少一部份在暴露期間內熔化。該熔化部份包含該表面部份。
一般而言，該鍺層與該基板形成一介面。該熔化部份部份地延伸入該鍺層的該區域內而沒有到達該介面，或者整個延伸到該鍺層的該區域內而到達該介面。
在一些實施例中，形成一鍺層的該步驟包含從含有Ge的一濺鍍靶將Ge濺鍍到該基板上。該濺鍍步驟包含以介於200℃與400℃之間的一溫度來加熱該基板之該步驟。
該濺鍍製程係以介於0.1毫托與5毫托之間的壓力來施行。該濺鍍速率介於1nm/min與10nm/min之間。進一步，該基板以介於10rev/min與50rev/min之間的一轉動速率來轉動。
在一些實施例中，將該鍺層沈積以後，將一介質層濺鍍到該鍺層上。該介質層功能如同用於該鍺層的一保護層。該介質層可包含二氧化矽。在將該鍺層的該區域暴露到雷射光以後，可化學性移除該介質層，使得該鍺層能夠暴露到經過該介質層的雷射光。
在實施例中，將該鍺層的一區域暴露到雷射光的該步驟包含產生一連續波雷射光束且引導該連續波雷射光束朝該鍺層之一第一部份的該步驟。該第一部份位於該鍺層的一邊緣上。
將該雷射光束沿著該鍺層從該第一部份移動到一第二部份。例如，以包含介於10mm/min與1000mm/min之間的一速率，將該雷射光束沿著該鍺層移動。
有利地，藉由沿著該鍺層來移動該雷射光束，暴露到該雷射光束之該鍺層的該部份暫時地熔化，同時在該雷射光束自該部份移開以後，將該部份暴露到該雷射光束，且快速地再結晶。這容許該熔化的鍺部份以與事先再結晶之相鄰鍺部份相似的晶體結構與缺陷濃度而再結晶。換言之，該鍺層會被融化且被「側向」且快速地再結晶。儘管矽與鍺之間晶格不匹配，但這容許將缺陷濃度維持地非常低。
將該鍺層的該區域暴露到該雷射光束，其總時間介於10ms與500ms之間。該雷射光束能量密度則可介於80J/cm2與350J/cm2之間。
在一些實施例中，該雷射光束使用一LIMO連續波二極體雷射產生。該雷射光束的波長介於230nm與1000nm之間，且該雷射光束尺寸介於8nm與16nm之間、其半高寬(FWHM)介於100μm與200μm之間。
在一些實施例中，在該光線暴露步驟內，將該基板與該鍺層加熱。例如，它們可被加熱到介於400℃與700℃之間的溫度。
在實施例中，形成至少一半導體裝置到該鍺層之該區域之一表面部份上的該步驟包含生長包含Ⅲ-V族化合物材料之複數層的該步驟。該等複數層包含Ⅲ-V族化合物材料且形成具有30%以上之能量轉換效率的多接面Ⅲ-V族太陽能電池或高效率的發光二極體。
根據第二態樣，本發明提供一種根據第一態樣之方法所製造的光伏打裝置。該鍺層具有介於20nm與400nm之間的一厚度。
在實施例中，該至少一太陽能電池結構包含至少三個Ⅲ-V族太陽能電池的一結構。
在一些實施例中，可將該鍺層沈積在一矽太陽能電池上，且可使用該矽太陽能電池當作在一多接面太陽能電池結構中的一底部電池。在這些實施例中，將該鍺層的該厚度維持在一最小值，以將該鍺的光吸收最小化。
根據第三態樣，本發明提供一種根據第一態樣來製造的發光二極體裝置。該發光二極體的該鍺層具有介於100nm與500nm之間的一厚度。
有利的實施例提供一種製造光伏打裝置或發光二極體裝置的方法。該方法包含形成一鍺層於一矽基板上且將該鍺層暴露於雷射光之該步驟。該鍺層可使用一物理氣相沈積(PVD)技術來形成，譬如濺鍍，且如此避免一CVD或MBE步驟。該濺鍍鍺層包含晶格缺陷，譬如貫穿式差排缺陷。這些缺陷的密度藉由雷射光明顯減少。該雷射光移動穿過該鍺層且熔化以低濃度缺陷「側向」再結晶之該鍺層的部份。在雷射暴露以後之在鍺層表面上的缺陷密度係低到足以容許Ⅲ-V族材料生長，以產生「虛擬鍺」基板，以用於多接面高效率太陽能電池的生長或高效率發光二極體。
10‧‧‧流程圖
12‧‧‧步驟
14‧‧‧步驟
16‧‧‧步驟
18‧‧‧步驟
20‧‧‧流程圖
21‧‧‧步驟
22‧‧‧步驟
24‧‧‧步驟
26‧‧‧步驟
28‧‧‧步驟
30‧‧‧裝置
32‧‧‧矽晶基板
32a‧‧‧矽晶基板
32b‧‧‧單一介面太陽能電池
34‧‧‧鍺層
34a‧‧‧鍺層
34b‧‧‧鍺層
36‧‧‧雷射光束
38‧‧‧二極體雷射
40a‧‧‧光伏打裝置
40b‧‧‧光伏打裝置
45a‧‧‧Ⅲ-V族太陽能電池
46a‧‧‧Ⅲ-V族太陽能電池
46b‧‧‧Ⅲ-V族太陽能電池
47a‧‧‧Ⅲ-V族太陽能電池
47b‧‧‧Ⅲ-V族太陽能電池
48a‧‧‧傳導層
48b‧‧‧傳導層
49a‧‧‧電性接點
49b‧‧‧電性接點
52‧‧‧二極體雷射退火以前的薄膜
57‧‧‧頂部層
58‧‧‧缺陷底部層
62‧‧‧深度
66‧‧‧深度
70‧‧‧影像
71‧‧‧矽基板
72‧‧‧鍺層
73‧‧‧影像
74‧‧‧矽基板
75‧‧‧鍺層
76‧‧‧圖
80‧‧‧拉曼圖
82‧‧‧軌跡
84‧‧‧軌跡
90‧‧‧發光二極體結構
92‧‧‧鍺層
93‧‧‧矽基板
94‧‧‧緩衝層
95‧‧‧DBR(分散布拉格反射器)層
96‧‧‧發光層
97‧‧‧第一傳導型層
98‧‧‧第二傳導型層
99‧‧‧金屬接點
本發明的特徵與優點將從下面的實施方式、僅僅經由實例、參考附圖而變得明顯可見，其中：圖1與圖2係為描畫根據諸實施例來製造光伏打裝置所需要之基礎步驟的流程圖；圖3係為根據一項實施例之一裝置暴露到雷射光的示意圖；圖4顯示根據諸實施例之光伏打裝置的示意圖示；圖5與圖6顯示根據一項實施例所製造之鍺層的TEM截面影像；圖7顯示根據一項實施例所製造之鍺層的TEM截面影像(a)以及代表根據一項實施例所製造之鍺層之標準化峰值溫度的圖(b)；圖8顯示根據諸實施例之剛沈積的鍺層與被退火之鍺層之間的拉曼比較；圖9顯示根據諸實施例之發光二極體裝置的示意圖示。
本發明的實施例係關於一種使用鍺層來製造半導體裝置的方法。該方法包含形成鍺層之步驟以及將該鍺層的區域暴露到雷射光的步驟。暴露到雷射光容許減少在鍺層中的缺陷濃度。在暴露以後，鍺層的品質使得Ⅲ-V族半導體材料能夠生長在鍺層上，以形成太陽能電池或發光二極體。在將鍺層暴露到雷射光的期間內，缺陷的濃度，特別是貫穿式差排 缺陷，會被減少，使得鍺層之表面部分的結晶性能夠改善，在此，半導體裝置被形成。
磊晶鍺層通常使用於Ⅲ-V族高效率太陽能電池的生長。它們提供與GaAs的小晶格不匹配(0.08%)以及幾乎沒有熱擴散不匹配。
本文中所揭示的方法容許形成具有具有結晶性之表面部分的鍺層，該鍺層接近使用相容於光伏打工業特徵之成本與體積限制之沈積技術的晶塊鍺層，譬如從包含鍺的靶濺鍍到結晶矽基板上。
濺鍍鍺層通常含有比晶塊鍺層更高的缺陷濃度。結晶矽基板與鍺結晶結構之間的晶格不匹配提供對此缺陷濃度的貢獻。此不匹配係大約鍺與矽之間的4.2%且導致貫穿式差排缺陷產生於Ge層中。
藉由將濺鍍鍺層暴露到雷射光，至少一部分的鍺層會融化。一般而言，將雷射光引導到鍺層的表面，且移動穿過鍺層，使得鍺層部分能夠熔化且以低濃度的缺陷「側向」再結晶。
結果，在表面上的結晶性與貫穿式差排缺陷密度變得相容於砷化鎵的生長以及因而多接面Ⅲ-V族高效率太陽能電池的形成。該方法有效率地產生「虛擬鍺」基板以用於Ⅲ-V族材料的生長。
雷射光的特性，譬如強度與波長，以及暴露時間，可受到控制以改良鍺層之熔化部分的形狀。例如，以使得在與基板之介面上的鍺部分不會熔化的方式，雷射光可受到控制。替代地，鍺層它的整個厚度可熔化，以提供較低濃度的缺陷。
將鍺層部份熔化的優點係為可防止矽擴散到鍺層內。理論上，此擴散可導致SiGe合金形成在鍺層的表面上，以增加介於鍺層與Ⅲ-V族材料之間的晶格不匹配。不過，申請人已經發現到，甚至藉由整個地熔化鍺層，僅僅一小部份矽則擴散於鍺層中而沒有明顯影響鍺層的性能，且 同時提供較低數量的缺陷。
現在參考圖1，顯示有流程圖10，其描繪根據實施例來製造半導體裝置所必要的基礎步驟。步驟12，提供一基板。步驟14，隨後將鍺層形成在基板上。步驟16，隨後將鍺層區域暴露到雷射光。最後，步驟18，將至少一半導體裝置形成在鍺層區域的表面部份上。
圖2顯示流程圖20，其描繪根據實施例來製造光伏打裝置所必要的步驟。在流程圖20，步驟21，提供結晶矽基板。步驟22，隨後將鍺層濺鍍到結晶矽基板上。在兩物質之間之晶格參數的差產生貫穿式差排缺陷於鍺層中。步驟24，隨後將矽基板與濺鍍鍺層加熱到介於400℃與700℃之間的溫度。步驟26，將具有光束能量密度介於80J/cm2與350J/cm2之間的LIMO連續波二極體雷射光束掃瞄於加熱鍺層的區域上。最後，步驟28，將多接面Ⅲ-V族太陽能電池形成在鍺層的暴露區域上。
圖3顯示包含矽晶基板32與濺鍍鍺層34的裝置30。裝置30被加熱到600℃且隨後暴露在來自LIMO連續波(CW)二極體雷射38的雷射光束36。雷射38具有線焦點光學，光束尺寸12mm×170μm FWHM以及波長808nm。單一雷射光束36的尺寸覆蓋鍺層從一邊到另一邊的寬度。替代地，可使用二極體雷射38陣列。雷射光束38以不同的速率在鍺層34上掃瞄多次。一般而言，掃瞄速率介於10mm/min與500mm/min之間，且鍺層的表面區域暴露到雷射光束，其總時間介於10ms與500ms之間。所使用的一般雷射光束能量密度介於80J/cm2與350J/cm2之間。在替代性實施例中，鍺層34可暴露於經過介質層(譬如，SiO2層)的雷射光束。介質層容許捕捉鍺層中的一部份雷射光，以減少熔化鍺材料所必要的功率量。以雷射光的波長為基礎來選擇介質層的厚度，以最佳化雷射光的捕捉。此外，較厚的介質層可協助鍺層的表面維持地更順。
鍺層34係藉由裝配有石英鹵素燈基板加熱器的AJAATC2200 RF磁控濺鍍系統所沈積。以5nm/min沈積速率、以1mT製程壓力，鍺係從4英吋的本質Ge靶被濺鍍(99.99%純度)。在沈積期間內，將每分鐘30圈的轉動施加到基板，以確保薄膜的均勻性。
圖4顯示根據實施例來製造之光伏打裝置40a與40b的示意圖式。裝置40a係為在根據實施例來形成之「虛擬鍺」基板上實行的多接面Ⅲ-V族太陽能電池。裝置40a包含矽晶基板32a，其係為n-型矽晶圓，以及雷射退火的鍺層34a。在沈積鍺層以前，使用RCA溶液來清潔矽基板32a，接著HF浸泡HF。鍺層34a被濺鍍，同時矽基板32a維持在300℃且具有300nm的厚度。將30nm厚的SiO2覆蓋層(沒顯示)沈積，以保護鍺層34a，同時將它從濺鍍機器轉移到另一個沈積機器。在將Ⅲ-V族太陽能電池形成於鍺層34a上以前，將SiO2覆蓋層化學性移除。
Ⅲ-V族太陽能電池包含底部低帶隙Ⅲ-V族太陽能電池45a、具有高於底部電池之帶隙的中間Ⅲ-V族太陽能電池46a、以及具有轉換高能量光子之高帶隙的頂部Ⅲ-V族太陽能電池47a。裝置40a亦包含傳導層48a與電性接點49a。
裝置40b係為包含矽同質接面底部電池的多接面Ⅲ-V族太陽能電池。在本實施例中，首先實行單一介面太陽能電池32b。後續，根據實施例將鍺層34b形成。該裝置進一步包含兩個Ⅲ-V族太陽能電池：具有帶隙高於矽太陽能電池32b的中間Ⅲ-V族太陽能電池46b、以及具有轉換高能量光子之高帶隙的頂部Ⅲ-V族太陽能電池47b。裝置40b亦包含傳導層48b與電性接點49b。用於裝置40b的鍺層34b比層34a更薄，因為它必須吸收最小數量的光子。
圖5與6顯示根據實施例之以雷射輻射處理之鍺層的TEM截 面影像。在圖5與6中的鍺層在雷射暴露期間內被部份地熔化。圖5(a)與5(c)係為鍺的亮場TEM圖，同時，圖5(b)與5(d)係為暗場TEM圖。圖5(a)與5(b)顯示在暴露到雷射光以前的鍺層，同時圖5(c)與5(d)顯示在暴露到具有劑量280J/cm2之雷射光以後的鍺層，其具有薄介質覆蓋層。圖5(a)與5(b)顯示在二極體雷射退火(52)以前的薄膜具有高貫穿式差排密度(其估計為大約1010cm-2)。在二極體雷射暴露步驟以後，具有非常低缺陷密度的頂部層57以及缺陷底部層58則可在圖5(c)與5(d)中被觀察。暴露鍺層的貫穿式差排密度則減少三數量級而到107cm-2。
在二極體雷射暴露期間內，高品質表面係關於鍺層的部份熔化。圖6(a)與6(b)描繪藉由改變掃瞄時間與雷射功率來控制鍺層34之熔化深度之連續波雷射的能力。圖6(a)顯示僅僅部份延伸入鍺層的區域內而沒有到達與矽基板之介面的熔化鍺深度。在一次雷射掃瞄以後，深度係為120nm(62)。圖6(b)顯示相同樣本在五次掃瞄以後導致180nm(66)熔化鍺層。
圖7(a)顯示根據實施例之以雷射輻射處理之鍺層的TEM截面影像。在圖7(a)中的鍺層在雷射暴露期間內被整個熔化。影像70顯示矽基板71以及在暴露到雷射光以前的200nm濺鍍鍺層72。影像73顯示矽基板74以及在暴露到具有劑量80J/cm2、經過150nm SiO2覆蓋層之雷射光以後的鍺層75。因為覆蓋層所產生的光捕捉，可得到完全熔化，儘管劑量較低。
從圖7(a)，明顯的是，鍺層75具有比鍺層72更低很多的缺陷濃度。特別是，鍺層72具有大約1010cm-2的差排密度；鍺層75具有大約106-107cm-2的差排密度。
圖7(b)顯示用於不同雷射劑量之暴露經過150nmSiO2覆蓋層之200nm濺鍍鍺層的標準化峰值溫度的圖76。
隨著雷射劑量增加，層的溫度首先線性增加且然後由於潛熱 的吸收而在熔化溫度上飽和。由於由覆蓋層所產生的光捕捉，完全的熔化可使用低劑量得到。
藉由整個熔化鍺層，來自基板的矽可在鍺層中擴散。這可導致SiGe合金形成在鍺層中的表面上，其可增加介於鍺層與Ⅲ-V族材料之間的晶格不匹配。
圖8顯示具有兩軌跡的拉曼圖80，該等軌跡具有用於在82以前與84以後、以劑量80J/cm2雷射退火之鍺層的SiGe拉曼峰值。在圖80中鋒值的相似性證明，甚至藉由整個熔化鍺層，僅僅一小部份矽能擴散於鍺層中。
現在參考圖9，顯示有發光二極體結構90的示意圖示。該二極體係藉由一連串Ⅲ-V族半導體層所形成，且可發出波長在範圍560nm至1100nm中的光線。Ⅲ-V族半導體層形成在根據實施例所形成的鍺層92上。鍺層92形成在矽基板93上，緩衝層94(其係由GaAs或GaInP製成)係形成在鍺層92上，且DBR(分散布拉格反射器)層95(其可反射從發光層96產生的光線)形成在緩衝層94上。
包含第一傳導型層97、發光層96、以及第二傳導型層98的發光結構形成在DBR層95上。
金屬接點99提供在第二傳導型層98上以及矽晶圓93的背側上，以施加電壓到LED裝置。94、95、97以及96的晶格常數相似鍺層92的晶格常數。
所屬技術領域中具有通常知識者將理解，可對在具體實施例中顯示的發明進行許多改變及/或改良，而不會脫離被廣泛說明的本發明精神或範圍。因此，本實施例在所有態樣中可被視為說明性而非限制性。
30‧‧‧裝置
32‧‧‧矽晶基板
34‧‧‧鍺層
36‧‧‧雷射光束
38‧‧‧二極體雷射

Claims (16)

  1. 一種製造半導體裝置的方法，其包含下列步驟：提供一基板；將一鍺層形成於該基板上，該鍺層具有晶格缺陷的一濃度；將一介質層沈積到該鍺層；其後將該鍺層的一區域暴露到經過該介質層的雷射光；其後移除該介質層；以及其後將至少一半導體裝置形成在該鍺層之該暴露區域的一表面部份上其包含在該形成的鍺層上生長包含Ⅲ-V族化合物材料之複數層；其中將該鍺層的該區域暴露到雷射光的該步驟包含：產生一連續波雷射光束且將該連續波雷射光束朝該鍺層之一第一邊緣引導及沿著該鍺層的長度由該第一邊緣到一第二邊緣側向移動該雷射光束。
  2. 如申請專利範圍第1項之方法，其中在施行該方法以後，在該鍺層中之晶格缺陷的該濃度小於107缺陷/cm2。
  3. 如申請專利範圍第1項之方法，其中實行將該鍺層之該區域暴露於雷射光的該步驟，以使得該鍺層之該區域的至少一部份在暴露期間內熔化。
  4. 如申請專利範圍第3項之方法，其中該熔化部份包含該表面部份。
  5. 如申請專利範圍第3項之方法，其中該鍺層與該基板形成一介面且該熔化部份從該表面部份延伸到該介面。
  6. 如申請專利範圍第3項之方法，其中該鍺層與該基板形成一介面且該熔化部份僅僅部份延伸入該鍺層的該區域內而沒有到達該介面。
  7. 如申請專利範圍第1項之方法，其中形成一鍺層的該步驟包含從包含鍺的一濺鍍靶將鍺濺鍍到該基板上的該步驟。
  8. 如申請專利範圍第1項之方法，其中以該雷射光的一波長為基礎，將該介質層的該厚度選出。
  9. 如申請專利範圍第1項之方法，其中該方法進一步包含將該雷射光束以介於10mm/min與1000mm/min之間的一速率沿著該鍺層從該第一邊緣移動到該第二邊緣之該步驟。
  10. 如申請專利範圍第1項之方法，其中暴露到該雷射光束之該鍺層的該部份暫時熔化，同時在該雷射光束自該部份移開以後，將該部份暴露到該雷射光束，且快速地再結晶。
  11. 如申請專利範圍第1項之方法，其中將該鍺層的該區域暴露到該雷射光束，其總時間介於10ms與500ms之間。
  12. 如申請專利範圍第1項之方法，其中該雷射光束能量密度介於80J/cm2與350J/cm2之間。
  13. 如申請專利範圍第1項之方法，其中該方法進一步包含在將該鍺層之一區域暴露到雷射光之期間內將該基板與該鍺層加熱到包含介於400℃與700℃之間的一溫度的該步驟。
  14. 如申請專利範圍第1項之方法，其中該基板係為具有一結晶定向的一矽晶晶圓。
  15. 如申請專利範圍第1項之方法，其中包含Ⅲ-V族化合物材料的該等複數層形成具有30%以上之一能量轉換效率的一多接面Ⅲ-V族太陽能電池。
  16. 如申請專利範圍第1項之方法，其中該連續波雷射光束於該鍺層上之掃描係以使得在該表面部份上之晶格缺陷的該濃度能夠減少的一方式來實行。
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TW201025423A (en) * 2008-10-02 2010-07-01 Sumitomo Chemical Co Semiconductor wafer, electronic device, and method for fabricating the semiconductor wafer
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TW201251086A (en) * 2010-12-15 2012-12-16 Newsouth Innovations Pty Ltd A method of forming a germanium layer on a silicon substrate and a photovoltaic device including a germanium layer

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