TWI697088B - 用於覆晶雷射接合之系統 - Google Patents

用於覆晶雷射接合之系統 Download PDF

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TWI697088B
TWI697088B TW108119956A TW108119956A TWI697088B TW I697088 B TWI697088 B TW I697088B TW 108119956 A TW108119956 A TW 108119956A TW 108119956 A TW108119956 A TW 108119956A TW I697088 B TWI697088 B TW I697088B
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Taiwan
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unit
laser
mask
substrate
semiconductor wafer
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TW108119956A
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TW202042360A (zh
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高允成
安根植
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南韓商普羅科技有限公司
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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Abstract

本發明是有關於一種覆晶雷射接合系統。覆晶雷射接合 系統包括供給單元，供給基板；固定單元，自供給單元接收基板並固定基板的下表面；雷射單元，包含對固定於固定單元的基板照射雷射束而將半導體晶片與基板接合的雷射頭、及移送雷射頭的雷射移送部；遮罩，包含使雷射束透過的透過部；遮罩放置單元，將遮罩放置於固定單元的上側；加壓單元，使遮罩放置單元與固定單元相對升降；排出單元，自固定單元傳遞接收並排出基板；紅外線相機，對半導體晶片進行拍攝；控制部，控制供給單元、固定單元及排出單元的作動。

Description

用於覆晶雷射接合之系統
本發明是有關於一種覆晶(flip chip)雷射接合系統，更詳細而言是有關於一種利用雷射束將覆晶形態的半導體晶片接合至基板的覆晶雷射接合系統。
電子製品小型化的同時，廣泛利用不使用打線接合(wire bonding)的覆晶形態的半導體晶片。覆晶形態的半導體晶片以如下方式安裝至基板：於半導體晶片的下表面形成焊料凸塊形態的多個電極，並接合至與形成於基板的焊料凸塊對應的位置。
如上所述，以覆晶方式將半導體晶片安裝至基板的方法大致有回焊(reflow)方式與雷射接合方式。回焊方式為如下方式：藉由在將於焊料凸塊塗佈有焊劑(flux)的半導體晶片配置於基板上的狀態下經由高溫的回焊而將半導體晶片接合至基板。與回焊方式相同地，雷射接合方式為如下方式：藉由在將於焊料凸塊塗佈有焊劑的半導體晶片配置於基板上的狀態下對半導體晶片照射雷射束而傳遞能量，從而瞬間使焊料凸塊熔化後凝固的同時將半導體晶片接合至基板。
最近，所使用的覆晶形態的半導體晶片存在厚度變薄至 數十微米以下的趨勢。如上所述，於半導體晶片薄的情況下，因半導體晶片自身的內部應力而半導體晶片微細地彎曲或翹曲(warped)的情況多。如上所述，於半導體晶片變形的情況下，會發生在半導體晶片的焊料凸塊中有與基板的對應的焊料凸塊以不接觸的狀態接合的情況。此種狀況導致半導體晶片接合製程的不良。另外，於半導體晶片及基板的溫度上升以將半導體晶片接合至基板的情況下，會發生因材料內部材質的熱膨脹係數的差異而使半導體晶片或基板局部地彎曲或翹曲的現象。此種現象亦導致半導體晶片接合製程的不良。
本發明是為了解決如上所述的問題點而提出的，目的在於提供一種覆晶雷射接合系統，所述覆晶雷射接合系統防止焊料凸塊的接觸不良的同時，可有效地將彎曲或翹曲的半導體晶片或因溫度上升而可能彎曲或翹曲的半導體晶片接合至基板。
用以達成所述目的的本發明的覆晶雷射接合系統，其特徵在於包括：供給單元，供給基板，所述基板處於配置有用以接合至基板的上表面的多個半導體晶片的狀態；固定單元，自所述供給單元接收所述基板並固定所述基板的下表面；雷射單元，包含對固定於所述固定單元的基板照射雷射束而將所述半導體晶片與基板接合的雷射頭、及移送所述雷射頭的雷射移送部；遮罩， 包含透過部，所述透過部使自所述雷射單元的雷射頭照射的雷射束透過，並使包含波長為3微米以上且9微米以下的區域帶的紅外線透過；遮罩放置單元，將所述遮罩放置於所述固定單元的上側；加壓單元，使所述遮罩放置單元與固定單元中的任一者相對於另一者進行升降，以使所述遮罩的透過部能夠對固定於所述固定單元的所述基板的多個半導體晶片進行加壓；排出單元，自所述固定單元傳遞接收並排出所述基板；紅外線相機，對由所述雷射單元的雷射頭照射雷射束的所述半導體晶片進行拍攝；以及控制部，對所述供給單元、所述固定單元、及所述排出單元的作動進行控制，並利用在所述紅外線相機中測定的值來對所述雷射單元的雷射頭的作動進行控制。
用以達成所述目的的本發明的覆晶雷射接合系統，其特徵在於包括：供給單元，供給基板，所述基板處於配置有用以接合至基板的上表面的多個半導體晶片的狀態；固定單元，自所述供給單元接收所述基板並固定所述基板的下表面；雷射單元，包含對固定於所述固定單元的所述基板照射雷射束而將所述半導體晶片與所述基板接合的雷射頭、及移送所述雷射頭的雷射移送部；遮罩，包含透過部，所述透過部使自所述雷射單元的所述雷射頭照射的所述雷射束透過，且所述透過部由氟化鋇(BaF2)及硒化鋅(ZnSe)中的任一者形成；遮罩放置單元，將所述遮罩放置於所述固定單元的上側；加壓單元，使所述遮罩放置單元與所述固定單元中的任一者相對於另一者進行升降，以使所述遮罩的所述透過 部能夠對固定於所述固定單元的所述基板的所述多個半導體晶片進行加壓；排出單元，自所述固定單元傳遞接收並排出所述基板；紅外線相機，對由所述雷射單元的所述雷射頭照射所述雷射束的所述半導體晶片進行拍攝；以及控制部，對所述供給單元、所述固定單元、及所述排出單元的作動進行控制，並利用在所述紅外線相機中測定的值對所述雷射單元的所述雷射頭的作動進行控制。
本發明的覆晶雷射接合系統具有如下效果：藉由以加壓狀態將半導體晶片雷射接合至基板，從而可將彎曲或可能彎曲的半導體晶片接合至基板而無焊料凸塊的接觸不良。
110:供給單元
120:固定單元
130:排出單元
200:雷射單元
210:雷射頭
220:雷射移送部
230:檢查相機
240:紅外線相機
300:遮罩放置單元
350:加壓單元
400:遮罩
410:遮罩本體
420:透過孔
430:止擋棱
440:透過部
441:重量槽
442:重量錘
500:控制部
600:遮罩更換單元
610:檢查燈
圖1是根據本發明的一實施例的覆晶雷射接合系統的立體圖。
圖2是圖1所示的覆晶雷射接合系統的前視圖。
圖3是針對圖1所示的覆晶雷射接合系統的一部分的俯視圖。
圖4是圖1所示的覆晶雷射接合系統所使用的遮罩的平面圖。
圖5是圖4所示的遮罩的V-V線的剖視圖。
以下，參照隨附圖式，詳細地對本發明的覆晶雷射接合系統進行說明。
圖1是本發明的一實施例的覆晶雷射接合系統的立體圖，圖2是圖1所示的覆晶雷射接合系統的前視圖。
本實施例的覆晶雷射接合系統是利用雷射束而以便於將半導體晶片以覆晶形態接合至基板的裝置。於基板與半導體晶片中任一者或於兩者分別形成有焊料凸塊，因此藉由利用雷射束傳遞的能量而使焊料凸塊瞬間熔化後凝固，同時將半導體晶片接合至基板。
參照圖1及圖2，根據本實施例的覆晶雷射接合系統包括供給單元110、固定單元120、雷射單元200及排出單元130而構成。
供給單元110是將用以進行雷射接合的基板供給至固定單元120的構成。基板以配置有多個半導體晶片的狀態被供給。通常，於基板塗佈有焊劑且於其上配置有半導體晶片。因焊劑的黏性或黏著性而半導體晶片處於臨時接著於基板的狀態。除非施加較大的振動或外力，配置於一個基板上的半導體晶片藉由焊劑而不晃動，且保持相對於基板的位置。
如上所述，供給單元110將以臨時接著有半導體晶片的狀態的多個基板依次供給至固定單元120。於本實施例的情況下，供給單元110利用支撐基板的兩側的皮帶(belt)而向固定單元120供給基板。
固定單元120亦利用支撐基板的兩側的皮帶而將自供給單元110傳遞接收的基板移送至作業位置。固定單元120以吸附 基板的下表面的方法進行固定。
雷射單元200配置於固定單元120的上側。雷射單元200包含雷射頭210與雷射移送部220。雷射頭210對固定於固定單元120的基板照射雷射束並傳遞能量。雷射移送部220沿上下方向與水平方向移送雷射頭210。控制部500使雷射單元200作動，以便雷射頭210沿固定於固定單元120的基板的半導體晶片的上側依次移動的同時照射雷射束。
於固定基板的固定單元120的上側配置遮罩400。遮罩400藉由遮罩放置單元300支撐。遮罩400包含可使雷射光透過的透過部440。自雷射頭210照射的雷射束通過遮罩400的透過部440而傳遞至下側的半導體晶片。於根據本實施例的覆晶雷射接合系統中，透過部440由氟化鋇(BaF2)形成。與僅使可見光與短波長區域的紅外線透過的石英(Quartz)不同地，氟化鋇(BaF2)為亦使較長波長區域的紅外線透過的透明材質。石英為使具有0.18微米至3.5微米波長的光透過的材質，與此相反，氟化鋇(BaF2)使具有0.15微米至12微米波長的光亦透過。關於遮罩400的具體構造將在下文進行說明。
加壓單元350為如下構成：使遮罩放置單元300與固定單元120中的任一者相對於另一者進行升降，以便於藉由遮罩400的透過部440對附著於基板的半導體晶片進行加壓。於本實施例，加壓單元350使基板升降。參照圖2，加壓單元350使在固定單元120中吸附基板的下表面的構成升降。若於遮罩放置單元300放置 有遮罩400的狀態下，加壓單元350抬升基板，則遮罩400的透過部440的重量被置於半導體晶片以同時對半導體晶片進行加壓。
排出單元130自固定單元120傳遞接收並排出完成半導體晶片的雷射接合的基板。與供給單元110及固定單元120相同地，排出單元130利用支撐基板的兩側的皮帶而自固定單元120傳遞接收基板並排出至卸載機(unloader)。
控制部500對包含供給單元110、固定單元120、雷射單元200、排出單元130等構成在內的本發明的主要構成的作動進行控制。
檢查相機230配置於固定單元120的上側。於本實施例，檢查相機230設置於雷射單元200並藉由雷射移送部220與雷射頭210一同移動。檢查相機230對配置於下側的基板或遮罩400進行拍攝，以使控制部500掌握半導體晶片的位置或判斷遮罩400是否污染。
檢查燈610配置於檢查相機230的下側。於本實施例的情況下，檢查燈610設置於後述的遮罩更換單元600。檢查燈610配置於移送遮罩400的路徑的下側。檢查燈610從遮罩400的下側照射光。從檢查燈610產生的光經過遮罩400的透過部440而傳遞至上側的檢查相機230。利用檢查燈610的照明，檢查相機230可更有效地對遮罩400的透過部440進行拍攝。接收在檢查相機230中拍攝的影像的控制部500檢查遮罩400的透過部440是否污染，並基於此檢查遮罩400的更換必要性。
參照圖3，於固定單元120的上側設置有紅外線相機240。紅外線相機240對固定於固定單元120的基板的半導體晶片進行拍攝。在照射雷射束而焊料凸塊熔化的過程中，半導體晶片的溫度亦上升。通常，半導體晶片的溫度在自50℃至500℃之間變化。根據維恩位移定律(Wien displacement law)，自在50℃至500℃之間變化的半導體晶片放射的紅外線的波長為大約3微米以上且9微米以下。於遮罩400被配置於基板的上側的情況下，藉由遮罩400的透過部440對半導體晶片進行拍攝。如上所述，本實施例的遮罩400的透過部440包含氟化鋇(BaF2)，因此使波長為0.15微米至12微米的光透過。即，透過部440不僅使自雷射頭210產生的雷射光全部透過，而且使具有從3微米至9微米為止的波長的紅外線全部透過。因此，可對配置於透過部440的下側的半導體晶片照射雷射束進行加熱，同時紅外線相機240藉由透過部440對半導體晶片進行拍攝。即，紅外線相機240可藉由透過部440準確地測定在50℃至500℃之間變化的半導體晶片的溫度。由於實際對半導體晶片加熱的溫度為200℃至400℃的情況多，因此即使使用在使雷射束透過的同時亦可使此種溫度範圍的紅外線透過的透過部440，亦能夠利用雷射對半導體晶片加熱，同時確認溫度。於此種情況下，與200℃至400℃對應的紅外線的波長大約對應於4微米至6微米。如上所述，由於氟化鋇(BaF2)使雷射束透過的同時亦使與其相同的波長範圍的紅外線透過，因此可用作透過部440的材料。
控制部500可利用在紅外線相機240中所拍攝的值來掌握半導體晶片的不同區域的溫度。控制部500利用紅外線相機240的測定值來控制雷射單元200的雷射頭210的作動。
遮罩更換單元600為收容多個遮罩400的構成，且視需要而為對放置於遮罩放置單元300的遮罩400進行更換的構成。控制部500視需要向遮罩更換單元600傳遞遮罩400更換命令，從而遮罩更換單元600將放置於遮罩放置單元300的遮罩400更換為新的遮罩400。如上所述，檢查燈610設置於遮罩更換單元600，因此藉由作為更換對象的遮罩400配置於檢查燈610的上側的狀態檢查遮罩400是否污染。若控制部500檢查由檢查相機230拍攝的影像的結果判斷為未被污染，則將遮罩400再次傳遞至遮罩放置單元300。於控制部500判斷為遮罩400被污染的情況下，則將污染的遮罩400收容於遮罩更換單元600並引出新的遮罩400傳遞至遮罩放置單元300。
以下，參照圖4及圖5，對遮罩400的構造進行說明。
於本實施例中使用的遮罩400包含遮罩本體410與多個透過孔420及透過部440。
遮罩本體410形成為平板形態。將遮罩本體410製作成與基板的形狀對應的形狀，並考慮到基板的大小而製作成與基板相似的大小。
遮罩本體410形成有多個透過孔420。透過孔420於將要配置於遮罩400下側的基板的半導體晶片的位置對應的位置分 別形成。將透過孔420製作成與半導體晶片的大小及形狀相似的大小及形狀。於本實施例的情況下，使用包含較半導體晶片的大小略微更大地形成的透過孔420的遮罩本體410。
於各個透過孔420形成以分別向內側突出的方式形成的止擋棱430。於本實施例的情況下，如圖4所示，止擋棱430形成為與透過孔420對應的形狀。止擋棱430的形狀可使用除圖4所示的情況以外其他各種形狀。
參照圖5，透過部440分別插入至透過孔420各一個。此時，透過部440的下部以掛於止擋棱430的方式形成。透過部440的下表面形成為平面形態。於藉由加壓單元350的作動而透過部440對各個基板上的半導體晶片進行加壓時，藉由下表面平整地形成的透過部440而均勻地以平面的方式對半導體晶片進行加壓。透過部440包含可透過雷射束的透明材質。如上所述，於本實施例的情況下，透過部440由氟化鋇(BaF2)形成。遮罩本體410由雷射束不能透過的不透明材質形成。遮罩本體410起到如下作用：防止雷射束通過除透過部440之外的區域。
於本實施例的情況下，於透過部440的上表面形成有以凹陷的方式形成的重量槽441。於重量槽441分別配置重量錘442。重量錘442起到如下作用：使藉由透過部440對半導體晶片加壓的力進一步增加。
以下，對根據如上所述般構成的本實施例的覆晶雷射接合系統的作動進行說明。
首先，準備配置有半導體晶片的基板。如上所述，以將半導體晶片臨時接著於基板的方法將配置有半導體晶片的基板自供給單元110依次供給，所述半導體晶片於形成於半導體晶片的下表面的焊料凸塊塗佈有焊劑。
供給單元110將基板供給至固定單元120。固定單元120傳遞接收基板並以吸附下表面的方法固定。
於此種狀態下，雷射單元200的雷射移送部220使檢查相機230在基板之上移動，同時對基板的半導體晶片進行拍攝。控制部500利用自檢查相機230傳遞接收的影像來掌握各半導體晶片的位置。
下面，遮罩更換單元600將遮罩400移送至固定單元120的上側。遮罩放置單元300傳遞接收遮罩400並放置於基板的上側。
於此種狀態下，加壓單元350使固定於固定單元120的基板上升。
若基板藉由加壓單元350上升，則使基板的半導體晶片與各個遮罩400的透過部440的下表面接觸。若加壓單元350使基板繼續上升，則各個半導體晶片相對於遮罩本體410而抬升透過部440。如上所述，由於透過部440為掛於遮罩本體410的止擋棱430的狀態，因此若使半導體晶片繼續上升，則透過部440藉由半導體晶片而被向上側抬升。即，於遮罩本體410靜止的狀態下，僅使透過部440上升。結果，透過部440的負荷傳遞至各半 導體晶片，同時平整地對半導體晶片的上表面進行加壓。此時，如上所述，若於透過部440的重量槽441配置有重量錘442，則按照重量錘442的重量增加對半導體晶片加壓的力的大小。
於此種狀態下，控制部500使雷射單元200作動而依次對基板的半導體晶片進行接合。若雷射移送部220將雷射頭210依次配置於各個半導體晶片上，且雷射頭210照射雷射束，則半導體晶片接合至基板。雷射束透過透過部440與半導體晶片的本體而傳遞至焊料凸塊，使溫度升高而使焊料凸塊接著至基板的接墊。
雷射束瞬間使焊料凸塊的溫度升高，因此具有不使半導體晶片本身的溫度高於所需溫度以上的優點。因此，雷射束於短時間完成焊料凸塊的接合作業，因此具有不將半導體晶片長時間加熱至高溫的優點。此時，即便半導體晶片翹曲或產生熱變形，遮罩400的透過部440亦按壓半導體晶片的上表面，因此具有可防止半導體晶片翹曲或彎曲的優點。如上所述，若防止半導體晶片彎曲，則可防止因半導體晶片的焊料凸塊中的一部分與基板不接合而產生的不良。
如前文所述，雷射束可僅通過遮罩400的透過部440而無法通過遮罩本體410，因此自雷射頭210照射的雷射束僅傳遞至半導體晶片。如上所述，具有如下效果：藉由利用包含透過部440與遮罩本體410的遮罩400，可防止對無需傳遞雷射束的能量的基板部分照射雷射束。
另外，亦可將多個半導體晶片同時接合至基板。若操作雷射頭210而使雷射束的照射面積變寬，則可對兩個以上的半導體晶片同時照射雷射束。由於雷射束無法通過遮罩400的遮罩本體410，因此即便對寬的區域照射雷射束亦可僅對需要接合的半導體晶片傳遞雷射束的能量。藉由以此種方法將多個半導體晶片同時接合至基板，從而可整體上提高製程的生產性。視情況，亦可對遮罩400整體照射雷射束而將半導體晶片整體同時接合至基板。
另一方面，透過部440的配置重量槽441與重量錘442的區域形成於不形成半導體晶片的焊料凸塊的區域。於本實施例的情況下，於半導體晶片的中央部不存在焊料凸塊而僅於半導體晶片的邊緣部分存在焊料凸塊，因此如圖所示，於透過部440的中央部配置重量槽441與重量錘442。
經過如上所述的過程而完成接合的基板自固定單元120傳遞至排出單元130。排出單元130傳遞接收相應基板並傳遞至卸載機。
若遮罩400的使用次數超過固定次數，則控制部500使遮罩更換單元600作動，以便進行污染檢查或進行更換。
例如，於使用遮罩400二十次後，控制部500藉由遮罩更換單元600將遮罩400自遮罩放置單元300移送至檢查燈610的上側。於此種狀態下，控制部500點亮檢查燈610，並藉由檢查相機230對遮罩400進行拍攝。若於遮罩400拍攝影像中發現透過部440受到污染且發現微塵粒子等，則控制部500使遮罩更換 單元600作動以便更換遮罩400。遮罩更換單元600更換污染的遮罩400且將新的遮罩400移送並放置至遮罩放置單元300。於控制部500的檢查結果判定遮罩400未被污染的情況下，將曾存在於檢查燈610上側的遮罩400再次移送至遮罩放置單元300進行再使用。
另一方面，根據本實施例的覆晶雷射接合系統可於遮罩400的透過部440按壓半導體晶片的上表面的狀態下實時測定半導體晶片的溫度變化。先前，使用作為代表性的透明材質的石英構成透過部。於利用紅外線相機藉由石英測定溫度時，不可能測定500℃以下的溫度範圍。如上所述，其原因在於石英無法使波長為3.5微米以上的紅外線透過。根據本實施例的覆晶雷射接合系統，透過部440由氟化鋇(BaF2)形成。氟化鋇(BaF2)可使具有0.15微米至12微米的波長的光透過。即，透過部440可使自具有50℃至500℃之間溫度的物質放射的紅外線全部透過。因此，即便於透過部440對半導體晶片的上表面進行加壓的狀態下，紅外線相機240亦可藉由透過部440準確地測定半導體晶片的溫度。因此，可藉由透過部440照射雷射束來對半導體晶片加熱，同時利用紅外線相機240測定半導體晶片的溫度。
控制部500可利用紅外線相機240實時測定半導體晶片的溫度並反映溫度來控制雷射頭210的作動。於雷射束對半導體晶片進行照射的期間，紅外線相機240藉由遮罩400的透過部440對半導體晶片的溫度進行測定。在因雷射束的照射而焊料凸塊熔 化的過程中，與焊料凸塊鄰接的半導體晶片的溫度亦一同上升。即，紅外線相機240藉由半導體晶片的溫度而間接地測定焊料凸塊的溫度。控制部500接收紅外線相機240所測定的半導體晶片的溫度資訊來實時控制雷射頭210作動。較佳為均勻地對存在於半導體晶片與基板之間的多個焊料凸塊照射雷射束。即，較佳為焊料凸塊的溫度均勻地上升。紅外線相機240測定半導體晶片表面的溫度。控制部500控制雷射頭210的作動，以便對在半導體晶片中表面溫度低的部分以更高的強度照射雷射束。如上所述，控制部500可控制雷射頭210而使所有的焊料凸塊以均勻的溫度上升。該情況即指對所有的焊料凸塊均勻地照射雷射束。於本發明的情況下，可利用可使寬的範圍的紅外線亦透過的透過部440，並利用紅外線相機240實時確認半導體晶片的上表面是否被均勻地加熱。最終，本發明能夠以根據位置均勻地保持雷射束的強度的方式進行控制。
以上，列舉較佳的例子對本發明進行了說明，但本發明的範圍並不限定於前文說明並圖示的形態。
例如，前文對遮罩400的透過部440由氟化鋇(BaF2)形成的情況進行了說明，但亦可利用其他透明材質形成遮罩的透過部。如上所述，於雷射束照射過程中，半導體晶片的溫度在50℃至500℃之間變化。此時，自半導體晶片照射的紅外線的波長為大約3微米以上且9微米以下。因此，可利用使具有3微米以上9微米以下的波長的紅外線透過的各種材質形成透過部。例如，亦 可利用如硒化鋅(ZnSe)的材質構成透過部。硒化鋅(ZnSe)使波長為0.6微米至16微米的紅外線透過。亦可利用如使波長為2微米至16微米的紅外線透過的Ge及其相似的材質形成透過部。
另外，視情況，亦可利用使波長為4微米以上及6.5微米以下的紅外線透過的透過部構成遮罩。此些材質例如CaF2或MgF2。
另外，亦可於透過部塗覆抗反射塗層來使用。於以符合本發明的目的的方式利用使紅外線較佳地透過的材質構成透過部的情況下，根據透過部的材質，雷射束的透過率亦可能相對變低。於此種情況下，亦可將抗反射塗層塗覆於透過部以減少雷射束的反射。如上所述，可以符合本發明的目的的方式構成透過部，藉由在透過部塗覆抗反射塗層，而使用以對半導體晶片加熱的雷射束與用以測定半導體晶片的溫度的紅外線均較佳地透過。
另外，前文對加壓構件使基板上升的情況進行了說明，但亦能夠以加壓構件使遮罩400下降的方法對半導體晶片進行加壓。
另外，前文對在遮罩400的透過部440形成重量槽441並配置重量錘442的情況進行了說明，但亦可使用不包含重量槽441與重量錘442的構造的遮罩400。視情況，亦可使用包含僅包含重量槽與重量錘的透過部的遮罩。
另外，前文對包含遮罩更換單元600的構造的覆晶雷射接合系統列舉為例進行了說明，但亦可構成不包含遮罩更換單元 600的構造的覆晶雷射接合系統。於此種情況下，能夠以如下方式構成覆晶雷射接合系統：亦可不檢查遮罩400是否污染而繼續使用，並以手動作業的方式更換遮罩400來使用。
另外，亦可構成不包含紅外線相機240、檢查燈610、檢查相機230等構造的覆晶雷射接合系統。
110:供給單元
120:固定單元
130:排出單元
200:雷射單元
210:雷射頭
220:雷射移送部
240:紅外線相機
300:遮罩放置單元
350:加壓單元
500:控制部
600:遮罩更換單元

Claims (9)

  1. 一種覆晶雷射接合系統，包括：供給單元，供給基板，所述基板處於配置有用以接合至基板的上表面的多個半導體晶片的狀態；固定單元，自所述供給單元接收所述基板並固定所述基板的下表面；雷射單元，包含對固定於所述固定單元的所述基板照射雷射束而將所述半導體晶片與所述基板接合的雷射頭、及移送所述雷射頭的雷射移送部；遮罩，包含透過部，所述透過部使自所述雷射單元的所述雷射頭照射的所述雷射束透過，並使包含波長為3微米以上且9微米以下的區域帶的紅外線透過；遮罩放置單元，將所述遮罩放置於所述固定單元的上側；加壓單元，使所述遮罩放置單元與所述固定單元中的任一者相對於另一者進行升降，以使所述遮罩的所述透過部能夠對固定於所述固定單元的所述基板的所述多個半導體晶片進行加壓；排出單元，自所述固定單元傳遞接收並排出所述基板；紅外線相機，對由所述雷射單元的所述雷射頭照射所述雷射束的所述半導體晶片進行拍攝；以及控制部，對所述供給單元、所述固定單元、及所述排出單元的作動進行控制，並利用在所述紅外線相機中測定的值對所述雷射單元的所述雷射頭的作動進行控制。
  2. 如申請專利範圍第1項所述的覆晶雷射接合系統，其中所述遮罩的所述透過部使包含波長為4微米以上6.5微米以下的區域帶的紅外線透過。
  3. 一種覆晶雷射接合系統，包括：供給單元，供給基板，所述基板處於配置有用以接合至基板的上表面的多個半導體晶片的狀態；固定單元，自所述供給單元接收所述基板並固定所述基板的下表面；雷射單元，包含對固定於所述固定單元的所述基板照射雷射束而將所述半導體晶片與所述基板接合的雷射頭、及移送所述雷射頭的雷射移送部；遮罩，包含透過部，所述透過部使自所述雷射單元的所述雷射頭照射的所述雷射束透過，且所述透過部由氟化鋇及硒化鋅中的任一者形成；遮罩放置單元，將所述遮罩放置於所述固定單元的上側；加壓單元，使所述遮罩放置單元與所述固定單元中的任一者相對於另一者進行升降，以使所述遮罩的所述透過部能夠對固定於所述固定單元的所述基板的所述多個半導體晶片進行加壓；排出單元，自所述固定單元傳遞接收並排出所述基板；紅外線相機，對由所述雷射單元的所述雷射頭照射所述雷射束的所述半導體晶片進行拍攝；以及控制部，對所述供給單元、所述固定單元、及所述排出單元 的作動進行控制，並利用在所述紅外線相機中測定的值對所述雷射單元的所述雷射頭的作動進行控制。
  4. 如申請專利範圍第3項所述的覆晶雷射接合系統，其中所述紅外線相機於藉由所述雷射單元的所述雷射頭對所述半導體晶片照射所述雷射束時，對所述半導體晶片進行拍攝，所述控制部接收在所述紅外線相機中測定的值而對自所述雷射單元的所述雷射頭照射的所述雷射束的強度進行調節。
  5. 如申請專利範圍第4項所述的覆晶雷射接合系統，更包括遮罩更換單元，所述遮罩更換單元將所述遮罩供給至所述遮罩放置單元或排出所述遮罩。
  6. 如申請專利範圍第4項所述的覆晶雷射接合系統，更包括：檢查燈，從所述遮罩的下側對所述遮罩照射光；以及檢查相機，從上方對所述遮罩或所述基板進行拍攝，所述控制部利用由所述檢查相機對所述遮罩拍攝的影像來判斷所述遮罩是否污染。
  7. 如申請專利範圍第6項所述的覆晶雷射接合系統，其中所述檢查燈設置於所述遮罩更換單元，所述檢查相機設置於所述雷射單元，並藉由所述雷射移送部移送。
  8. 如申請專利範圍第4項所述的覆晶雷射接合系統，其中於所述遮罩的所述多個透過部的上表面分別形成以凹陷的方式形 成的重量槽，所述遮罩更包括放置於所述透過部的所述重量槽的重量錘，以增加對配置於所述基板的所述多個半導體晶片分別加壓的重量。
  9. 如申請專利範圍第4項所述的覆晶雷射接合系統，其中於所述遮罩的所述透過部塗覆有抗反射塗層。
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