TWI690937B - 具有側向耦合結構的非揮發性記憶體單元及包含其之非揮發性記憶體單元陣列 - Google Patents

具有側向耦合結構的非揮發性記憶體單元及包含其之非揮發性記憶體單元陣列 Download PDF

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Publication number
TWI690937B
TWI690937B TW105141797A TW105141797A TWI690937B TW I690937 B TWI690937 B TW I690937B TW 105141797 A TW105141797 A TW 105141797A TW 105141797 A TW105141797 A TW 105141797A TW I690937 B TWI690937 B TW I690937B
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TW
Taiwan
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gate
coupled
selection
selection gate
floating gate
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TW105141797A
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English (en)
Chinese (zh)
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TW201732799A (zh
Inventor
朴聖根
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南韓商愛思開海力士有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW105141797A 2016-01-22 2016-12-16 具有側向耦合結構的非揮發性記憶體單元及包含其之非揮發性記憶體單元陣列 TWI690937B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20160008354 2016-01-22
KR10-2016-0008354 2016-01-22
KR10-2016-0060451 2016-05-17
KR1020160060451A KR102554495B1 (ko) 2016-01-22 2016-05-17 수평적 커플링 구조를 갖는 불휘발성 메모리셀 및 이를 이용한 메모리 셀 어레이

Publications (2)

Publication Number Publication Date
TW201732799A TW201732799A (zh) 2017-09-16
TWI690937B true TWI690937B (zh) 2020-04-11

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TW105141797A TWI690937B (zh) 2016-01-22 2016-12-16 具有側向耦合結構的非揮發性記憶體單元及包含其之非揮發性記憶體單元陣列

Country Status (2)

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KR (1) KR102554495B1 (ko)
TW (1) TWI690937B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI787046B (zh) * 2021-02-09 2022-12-11 新加坡商新加坡優尼山帝斯電子私人有限公司 半導體元件記憶裝置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6276447B1 (ja) * 2017-03-24 2018-02-07 株式会社フローディア 不揮発性半導体記憶装置
TW201915818A (zh) * 2017-10-05 2019-04-16 香港商印芯科技股份有限公司 光學識別模組
KR102422839B1 (ko) * 2018-02-23 2022-07-19 에스케이하이닉스 시스템아이씨 주식회사 수평 커플링 구조 및 단일층 게이트를 갖는 불휘발성 메모리 소자
KR102385951B1 (ko) * 2018-02-23 2022-04-14 에스케이하이닉스 시스템아이씨 주식회사 프로그램 효율이 증대되는 원 타임 프로그래머블 메모리 및 그 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779978A (zh) * 2004-10-08 2006-05-31 三星电子株式会社 包括偏移有源区的半导体存储器件
US20080157092A1 (en) * 2006-12-22 2008-07-03 Fumitaka Arai Nonvolatile semiconductor memory
US20090146701A1 (en) * 2007-12-07 2009-06-11 Mitsuhiro Noguchi Semiconductor device including memory cell having charge accumulation layer
US7898039B2 (en) * 2006-10-19 2011-03-01 Samsung Electronics Co., Ltd. Non-volatile memory devices including double diffused junction regions
US20150131387A1 (en) * 2013-11-11 2015-05-14 Changmin Jeon Logic embedded nonvolatile memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102185079B1 (ko) * 2014-04-21 2020-12-01 에스케이하이닉스 주식회사 불휘발성 메모리소자 및 그 동작방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779978A (zh) * 2004-10-08 2006-05-31 三星电子株式会社 包括偏移有源区的半导体存储器件
US7898039B2 (en) * 2006-10-19 2011-03-01 Samsung Electronics Co., Ltd. Non-volatile memory devices including double diffused junction regions
US20080157092A1 (en) * 2006-12-22 2008-07-03 Fumitaka Arai Nonvolatile semiconductor memory
US20090146701A1 (en) * 2007-12-07 2009-06-11 Mitsuhiro Noguchi Semiconductor device including memory cell having charge accumulation layer
US20150131387A1 (en) * 2013-11-11 2015-05-14 Changmin Jeon Logic embedded nonvolatile memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI787046B (zh) * 2021-02-09 2022-12-11 新加坡商新加坡優尼山帝斯電子私人有限公司 半導體元件記憶裝置

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TW201732799A (zh) 2017-09-16
KR20170088265A (ko) 2017-08-01
KR102554495B1 (ko) 2023-07-12

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