TWI697743B - Photoresist component concentration measuring device and concentration measuring method - Google Patents
Photoresist component concentration measuring device and concentration measuring method Download PDFInfo
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- TWI697743B TWI697743B TW105144149A TW105144149A TWI697743B TW I697743 B TWI697743 B TW I697743B TW 105144149 A TW105144149 A TW 105144149A TW 105144149 A TW105144149 A TW 105144149A TW I697743 B TWI697743 B TW I697743B
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Abstract
被循環使用的光阻劑剝離液時常隨著溶解光阻劑增加而變性,所以,在利用吸光度進行濃度測定時,有檢量線偏移的課題。 The recycled photoresist stripping solution often denatures as the dissolved photoresist increases. Therefore, when the absorbance is used for concentration measurement, there is a problem of calibration curve shift.
本發明為一種光阻劑成分濃度測定裝置,其特徵為:包括一測定手段,該測定手段可選定含有光阻劑但不含有光阻劑剝離原液的元素,並測定該被選定之特定元素在光阻劑剝離液中的濃度。 The present invention is a photoresist component concentration measuring device, which is characterized in that it includes a measuring means, which can select an element that contains a photoresist but does not contain the photoresist stripping stock solution, and measures the selected specific element in Concentration in photoresist stripping solution.
Description
本發明是關於一種光阻劑成分濃度測定裝置及濃度測定方法,其可測定使用於光微影技術的光阻劑剝離液中的光阻劑濃度。 The present invention relates to a photoresist component concentration measuring device and a concentration measuring method, which can measure the photoresist concentration in a photoresist stripper used in photolithography technology.
在積體電路(IC)、大型積體電路(LSI)等裝置中,隨著半導體元件的高積體化和晶片大小的縮小化,配線電路也朝向微細化及多層化發展。又,不僅是此種微小元件,在液晶螢幕等平板顯示器(FPD,Flat Panel Display)中,為了形成畫素,需要微小配線電路。為了製作此種微小配線電路,需要光微影技術。 In devices such as integrated circuits (IC) and large integrated circuits (LSI), with the increase in the integration of semiconductor elements and the shrinking of the size of wafers, wiring circuits are also developing towards miniaturization and multilayering. Furthermore, not only such tiny components, but also in flat panel displays (FPDs) such as liquid crystal screens, in order to form pixels, tiny wiring circuits are required. In order to make such a tiny wiring circuit, photolithography technology is required.
在光微影技術中,會形成用來製作配線電路的材料薄膜,並在此薄膜上塗布光阻劑。然後,使光阻劑被與配線對應的圖樣感光並去除後,蝕刻材料薄膜。最後再去除光阻劑。就正型光阻劑而言,為了去除已感光的光阻劑,會使用光阻劑剝離液。 In photolithography, a thin film of material used to make wiring circuits is formed, and photoresist is coated on the thin film. Then, after the photoresist is exposed to the pattern corresponding to the wiring and removed, the material film is etched. Finally, remove the photoresist. As for the positive photoresist, in order to remove the photosensitive photoresist, a photoresist stripper is used.
光阻劑剝離液可以某種程度反覆被使用,所以,光阻劑濃度會漸漸地升高。反覆使用光阻劑剝離液會產生經濟上的問題。又,當光阻劑濃度升高到某種程度時,停止使用會使製品產生品質上的問題。 The photoresist stripper can be used repeatedly to some extent, so the concentration of the photoresist will gradually increase. Repeated use of photoresist stripping solution can cause economic problems. Moreover, when the concentration of the photoresist increases to a certain level, stopping the use may cause quality problems in the product.
換言之,當光阻劑剝離液被使用到一半時,需要監視光阻劑濃度,一旦到達既定的濃度以上,就全部更換或更換一部分。 In other words, when the photoresist stripping solution is half used, it is necessary to monitor the photoresist concentration, and once it reaches a predetermined concentration or higher, replace all or part of it.
針對光阻劑剝離液中的光阻劑濃度的測定,有幾個方法可以考慮。在進行大量生產的工廠裡面,需要可在短時間內以某種程度的精度來決定光阻劑濃度的方法。 There are several methods to consider for the determination of the photoresist concentration in the photoresist stripping solution. In factories that perform mass production, a method that can determine the photoresist concentration with a certain degree of accuracy in a short time is required.
專利文獻1揭露一種從吸光度來求光阻劑剝離液中之光阻劑濃度的方法。在此方法中,利用光阻劑剝離液中的光阻劑濃度越是上升則吸光度越高的現象。換言之,事先求出已知光阻劑濃度所在的光阻劑剝離液的吸光度,將其作為檢量線,如此來決定光阻劑濃度。
但是,在根據吸光度來決定的濃度測定中,即使光阻劑濃度為固定,也會產生光阻劑剝離液中之吸光度與時間一起變化的課題。推測其原因為,溶解於光阻劑剝離液中的光阻劑慢慢分解為低分子,使得吸光光譜的峰值轉換為低波長那一側。 However, in the concentration measurement determined based on the absorbance, even if the photoresist concentration is fixed, there is a problem that the absorbance in the photoresist stripping solution changes with time. It is presumed that the reason is that the photoresist dissolved in the photoresist stripping solution is slowly decomposed into low molecules, so that the peak of the absorption spectrum is converted to the low wavelength side.
又,在根據吸光度來決定的濃度測定中,被測定物的溫度管理變得重要。 In addition, in concentration measurement determined based on absorbance, temperature management of the object to be measured becomes important.
在實際的製程中,會跨越數週,一邊補充光阻劑剝離液,一邊繼續生產。換言之,具有各種吸光光譜且已溶解的光阻劑的分解成分會混在光阻劑剝離液中。於是,可說在專利文獻1的方法中,難以測定出正確的光阻劑濃度。
In the actual manufacturing process, it will take several weeks to replenish the photoresist stripper while continuing production. In other words, the decomposition components of the photoresist that has various absorption spectra and have been dissolved will be mixed in the photoresist stripping liquid. Therefore, it can be said that in the method of
[專利文獻1] 日本特開平07-235487號公報 [Patent Document 1] JP 07-235487 A
專利文獻1為採用吸光度的方法。溶解於光阻劑剝離液中的光阻劑慢慢分解為低分子,吸光光譜的峰值轉換為低波長那側。結果,在光阻劑剝離液中,有具有各式各樣吸光光譜的光阻劑成分的分子混在其中。
結果,在採用吸光度的方法中,事先求出的檢量線無法與時間一起利用,缺乏正確性,無法正確把握溶解於光阻劑剝離液中的光阻劑濃度的課題。又,光阻劑剝離液的光阻劑成分的分解導致色味產生變化,濃度測定也產生了誤差的課題。 As a result, in the method using absorbance, the calibration curve obtained in advance cannot be used with time, lacks accuracy, and cannot accurately grasp the problem of the concentration of the photoresist dissolved in the photoresist stripping solution. In addition, the decomposition of the photoresist component of the photoresist peeling liquid causes a change in color and taste, and there is also a problem of error in concentration measurement.
本發明為解決此種習知之課題的發明,目的在提供一種光阻劑成分濃度測定裝置及光阻劑濃度測定方法,即使溶解於光阻劑剝離液中的光阻劑慢慢分解為低分子,本發明也可正確且以良好精度測定溶解於光阻劑剝離液中的光阻劑濃度。 The present invention is an invention that solves such a conventional problem, and aims to provide a photoresist component concentration measurement device and a photoresist concentration measurement method, even if the photoresist dissolved in the photoresist stripper is slowly decomposed into low molecules Therefore, the present invention can also accurately and accurately measure the concentration of the photoresist dissolved in the photoresist stripping solution.
另外,為了達成此目的,本發明之構造可選定含有於光阻劑但不含有於光阻劑剝離原液的元素,並測定該被選定之特定元素在光阻劑剝離液中的濃度,藉此,達成所期待的目的。 In addition, in order to achieve this objective, the structure of the present invention can select an element contained in the photoresist but not contained in the photoresist stripping stock solution, and measure the concentration of the selected specific element in the photoresist stripping solution, thereby , To achieve the desired purpose.
具體地說,選定硫為特定元素,又,更進一步具體地說,使用X射線螢光測定硫的量。又,更進一步具體地說,從X射線螢光的測定量算出光阻劑剝離液中的光阻劑成分濃度。 Specifically, sulfur is selected as the specific element, and more specifically, the amount of sulfur is measured using X-ray fluorescence. Furthermore, more specifically, the concentration of the photoresist component in the photoresist peeling solution is calculated from the measured amount of X-ray fluorescence.
本發明的構成為,在含有於光阻劑但不含有於光阻劑剝離原液的光阻劑剝離液中選定不會分解、或者不會變 化的成分,再測定此被選定的成分在光阻劑剝離液中的濃度。 The present invention is constituted by selecting a photoresist stripping solution that is contained in the photoresist but not contained in the photoresist stripping stock solution that will not decompose or change Then, determine the concentration of the selected component in the photoresist stripping solution.
藉由此構成,可正確且以良好精度測定溶解於光阻劑剝離液中的光阻劑,亦即光阻劑剝離液中的溶解光阻劑濃度。 With this configuration, the photoresist dissolved in the photoresist stripping liquid, that is, the concentration of the dissolved photoresist in the photoresist stripping liquid, can be measured accurately and with good accuracy.
作為被選定的特定成分,在光阻劑的感光材料成分含有硫磺但光阻劑剝離原液不含有硫磺的情況下,仍具有硫磺。 As the selected specific component, when the photosensitive material component of the photoresist contains sulfur but the photoresist stripping stock solution does not contain sulfur, it still contains sulfur.
作為被選定的特定成分,在光阻劑含有但不含有於光阻劑剝離原液的光阻劑剝離液中可不分解,可為元素或化學物質,或化學成分。 As the selected specific component, it may not be decomposed in the photoresist stripping solution that contains but is not contained in the photoresist stripping stock solution, and can be an element, a chemical substance, or a chemical component.
根據本發明,本發明之構造可選定含有於光阻劑但不含有於光阻劑剝離原液的元素,並測定該被選定的特定元素在光阻劑剝離液中的濃度。 According to the present invention, the structure of the present invention can select an element contained in the photoresist but not contained in the photoresist stripping stock solution, and measure the concentration of the selected specific element in the photoresist stripping solution.
藉此,可提供一種光阻劑成分濃度測定裝置及濃度測定方法,其可正確且以良好精度測定作為光阻劑剝離液中之光阻劑濃度的溶解於光阻劑剝離液中之光阻劑濃度,亦即,溶解光阻劑濃度。 Thereby, it is possible to provide a photoresist component concentration measuring device and a concentration measuring method, which can accurately and accurately measure the photoresist dissolved in the photoresist stripping liquid as the photoresist concentration in the photoresist stripping liquid The concentration of the agent, that is, the concentration of the dissolved photoresist.
又,即使光阻劑剝離液的光阻劑成分的分解導致色味產生變化,濃度測定也不會產生誤差。 In addition, even if the photoresist component of the photoresist peeling liquid is decomposed and the color and taste are changed, there is no error in the concentration measurement.
10:光阻劑成分濃度測定裝置 10: Device for measuring the concentration of photoresist components
12:拉出配管 12: Pull out the pipe
12a:泵浦 12a: pump
12i:吸入口 12i: suction port
14:測定部 14: Measurement Department
18:返回配管 18: Return to piping
18o:排出口 18o: discharge outlet
20:X射線螢光測定裝置 20: X-ray fluorescence measurement device
20a:檢出部 20a: Inspection Department
24:透過配管 24: Through piping
30:控制器 30: Controller
30a:顯示器 30a: display
30b:傳訊線 30b: Communication line
50:光阻劑剝離裝置 50: Photoresist stripping device
52:光阻劑剝離液槽 52: Photoresist stripping liquid tank
54:輸送帶 54: Conveyor belt
56:沖淋裝置 56: Shower device
60:被處理物 60: Object to be processed
56a:泵浦 56a: pump
56b:淋浴配管 56b: Shower piping
56c:過濾器 56c: filter
M:光阻劑剝離液 M: Photoresist stripper
第1圖表示安裝有本發明之光阻劑成分濃度測定裝置的光阻劑剝離裝置的構造。 Figure 1 shows the structure of a photoresist peeling device equipped with the photoresist component concentration measuring device of the present invention.
第2圖表示光阻劑成分濃度測定裝置的構造。 Figure 2 shows the structure of the photoresist component concentration measuring device.
第3圖表示以X射線螢光測量光阻劑剝離液中之硫磺濃度的實驗結果。 Figure 3 shows the experimental results of measuring the sulfur concentration in the photoresist stripping solution by X-ray fluorescence.
以下將使用圖面說明本發明之光阻劑成分濃度測定裝置。此外,以下的說明為本發明係例示本發明的其中一實施型態,本發明不受以下的說明限定。在不脫離本發明之主旨的範圍內,可自由改變本發明。 Hereinafter, the photoresist component concentration measuring device of the present invention will be explained using figures. In addition, the following description is an example of one embodiment of the present invention, and the present invention is not limited by the following description. The present invention can be changed freely within the scope not departing from the gist of the present invention.
在第1圖中,表示安裝有本實施型態之光阻劑成分濃度測定裝置的光阻劑剝離裝置50的構造。光阻劑剝離裝置50具有光阻劑剝離液槽52、用來搬送被處理物60的輸送帶54、對被處理物60散布光阻劑剝離液M的沖淋裝置56及光阻劑成分濃度測定裝置10。
Fig. 1 shows the structure of the
光阻劑剝離裝置50以下面的方式來動作。被處理物60被載置於輸送帶54上也被移送。然後,在光阻劑剝離液槽52上散布光阻劑剝離液M,於是光阻劑被剝離。光阻劑剝離液M被循環使用。
The
在含有於光阻劑但不含有於光阻劑剝離原液的光阻劑剝離液中選定不會分解、或者不會變化的成分。作為此被選定的特定成分,在光阻劑含有但不含有於光阻劑剝離原液的光阻劑剝離液中可不分解、或者可不變化,可為元素或化學物質,或化學成分。此外,在此所謂光阻劑剝離原液,是指調製後且未使用的光阻劑剝離液。 In the photoresist stripping solution that is contained in the photoresist but not contained in the photoresist stripping stock solution, a component that does not decompose or change is selected. The selected specific component may not be decomposed or changed in the photoresist stripping liquid containing the photoresist but not contained in the photoresist stripping stock solution, and may be an element, a chemical substance, or a chemical component. In addition, the photoresist stripping stock solution here refers to a photoresist stripping solution that has not been used after preparation.
例如,在光阻劑含有感光劑的 NQD(naphthoquinone diazidosulfonic ester,萘醌二疊氮磺酸酯)與高分子樹脂的酚醛清漆樹脂(novolac resin)的情況下,光阻劑為硫磺或含有硫磺之物。 For example, in the photoresist containing photosensitizer In the case of a novolac resin of NQD (naphthoquinone diazidosulfonic ester) and a polymer resin, the photoresist is sulfur or a substance containing sulfur.
例如,當光阻劑剝離原液作為MEA(monoethanolamine,單乙醇胺)與BDG(diethylene glycol monobutyl ether,二甘醇單丁醚)及水的組合時,光阻劑剝離原液不含有硫磺,亦即不含有硫元素之物。 For example, when the photoresist stripping stock solution is used as a combination of MEA (monoethanolamine), BDG (diethylene glycol monobutyl ether, diethylene glycol monobutyl ether) and water, the photoresist stripping stock solution does not contain sulfur, that is, it does not contain Sulfur.
含有於光阻劑但不含有於光阻劑剝離原液的成分或元素若選定硫元素,含有硫的成分即使因為在光阻劑剝離液中分解等作用而產生變化,硫元素本身並不會變化。 If sulfur is selected as the component or element contained in the photoresist but not in the photoresist stripping stock solution, even if the sulfur component changes due to decomposition in the photoresist stripping solution, the sulfur itself will not change .
於是,藉由測定被選定作為特定元素的硫元素在光阻劑剝離液中的濃度,可算出作為光阻劑剝離液中之光阻劑濃度的溶解於光阻劑剝離液中之光阻劑濃度,亦即,溶解光阻劑濃度,同時可正確且以良好精度測定溶解於光阻劑剝離液中的光阻劑濃度。 Therefore, by measuring the concentration of sulfur element selected as a specific element in the photoresist stripping solution, the photoresist dissolved in the photoresist stripping solution can be calculated as the concentration of the photoresist in the photoresist stripping solution The concentration, that is, the concentration of the dissolved photoresist, and the concentration of the photoresist dissolved in the photoresist stripping solution can be accurately and accurately measured.
被循環使用的光阻劑剝離液M貯留在光阻劑剝離液槽52中,藉由泵浦56a透過沖淋裝置配管56b,被送至沖淋裝置56。此外,沖淋裝置配管56b包括過濾器56c為佳。這樣,可以防止其因光阻劑的固態成分等而阻塞。
The circulated photoresist stripping liquid M is stored in the photoresist stripping
然後,在剝離被處理物60的光阻劑之後,返回光阻劑剝離液槽52。如此,光阻劑剝離液M可被循環利用。光阻劑剝離液M中的光阻劑在被剝離後便溶解於光阻劑剝離液M中。
Then, after peeling off the photoresist of the to-
藉此,光阻劑剝離液槽52內所溶解的光阻劑的
濃度會隨著時間增加。於是,就光阻劑剝離液槽52中的光阻劑剝離液M而言,當已溶解的溶解光阻劑一到達既定濃度,一部分或全部會和作為光阻劑剝離原液的新液交換。
Thereby, the photoresist dissolved in the photoresist stripping
本發明之光阻劑成分濃度測定裝置10從光阻劑剝離液槽52取出光阻劑剝離液M,測定作為已溶解之光阻劑中之特定元素的硫的量,然後再度返回光阻劑剝離液槽52。
The photoresist component
此外,符號12i為光阻劑剝離液M的吸入口,符號18o為已溶解之光阻劑中之硫量被測定之後的光阻劑剝離液M返回光阻劑剝離液槽52的排出口。
In addition, the
此外,雖未圖示,但硫的量被測定之後的光阻劑剝離液M亦可不返回光阻劑剝離液槽52而被排到系統外。
In addition, although not shown, the photoresist stripping liquid M after the amount of sulfur is measured may not be returned to the photoresist stripping
在第2圖中,表示光阻劑成分濃度測定裝置10的構造。光阻劑成分濃度測定裝置10具有連通到光阻劑剝離液槽52內部的拉出配管12、用來測定通過上述拉出配管12與上述拉出配管內部之光阻劑剝離液M的測定部14、使光阻劑剝離液M返回上述光阻劑剝離液槽52的返回配管18。
In FIG. 2, the structure of the photoresist component
再者,又具有作為測定手段的X射線螢光測定裝置20,其用來測定作為上述測定部14內之上述光阻劑剝離液M中的被選定之特定元素的硫的量,同時也具有作為算出手段的控制器30,其從上述X射線螢光測定裝置20的硫量測定值算出上述光阻劑剝離液M中的光阻劑成分濃度。
Furthermore, there is an X-ray
拉出配管12從光阻劑剝離液槽52取出光阻劑剝離液M的一部分。又,在拉出配管12上,設有用來移送光阻劑剝離液M的泵浦12a。泵浦12a藉由設置於下流側的測定
部14將拉出配管12中的壓力調節至光阻劑剝離液M可以無障礙進行處理的壓力。
The pipe 12 is pulled out to take out a part of the photoresist stripping liquid M from the photoresist stripping
作為測定手段的測定部14為了使X射線螢光測定裝置20可測定光阻劑剝離液M中的硫的量,亦即,測定硫量,連續設置於拉出配管12上。在第2圖中,表示出連續設置於拉出配管12的部分。為了使來自X射線螢光測定裝置20的X射線照射光阻劑剝離液M,測定部14採用可透過X射線的材料。
The measuring
作為測定手段的測定部14的型態沒有特別限定。例如,有一種型態為,將從X射線螢光觀看可透過X射線的樹脂管線作為測定部14並連通至拉出配管12,從拉出配管12貯留光阻劑剝離液M一次的測定容器連續設置於拉出配管12上。
The type of the measuring
在本實施型態中,將說明在連通至拉出配管12且通過X射線的配管(之後稱為「透過配管」)24構成測定部14的情況。
In this embodiment, a case will be described in which a pipe (hereinafter referred to as "transmissive pipe") 24 that communicates with the pull-out pipe 12 and passes through X-rays constitutes the
在此構造中,測定流過透過配管24的光阻劑剝離液M中的硫量。透過配管24在光阻劑剝離液中難以劣化,並且,採用可透過X射線螢光的材料。作為其中一例,材料可使用氟樹脂、聚酯、聚丙烯等,只要是用X射線螢光測定硫磺時可透過X射線螢光的材質即可。
In this structure, the amount of sulfur in the photoresist stripping liquid M flowing through the
又,亦可不將所有的透過配管24以可透過X射線的材料來形成。亦即,只將被照射X射線,產生X射線螢光的部分作為透過配管24,其他部分可為不鏽鋼之類的金屬配
管。又,可以僅有拉出配管12的一部分作為透過X射線的配管材料。
In addition, it is not necessary to form all the
此外,可於測定容器一次接受從拉出配管12得來的光阻劑剝離液M,就測定容器內的光阻劑剝離液來測定硫量。 In addition, it is possible to receive the photoresist stripping liquid M from the pull-out pipe 12 once in the measurement container, and then measure the amount of sulfur by measuring the photoresist stripping liquid in the container.
在透過配管24上連通有返回配管18。於是,藉由泵浦12a,從光阻劑剝離液槽52吸上來的光阻劑剝離液M通過拉出配管12,在透過配管24內流動,透過返回配管18內部返回光阻劑剝離液槽52。
A
作為測定手段的X射線螢光測定裝置20測定光阻劑剝離液M中作為被選定之特定元素的硫(S)。正型光阻劑以感光劑的NQD(萘醌二疊氮磺酸酯)和酚醛清漆樹脂構成。
The X-ray
已感光的NQD在酒精的存在下變成茚羧酸,溶解於鹼性溶液中。於是,酚醛清漆樹脂之間的結合被切斷,已感光的光阻劑在鹼性溶液中被剝離且被溶解。 The photosensitive NQD becomes indene carboxylic acid in the presence of alcohol and is dissolved in an alkaline solution. As a result, the bond between the novolak resin is severed, and the photosensitive resist is peeled off and dissolved in the alkaline solution.
光阻劑剝離液M由作為光阻劑剝離液M之原液的新液、已溶解的酚醛清漆樹脂及包含溶解後構造改變之物且已溶解的NQD所構成。已溶解的酚醛清漆樹脂及包含溶解後構造改變之物且已溶解的NQD稱為光阻劑成分。光阻劑成分為已溶解的溶解光阻劑。 The photoresist stripping liquid M is composed of a new liquid that is the original liquid of the photoresist stripping liquid M, dissolved novolac resin, and dissolved NQD including the structure changed after the dissolution. The dissolved novolac resin and the dissolved NQD that contains the structural change after dissolution are called photoresist components. The photoresist component is a dissolved photoresist that has been dissolved.
這些光阻劑成分,亦即,溶解光阻劑,全都不是單一型態,也包含大的凝固成分、溶解並分解成酚醛清漆樹脂之基本構造的成分。 These photoresist components, that is, the dissolved photoresist, are not in a single form, but also include large solidified components, and components that dissolve and decompose into the basic structure of novolac resin.
另外,光阻劑剝離液M越是循環,就越會新增 新的光阻劑成分。又,經過的時間越長,做為已溶解之溶解光阻劑的光阻劑成分會開始分解而產生變化。 In addition, the more the photoresist stripper M is circulated, the more new New photoresist composition. In addition, the longer the elapsed time, the photoresist component that is the dissolved photoresist will begin to decompose and change.
但是,存在於NQD的硫的量不會變化。於是,藉由測定光阻劑剝離液M中的硫的量,可穩定測定光阻劑剝離液M中的光阻劑成分的濃度,亦即,已溶解的溶解光阻劑濃度。 However, the amount of sulfur present in NQD does not change. Therefore, by measuring the amount of sulfur in the photoresist stripping liquid M, the concentration of the photoresist component in the photoresist stripping liquid M, that is, the concentration of the dissolved photoresist that has been dissolved, can be stably measured.
此外,在此,所謂硫的量亦即硫量,可測量硫磺的X射線的強度。換言之,所謂硫量,是指硫磺的特性X射線的強度(kcps)。 In addition, here, the so-called amount of sulfur, that is, the amount of sulfur, can measure the intensity of sulfur X-rays. In other words, the so-called sulfur content refers to the characteristic X-ray intensity (kcps) of sulfur.
如上所述,本發明之光阻劑成分濃度測定裝置是將光阻劑成分中的硫磺作為光阻劑成分的濃度亦即已溶解之光阻劑濃度的指標。於是,若光阻劑剝離液中的成分含有硫酸基,則無法正確測量光阻劑成分的濃度。 As described above, the photoresist component concentration measuring device of the present invention uses sulfur in the photoresist component as an indicator of the concentration of the photoresist component, that is, the dissolved photoresist concentration. Therefore, if the component in the photoresist stripping solution contains a sulfuric acid group, the concentration of the photoresist component cannot be accurately measured.
雖已作了說明,關於光阻劑剝離液,大多會廢棄或排出使用完畢的光阻劑剝離液的一部分,剩下會補充作為光阻劑剝離原液的新液或再生液之後使用。 Although it has been explained, most of the photoresist stripping liquid is discarded or discharged part of the used photoresist stripping liquid, and the rest is used after replenishing a new liquid or regenerated liquid as the photoresist stripping stock solution.
當光阻劑剝離原液含有硫磺時,當下的硫量並無來自光阻劑成分或來自光阻劑剝離液本身的區別。 When the photoresist stripping stock solution contains sulfur, the current amount of sulfur does not come from the photoresist component or the photoresist stripping solution itself.
於是,本發明之光阻劑成分濃度測定裝置10可使用於只有以光阻劑剝離液中沒有硫元素的材料來構成的場合。
Therefore, the photoresist component
選定含有於光阻劑但光阻劑剝離原液不含有的元素,測定該被選定的特定元素在光阻劑剝離液中的濃度。 An element contained in the photoresist but not contained in the photoresist stripping stock solution is selected, and the concentration of the selected specific element in the photoresist stripping solution is measured.
藉此,元素本身在光阻劑剝離液中不會分解或 不會變化,所以,即使溶解於光阻劑剝離液中的溶解光阻劑分解,也可正確求出溶解於光阻劑剝離液中的溶解光阻劑濃度。 In this way, the element itself will not decompose or decompose in the photoresist stripper. There is no change, so even if the dissolved photoresist dissolved in the photoresist stripping solution is decomposed, the concentration of the dissolved photoresist dissolved in the photoresist stripping solution can be accurately determined.
X射線螢光測定裝置20的檢出部20a在第2圖中表示X射線照射部與受光部合為一體的構造。但,照射部與受光部也可分別各自構成。
The
X射線螢光測定裝置20所測定的光阻劑剝離液M中的硫量,為了換算成濃度,可包括控制器30。控制器30從透過配管24中的光阻劑剝離液M的流量與X射線螢光測定裝置20所測定出的硫磺測定量,算出光阻劑剝離液M中的光阻劑成分濃度,並將其顯示於顯示器30a上。
The amount of sulfur in the photoresist stripping liquid M measured by the X-ray
又,可如下算出光阻劑成分濃度。首先,光阻劑成分濃度所決定的校正液在透過配管24中以既定的流量來流動。然後,使用X射線螢光測定裝置20來對其進行測量。
In addition, the photoresist component concentration can be calculated as follows. First, the correction liquid determined by the concentration of the photoresist component flows through the
藉由此測量,求出光阻劑成分濃度相對於所測出之硫量的檢量線。根據此檢量線,可算出光阻劑剝離液M中的光阻劑成分濃度。 By this measurement, the calibration curve of the photoresist component concentration relative to the measured sulfur amount is obtained. Based on this calibration curve, the concentration of the photoresist component in the photoresist stripping liquid M can be calculated.
控制器30也可具有傳訊線30b,該傳訊線30b當光阻劑成分濃度達到一定值時,會傳送訊號到其他機器。這是因為,光阻劑剝離液M的光阻劑成分濃度達到一定值時,需要更換光阻劑剝離液槽52中的全部或一部分光阻劑剝離液M。
The
在此針對具有以上之構造的光阻劑成分濃度測定裝置10的動作說明。光阻劑剝離液M通過拉出配管12被移送至光阻劑成分濃度測定裝置10(參照第1圖)。
Here, the operation of the photoresist component
藉由泵浦12a調整拉出配管12內的內壓,光阻劑剝離液M被送至透過配管24。通過透過配管24的光阻劑剝離液M通過返回配管18,回到光阻劑剝離液槽52。
The internal pressure in the drawing pipe 12 is adjusted by the
X射線螢光測定裝置20在控制器30的指示下,測定流過透過配管24中的光阻劑剝離液M中的硫的量。然後,測定值被通知給控制器30。
The X-ray
控制器30使用預先準備的檢量線,算出光阻劑剝離液M中的硫磺濃度。於是,進行此種動作的控制器30可稱為算出手段。所算出的硫磺濃度被顯示於顯示器30a。又,作為送去其他機器的訊號被傳送(30b)。
The
如上所述,本發明之光阻劑成分濃度測定裝置10,根據光阻劑剝離液原液不含有但溶解光阻劑含有的例如光阻劑中的硫磺原子,測定光阻劑剝離液M中的光阻劑成分濃度,所以,即使光阻劑剝離液M中的溶解光阻劑成分分解,隨著時間變化,或者色味也產生變化,仍可進行正確的濃度測定。
As described above, the photoresist component
【實施例】 [Example]
以下表示使用X射線螢光測定裝置測定光阻劑成分的實驗結果。作為分析裝置,使用Rigaku Corporation製的掃描型X射線螢光分析裝置(ZSX Primus II)。 The following shows the results of an experiment using an X-ray fluorescence measuring device to measure the components of the photoresist. As the analysis device, a scanning X-ray fluorescence analysis device (ZSX Primus II) manufactured by Rigaku Corporation was used.
光阻劑剝離液使用MEA(monoethanolamine,單乙醇胺)19%、BDG(diethylene glycol monobutyl ether,二甘醇單丁醚)60%、水21%的組成物。任何一種材料都不含有硫元素。 The photoresist stripping liquid uses a composition of 19% MEA (monoethanolamine), 60% BDG (diethylene glycol monobutyl ether), and 21% water. No material contains sulfur.
作為樣本的光阻劑成分,在使用酚醛清漆樹脂 的正型光阻劑感光後,使用變成乾燥或粉末的物質。將硫作為特定元素。 As the photoresist component of the sample, novolac resin is used After the positive photoresist is exposed to light, the substance that becomes dry or powder is used. Sulfur is used as a specific element.
<實驗方法> <Experimental method>
針對光阻劑剝離液,溶解作為樣本的光阻劑成分(粉末),製作出0.1、0.3、0.6、1.0wt%的模擬光阻劑剝離液。然後,使用上述分析裝置測定各個模擬光阻劑剝離液中就只有硫磺的X射線(K α射線)強度。結果如第3圖所示。 Regarding the photoresist stripping solution, the photoresist component (powder) as the sample was dissolved to produce a simulated photoresist stripping solution of 0.1, 0.3, 0.6, 1.0 wt%. Then, the X-ray (Ka-ray) intensity of only sulfur in each simulated photoresist stripping liquid was measured using the aforementioned analysis device. The result is shown in Figure 3.
在第3圖中,橫軸為作為溶解光阻劑之濃度的光阻劑成分之濃度(被表示為PR添加濃度[wt%]),縱軸為X射線螢光的強度(被表示為「X射線強度(kcps)」)。 In Figure 3, the horizontal axis is the concentration of the photoresist component that is the concentration of the dissolved photoresist (expressed as PR addition concentration [wt%]), and the vertical axis is the intensity of X-ray fluorescence (expressed as " X-ray intensity (kcps)”).
參照第3圖,相對於剝離液之光阻劑添加濃度與來自硫磺(S)的X射線強度從0.1wt%以下的低濃度到1.0wt%的高濃度,在廣大的範圍內有高度正相關。又,若相同的樣本放置一星期之後再測定,不會看見變化。 Referring to Fig. 3, the concentration of photoresist added to the stripping solution and the X-ray intensity from sulfur (S) are highly positively correlated in a wide range from a low concentration of less than 0.1wt% to a high concentration of 1.0wt% . Also, if the same sample is left for a week and then measured, no change will be seen.
此圖表為使用X射線螢光測定光阻劑成分之預濃度,亦即已溶解之溶解光阻劑之濃度為已知之光阻劑剝離液之硫的量的結果。此可作為算出手段的檢量線。 This chart is the result of using X-ray fluorescence to determine the pre-concentration of the photoresist components, that is, the concentration of the dissolved photoresist is the amount of sulfur in the known photoresist stripping solution. This can be used as a calibration curve for calculation.
在使用X射線螢光測定光阻劑成分之濃度,亦即已溶解之溶解光阻劑之濃度為未知的光阻劑剝離液的硫的量時,可從X射線強度反向求出光阻劑成分的濃度。 When using X-ray fluorescence to determine the concentration of photoresist components, that is, the concentration of dissolved photoresist that has been dissolved is the amount of sulfur in the photoresist stripping solution, the photoresist can be obtained from the X-ray intensity. The concentration of the ingredients.
此亦可算出濃度。此外,檢量線可以不是如第3圖所示的圖表,其亦可為由數值資料所組成的表格。 This can also calculate the concentration. In addition, the calibration curve may not be the graph shown in Fig. 3, but may be a table composed of numerical data.
【產業上可利性】 【Industrial Profitability】
本發明之光阻劑成分濃度測定裝置可應用於進 行採用光刻技術之微細加工時的光阻劑剝離製程。 The photoresist component concentration measuring device of the present invention can be applied to The photoresist stripping process during microfabrication using photolithography technology.
10‧‧‧光阻劑成分濃度測定裝置 10‧‧‧Resist composition concentration measuring device
12i‧‧‧吸入口 12i‧‧‧Suction port
18o‧‧‧排出口 18o‧‧‧Exhaust outlet
50‧‧‧光阻劑剝離裝置 50‧‧‧Photoresist stripping device
52‧‧‧光阻劑剝離液槽 52‧‧‧Photoresist stripper tank
54‧‧‧輸送帶 54‧‧‧Conveyor belt
56‧‧‧沖淋裝置 56‧‧‧Water shower
56a‧‧‧泵浦 56a‧‧‧Pump
56b‧‧‧淋浴配管 56b‧‧‧Shower Piping
56c‧‧‧過濾器 56c‧‧‧Filter
60‧‧‧被處理物 60‧‧‧Processed objects
M‧‧‧光阻劑剝離液 M‧‧‧Resist stripper
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JP2005191030A (en) * | 2003-12-24 | 2005-07-14 | Sharp Corp | Apparatus and method of removing resist |
JP2015162659A (en) * | 2014-02-28 | 2015-09-07 | 芝浦メカトロニクス株式会社 | Processing device and processing method |
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JP2017135204A (en) | 2017-08-03 |
CN108604534A (en) | 2018-09-28 |
JP6643710B2 (en) | 2020-02-12 |
CN108604534B (en) | 2022-06-21 |
TW201736987A (en) | 2017-10-16 |
WO2017130620A1 (en) | 2017-08-03 |
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