CN113937020A - 半导体芯片的激光压缩接合设备及方法 - Google Patents

半导体芯片的激光压缩接合设备及方法 Download PDF

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CN113937020A
CN113937020A CN202011189543.4A CN202011189543A CN113937020A CN 113937020 A CN113937020 A CN 113937020A CN 202011189543 A CN202011189543 A CN 202011189543A CN 113937020 A CN113937020 A CN 113937020A
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bonding
semiconductor chip
bonding tool
substrate
laser beam
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朴宰伸
胡光荣
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Suzhou Zhengqi Semiconductor Equipment Co ltd
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Korea Zhengqi Technology Co ltd
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Abstract

本发明公开了半导体芯片的激光压缩接合设备及方法。提出了用于半导体芯片的激光压缩接合设备和方法。该设备包括：输送器单元(100)，该输送器单元传送半导体芯片和基板；以及接合头(200)，该接合头包括用于向芯片和基板施加压力的接合工具(210)、用于发射激光束的激光束生成器(220)、用于测量半导体芯片和基板的表面的温度的热成像相机(230)、以及用于控制由接合工具(210)施加的压力及其位置的压缩单元(240)，其中压缩单元(240)包括接合工具(210)可拆卸地安装在其上的底座(241)以及向底座(241)施加压力或控制其位置的伺服马达(242)和载荷元件(243)。伺服马达(242)被用于压力施加和定位的两个值控制。

Description

半导体芯片的激光压缩接合设备及方法
相关申请的交叉引用
本申请要求2020年7月14日提交的韩国专利申请No.10-2020-0087077的优先权，该韩国专利申请的全部内容为了所有目的通过引用并入本文。
技术领域
本发明涉及将尺寸为100微米或更小的半导体芯片接合到基板的激光压缩接合设备及激光压缩接合方法，并且特别地，涉及将半导体芯片接合到基板、同时通过控制由接合工具施加的压力和控制其位置来有效地抑制在执行激光接合时发生的半导体芯片与基板的翘曲(warping)的激光压缩接合设备及激光压缩接合方法。
背景技术
一般而言，通过使被称为无铅焊料或Cu柱的凸块(bump)结构经历对流回流(convection reflow)来执行倒装芯片(flipchip)接合处理。当由于回流型结构而导致同时加热基板和半导体芯片时，发生预期的问题。即，当基板被加热并因此膨胀时，由于半导体芯片与基板之间的热膨胀系数的差异，发生半导体芯片的微电路层或凸块被损坏以及因此接合被不正确地执行的现象。
如果数千个凸块中的任一个被损坏，那么在封装功能方面可能发生问题。因此，已经进行了许多努力来防止凸块在经历回流时被损坏。
为了解决该问题，已经关于激光辅助接合技术进行了研究。一般而言，凸块经历回流大约需要5到7分钟。相比之下，在利用激光技术的激光辅助接合期间，仅芯片被加热以用于每个区域接合1-2秒的非常短的时间。因此，仅半导体芯片及其附近维持高温，并且其它区域的温度相对低。半导体芯片和凸块在短时间内被部分地暴露于热，因此对其的热应力相对低。另外，激光接合需要激光接合的安装成本约为现有对流回流的安装成本的七分之一的这样的小空间，这非常低。此外，激光接合不需要N2气体。因此，激光接合在空间利用方面具有优势。
为了最新的半导体IC的集成及其功能的多样化，需要在一个半导体芯片内形成最大数量的凸块焊盘。由于这个原因，减小了凸块焊盘之间的间距。根据重量减小和功能多样化的趋势，基板和半导体芯片也经历了修改和改进，并且目前使用膜型基板。因此，增大了接合面积，同时减小了芯片的厚度，以适合于高密度安装。还增大了2.5D或3D封装应用的比率。
在这种最先进的处理中，基板和芯片被放置在大的热应力下。但是，利用现有的激光接合/焊接技术不容易解决热应力的问题。
前述内容仅旨在帮助理解本发明的背景，并不旨在表示本发明落入本领域技术人员已知的现有技术的范围内。
现有技术文献
(专利文献1)韩国专利No.10-1785092(2017年9月28日注册)
(专利文献2)韩国专利申请公开No.10-2014-0094086(2014年7月30日公开)
(专利文献3)韩国专利No.10-1416820(2014年7月2日注册)
(专利文献4)韩国专利No.10-1143838(2012年4月24日注册)
发明内容
旨在解决上述问题的本发明的目的是提供能够防止由于半导体芯片和基板的翘曲而引起的接合缺陷(非湿(non-wet)现象)的激光压缩接合设备和激光压缩接合方法，该半导体芯片和基板的翘曲是由于热应力和材料之间的热膨胀系数的差异而引起的。这个翘曲是激光接合方法的缺点。
本发明的另一个目的是实现两种解决方案，以在接合处理期间根据需要在一个设备中在加压条件和非加压条件下执行接合，并且因此提高生产率。
本发明的又一个目的是提供一种激光压缩接合方法，该激光压缩接合方法能够通过在加压条件下执行压力控制和位置控制来防止材料翘曲并因此解决接合缺陷的问题。
本发明的又一个目的是提供一种激光压缩接合方法，该激光压缩接合方法能够通过在由石英制成的现有接合工具中形成的用于热成像相机的路径来监测温度，并且因此避免热波长对热成像相机的干扰。
为了实现上述目的，根据本发明的一个方面，提供了一种用于半导体芯片的激光压缩接合设备，该设备包括：输送器单元，被配置为将被接收在预接合区中并且然后在主接合区中对其执行接合的半导体芯片和基板传送到卸载区；以及接合头，该接合头包括：接合工具，被配置为向半导体芯片和基板施加压力；激光束生成器，被安装在接合工具上方并且被配置为发射用于半导体芯片与基板之间的接合的激光束，该激光束穿过接合工具；热成像相机，被配置为测量半导体芯片和基板的每个表面的温度；以及压缩单元，被配置为控制由接合工具施加的压力及其位置，其中压缩单元包括底座，接合工具可拆卸地安装在该底座上；以及伺服马达和载荷元件，伺服马达和载荷元件被配置为在Z-轴方向上向底座施加压力或以精细分级的方式控制其位置，并且伺服马达被用于压力施加和定位的两个目标值控制。
在激光压缩接合设备中，由石英制成的接合工具可以在其上部具有歧管块，并且在其下部具有附件，该歧管块和附件被集成为一件，图像捕获路径可以被形成为以允许朝着热成像相机的热波长沿着图像捕获路径通过的方式在倾斜方向上穿过接合工具，该图像捕获路径以与热成像相机相同的角度倾斜，并且激光束生成器可以发射激光束，并且然后热成像相机可以读取监测半导体芯片和基板的每个表面的温度的结果。
根据本发明的另一方面，提供了一种使用上述激光压缩接合设备将半导体芯片接合到基板的激光压缩接合方法，该方法包括：以高速将接合工具从初始位置向下移动到用于低速启动的预定高度；以低速将接合工具从用于低速启动的高度向下移动到用于最低速启动的高度；以最低速将接合工具从用于最低速启动的高度向下移动到用于与半导体芯片D接触的高度；当接合工具被以最低速向下移动到与半导体芯片D接触的高度并且然后载荷元件检测到对半导体芯片D的压力达到5N/cm2时，确定接合工具与半导体芯片D接触，并且当在5N/cm2的压力处用于接合所需的目标输入值被输入时，使激光束生成器操作以发射激光束，从而执行接合；以及当接合完成时，将接合工具向上移动到用于完成接合操作的高度，从而完成接合操作，其中，当执行接合时，在当执行发射激光束的接合处理时由于材料之间的热膨胀系数的差异而发生热膨胀的区段中，进行从压力控制到瞬时位置控制的切换，从而防止非湿现象。
根据本发明的接合设备包括将半导体芯片压在基板上的接合工具。利用该接合工具，可以防止材料翘曲，并且因此可以维持凸块之间的均匀间距。该接合工具可以是可替换的接合工具。因此，可以根据半导体芯片的条件自由地选择和安装接合工具。因此，可以实现针对半导体芯片优化的加压压力，从而提高接合质量。具体而言，当在加压条件下执行接合时，可以执行压力控制或位置控制。在热膨胀区段中，可以进行从压力控制到位置控制的切换，从而改善接合质量并最小化缺陷率。
附图说明
结合附图，从下面的详细描述中，将更清楚地理解本发明的上述和其它目的、特征和其它优点，其中：
图1是图示根据本发明的激光压缩接合设备的接合头和输送器单元的布置的视图；
图2是图示图1中的接合头的下部的放大图；
图3是图示图2中的接合头的下部的底部的放大图；
图4是用于控制由接合工具施加的压力及其位置的框图；
图5是图示接合头的位置、由接合工具施加的压力和激光束发射之间的相关性的曲线图；
图6是图示根据本发明的由接合工具施加的压力、其位置和激光束发射之间的关系的曲线图；
图7是示出现有技术中的接合缺陷的状态的照片；
图8是示出根据本发明的正常接合的状态的照片；
图9是用于热成像相机的由石英制成的接合工具中形成的图像捕获路径的截面图和平面图；以及
图10是图示当图9中的接合工具被安装时通过激光束和热成像相机监测的半导体芯片的表面的温度状态的视图。
具体实施方式
下面将参考附图详细描述本发明的优选实施例。
图1图示了根据本发明的激光压缩接合设备的示意性配置。图2以放大的方式图示了图1中的接合头的下部。图3以放大的方式图示了图1中的接合头的下部的底部。
如图所示，根据本发明的激光压缩接合设备1包括输送器单元100和接合头200。输送器单元100被配置为将半导体芯片(管芯)D和基板P从预接合区110通过主接合区120传送到卸载区130。半导体芯片D和基板P被接收在预接合区110中。
接合头200包括接合工具210、激光束生成器220、热成像相机230和压缩单元240。接合工具210被配置为向半导体芯片D和基板P施加压力。安装在接合工具210上方的激光束生成器220被配置为发射用于半导体芯片D和基板P之间的接合的激光束。激光束穿过接合工具210。热成像相机230被配置为测量半导体芯片D和基板P的每个表面的温度。压缩单元240被配置为控制由接合工具210施加的压力和接合工具210的位置。
图1中的字母T指示运输托盘，在该运输托盘上半导体芯片D和基板P被嵌套。输送器单元100被配置为传送运输托盘。
根据本发明，当执行接合时，从半导体芯片D发射的红外光穿过接合工具210并到达热成像相机230。因此，热成像相机230实时精确地测量半导体芯片D的表面的温度。由热成像相机230测量温度的表面的面积与由激光束生成器220发射的激光束照明的表面的面积相同或更大。因此，实时地分别精确地测量和检测激光照明区域中的温度分布和温度变化。为了这种精确的检测，接合工具210采用如图9和图10所示的配置。由石英制成的接合工具210在上部具有歧管(manifold)块212，并且在下部具有附件214。歧管块212和附件214被集成为一件。图像捕获路径216被形成为以允许对于热成像相机230的热波长沿着图像捕获路径216通过的方式在倾斜方向上穿过歧管块212和附件214。图像捕获路径216以与热成像相机230相同的角度倾斜。因此，激光束生成器220发射激光束，然后热成像相机230读取监测半导体芯片D和基板P的每个表面的温度的结果。当执行接合时，实时地读取半导体芯片D和基板P的每个表面的温度中的改变，并因此调节由激光束生成器220发射的激光束的强度，从而实时地控制温度。
图像捕获路径216的圆形截面具有大约1.5mm的直径，使得当接合工具210透射由激光束生成器220发射的激光束时，在激光束不受折射和反射的影响的情况下，满足用于测量半导体芯片D的表面温度的条件。
输送器单元100将半导体芯片D和基板P从预接合区110传送到主接合区120。半导体芯片D和基板P通过在输送器单元100下方的预热加热器(未图示)被加热至150℃，然后对其执行接合处理。当接合处理完成时，半导体芯片D和基板P被传送到卸载区130。
如图3所示，设置在接合头200上的视觉对准单元250被配置为对准半导体芯片D的位置。Z-轴轴垂直移动马达260上下移动Z-轴(Z)轴以调节激光束生成器220的操作位置。
激光束生成器220、热成像相机230、视觉对准单元250和Z-轴轴垂直移动马达260在本发明所属领域中是已知的，因此，其详细的图示和描述被省略。
根据本实施例，如图2至图4所示，压缩单元240被配置为包括底座(mount)241、伺服(servo)马达242和载荷元件(loadcell)243。接合工具210可拆卸地安装在底座241上。伺服马达242和载荷元件243被配置为在Z-轴(Z)方向上向底座241施加压力或以精细分级的方式控制底座241的位置。
根据本实施例，伺服马达242基本上被用于压力施加和定位的两个目标值控制。当主计算机发送目标输入信号时，伺服放大器244从指示器245接收载荷元件243的信号，并将接收到的信号传输到运动板246。运动板246将从主计算机接收到的目标输入信号与指示器245的输出值相互比较。然后，伺服放大器244输出马达控制电流，并且因此控制伺服马达242，直到系统压力达到目标压力为止。与目标压力相同的系统压力被稳定地维持。然后，执行随后的接合处理。
附图标记247指示用于将接合工具210与其在底座241内的正确位置对准的千分尺(micrometer)。
每当需要时，如上所述配置的根据本发明的激光压缩接合设备可以在安装压缩单元240之后在加压状态下执行激光接合，或者可以在压缩单元240被拆卸的状态在非加压条件下执行激光接合。这两种解决方案可以在一台激光压缩接合设备中实现。这种实现提供了可以提高生产率的优点。
在非加压条件下的激光接合在本发明所属领域中是已知的，因此其描述被省略。首先，下面将描述当在加压状态下执行激光接合时必须执行的由接合工具210施加的压力的控制及其位置的控制。
即，根据本发明，利用在加压条件下控制由接合工具210施加的压力和控制其位置，可以防止半导体芯片D和基板P翘曲，并且可以解决接合失败问题。压力控制和位置控制描述如下。
图5是以逐步的方式的接合工具210的位置控制的曲线图。首先，Z-轴轴垂直移动马达260以大约10mm/秒的高速将接合头200的接合工具210从初始位置(等待位置)(未图示)向下移动到用于低速启动的预定高度H1(S10)。此时，通过输入相对于接合台S的位置的值来设置用于低速启动的高度H1。
随后，压缩单元240的伺服马达242以大约0.8mm/秒的速度将接合工具210从用于低速启动的高度H1向下移动到用于最低速启动的高度H2(S20)。然后，伺服马达242以大约0.23mm/秒的最低速度将接合工具210从用于最低速度启动的高度H2向下移动到用于与半导体芯片D接触的高度H3(S30)。当接合工具210被向下移动到用于与半导体芯片D接触的高度H3并加压并且载荷元件243检测到对半导体芯片D的压力达到5N/cm2时，确定接合工具210与半导体芯片D接触。然后，当在5N/cm2的压力处用于接合所需的目标输入值(例如，30N/cm2)被输入时，激光束生成器220操作以发射激光束L，从而执行接合(S40)。
当接合完成时，接合工具210被向上移动到用于完成接合操作的高度H4，从而完成接合操作(S50)。
根据本发明，在接合步骤S40中，由接合工具210施加的压力或其位置没有被简单地控制，而是它们被彼此结合地控制。当执行发射激光束的接合处理时，根据材料的热膨胀系数建立发生热膨胀的区段。因此，当仅连续地执行压力控制时，使凸块之间的间距彼此不同，并且使中央的凸块和周边的凸块之间的间距彼此不同。如图7所示，这些差异导致发生所谓的非湿现象。在热膨胀区段中，为了防止非湿现象，进行从压力控制到瞬时位置控制的切换，并且当经过预定时间时，进行返回到目标位置。以这种方式，如图8所示，以执行正常接合的方式执行控制。
即，如从图6可以理解的，在接合步骤S40中，当利用用于接合的激光束照明时，半导体芯片D和基板P接收瞬时能量(50W/cm2)。半导体芯片D由硅制成，并且基板P是由热固性树脂制成的印刷电路板(PCB)。因此，在接收热能时，半导体芯片D和基板P瞬间地膨胀，并且也在Z-轴方向上膨胀。位置控制以精细分级的方式执行，使得当压力从目标输入值上升10％时，接合工具210被向上移动以抵消与压力控制的高度成比例增加的高度。当接合完成时，进行返回到初始目标输入值，并且接合工具210也返回到它先前从其上升的位置。
根据本发明，以精细分级的方式控制接合工具210的位置，使得在通过执行激光接合将尺寸为100微米或更小的半导体芯片D接合到基板P的处理中防止半导体芯片D由于热能而翘曲，即，使得接合工具210被向上移动以抵消在施加压力状态下执行接合时由于在加压条件下的热膨胀而导致的Z轴方向上的高度增加。因此，在凸块之间的高度被均匀地维持的状态下执行接合，从而防止了不能适当地执行接合并且因此发生接合失败的现象。接合工具210可以从压缩单元240的底座241附接或安装在压缩单元240的底座241上，从而在一台设备中在加压条件下和非加压条件下执行两种处理。图像捕获路径被形成以穿过由石英制成的接合工具210，因此接合工具210沿着其中的图像捕获路径透射激光束和红外光，从而实时地测量半导体芯片D的表面温度。提供的优点在于，调节了由激光束生成器220发射的激光束的强度，并且因此实时地控制了温度。
虽然已经出于说明性目的描述了本发明的具体实施例，但是本领域技术人员将认识到，在不脱离所附权利要求中所公开的本发明的范围和精神的情况下，可以进行各种修改、添加和替换。

Claims (4)

1.一种用于半导体芯片的激光压缩接合设备，所述设备包括：
输送器单元(100)，被配置为将被接收在预接合区(110)中并且然后在主接合区(120)中对其执行接合的半导体芯片(D)和基板(P)传送到卸载区(130)；以及
接合头(200)，包括：
接合工具(210)，被配置为向半导体芯片(D)和基板(P)施加压力；
激光束生成器(220)，被安装在接合工具(210)上方并且被配置为发射用于半导体芯片(D)和基板(P)之间的接合的激光束(L)，所述激光束(L)穿过接合工具(210)；
热成像相机(230)，被配置为测量半导体芯片(D)和基板(P)的每个表面的温度；
压缩单元(240)，被配置为控制由接合工具(210)施加的压力及其位置；
视觉对准单元(250)，被配置为对准半导体芯片(D)的位置；以及
Z-轴轴垂直移动马达(260)，其中，
所述压缩单元(240)包括：
底座(241)，所述接合工具(210)能够拆卸地安装在所述底座上；以及
伺服马达(242)和载荷元件(243)，所述伺服马达和载荷元件被配置为在Z-轴(Z)方向上向底座(241)施加压力或以精细分级的方式控制其位置，并且
伺服马达(242)被用于压力施加和定位的两个目标值控制。
2.如权利要求1所述的激光压缩接合设备，其中
由石英制成的接合工具(210)在其上部具有歧管块(212)，并且在其下部具有附件(214)，所述歧管块(212)和附件(214)被集成为一件，
图像捕获路径(216)被形成为以允许朝着热成像相机(230)的热波长沿着图像捕获路径(216)通过的方式在倾斜方向上穿过接合工具(210)，所述图像捕获路径(216)以与热成像相机(230)相同的角度倾斜，并且
激光束生成器(220)发射激光束(L)，并且然后热成像相机(230)读取监测半导体芯片(D)和基板(P)的每个表面的温度的结果。
3.一种使用根据权利要求1或2所述的激光压缩接合设备将半导体芯片接合到基板的激光压缩接合方法，所述方法包括：
步骤(S10)，使Z-轴轴垂直移动马达(260)能够以高速将接合工具(210)从初始位置向下移动到用于低速启动的预定高度(H1)；
步骤(S20)，使压缩单元(240)的伺服马达(242)能够以低速将接合工具(210)从用于低速启动的高度(H1)向下移动到用于最低速启动的高度(H2)；
步骤(S30)，使伺服马达(242)能够以最低速将接合工具(210)从用于最低速启动的高度(H2)向下移动到用于与半导体芯片(D)接触的高度(H3)；
步骤(S40)，当在步骤(S30)中接合工具(210)被向下移动到用于与半导体芯片(D)接触的高度(H3)并且然后载荷元件(243)检测到对半导体芯片(D)的压力达到5N/cm2时，确定接合工具(210)与半导体芯片(D)接触，并且当在5N/cm2的压力处用于接合所需的目标输入值被输入时，使激光束生成器(220)能够操作以发射激光束(L)，从而执行接合；以及
步骤(S50)，当接合完成时，使伺服马达(242)能够将接合工具(210)向上移动到用于完成接合操作的高度(H4)，从而完成接合操作，其中
在步骤(S40)中，在当执行发射激光束(L)的接合处理时发生半导体芯片(D)和基板(P)的热膨胀的区段中，压缩单元(240)从压力控制切换到瞬时位置控制，从而防止非湿现象。
4.如权利要求3所述的激光压缩接合方法，其中
在步骤(S40)中，当发生压力从被输入到压缩单元(240)中的目标输入值增加10％时，切换到位置控制，使得接合工具(210)被向上移动以抵消Z轴方向上的热膨胀，并且
当接合完成时，执行控制，使得返回到初始目标输入值。
CN202011189543.4A 2020-07-14 2020-10-30 半导体芯片的激光压缩接合设备及方法 Pending CN113937020A (zh)

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