CN202841679U

CN202841679U - ITO conducting film-based bus electrode

Info

Publication number: CN202841679U
Application number: CN 201220373176
Authority: CN
Inventors: 石勇
Original assignee: XIAMEN ZHONGTIAN SAIL ELECTRONIC TECHNOLOGY Co Ltd
Current assignee: XIAMEN ZHONGTIAN SAIL ELECTRONIC TECHNOLOGY Co Ltd
Priority date: 2012-07-31
Filing date: 2012-07-31
Publication date: 2013-03-27
Anticipated expiration: 2022-07-31

Abstract

Disclosed in the utility model is an ITO conducting film-based bus electrode that comprises a substrate, an ITO conducting film, a metal layer, a protective layer and a flexible circuit board. The ITO conducting film and the metal layer are successively arranged on the substrate by a sputtering coating way through a vacuum sputter coating and are formed into electrode shapes by exposure, development and etching; and anti-oxidant processing is carried out on the surfaces of the electrode shapes to form the protective layer. Besides, the flexible circuit board is provided with a standard interface and is bound together with the electrode-shaped ITO conducting film. Compared with the prior art, the technology employed by the utility model enables the provided bus electrode to be adapted to various wire widths and wire intervals, thereby realizing high adaptability; the metallic coating technology enables the bus electrode to be contacted with the ITO conducting film reliably, thereby realizing high reliability; the processing procedures of the metallic coating technology are reduced, the process cycle is reduced, and the manufacturing cost is lowered; and due to the arrangement of the metal layer, ITO scratching is reduced during the ITO conducting film processing process, thereby substantially improving the yield.

Description

A kind of ITO conducting film bus electrode

Technical field

The utility model relates to field of photoelectric technology, specifically, is a kind of ITO conducting film bus electrode.

Background technology

Contact panel, flexible solar battery, OLED show and illumination is applied to each optoelectronics industry field more and more, major function material wherein all is the ITO conducting film, the ITO conducting film has good translucent effect and conducting function, the ITO conducting film can be realized good conductive effect under very thin prerequisite, so both realized transparent functional, possesses again every electrical property, people electronic product is pursued without end under the stimulation of lighter, thinner, better visual effect, the ITO conducting film has obtained unprecedented extensive use.

The bus electrode of knowing all is to make of the method for silk-screen silver slurry; Method with silk-screen is made bus electrode, and electrode width is difficult to accomplish the bar shaped bus electrode of the width below 80 microns generally at 80～150 microns with conventional equipment and silver slurry.The area of bus electrode reaches 6%～8% of some device area like this, serious restriction the functional area of relevant device, and affect the appearance design of equipment, also restricted further developing of relevant device.

The technology that existing silk-screen silver slurry is made bus electrode, lack of homogeneity not only, cost is high, waste of material is serious, and environment is had certain pollution, and the poor adhesive force of Ag, the making precision is not high enough, and high for some electrode spacings requirements, the pattern of relative complex all is difficult for realizing.

The method of at present silk-screen silver slurry making bus electrode almost only is used for resistive touch screen in the touch-screen field, and for capacitive touch screen, frame is wider, affects the viewing area of display device.This method efficient is low, and precision is low, has restricted the fusion of touch-screen and display screen, and the restriction display screen is to the trend of large-size screen monitors narrow limit development.In flexible solar and OLED used, the reliability of bus electrode and convenience had directly affected popularization and the through engineering approaches of its product, and be low-cost, highly reliable, be convenient to dismounting and safeguard it is the prerequisite that product is able to extensive use.

The utility model content

The purpose of this utility model is for above problem, proposes a kind of ITO conducting film bus electrode, and bus electrode is reliably contacted with the ITO conducting film, and reliability is high, and manufacturing cost reduces, and promotes yields.

To achieve these goals, solution of the present utility model is:

A kind of ITO conducting film bus electrode; formed by base material, ITO conducting film, metal level, protective layer and flexible PCB; ITO conducting film and metal level by vacuum sputtering coating successively sputter on base material; ITO conducting film and metal level form electrode shape by exposure, development, etching; surface at electrode shape forms protective layer by anti-oxidant treatment; flexible PCB is with standard interface, and flexible PCB binds together with the ITO conducting film of making electrode shape.

Described metal layer material is one or more the alloy in aluminium, nickel, molybdenum, gold, silver or the copper.

Described base material is the organic transparent materials such as the inorganic transparent materials such as glass, or PET.

Described electrode shape is various rules or the irregular figures such as bar shaped, S type, T-shaped, lightning class.

A kind of ITO conducting film bus electrode; formed by ITO conducting film, metal level, protective layer and flexible PCB; metal level is formed on the two sides of ITO conducting film by vacuum sputtering coating; the two sides of ITO conducting film and metal level form electrode shape by exposure, development, etching respectively; surface in the double-sided electrode shape respectively forms protective layer by anti-oxidant treatment; flexible PCB is with standard interface, and flexible PCB binds together with the ITO conducting film of making electrode shape.

After adopting such scheme, the utility model compared with prior art, adapt to various live width line-spacings, strong adaptability, metallising process so that bus electrode reliably contact with the ITO conducting film, reliability is high, the metallising process manufacturing procedure reduces, and the process-cycle shortens, and manufacturing cost reduces, metal level is so that ITO scuffing minimizing in the ITO conducting film course of processing has promoted yields greatly.

Below in conjunction with drawings and the specific embodiments the utility model is done and to be described in further detail.

Description of drawings

Fig. 1 is a kind of ITO conducting film bus electrode schematic diagram;

Fig. 2 is ITO conducting film schematic diagram;

Fig. 3 is the schematic diagram behind the ITO film splash-proofing sputtering metal layer;

Fig. 4 is the schematic diagram after the coating;

Fig. 5 is the schematic diagram after the exposure;

Fig. 6 is schematic diagram after developing;

Fig. 7 is schematic diagram after the etching;

Fig. 8 is the rear schematic diagram that removes photoresist;

Fig. 9 is the schematic diagram of making the metal level anti-oxidant treatment.

Embodiment

Embodiment 1

A kind of ITO conducting film bus electrode that the utility model discloses as shown in Figure 1, is comprised of base material 2, ITO conducting film 1, metal level 3, protective layer 5 and flexible PCB 6.ITO conducting film 1 is positioned on the base material 2; metal level 3 is formed on the ITO conducting film 1 by vacuum sputtering coating; ITO conducting film 1 and metal level 2 form electrode shape by exposure, development, etching; surface at electrode shape forms protective layer 5 by anti-oxidant treatment; flexible PCB 6 is with standard interface, and flexible PCB 6 binds together with the ITO conducting film 1 of making electrode shape.

The manufacture method of embodiment 1, concrete steps are as follows.

At first, as shown in Figure 2, ITO conducting film 1 is positioned on the base material 2, and base material 2 is the organic transparent materials such as the inorganic transparent materials such as glass, or PET.Surface at ITO conducting film 1 plates metal level 3 by the vacuum sputtering coating method, as shown in Figure 3.Metal level 3 materials can be selected one or more the alloy in aluminium, nickel, molybdenum, gold, silver or the copper.

Then, at metal level 3 surface-coated photoresists 4, as shown in Figure 4, and in baking oven, solidify.

And then, be tiled in the surface of photoresists 4 with the patterned mask plate that designs, use ultraviolet light vertical irradiation mask plate and photoresists again, form the photoresists of curing and uncured photoresists, as shown in Figure 5, photoresists solidify to form photosensitive layer 41.

Afterwards, with the ITO conducting film 1 after the exposure of developer solution spray, remove uncured photoresists 4, as shown in Figure 6.

Then, with the ITO conducting film 1 that the etching solution spray developed, do not cover the part metal level 2 and the ITO conducting film 1 that solidify photosensitive layer 41 and be etched away, stay the electrode shape of required figure, as shown in Figure 7.Electrode shape is decided by the reticle pattern that designs, and can be various rules or the irregular figures such as bar shaped, S type, T-shaped, lightning class.

Subsequently, the ITO conducting film 1 of finishing above operation is put into the liquid that removes photoresist, soak certain hour, remove the photosensitive layer 41 of electrode shape surface cure, as shown in Figure 8.

To make again the ITO conducting film 1 of electrode shape and put into oxidation resistance liquid, carry out anti-oxidant treatment, form protective layer 5 on the surface of electrode shape, as shown in Figure 9.

At last, will bind together with the ITO conducting film 1 of making electrode shape with the flexible PCB 6 of standard interface, as shown in Figure 1, namely finished a kind of making of ITO conducting film bus electrode.Wherein, the other end of flexible PCB is used for the connection standard interface.

Embodiment 2

The present embodiment is from the different of embodiment 1, and embodiment 1 makes outside the single face ITO conducting film bus electrode, and the present embodiment 2 is to make two-sided ITO conducting film bus electrode.

Its making step is: the method on the two sides of two-sided ITO conducting film by vacuum sputtering coating plates metal level, and the method by coating is at the upper surface coating photoresists of two metal levels afterwards; Then with the graphic mask that designs photoresists are exposed, and then develop, etching and degumming process, the method of and then as embodiment 1, making electrode shape, upper and lower two surfaces at the ITO conducting film make identical or different electrode shape, at last electrode shape is carried out anti-oxidant treatment and binding, namely finish the making of two-sided ITO conducting film bus electrode.

Do not relate in all literary compositions the part all the prior art that maybe can adopt same as the prior art realized.The above is preferred embodiment of the present utility model, but the utility model also is not limited to above only embodiment, slightly does the protection range that improvement also will be considered as this patent on embodiment.

Claims

1. ITO conducting film bus electrode; it is characterized in that: formed by base material, ITO conducting film, metal level, protective layer and flexible PCB; ITO conducting film and metal level by vacuum sputtering coating successively sputter on base material; ITO conducting film and metal level form electrode shape by exposure, development, etching; surface at electrode shape forms protective layer by anti-oxidant treatment; flexible PCB is with standard interface, and flexible PCB binds together with the ITO conducting film of making electrode shape.

2. a kind of ITO conducting film bus electrode manufacture method according to claim 1 is characterized in that: metal layer material is one or more the alloy in aluminium, nickel, molybdenum, gold, silver or the copper.

3. a kind of ITO conducting film bus electrode manufacture method according to claim 1, it is characterized in that: base material is inorganic transparent material, or organic transparent material.

4. a kind of ITO conducting film bus electrode manufacture method according to claim 1, it is characterized in that: electrode shape is bar shaped, S type or T-shaped.

5. ITO conducting film bus electrode; it is characterized in that: formed by ITO conducting film, metal level, protective layer and flexible PCB; metal level is formed on the two sides of ITO conducting film by vacuum sputtering coating; the two sides of ITO conducting film and metal level form electrode shape by exposure, development, etching respectively; surface in the double-sided electrode shape respectively forms protective layer by anti-oxidant treatment; flexible PCB is with standard interface, and flexible PCB binds together with the ITO conducting film of making electrode shape.

6. a kind of ITO conducting film bus electrode manufacture method according to claim 5 is characterized in that metal layer material is one or more the alloy in aluminium, nickel, molybdenum, gold, silver or the copper.

7. a kind of ITO conducting film bus electrode manufacture method according to claim 5 is characterized in that electrode shape is bar shaped, S type or T-shaped.