TWI693666B - Method and apparatus for mounting semiconductor wafer - Google Patents
Method and apparatus for mounting semiconductor wafer Download PDFInfo
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- TWI693666B TWI693666B TW104142891A TW104142891A TWI693666B TW I693666 B TWI693666 B TW I693666B TW 104142891 A TW104142891 A TW 104142891A TW 104142891 A TW104142891 A TW 104142891A TW I693666 B TWI693666 B TW I693666B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims description 52
- 239000002390 adhesive tape Substances 0.000 claims abstract description 137
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 38
- 238000005520 cutting process Methods 0.000 claims description 15
- 238000011084 recovery Methods 0.000 claims description 14
- 238000003303 reheating Methods 0.000 claims description 9
- 230000032258 transport Effects 0.000 claims description 8
- 230000007723 transport mechanism Effects 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 114
- 238000012546 transfer Methods 0.000 description 18
- 230000002441 reversible effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000010837 adhesive waste Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
在遍及背面形成了環狀凸部的半導體晶圓的該背面與環框之範圍精度佳地貼附支持用黏著帶。 The adhesive tape for support is attached to the range of the back surface and the ring frame of the semiconductor wafer in which the annular convex portion is formed all over the back surface with high accuracy.
在使貼附於環框f的黏著帶T與晶圓W的背面近接對向的狀態下,於一對外殼其中一者收納保持半導體晶圓W,並利用兩外殼挾入黏著帶T以形成腔室。使被黏著帶T區隔的腔室內的2個空間產生差壓,並一邊加熱黏著帶T一邊使之凹入彎曲而貼附於晶圓W的背面。在解消差壓及加熱後將黏著帶T一邊再加熱一邊將黏著帶T貼附於晶圓W。 In a state where the adhesive tape T attached to the ring frame f is closely opposed to the back surface of the wafer W, the semiconductor wafer W is housed and held in one of a pair of housings, and the adhesive tape T is inserted into the two housings to form Chamber. The two spaces in the chamber partitioned by the adhesive tape T generate a differential pressure, and while being heated, the adhesive tape T is concavely bent and attached to the back surface of the wafer W. After eliminating the differential pressure and heating, the adhesive tape T is attached to the wafer W while being heated again.
Description
本發明係有關一種半導體晶圓的安裝方法及半導體晶圓的安裝裝置,係藉由支持用黏著帶將半導體晶圓(以下,適宜地稱為「晶圓」)安裝於環框的中央。 The present invention relates to a method for mounting a semiconductor wafer and a device for mounting a semiconductor wafer. The semiconductor wafer (hereinafter, suitably referred to as a "wafer") is mounted on the center of a ring frame by an adhesive tape for support.
為補強因背面研削而剛性降低的晶圓,保留背面外周而僅研削中央部分。亦即,在晶圓的背面外周形成環狀凸部。在切割處理晶圓之前,藉由支持用黏著帶將該晶圓安裝在環框的中央。 In order to reinforce wafers whose rigidity has been reduced due to backside grinding, only the central part is ground while retaining the outer periphery of the backside. That is, an annular convex portion is formed on the outer periphery of the back surface of the wafer. Before dicing the wafer, the wafer is mounted in the center of the ring frame with adhesive tape.
例如,於設在上下一對外殼之下外殼的保持台載置保持晶圓,包圍下外殼外周的框架保持台保持環框。在該環框貼附黏著帶後,藉由兩外殼挾入環框內側的黏著帶而構成腔室。此時,黏著帶與晶圓背面呈近接對向,所以使被黏著帶區隔的2個空間產生差壓,並以半球狀的彈性體將黏著帶從黏著帶的中央朝外呈放射狀推壓而貼附於晶圓背面。 For example, a wafer is placed and held on a holding table provided under a pair of upper and lower housings, and a frame holding table that surrounds the outer periphery of the lower housing holds a ring frame. After the adhesive tape is attached to the ring frame, the cavity is formed by the two casings being pushed into the adhesive tape inside the ring frame. At this time, the adhesive tape and the back of the wafer are in close proximity, so the two spaces separated by the adhesive tape generate a differential pressure, and the adhesive tape is pushed radially outward from the center of the adhesive tape with a hemispherical elastic body Press and attach to the back of the wafer.
在黏著帶貼附完成後,從第1推壓構件往在環狀凸部的內側角部無法接著而浮起的黏著帶噴吹氣體 以進行第2次的貼附處理(參照專利文獻1)。 After the adhesive tape is attached, gas is blown from the first pressing member to the adhesive tape that cannot float at the inner corner of the annular convex portion In order to perform the second attaching process (refer to Patent Document 1).
[專利文獻1]日本特開2013-232582號公報 [Patent Document 1] Japanese Unexamined Patent Publication No. 2013-232582
就習知的黏著帶貼附方法而言,可使黏著帶密接於環狀凸部的內側角部。然而,在貼附黏著帶後隨著時間經過,會發生黏著帶從該角部朝晶圓中心剝落的問題。 As far as the conventional method of attaching an adhesive tape is concerned, the adhesive tape can be tightly attached to the inner corner of the annular convex portion. However, after the adhesive tape is attached, as time passes, the adhesive tape may peel off from the corner toward the center of the wafer.
本發明係有鑒於這樣的情事而完成者,主要目的在於提供一種半導體晶圓的安裝方法及半導體晶圓的安裝裝置,其係在背面被形成有環狀凸部的半導體晶圓之該背面上有效率地貼附黏著帶,並可抑制該黏著帶從半導體晶圓的背面剝落。 The present invention has been completed in view of such circumstances, and its main object is to provide a semiconductor wafer mounting method and a semiconductor wafer mounting device, which are formed on the back surface of a semiconductor wafer having a ring-shaped convex portion formed on the back surface The adhesive tape is efficiently attached, and the adhesive tape can be suppressed from peeling off from the back surface of the semiconductor wafer.
本發明為達成這樣的目的,採用如下述的構成。 In order to achieve such an object, the present invention adopts the following configuration.
亦即,一種半導體晶圓的安裝方法,係隔著支持用黏著帶將半導體晶圓安裝於環框的半導體晶圓的安裝方法,其特徵為包含:前述半導體晶圓在背面外周具有環狀凸部,在使貼附於前述環框的黏著帶和半導體晶圓的背面近接對向的狀態下,以一對外殼的其中一者所具備的保 持台保持該半導體晶圓,並藉由兩外殼挾入黏著帶以形成腔室的過程;使被前述黏著帶所區隔的外殼內的2個空間產生差壓,並一邊加熱該黏著帶一邊使之凹入彎曲而貼附於半導體晶圓的背面之第1貼附過程;及於解消在前述腔室的差壓及加熱後,將黏著帶一邊再加熱一邊貼附黏著帶的第2貼附過程。 That is, a method of mounting a semiconductor wafer, which is a method of mounting a semiconductor wafer on a ring frame via an adhesive tape, which includes: the semiconductor wafer has a ring-shaped protrusion on the outer periphery of the back surface In the state where the adhesive tape attached to the ring frame and the back surface of the semiconductor wafer are close to each other, the protection provided by one of the pair of housings The stage holds the semiconductor wafer, and the process of forming the chamber by the two casings is carried into the adhesive tape; the two spaces in the casing separated by the aforementioned adhesive tape generate a differential pressure, while heating the adhesive tape The first attaching process of making it concavely bent and attaching to the back of the semiconductor wafer; and after removing the differential pressure and heating in the aforementioned chamber, the second attaching of the adhesive tape while reheating Attached process.
(作用/效果) (Effect)
依據上述方法,加熱使黏著帶軟化。藉由在此狀態使腔室內的2個空間產生差壓,可使黏著帶朝晶圓背面凹入彎曲。亦即,從半導體晶圓的中央朝外周呈放射狀一邊延伸黏著帶一邊貼附。因此,可抑制空氣捲進入黏著帶與半導體晶圓的接著界面。 According to the above method, heating softens the adhesive tape. By generating a differential pressure between the two spaces in the chamber in this state, the adhesive tape can be concavely bent toward the back of the wafer. That is, the adhesive tape is attached while extending the adhesive tape radially from the center to the outer periphery of the semiconductor wafer. Therefore, it is possible to suppress air from entering the bonding interface between the adhesive tape and the semiconductor wafer.
又,伴隨著黏著帶的凹入彎曲,作用於黏著帶的張力係越朝向半導體晶圓的外周變越大。於是,在第1貼附過程被貼附在半導體晶圓的黏著帶係於環狀凸部的內側角部及其近旁整面接觸或部分地接觸而無法密接。 In addition, as the adhesive tape is concavely bent, the tension system acting on the adhesive tape becomes larger toward the outer periphery of the semiconductor wafer. Therefore, the adhesive tape attached to the semiconductor wafer in the first attaching process is in contact or partially in contact with the entire inner corner of the ring-shaped convex portion and its vicinity, and cannot be in close contact.
之後,在因腔室內回復成大氣狀態使差壓解消時,由於貼附時的張力而蓄積在黏著帶的拉伸應力作用於該黏著帶並隨著時間的經過而自角部剝落。在該第1貼附過程的剝落原因係起因於因張力所致彈性變形為主的黏著帶的伸長及無法充分軟化的黏著劑之至少一者。 After that, when the differential pressure is eliminated by returning to the atmospheric state in the chamber, the tensile stress accumulated in the adhesive tape due to the tension during the application acts on the adhesive tape and peels off from the corner as time passes. The cause of peeling in the first attaching process is at least one of the elongation of the adhesive tape mainly elastically deformed due to tension and the adhesive that cannot be sufficiently softened.
然而,藉由在第1貼附過程後的第2貼附過程將黏著帶再加熱,可使以相對於角部近旁的黏著帶塑性 變形為主的變形及使黏著劑充分軟化之至少一者作用,故能抑制黏著帶從半導體晶圓剝落。 However, by reheating the adhesive tape after the first attaching process in the second attaching process, the plasticity of the adhesive tape near the corner can be made At least one of the deformation mainly deformation and the softening of the adhesive sufficiently suppress the peeling of the adhesive tape from the semiconductor wafer.
此外,較佳為,在上述方法中,將半導體晶圓從前述第1貼附過程的腔室搬出一邊搬往不同的保持台一邊將黏著帶暴露在室溫的大氣後,進行在該保持台上一邊加熱半導體晶圓一邊貼附黏著帶的第2貼附過程。 In addition, preferably, in the above method, the semiconductor wafer is carried out from the chamber of the first attaching process while being carried to a different holding table while exposing the adhesive tape to the room temperature atmosphere, and then performed on the holding table The second attaching process of attaching the adhesive tape while heating the semiconductor wafer.
依據此方法,半導體晶圓係在朝其他的保持台搬送過程中黏著帶被暴露在室溫的大氣,黏著帶的基材稍被冷卻而硬化。因此,已密接於半導體晶圓的部分之黏著帶變得易於固著。 According to this method, the adhesive tape is exposed to room temperature atmosphere during the transfer of the semiconductor wafer to other holding tables, and the substrate of the adhesive tape is slightly cooled and hardened. Therefore, the adhesive tape that has been in close contact with the semiconductor wafer becomes easy to be fixed.
又,本發明為達成這樣的目的,採用如下述的構成。 In addition, in order to achieve such an object, the present invention adopts the following configuration.
亦即,一種半導體晶圓的安裝裝置,係隔著支持用黏著帶將半導體晶圓安裝於環框的半導體晶圓的安裝裝置,其特徵為具備:第1保持台,將背面外周具有環狀凸部的前述半導體晶圓保持;框架保持部,保持已貼附前述黏著帶的環框;腔室,收納前述第1保持台且由將貼附於環框的黏著帶夾持的一對外殼所構成;第1加熱器,加熱前述腔室內的黏著帶;第1貼附機構,含有控制部,其使被前述黏著帶所區隔的腔室內的2個空間產生差壓,使被加熱的黏著帶一邊凹入彎曲一邊貼附於半導體晶圓的背面;第2保持台,保持藉由前述第1貼附機構將半導體晶 圓貼附在黏著帶而成的安裝框;第2加熱器,在前述第2保持台上將黏著帶再加熱;以及搬送機構,從前述第1貼附機構將前述安裝框搬往第2保持台。 That is, a semiconductor wafer mounting device is a semiconductor wafer mounting device that mounts a semiconductor wafer to a ring frame via an adhesive tape for support, and is characterized by comprising: a first holding table having a ring shape on the outer periphery of the back surface The semiconductor wafer holding of the convex portion; the frame holding portion, which holds the ring frame to which the adhesive tape is attached; the chamber, which houses the first holding table and is held by a pair of housings that are held by the adhesive tape attached to the ring frame The first heater heats the adhesive tape in the chamber; the first attachment mechanism includes a control unit that generates a differential pressure between the two spaces in the chamber partitioned by the adhesive tape to heat the The adhesive tape is attached to the back surface of the semiconductor wafer while being recessed and bent; the second holding table holds the semiconductor crystal by the first attachment mechanism A mounting frame formed by circularly attaching the adhesive tape; a second heater, which reheats the adhesive tape on the second holding table; and a transport mechanism, which transports the mounting frame from the first attaching mechanism to the second holding station.
(作用/效果) (Effect)
依據此構成,可藉由第1貼附機構將黏著帶貼附於半導體晶圓的背面整體。之後,在第2保持台上已安裝於環框的半導體晶圓係從環狀凸部的內側角部近旁到角部的黏著帶被再加熱。亦即,能僅使無法密接於半導體晶圓的部分與晶圓密接。因此,可適宜實施上述方法。 According to this configuration, the adhesive tape can be attached to the entire back surface of the semiconductor wafer by the first attaching mechanism. After that, the semiconductor wafer mounted on the ring frame on the second holding table is reheated from the vicinity of the inner corner of the annular convex portion to the corner. That is, only the portion that cannot be in close contact with the semiconductor wafer can be in close contact with the wafer. Therefore, the above method can be suitably carried out.
此外,較佳為,在上述構成中,第1貼附機構具備:供應用以被覆環框的大小之黏著帶的帶供應部;將黏著帶貼附於前述環框與外殼其中一者之接合部的帶貼附機構;在前述環框上切斷黏著帶的切斷機構;將被剪成圓形的黏著帶剝離的剝離機構;及回收剝離後的前述黏著帶的帶回收部。 In addition, preferably, in the above-mentioned configuration, the first attaching mechanism includes: a tape supply portion that supplies an adhesive tape of a size to cover the ring frame; and attaches the adhesive tape to one of the ring frame and the housing for bonding Tape attaching mechanism of the part; a cutting mechanism for cutting the adhesive tape on the ring frame; a peeling mechanism for peeling off the adhesive tape cut into a circular shape; and a tape recovery section for recovering the adhesive tape after peeling.
依據此構成,在腔室內將黏著帶貼附於半導體晶圓的背面之過程可將該黏著帶切斷。因此,可縮短黏著帶的貼附時間。 According to this configuration, the process of attaching the adhesive tape to the back surface of the semiconductor wafer in the chamber can cut the adhesive tape. Therefore, the time for attaching the adhesive tape can be shortened.
依據本發明的半導體晶圓的安裝方法及半導體晶圓的安裝裝置,可抑制貼附在背面外周被形成有環狀凸部的半導體晶圓的背面上之支持用黏著帶從該環狀凸部的內側角部剝落。 According to the semiconductor wafer mounting method and the semiconductor wafer mounting device of the present invention, the support adhesive tape attached to the back surface of the semiconductor wafer on the outer periphery of the back surface where the ring-shaped convex portion is formed can be suppressed from the ring-shaped convex portion The inner corner of the flaking.
1‧‧‧搬送機構 1‧‧‧Transport organization
5‧‧‧第1保持台 5‧‧‧ First holding station
6‧‧‧框架供應部 6‧‧‧Frame Supply Department
7‧‧‧反轉單元 7‧‧‧Reverse unit
8‧‧‧第2保持台 8‧‧‧ 2nd holding station
9‧‧‧推頂器 9‧‧‧Ejector
10‧‧‧第1貼附單元 10‧‧‧The first attachment unit
11‧‧‧腔室 11‧‧‧ chamber
11A‧‧‧下外殼 11A‧‧‧Lower shell
11B‧‧‧上外殼 11B‧‧‧Upper case
81‧‧‧帶貼附機構 81‧‧‧With attachment mechanism
82‧‧‧帶切斷機構 82‧‧‧With cutting mechanism
102‧‧‧控制部 102‧‧‧Control Department
W‧‧‧半導體晶圓 W‧‧‧Semiconductor wafer
f‧‧‧環框 f‧‧‧ring frame
T‧‧‧黏著帶 T‧‧‧ Adhesive tape
PT‧‧‧保護帶 PT‧‧‧Protection tape
圖1係半導體晶圓的部份斷裂的立體圖。 FIG. 1 is a perspective view of a semiconductor wafer partially broken.
圖2係半導體晶圓的背面側的立體圖。 2 is a perspective view of the back side of the semiconductor wafer.
圖3係半導體晶圓的部分縱剖視圖。 FIG. 3 is a partial vertical cross-sectional view of a semiconductor wafer.
圖4係顯示半導體晶圓的安裝裝置的構成之俯視圖。 4 is a plan view showing the structure of a semiconductor wafer mounting device.
圖5係半導體晶圓的安裝裝置的前視圖。 5 is a front view of a semiconductor wafer mounting device.
圖6係顯示晶圓搬送機構的一部份的前視圖。 FIG. 6 is a front view showing a part of the wafer transfer mechanism.
圖7係顯示晶圓搬送機構的一部份的俯視圖。 7 is a plan view showing a part of the wafer transfer mechanism.
圖8係晶圓搬送裝置的前視圖。 8 is a front view of the wafer transfer device.
圖9係顯示晶圓搬送裝置的移動構造的俯視圖。 9 is a plan view showing the moving structure of the wafer transfer device.
圖10係框架搬送裝置的前視圖。 Fig. 10 is a front view of the frame transfer device.
圖11係反轉單元的前視圖。 Fig. 11 is a front view of the reversing unit.
圖12係反轉單元的俯視圖。 12 is a plan view of the reversing unit.
圖13係推頂器的前視圖。 Figure 13 is a front view of the ejector.
圖14係推頂器的俯視圖。 Fig. 14 is a top view of the ejector.
圖15係第1貼附單元的前視圖。 Fig. 15 is a front view of the first attaching unit.
圖16係顯示帶貼附部的概略構成的部分剖視圖。 Fig. 16 is a partial cross-sectional view showing a schematic configuration of the tape attaching portion.
圖17係腔室之縱剖視圖。 Figure 17 is a longitudinal sectional view of the chamber.
圖18係帶切斷機構的俯視圖。 Fig. 18 is a plan view of the lace cutting mechanism.
圖19係顯示黏著帶的貼附動作之示意圖。 FIG. 19 is a schematic diagram showing the attaching action of the adhesive tape.
圖20係顯示黏著帶的貼附動作之示意圖。 FIG. 20 is a schematic diagram showing the attaching action of the adhesive tape.
圖21係顯示黏著帶的貼附動作之示意圖。 FIG. 21 is a schematic diagram showing the attaching action of the adhesive tape.
圖22係顯示黏著帶的貼附動作之示意圖。 FIG. 22 is a schematic diagram showing the attaching action of the adhesive tape.
圖23係顯示黏著帶的貼附動作之示意圖。 FIG. 23 is a schematic diagram showing the attaching action of the adhesive tape.
圖24係安裝框之立體圖。 Figure 24 is a perspective view of the mounting frame.
圖25係第2貼附處理之示意圖。 FIG. 25 is a schematic diagram of the second attaching process.
圖26係顯示在實施例裝置和比較例裝置所實施之剝 落測定結果的比較圖。 Fig. 26 shows the peeling carried out in the example device and the comparative example device Comparison chart of drop measurement results.
圖27係測定黏著帶的鬆弛之示意圖。 Fig. 27 is a schematic diagram for measuring the relaxation of the adhesive tape.
圖28係顯示在實施例裝置和比較例裝置所實施之鬆弛測定結果的比較圖。 FIG. 28 is a comparison chart showing the results of relaxation measurement performed in the device of the example and the device of the comparative example.
以下,參照圖面說明本發明實施例。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
<半導體晶圓> <semiconductor wafer>
如圖1至3所示,半導體晶圓W(以下,僅稱為「晶圓W」)係於形成有圖案的表面貼附著保護帶PT使表面被保護的狀態進行背面研削處理者。其背面係以外周部在徑方向保留約2mm的方式作研削(背面研削;Back grinding)。亦即,使用在背面形成有扁平凹部b並沿著其外周加工成殘存有環狀凸部r的形狀者。例如,被加工成扁平凹部b的深度d為數百μm,研削區域的晶圓厚度t為數十μm。因此,形成在背面外周的環狀凸部r係作為提高晶圓W的剛性的環狀肋而發揮作用,抑制晶圓W在搬運(handling)或其他的處理工程中之撓曲變形。 As shown in FIGS. 1 to 3, a semiconductor wafer W (hereinafter, simply referred to as “wafer W”) is a back surface grinding process in which a protective tape PT is attached to a patterned surface to protect the surface. The back surface is ground so that the outer periphery retains approximately 2 mm in the radial direction (back grinding). That is, a shape in which the flat concave portion b is formed on the back surface and processed along the outer periphery into the shape in which the annular convex portion r remains is used. For example, the depth d processed into the flat concave portion b is hundreds of μm, and the wafer thickness t of the grinding area is tens of μm. Therefore, the annular convex portion r formed on the outer periphery of the back surface functions as an annular rib that increases the rigidity of the wafer W, and suppresses the flexural deformation of the wafer W during handling or other processing processes.
<半導體晶圓的安裝裝置> <Semiconductor wafer mounting device>
圖4顯示半導體晶圓的安裝裝置之俯視圖。 FIG. 4 shows a top view of a semiconductor wafer mounting device.
如圖4所示,此安裝裝置係構成為具備:由橫長的矩形部A和在此矩形部A的中央部連接並往上側突出的突出部B所成之構成為凸形的基本單元;及在突出部B的左橫的空間連結於基本單元之標記單元C。此外,在以下的說明中,將矩形部A的長邊方向稱為左右方向,與此正交的水平方向稱為下側及上側。 As shown in FIG. 4, this mounting device is configured to include: a basic unit formed by a horizontally long rectangular portion A and a protruding portion B connected to the central portion of the rectangular portion A and protruding upward; And the space on the left side of the protrusion B is connected to the marking unit C of the basic unit. In the following description, the longitudinal direction of the rectangular portion A is referred to as the left-right direction, and the horizontal direction orthogonal to this is referred to as the lower side and the upper side.
在矩形部A的右側配備晶圓搬送機構1。在矩形部A下側靠右處有收容著晶圓W的2個容器2並列地載置著。在矩形部A的下側左端配備用以將完成晶圓W安裝的圖24所示的安裝框MF回收的回收部3。
The
從矩形部A的上側右邊依序配備有對準器4、第1保持台5、框架供應部6及反轉單元7。於反轉單元7的下方配備有後述的第2保持台8。又,配備在反轉單元7的上方滑移的推頂器9。
From the upper right side of the rectangular portion A, the aligner 4, the first holding table 5, the
突出部B係構成為將支持用黏著帶T(切割帶)貼附於環框f並將該黏著帶T貼附於晶圓W的第1貼附單元10。
The protrusion B is configured as the first attaching
如圖5所示,晶圓搬送機構1備有:於矩形部A的上部呈左右水平架設的導軌14的右側支持成可左右往復移動的晶圓搬送裝置15;及在導軌14左側被支持成可左右移動的框架搬送裝置16。
As shown in FIG. 5, the
晶圓搬送裝置15建構成:可將從容器2之任一方取出的晶圓W往左右及前後搬送並將晶圓W的姿勢表背反轉。
The
如圖6及圖8所示,晶圓搬送裝置15裝備有可沿著導軌14左右移動的左右移動可動台18。沿著此左右移動可動台18所配備的導軌19裝置可前後移動的前後移動可動台20。而且,在此前後移動可動台20的下部裝置可上下移動之用以保持晶圓W的保持單元21。
As shown in FIGS. 6 and 8, the
如圖6及圖7所示,在導軌14的近右端處支撐由馬達22驅動正反轉的主動皮帶輪23並在導軌14的中央
側支撐從動皮帶輪24的軸。在跨此等主動皮帶輪23與從動皮帶輪24繞掛的皮帶25上連結著左右移動可動台18的滑動卡合部18a,藉由皮帶25的正反旋動使左右移動可動台18被左右移動。
As shown in FIGS. 6 and 7, the
如圖9所示,在左右移動可動台18近上端處支撐藉馬達26驅動正反轉的主動皮帶輪27的軸並在左右移動可動台18的近下端處支撐從動皮帶輪28的軸。在跨此等主動皮帶輪27與從動皮帶輪28繞掛的皮帶29上連結有前後移動可動台20的滑動卡合部20a,藉由皮帶29的正反旋動使前後移動可動台20被前後移動。
As shown in FIG. 9, the shaft of the driving
如圖8所示,保持單元21由以下所構成:呈倒L字形之支持框架30,連結於前後移動可動台20的下部;升降台32,藉由馬達31沿著此支持框架30的縱框部被螺紋進行進給升降;旋動台34,軸被支撐於升降台32且藉由旋動軸33可繞縱向支軸p旋動;藉由皮帶35繞掛於旋動軸33而連動之旋動用馬達、軸被支撐於旋動台34下部且藉由旋動軸37可繞水平方向的支軸q反轉旋動的保持臂38;及藉由皮帶39繞掛於旋動軸37而連動之反轉用馬達40等。
As shown in FIG. 8, the holding
保持臂38作成馬蹄形。在保持臂38的保持面設有稍突出的複數個吸附墊41。又,保持臂38經由形成在其內部的流路與在此流路的基端側連接的連接流路而被連通連接於空壓裝置。
The holding
藉由利用上述的可動構造,成為可利用保持臂38將所吸附保持的晶圓W前後移動、左右移動及繞縱
向支軸p旋動移動,並依繞圖8所示的水平方向支軸q反轉旋動而將晶圓W表背反轉。
By using the movable structure described above, it becomes possible to move the sucked and held wafer W back and forth, left and right, and around the longitudinal direction by the holding
如圖10所示,框架搬送裝置16由以下所構成:連結於前後移動可動台43的下部之縱框44;沿著此縱框44可滑動升降地支持的升降框45;使升降框45上下移動的伸縮連桿機構46;將此伸縮連桿機構46正反伸縮驅動的馬達47;裝置在升降框45的下端用以吸附晶圓W的吸附板48;及為了吸附環框f而繞該吸附板48配備的複數個吸附墊49等。因此,框架搬送裝置16係將載置保持於第1保持台5的環框f及安裝框MF吸附保持,可升降及前後左右搬送。吸附墊49係對應於環框f的尺寸可在水平方向滑動調節。
As shown in FIG. 10, the
如圖15至圖17所示,第1保持台5係為具有和晶圓W同形狀以上的大小之金屬製的夾盤台,且經由流路94和外部的真空裝置95連通連接。又,第1保持台5係裝備有複數根的支持用銷50。
As shown in FIGS. 15 to 17, the first holding table 5 is a metal chuck table having the same shape as the wafer W or more, and is connected to the
銷50係於第1保持台5的既定的圓周上取等間隔配備。亦即,銷50建構成透過氣缸等之致動器於第1保持台5的保持面進出地升降。此外,銷50的前端以絕緣物構成或被絕緣物所被覆。
The
此第1保持台5形成有僅將晶圓W的外周區域抵接支持的環狀凸部。且在內部埋設加熱器107。又,第1保持台5被收納在構成後述的腔室11之下外殼11A。下外殼11A具備包圍該下外殼11A外周的框架保持部51。框架保持部51建構成在載置環框f時,環框f與下外殼11A的
圓筒頂部形成為平坦。
This first holding table 5 is formed with an annular convex portion that only abuts and supports the outer peripheral region of the wafer W. And the
此外,如圖4所示,第1保持台5係建構成可藉由未圖示的驅動機構沿著鋪設在設定矩形部A的晶圓W之位置與突出部B的第1帶貼附單元10的貼附位置之間的軌道58往復移動。
In addition, as shown in FIG. 4, the first holding table 5 is constructed as a first tape attaching unit that can be placed along the position of the wafer W and the protruding portion B laid on the set rectangular portion A by a drive mechanism (not shown) The
框架供應部6係將收納著既定片數的環框f的拉出式匣收納並積層。
The
如圖11及圖12所示,反轉單元7為,在沿著豎立固定的縱軌道59可升降的升降台60,藉由旋轉致動器61可繞水平支軸r旋動的支承框62呈懸臂狀裝設,且在支承框62的基部和前端部分別裝置可繞支軸s旋動的夾爪63。反轉單元7係在將電路面朝下的安裝框MF從框架搬送裝置16接取並反轉後,使電路圖案面朝上。
As shown in FIGS. 11 and 12, the reversing
第2保持台8係在反轉單元7的正下方的安裝框MF之接取位置和標記單元C的印字位置之間沿著軌道58C往復移動。如圖25所示,第2保持台8係可吸附保持安裝框MF的背面整體之大小的夾盤台。該第2保持台8係以金屬製或陶瓷的多孔質形成。此外,在第2保持台8埋設有加熱器。
The second holding table 8 reciprocates along the
推頂器9係使被載置於第2保持台8的安裝框MF收納在安裝框回收部3。其具體的構成顯示於圖13及圖14。
The
推頂器9係在沿著軌道64左右水平移動的可動台65的上部具備有固定支承片66和藉由氣缸67開閉的夾片68。建構成以此等固定支承片66與夾片68將安裝框
MF的一端部由上下挾持。又,在藉由馬達69旋動的皮帶70連結著可動台65的下部,形成藉由馬達69之正反作動使可動台65左右往復移動。
The
如圖15所示,第1貼附單元10係由帶供應部71、分離片回收部72、帶貼附部73及帶回收部74等所構成。以下,針對各構成作詳述。
As shown in FIG. 15, the
帶供應部71係建構成:在從裝填有捲繞著支持用黏著帶T的原材輥之供應筒管將該黏著帶T供應至貼附位置的過程中利用剝離輥75剝離分離片S。此外,供應筒管係與電磁煞車連動連結而被施加適度的旋轉阻力。藉以防止從供應筒管抽出過剩的帶。
The
又,帶供應部71係建構成:藉由搖動被連結於氣缸76的搖動臂77而用前端的張力輥78將黏著帶T往下方壓下以賦予張力。
In addition, the
分離片回收部72係備有將從黏著帶T剝離的分離片S捲取的回收筒管。此回收筒管係被控制成藉由馬達驅動正反地旋轉。
The
帶貼附部73係由腔室11、帶貼附機構81及帶切斷機構82等所構成。此外,帶貼附機構81相當於本發明的貼附機構,帶切斷機構82相當於切斷機構。
The
腔室11係由矩形部A、往復移動於帶貼附部73的下外殼11A及構成為在突出部B可升降的上外殼11B所構成。兩外殼11A、11B係具有比黏著帶T的寬度還小的內徑。此外,下外殼11A的圓筒上部具有圓度,並被施予氟加工等之離型處理。
The
如圖16所示,上外殼11B係配備於升降驅動機構84。此升降驅動機構84具備:沿著在縱壁85的背部縱向配置之軌道86可移動的升降台87;及可調整高度地支持於此升降台87的可動框88,自此可動框88朝前方延伸出的臂89。在自此臂89的前端部朝下方延伸出的支軸90裝設有上外殼11B。
As shown in FIG. 16, the
升降台87係形成藉由馬達92使螺桿91正反轉而進行升降進給。
The lift table 87 is formed so that the
如圖17所示,兩外殼11A、11B經由流路94和真空裝置95連通連接。此外,在上外殼11B側的流路94具備電磁閥96。又,兩外殼11A、11B各自連通連接具備大氣開放用電磁閥97、98的流路99。更在上外殼11B連通連接具備將暫時減壓的內壓漏泄以作調整的電磁閥100的流路101。此外,此等電磁閥96、97、98、100的開閉操作及真空裝置95的作動係由控制部102所進行。
As shown in FIG. 17, the two
回到圖15,帶貼附機構81係由以下構成:導軌105,架設於包夾第1保持台5而豎立設於裝置基台103的左右一對的支持框架104;可動台106,沿著導軌105左右水平移動;貼附輥109,其軸被連結於此可動台106所備有之氣缸前端的托架所支撐;及夾輥110,配備於帶回收部72側。
Returning to FIG. 15, the
可動台106係建構成:藉由軸被繞掛在固定配備於裝置基台103的驅動裝置所支撐之正反轉的主動皮帶輪111與軸被支持框架104側所支撐之從動皮帶輪112的皮帶113而被傳達驅動,沿著導軌105左右水平移動。
The movable table 106 is constituted by a belt that is wound around a forward and reverse driving
夾輥110係由利用馬達驅動的進給輥114和利用氣缸升降的壓輥115所構成。
The
如圖16所示,帶切斷機構82係配備於使上外殼11B升降的升降驅動機構84。亦即,具備藉由軸承116而繞支軸90旋轉的輪轂(boss)部117。如圖18所示,在此輪轂部117具備在中心徑向延伸的4根支持臂118至121。
As shown in FIG. 16, the
於一支持臂118的前端裝設有將圓板形的刀具122的軸支撐成水平之可上下移動的刀具托架123,並於其他的支持臂119至121的前端裝設有透過搖動臂125可上下移動的推壓輥124。
At the front end of a
在輪轂部117的上部具有連結部126,和在此連結部126的臂89所具備之馬達127的旋轉軸驅動連結。
A
如圖15所示,帶回收部74係備有將切斷後被剝離的廢料黏著帶T捲取的回收筒管。此回收筒管係被控制成藉由未圖示的馬達驅動正反地旋轉。
As shown in FIG. 15, the
標記單元C係建構成以光學感測器等的讀取器讀取被刻印在晶圓W的ID,將該ID例如以二維或三維方式條碼化,印刷該條碼進行貼附。 The marking unit C is configured to read an ID engraved on the wafer W with a reader such as an optical sensor, and barcode the ID in a two-dimensional or three-dimensional manner, for example, and print and attach the barcode.
如圖5所示,回收部3係配備有將安裝框MF積載並回收的匣130。此匣130備有:連結固定於裝置框架131的縱軌道132;及沿著此縱軌道132利用馬達133進行螺紋進給升降的升降台134。因此,回收部3建構成將安裝框MF載置於升降台134並進行節距進給下降。
As shown in FIG. 5, the
接著,針對使用上述實施例裝置將晶圓W隔著黏著帶T安裝於環框f的動作進行說明。 Next, the operation of mounting the wafer W on the ring frame f via the adhesive tape T using the apparatus of the above embodiment will be described.
從框架供應部6朝下外殼11A的框架保持部51搬送環框f與從容器2朝第1保持台5搬送晶圓W係被同時執行。
The transfer of the ring frame f from the
一框架搬送裝置16係從框架供應部6吸附環框f並移載至框架保持部51。當框架保持部51解除吸附而上升時,藉由支持銷進行環框f的對位。亦即,環框f係待機直到在被設定於框架保持部51的狀態下晶圓W被搬來為止。
A
另一方的搬送裝置15係將保持臂38插入被多段收納的晶圓W彼此間,從晶圓W的電路形成面隔著保護帶PT吸附保持並搬出,搬送到對準器4。
The
對準器4係利用從其中央突出的吸附墊對晶圓W的中央進行吸附。同時,搬送裝置15係解除晶圓W的吸附並往上方退避。對準器4係以吸附墊保持晶圓W並一邊使其旋轉一邊依據切痕等進行對位。
The aligner 4 sucks the center of the wafer W using a suction pad protruding from the center. At the same time, the
當對位完成時,使吸附著晶圓W的吸附墊從對準器4的面突出。搬送裝置15移往其位置,將晶圓W從表面側吸附保持。吸附墊係解除吸附並下降。
When the alignment is completed, the adsorption pad that adsorbs the wafer W protrudes from the surface of the aligner 4. The
搬送裝置15係移往第1保持台5上,將帶有保護帶的面維持朝下而將晶圓W轉交從第1保持台5突出的支持用銷50。銷50係在接取晶圓W時下降。
The
第1保持台5及框架保持部51係在吸附晶圓W、框架保持部51將環框f吸附保持時,下外殼11A沿著軌道58朝帶貼附機構82側移動。
When the first holding table 5 and the
如圖19所示,當下外殼11A到達帶貼附機構
82的帶貼附位置時貼附輥109下降,如圖20所示,在黏著帶T上一邊轉動一邊在遍及環框f與下外殼11A的頂部之範圍貼附黏著帶T。來自帶供應部71既定量的黏著帶T之分離片S與此貼附輥109的移動連動地一邊剝離一邊被抽出。
As shown in FIG. 19, when the
如圖21所示,當朝環框f貼附黏著帶T完成時,上外殼11B下降。隨著此下降,將從晶圓W的外周在環框f的內徑之間黏著面露出的黏著帶T利用上外殼11B與下外殼11A挾持而構成腔室11。此時,黏著帶T作為密封材發揮機能,並將上外殼11B側和下外殼11B側分割而形成2個空間。
As shown in FIG. 21, when the adhesive tape T is attached to the ring frame f, the
位在下外殼11A內的晶圓W係和黏著帶T具有既定的間隙而呈近接對向。
The wafer W and the adhesive tape T positioned in the
控制部102係使加熱器107作動而從下外殼11A側加熱黏著帶T,並在關閉圖16所示的電磁閥97、98、100的狀態下使真空裝置95作動而對上外殼11B內和下外殼11A內進行減壓。此時,以兩外殼11A、11B內以相同速度持續減壓的方式調整電磁閥96的開度。
The
當兩外殼11A、11B內被減壓到既定的氣壓時,控制部102係關閉電磁閥96並停止真空裝置95的作動。
When the pressure in the two
控制部102係調整電磁閥100的開度一邊使漏泄一邊使上外殼11B內慢慢提高到既定的氣壓。此時,下外殼11A內的氣壓變得比上外殼11B內的氣壓低,因其差壓,如圖22所示,黏著帶T從其中心被吸入下外殼11A側。亦即,黏著帶T係一邊凹入彎曲一邊從晶圓W的中心
朝外周呈放射狀貼附。此時,環狀凸部r的內側的角部的空氣被放掉,在間隙被破壞的狀態下黏著帶T會接著。
The
當上外殼11B內達到預設的氣壓時,控制部102係調整電磁閥98的開度將下外殼11A內的氣壓設成與上外殼11B內的氣壓相同。之後,如圖23所示,控制部102使上外殼11B上升將上外殼11B內設為大氣開放,並將電磁閥98全開使下外殼11A側亦設成大氣開放。
When the preset air pressure is reached in the
此外,在腔室11內將黏著帶T貼附於晶圓W的期間,帶切斷機構82作動。此時,如圖21及圖22所示,刀具122將貼附於環框f的黏著帶T切斷成環框f的形狀,且推壓輥124會追隨刀具122將環框f上的帶切斷部位一邊轉動一邊推壓。亦即,上外殼11B下降藉由下外殼11A構成腔室11時,如圖15所示,帶切斷機構82的刀具122與推壓輥124亦到達切斷作用位置。
In addition, while the adhesive tape T is attached to the wafer W in the
由於在使上外殼11B上升的時點朝向晶圓W的黏著帶T的第1構件及黏著帶T之切斷正完成,故使壓輥115上升以解除黏著帶T的夾持。之後,使夾輥115移動並朝向帶回收部74將切斷後的廢料黏著帶T捲取回收,並從帶供應部71抽出既定量的黏著帶T。
Since the cutting of the first member of the adhesive tape T toward the wafer W and the adhesive tape T is being completed when the
當黏著帶T的剝離完成,夾輥115及貼附輥109回到初期位置時,如圖23所示,在保持著環框f與背面接著著黏著帶T的安裝框MF之狀態,下外殼11A係往矩形部A側的搬出位置移動。
When the peeling of the adhesive tape T is completed and the
已到達搬出位置的安裝框MF係從框架搬送裝置16被轉交予反轉單元7。反轉單元7係在保持著安裝
框MF的狀態下上下反轉。亦即,電路圖案面成為朝上。反轉單元7係如圖25所示,以將安裝框MF上下反轉的狀態載置於第2保持台8。
The mounting frame MF that has reached the unloading position is transferred from the
晶圓W係依埋設於第2保持台8的加熱器108的再加熱而被執行第2貼附處理。此處理時間被設定成與藉腔室11進行第1貼附處理的時間相同。當第2貼附處理完成時,第2保持台8係沿著軌道58C朝標記單元C的印字位置(標籤貼附位置)移動。當第2保持台8到達貼附位置時,利用光學感測器或相機等讀取被刻印在晶圓W的ID。標記單元C係作成與該ID相應的標籤並貼附於晶圓W。
The wafer W is subjected to the second attaching process in accordance with the reheating of the
當標籤的貼附完成時,第2保持台8朝矩形部A側的搬出位置移動。當第2保持台8到達搬出位置時,推頂器9把持安裝框MF,將安裝框MF朝回收部3搬送。
When the attachment of the label is completed, the second holding table 8 moves toward the carrying-out position on the side of the rectangular portion A. When the second holding table 8 reaches the unloading position, the
以上係結束隔著黏著帶T將晶圓W安裝於環框f的一輪的動作。以後,反復上述處理直到安裝框MF達到既定數為止。 This concludes one round of mounting the wafer W on the ring frame f via the adhesive tape T. Thereafter, the above processing is repeated until the mounting frame MF reaches a predetermined number.
茲就使用上述實施例裝置藉由第1貼附單元10在未加熱黏著帶之下進行第1貼附處理的比較例、及以第1貼附單元10一邊加熱黏著帶一邊進行第1貼附處理後於第2保持台8進行基於再加熱的第2貼附處理的實施例進行了比較實驗。
Here is a comparative example where the device of the above embodiment is used to perform the first attaching process by the first attaching
所利用的晶圓W係採用如上述在背面形成了環狀凸部r的200mm者。又,在晶圓W的表面貼設有保護帶PT。黏著帶使用日東電工(股)的WS-01。本實施例中的貼附條件為,第1貼附過程是利用在腔室11內的差壓及加
熱,第2貼附過程是利用在第2保持台8僅朝晶圓W再加熱。在第1及第2貼附過程一邊施加差壓一邊以80℃進行1分鐘的加熱。比較例的貼附條件為,在腔室11不加熱下施加1分鐘的差壓將黏著帶T貼附於晶圓W。
As the wafer W to be used, a 200 mm wafer having a ring-shaped convex portion r formed on the back surface is used. In addition, a protective tape PT is attached to the surface of the wafer W. Nitto Denko's WS-01 was used for the adhesive tape. The attaching condition in this embodiment is that the first attaching process is to use the differential pressure in the
在以該條件貼附黏著帶T後所產生的黏著帶剝落之結果顯示於圖26。亦即,測定在貼附處理的完成後隨即在室溫經過72小時為止所產生的剝落。此外,剝落係以從凸部內側角部朝晶圓中心剝落而形成的圖25所示之空隙200的距離作測定。 The result of peeling of the adhesive tape after attaching the adhesive tape T under this condition is shown in FIG. 26. That is, the peeling generated after 72 hours at room temperature immediately after the completion of the attaching process was measured. In addition, the peeling is measured by the distance of the void 200 shown in FIG. 25 formed by peeling from the inner corner of the convex portion toward the center of the wafer.
測定的結果,在貼附之後,本實施例及比較例均為在黏著帶未密接下產生的空隙是0.05mm。然而,隨著時間經過,比較例係黏著帶T的剝落擴大,在最終的72小時後達到0.6mm。 As a result of the measurement, after the attachment, the voids generated in the present example and the comparative example when the adhesive tape was not in close contact were 0.05 mm. However, with the passage of time, the peeling of the adhesive tape T in the comparative example expanded and reached 0.6 mm after the final 72 hours.
相對地,本實施例中,剝落係在48小時後收斂成為0.3mm。因此,相對於比較例改善了50%。 In contrast, in this example, the peeling system converged to 0.3 mm after 48 hours. Therefore, it is improved by 50% relative to the comparative example.
如上述,依據本實施例,藉由在第2保持台一邊再加熱一邊進行第2貼附處理,可使在環狀凸部r的內側角部近旁無法密接的黏著帶T軟化並密接。因此,可抑制在貼附處理後黏著帶T自角部剝落並擴大。 As described above, according to the present embodiment, by performing the second attaching process while reheating the second holding table, the adhesive tape T that cannot be adhered near the inner corner of the annular convex portion r can be softened and adhered. Therefore, it is possible to suppress the peeling and expansion of the adhesive tape T from the corner after the attaching process.
又,在以同一條件進行3次實驗後分別測定黏著帶T的鬆弛。具體言之,如圖27所示,載置安裝框MF的環框f,測定依晶圓W的自重而陷入的距離作為黏著帶的鬆弛。具體言之,係將無鬆弛的基準距離設為H1,加上從該H1更下降的H2的距離而求得。此外,測定係在晶圓W的中心進行。 In addition, after performing the experiment three times under the same conditions, the relaxation of the adhesive tape T was measured. Specifically, as shown in FIG. 27, the ring frame f of the mounting frame MF is placed, and the distance to be plunged by the weight of the wafer W is measured as the slack of the adhesive tape. Specifically, it is obtained by taking the reference distance without slack as H1 and adding the distance of H2 further decreasing from H1. In addition, the measurement is performed at the center of the wafer W.
其結果顯示於圖28。亦即,在比較例的無加熱而僅依差壓進行1次的貼附處理的情況的鬆弛之平均為3.7mm。相對地,依本實施例的差壓與加熱及再加熱而進行2次的貼附處理的情況的鬆弛之平均為1.3mm。亦即,如本實施例藉由進行2次的貼附處理,使於第1次的貼附時產生的黏著帶T之鬆弛因第2次的貼附時之加熱而改善。亦即,因上下一對的外殼夾入而彈性變形所致之鬆弛係依加熱使彈性變形回復到接近原本的狀態。因此,藉由改善該鬆弛,可於後工程的切割處理中,精度佳地分斷成晶片。 The results are shown in Figure 28. That is, in the comparative example, the average relaxation of the case where the application process is performed only once at the differential pressure without heating is 3.7 mm. On the other hand, the average of the slack in the case of performing the attaching process twice according to the differential pressure and heating and reheating of this example is 1.3 mm. That is, as in this embodiment, by performing the attaching process twice, the relaxation of the adhesive tape T generated during the first attaching process is improved by the heating during the second attaching process. That is to say, the relaxation caused by the elastic deformation caused by the sandwiching of the upper and lower casings is caused by the heating to restore the elastic deformation to the original state. Therefore, by improving the slack, it is possible to break into wafers with high accuracy in the cutting process of the post-process.
此外,本實施例裝置中,因為在不同的位置進行第1貼附處理和第2貼附處理,所以比在同一部位作處理還能更有效率地處理。 In addition, in the device of the present embodiment, since the first attaching process and the second attaching process are performed at different positions, they can be processed more efficiently than the same site.
此外,本發明亦能用以下的形態實施。 In addition, the present invention can be implemented in the following forms.
上述實施例裝置中,亦可建構成在上外殼11B埋設加熱器,將黏著帶T從上下加熱。
In the device of the above embodiment, a heater may be built in the
8‧‧‧第2保持台 8‧‧‧ 2nd holding station
108‧‧‧加熱器 108‧‧‧heater
200‧‧‧空隙 200‧‧‧Gap
f‧‧‧環框 f‧‧‧ring frame
T‧‧‧黏著帶 T‧‧‧ Adhesive tape
W‧‧‧晶圓 W‧‧‧ Wafer
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TW201209904A (en) * | 2010-08-26 | 2012-03-01 | Lintec Corp | Sheet attaching device and attaching method |
JP2013232582A (en) * | 2012-05-01 | 2013-11-14 | Nitto Denko Corp | Method of applying adhesive tape and adhesive tape applying apparatus |
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CN111261590A (en) | 2020-06-09 |
KR102157458B1 (en) | 2020-09-17 |
KR20160078874A (en) | 2016-07-05 |
TW202011510A (en) | 2020-03-16 |
JP2016122763A (en) | 2016-07-07 |
KR20200024188A (en) | 2020-03-06 |
CN105742241A (en) | 2016-07-06 |
TW201635418A (en) | 2016-10-01 |
JP6636696B2 (en) | 2020-01-29 |
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