TWI718654B - Conductive plate for touch device - Google Patents

Conductive plate for touch device Download PDF

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TWI718654B
TWI718654B TW108131897A TW108131897A TWI718654B TW I718654 B TWI718654 B TW I718654B TW 108131897 A TW108131897 A TW 108131897A TW 108131897 A TW108131897 A TW 108131897A TW I718654 B TWI718654 B TW I718654B
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layer
optical adjustment
film structure
touch device
conductive plate
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TW108131897A
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TW202111492A (en
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林勇任
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郡宏光電股份有限公司
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Abstract

觸控裝置用之導電板包括透光性支撐基板、各形成於透光性支撐基板之相反設置的第一、二表面的第一、二光學調整膜層結構與各疊置於第一、二光學調整膜層結構上的第一、二導電膜層結構。第一光學調整與導電膜層結構沿背向第一表面各依序包括折射率大於2的光學調整層及附著層與內側氧化銅層、內側鎳銅合金層、銅導體層、外側鎳銅合金層及外側氧化銅層。第二光學調整與導電膜層結構沿背向第二表面各依序包括折射率大於2的第一光學調整層、附著層及折射率小於第一光學調整層的第二光學調整層與氧化銦錫層、銅導體層及鎳銅合金層。The conductive plate for the touch control device includes a light-transmitting support substrate, first and second optical adjustment film structures formed on the first and second surfaces opposite to the light-transmitting support substrate, and the first and second optical adjustment film structures respectively stacked on the first and second surfaces. The first and second conductive film structures on the optical adjustment film structure. The first optical adjustment and conductive film layer structure each sequentially includes an optical adjustment layer with a refractive index greater than 2 and an adhesion layer and an inner copper oxide layer, an inner nickel-copper alloy layer, a copper conductor layer, and an outer nickel-copper alloy in sequence along the first surface. Layer and outer copper oxide layer. The second optical adjustment and conductive film layer structure each sequentially includes a first optical adjustment layer with a refractive index greater than 2, an adhesion layer, and a second optical adjustment layer with a refractive index smaller than the first optical adjustment layer, and indium oxide along the back to the second surface. Tin layer, copper conductor layer and nickel-copper alloy layer.

Description

觸控裝置用之導電板Conductive plate for touch device

本發明是有關於一種導電板,特別是指一種觸控裝置用之導電板。The present invention relates to a conductive plate, in particular to a conductive plate used in a touch device.

參閱圖1,一種現有之觸控裝置用的導電板1,包括一由聚對苯二甲酸二乙酯(polyethylene terephthalate,簡稱PET)所構成的支撐基板11、一對形成於該支撐基板11之一上表面與一下表面的硬塗層12、一形成於該對硬塗層12之上層硬塗層12上的光學調整層13,及一形成於該光學調整層13上的導電膜層結構14。該導電膜層結構14具有一形成於該光學調整層13上的氧化銦錫(ITO)層141、一形成於該氧化銦錫層141上的銅導體層142及一形成於該鎳銅合金層143。Referring to FIG. 1, a conductive plate 1 for a conventional touch device includes a supporting substrate 11 made of polyethylene terephthalate (PET), and a pair of supporting substrates 11 formed on the supporting substrate 11 A hard coat layer 12 on the upper and lower surfaces, an optical adjustment layer 13 formed on the hard coat layer 12 above the pair of hard coat layers 12, and a conductive film layer structure 14 formed on the optical adjustment layer 13 . The conductive film layer structure 14 has an indium tin oxide (ITO) layer 141 formed on the optical adjustment layer 13, a copper conductor layer 142 formed on the indium tin oxide layer 141, and a nickel-copper alloy layer 143.

該現有之觸控裝置用的導電板1一般是供應給下游廠商以透過蝕刻技術來對該導電膜層結構14蝕刻出其觸控裝置用的線路。然而,基於該現有之觸控裝置用的導電板1中的光學調整層13與氧化銦錫層141兩者間的附著性不佳,以致於下游廠商在蝕刻其導電膜層結構14的過程中,該導電膜層結構14中的氧化銦錫層141容易自該光學調整層13脫附以對電性造成不良的影響。再者,該導電膜層結構14中的氧化銦錫層141屬於金屬氧化物,其導電度(electrical conductivity)相對低於金屬(如,銅),也因此影響了其最終線路的電性能。The conductive plate 1 used in the conventional touch device is generally supplied to downstream manufacturers to etch the conductive film layer structure 14 by etching the circuit for the touch device. However, the adhesion between the optical adjustment layer 13 and the indium tin oxide layer 141 in the conductive plate 1 for the existing touch device is not good, so that downstream manufacturers are in the process of etching their conductive film layer structure 14 In addition, the indium tin oxide layer 141 in the conductive film layer structure 14 is easily detached from the optical adjustment layer 13 to have a bad influence on the electrical properties. Furthermore, the indium tin oxide layer 141 in the conductive film layer structure 14 is a metal oxide, and its electrical conductivity is relatively lower than that of a metal (eg, copper), which also affects the electrical performance of the final circuit.

經上述說明可知,改良觸控裝置用之導電板結構以供下游廠商能在蝕刻線路過程中,確保其氧化銦錫層141不受蝕刻劑所影響而脫附於其光學調整層13並蝕刻出完整的線路,同時亦能滿足觸控裝置用之導電板之電性能的需求,是所屬技術領域中的相關技術人員有待解決的課題。It can be seen from the above description that the structure of the conductive plate used in the touch device is improved so that downstream manufacturers can ensure that the indium tin oxide layer 141 is not affected by the etchant and is detached from the optical adjustment layer 13 and etched during the etching process. A complete circuit, which can also meet the electrical performance requirements of the conductive plate used in the touch device, is a problem to be solved by the relevant technical personnel in the relevant technical field.

因此,本發明的目的,即在提供一種能供應給觸控裝置下游廠商於蝕刻線路過程中蝕刻出完整線路並滿足觸控裝置用之導電板之電性能需求的觸控裝置用之導電板。Therefore, the object of the present invention is to provide a conductive plate for touch devices that can be supplied to downstream manufacturers of touch devices to etch a complete circuit during the etching process and meet the electrical performance requirements of the conductive plate for touch devices.

於是,本發明觸控裝置用之導電板,包括一透光性支撐基板、一第一光學調整膜層結構、一第二光學調整膜層結構、一第一導電膜層結構,及一第二導電膜層結構。該第一光學調整膜層結構形成於該透光性支撐基板之一第一表面,且沿一背向該透光性支撐基板之第一表面的第一堆疊方向依序包括一折射率大於2的光學調整層,及一附著層。該第二光學調整膜層結構形成於該透光性支撐基板之一相反於該第一表面的第二表面,且沿一背向該透光性支撐基板之第二表面的第二堆疊方向依序包括一折射率大於2的第一光學調整層、一附著層,及一折射率小於該第一光學調整層的第二光學調整層。該第一導電膜層結構疊置於該第一光學調整膜層結構上,且沿該第一堆疊方向依序包括一內側氧化銅層、一內側鎳銅合金層、一銅導體層、一外側鎳銅合金層及一外側氧化銅層。該第二導電膜層結構疊置於該第二光學調整膜層結構上,且沿該第二堆疊方向依序包括一氧化銦錫層、一銅導體層,及一鎳銅合金層。Therefore, the conductive plate used in the touch device of the present invention includes a light-transmitting support substrate, a first optical adjustment film structure, a second optical adjustment film structure, a first conductive film structure, and a second Conductive film layer structure. The first optical adjustment film structure is formed on a first surface of the translucent support substrate, and includes a refractive index greater than 2 along a first stacking direction facing away from the first surface of the translucent support substrate. Optical adjustment layer, and an adhesion layer. The second optical adjustment film structure is formed on a second surface of the translucent support substrate opposite to the first surface, and along a second stacking direction facing away from the second surface of the translucent support substrate The sequence includes a first optical adjustment layer with a refractive index greater than 2, an adhesion layer, and a second optical adjustment layer with a refractive index smaller than the first optical adjustment layer. The first conductive film layer structure is stacked on the first optical adjustment film layer structure, and includes an inner copper oxide layer, an inner nickel-copper alloy layer, a copper conductor layer, and an outer layer in sequence along the first stacking direction A nickel-copper alloy layer and an outer copper oxide layer. The second conductive film layer structure is stacked on the second optical adjustment film layer structure, and includes an indium tin oxide layer, a copper conductor layer, and a nickel copper alloy layer in sequence along the second stacking direction.

本發明的功效在於:該第一導電膜層結構中的內側氧化銅層與該第二導電膜層結構中的氧化銦錫層能分別藉由該第一光學調整膜層結構中的附著層與該第二光學調整膜層結構中的附著層,來分別輔助其內側氧化銅層與其氧化銦錫層仍附著於該第一光學調整膜層結構與該第二光學調整膜層結構,避免觸控裝置下游廠商透過蝕刻劑蝕刻各導電膜層結構時破壞其最終線路的完整性,且該銅導體層亦能滿足觸控裝置相關設備廠之電路性能的需求。The effect of the present invention is that the inner copper oxide layer in the first conductive film layer structure and the indium tin oxide layer in the second conductive film layer structure can be adjusted by the adhesion layer and the adhesion layer in the first optical adjustment film layer structure, respectively. The adhesion layer in the second optical adjustment film structure respectively assists its inner copper oxide layer and its indium tin oxide layer to still adhere to the first optical adjustment film structure and the second optical adjustment film structure to avoid touch The downstream manufacturers of the device destroy the integrity of the final circuit when etching each conductive film layer structure with an etchant, and the copper conductor layer can also meet the circuit performance requirements of the touch device related equipment factory.

參閱圖2,本發明觸控裝置用之導電板一實施例,包括一透光性支撐基板2、一第一光學調整膜層結構3、一第二光學調整膜層結構4、一第一導電膜層結構5,及一第二導電膜層結構6。適用於本發明該實施例之透光性支撐基板2是由聚對苯二甲酸二乙酯(PET)、環狀烯烴共聚物(cyclic olefin copolymer;簡稱COC)、無色聚醯亞胺(colorless polyimide,簡稱CPI)、光學級聚醯亞胺(optical polyimide,簡稱OPI)或環狀烯烴聚合物(cyclic olefin polymer,簡稱COP)所製成。在本發明該實施例中,該透光性支撐基板2是由PET所製成。Referring to FIG. 2, an embodiment of the conductive plate used in the touch device of the present invention includes a light-transmitting support substrate 2, a first optical adjustment film structure 3, a second optical adjustment film structure 4, and a first conductive Film layer structure 5, and a second conductive film layer structure 6. The transparent support substrate 2 suitable for this embodiment of the present invention is made of polyethylene terephthalate (PET), cyclic olefin copolymer (COC), colorless polyimide , Referred to as CPI), optical polyimide (optical polyimide, referred to as OPI) or cyclic olefin polymer (cyclic olefin polymer, referred to as COP). In this embodiment of the present invention, the translucent support substrate 2 is made of PET.

該第一光學調整膜層結構3形成於該透光性支撐基板2之一第一表面21,且沿一背向該透光性支撐基板2之第一表面21的第一堆疊方向依序包括一折射率大於2的光學調整層31,及一附著層32。The first optical adjustment film structure 3 is formed on a first surface 21 of the light-transmitting support substrate 2, and includes sequentially along a first stacking direction facing away from the first surface 21 of the light-transmitting support substrate 2 An optical adjustment layer 31 with a refractive index greater than 2 and an adhesion layer 32.

該第二光學調整膜層結構4形成於該透光性支撐基板2之一相反於該第一表面21的第二表面22,且沿一背向該透光性支撐基板2之第二表面22的第二堆疊方向依序包括一折射率大於2的第一光學調整層41、一附著層43,及一折射率小於該第一光學調整層41的第二光學調整層42。The second optical adjustment film structure 4 is formed on a second surface 22 of the translucent support substrate 2 opposite to the first surface 21 and along a second surface 22 facing away from the translucent support substrate 2 The second stacking direction includes a first optical adjustment layer 41 with a refractive index greater than 2, an adhesion layer 43, and a second optical adjustment layer 42 with a refractive index smaller than that of the first optical adjustment layer 41 in sequence.

該第一導電膜層結構5疊置於該第一光學調整膜層結構3上,且沿該第一堆疊方向依序包括一內側氧化銅層51、一內側鎳銅合金層52、一銅導體層53、一外側鎳銅合金層54及一外側氧化銅層55。The first conductive film layer structure 5 is stacked on the first optical adjustment film layer structure 3, and includes an inner copper oxide layer 51, an inner nickel-copper alloy layer 52, and a copper conductor in sequence along the first stacking direction Layer 53, an outer nickel-copper alloy layer 54 and an outer copper oxide layer 55.

該第二導電膜層結構6疊置於該第二光學調整膜層結構4上,且沿該第二堆疊方向依序包括一氧化銦錫層61、一銅導體層62,及一鎳銅合金層63。The second conductive film layer structure 6 is stacked on the second optical adjustment film layer structure 4, and includes an indium tin oxide layer 61, a copper conductor layer 62, and a nickel copper alloy in sequence along the second stacking direction Layer 63.

詳細地來說,本發明該實施例是藉由該第二光學調整膜層結構4之第一光學調整層41與第二光學調整層42兩者間的折射率差以改善其透光性。然而,基於該第一光學調整膜層結構3之光學調整層31與該第一導電膜層結構5之內側氧化銅層51兩者間的附著性不佳,且該第二光學調整膜層結構4之第一光學調整層41與其第二光學調整層42兩者間的附著性低,亦與該第二導電膜層結構6中的氧化銦錫層61缺乏附著性,因而該第一光學調整膜層結構3之光學調整層31需透過其附著層32來提升其光學調整層31與該第一導電膜層結構5之內側氧化銅層51的附著性,且該第二光學調整膜層結構4之第一光學調整層41也同樣需透過其附著層43來提升其第一光學調整層41與第二光學調整層42及該第二電膜層結構6中的氧化銦錫層61的附著性。In detail, this embodiment of the present invention improves the light transmittance of the second optical adjustment film structure 4 by the refractive index difference between the first optical adjustment layer 41 and the second optical adjustment layer 42. However, the adhesion between the optical adjustment layer 31 of the first optical adjustment film structure 3 and the inner copper oxide layer 51 of the first conductive film structure 5 is poor, and the second optical adjustment film structure The adhesion between the first optical adjustment layer 41 and the second optical adjustment layer 42 of 4 is low, and it also lacks adhesion with the indium tin oxide layer 61 in the second conductive film layer structure 6, so the first optical adjustment The optical adjustment layer 31 of the film structure 3 needs to pass through its adhesion layer 32 to improve the adhesion between the optical adjustment layer 31 and the inner copper oxide layer 51 of the first conductive film structure 5, and the second optical adjustment film structure The first optical adjustment layer 41 of 4 also needs to improve the adhesion of the first optical adjustment layer 41 and the second optical adjustment layer 42 and the indium tin oxide layer 61 in the second electrical film layer structure 6 through the adhesion layer 43. Sex.

因此,較佳地,該第一光學調整膜層結構3與該第二光學調整膜層結構4之附著層32、43是由非晶矽(amorphous Si)、一氧化矽(SiO)或鉻(Cr)所製成,並具有一小於5 nm的厚度;該第一光學調整膜層結構3之光學調整層31與該第二光學調整膜層結構4之第一光學調整層41是選自TiO 2、Ti 3O 5、Ta 2O 5、Nb 2O 5或ZrO 2;該第二光學調整膜層結構4之第二光學調整層42是結晶性SiO 2。在本發明該實施例中,該第一光學調整膜層結構3之附著層32與該第二光學調整膜層結構4之附著層43是由1.2 nm之非晶矽所製成,該第二光學調整膜層結構4之第二光學調整層42的厚度為10 nm。 Therefore, preferably, the adhesion layers 32, 43 of the first optical adjustment film structure 3 and the second optical adjustment film structure 4 are made of amorphous silicon (amorphous Si), silicon monoxide (SiO) or chromium ( Cr) and has a thickness less than 5 nm; the optical adjustment layer 31 of the first optical adjustment film structure 3 and the first optical adjustment layer 41 of the second optical adjustment film structure 4 are selected from TiO 2. Ti 3 O 5 , Ta 2 O 5 , Nb 2 O 5 or ZrO 2 ; the second optical adjustment layer 42 of the second optical adjustment film structure 4 is crystalline SiO 2 . In this embodiment of the present invention, the adhesion layer 32 of the first optical adjustment film structure 3 and the adhesion layer 43 of the second optical adjustment film structure 4 are made of 1.2 nm amorphous silicon, and the second The thickness of the second optical adjustment layer 42 of the optical adjustment film structure 4 is 10 nm.

值得一提的是,本發明該實施例之該第一導電膜層結構5中的內側氧化銅層51與外側氧化銅層55之目的是在於,降低該第一導電層結構5之銅導體層53的反射問題;換句話說,該內側氧化銅層51與外側氧化銅層55是用來作為一黑化層使用。此處需進一步補充說明的是,當該內側氧化銅層51與外側氧化銅層55之厚度不足或過厚時,皆無法達到有效的黑化效果。因此,較佳地,本發明該實施例之第一導電膜層結構5之內側氧化銅層51與外側氧化銅層55的厚度介於35 nm至45 nm間。在本發明該實施例中,該內側氧化銅層51與外側氧化銅層55的厚度各為40 nm,該內側鎳銅合金層52與外側鎳銅合金層54的厚度各為5 nm,且該銅導體層53的厚度為200 nm。It is worth mentioning that the purpose of the inner copper oxide layer 51 and the outer copper oxide layer 55 in the first conductive film layer structure 5 of this embodiment of the present invention is to reduce the copper conductor layer of the first conductive layer structure 5 53. In other words, the inner copper oxide layer 51 and the outer copper oxide layer 55 are used as a blackened layer. It should be further explained here that when the thickness of the inner copper oxide layer 51 and the outer copper oxide layer 55 is insufficient or too thick, an effective blackening effect cannot be achieved. Therefore, preferably, the thickness of the inner copper oxide layer 51 and the outer copper oxide layer 55 of the first conductive film layer structure 5 of this embodiment of the present invention is between 35 nm and 45 nm. In this embodiment of the present invention, the inner copper oxide layer 51 and the outer copper oxide layer 55 each have a thickness of 40 nm, the inner nickel-copper alloy layer 52 and the outer nickel-copper alloy layer 54 each have a thickness of 5 nm, and The thickness of the copper conductor layer 53 is 200 nm.

本發明該實施例還選擇性地包括一第一硬塗層71及一第二硬塗層72。該第一硬塗層71與該第二硬塗層72分別形成於該透光性支撐基板2的第一表面21與第二表面22上,以分別介於該第一光學調整膜層結構3及該透光性支撐基板2間與介於該第二光學調整膜層結構4及該透光性支撐基板2間。在本發明該實施例中,該第一硬層71與該第二硬塗層72是由 ZrO 2所製成。 This embodiment of the present invention also optionally includes a first hard coating layer 71 and a second hard coating layer 72. The first hard coating layer 71 and the second hard coating layer 72 are respectively formed on the first surface 21 and the second surface 22 of the translucent support substrate 2 so as to be interposed between the first optical adjustment film structure 3 And between the transparent supporting substrate 2 and between the second optical adjustment film layer structure 4 and the transparent supporting substrate 2. In this embodiment of the present invention, the first hard layer 71 and the second hard coating layer 72 are made of ZrO 2 .

此處須補充說明的是,基於ZrO 2的折射率約為2.16;因此,本發明該實施例之第一硬層71與第二硬塗層72亦可分別取代為該第一光學調整膜層結構3之光學調整層31與該第二光學調整膜層結構4的第一光學調整層41,且當本發明該實施例之第一光學調整膜層結構3之光學調整層31與第二光學調整膜層結構4之第一光學調整層41為ZrO 2時,該第一硬塗層71與該第二硬塗層72是可被省略掉。也就是說,當該第一光學調整膜層結構3之光學調整層31(與該第二光學調整膜層結構4之第一光學調整層41)及該第一、二硬塗層71、72兩者的其中一者材料為ZrO 2時,則另一者可被省略,因而能以單一膜層同時達成保護及光學調整的目的。在本發明該實施例中,該第一光學調整膜層結構3之光學調整層層31與該第二光學調整膜層結構4之第一光學調整層41是選自厚度為1000 nm的ZrO 2,且如圖2中所示之該第一光學調整膜層結構3之光學調整層層31與第一硬塗層71及該第二光學調整膜層結構4之第一光學調整層41與該第二硬塗層72各為單一膜層。 It should be added here that the refractive index based on ZrO 2 is about 2.16; therefore, the first hard layer 71 and the second hard coating layer 72 of this embodiment of the present invention can also be replaced by the first optical adjustment film layer. The optical adjustment layer 31 of the structure 3 and the first optical adjustment layer 41 of the second optical adjustment film structure 4, and when the optical adjustment layer 31 and the second optical adjustment layer 31 of the first optical adjustment film structure 3 of this embodiment of the present invention When the first optical adjustment layer 41 of the adjustment film structure 4 is ZrO 2 , the first hard coating layer 71 and the second hard coating layer 72 can be omitted. That is, when the optical adjustment layer 31 of the first optical adjustment film structure 3 (and the first optical adjustment layer 41 of the second optical adjustment film structure 4) and the first and second hard coating layers 71, 72 When one of the two materials is ZrO 2 , the other can be omitted, so that a single film layer can achieve the purpose of protection and optical adjustment at the same time. In this embodiment of the present invention, the optical adjustment layer 31 of the first optical adjustment film structure 3 and the first optical adjustment layer 41 of the second optical adjustment film structure 4 are selected from ZrO 2 with a thickness of 1000 nm And the first optical adjustment layer 31 and the first hard coat layer 71 of the first optical adjustment film structure 3 and the first optical adjustment layer 41 and the second optical adjustment film structure 4 as shown in FIG. Each of the second hard coating layers 72 is a single film layer.

經本發明該實施例前述之詳細說明可知,本發明利用該第一光學調整膜層結構3之附著層32來提升其光學調整層31與該第一導電膜層結構5之內側氧化銅51間的附著性,並利用該第二光學調整膜層結構4之附著層43來提升其第一光學調整層41與其第二光學調整層42及該第二導電膜層結構6之氧化銦錫層61的附著性,觸控裝置下游廠商在透過蝕刻技術蝕刻該第一導電膜層結構5與第二導電膜層結構6時,該第一導電膜層結構5與第二導電膜層結構6能分別藉由該附著層32與該附著層43來維持其第一導電膜層結構5之內側氧化銅層51與其第二導電膜層結構6之氧化銦錫層61免受蝕刻劑影響,而分別脫附於其第一光學調整膜層結構3與其第二光學調整膜層結構4,並蝕刻出完整的線路。According to the foregoing detailed description of the embodiment of the present invention, it can be seen that the present invention uses the adhesion layer 32 of the first optical adjustment film structure 3 to improve the optical adjustment layer 31 and the inner copper oxide 51 of the first conductive film structure 5 Adhesion, and use the adhesion layer 43 of the second optical adjustment film structure 4 to improve the adhesion of the first optical adjustment layer 41 and the second optical adjustment layer 42 and the indium tin oxide layer 61 of the second conductive film structure 6 Adhesiveness. When downstream manufacturers of touch devices etch the first conductive film layer structure 5 and the second conductive film layer structure 6 through etching technology, the first conductive film layer structure 5 and the second conductive film layer structure 6 can be used separately The adhesion layer 32 and the adhesion layer 43 maintain the inner copper oxide layer 51 of the first conductive film layer structure 5 and the indium tin oxide layer 61 of the second conductive film layer structure 6 from the etchant, and desorb respectively In its first optical adjustment film structure 3 and its second optical adjustment film structure 4, a complete circuit is etched.

附帶一提的是,本發明該實施例之第一導電膜層結構5中的銅導體層53之導電度是相對高於先前技術所提之氧化銦錫層141;因此,本發明該實施例在供應給下游廠商蝕刻出其最終線路後所對應貢獻出來的電性能,也必然能滿足觸控裝置相關廠商的需求。Incidentally, the conductivity of the copper conductor layer 53 in the first conductive film layer structure 5 of this embodiment of the present invention is relatively higher than that of the indium tin oxide layer 141 mentioned in the prior art; therefore, this embodiment of the present invention After supplying to downstream manufacturers to etch their final circuits, the corresponding electrical performance contributed will inevitably meet the needs of manufacturers related to touch devices.

下方表1.顯示有本案該實施例之經蝕刻後的電性測試、附著性測試(百格測試)與光學測試等分析結果;其中,該第一導電膜層結構5經蝕刻後是呈網格狀的態樣。烘烤前烘烤後Table 1 below shows the etched electrical test, adhesion test (100 grid test), and optical test analysis results of this embodiment of this case; wherein, the first conductive film layer structure 5 is etched into a net Lattice state. After baking before baking

表1. 片電阻(Ω/□) 0.13 百格測試(ASTM3359) 烘烤前 5B/5B 烘烤後 5B/5B 第一光學調整膜層結構3側 烘烤前 CIE1976色度 L* 36.9 a* 1.6 b* -4.3 C* 4.6 290.8 反射率(%) 10.4 @550 nm反射率(%) 9.3 烘烤後 CIE1976色度 L* 39 a* 4 b* -2 C* 4 334 反射率(%) 12 @550 nm反射率(%) 10 第二光學調整膜層結構4側 烘烤前 CIE1976色度 L* 45.8 a* -9.3 b* -10.4 C* 13.9 228.4 反射率(%) 13.9 @550 nm反射率(%) 16.3 烘烤後 CIE1976色度 L* 49 a* -8 b* -9 C* 11 228 反射率(%) 16 @550 nm反射率(%) 18 Table 1. Sheet resistance (Ω/□) 0.13 Hundred grid test (ASTM3359) Before baking 5B/5B After baking 5B/5B 3 sides of the first optical adjustment film structure Before baking CIE1976 chromaticity L* 36.9 a* 1.6 b* -4.3 C* 4.6 290.8 Reflectivity(%) 10.4 @550 nm reflectance (%) 9.3 After baking CIE1976 chromaticity L* 39 a* 4 b* -2 C* 4 334 Reflectivity(%) 12 @550 nm reflectance (%) 10 4 sides of the second optical adjustment film structure Before baking CIE1976 chromaticity L* 45.8 a* -9.3 b* -10.4 C* 13.9 228.4 Reflectivity(%) 13.9 @550 nm reflectance (%) 16.3 After baking CIE1976 chromaticity L* 49 a* -8 b* -9 C* 11 228 Reflectivity(%) 16 @550 nm reflectance (%) 18

由上方表1.顯示可知,本發明該實施例之片電阻僅為0.13Ω/□,顯示其電性能足夠滿足觸控裝置相關設備廠的需求。From the display in Table 1. above, it can be seen that the sheet resistance of this embodiment of the present invention is only 0.13Ω/□, which shows that its electrical performance is sufficient to meet the requirements of touch device related equipment manufacturers.

此外,本發明該實施例之百格測試於烘烤前與烘烤後皆為附著性等級最高的5B/5B,證實本發明該實施例在經過蝕刻該第一導電膜層結構5與第二導電膜層結構6後,該第一導電膜層結構5與第二導電膜層結構6能分別藉由該第一、二光學調整膜層結構3、4之附著層32、43來提升其與該一、二光學調整膜層結構3、4間的附著性。In addition, the 100-grid test of this embodiment of the present invention has the highest adhesion grade 5B/5B before and after baking, which proves that the first conductive film structure 5 and the second conductive film structure 5 and the second layer are etched in this embodiment of the present invention. After the conductive film structure 6, the first conductive film structure 5 and the second conductive film structure 6 can be improved by the adhesion layers 32 and 43 of the first and second optical adjustment film structures 3 and 4, respectively. The first and second optics adjust the adhesion between the film structures 3 and 4.

又,比較該第一光學調整膜層結構3側與該第二光學調整膜層結構4側之光學測試結果可知,該第一光學調整膜層結構3側於烘烤後的反射率與550 nm波長處的反射率僅分別為12%與10%,且亮度(L*)僅為39;反觀該第二光學調整膜層結構4側於烘烤後的反射率與550 nm波長處的反射率則是分別提升至16%與18%,且亮度(L*)也提升至49,證實該第一導電膜層結構5之內側氧化銅層51與外側氧化銅層55達到黑化的效果,可防止該銅導體層53之反射問題。In addition, comparing the optical test results of the first optical adjustment film structure 3 side and the second optical adjustment film structure 4 side, it can be seen that the reflectance of the first optical adjustment film structure 3 side after baking and 550 nm The reflectivity at the wavelength is only 12% and 10%, and the brightness (L*) is only 39; in contrast, the reflectivity at the side of the second optical adjustment film structure 4 after baking and the reflectivity at the wavelength of 550 nm It is increased to 16% and 18%, respectively, and the brightness (L*) is also increased to 49, which proves that the inner copper oxide layer 51 and the outer copper oxide layer 55 of the first conductive film layer structure 5 achieve the blackening effect. Prevent the reflection problem of the copper conductor layer 53.

綜上所述,本發明觸控裝置用之導電板之第一、二光學調整膜層結構3、4的附著層32、43得以令觸控裝置之下游廠商透過蝕刻劑蝕刻其第一、二導電膜層結構5、6時,不受蝕刻劑所影響而脫附於其第一、二光學調整膜層結構3、4,從而維持其最終線路的完整性,且該第一導電膜層結構5之銅導體層53也因其導電度相對高於氧化銦錫(ITO)而具有較低且符合觸控裝置相關設備廠需求的片電阻,故確實能達成本發明的目的。In summary, the adhesion layers 32 and 43 of the first and second optical adjustment film structures 3 and 4 of the conductive plate used in the touch device of the present invention can enable downstream manufacturers of the touch device to etch the first and second layers through the etchant. When the conductive film layer structures 5 and 6 are not affected by the etchant, they are desorbed from the first and second optical adjustment film structures 3 and 4, thereby maintaining the integrity of the final circuit, and the first conductive film layer structure The copper conductor layer 53 of 5 also has a lower sheet resistance and meets the requirements of touch device related equipment manufacturers because of its relatively higher conductivity than indium tin oxide (ITO), so it can indeed achieve the purpose of the invention.

惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application of the present invention and the content of the patent specification still belong to Within the scope covered by the patent of the present invention.

2:透光性支撐基板 51:內側氧化銅層 21:第一表面 52:內側鎳銅合金層 22:第二表面 53:銅導體層 3:第一光學調整膜層結構 54:外側鎳銅合金層 31:光學調整層 55:外側氧化銅層 32:附著層 6:第二導電膜層結構 4:第二光學調整膜層結構 61:氧化銦錫層 41:第一光學調整層 62:銅導體層 42:第二光學調整層 63:鎳銅合金層 43:附著層 71:第一硬塗層 5:第一導電膜層結構 72:第二硬塗層2: Translucent support substrate 51: Inside copper oxide layer 21: The first surface 52: Inner nickel copper alloy layer 22: second surface 53: Copper conductor layer 3: The first optical adjustment film structure 54: Outer nickel-copper alloy layer 31: Optical adjustment layer 55: outer copper oxide layer 32: Adhesion layer 6: Second conductive film layer structure 4: The second optical adjustment film structure 61: Indium tin oxide layer 41: The first optical adjustment layer 62: Copper conductor layer 42: second optical adjustment layer 63: Nickel-copper alloy layer 43: Adhesion layer 71: The first hard coat 5: The first conductive film layer structure 72: second hard coat

本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一正視示意圖,說明現有一種現有之觸控裝置用之導電板;及 圖2是一正視示意圖,說明本發明觸控裝置用之導電板的一實施例。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: Figure 1 is a schematic front view illustrating an existing conductive plate used in a conventional touch device; and 2 is a schematic front view illustrating an embodiment of the conductive plate used in the touch device of the present invention.

2:透光性支撐基板 2: Translucent support substrate

21:第一表面 21: The first surface

22:第二表面 22: second surface

3:第一光學調整膜層結構 3: The first optical adjustment film structure

31:光學調整層 31: Optical adjustment layer

32:附著層 32: Adhesion layer

4:第二光學調整膜層結構 4: The second optical adjustment film structure

41:第一光學調整層 41: The first optical adjustment layer

51:內側氧化銅層 51: Inside copper oxide layer

52:內側鎳銅合金層 52: Inner nickel copper alloy layer

53:銅導體層 53: Copper conductor layer

54:外側鎳銅合金層 54: Outer nickel-copper alloy layer

55:外側氧化銅層 55: outer copper oxide layer

6:第二導電膜層結構 6: Second conductive film layer structure

61:氧化銦錫層 61: Indium tin oxide layer

62:銅導體層 62: Copper conductor layer

42:第二光學調整層 42: second optical adjustment layer

43:附著層 43: Adhesion layer

5:第一導電膜層結構 5: The first conductive film layer structure

63:鎳銅合金層 63: Nickel-copper alloy layer

71:第一硬塗層 71: The first hard coat

72:第二硬塗層 72: second hard coat

Claims (8)

一種觸控裝置用之導電板,包含: 一透光性支撐基板; 一第一光學調整膜層結構,形成於該透光性支撐基板之一第一表面,且沿一背向該透光性支撐基板之第一表面的第一堆疊方向依序包括一折射率大於2的光學調整層及一附著層; 一第二光學調整膜層結構,形成於該透光性支撐基板之一相反於該第一表面的第二表面,且沿一背向該透光性支撐基板之第二表面的第二堆疊方向依序包括一折射率大於2的第一光學調整層、一附著層,及一折射率小於該第一光學調整層的第二光學調整層; 一第一導電膜層結構,疊置於該第一光學調整膜層結構上,且沿該第一堆疊方向依序包括一內側氧化銅層、一內側鎳銅合金層、一銅導體層、一外側鎳銅合金層及一外側氧化銅層;及 一第二導電膜層結構,疊置於該第二光學調整膜層結構上,且沿該第二堆疊方向依序包括一氧化銦錫層、一銅導體層,及一鎳銅合金層。 A conductive plate for a touch device, including: A transparent supporting substrate; A first optical adjustment film structure is formed on a first surface of the translucent support substrate, and includes a refractive index greater than 2 optical adjustment layer and an adhesion layer; A second optical adjustment film structure formed on a second surface of the transparent supporting substrate opposite to the first surface and along a second stacking direction facing away from the second surface of the transparent supporting substrate Sequentially including a first optical adjustment layer with a refractive index greater than 2, an adhesion layer, and a second optical adjustment layer with a refractive index smaller than the first optical adjustment layer; A first conductive film layer structure is stacked on the first optical adjustment film structure and includes an inner copper oxide layer, an inner nickel-copper alloy layer, a copper conductor layer, and a copper oxide layer in sequence along the first stacking direction. An outer nickel-copper alloy layer and an outer copper oxide layer; and A second conductive film layer structure is stacked on the second optical adjustment film structure and includes an indium tin oxide layer, a copper conductor layer, and a nickel copper alloy layer in sequence along the second stacking direction. 如請求項1所述的觸控裝置用之導電板,其中,該第一導電膜層結構之內側氧化銅層與外側氧化銅層的厚度介於35 nm至45 nm間。The conductive plate for a touch device according to claim 1, wherein the thickness of the inner copper oxide layer and the outer copper oxide layer of the first conductive film layer structure is between 35 nm and 45 nm. 如請求項1所述的觸控裝置用之導電板,其中,該第一光學調整膜層結構與該第二光學膜層結構之附著層由非晶矽、一氧化矽或鉻所製成。The conductive plate for a touch device according to claim 1, wherein the adhesion layer of the first optical adjustment film structure and the second optical film structure is made of amorphous silicon, silicon monoxide or chromium. 如請求項1所述的觸控裝置用之導電板,其中,各附著層具有一小於5 nm的厚度。The conductive plate for a touch device according to claim 1, wherein each adhesion layer has a thickness of less than 5 nm. 如請求項1所述的觸控裝置用之導電板,其中,該第一光學調整膜層結構之光學調整層與該第二光學調整膜層結構之第一光學調整層是選自TiO 2、Ti 3O 5、Ta 2O 5、Nb 2O 5或ZrO 2;該第二光學調整膜層結構之第二光學調整層是SiO 2The conductive plate for a touch device according to claim 1, wherein the optical adjustment layer of the first optical adjustment film structure and the first optical adjustment layer of the second optical adjustment film structure are selected from TiO 2 , Ti 3 O 5 , Ta 2 O 5 , Nb 2 O 5 or ZrO 2 ; the second optical adjustment layer of the second optical adjustment film structure is SiO 2 . 如請求項1所述的觸控裝置用之導電板,還包含一第一硬塗層及一第二硬塗層,該第一硬塗層與該第二硬塗層分別形成於該透光性支撐基板的第一表面與第二表面上,以分別介於該第一光學調整膜層結構及該透光性支撐基板間與介於該第二光學調整膜層結構及該透光性支撐基板間。The conductive plate for a touch device according to claim 1, further comprising a first hard coating layer and a second hard coating layer, and the first hard coating layer and the second hard coating layer are respectively formed on the transparent The first surface and the second surface of the flexible support substrate are respectively interposed between the first optical adjustment film structure and the light-transmitting support substrate and between the second optical adjustment film structure and the light-transmitting support Between the substrates. 如請求項6所述的觸控裝置用之導電板,其中,該第一硬塗層與該第二硬塗層是由ZrO 2所製成。 The conductive plate for a touch device according to claim 6, wherein the first hard coating layer and the second hard coating layer are made of ZrO 2 . 如請求項1所述的觸控裝置用之導電板,其中,該透光性支撐基板是由聚對苯二甲酸二乙酯、環狀烯烴共聚物、無色聚醯亞胺、光學級聚醯亞胺或環狀烯烴聚合物所製成。The conductive plate for a touch device according to claim 1, wherein the light-transmitting support substrate is made of polyethylene terephthalate, cyclic olefin copolymer, colorless polyimide, and optical grade polyimide Made of imine or cyclic olefin polymer.
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CN1922541A (en) * 2004-02-23 2007-02-28 默克专利股份有限公司 Double layer transparent conductor scheme having improved etching properties for transparent electrodes in electro-optic displays
TW200827163A (en) * 2006-09-12 2008-07-01 Nitto Denko Corp Transparent conductive laminate and touch panel equipped with the same
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