TWI697135B - 利用微機電製程接合與組裝發光二極體裝置 - Google Patents

利用微機電製程接合與組裝發光二極體裝置 Download PDF

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TWI697135B
TWI697135B TW104132923A TW104132923A TWI697135B TW I697135 B TWI697135 B TW I697135B TW 104132923 A TW104132923 A TW 104132923A TW 104132923 A TW104132923 A TW 104132923A TW I697135 B TWI697135 B TW I697135B
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emitting diode
light
electrode
diode chip
metal
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TW104132923A
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TW201616690A (zh
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何冠儒
葉瑞鴻
黃子逸
陳志忠
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晶元光電股份有限公司
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Publication of TW201616690A publication Critical patent/TW201616690A/zh
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Abstract

一發光二極體裝置，包含具有一第一電極之一第一發光二極體晶片、具有一第二電極之一第二發光二極體晶片、一連接第一電極與第二電極的可延伸金屬絲線、以及一連接至第一電極與第二電極之金屬晶種層，其中可延伸金屬絲線係可沿著一方向延伸並同時與第一電極及第二電極保持相連。

Description

利用微機電製程接合與組裝發光二極體裝置
本發明係關於一種與發光二極體晶片（LED chip）相關之封裝及接合工程，尤關於一種發光二極體封裝及接合技術及其集成製造方法（integrated fabrication method）。此發光二極體封裝及接合技術係利用微機電製程技術形成數個藉由可拉伸之金屬絲線圖案彼此相連之發光二極體晶片。此數個發光二極體晶片可以延展方式固定至一基板上而成為一體。
發光二極體由於小尺寸、低耗能、較低的操作溫度與較長的使用壽命，常被使用於照明用途，因而逐漸取代傳統鎢絲燈泡與螢光燈。為了製造發光二極體燈條（light string）或燈絲（filament），多個發光二極體晶片需要被適當地放置到電路板上的預設位置。往常發光二極體晶片是以對位法（alignment method），例如拾取-放置法（pick-and-place process），逐一被結合（mount）並放置到電路板上。此後，再以打線接合（wire bonding）的方式於發光二極體晶片之間形成電性連接（electrical connection）。發光二極體晶片的結合製程可以利用發光二極體晶片固晶機（chip mounter）實現。傳統結合與放置發光二極體晶片方法的缺點在於利用拾取-放置法逐一安置晶片過於耗時且其設備過於昂貴。此外，電性連接發光二極體的打線接合步驟也十分耗時。因此，改善相關技術有其需求。
一發光二極體裝置，包含具有一第一電極之一第一發光二極體晶片、具有一第二電極之一第二發光二極體晶片、一連接第一電極與第二電極的可延伸金屬絲線、以及一連接至第一電極與第二電極之金屬晶種層，其中可延伸金屬絲線係可沿著一方向延伸並同時與第一電極及第二電極保持相連。
在此所呈現的各實施例中，各個發光二極體晶片的p接合墊與n接合墊可以都位在發光二極體晶片的同一側。
以下描述依據本發明第一實施例之結合及電性連接複數個發光二極體晶片之集成製造方法。參考第1圖，發光二極體晶片5與複數個金屬層10、15二者皆被設置於發光二極體晶圓（LED wafer）18的一側上。在本實施例中，金屬層10具有鈦，而金屬層15具有銅。鈦金屬層10與銅金屬層15是利用電子束蒸鍍法（e-gun evaporation）沉積。其中，鈦金屬層10先沉積，再沉積銅金屬層15。此外，複數個接合墊20形成在發光二極體晶片5之上。參考第2圖，形成光阻層25以覆蓋於金屬層（Ti/Cu）10、15的上方。光阻層25可以是負光阻，顯影劑可以採用有機溶劑。接著利用光罩將光阻層25顯影並曝光，而負光阻未被曝光的區域則利用溶劑溶解去除。光罩（未繪示）被設計成具有一個（硬質的）圖案，此圖案具有複數個可延伸的金屬絲線與複數個接觸電極。經過顯影與曝光的步驟後，光罩上的圖案（未繪示於圖中）被轉移到圖案化光阻層25上，圖案化光阻層25因而在後續的步驟中就被作為光罩（mask）使用。而圖案化光阻層中被移除的部分被當作開口27。在另一實施例中，光阻層25可以是正光阻，而光罩的圖案可以包括複數個可延伸金屬絲線以及作為開口區域（露出的區域）的複數個接觸電極。利用光罩以形成如第2圖所示之圖案化光阻層25時，可以利用電漿蝕刻法（plasma etching）。
參考第3圖，圖案化光阻層25被當作光罩使用，而金屬材料29，例如銅，則透過製程被填入位於被蝕刻的或是被圖案化的光阻層25的開口27中以形成複數個可延伸的金屬絲線30，並且金屬絲線30可以具有是彈簧的形狀（由平行於發光二極體晶圓18上表面的上視圖觀之）。又例如利用圖案化光阻層25作為光罩，可以在接合墊20上方填入金屬以形成複數個接觸電極35。鍍層37也可以被形成在位於接合墊20上方的接觸電極35之上，鍍層37的材料可以是由銅或金等材料構成。參考第4圖，第一膠膜45被連接到圖案化光阻層25靠近發光二極體的接合墊20與可延伸的金屬絲線30的一側。於本實施例中，第一膠膜45被當作載體，且是可彎曲、可拉伸並可透光的塑膠材質，其上更具有覆蓋一側的黏性層。連接到第一膠膜45的環46是載體（未繪示於圖中）的一部分，其係例如一個圓形的支架，用以在後續的製程中支撐第一膠膜45。藉由載體的支撐，柔軟的第一膠膜45可以被限制成固定的幾何形狀，並可以在穩定的狀態下被拉伸。不僅如此，環46可以用來維持整體結構穩固地設置於第一膠膜45之上，並將第一膠膜45在接下來的製造流程中固定在同樣的位置上。參考第5圖，複數個切割線48形成在發光二極體晶圓18的另一表面47上，且鄰近發光二極體晶片5的一側。這些切割線48可以被用來分開與劈裂發光二極體晶片5。參考第6圖，發光二極體晶片5被沿著切割線48分開，而第一膠膜45在劈裂的步驟中依然與發光二極體晶片5相連。在劈裂的步驟之後，第一膠膜45可以被移除。此後，第二膠膜55被連接到發光二極體晶圓18的另一表面47，第一膠膜45接著被移除。於本實施例中，環56是載體的一部分，並支撐的第二膠膜55。如上所述，環56可以用來固定整體結構使其穩固地設置於第二膠膜55之上，並將第二膠膜55在接下來的製造流程中限制在同樣的位置上。圖案化光阻層25可以利用濕式剝離法（溶劑或者酸）或電漿氣體剝離法加以去除。連接到發光二極體晶圓18的金屬層（Ti/Cu） 10、15則被選擇性地蝕刻。因此，部分的銅金屬層29保留下來作為彈簧或者可延伸的金屬絲線30、以及接觸電極35的部分。而未被蝕刻的鈦金屬層10則連接到接觸電極35。利用可以蝕刻鈦而不會蝕刻銅的蝕刻液，以濕式蝕刻選擇性地蝕刻鈦金屬層10後，可以形成包括複數個可延伸金屬絲線30的圖案（來自於選擇性蝕刻後原始銅金屬層殘餘的部分），金屬絲線30並連接到複數個發光二極體晶片5，其中，相鄰發光二極體晶片5透過這些可延伸的金屬絲線30彼此相連。於本實施例第2圖至第6圖中所發生的製造步驟可以視為微機電製造步驟。參考第7圖，當藉由加熱或者UV光線移除第二膠膜55時，接觸電極35係被連接或安置到延展盤38上。延展盤38是一個加工好的金屬組件，其具有多個轉換階段（x向、y向、z向、徑向），並有一個中心延展區域（未繪示）以承載發光二極體晶圓18。延展盤38的中心延展區域的尺寸取決於晶圓的尺寸。延展盤38更具有複數個延展臂（未繪示），以預定間隔環繞著中心延展區域以拉伸發光二極體晶圓18的數邊。
因為發光二極體晶片5已經沿著切割線48被分離並斷開，發光二極體晶片5便可以藉由伸展第二膠膜55到所需長度與寬度更進一步分開，以將發光二極體晶片5安置到各式各樣所需的基板上。同時，可延伸金屬絲線30具有像彈簧的結構，在收縮的狀態下以大致平行的方向擺放。被拉伸的相連發光二極體晶片5在可延伸金屬絲線30處於延展狀態下仍彼此電性連接。可延伸的金屬絲線30不論在拉伸/擴大的狀態或者在壓縮/縮小的狀態下都可以作為導電線。可以將大量的可延伸金屬絲線30形成到一個晶圓上，並配置且用以形成特定圖案以連接大量的發光二極體晶片5，例如，一次連接一個六吋晶圓上的96000個發光二極體晶片。由於可延伸金屬絲線30的可延伸物理特性，各對相連發光二極體晶片5間的距離可以不同，並可以增加到一預定寬度以容許或提供發光二極體晶片5在安置與結合上的彈性，而無需擔心可延伸金屬絲線30太短或者糾纏在一起。
以下描述根據本發明第二實施例之結合及電性連接複數個發光二極體晶片之集成製造方法。如第8圖所示，金屬晶種層100被形成於暫時基板105的一側106。金屬晶種層100含有鈦。金屬晶種層100可以用電子束蒸鍍法沉積。如第9圖所示，光阻層110被形成用以覆蓋金屬晶種層100的上方。光阻層110可以是正光阻或者負光阻，並接著被蝕刻或者曝光/顯影以作為光罩。如第10圖所示，利用圖案化光阻層110當作光罩。含有銅的金屬層117被填入位於被圖案化光阻層110的開口119中以形成複數個可延伸金屬絲線120以及數個接觸電極125，其中，金屬絲線120可以是彈簧的形狀。可延伸金屬絲線120形成一個預定圖案（未繪示於圖中）以覆蓋暫時基板105。可延伸金屬線120的兩端連接到一對在其兩端上相鄰的接觸電極125。如第11~12圖所示，圖形化光阻層110可以利用如濕式剝離法（利用溶劑或者酸）或電漿氣體剝離法等製程加以移除，並選擇性蝕刻以移除金屬晶種層100使得電性連接到到接觸電極125的可延伸金屬絲線120保留在暫時基板105之上。亦即，部分位於可延伸金屬絲線120之下的金屬晶種層100a係大體上藉由選擇性蝕刻被移除，而部分在接觸電極125之下的金屬晶種層100b則被保留下來。於本實施例第9至第12圖中所實施的製造步驟可以視為微機電製造步驟。如第13圖所示，第一膠膜130被連接到複數個發光二極體晶片5的一側，其中各個發光二極體晶片5具有一對連接墊135。連接到第一膠膜130的一個發光二極體晶片5的一對連接墊135係分別與如第10圖中所示的一對接觸電極125（連接到暫時基板105）相對齊。如第14圖所示，接觸電極125的一側被連接到相對應的連接墊135，而接觸電極125的另一側則連接到相對應的金屬晶種層100b的部分。第一膠膜130被從發光二極體晶片5移開，並形成一個中間發光二極體晶片組件140。如第15圖所示，在利用熱、UV光線或者有機溶劑等方式從中間發光二極體晶片組件140移除暫時基板105之後，中間發光二極體晶片組件140與發光二極體晶片5都被連接到最終基板145以形成一個玻璃晶片封裝（COG; chip on glass）或一個基板晶片封裝（COB; chip on board）。玻璃晶片封裝包含一個作為載體之玻璃基板或者透明基板，基板晶片封裝包含一個做為載體之印刷電路板（PCB）。
以下描述根據本發明的第三實施例之電性連接複數個發光二極體晶片之集成製造方法。如第16圖所示，發光二極體晶片5與複數個由銅之類的金屬所製造的接合墊20被形成於基板103的一個表面上。如第17圖所示，以例如電子束蒸鍍法等方法所沉積的金屬層116覆蓋發光二極體晶片5與接合墊20。如第18圖所示，光阻層110被形成以覆蓋金屬層116之上方。光阻層110接著被蝕刻或圖案化以作為遮罩（光罩）用。如第19圖所示，被蝕刻後或者被圖案化後的光阻層110被作為遮罩之用，而例如銅等金屬材料被填入圖案化光阻層110的開口以形成複數個可延伸的金屬絲線170。可延伸的金屬絲線170可以為彈簧形狀的短線，也形成複數個位於發光二極體晶片5的接合墊20之上的接觸電極35，而發光二極體晶片5則位於基板103之上。如第20圖所示，圖案化的光阻層110藉由濕式剝離（溶劑或者酸），或者利用電漿氣體剝離等方式移除，並以深層雷射畫線等方式於基板103上形成切割線48。如第21圖所示，以選擇性蝕刻的方式移除金屬層116，以保留位於接合墊20與接觸電極35之間的金屬層116之部分。連接到發光二極體晶片5的接合墊20被保留下來。被保留下來的金屬層更作為彈簧結構以提供可延伸的金屬絲線170與接觸電極35。選擇性蝕刻鈦金屬層後，再由銅金屬層形成連接發光二極體晶片5的可延伸的金屬絲線170的圖樣，其中，相鄰的發光二極體晶片5則透過可延伸的金屬絲線170彼此相連。位於可延伸金屬絲線170之下的金屬層大致上可以透過選擇性蝕刻加以移除。如第22圖所示，由於發光二極體晶片5已經沿著切割線48分開，具有各自分開的發光二極體晶片5之基板103更可以再分割（score）或切線（scribe），並藉此分隔開已經畫線的結構。因此，複數個發光二極體晶片組件具有連接相鄰發光二極體晶片5的可延伸的金屬絲線170。
以下描述根據本發明第四實施例之電性連接複數個發光二極體晶片至一基板上的一種集成製造方法。如第23圖所示，金屬晶種層100形成於透明基板300的一側之上。金屬晶種層100可以利用電子束蒸鍍法沉積。如第24圖所示，形成光阻層110以覆蓋金屬晶種層100上方，光阻層110接著被蝕刻或者被圖案化以作為遮罩使用。如第25圖所示，以光阻層110作為遮罩，金屬（例如銅）被填入圖案化的光阻層110的開口119以形成複數個可延伸的金屬絲線120。複數個可延伸金屬絲線120可以具有彈簧的外型。包含銅的金屬材料117被填入開口119以形成複數個接觸電極125。可延伸金屬絲線120形成一覆蓋透明基板300的預定圖案。每一個可延伸的金屬絲線120的兩端分別連接一對相鄰的接觸電極125。如第26圖所示，藉由濕式剝離（溶劑或者酸）或者電漿氣體剝離等方式移除光阻層110，以留下填入開口以形成可延伸的金屬絲線120與接觸電極125的金屬。每一個可延伸金屬絲線120連接到一對相鄰的接觸電極125。此外，連接接觸電極125的可延伸金屬絲線120圖案係形成在透明基板300。如第27圖所示，進行選擇性蝕刻以移除金屬晶種層100，因此連接接觸電極125的可延伸金屬絲線120被保留在基板300之上。位於可延伸性的金屬絲線120之下的金屬晶種層100大致上都藉由選擇性蝕刻移除。於本實施例中從第24圖到第27圖發生的步驟可以被視為微機電裝置製程。如第28圖所示，第一膠膜130被結合到複數個發光二極體晶片5的一側，其中每一個發光二極體晶片5都有一對接觸墊135。每個發光二極體晶片5連接到第一膠膜130的接觸墊135對準相應的接觸電極125（連接到透明基板），如第28圖所示。如第29圖所示，接觸墊135被連接到相對應的接觸電極125。將第一膠膜130自發光二極體晶片5移除，以形成一中間發光二極體晶片組件140。如第30圖所示，透明基板300被切割並斷開。如第31圖所示，被可延伸金屬絲線120連接的複數個發光二極體晶片5可以在垂直方向上（沿著y軸）以及水平方向上（沿著x軸）移動及/或擴張，因此讓一結構體便於與一個軟性載板（未繪示於圖中）相連接，此結構體包含獨立的發光二極體晶片5及與其相連的獨立透明基板300塊。
以下描述根據本發明第五實施例之電性連接複數個發光二極體晶片至一基板上的集成製造方法。如第32圖所示，金屬晶種層100被形成於透明基板300的一側。金屬晶種層100可以用電子束沉積的方法形成。如第33圖所示，形成光阻層110以覆蓋金屬晶種層100。然後蝕刻光阻層110以當作遮罩之用。如第34圖所示，使用被蝕刻後的光阻層110作為遮罩，包含銅之金屬材料被填入被蝕刻後的光阻層110的開口119以形成複數個可延伸的金屬絲線120與複數個接合端310。可延伸的金屬絲線120可以做成彈簧的形狀。可延伸的金屬絲線120形成一個預訂的圖案，其係覆蓋在例如透明基板300上的一個區域。可延伸的金屬絲線120的兩端連接到一對相鄰的接合端310。如第35圖所示，藉由濕式剝離（溶劑或者酸）或者電漿氣體剝離等方式移除被蝕刻的光阻層110，但是形成可延伸金屬絲線120及接合端310的金屬被保留下來。各個可延伸的金屬絲線120連接到一對相鄰的接合端310。此外，於透明基板300上形成連接許多結合端310的可延伸金屬絲線120圖案。如第36圖所示，利用選擇性蝕刻的方式移除金屬晶種層100，因此連接著接合端310的可延伸金屬絲線120可以存留在透明載板300之上。位於可延伸性的金屬線120之下的金屬晶種層100大致上藉由選擇性蝕刻的方式移除掉。於本實施例中從第33圖到第36圖可以視為微機電裝置製程。如第37圖所示，複數個發光二極體晶片5透過發光二極體晶片5之接合墊20形成於第一膠膜130之上。接著，藉由加熱、施加UV光線或者利用有機溶劑等方法，將第一膠膜130與形成於其上的發光二極體晶片5連接到透明基板300之上。其中，接合端310與可延伸金屬絲線120可以選擇性地連接到第一膠膜130。
根據第5實施例，不論是第38a圖中的導線接合結構180或者是第38b圖中的金屬化結構190都可以用來形成電性路徑以連接到外部電源或是其他發光二極體晶片5。如第38a圖所示，透明基板300被切割並斷開成許多獨立的透明載板塊300a，其中每一個透明載板塊300a承載著一個發光二極體晶片5。在接合端310與發光二體晶片5的其中一個接合墊20以導線接合的方式形成電性連接，同時，在第34圖與35圖中所描述的步驟中形成的接合端310與可延伸的金屬線120彼此電性連接。如第38b圖所示，透明基板300被切開並分離成多個分開的透明載板塊300b，其中每一個載板塊300b承載/包含著一個發光二極體晶片5，再利用光學製程與金屬化製程，於接合端310與發光二極體晶片5的其中一個接合墊20之間形成電性連接。另一方面，於第34圖與35圖中所描述的步驟中形成的可延伸金屬絲線120與接合端310彼此電性連接。如第39圖所示，根據本發明第五實施例，上視示意圖係揭示位於透明載板300上的發光二極體晶片5與由可延伸金屬絲線120構成的彈簧結構連接到相鄰的接合端310的態樣。
在所述的實施例中，包括第一到第五實施例中，可延伸的金屬絲線的厚度t（如第一實施例之第3圖所示）係介於0~100 μm。於另一實施例中，厚度t小於70μm。
如上述一些實施例所述，承載發光二極體晶片的膠膜與可延伸的金屬絲線之間相隔一較大的距離，或者以一相當接近的距離靠近/相比鄰。上述實施例中，所使用到的膠膜可以沿著一個方向上或者多個方向上擴張或者延伸。在上述所有的實施例中，可延伸的金屬絲線可以懸空。在數個實施例中，膠膜是由一塗佈著黏著層（未繪示於圖中）之薄層（未繪示於圖中）所組成。黏著層的材料可以是丙烯酸基底的材料。薄層的材料可以是由PVC所組成。除此之外，可延伸的金屬絲線可以由金屬所形成，例如鎳、銀或者金。
於其他替代實施例中，發光二極體晶片的接合墊可以形成在發光二極體晶片的不同表面上或者同樣表面上。因此，p型接合墊與n型接合墊也可以形成在發光二極體晶片的不同側。
在一實施例中，基板50支撐複數個發光二極體晶片5，其中機板50可以被切成多個基板塊51。如第40圖所示，基板50的每一個基板塊51具有大於一個的發光二極體晶片5。於數個實施例中，可延伸金屬絲線的寬度可以小於70μm，例如5μm、10μm、27μm、57μm或62μm。可延伸的金屬絲線的長度在收縮的狀態下可以是255μm，或者在拉伸的狀態下可以是1200μm。另一方面，以可延伸金屬絲線的收縮長度當作A，可延伸金屬斯線的拉伸長度大約是3.5A~4A。可延伸金屬絲線的曲率（R）與厚度（t）的比例t/2R不會超過可延伸金屬絲線材料的降伏應變。
需了解的是，本發明中上述之實施例在適當的情況下，是可互相組合或替換，而非僅限於所描述之特定實施例。本發明所列舉之各實施例僅用以說明本發明，並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易見之修飾或變更接不脫離本發明之精神與範圍。
5‧‧‧發光二極體晶片； 10、15、116‧‧‧金屬層； 18‧‧‧發光二極體晶圓； 20‧‧‧接合墊； 25、110‧‧‧光阻層； 27、119‧‧‧開口； 29‧‧‧金屬材料； 30、120、170‧‧‧可延伸金屬絲線； 35、125‧‧‧電極； 37‧‧‧鍍層； 38‧‧‧延展盤； 45、55、130‧‧‧膠膜； 46、56‧‧‧環； 47‧‧‧表面； 48‧‧‧切割線； 100、100a、100b‧‧‧金屬晶種層； 50、103、300‧‧‧基板； 51‧‧‧基板塊； 105‧‧‧暫時基板； 106‧‧‧側； 117‧‧‧金屬層； 135‧‧‧連接墊； 140‧‧‧組件； 145‧‧‧最終基板； 180‧‧‧導線接合結構； 190‧‧‧金屬化結構； 300a、300b‧‧‧載板塊； 310‧‧‧接合端；
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式，說明如下。
第1~7圖顯示依據本發明第一實施例之集成製造方法之剖面示意圖。
第8~15圖顯示依據本發明第二實施例之一體化製造方法之剖面示意圖。
第16~22圖顯示依據本發明第三實施例之一體化製造方法之剖面示意圖。
第23~31圖顯示依據本發明第四實施例之一體化製造方法之剖面示意圖。
第32~38B圖顯示依據本發明第五實施例之一體化製造方法之剖面示意圖。
第39圖係一上視示意圖，顯示依據本發明第五實施例之位於透明基板上之發光二極體晶片以及連接相鄰結合端之具有可拉伸金屬絲線之彈簧結構。
第40圖顯示被分割成數塊的基板，其中，各個基板包括一個以上之發光二極體晶片。
5‧‧‧發光二極體晶片
20‧‧‧接合墊
120‧‧‧可延伸金屬絲線
300‧‧‧基板
310‧‧‧接合端

Claims (9)

  1. 一發光二極體裝置，包含：一第一發光二極體晶片，包含一具有第一最上表面的第一電極；一第二發光二極體晶片，與該第一發光二極體晶片分離，並包含一具有第二最上表面的第二電極；以及一第一金屬線，包含連接該第一電極的第一端與連接該第二電極的第二端，該第一金屬線可以往相異之第一方向與第二方向延伸，其中，該第一端與該第二端的最上表面具有相同的高度，其中，該第一金屬線，具有一厚度t與一曲率R，且t/2R不會超過該第一金屬線的降伏應變。
  2. 如申請專利範圍第1項所述之發光二極體裝置，該第一端與該第二端的最上表面平行該第一最上表面。
  3. 如申請專利範圍第1項所述之發光二極體裝置，該第一金屬線具有一彈簧造型。
  4. 如申請專利範圍第1項所述之發光二極體裝置，更包含一第三發光二極體晶片與一第二金屬線，其中該第二金屬線連接該第三發光二極體晶片與該第一發光二極體晶片，並且該第一發光二極體晶片與該第二發光二極體晶片之間的距離跟該第三發光二極體晶片與該第一發光二極體晶片之間的距離不同。
  5. 如申請專利範圍第1項所述之發光二極體裝置，其中該第一發光二極體晶片與該第二發光二極體晶片可沿著該第一方向或該第二方向移動及/或擴張。
  6. 如申請專利範圍第1項所述之發光二極體裝置，其中該第二方向大致垂直於該第一方向。
  7. 如申請專利範圍第1項所述之發光二極體裝置，更包含一導線接合結構位於該第一電極與該第一金屬線之間。
  8. 如申請專利範圍第1項所述之發光二極體裝置，更包含一第一透明基板，承載該第一發光二極體晶片；一第二透明基板，承載該第二發光二極體晶片；以及一金屬化結構連接該第一電極與該第一金屬線。
  9. 如申請專利範圍第1項所述之發光二極體裝置，該第一發光二極體晶片更包含一第三電極，該第一電極與該第三電極位於該第一發光二極體晶片的不同面上。
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