TWI690949B - Blackened metal grid structure and manufacturing method thereof - Google Patents

Abstract

A blackened metal grid structure, including a substrate, at least one metal layer and at least two black 化层。 The layer. The substrate includes a first surface and a second surface. The metal layers are formed on the first surface and the second surface of the substrate, or one of the first surface and the second surface, the metal layers have wiring, and the metal layers are not in contact with other metals The corresponding positions of the layers overlap. The number of the blackened layer is twice that of the metal layer. The present invention further discloses a blackened metal grid structure. With the above-mentioned structure and method, the present invention uses the blackened layers to cover the lines of the metal layers to control the gray scale and thickness of the blackened layers.

Description

Blackened metal grid structure and manufacturing method thereof

The invention is a blackened metal grid structure and a manufacturing method thereof, in particular to a blackened metal grid structure using a blackened layer to cover a circuit of a metal layer to control the gray scale and thickness of the blackened layer and a manufacturing method thereof .

The current metal grid structure, such as the Republic of China Patent Announcement No. I504697, discloses a blackening coating and electrode structure using the same, in which the blackening coating has the effects of anti-corrosion and reducing metal reflection and human eye invisibility. The blackening layer formed by the blackening coating of the present invention can replace the traditional resist layer, thereby simplifying the electrode manufacturing process of the touch panel, so as to reduce the cost and reduce the reflective effect of the metal electrode.

The Republic of China Patent Announcement No. M491203 also discloses an electrode structure for touch, including a substrate layer; at least one adhesion layer, forming a circuit pattern on the surface of the substrate layer; and a conductive electrode formed on the surface of the adhesion layer , And form a conductive circuit corresponding to the circuit pattern; a first blackened layer formed on the surface of the conductive electrode and made of a material that is easy to etch; and a weather-resistant layer formed on the surface of the first blackened layer and formed by Made of a material resistant to etching; wherein the thickness of the weather-resistant layer is smaller than that of the first blackening layer, the first blackening layer allows light to be absorbed by the first blackening layer and cannot enter the conductive electrode, forming a This prevents the user from directly inspecting the shielding surface of the conductive electrode. Based on this, the author can avoid the human eye from directly seeing the presence of the conductive electrode under the touch panel, and reduce the severe side etching phenomenon of the conductive electrode to improve the conductivity. The production yield of electrode products.

Republic of China Patent Announcement No. I509484 also discloses a touch panel device and its electrode structure. The electrode structure can be made of a metal conductive material. In order to effectively suppress the metal reflection, and does not affect the light transmittance and metal conductivity, the electrode structure proposed in the embodiment The main structure is a metal conductive layer, a roughened roughened structure and a blackened layer, wherein the electrode structure is combined with the substrate, and the electrode structure is provided with a roughened structure, for example, it is formed on the surface of the metal conductive layer, which can be used to reflect the metal backscatter Drop or drop The combination of the low metal conductive layer and the substrate is reflective, and the roughened structure can be formed by etching or processing on the metal conductive layer, or by electrolysis, sputtering, deposition, or coating. The blackened layer is used to absorb The light incident on the metal conductive layer reduces the color shift of the screen and resists metal reflection.

However, because the above electrode structure can only select specific materials, such as copper, aluminum, palladium, palladium oxide, or copper oxide, the oxide layer is not a bright metal, and the grayscale color of the blackened layer cannot be adjusted.

Therefore, how to design a blackened metal grid structure that can adjust the gray scale color of the blackened layer and its manufacturing method have become the common expectations of relevant equipment manufacturers and R&D personnel.

In view of the lack of adjustment of the gray scale color of the blackened layer in the prior art, the inventor has actively started to develop in order to improve the above-mentioned existing shortcomings. After continuous experimentation and efforts, the present invention was finally developed.

The first object of the present invention is to provide a blackened metal grid structure.

The second object of the present invention is to provide a method for manufacturing a blackened metal grid structure.

To achieve the above objective, the blackened metal grid structure of the present invention includes a substrate, at least one metal layer, and at least two blackened layers.

The substrate includes a first surface and a second surface. The metal layers are formed on the first surface and the second surface of the substrate, or one of the first surface and the second surface, the metal layers have wiring, and the metal layers are not The corresponding positions of the metal layers overlap.

The number of the blackening layer is twice that of the metal layer, the blackening layers are formed on the first surface and the second surface directly on the metal layers, and corresponding to the metal layers The position is formed on the first surface or the second surface, and the blackened layers are photoresists.

In order to achieve the above objective, the method for manufacturing a blackened metal grid structure of the present invention includes the following steps: Step A: providing a substrate, the substrate includes a first surface and a second surface; Step B: forming at least one metal layer on the first surface and the second surface of the substrate, or one of the first surface and the second surface, the metal layers have wiring, and the metal layers are Do not overlap with corresponding positions of other metal layers; and step C: forming a blackened layer directly on the first surface and the second surface respectively on the metal layers, and corresponding positions of the metal layers, Forming another blackening layer on the first surface or the second surface, the blackening layers are photoresists; using the blackening layers to cover the lines of the metal layers, the blackening layers can be controlled The gray scale and thickness.

With the above structure and method, the present invention uses the blackened layers to cover the lines of the metal layers, and can control the gray scale and thickness of the blackened layers.

(1): Blackened metal grid structure

(10): substrate

(101): The first surface

(102): Second surface

(11): Metal layer

(12,12a,12b): blackened layer

(2): Manufacturing method of blackened metal grid structure

Step 200~Step 202

1 is a schematic diagram of a first embodiment of the blackened metal grid structure of the present invention; FIG. 2 is a schematic diagram of a second embodiment of the blackened metal grid structure of the present invention; FIG. 3a is a physical vapor deposition of the present invention Schematic diagram of forming these metal layers by plating; FIG. 3b is a schematic diagram of photoresist coating, photoresist attaching and circuit exposure of the invention; FIG. 3c is a schematic diagram of circuit development and etching of the invention; FIG. 3d is a photoresist removal circuit of the invention FIG. 3e is a schematic diagram of the present invention performing photoresist exposure on the first surface; FIG. 3f is a schematic diagram of the present invention performing photoresist development on the first surface; FIG. 3g is the present invention performing photoresist on the second surface A schematic diagram of exposure; FIG. 3h is a schematic diagram of photoresist development on the second surface of the invention; FIG. 4a is a schematic diagram of the invention using physical vapor deposition coating to form the metal layers; FIG. 4b is a photoresist coating of the invention. Schematic diagram of photoresist attachment and circuit exposure; FIG. 4c is a schematic diagram of circuit development and etching of the present invention; and FIG. 5 is a method flowchart of a method of manufacturing a blackened metal grid structure of the present invention.

In order to make those skilled in the art understand the purpose of the present invention, the preferred embodiments of the present invention are described in detail below with reference to the drawings.

Please refer to FIGS. 1 and 2, the blackened metal grid structure (1) of the present invention includes a substrate (10), at least one metal layer (11), and at least two blackened layers (12a, 12b) .

The substrate (10) includes a first surface (101) and a second surface (102) corresponding to the first surface (101). The metal layers (11) are formed on the first surface (101) and the second surface (102) of the substrate (10), or the first surface (101) and the second surface (102) In one of them, the metal layers (11) have wires, and the metal layers (11) do not overlap with corresponding positions of other metal layers (11).

The number of the blackened layers (12a, 12b) is twice that of the metal layer (11), the blackened layers (12a, 12b) are respectively on the first surface (101) and the second surface (102) ), formed directly on the metal layers (11), the blackened layer (12a) as shown in FIG. 1, and the other surface position of the substrate corresponding to the metal layers (11) to form another blackened The blackened layer (12b) shown in FIG. 1, the blackened layer (12) is a photoresist.

The present invention uses the blackened layers (12a, 12b) to cover the lines of the metal layers (11) from the first surface (101) and the second surface (102) in a two-to-one manner, to Control the gray scale and thickness of the blackened layers (12a, 12b).

In a preferred embodiment of the present invention, the blackened layers (12a) directly disposed on the metal layers (11) respectively cover the metal layers (11).

Please refer to FIG. 1, FIG. 2 and FIGS. 3a to 3h. In a preferred embodiment of the present invention, the metal layers (11) are formed on the substrate (10) by physical vapor deposition coating The first surface (101) and the second surface (102), or one of the first surface (101) and the second surface (102).

The formation of the blackened layers (12a, 12b) is due to the metal layer (11) for photoresist coating, photoresist attachment and circuit exposure, circuit development and etching, circuit photoresist removal, on the first surface Photoresist exposure is performed, photoresist development is performed on the first surface, photoresist exposure is performed on the second surface, and photoresist development is performed on the second surface.

The blackening layer (12) is a positive photoresist or a negative photoresist.

Please refer to FIGS. 1, 2 and 4a to 4c. In another preferred embodiment of the present invention, the metal layers (11) are formed on the substrate (10) by physical vapor deposition coating The first surface (101) and the second surface (102), or one of the first surface (101) and the second surface (102).

The formation of the blackened layers (12a, 12b) is due to the metal layer (11) being subjected to photoresist coating, photoresist attachment and circuit exposure, circuit development and etching.

The blackening layer (12) is a positive photoresist or a negative photoresist.

In a preferred embodiment of the present invention, the material of the metal layers (11) is one of copper, aluminum, palladium, silver, gold, molybdenum, or molybdenum-neodymium alloy.

In another preferred embodiment of the present invention, the photoresist color difference of the blackened layers (12) is less than 1.0.

In still another preferred embodiment of the present invention, the material of the substrate (10) is a transparent material, and the light transmittance range of the substrate (10) is 85% to 100%.

In another preferred embodiment of the present invention, the photoresist optical density of the blackened layers (12) ranges from 1 to 10, and the photoresist line width of the blackened layers (12) ranges from 1 to 5 microns The thickness of the blackened layer (12) is 0.1 to 2 microns.

In still another preferred embodiment of the present invention, the blackened layers (12a) are the lines covering the metal layers (11), or the photoresist line width of the blackened layers (12a) is greater than that The circuit of the metal layer (11).

In another preferred embodiment of the present invention, the material of the substrate (10) is glass, polyethylene terephthalate, polyethylene naphthalate, polycycloolefin polymer, cycloolefin polymerization Or polyimide.

Please refer to FIG. 1, FIG. 2 and FIG. 5, the manufacturing method (2) of the blackened metal grid structure of the present invention includes the following steps: Step 200: providing a substrate (10), the substrate (10) includes A first surface (101) and a second surface (102); Step 201: forming at least part of the first surface (101) and the second surface (102) of the substrate (10), or one of the first surface (101) and the second surface (102) A metal layer (11), the metal layers (11) have lines, and the metal layers (11) do not overlap with corresponding positions of other metal layers (11); and step 202: respectively on the first surface ( 101) and the second surface (102), a blackening layer (12a) is formed directly on the metal layers (11), and another surface position of the substrate corresponding to the metal layers (11) is formed Another blackening layer (12b), the blackening layers (12a, 12b) are photoresists; using the blackening layers (12a, 12b) to cover the lines of the metal layers, the blackening layers can be controlled Gray scale and thickness of (12a, 12b).

In a preferred embodiment of the present invention, the blackened layers (12a) directly disposed on the metal layers (11) respectively cover the metal layers (11).

Please refer to FIG. 1, FIG. 2, FIG. 3a to FIG. 3h and FIG. 5, in a preferred embodiment of the present invention in step 201, the metal layers (11) are formed on the film using physical vapor deposition coating The first surface (101) and the second surface (102) of the substrate (10), or one of the first surface (101) and the second surface (102).

In step 202 in another preferred embodiment of the present invention, the formation of the blackened layers (12a, 12b) is due to the metal layer (11) for photoresist coating, photoresist attachment and line exposure, Circuit development and etching, circuit photoresist removal, photoresist exposure on the first surface, photoresist development on the first surface, photoresist exposure on the second surface, and photoresist development on the second surface.

The blackening layer (12) is a positive photoresist or a negative photoresist.

Please refer to FIG. 1, FIG. 2, FIG. 4a to FIG. 4c and FIG. 5, in another preferred embodiment of the present invention in step 201, the metal layers (11) are formed by physical vapor deposition coating on The first surface (101) and the second surface (102) of the substrate (10), or one of the first surface (101) and the second surface (102).

In step 202 in yet another preferred embodiment of the present invention, the formation of the blackened layers (12a, 12b) is due to the metal layer (11) for photoresist coating, photoresist attachment and line exposure, Line development and etching.

The blackening layer (12) is a positive photoresist or a negative photoresist.

In a preferred embodiment of the present invention, the material of the metal layers (11) is one of copper, aluminum, palladium, silver, gold, molybdenum, or molybdenum-neodymium alloy.

In another preferred embodiment of the present invention, the photoresist color difference of the blackened layers (12) is less than 1.0.

In still another preferred embodiment of the present invention, the material of the substrate (10) is a transparent material, and the light transmittance range of the substrate (10) is 85% to 100%.

In another preferred embodiment of the present invention, the photoresist optical density of the blackened layers (12) ranges from 1 to 10, and the photoresist line width of the blackened layers (12) ranges from 1 to 5 microns The thickness of the blackened layer (12) is 0.1 to 2 microns.

In a preferred embodiment of the present invention, the gray levels of the blackened layers (12) can be adjusted with different metal materials, or with different thicknesses of the same black photoresist, or with different metal materials. , Or the same thickness of different black resists can be adjusted.

Further, in the present invention, the circuit made of the metal layers (11) is used as a mask, and a blackening layer (12a) is coated first, and then a layer of blackening is coated after light development and etching Layer (12b), then light development and etching, so that there will be such blackened layers (12a, 12b) above and below any line.

In still another preferred embodiment of the present invention, the blackened layers (12a) are the lines covering the metal layers (11), or the photoresist line width of the blackened layers (12a) is greater than that The circuit of the metal layer (11).

In another preferred embodiment of the present invention, the material of the substrate (10) is glass, polyethylene terephthalate, polyethylene naphthalate, polycycloolefin polymer, cycloolefin polymerization Or polyimide.

Through the above-mentioned structure, the present invention uses the blackened layers to cover the lines of the metal layers. Not only can the gray of the blackened layers be controlled by photoresist attaching, line exposure, line development and etching The level and thickness of the metal layer can be adjusted to any metal material, and the gray scale color of the blackened layer can be adjusted. Moreover, its structure is not easily reached by those in the technical field, and it is undoubtedly novel and progressive.

Through the above detailed description, it can be fully shown that the purpose and effectiveness of the present invention are progressive in implementation, extremely useful for the industry, and are new inventions that have never been seen on the market, and fully meet the requirements of the invention patent , Xuan filed an application in accordance with the law. The above is only the preferred embodiment of the present invention, and it should not be used to limit the scope of the present invention. That is, all changes and modifications made in accordance with the scope of the patent of the present invention shall fall within the scope of the patent of the present invention. I would like to ask your reviewing committee to express your knowledge and pray for your permission.

(1): Blackened metal grid structure

(10): substrate

(101): The first surface

(102): Second surface

(11): Metal layer

(12a, 12b): blackened layer

Claims (10)

A blackened metal grid structure includes: a substrate including a first surface and a second surface corresponding to the first surface; at least one metal layer is formed on the first surface of the substrate and For the portion of the second surface, the metal layers have wiring; and two blackening layers, the blackening layers are formed directly on the metal layers on the first surface and the second surface, respectively, and Another blackened layer should be formed at the other surface position of the substrate of the metal layer, and these blackened layers are photoresists; using these blackened layers to cover the circuits of the metal layers can control the blackened layers The gray scale and thickness. The blackened metal grid structure as described in item 1 of the scope of the patent application, wherein the blackened layers directly disposed on the metal layers individually cover the metal layers. The blackened metal grid structure as described in item 1 or item 2 of the patent application scope, wherein the metal layers are formed on the first surface and the second surface of the substrate using physical vapor deposition coatings, or the One of the first surface and the second surface. The blackened metal grid structure as described in item 3 of the patent scope, wherein the formation of the blackened layers is due to the metal layer for photoresist coating, photoresist attachment and circuit exposure, circuit development and etching, The line is photoresist removed, photoresist exposure is performed on the first surface, photoresist development is performed on the first surface, photoresist exposure is performed on the second surface, and photoresist development is performed on the second surface. The blackened metal grid structure as described in item 4 of the patent application scope, wherein the blackened layers are positive photoresist or negative photoresist. The blackened metal grid structure as described in item 3 of the patent application scope, wherein the blackened layers are formed by photoresist coating, photoresist attachment and circuit exposure, circuit development and etching due to the metal layer. The blackened metal grid structure as described in item 6 of the patent application scope, wherein the blackened layers are positive photoresist or negative photoresist. The blackened metal grid structure as described in item 1 of the patent application scope, wherein the material of the metal layers is one of copper, aluminum, palladium, silver, gold, molybdenum, or molybdenum-neodymium alloy, and the blackening The photoresist color difference of the layer is less than 1.0, the material of the substrate is a transparent material, and the light transmittance range of the substrate is 85% to 100%. The blackened metal grid structure as described in item 1 of the patent application range, wherein the photoresist optical concentration of the blackened layers is in the range of 1 to 10, and the photoresist line width of the blackened layers is in the range of 1 to 5 microns The thickness of the blackened layers is 0.1 to 2 microns. The blackened layers cover the circuits of the metal layers, or the photoresist line width of the blackened layers is larger than the circuits of the metal layers. The material of the substrate is one of glass, polyethylene terephthalate, polyethylene naphthalate, polycycloolefin polymer, cycloolefin polymer or polyimide. A method for manufacturing a blackened metal grid structure includes steps: Step A: providing a substrate, the substrate includes a first surface and a second surface corresponding to the first surface; Step B: on the substrate At least one metal layer is formed on the first surface and the second surface, and the metal layers have wiring; and Step C: using photoresist coating and photoresist on the first surface and the second surface, respectively For development and photoresist exposure methods, a blackening layer is formed directly on the metal layers, and the other surface position of the substrate corresponding to the metal layers is used for photoresist coating, photoresist development and photoresist exposure methods To form another blackened layer, the blackened layer is a photoresist; using the blackened layer to cover the lines of the metal layers, the gray scale and thickness of the blackened layer can be controlled.

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