TWI689090B - 感光元件及其製造方法 - Google Patents

感光元件及其製造方法 Download PDF

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TWI689090B
TWI689090B TW107118347A TW107118347A TWI689090B TW I689090 B TWI689090 B TW I689090B TW 107118347 A TW107118347 A TW 107118347A TW 107118347 A TW107118347 A TW 107118347A TW I689090 B TWI689090 B TW I689090B
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layer
top electrode
photosensitive
electrode
flat
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TW202005065A (zh
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張博超
陳瑞沛
黃國有
丘兆仟
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友達光電股份有限公司
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Priority to CN201810822629.2A priority patent/CN108962929A/zh
Priority to US16/360,037 priority patent/US11227874B2/en
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Abstract

一種感光元件及其製造方法，其中感光元件的製造方法包括：連續沉積第二導電層、感光材料層以及第一頂電極材料層於基板上；形成第一圖案化光阻層於第一頂電極材料層上；以第一圖案化光阻層為罩幕，圖案化第一頂電極材料層，以形成第一頂電極；移除第一圖案化光阻層；以第一頂電極為罩幕，圖案化感光材料層，以形成感光層；形成絕緣層於第一頂電極上，且絕緣層具有開口；以及形成第二頂電極於絕緣層上，第二頂電極透過開口而電性連接第一頂電極。

Description

感光元件及其製造方法
本發明是有關於一種電子元件及其製造方法，且特別是有關於一種感光元件及其製造方法。
隨著科技的進展，個人用電子設備的功能日益增加。舉例來說，現在市面上的手機往往除了通話功能以外，更包含了照相功能、錄影功能、記事功能、上網功能……等等生活中時常會使用的功能。在這些具備多功能的電子設備中，往往設置有感光元件，感光元件能偵測電子產品所處之環境的光線，除了能幫助使用者獲得更佳的拍照、錄影品質外，部分的感光元件還能偵測使用者手指表面的起伏，使電子產品具備指紋辨識之功能。要如何提升感光元件的成像品質以準確的辨識使用者的指紋是目前各家廠商亟欲解決的問題。
本發明提供一種感光元件的製造方法，能解決感光層的介面受損導致成像不佳的問題。
本發明提供一種感光元件，能解決感光層的介面受損導致成像不佳的問題。
本發明的一種感光元件的製造方法，包括連續沉積第二導電層、感光材料層以及第一頂電極材料層於基板上。接著，形成第一圖案化光阻層於第一頂電極材料層上，再以第一圖案化光阻層為罩幕，圖案化第一頂電極材料層，以形成第一頂電極。之後，移除第一圖案化光阻層，再以第一頂電極為罩幕，圖案化感光材料層，以形成感光層。接著，形成絕緣層於第一頂電極上。絕緣層具有開口。再來，形成第二頂電極於絕緣層上，且第二頂電極透過開口而電性連接第一頂電極。
本發明的一種感光元件，包括底電極、感光層、第一頂電極、絕緣層以及第二頂電極。底電極、感光層以及第一頂電極依續堆疊於基板上。感光層的材料包括富矽氧化物。底電極與感光層之間具有實質平坦的介面。絕緣層設置於第一頂電極上。絕緣層覆蓋第一頂電極和感光層和底電極。絕緣層具有開口。第二頂電極透過開口而電性連接第一頂電極。
基於上述，本發明的感光元件及其製造方法可以改善感光元件成像不佳的問題，提升顯示品質。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
在下文中將參照附圖更全面地描述本發明，在附圖中示出了本發明的示例性實施例。如本領域技術人員將認識到的，可以以各種不同的方式修改所描述的實施例，而不脫離本發明的精神或範圍。
除非另有定義，本文使用的所有術語（包括技術和科學術語）具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是，諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義，並且將不被解釋為理想化的或過度正式的意義，除非本文中明確地這樣定義。
本文參考作為理想化實施例的示意圖的截面圖來描述示例性實施例。因此，可以預期到作為例如製造技術及/或（and/or）公差的結果的圖示的形狀變化。因此，本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀，而是包括例如由製造導致的形狀偏差。例如，示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外，所示的銳角可以是圓的。因此，圖中所示的區域本質上是示意性的，並且它們的形狀不是旨在示出區域的精確形狀，並且不是旨在限制權利要求的範圍。
圖1A至圖1O是依照本發明一實施例的一種感光元件的製造流程示意圖。圖2是依照本發明一實施例的一種感光元件的部分元件的上視示意圖。圖1O對應了圖2剖面線A-A’的位置，且圖2省略繪示了圖1O中的部分構件。
請參考圖1A，提供基板SB，並於基板SB上形成圖案化第一導電層M1。基板SB例如為硬質基板（rigid substrate）或可撓式基板（flexible substrate）等。舉例而言，基板SB的材質可為玻璃、塑膠、複合材質或其他可以提供支撐且可製作板狀結構的材質。
圖案化第一導電層M1包括閘極G以及電容電極CE。閘極G電性連接至掃描線。電容電極CE位於兩相鄰的掃描線之間。圖案化第一導電層M1的材質為導電材料。舉例而言，圖案化第一導電層M1的材質可為單層或多層堆疊之金屬材料，例如選自由銅（Copper，Cu）、鉬（Molybdenum，Mo）、鈦（Titanium, Ti）、鋁（Aluminum，Al）、鎢（Tungsten，W）、銀（Silver，Ag）、金（Gold，Au）及其合金所組成之族群中的至少之一。圖案化第一導電層M1可透過微影蝕刻製程來圖案化金屬材料而製作，但不須以此為限。
請參考圖1B，於基板SB以及圖案化第一導電層M1上形成閘絕緣層GI。圖案化第一導電層M1位於基板SB與閘絕緣層GI之間。閘絕緣層GI可為單層結構或多層堆疊的複合結構，且閘絕緣層GI之材質例如是氮化矽、氧化矽、氮氧化矽、其他合適之介電材料或上述之組合。
請繼續參考圖1B，在形成閘絕緣層GI之後，於閘絕緣層GI上形成半導體圖案層SM。半導體圖案層SM與閘極G重疊。半導體圖案層SM與閘極G重疊藉由閘絕緣層GI彼此分隔而不接觸。在本實施例中，半導體圖案層SM的表面形成有歐姆接觸層OC，然而本發明不以此為限。半導體圖案層SM可為單層或多層結構，其包含非晶矽、多晶矽、微晶矽、單晶矽、有機半導體材料、氧化物半導體材料（例如：銦鋅氧化物、銦鎵鋅氧化物、其它合適的材料或上述之組合）、其它合適的材料、含有摻雜物（dopant）於上述材料中或上述材料之組合。
歐姆接觸層OC的材料例如是n型摻雜半導體，其形成方法例如是以化學氣相沉積法沉積半導體並同步進行n型離子摻雜，然而本發明不以此為限。在其他實施例中，歐姆接觸層OC的材料也可以是p型摻雜半導體。
請參考圖1C，於半導體圖案層SM與閘絕緣層GI上形成第二導電層M2。第二導電層M2覆蓋閘絕緣層GI、半導體圖案層SM、歐姆接觸層OC以及電容電極CE。半導體圖案層SM與歐姆接觸層OC位於閘絕緣層GI與第二導電層M2之間。在本實施例中，第二導電層M2例如是鈦和鋁多層堆疊的Ti/Al/Ti金屬結構，但本發明不限於此。第二導電層M2可以為單層結構或多層堆疊的複合結構，且其材質例如是鈦、鋁、鉬、銀、鈀（Palladium，Pd）或其合金等金屬材料。第二導電層M2之材料可與圖案化第一導電層M1之材料相同或不同。
請參考圖1D，於第二導電層M2上依序沉積感光材料層PS以及第一頂電極材料層TE1。第二導電層M2、感光材料層PS以及第一頂電極材料層TE1是連續沉積於基板SB上。在本實施例中，感光材料層PS的材料包括富矽氧化物，但不限於此，例如：PIN材料或PN材料。根據其他實施例，感光材料層PS的材料包括富矽氮化物、富矽氮氧化物、富矽碳化物、富矽碳氧化物、氫化富矽氧化物、氫化富矽氮化物、氫化富矽碳化物或其組合。
請參考圖1E，於第一頂電極材料層TE1上形成第一圖案化光阻層PR1。在本實施例中，第一圖案化光阻層PR1與電容電極CE重疊，但本發明不以此為限。
請參考圖1F，以第一圖案化光阻層PR1為罩幕，圖案化第一頂電極材料層TE1，以形成第一頂電極TE1’。在本實施例中，第一頂電極TE1’與電容電極CE重疊，但本發明不以此為限。在本實施例中，第一頂電極TE1’可為透明導電材料，例如金屬氧化物，例如：銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物或者是上述至少二者之堆疊層。
請參考圖1G，移除第一圖案化光阻層PR1。
請參考圖1H，以第一頂電極TE1’為罩幕，圖案化感光材料層PS，以形成感光層PS’。在本實施例中，感光層PS’與電容電極CE重疊，但本發明不以此為限。在較佳的實施例中，感光層PS’以及第一頂電極TE1’於基板SB垂直投影的尺寸實質相等。需說明的是，以第一頂電極TE1’為罩幕對感光材料層PS進行蝕刻製程時，亦可能發生側向蝕刻的情況，使蝕刻後形成的感光層PS’於接近第一頂電極TE1’處可能會有一些側向蝕刻。感光層PS’的材料和感光材料層PS相同，在此不再贅述。
請參考圖1I，於第二導電層M2上形成第二圖案化光阻層PR2。第二圖案化光阻層PR2具有對應半導體圖案層SM的開口OP以暴露出部分的第二導電層M2。
請參考圖1J，以第二圖案化光阻層PR2為罩幕，圖案化第二導電層M2，以定義出圖案化電極層M2’以及底電極BE。底電極BE連接圖案化電極層M2’。在本實施例中，部分的歐姆接觸層OC會被一併移除，以留下歐姆接觸層OC’。
圖案化電極層M2’覆蓋部分半導體圖案層SM。圖案化電極層M2’包括源極S、汲極D以及資料線DL（繪示於圖2）。在本實施例中，源極S以及汲極D可藉由濕式蝕刻劑（etchant）蝕刻所形成，但本發明不以此為限。濕式蝕刻劑例如為硫酸、磷酸、硝酸與醋酸或至少上述二者之混合、鋁酸蝕刻液或其它適合的蝕刻劑。源極S電性連接至資料線DL，汲極D電性連接至底電極BE，且源極S與汲極D電性連接至半導體圖案層SM。
底電極BE與電容電極CE重疊且藉由閘絕緣層GI彼此分隔而不接觸。底電極BE、感光層PS’以及第一頂電極TE1’依續堆疊於基板SB上。
圖案化以形成底電極BE的第二導電層M2、圖案化以形成感光層PS’的感光材料層PS以及圖案化以形成第一頂電極TE1’的第一頂電極材料層TE1是連續沉積於基板SB上，也可以說底電極BE、感光材料層PS以及第一頂電極材料層TE1是連續沉積於基板SB上。舉例來說，沉積第二導電層M2之後，接著再於第二導電層M2中至少底電極BE的部分上沉積感光材料層PS以及第一頂電極材料層TE1。第二導電層M2、感光材料層PS以及第一頂電極材料層TE1是連續沉積於基板SB上。在一些實施例中，底電極BE與感光層PS’之間具有實質平坦的介面。在一些實施例中，感光層PS’與第一頂電極TE1’之間具有實質平坦的介面，藉由連續沉積的方式，可以減少膜層與膜層之間的介面受到損傷，使膜層之間的介面較為平坦，解決感光元件成像不佳的問題，提升顯示裝置的顯示品質。
在本實施例中，開關元件T例如是底部閘極型薄膜電晶體，其包括閘極G、源極S、汲極D以及半導體圖案層SM，然而本發明不以此為限。在其他實施例中，開關元件T也可以是頂部閘極型薄膜電晶體，或其他適合之薄膜電晶體。開關元件T電性連接至底電極BE。
資料線DL與掃描線SL彼此交錯設置（繪示於圖2），且資料線DL與掃描線SL之間夾有閘絕緣層GI。本發明之實施例，是以掃描線SL的延伸方向與資料線DL的延伸方向不平行為例。較佳的是，掃描線SL的延伸方向與資料線DL的延伸方向互相垂直。
請參考圖1K，移除第二圖案化光阻層PR2。
請參考圖1L，於第一頂電極TE1’上形成絕緣層IL，且絕緣層IL具有開口O1。絕緣層IL覆蓋第一頂電極TE1’，開口O1暴露出部分第一頂電極TE1’。絕緣層IL覆蓋感光層PS’和底電極BE。底電極BE和感光層PS’之間不具有絕緣層IL。絕緣層IL的材料包含無機材料（例如：氧化矽、氮化矽、氮氧化矽、其它合適的材料或上述至少二種材料的堆疊層）、有機材料、其它合適的材料或上述之組合。
請參考圖1M，於絕緣層IL上形成第二頂電極TE2，至此大致完成感光元件10。部分絕緣層IL位於第一頂電極TE1’與第二頂電極TE2之間。第二頂電極TE2透過開口O1而電性連接第一頂電極TE1’。在本實施例中，第二頂電極TE2的厚度t2大於第一頂電極TE1’的厚度t1。在本實施例中，感光層PS’是平坦的，因此可以使底電極BE與第一頂電極TE1’之間的重疊面積最大化，藉此提升兩者之間的有效電場。在本實施例中，第二頂電極TE2材料可和第一頂電極TE1’相同或不同，第二頂電極TE2可為透明導電材料，材料例如金屬氧化物，如：銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物或者是上述至少二者之堆疊層。
請參考圖1N，於第二頂電極TE2上形成遮光層M3。遮光層M3與閘極G重疊。遮光層M3的材質可為單層或多層堆疊之金屬材料（例如選自由銅、鉬、鈦、鋁、鎢、銀、金及其合金所組成之族群中的至少之一）、樹脂材料（例如聚醯亞胺、丙烯酸酯或其他合適的樹脂材料）、石墨或其他合適的材料。
請參考圖1O，於第二頂電極TE2上形成平坦層FL。平坦層FL覆蓋第二頂電極TE2。在本實施例中，平坦層FL的材料為有機材料，例如聚酯類（PET）、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類、其它合適的材料或上述之組合，然而本發明不以此為限。根據其他實施例，平坦層FL的材質也可以是無機材料（例如氧化矽、氮化矽、氮氧化矽、其它合適的材料或上述至少二種材料的堆疊層）、其它合適的材料或上述之組合。
平坦層FL的厚度大於2微米(μm)且小於或等於25微米。在較佳的實施例中，平坦層FL的厚度大於12微米(μm)且小於或等於25微米。在本實施例中，提高平坦層FL的厚度可以增加電子元件對靜電放電（electrostatic discharge；ESD）的耐受度。在本實施例中，平坦層FL的厚度大於25微米時，容易造成感光元件感應不良。
在本實施例中，平坦層的介電強度大於200MV/m。增強平坦層的介電強度可以提升電子元件對靜電放電（electrostatic discharge；ESD）的耐受度。進一步地，可以增加電子元件的使用年限。
基於上述，底電極BE、感光層PS’以及第一頂電極TE1’藉由連續沉積形成，可以減少感光元件10中的膜層與膜層之間的介面受到損傷，解決感光元件成像不佳的問題，提升顯示裝置的顯示品質。
圖3是依照本發明另一實施例的一種感光元件的剖面示意圖。在此必須說明的是，圖3的實施例沿用圖1A~1O、圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。
請參考圖3，在本實施例中，形成平坦層FL的方法包括先形成第一有機平坦材料層於第二頂電極TE2上，固化第一有機平坦材料層以形成第一有機平坦層FL1，再形成第二有機平坦材料層於第一有機平坦層FL1上，固化第二有機平坦材料層以形成第二有機平坦層FL2。兩層有機平坦層，每一次塗布的有機平坦材料可以較薄，固化時可使材料固化較完全，避免固化不完全而使感光元件品質不良。也就是說，在本實施例中，平坦層FL包括兩層有機平坦層，但不以此為限。在其他實施例中，平坦層FL可以包括一層或超過兩層的有機平坦層。
在本實施例中，形成平坦層FL之後，於平坦層FL上形成透明導電層ITO。透明導電層ITO例如是全面地覆蓋於平坦層FL上。透明導電層ITO電性連接至接地電壓。透明導電層ITO的材質包括金屬氧化物，例如是鎵鋅氧化物、銦錫氧化物或者是銦鋅氧化物。
在本實施例中，感光元件20還包括背光模組100。背光模組100位於基板SB下方。當背光模組100射出之光線L照射到位於透明導電層ITO上方的待測物OB，並被待測物OB反射至感光層PS’。於一實施例中，待測物OB例如為手指，感光元件20可偵測手指上指紋的情況。
基於上述，藉由連續沉積底電極BE、感光層PS’以及第一頂電極TE1’，可以減少感光元件20中的膜層與膜層之間的介面受到損傷，解決感光元件成像不佳的問題，提升顯示裝置的顯示品質。
圖4是依照本發明另一實施例的一種感光元件的上視示意圖。圖5是根據圖4的剖面線B-B’繪示的感光元件的剖面示意圖。在此必須說明的是，圖4與圖5的實施例沿用圖3的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。
圖5的實施例與圖3的實施例的區別的特點在於：以圖案化導線層CL取代透明導電層ITO。
請參考圖4及圖5，在本實施例的感光元件30中，於第二頂電極TE2上形成平坦層FL。雖然本實施例僅形成一層平坦層，但本發明不以此為限。在其他實施例中，平坦層FL可以是兩層以上。
在形成平坦層FL之後，於平坦層FL上形成圖案化導線層CL。圖案化導線層CL位於平坦層FL上且與開關元件T重疊。在本實施例中，圖案化導線層CL還重疊於掃描線SL及資料線DL，可以避免降低開口率。圖案化導線層CL電性連接至接地電壓。在本實施例中，圖案化導線層CL具有抗靜電的功能，可以提升電子元件對靜電放電的耐受度。進一步地，可以增加電子元件的使用年限。
基於上述，底電極BE、感光層PS’以及第一頂電極TE1’藉由連續沉積形成，可以減少感光元件中的膜層與膜層之間的介面受到損傷，解決感光元件成像不佳的問題，提升顯示裝置的顯示品質。此外，感光元件30藉由具有抗靜電功能的圖案化導線層CL，可以提升電子元件對靜電放電的耐受度。
綜上所述，本發明的感光元件及其製造方法，藉由連續沉積底電極、感光材料層以及第一頂電極材料層，可以減少感光元件中的膜層與膜層之間的介面受到損傷，解決感光元件成像不佳的問題，提升顯示裝置的顯示品質。此外，藉由具有高介電強度的平坦層或是具有抗靜電功能的圖案化導線層，可以提升電子元件對靜電放電的耐受度，並且增加電子元件的使用年限。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10、20、30：感光元件 100：背光模組 A-A’、B-B’：剖面線 BE：底電極 CE：電容電極 CL：圖案化導線層 D：汲極 DL：資料線 FL：平坦層 FL1：第一有機平坦層 FL2：第二有機平坦層 G：閘極 GI：閘絕緣層 IL：絕緣層 ITO：透明導電層 L：光線 M1：圖案化第一導電層 M2：第二導電層 M2’：圖案化電極層 M3：遮光層 O1：開口 OB：待測物 OC、OC’：歐姆接觸層 PR1：第一圖案化光阻層 PR2：第二圖案化光阻層 PS：感光材料層 PS’：感光層 S：源極 SB：基板 SL：掃描線 SM：半導體圖案層 T：開關元件 t1、t2：厚度 TE1：第一頂電極材料層 TE1’：第一頂電極 TE2：第二頂電極
圖1A至圖1O是依照本發明一實施例的一種感光元件的製造流程示意圖。 圖2是依照本發明一實施例的一種感光元件的部分元件的上視示意圖。 圖3是依照本發明另一實施例的一種感光元件的剖面示意圖。 圖4是依照本發明另一實施例的一種感光元件的部分元件的上視示意圖。 圖5是根據圖4的剖面線B-B’繪示的感光元件的剖面示意圖。
10：感光元件 A-A’：剖面線 BE：底電極 CE：電容電極 D：汲極 FL：平坦層 G：閘極 GI：閘絕緣層 IL：絕緣層 M2’：圖案化電極層 M3：遮光層 O1：開口 OC’：歐姆接觸層 PS’：感光層 S：源極 SB：基板 SM：半導體圖案層 T：開關元件 TE1’：第一頂電極 TE2：第二頂電極

Claims (19)

  1. 一種感光元件的製造方法，包括：連續沉積一第二導電層、一感光材料層以及一第一頂電極材料層於一基板上；形成一第一圖案化光阻層於該第一頂電極材料層上；以該第一圖案化光阻層為罩幕，圖案化該第一頂電極材料層，以形成一第一頂電極；移除該第一圖案化光阻層；以該第一頂電極為罩幕，圖案化該感光材料層，以形成一感光層；形成一絕緣層於該第一頂電極上，且該絕緣層具有一開口；以及形成一第二頂電極於該絕緣層上，該第二頂電極透過該開口而電性連接該第一頂電極。
  2. 如申請專利範圍第1項所述的製造方法，其中於連續沉積該第二導電層、該感光材料層以及該第一頂電極材料層於該基板上之前更包括：形成一圖案化第一導電層於該基板上；形成一閘絕緣層於該圖案化第一導電層上；以及形成一半導體圖案層於該閘絕緣層上，其中該第二導電層形成於該半導體圖案層與該閘絕緣層上；且於形成該感光層之後且形成該絕緣層之前更包括： 形成一第二圖案化光阻層於該第二導電層上；以及以該第二圖案化光阻層為罩幕，圖案化該第二導電層，以定義出一圖案化電極層以及一底電極，其中該底電極連接該圖案化電極層，該圖案化電極層覆蓋部分該半導體圖案層。
  3. 如申請專利範圍第2項所述的製造方法，其中該圖案化第一導電層包括與該半導體圖案層重疊的一閘極以及與該底電極重疊的一電容電極。
  4. 如申請專利範圍第2項所述的製造方法，更包括：形成一平坦層於該第二頂電極上；以及形成一圖案化導線層於該平坦層上，且該圖案化導線層重疊於該圖案化第一導電層及該圖案化電極層，其中該圖案化導線層電性連接至一接地電壓。
  5. 如申請專利範圍第1項所述的製造方法，更包括：形成一平坦層於該第二頂電極上，其中該平坦層的介電強度大於200MV/m。
  6. 如申請專利範圍第1項所述的製造方法，更包括：形成一平坦層於該第二頂電極上，其中該平坦層為一有機材料，且該平坦層厚度大於2微米(μm)且小於或等於25微米。
  7. 如申請專利範圍第1項所述的製造方法，更包括：形成一平坦層於該第二頂電極上，其中形成該平坦層包括先形成一第一有機平坦材料層於該第二頂電極上，固化該第一有機平坦材料層以形成一第一有機平坦層，再形成一第二有機平坦材 料層於該第一有機平坦層上，固化該第二有機平坦材料層以形成一第二有機平坦層。
  8. 如申請專利範圍第1項所述的製造方法，更包括：形成一平坦層於該第二頂電極上；以及形成一透明導電層於該平坦層上，且該透明導電層電性連接至一接地電壓。
  9. 如申請專利範圍第1項所述的製造方法，其中該感光層的材料包括富矽氧化物。
  10. 一種感光元件，包括：一底電極、一感光層以及一第一頂電極依續堆疊於一基板上，其中該感光層的材料包括富矽氧化物，其中該底電極與該感光層之間具有實質平坦的介面；一絕緣層，設置於該第一頂電極上，且覆蓋該第一頂電極和該感光層和該底電極，且該絕緣層具有一開口；一第二頂電極，透過該開口而電性連接該第一頂電極；以及一開關元件，直接連接該底電極，其中該開關元件的汲極、該開關元件的源極以及該底電極屬於相同金屬膜層。
  11. 如申請專利範圍第10項所述的感光元件，其中該感光層以及該第一頂電極於該基板垂直投影的尺寸實質相等。
  12. 如申請專利範圍第10項所述的感光元件，其中該第二頂電極的厚度大於該第一頂電極的厚度。
  13. 如申請專利範圍第10項所述的感光元件，其中部分該絕緣層位於該第一頂電極與該第二頂電極之間。
  14. 如申請專利範圍第10項所述的感光元件，其中該底電極和該感光層之間不具有該絕緣層。
  15. 如申請專利範圍第10項所述的感光元件，更包括：一平坦層，覆蓋該第二頂電極。
  16. 如申請專利範圍第15項所述的感光元件，其中該平坦層的介電強度大於200MV/m。
  17. 如申請專利範圍第15項所述的感光元件，其中該平坦層為一有機材料且厚度大於2微米(μm)且小於或等於25微米。
  18. 如申請專利範圍第15項所述的感光元件，更包括：一圖案化導線層，位於該平坦層上，且與該開關元件重疊，其中該圖案化導線層電性連接至一接地電壓。
  19. 如申請專利範圍第15項所述的感光元件，更包括：一透明導電層，位於該平坦層上，且電性連接至一接地電壓。
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