TWI697392B - Surface treatment liquid and optical film - Google Patents
Surface treatment liquid and optical film Download PDFInfo
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- TWI697392B TWI697392B TW108103262A TW108103262A TWI697392B TW I697392 B TWI697392 B TW I697392B TW 108103262 A TW108103262 A TW 108103262A TW 108103262 A TW108103262 A TW 108103262A TW I697392 B TWI697392 B TW I697392B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/08—Means for treating work or cutting member to facilitate cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/08—Means for treating work or cutting member to facilitate cutting
- B26D7/088—Means for treating work or cutting member to facilitate cutting by cleaning or lubricating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F1/00—Perforating; Punching; Cutting-out; Stamping-out; Apparatus therefor
- B26F1/38—Cutting-out; Stamping-out
Abstract
Description
本發明是有關於一種表面處理液及光學膜,且特別是有關於一種具有離子性化合物的表面處理液及光學膜。 The present invention relates to a surface treatment liquid and an optical film, and particularly relates to a surface treatment liquid and an optical film with ionic compounds.
在裁切光學捲膜時,光學捲膜的成分會沾附在裁切刀具上。此些沾附成分在下次裁切時會殘留在光學捲膜的裁切面,而對裁切面造成汙染。因此,亟需提出一種能改善光學捲膜的成分沾附在裁切刀具的技術。 When cutting the optical film, the components of the optical film will adhere to the cutting tool. These adhering components will remain on the cutting surface of the optical roll film during the next cutting, and cause pollution to the cutting surface. Therefore, there is an urgent need to propose a technology that can improve the adhesion of the components of the optical film to the cutting tool.
因此,本發明提出一種表面處理液及光學膜,可改善習知問題。 Therefore, the present invention provides a surface treatment liquid and optical film, which can improve the conventional problems.
本發明一實施例提出一種表面處理液。表面處理液包括溶劑及表面處理劑。表面處理劑為具有有機陽離子並且熔點為25℃以上且50℃以下之離子性化合物。 An embodiment of the present invention provides a surface treatment liquid. The surface treatment liquid includes a solvent and a surface treatment agent. The surface treatment agent is an ionic compound having an organic cation and having a melting point of 25°C or more and 50°C or less.
本發明另一實施例提出一種光學膜。光學膜包括一膜體及一前述表面處理液。表面處理液形成於膜體之表面。 Another embodiment of the present invention provides an optical film. The optical film includes a film body and the aforementioned surface treatment liquid. The surface treatment liquid is formed on the surface of the film body.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to have a better understanding of the above-mentioned and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:
10:光學捲膜 10: Optical roll film
10’:成分 10’: Ingredients
10a:光學膜片 10a: Optical film
10b:下表面 10b: lower surface
10s:裁切面 10s: cut surface
10u:上表面 10u: upper surface
11:第一保護層 11: The first protective layer
12:第一覆蓋層 12: The first covering layer
13:偏光層 13: Polarizing layer
14:第二覆蓋層 14: second covering layer
15:黏膠層 15: Adhesive layer
15s:黏膠面 15s: Adhesive surface
16:第二保護層 16: second protective layer
100:裁切設備 100: Cutting equipment
110:傳輸輪 110: Transmission wheel
120:承靠輪 120: Support Wheel
130、230:裁切刀具 130, 230: cutting tools
130s:表面 130s: surface
140:容器 140: container
150:表面處理元件 150: Surface treatment components
231:刀體 231: Knife Body
232:粗糙化結構 232: rough structure
231s:刀面 231s: knife surface
232r:凹部 232r: recess
A1:虛線 A1: dotted line
C1:表面處理液 C1: Surface treatment liquid
D1、D2:轉動方向 D1, D2: rotation direction
L1:清潔長度 L1: cleaning length
L2:進入深度 L2: Enter the depth
L3:裁切厚度 L3: Cutting thickness
P1:裁切處 P1: Cutting area
T1:接觸區 T1: contact area
T11、T12:切線方向 T11, T12: Tangent direction
W1:內徑 W1: inner diameter
第1~2圖繪示依照本發明一實施例之裁切設備的示意圖。 Figures 1 to 2 show schematic diagrams of a cutting device according to an embodiment of the invention.
第3圖繪示第1圖之裁切刀具切斷光學捲膜的示意圖。 Fig. 3 shows a schematic diagram of the cutting tool of Fig. 1 cutting the optical film.
第4圖繪示依照本發明另一實施例之裁切刀具的剖視圖。 Figure 4 is a cross-sectional view of a cutting tool according to another embodiment of the present invention.
第5圖繪示依據本發明一實施例之光學膜片的裁切面附著有表面處理液的示意圖。 FIG. 5 is a schematic diagram showing the surface treatment liquid adhered to the cut surface of the optical film according to an embodiment of the present invention.
請參照第1~3圖,第1~2圖繪示依照本發明一實施例之裁切設備100的示意圖,而第3圖繪示第1圖之裁切刀具130切斷光學捲膜10的示意圖。
Please refer to Figures 1 to 3. Figures 1 to 2 illustrate a schematic diagram of a
如第1圖所示,裁切設備100用以裁切光學捲膜10。裁切設備100包括至少一傳輸輪110、承靠輪120、至少一裁切刀具130、至少一容器140及一表面處理元件150。數個傳輸輪110用以傳輸光學捲膜10,光學捲膜10可被夾持於及傳輸於此些傳輸輪110之其中二者之間。
As shown in FIG. 1, the
雖然圖未繪示,然裁切設備100可更包含一控制模組,此控制模組可控制傳輸輪110、承靠輪120、裁切刀具130及表面處理元件150的運轉。例如,控制模組可包含控制器及驅動器,其中控制器例如是由半導體製程製成的電路,而驅動器例如是馬達。馬達電性連接傳輸輪110、承靠輪120、裁切刀具130及表面處理元件150,
使控制器可控制馬達驅動此些元件轉動,例如是控制此些元件的轉速。
Although not shown in the figure, the
傳輸輪110可傳輸光學捲膜10通過裁切刀具130與承靠輪120之間。承靠輪120與裁切刀具130相對配置。裁切刀具130用以裁切光學捲膜10。承靠輪120可做為光學捲膜10的承靠,讓裁切刀具130能切斷光學捲膜10。
The
如第1及2圖所示,容器140用以容納表面處理液C1,表面處理液C1可清潔及/或塗佈裁切刀具130,以去除裁切刀具130上的雜質。此外,表面處理液C1也可塗佈於裁切刀具130之表面130s,進而避免或減少此些雜質在下次裁切時殘留在光學捲膜10的裁切面上或裁切刀具130之表面上。本發明實施例不限於表面處理液C1必須同時具備清潔及塗佈(或塗層)功能,在另一實施例中,表面處理液C1可具備清潔與塗佈功能之一者。
As shown in FIGS. 1 and 2, the
在一實施例中,如第1圖所示,光學捲膜10包括第一保護層11、第一覆蓋層12、偏光層13、第二覆蓋層14、黏膠層15及第二保護層16。偏光層13形成於第一覆蓋層12與第二覆蓋層14之間。第一保護層11設置於第一覆蓋層12上。黏膠層15設置於第二覆蓋層14與第二保護層16之間,用以於後續黏合至一液晶面板(圖未示)之上。在一實施例中,本發明實施例之光學捲膜10可為單層膜或為多層膜。例如,光學捲膜10可包含前述數個層結構之至少一層。
In one embodiment, as shown in Figure 1, the
第一覆蓋層12及第二覆蓋層14的材料可選自於由三醋酸纖維素(Triacetate Cellulose,TAC)、聚甲基丙烯酸甲酯
(Polymethylmethacrylate,PMMA)、聚乙烯對苯二甲酸酯(Polyethylene Terephthalate,PET)、聚丙稀(Polypropylene,PP)、環烯烴聚合物(Cyclo Olefin Polymer,COP)、聚碳酸酯(Polycarbonate,PC)或上述之任意組合所組成的一族群。
The material of the
偏光層13可為吸附配向之二色性色素之聚乙烯醇(polyvinyl alcohol,PVA)薄膜或由液晶材料摻附具吸收染料分子所形成。聚乙烯醇可藉由皂化聚乙酸乙烯酯而形成。在一些實施例中,聚乙酸乙烯酯可為乙酸乙烯酯之單聚物或乙酸乙烯酯及其它單體之共聚物等。上述其它單體可為不飽和羧酸類、烯烴類、不飽和磺酸類或乙烯基醚類等。在另一些實施例中,聚乙烯醇可為經改質的聚乙烯醇,例如,經醛類改質的聚乙烯甲醛、聚乙烯乙醛或聚乙烯丁醛等。
The
第一保護層11可由聚酯樹脂、烯烴樹脂、乙酸纖維素樹脂、聚碳酸酯樹脂、丙烯酸樹脂、聚對苯二甲酸丁二酯(polyethylene terephthalate,PET)、聚乙烯(polyethylene,PE)或聚丙烯(Polypropylene,PP)、環烯烴樹脂或上述之組合,其中聚酯樹脂例如是聚對苯二甲酸乙二酯或聚萘二甲酸乙二酯,而丙烯酸樹脂例如是聚甲基丙烯酸甲酯(PMMA)。
The first
黏膠層15可由例如是(甲基)丙烯酸共聚物之材料製成,例如是可包含但不限於官能基的材料,如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯等材料。
The
第二保護層16例如是離型層,其可例如是表面塗有離
型劑的聚對苯二甲酸乙二醇酯薄膜,其中離型劑例如是但不限於矽樹脂。如此,第二保護層16容易自黏膠層15上撕除,以露出黏膠層15,使裁切後的光學捲膜10透過黏膠層15黏合至液晶面板(圖未示)。
The second
在一實施例中,光學捲膜10可選擇性地包含不聚光的成分,例如是環烯烴聚合物(Cyclo Olefin Polymer,COP)。此種不聚光的成分會導致雷射光無法聚焦,而造成無法一次切斷光學捲膜10。反觀本發明實施例,如第3圖所示,採用裁切刀具130可一次切斷光學捲膜10,不受光學捲膜10材質的影響。在另一實施例中,在裁切刀具130裁切光學捲膜10前,可先使用雷射光裁切光學捲膜10的部分厚度,然後再由裁切刀具130切斷光學捲膜10。在此實施例中,發射雷射光的雷射產生器可設置在裁切刀具130的上游,如第1圖的虛線A1處。此外,雷射產生器的數量可與裁切刀具130的數量相等。
In an embodiment, the
在裁切刀具130裁切光學捲膜10時,光學捲膜10的層結構的成分10’(例如是黏膠層15的成分)會沾附在裁切刀具130上,導致在後續裁切光學捲膜10時,沾附在裁切刀具130的成分10’殘留在光學捲膜10的裁切面10s(裁切面10s繪示在第3圖)上。
When the
在本實施例中,表面處理液C1內包含一離型劑。當裁切刀具130接觸表面處理液C1時,離型劑會塗佈沾附在裁切刀具130上。離型劑可減少成分10’對裁切刀具130的沾附性,進而減少成分10’沾附在裁切刀具130的數量。此外,表面處理液C1的的材質包含一矽氧烷聚合物,例如為矽利康(Silicone),及/或表面處理液C1可更包含一含氟化合物。
In this embodiment, the surface treatment liquid C1 contains a release agent. When the
如第1及2圖所示,表面處理元件150與裁切刀具130係直接接觸。在裁切刀具130轉動時,表面處理元件150可擦拭裁切刀具130,以強制性去除(如擦拭)沾附在裁切刀具130上的成分10’。被去除的成分10’轉移至表面處理元件150上,轉移到表面處理元件150的成分10’透過表面處理元件150的轉動被帶入容器140內的表面處理液C1中,以減少表面處理元件150’上的成分10’數量。換言之,透過表面處理元件150的轉動可產生對表面處理元件150’的清潔及/或塗佈效果。當溶入表面處理液C1內的成分10’數量會愈來愈多,可更換表面處理液C1。
As shown in FIGS. 1 and 2, the
在另一實施例中,裁切設備100更包括一過濾模組(未繪示),其連接容器140,可將容器140內的表面處理液C1往外輸出至一過濾器,在過濾器濾除成分10’後,再將過濾後(淨化後)的表面處理液C1回送至容器140內。如此,可不需更換容器140內的表面處理液C1,或減少容器140內的表面處理液C1之更換頻率。
In another embodiment, the
在一實施例中,如第1圖所示,表面處理元件150的轉動方向D1與裁切刀具130的轉動方向D2係反向。例如,表面處理元件150的轉動方向D1為逆時針,而裁切刀具130的轉動方向D2為順時針。在另一實施例中,表面處理元件150的轉動方向D1可為順時針,而裁切刀具130的轉動方向D2可為逆時針。如此,在表面處理元件150與裁切刀具130的接觸區T1,表面處理元件150的切線方向T11與裁切刀具130的切線方向T12同向,可減少表面處理元件150過度摩擦裁切刀具130,進而減少裁切刀具130的磨損(相較於此,當
表面處理元件150的切線方向T11與裁切刀具130的切線方向T12反向時,表面處理元件150與裁切刀具130的磨損會增加)。
In one embodiment, as shown in FIG. 1, the rotation direction D1 of the
此外,表面處理元件150的轉速與裁切刀具130的轉速係相異。例如,表面處理元件150的轉速慢於裁切刀具130的轉速,此速差可增加表面處理元件150與裁切刀具130的相對移動量,以去除沾附在裁切刀具130上的成分10’。在一實施例中,表面處理元件150的轉速與裁切刀具130的轉速的比值介於0.5與2之間,此比值範圍足以去除沾附在裁切刀具130上的成分10’,且又不至於造成裁切刀具130或表面處理元件150的過度磨損。
In addition, the rotation speed of the
此外,表面處理元件150的轉速愈慢,表面處理元件150清潔及/或塗佈裁切刀具130的效果愈差;表面處理元件150的轉速愈快,表面處理元件150將表面處理液C1甩至裁切刀具130的機會愈大或量愈多。
In addition, the slower the rotation speed of the
如第1圖所示,表面處理元件150部分進入表面處理液C1內,使表面處理元件150在轉動時可沾附到表面處理液C1,進而使表面處理元件150在轉動時表面處理液C1能經常性清潔及/或塗佈裁切刀具130。在一實施例中,表面處理元件150例如是海綿,其可吸收表面處理液C1,並將吸收的表面處理液C1透過毛細現象傳輸至裁切刀具130,讓更多的表面處理液C1清潔及/或塗佈裁切刀具130。在此設計下,表面處理元件150可選擇性地不轉動,透過海綿吸收表面處理液C1能可清潔及/或塗佈裁切刀具130。在另一實施例中,表面處理元件150可以是其它種類材質,如橡膠或塑膠。
As shown in Figure 1, the
此外,如第2圖所示,由於表面處理元件150具有軟質性及/或彈性,使表面處理元件150與裁切刀具130緊密接觸。如此,可增強表面處理元件150去除殘留在裁切刀具130上的成分10’的效果。
In addition, as shown in FIG. 2, since the
如第2圖所示,裁切刀具130以清潔長度L1與表面處理元件150接觸,表面處理元件150以進入深度L2進入表面處理液C1內,進入深度L2至少等於清潔長度L1,使通過容器140內的表面處理液C1的表面處理元件150吸收足夠的表面處理液C1去清潔裁切刀具130的清潔長度L1的部分。如第1及3圖所示,清潔長度L1大致上等於或大於裁切厚度L3,使得經過光學捲膜10的整個裁切面10s的裁切刀具130的部分(即清潔長度L1的部分)受過清潔及/或塗佈,進而減少或甚至避免殘留在裁切面10s上的成分10’的數量。
As shown in Figure 2, the
在一實施例中,如第1圖所示,裁切刀具130與光學捲膜10的裁切處P1位於容器140的上方。如此,因為裁切所產生的成分10’的顆粒全部或大部份都能掉落在容器140內,以避免成分10’的顆粒汙染到裁切設備100的所處環境。如第2圖所示,容器140的數量與裁切刀具130相等。在另一實施例中,容器140的數量可以是一個,裁切設備100的全部裁切刀具130可位於容器140的正上方,可達到類似前述的技術效果。
In one embodiment, as shown in FIG. 1, the cutting position P1 of the
本發明一實施例的裁切方法包括以下步驟。首先,提供前述裁切設備100。然後,裁切設備100之裁切刀具130裁切光學捲膜10。然後,裁切設備100之表面處理液C1清潔及/或塗佈裁切刀具
130。
The cutting method of an embodiment of the present invention includes the following steps. First, the
請參照第4圖,其繪示依照本發明另一實施例之裁切刀具230的剖視圖。前述實施例之裁切設備100的裁切刀具130也可以本實施例之裁切刀具230取代。
Please refer to FIG. 4, which shows a cross-sectional view of a
裁切刀具230包括刀體231及粗糙化結構232。刀體231具有刀面231s,而粗糙化結構232形成於刀面231s。粗糙化結構232包括數個凹部232r。
The
刀體231與粗糙化結構232可以是一體成形結構。以製造方法來說,可採用例如是噴砂、水刀、雷射或其它合適技術形成於刀體231之刀面231s上,所形成的凹部232r的範圍即構成粗糙化結構232。以凹部尺寸來說,就噴砂而言,所形成的粗糙化結構232之凹部232r的內徑W1大致是介於5微米與80微米之間,較佳可介於10微米與50微米之間。然凹部232r的內徑W1的實際範圍可視製程而定,其也可以小於5微米,或大於80微米,本發明實施例不加以限定。
The
如第4圖所示,本發明實施例的粗糙化結構232可將刀具與光學捲膜10的接觸模式由面接觸轉變成點接觸,可降低裁切刀具230裁切光學捲膜10的摩擦阻力。此外,如第4圖所示,表面處理液C1附著於粗糙化結構232上,例如位於粗糙化結構232之凹部232r內,因此能增加刀具230與光學捲膜10之間的液體潤滑性,更降低裁切刀具230裁切光學捲膜10的摩擦阻力。
As shown in Figure 4, the roughened
請參照第5圖,其繪示依據本發明一實施例之光學膜片
10a的裁切面10s附著有表面處理液C1的示意圖。
Please refer to Figure 5, which illustrates an optical film according to an embodiment of the present invention
A schematic diagram of the surface treatment liquid C1 attached to the
裁切刀具230裁斷光學捲膜10,以裁切出光學膜片10a。由於裁切刀具230之數個凹部232r容納有表面處理液C1,因此在裁切後,表面處理液C1可附著在光學膜片10a的裁切面10s的至少一部分上。由於裁切刀具230經過光學膜片10a的整個厚度,因此裁切面10s包含第一保護層11、第一覆蓋層12、偏光層13、第二覆蓋層14、黏膠層15及第二保護層16的裁切面。表面處理液C1附著在光學膜片10a的裁切面10s的範圍由粗糙化結構232的範圍及/或表面處理液C1附著在粗糙化結構232上的範圍而定。
The
在本實施例中,第4及5圖之表面處理液C1為抗靜電液。第1圖之裁切設備100的表面處理液C1可以本實施例之抗靜電液取代。抗靜電液例如是包含溶劑及表面處理劑,其中溶劑包含酒精及水,而表面處理劑例如是抗靜電劑。在一實施例中,以溶劑例如包含酒精與水為100%來說,抗靜電劑的重量百分比約為溶劑的0.1~5%,可達到優良的抗靜電效果。以溶劑為100%來說,在一實施例中,酒精及水的比例可介於1:1~3:7,且以3:7的組成具有更優良的抗靜電效果(相較於前者而言)。
In this embodiment, the surface treatment liquid C1 in Figures 4 and 5 is an antistatic liquid. The surface treatment liquid C1 of the
以表面處理劑來說,其例如是為具有有機陽離子並且熔點為25℃以上且50℃以下之離子性化合物。藉由使用熔點為25℃以上之離子性化合物、即於室溫下為固體之離子性化合物,可抑制防靜電性能之經時變化,換言之,可長期保持防靜電性能。就防靜電性能之長期穩定性之觀點而言,離子性化合物更佳為具有30℃以上、或35 ℃以上之熔點者。 In the case of a surface treatment agent, it is, for example, an ionic compound having an organic cation and having a melting point of 25°C or more and 50°C or less. By using an ionic compound with a melting point of 25°C or higher, that is, an ionic compound that is solid at room temperature, the change in antistatic performance over time can be suppressed, in other words, the antistatic performance can be maintained for a long time. From the viewpoint of the long-term stability of antistatic performance, the ionic compound is more preferably 30℃ or higher, or 35℃ Melting point above ℃.
作為構成離子性化合物之陽離子成分,例如可列舉:咪唑鎓陽離子、吡啶鎓陽離子、銨陽離子、鋶陽離子、鏻陽離子等。此些離子中,於用於本發明實施例之表面處理液之溶劑的情況時,就於沾附於刀具上或光學膜片上時不易帶電之觀點而言,較佳為吡啶鎓陽離子或咪唑鎓陽離子。 Examples of the cationic components constituting the ionic compound include imidazolium cations, pyridinium cations, ammonium cations, sulfonium cations, and phosphonium cations. Among these ions, when used in the solvent of the surface treatment solution of the embodiment of the present invention, from the viewpoint that they are not easily charged when attached to a tool or an optical film, pyridinium cation or imidazole is preferred. Onium cation.
另一方面,於離子性化合物中,成為上述陽離子成分之對離子之陰離子成分可為無機之陰離子,亦可為有機之陰離子,例如可列舉如下者:氯陰離子[Cl-]、溴陰離子[Br-]、碘陰離子[I-]、四氯鋁酸鹽陰離子[AlCl4 -]、七氯二鋁酸鹽陰離子[Al2Cl7 -]、四氟硼酸鹽陰離子[BF4 -]、六氟磷酸鹽陰離子[PF6 -]、過氯酸鹽陰離子[ClO4 -]、硝酸鹽陰離子[NO3 -]、乙酸鹽陰離子[CH3COO-]、三氟乙酸鹽陰離子[CF3COO-]、氟磺酸鹽陰離子[FSO3 -]、甲磺酸鹽陰離子[CH3SO3 -]、三氟甲磺酸鹽陰離子[CF3SO3 -]、對甲苯磺酸鹽陰離子[p-CH3C6H4SO3 -]、雙(氟磺醯基)醯亞胺陰離子[(FSO2)2N-]、雙(三氟甲磺醯基)醯亞胺陰離子[(CF3SO2)2N-]、三(三氟甲磺醯基)甲基化陰離子[(CF3SO2)3C-]、六氟砷酸鹽陰離子[AsF6 -]、六氟銻酸鹽陰離子[SbF6 -]、六氟鈮酸鹽陰離子[NbF6 -]、六氟鉭酸鹽陰離子[TaF6 -]、二甲基亞膦酸鹽陰離子[(CH3)2POO-]、(聚)氟化氫氟陰離子[F(HF)n -](n為1~3左右)、二氰胺陰離子[(CN)2N-]、硫氰酸鹽陰離子[SCN-]、全氟丁磺酸鹽陰離子[C4F9SO3 -]、雙(五氟乙磺醯基)醯亞胺陰離子[(C2F5SO2)2N-]、全氟丁酸鹽陰離子[C3F7COO-]、(三氟甲磺醯基)(三氟甲烷羰基)醯亞胺陰離子 [(CF3SO2)(CF3CO)N-]等。 On the other hand, in the ionic compound, to become the above-described anion component may be an anionic inorganic ions, the cation may also be an organic anion of the component, for example, by the following: chlorine anions [Cl -], bromine anion [Br -], iodide anion [the I -], tetrachloroaluminate anion [AlCl 4 -], heptachlorodialuminate anion [Al 2 Cl 7 -], tetrafluoroborate anion [BF 4 -], hexafluoro phosphate anions [PF 6 -], perchlorate anion [ClO 4 -], nitrate anion [NO 3 -], acetate anion [CH 3 COO -], trifluoroacetate anion [CF 3 COO -] , fluorosulfonate anion [FSO 3 -], methanesulfonate anion [CH 3 SO 3 -], trifluoromethanesulfonate anion [CF 3 SO 3 -], p-toluenesulfonate anion [p-CH 3 C 6 H 4 SO 3 - ], bis (sulfo-fluoro-acyl) acyl imide anion [(FSO 2) 2 N - ], bis (trifluoromethanesulfonyl acyl) acyl imide anion [(CF 3 SO 2 ) 2 N -], tris (trifluoromethanesulfonyl acyl) methide anion [(CF 3 SO 2) 3 C -], hexafluoroarsenate anion [AsF 6 -], hexafluoroantimonate anion [ SbF 6 -], hexafluoro niobate anions [NbF 6 -], six tantalum fluoride anions [TaF 6 -], dimethylsilylene phosphonate anion [(CH 3) 2 POO - ], ( poly) hydrogen fluoride fluoride anion [F (HF) n -] (n is about 1 to 3), dicyanamide anion [(CN) 2 N -] , thiocyanate anion [SCN -], perfluorobutanesulfonate anion [C 4 F 9 SO 3 - ], bis (pentafluoroethane sulfonyl acyl) acyl imide anion [(C 2 F 5 SO 2 ) 2 N -], perfluoro butyrate anion [C 3 F 7 COO - ], (trifluoromethanesulfonyl acyl) (trifluoromethane-carbonyl) acyl imide anion [(CF 3 SO 2) ( CF 3 CO) N -] and the like.
在此些陰離子中,尤其是包含氟原子之陰離子成分提供防靜電性能優異之離子性化合物,故而可較佳地使用,尤佳為六氟磷酸鹽陰離子、雙(氟磺醯基)醯亞胺陰離子及雙(三氟甲磺醯基)醯亞胺陰離子。 Among these anions, especially the anion components containing fluorine atoms provide ionic compounds with excellent antistatic properties, so they can be preferably used, especially hexafluorophosphate anions, bis(fluorosulfonyl)imide Anion and bis(trifluoromethanesulfonyl)imide anion.
本發明實施例所使用之離子性化合物之具體例可自上述陽離子成分與陰離子成分的組合中適當地選擇。作為具體之陽離子成分與陰離子成分之組合的化合物,可列舉如下者。 Specific examples of the ionic compound used in the examples of the present invention can be appropriately selected from the combination of the above-mentioned cationic components and anionic components. Specific examples of the compound combining a cationic component and an anionic component include the following.
‧吡啶鎓鹽:N-己基吡啶鎓六氟磷酸鹽、N-辛基吡啶鎓六氟磷酸鹽、N-甲基-4-己基吡啶鎓六氟磷酸鹽、N-丁基-4-甲基吡啶鎓六氟磷酸鹽、N-辛基-4-甲基吡啶鎓六氟磷酸鹽、N-己基吡啶鎓雙(氟磺醯基)醯亞胺、N-辛基吡啶鎓雙(氟磺醯基)醯亞胺、N-甲基-4-己基吡啶鎓雙(氟磺醯基)醯亞胺、N-丁基-4-甲基吡啶鎓雙(氟磺醯基)醯亞胺、N-辛基-4-甲基吡啶鎓雙(氟磺醯基)醯亞胺、N-己基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-辛基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-甲基-4-己基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-丁基-4-甲基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-辛基-4-甲基吡啶鎓雙(三氟甲磺醯基)醯亞胺、N-己基吡啶鎓對甲苯磺酸鹽、N-辛基吡啶鎓對甲苯磺酸鹽、N-甲基-4-己基吡啶鎓對甲苯磺酸鹽、N-丁基-4-甲基吡啶鎓對甲苯磺酸鹽、N-辛基-4-甲基吡啶鎓對甲苯磺酸鹽等。 ‧Pyridinium salt: N-hexylpyridinium hexafluorophosphate, N-octylpyridinium hexafluorophosphate, N-methyl-4-hexylpyridinium hexafluorophosphate, N-butyl-4-methyl Pyridinium hexafluorophosphate, N-octyl-4-methylpyridinium hexafluorophosphate, N-hexylpyridinium bis(fluorosulfonyl) imide, N-octylpyridinium bis(fluorosulfonyl) Group) imine, N-methyl-4-hexylpyridinium bis(fluorosulfonyl) imide, N-butyl-4-methylpyridinium bis(fluorosulfonyl) imide, N -Octyl-4-methylpyridinium bis(fluorosulfonyl)imide, N-hexylpyridinium bis(trifluoromethanesulfonyl)imide, N-octylpyridinium bis(trifluoromethyl) Sulfonyl)imidine, N-methyl-4-hexylpyridinium bis(trifluoromethanesulfonyl)imidine, N-butyl-4-methylpyridinium bis(trifluoromethanesulfonyl) )Imidine, N-octyl-4-methylpyridinium bis(trifluoromethanesulfonyl)imidine, N-hexylpyridinium p-toluenesulfonate, N-octylpyridinium p-toluenesulfonic acid Salt, N-methyl-4-hexylpyridinium p-toluenesulfonate, N-butyl-4-methylpyridinium p-toluenesulfonate, N-octyl-4-methylpyridinium p-toluenesulfonic acid Salt etc.
‧咪唑鎓鹽:1-乙基-3-甲基咪唑鎓六氟磷酸鹽、1-乙基-3-甲基咪唑鎓雙(氟磺醯基)醯亞胺、1-乙基-3-甲基咪唑鎓雙(三氟甲磺 醯基)醯亞胺、1-乙基-3-甲基咪唑鎓對甲苯磺酸鹽、1-丁基-3-甲基咪唑鎓甲磺酸鹽等。 ‧Imidazolium salt: 1-ethyl-3-methylimidazolium hexafluorophosphate, 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide, 1-ethyl-3- Methylimidazolium bis(trifluoromethanesulfon) (Amino) imide, 1-ethyl-3-methylimidazolium p-toluenesulfonate, 1-butyl-3-methylimidazolium methanesulfonate, and the like.
‧吡咯烷鎓鹽:N-丁基-N-甲基吡咯烷鎓六氟磷酸鹽、N-丁基-N-甲基吡咯烷鎓雙(氟磺醯基)醯亞胺、N-丁基-N-甲基吡咯烷鎓雙(三氟甲磺醯基)醯亞胺、N-丁基-N-甲基吡咯烷鎓對甲苯磺酸鹽等。 ‧Pyrrolidinium salt: N-butyl-N-methylpyrrolidinium hexafluorophosphate, N-butyl-N-methylpyrrolidinium bis(fluorosulfonyl)imide, N-butyl -N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide, N-butyl-N-methylpyrrolidinium p-toluenesulfonate, etc.
‧銨鹽:四丁基銨六氟磷酸鹽、四丁基銨雙(氟磺醯基)醯亞胺、四己基銨雙(氟磺醯基)醯亞胺、三辛基甲基銨雙(氟磺醯基)醯亞胺、(2-羥基乙基)三甲基銨雙(氟磺醯基)醯亞胺、四丁基銨雙(三氟甲磺醯基)醯亞胺、四己基銨雙(三氟甲磺醯基)醯亞胺、三辛基甲基銨雙(三氟甲磺醯基)醯亞胺、(2-羥基乙基)三甲基銨雙(三氟甲磺醯基)醯亞胺、四丁基銨對甲苯磺酸鹽、四己基銨對甲苯磺酸鹽、三辛基甲基銨對甲苯磺酸鹽、(2-羥基乙基)三甲基銨對甲苯磺酸鹽、(2-羥基乙基)三甲基銨二甲基亞膦酸鹽等。 ‧Ammonia salt: tetrabutylammonium hexafluorophosphate, tetrabutylammonium bis(fluorosulfonyl) imide, tetrahexylammonium bis(fluorosulfonyl) imide, trioctyl methyl ammonium bis( Fluorosulfonyl) imide, (2-hydroxyethyl) trimethylammonium bis(fluorosulfonyl) imide, tetrabutylammonium bis(trifluoromethanesulfonyl) imide, tetrahexyl Ammonium bis(trifluoromethanesulfonyl)imide, trioctylmethylammonium bis(trifluoromethanesulfonyl)imide, (2-hydroxyethyl)trimethylammonium bis(trifluoromethanesulfon) Amino) iminium, tetrabutylammonium p-toluenesulfonate, tetrahexylammonium p-toluenesulfonate, trioctylmethylammonium p-toluenesulfonate, (2-hydroxyethyl)trimethylammonium p-toluenesulfonate Toluenesulfonate, (2-hydroxyethyl)trimethylammonium dimethylphosphonite, etc.
該等離子性化合物可分別單獨使用,或組合兩種以上而使用。 This ionic compound can be used individually or in combination of 2 or more types, respectively.
此外,在一實施例中,本發明的離子性化合物可為一吡啶鎓陽離子,化合物的結構式(1)如下:
結構式(1)的吡啶鎓鹽(塩)的陽離子例如是N-烷基吡啶鎓陽離子。結構式(1)的R3表示具有12-16個碳原子的 直鏈烷基。結構式(1)的陽離子例如是N-十二烷基吡啶離子(N- )、N-十三烷基吡啶離子(N- )、N-十四烷基吡啶離子(N- )、N-十五烷基吡啶離子(N- )、N-十六烷基吡啶離子(N- )、N-十二烷基-4-甲基吡啶離子(N--4- )、N-十三烷基-4-甲基吡啶離子(N--4-)、N-十四烷基-4-甲基吡啶離子(N- -4-)、N-十五烷基-4-甲基吡啶鎓離子(N--4-)或N-十六烷基-4-甲基吡啶鎓離子(N--4- )。 The pyridinium salt of structural formula (1) ( The cation of (塩) is, for example, N-alkylpyridinium cation. R 3 in the structural formula (1) represents a straight-chain alkyl group having 12-16 carbon atoms. The cation of structural formula (1) is, for example, N-dodecylpyridinium (N- ), N-tridecylpyridinium ion (N- ), N-tetradecylpyridinium ion (N- ), N-pentadecylpyridinium ion (N- ), N-hexadecylpyridinium ion (N- ), N-dodecyl-4-methylpyridinium ion (N- -4- ), N-tridecyl-4-methylpyridinium ion (N- -4- ), N-tetradecyl-4-methylpyridinium ion (N- -4- ), N-pentadecyl-4-methylpyridinium ion (N- -4- ) Or N-hexadecyl-4-methylpyridinium ion (N- -4- ).
結構式(1)的R4表示氫原子或甲基,X-表示具有氟原子的離子。X-在吡啶鎓鹽中利如是氟離子(素)、四氟硼酸根離子()、六氟磷酸根離子( )、三氟乙酸根離子( )、三氟甲磺酸根離子( )、雙(氟磺酰基)亞胺離子(( ))、雙(三氟甲磺酰基)酰亞胺離子(( ))、三(三氟甲磺酰基)甲烷離子(())、六氟砷酸根離子()、六氟銻酸根 離子()、六氟鈮酸鹽離子( )、六氟鉭酸鹽離子( )、(聚)氫氟氟離子(() )、全氟丁烷磺酸鹽離子( )、雙(五氟乙磺酰基)酰亞胺離子(( ))、全氟丁酸離子( )或(三氟甲磺酰基)(三氟甲烷羰基)酰亞胺離子(()( ))。 In the structural formula (1), R4 represents a hydrogen atom or a methyl group, and X- represents an ion having a fluorine atom. X- is like fluoride ion in pyridinium salt ( Prime ), tetrafluoroborate ion ( ), hexafluorophosphate ion ( ), trifluoroacetate ion ( ), trifluoromethanesulfonate ion ( ), bis(fluorosulfonyl)imide ion ( ( ) ), bis(trifluoromethanesulfonyl)imide ion ( ( ) ), tris(trifluoromethanesulfonyl)methane ion ( ( ) ), hexafluoroarsenate ion ( ), hexafluoroantimonate ion ( ), hexafluoroniobate ion ( ), hexafluorotantalate ion ( ), (poly)hydrofluoride fluoride ion (( ) ), perfluorobutane sulfonate ion ( ), bis(pentafluoroethanesulfonyl)imide ion ( ( ) ), perfluorobutyric acid ion ( ) Or (trifluoromethanesulfonyl)(trifluoromethanecarbonyl)imide ion (( )( ) ).
由於構成式的吡啶鎓鹽的陰離子成分X-為具有氟原子的離子,因此能得到抗靜電性能優異的離子性化合物。具體來說,該陰離子例如是:氟離子[F-](素)、四氟硼酸根離子[BF4 -]( )、六氟磷酸根離子[PF6 -]( )、三氟乙酸根離子[CF3COO-]( )、三氟甲磺酸根離子[CF3SO3 -]( )、雙(氟磺酰基)酰亞胺離子[(FSO2)2N-]( ())、雙(三氟甲磺酰基)酰亞胺離子[(CF3SO2)2N-](() )、三(三氟甲磺酰基)甲烷離子[(CF3SO2)3C-](())、六氟砷酸根離子[AsF6 -]()、六氟銻酸根離子[SbF6 -]()、六氟鈮酸根離子 [NbF6 -]()、六氟鉭酸鹽離子[TaF6 -]()、(聚)氫氟氟酸離子[F(HF)n -](n約為1至3)(() )、全氟丁烷磺酸根離子[C4F9SO3 -]( )、雙(五氟乙磺酰基)酰亞胺離子[(C2F5SO2)2N-]( ())、全氟丁酸離子[C3F7COO-]()、(三氟甲磺酰基)(三氟甲烷羰基)酰亞胺離子[(CF3SO2)(CF3CO)N-](( )() )等。 Since the anion component X - of the pyridinium salt of the structural formula is an ion having a fluorine atom, an ionic compound having excellent antistatic performance can be obtained. Specifically, the anion is, for example: fluoride ion [F -] ( Prime ), tetrafluoroborate ion [BF 4 - ]( ), Hexafluorophosphate ion [PF 6 -] ( ), trifluoroacetate ion [CF 3 COO - ]( ), Triflate ions [CF 3 SO 3 -] ( ), bis(fluorosulfonyl)imide ion [(FSO 2 ) 2 N - ]( ( ) ), bis(trifluoromethanesulfonyl)imide ion [(CF 3 SO 2 ) 2 N - ]( ( ) ), tris(trifluoromethanesulfonyl)methane ion [(CF 3 SO 2 ) 3 C - ]( ( ) ), hexafluoroarsenate ion [AsF 6 - ]( ), hexafluoroantimonate ion [SbF 6 - ]( ), hexafluoroniobate ion [NbF 6 - ]( ), hexafluorotantalate ion [TaF 6 - ]( ), (Poly) fluoro hydrofluoric acid ion [F (HF) n -] (n is about 1 to 3) (( ) ), Perfluoro butane sulfonate ion [C 4 F 9 SO 3 - ] ( ), bis(pentafluoroethanesulfonyl)imide ion [(C 2 F 5 SO 2 ) 2 N - ]( ( ) ), Perfluorinated acid ion [C 3 F 7 COO -] ( ), (trifluoromethanesulfonyl)(trifluoromethanecarbonyl)imide ion [(CF 3 SO 2 )(CF 3 CO)N - ](( )( ) )Wait.
用於本發明實施例的吡啶鎓鹽的具體實例可以適當地選自前述陽離子與陰離子的組合。作為陽離子和陰離子組成的化合物的具體實例如是:N-十二烷基吡啶六氟磷酸鹽(N- )、N-十四烷基吡啶六氟磷酸鹽(N-)、N-十六烷基吡啶六氟磷酸鹽(N- )、N-十二烷基-4-甲基吡啶六氟磷酸鹽(N--4-)、N-十四烷基-4-甲基吡啶六氟磷酸鹽(N--4- )、N-十六烷基-4-甲基吡啶六氟磷酸鹽(N--4- )、N-十二烷基吡啶雙(氟磺酰基)酰亞胺(N- ())、N-十四烷基吡啶雙(氟磺酰基)酰亞胺(N-())、N-十六烷基吡啶雙(氟磺酰基)酰亞胺(N-())、N-十二烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N- -4-())、N-十四烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N--4-())、N-十六烷基-4-甲基吡啶雙(氟磺酰基)酰亞胺(N--4-())、N-十二烷基吡啶雙(三氟甲磺酰基)酰亞胺(N- ())、N-十四烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-( ))、N-十六烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-( ))、N-十二烷基-4-甲基吡啶雙(三氟甲磺酰基)酰亞胺(N--4-( ))、N-十四烷基-4-甲基吡啶鎓雙(三氟甲磺酰基)酰亞胺(N--4- ())、N-十六烷基-4-甲基吡啶鎓雙(三氟甲磺酰基)酰亞胺(N--4- ())等等。 吡啶鎓鹽為N-十二烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-( ))的結構式例如是:。 Specific examples of the pyridinium salt used in the embodiment of the present invention may be appropriately selected from the combination of the aforementioned cation and anion. A specific example of a compound composed of cations and anions is: N-dodecylpyridine hexafluorophosphate (N- ), N-tetradecylpyridine hexafluorophosphate (N- ), N-hexadecylpyridine hexafluorophosphate (N- ), N-dodecyl-4-methylpyridine hexafluorophosphate (N- -4- ), N-tetradecyl-4-methylpyridine hexafluorophosphate (N- -4- ), N-hexadecyl-4-methylpyridine hexafluorophosphate (N- -4- ), N-dodecylpyridine bis(fluorosulfonyl)imide (N- ( ) ), N-tetradecylpyridine bis(fluorosulfonyl)imide (N- ( ) ), N-hexadecylpyridine bis(fluorosulfonyl)imide (N- ( ) ), N-dodecyl-4-methylpyridine bis(fluorosulfonyl)imide (N- -4- ( ) ), N-tetradecyl-4-methylpyridine bis(fluorosulfonyl)imide (N- -4- ( ) ), N-hexadecyl-4-methylpyridine bis(fluorosulfonyl)imide (N- -4- ( ) ), N-dodecylpyridine bis(trifluoromethanesulfonyl)imide (N- ( ) ), N-tetradecylpyridine bis(trifluoromethanesulfonyl)imide (N- ( ) ), N-hexadecylpyridine bis(trifluoromethanesulfonyl)imide (N- ( ) ), N-dodecyl-4-methylpyridine bis(trifluoromethanesulfonyl)imide (N- -4- ( ) ), N-tetradecyl-4-methylpyridinium bis(trifluoromethanesulfonyl)imide (N- -4- ( ) ), N-hexadecyl-4-methylpyridinium bis(trifluoromethanesulfonyl)imide (N- -4- ( ) )and many more. The pyridinium salt is N-dodecylpyridine bis(trifluoromethanesulfonyl)imide (N- ( ) The structural formula of) is, for example: .
吡啶鎓鹽為N-十六烷基吡啶雙(三氟甲磺酰基)酰亞胺(N-( ))的結構式例如是:
吡啶鎓鹽為N-十二烷基吡啶六氟磷酸鹽(N- )的結構式例如是:
吡啶鎓鹽為N-十六烷基吡啶六氟磷酸鹽(N- )的結構式例如是:
吡啶鎓鹽為N-己基-4-甲基吡啶六氟磷酸鹽(N- -4-)的結構式例如是:。 The pyridinium salt is N-hexyl-4-methylpyridine hexafluorophosphate (N- -4- The structural formula of) is, for example: .
吡啶鎓鹽為N-丁基-4-甲基吡啶六氟磷酸鹽(N- -4-)的結構 式例如是:。 The pyridinium salt is N-butyl-4-methylpyridine hexafluorophosphate (N- -4- The structural formula of) is, for example: .
結構式(1)的吡啶鎓鹽的特徵在於,由R3表示的烷基是長鏈。吡啶鎓鹽可由常見的製備方式製成,例如下列結構式(2)。 The pyridinium salt of structural formula (1) is characterized in that the alkyl group represented by R 3 is a long chain. The pyridinium salt can be prepared by common preparation methods, such as the following structural formula (2).
結構式(2)的R3及R4的界定同於結構式(1)的R3及R4的界定。結構式(2)相當於烷基溴化吡啶鎓( )。通過對相當於LiX-(其中X-如結構式(1)所界定)的鋰鹽進行離子交換反應,然後用水洗滌,將生成的溴化鋰轉移至水相,基於有機相的製備方法,可製成結構式(1)的吡啶鎓鹽。此些吡啶鎓鹽可以單獨使用一種,也可以組合使用兩種以上。此外,吡啶鎓鹽的實例當然不限於上面列出的化合物。 Define the structural formula R (2) R 3 and R 4 is the same in the formula (1) Definition of R 4 and 3. Structural formula (2) is equivalent to alkyl pyridinium bromide ( ). By corresponding to LiX - (wherein X - The structure of formula (1)) a lithium salt ion exchange reaction, then washed with water, the resulting aqueous phase is transferred to lithium bromide, prepared based on the organic phase, can be made The pyridinium salt of structural formula (1). These pyridinium salts may be used alone or in combination of two or more. In addition, examples of pyridinium salts are of course not limited to the compounds listed above.
如第5圖所示,由於抗靜電液附著在光學膜片10a之裁切面10s上,因此可避免靜電吸附現象,進而減少或避免雜質沾附在裁切面10s上,以保持裁切面10s的潔淨度。
As shown in Figure 5, because the antistatic liquid adheres to the cutting
光學膜片10a可貼附於一光學產品(未繪示)上,以提供光學產品一光學功能。在將光學膜片10a貼附於光學產品的製程中,需先將第二保護層16自光學膜片10a上撕除,以露出黏膠層15,然後再以黏膠層15與光學產品之一透光件(未繪示)對接的方式,將光學膜片10a貼附在透光件上。雖然在第二保護層16自光學膜片10a上撕除過程中會於黏膠層15的黏膠面15s產生靜電,然由於裁切面10s具
有優良潔淨度(雜質少),使被靜電吸附到黏膠面15s的雜質會明顯減少,此可避免污染黏膠層15的黏膠面15s,進而增強黏膠層15與光學產品的結合性。此外,前述光學產品例如是觸控面板、顯示面板、觸控顯示面板或任何有需要光學膜片10a的產品,而光學產品的透光件例如是玻璃、透光塑板或其它合適元件。
The
此外,本文的表面處理液C1也可直接塗佈在光學膜之膜體的任何一表面,以獲得類似前述的抗靜電及/或減少汙染的技術功效。前述光學膜例如是光學捲膜或裁切後光學膜片。舉例來說,在裁切前及/或裁切後,表面處理液C1可塗佈在第3或4圖之光學捲膜10的上表面10u及/或下表面10b;或者,在裁切前及/或裁切後,表面處理液C1可塗佈在第5圖之裁切後光學膜片10a的上表面10u、下表面10b及/或側面,如裁切面10s。此外,前述上表面10u、下表面10b及/或側面為膜片的最外側之表面。另,前述光學膜之膜體例如是包含第一保護層11、第一覆蓋層12、偏光層13、第二覆蓋層14、黏膠層15與第二保護層16之至少一者。
In addition, the surface treatment liquid C1 herein can also be directly coated on any surface of the film body of the optical film to obtain similar antistatic and/or pollution reduction technical effects. The aforementioned optical film is, for example, an optical roll film or a cut optical film. For example, before cutting and/or after cutting, the surface treatment liquid C1 can be coated on the
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to those defined by the attached patent scope.
10:光學捲膜 10: Optical roll film
10’:成分 10’: Ingredients
11:第一保護層 11: The first protective layer
12:第一覆蓋層 12: The first covering layer
13:偏光層 13: Polarizing layer
14:第二覆蓋層 14: second covering layer
15:黏膠層 15: Adhesive layer
16:第二保護層 16: second protective layer
100:裁切設備 100: Cutting equipment
110:傳輸輪 110: Transmission wheel
120:承靠輪 120: Support Wheel
130:裁切刀具 130: cutting tool
140:容器 140: container
150:表面處理元件 150: Surface treatment components
A1:虛線 A1: dotted line
C1:表面處理液 C1: Surface treatment liquid
D1、D2:轉動方向 D1, D2: rotation direction
P1:裁切處 P1: Cutting area
T1:接觸區 T1: contact area
T11、T12:切線方向 T11, T12: Tangent direction
x、y:軸向 x, y: axial
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