CN108449927A - A kind of metallic film and preparation method thereof - Google Patents
A kind of metallic film and preparation method thereof Download PDFInfo
- Publication number
- CN108449927A CN108449927A CN201810316792.1A CN201810316792A CN108449927A CN 108449927 A CN108449927 A CN 108449927A CN 201810316792 A CN201810316792 A CN 201810316792A CN 108449927 A CN108449927 A CN 108449927A
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- Prior art keywords
- metallic film
- conductive layer
- layer
- photoresist layer
- substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0086—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single discontinuous metallic layer on an electrically insulating supporting structure, e.g. metal grid, perforated metal foil, film, aggregated flakes, sintering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention discloses a kind of metallic film and preparation method thereof, including provides a substrate；A conductive layer is formed on the substrate；A metallic film with preset pattern is formed on the conductive layer；The conductive layer is dissolved by solution, the metallic film is made to be detached from the substrate.By the above method, metallic film is made to have the effect of that shield effectiveness is high, light transmittance is high.
Description
Technical field
The present invention relates to electromangnetic spectrum fields more particularly to a kind of metallic film and preparation method thereof.
Background technology
In recent years, along with the fast development of informationized society, equipment associated with information rapidly develops and gradual
To popularizing, various electronic equipments, communication device display device such as CRT, liquid crystal, EL, PDP, FED are widely used in TV
Machine, PC, station and the guiding on airport are shown, for providing various information.These electronic equipments, pachinko, automatic gambling
Electromagnetic Interference (EMI) problem that the communication devices such as the electronic control such as rich machine game machine, mobile phone generate is also more and more serious.
Electromagnetic Interference can not only influence the manipulation accuracy of ambient electronics, cause maloperation, but also can be to people
Body health generates harmful effect.Therefore, higher and higher to the requirement of electromagnetic shielding material, in order to adapt to such requirement, people
Have developed various metallic films as electromagnetic shielding film.
The manufacturing method of these metallic films usually has the methods of sputtering method, etching method and silver-colored complex salt diffusion transfer method.It splashes
The method of penetrating refers to directly sputtering metallic silver and indium tin oxide (ITO) contour lowrefractive index layer on the glass substrate, or sputter at PET
It is combined on glass substrate again on diaphragm.Electromagnetic shielding film prepared by sputtering method, since its light transmittance is relatively low, sheet resistance is inclined
Height limits its application range.Etching method is fitted in copper foil in transparent PET film, photo-lithographical formed filament grid
Copper aperture plate, preparation process is complicated, and cost is higher.Silver-colored complex salt diffusion transfer method is coated with first on clear PET film
Palladium, rhodium etc. are catalyzed core, are then coated with silver emulsion, carry out physical development, then plated copper or nickel metal film, the method is due to residual
The catalysis core stayed absorbs light, therefore there is a problem of that light transmittance is low.
Meanwhile the existing method for making metallic film mostly uses greatly imprint process and shifts to obtain shielding grid (such as
CN201610412201.1 and CN201410464874.2), but all there are feelings inseparable when grid is detached with substrate and glue-line
Condition, especially when grid lines is relatively narrow, physical method for separation grid is more easy to defect occur with glue-line, influences shielding grid performance stabilization
Property.
Invention content
The purpose of the present invention, which essentially consists in, provides a kind of metallic film and preparation method thereof that shield effectiveness is high.
For achieving the above object, the present invention provides a kind of production method of metallic film, including provides a substrate；
A conductive layer is formed on the substrate；A metallic film with preset pattern is formed on the conductive layer；It is molten by solution
The conductive layer is solved, the metallic film is made to be detached from the substrate.
In a wherein embodiment, the conductive layer generation type is that conductive is deposited on the substrate.
In a wherein embodiment, the forming method of the metallic film with preset pattern includes：In the conduction
A patterned photoresist layer is formed on layer, the patterned photoresist layer makes the conductive layer for limiting the preset pattern
The part of exposure forms the preset pattern from the patterned photoresist layer；By metallic film material cover in conductive layer from
The part that the patterned photoresist layer is exposed forms the metallic film with preset pattern；Remove removing photoresistance layer.
In a wherein embodiment, the mode for forming a patterned photoresist layer includes：Photoresist layer material is covered in leading
In electric layer；The part of preset pattern described in the photoresist layer is etched away by exposure imaging mode.
In a wherein embodiment, the method that covers the metallic film is by electroforming mode by the metal foil membrane material
Material is deposited on the exposed conductive layer.
In a wherein embodiment, the solution can dissolve the conductive layer, and cannot dissolve the metallic film.
In a wherein embodiment, the metallic film is lattice-like pattern structure, and the lattice-like pattern structure is bee
Nest shape structure or square structure.
In a wherein embodiment, the lattice-like pattern structure line width is 100nm~50 μm, and thickness is 1~20 μm.
The present invention also provides a kind of specific production methods of metallic film, include the following steps：
S1：One substrate is provided, conductive layer is covered on substrate；
S2：Photoresist is coated on conductive layer, photoresist layer is formed；
S3：Patterned conductive layer is formed in photoresist layer by exposure, developing process, the patterned photoresist layer is used for
Metallic film preset pattern is limited, conductive layer part of exposure from the patterned photoresist layer is made to form the default figure
Shape；
S4：Metallic film material conductive layer is deposited on by way of electroforming to expose from the patterned photoresist layer
On the part come, the metallic film with the preset pattern is formed；
S5：Removing photoresistance layer is removed, obtains individual metallic film on the electrically conductive；
S6：Conductive layer is dissolved with solution-selective, metallic film is made to be detached from substrate.
The present invention also provides a kind of metallic film, the metallic film is obtained by above-mentioned production method.
The embodiment of the present invention is to provide a kind of production method of metallic film, by solution by conductive layer and metallic film
Separation, obtains complete metallic film, achievees the effect that shield effectiveness is high.
Description of the drawings
Fig. 1 is flow chart of steps of the embodiment of the present invention；
Fig. 2 is process flow chart of the embodiment of the present invention.
Specific implementation mode
It is of the invention to reach the technical approach and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Specific implementation mode, structure, feature and its effect of the present invention is described in detail as after in accompanying drawings and embodiments.
The embodiment of the present invention discloses a kind of production method of metallic film, including provides a substrate；Shape on the substrate
At a conductive layer；A metallic film with preset pattern is formed on the conductive layer；The conductive layer is dissolved by solution,
The metallic film is set to be detached from the substrate.To obtain the high metallic film of shield effectiveness.
It please refers to Fig.1 and Fig. 2, production method steps flow chart of the embodiment of the present invention, as described below.
S1：One substrate is provided, conductive layer is covered on substrate.
Specifically, providing a clean smooth substrate 1, then a conductive layer 2 is deposited on substrate 1.Wherein, conductive layer 2 is
Aluminium or iron.In other embodiments, conductive layer is covered on substrate 1 using hot pressing or sputtering mode.
S2：Photoresist is coated on conductive layer, photoresist layer is formed；
Specifically, being coated with photoresist on conductive layer 2, photoresist layer 3 is formed, photoresist is light-sensitive material.Due to photoresist layer 3
It can be used in photomask surface figure, therefore, eurymeric or minus photoresist all can be used as photoresist layer.Lighting is applied on conductive layer 2
Resistance layer 3 is the ability that photoresist layer 3 is utilized and does not have adsorbing metal ions.
S3：Patterned conductive layer is formed in photoresist layer by exposure, developing process, the patterned photoresist layer is used for
Metallic film preset pattern is limited, conductive layer part of exposure from the patterned photoresist layer is made to form the default figure
Shape.
It is to first pass through exposure process to form a patterned photoresist layer 3, by pre-designed pattern transfer to photoresist layer
On, developing procedure is then carried out again, and selective etch falls the part of institute's preset pattern in photoresist layer 3, makes 2 part of conductive layer from pre-
If exposure in figure, forms 3 figure of photoresist layer.
S4：Metallic film material conductive layer is deposited on by way of electroforming to expose from the patterned photoresist layer
On the part come, the metallic film with the preset pattern is formed.
Specifically, metallic film material is grown on exposed conductive layer by electroformed deposit method.Not due to photoresist layer 3
The ability for having adsorbing metal ions reaches and limits metallic film material growth, promotes the metallic film material figure in preset pattern
The effect of shape.Wherein, metallic film material is copper or nickel or silver.
S5：Removing photoresistance layer is removed, obtains individual metallic film on the electrically conductive.
The remaining photoresist layer 3 of removal, makes the metallic film 4 on conductive layer 2 expose completely, forms lattice-like pattern knot
Structure.Metallic film 4 is honeycomb-shaped structure or square structure, and grid line width is 100nm~50 μm, and thickness is 1~20 μm.According to need
It wants, metallic film 4 can be other graphic structures.
S6：Conductive layer is dissolved with solution-selective, metallic film is made to be detached from substrate.
Conductive layer is dissolved using solution-selective, metallic film 4 is made to fall off from substrate 1, reaches and obtains metallic film
Purpose.Wherein, solution is sodium hydroxide or dilute hydrochloric acid, and conductive layer and metallic film 4 cannot be same metal.In other embodiment
In, the conductive layer and metallic film of above-mentioned meaning can be other different metal materials.
It should be noted that above-mentioned solution used can only remove conductive layer this metal.Such as：Conductive layer is aluminium, metal foil
Film is copper, and solution is sodium hydroxide；Conductive layer is aluminium, and metallic film is nickel, and solution is sodium hydroxide；Conductive layer is iron, metal
Film is silver, and solution is dilute hydrochloric acid.
A kind of metallic film is also disclosed in the embodiment of the present invention, is obtained by above-mentioned production method.
The present invention is ingenious in design, has the following advantages.
1, by first forming a metallic film with preset pattern on the electrically conductive；Again the conduction is dissolved with solution
Layer makes metallic film be detached from substrate, obtains complete metallic film, achieve the effect that shield effectiveness is high.
2, since the present invention is made by exposure imaging and electroformed deposit mode, metallic film has translucency
It is good, the low effect of sheet resistance.
It should be noted that herein, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that process, method, article or device including a series of elements include not only those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including this
There is also other identical elements in the process of element, method, article or device.
It these are only the preferred embodiment of the present invention, be not intended to limit the scope of the invention, it is every to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of production method of metallic film, which is characterized in that including：One substrate is provided；One is formed on the substrate to lead
Electric layer；A metallic film with preset pattern is formed on the conductive layer；The conductive layer is dissolved by solution, is made described
Metallic film is detached from the substrate.
2. the production method of metallic film as described in claim 1, which is characterized in that the conductive layer generation type is that will lead
Electric layer material is deposited on the substrate.
3. the production method of metallic film as described in claim 1, which is characterized in that the metal foil with preset pattern
The forming method of film includes：A patterned photoresist layer is formed on the conductive layer, the patterned photoresist layer is for limiting
The fixed preset pattern makes conductive layer part of exposure from the patterned photoresist layer form the preset pattern；
Metallic film material is covered in conductive layer from the part that the patterned photoresist layer is exposed, being formed has preset pattern
Metallic film；Remove removing photoresistance layer.
4. the production method of metallic film as claimed in claim 3, which is characterized in that form the side of a patterned photoresist layer
Formula includes：Photoresist layer material is covered on conductive layer；It is etched away by exposure imaging mode and is preset described in the photoresist layer
The part of figure.
5. the production method of metallic film as claimed in claim 3, which is characterized in that the method for covering the metallic film is
The metallic film material is deposited on the exposed conductive layer by electroforming mode.
6. the production method of metallic film as described in claim 1, which is characterized in that the solution can dissolve the conduction
Layer, and the metallic film cannot be dissolved.
7. the production method of metallic film as described in claim 1, which is characterized in that the metallic film is lattice-like pattern
Structure, the lattice-like pattern structure are honeycomb-shaped structure or square structure.
8. the production method of metallic film as claimed in claim 7, which is characterized in that the lattice-like pattern structure line width is
100nm~50 μm, thickness are 1~20 μm.
9. a kind of production method of metallic film, which is characterized in that include the following steps：
S1：One substrate is provided, conductive layer is covered on substrate；
S2：Photoresist is coated on conductive layer, photoresist layer is formed；
S3：Patterned conductive layer is formed in photoresist layer by exposure, developing process, the patterned photoresist layer is for limiting
Metallic film preset pattern makes conductive layer part of exposure from the patterned photoresist layer form the preset pattern；
S4：Metallic film material is deposited on what conductive layer was exposed from the patterned photoresist layer by way of electroforming
On part, the metallic film with the preset pattern is formed；
S5：Removing photoresistance layer is removed, obtains individual metallic film on the electrically conductive；
S6：Conductive layer is dissolved with solution-selective, metallic film is made to be detached from substrate.
10. a kind of metallic film, which is characterized in that the metallic film passes through the making described in any one of claim 1-9
Method obtains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810316792.1A CN108449927B (en) | 2018-04-10 | 2018-04-10 | Metal film and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810316792.1A CN108449927B (en) | 2018-04-10 | 2018-04-10 | Metal film and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN108449927A true CN108449927A (en) | 2018-08-24 |
| CN108449927B CN108449927B (en) | 2021-11-02 |
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|---|---|---|---|
| CN201810316792.1A Active CN108449927B (en) | 2018-04-10 | 2018-04-10 | Metal film and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113327844A (en) * | 2021-05-27 | 2021-08-31 | 宁波市知行光学科技有限公司 | Method for manufacturing imaging plate and imaging plate |
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| CN1440234A (en) * | 2002-02-21 | 2003-09-03 | 大日本印刷株式会社 | Electromagnetic wave shield sheet and manufacture thereof |
| CN1540609A (en) * | 2003-04-25 | 2004-10-27 | 三星Sdi株式会社 | Electromagnetic wave shielding filter and its mfg. method |
| CN1658746A (en) * | 2004-02-19 | 2005-08-24 | 钰德科技股份有限公司 | Method for manufacturing metal shield |
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| CN108449927B (en) | 2021-11-02 |
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Address after: No.68 Xinchang Road, Suzhou Industrial Park, Suzhou, Jiangsu Province Patentee after: Suzhou Weiyeda Technology Co.,Ltd. Patentee after: SOOCHOW University Address before: No.68 Xinchang Road, Suzhou Industrial Park, Suzhou, Jiangsu Province Patentee before: IVTOUCH Co.,Ltd. Patentee before: SOOCHOW University |