CN113327844A - Method for manufacturing imaging plate and imaging plate - Google Patents
Method for manufacturing imaging plate and imaging plate Download PDFInfo
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- CN113327844A CN113327844A CN202110589021.1A CN202110589021A CN113327844A CN 113327844 A CN113327844 A CN 113327844A CN 202110589021 A CN202110589021 A CN 202110589021A CN 113327844 A CN113327844 A CN 113327844A
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- film layer
- imaging plate
- photoresist
- coating
- thickness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
The application discloses a method for manufacturing an imaging plate and the imaging plate, which relate to the technical field of manufacturing process, and the method for manufacturing the imaging plate comprises the steps of performing spin coating on a substrate to form a photoresist layer; exposing and developing the photoresist layer to form a reverse pattern of the photoetching plate; coating a film on the reverse pattern to form a shielding film layer; and putting the substrate plated with the shielding film layer into a preset solution, and dissolving the photoresist to obtain the imaging plate with the same pattern as the photoetching plate. Therefore, the imaging plate manufactured by the method for manufacturing the imaging plate can shield infrared light by utilizing the shielding film layer on the imaging plate, so that the infrared camera is calibrated.
Description
Technical Field
The application relates to the technical field of manufacturing processes, in particular to a method for manufacturing an imaging plate and the imaging plate.
Background
Nowadays, the use of infrared cameras is widely applied to the fields of military investigation, automatic driving, wild animal protection and the like, and the use scene of a visual system can be expanded by image information shot by the infrared cameras. The infrared camera needs to be calibrated before being used to obtain corresponding internal and external parameters, but because the sensing spectra of the infrared camera and a common visible light camera are different, the infrared light cannot be shielded by conventional materials, so that a black-and-white checkerboard calibration plate or a common circular array calibration plate in the prior art cannot clearly image under the infrared camera, and the black-and-white checkerboard calibration plate cannot be used for calibrating the infrared camera.
Disclosure of Invention
The application aims to provide a method for manufacturing an imaging plate and the imaging plate, which can calibrate an infrared camera.
The embodiment of the application is realized as follows:
a method for manufacturing an imaging plate comprises the steps of performing spin coating of photoresist on a substrate to form a photoresist layer; exposing and developing the photoresist layer to form a reverse pattern of the photoetching plate; coating a film on the reverse pattern to form a shielding film layer; and putting the substrate plated with the shielding film layer into a preset solution, and dissolving the photoresist to obtain an imaging plate with the same pattern as the photoetching plate.
In an embodiment, before the step of coating the film on the reverse pattern to form the shielding film, the method further includes: and coating a film on the surface of the reverse pattern to form a transition film layer.
In an embodiment, before the step of placing the substrate plated with the barrier film layer into a preset solution to dissolve the photoresist to obtain the infrared imaging plate, the method further includes: and coating a film on the shielding film layer to form a protective film layer.
In one embodiment, the predetermined solution is a photoresist removing solution or an acetone solution.
In one embodiment, the transition film layer is made of Cr, and the thickness of the transition film layer is in a range of 10nm to 20 nm.
In an embodiment, the material of the shielding film layer is Ag or Al, and the thickness of the shielding film layer is greater than 500 nm.
In one embodiment, the protective film is made of TiO2、SiO2、Al2O3One or more of (a) or (b),the thickness range of the protective film layer is 10 nm-50 nm.
In one embodiment, the coating method is evaporation coating or sputtering coating.
In an embodiment, the thickness of the photoresist layer is greater than the sum of the thickness of the transition film layer, the thickness of the shielding film layer and the thickness of the protection film layer.
An imaging plate comprising: the mask comprises a substrate, a transition film layer, a shielding film layer and a protection film layer, wherein the transition film layer is formed on the substrate; the shielding film layer is formed on the transition film layer; the protective film layer is formed on the shielding film layer; and the transition film layer and the shielding film layer are provided with preset patterns.
Compared with the prior art, the beneficial effect of this application is:
according to the method for manufacturing the imaging plate and the imaging plate, firstly, photoresist is coated on the substrate in a rotating mode to form a photoresist layer, then the photoresist layer is exposed and developed to form the reverse pattern of the photoetching plate, the reverse pattern is coated with a film to form a shielding film layer, finally the substrate plated with the shielding film layer is placed into a preset solution, the photoresist is dissolved, and the imaging plate with the same pattern as the photoetching plate is obtained. The imaging plate manufactured by the method can shield infrared light by using the shielding film layer on the imaging plate, so that the infrared camera is calibrated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing an imaging plate according to an embodiment of the present application.
Fig. 2 is a schematic view of a process for manufacturing an imaging plate according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a process for manufacturing an imaging plate according to an embodiment of the present application.
Fig. 4 is a schematic diagram of a process for manufacturing an imaging plate according to an embodiment of the present application.
Fig. 5 is a schematic view of a process for manufacturing an imaging plate according to an embodiment of the present application.
Reference numerals:
icon: 1-an imaging plate; 2-a photoresist layer; 3-a barrier film layer; 4-a transition film layer; 5-protective film layer; 6-substrate.
Detailed Description
The terms "first," "second," "third," and the like are used for descriptive purposes only and not for purposes of indicating or implying relative importance, and do not denote any order or order.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present application, it should be noted that the terms "inside", "outside", "left", "right", "upper", "lower", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when products of the application are used, and are used only for convenience in describing the application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the application.
In the description of the present application, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements.
The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings.
Fig. 1 is a flowchart illustrating a method for manufacturing an imaging plate 1 according to an embodiment of the present application. The method comprises the following steps:
step 110: a photoresist is spin-coated on the substrate 6 to form the photoresist layer 2.
In the above steps, as shown in fig. 2, the substrate 6 may be Si (silicon), Ge (chromium), or chalcogenide glass, and the shape of the substrate 6 may be square or circular. In one embodiment, the substrate 6 is made of chalcogenide glass, which is a glass containing sulfide, selenide, and antimonide as main components, including chalcogenide compound glass containing oxide. Chalcogenide glass is a special infrared glass material with wide transmission waveband range, excellent optical performance and wide application, has stable chemical property and strong acid resistance, can eliminate chromatic aberration in an infrared optical system, and is an ideal infrared lens material.
Step 120: the photoresist layer 2 is exposed and developed to form a reverse pattern of the reticle.
In the above steps, as shown in fig. 3, the pattern of the photolithography plate may be a checkerboard pattern, a solid circle array pattern, a two-dimensional code array or a concentric circle array, or other available patterns may be selected based on actual requirements.
Step 130: and coating a film on the reverse pattern to form a shielding film layer 3.
In the above step, as shown in fig. 4, the material of the shielding film layer 3 is Ag (silver) or Al (aluminum), the thickness of the shielding film layer 3 is greater than 500nm, and the Ag (silver) or Al (aluminum) has a good shielding effect on light in an infrared band, wherein the infrared band is light with a wavelength range of 780nm to 14 um. In one embodiment, the material of the shielding film 3 is Ag (silver), and the thickness of the shielding film 3 is 600 nm.
In one embodiment, the masking film 3 is formed on the reverse pattern by an evaporation coating method or a sputtering coating method.
In one embodiment, before the masking film 3 is formed on the reverse pattern, a film is first formed on the surface of the reverse pattern to form the transition film 4. The material of the transition film layer 4 can be Cr (chromium), and the thickness range of the transition film layer 4 is 10 nm-20 nm. In one embodiment, the thickness of the transition film layer 4 is 10 nm. The transition film layer 4 can increase the adhesive force between the shielding film layer 3 and the substrate 6, and because the sputtering threshold energy of the Cr (chromium) layer is nearly twice higher than that of Ag (silver) or Al (aluminum), and the Cr (chromium) layer is very compact and has high hardness, the effects of enhancing the adhesive force and reducing defects such as pinholes can be achieved, and the corrosion of free ions in the glass substrate to the Ag layer can be effectively prevented.
Step 140: and (3) putting the substrate 6 plated with the shielding film layer 3 into a preset solution, and dissolving the photoresist to obtain the imaging plate 1 with the same pattern as the photoetching plate.
In the above steps, the structure of the imaging plate 1 is shown in fig. 5, the predetermined solution is a photoresist removing solution or an acetone solution, and in one embodiment, the predetermined solution is a photoresist removing solution.
In an embodiment, before the substrate 6 coated with the blocking film layer 3 is placed in a predetermined solution, a film is coated on the blocking film layer 3 to form the protective film layer 5, wherein the protective film layer 5 is made of TiO2(titanium dioxide), SiO2(silica) and Al2O3(alumina) and the thickness of the protective film layer 5 is in the range of 10nm to 50 nm. In this embodiment, the material of the protective film layer 5 is TiO2(titanium dioxide), the thickness of the protective film layer 5 was 20 nm.
In an embodiment, the thickness of the photoresist layer 2 is greater than the sum of the thickness of the transition film layer 4, the thickness of the shielding film layer 3 and the thickness of the protective film layer 5, because the portion with the photoresist needs to be removed after coating, only when the sum of the thickness of the transition film layer 4, the thickness of the shielding film layer 3 and the thickness of the protective film layer 5 is less than the thickness of the photoresist, the liquid can be contacted with the photoresist when the preset solution is put into the solution for photoresist removal.
According to the method for manufacturing the imaging plate 1, firstly, photoresist is coated on the substrate 6 in a rotating mode to form the photoresist layer 2, then the photoresist layer 2 is exposed and developed to form the reverse pattern of the photoetching plate, the reverse pattern is coated with a film to form the shielding film layer 3, finally the substrate 6 plated with the shielding film layer 3 is placed into a preset solution, the photoresist is dissolved, and the imaging plate 1 with the same pattern as the photoetching plate is obtained. According to the imaging plate 1 manufactured by the method, infrared light can be shielded by the shielding film layer 3 on the imaging plate 1, so that the infrared camera can be calibrated.
It should be noted that the features of the embodiments in the present application may be combined with each other without conflict.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method of making an imaging plate, comprising:
spin-coating a photoresist on the substrate to form a photoresist layer;
exposing and developing the photoresist layer to form a reverse pattern of the photoetching plate;
coating a film on the reverse pattern to form a shielding film layer;
and putting the substrate plated with the shielding film layer into a preset solution, and dissolving the photoresist to obtain an imaging plate with the same pattern as the photoetching plate.
2. The method of claim 1, wherein coating the reverse pattern further comprises, before coating a masking film layer on the reverse pattern:
and coating a film on the surface of the reverse pattern to form a transition film layer.
3. The method according to claim 2, wherein before the step of placing the substrate coated with the barrier film layer into a predetermined solution to dissolve the photoresist to obtain the infrared imaging plate, the method further comprises:
and coating a film on the shielding film layer to form a protective film layer.
4. The method of claim 1, wherein the predetermined solution is a photoresist stripping solution or an acetone solution.
5. The method of claim 2, wherein the material of the transition film layer is Cr, and the thickness of the transition film layer is in a range of 10nm to 20 nm.
6. The method of claim 5, wherein the material of the barrier film layer is Ag or Al, and the thickness of the barrier film layer is greater than 500 nm.
7. The method of claim 3, wherein the material of the protective film layer is TiO2、SiO2、Al2O3The thickness of the protective film layer ranges from 10nm to 50 nm.
8. The method of claim 1, wherein the coating is performed by evaporation coating or sputter coating.
9. The method of claim 3, wherein the photoresist layer has a thickness greater than a sum of a thickness of the transition film layer, a thickness of the blocking film layer, and a thickness of the protective film layer.
10. An imaging plate, comprising:
a substrate;
the transition film layer is formed on the substrate;
the shielding film layer is formed on the transition film layer; and
a protective film layer formed on the blocking film layer;
and the transition film layer and the shielding film layer are provided with preset patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110589021.1A CN113327844A (en) | 2021-05-27 | 2021-05-27 | Method for manufacturing imaging plate and imaging plate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110589021.1A CN113327844A (en) | 2021-05-27 | 2021-05-27 | Method for manufacturing imaging plate and imaging plate |
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| CN113327844A true CN113327844A (en) | 2021-08-31 |
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| CN202110589021.1A Pending CN113327844A (en) | 2021-05-27 | 2021-05-27 | Method for manufacturing imaging plate and imaging plate |
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| JP2010048724A (en) * | 2008-08-22 | 2010-03-04 | Ihi Corp | Infrared camera adjustment method and infrared camera adjusting tool |
| KR101015613B1 (en) * | 2010-02-24 | 2011-02-17 | 한국기계연구원 | Method for forming metal pattern on transparent substrate |
| KR20120084448A (en) * | 2011-01-20 | 2012-07-30 | 한국산업기술대학교산학협력단 | Metal pattern forming method for forming metal pattern on substrate and substrate manufactured by the same |
| CN108449927A (en) * | 2018-04-10 | 2018-08-24 | 苏州维业达触控科技有限公司 | A kind of metallic film and preparation method thereof |
| CN108681166A (en) * | 2018-05-16 | 2018-10-19 | 京东方科技集团股份有限公司 | A kind of preparation method of substrate for display, substrate for display and display device |
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2021
- 2021-05-27 CN CN202110589021.1A patent/CN113327844A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010048724A (en) * | 2008-08-22 | 2010-03-04 | Ihi Corp | Infrared camera adjustment method and infrared camera adjusting tool |
| KR101015613B1 (en) * | 2010-02-24 | 2011-02-17 | 한국기계연구원 | Method for forming metal pattern on transparent substrate |
| KR20120084448A (en) * | 2011-01-20 | 2012-07-30 | 한국산업기술대학교산학협력단 | Metal pattern forming method for forming metal pattern on substrate and substrate manufactured by the same |
| CN108449927A (en) * | 2018-04-10 | 2018-08-24 | 苏州维业达触控科技有限公司 | A kind of metallic film and preparation method thereof |
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