TWI688121B - Light emitting diode structure - Google Patents

Abstract

A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum first width. The electric contact layer has a maximum second width and is disposed on the dielectric layer. The semiconductor stack has a maximum third width and is disposed on the electric contact layer. The semiconductor stack includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer, the light emitting layer, and the second type semiconductor layer substantially smaller than or equal to the maximum third width. The insulation layer covers at least one sidewall of the base layer, one sidewall of the electric contact layer, and one sidewall of the semiconductor stack. The maximum second width is greater than the maximum third width, and the maximum second width is less than or equal to the maximum first width.

Description

Light emitting diode structure

The invention relates to a light-emitting diode structure.

The micro light emitting diode (micro LED) is to reduce the size of the traditional light emitting diode to the micrometer (μm) level, and the target yield must reach more than 99%. However, the micro-luminescence diode process currently faces quite a few technical challenges, among which Mass Transfer technology is the most difficult key process. In addition, many technical problems, including precision of equipment, transfer yield, transfer time, alignment problems, rework property and processing cost, need to be solved urgently.

For example, the current technology used to manufacture micro-luminescent diodes is to define the micro-luminescent diode structure from the manufacturing process, and then join the micro-luminescent diode structure to the first temporary substrate, and peel it through the laser (laser Lift-off (LLO) technology removes the sapphire substrate, and then uses the bonding material to bond the micro-luminescent diode structure to the second temporary substrate. Next, after removing the first temporary substrate and fabricating the support structure, the bonding material is etched, and finally the epitaxial structure in the micro-light emitting diode structure is transferred. In the above process, two temporary substrate joints and two temporary substrate removal processes are required Cheng, in addition to poor yield loss control, after the stress of the epitaxial structure is released, the spacing between the microluminescent diodes will also be different from the original design, causing alignment problems during transfer.

One aspect of the present invention provides a light-emitting diode structure that includes a base layer, an electrical contact layer, a semiconductor stack, and an insulating layer. The base layer has the largest first width. The electrical contact layer has a maximum second width and is disposed on the base layer. The semiconductor stack has a maximum third width and is disposed on the electrical contact layer. The semiconductor stack includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer that are sequentially stacked, wherein the widths of the first-type semiconductor layer, the light-emitting layer, and the second-type semiconductor layer are substantially less than or equal to the maximum third width. The insulating layer covers at least one side wall of the base layer, one side wall of the electrical contact layer and one side wall of the semiconductor stack. The maximum second width is greater than the maximum third width, and the maximum second width is less than or equal to the maximum first width.

According to some embodiments of the present invention, the electrical contact layer is a single layer. The maximum second width is substantially equal to the maximum first width.

According to some embodiments of the present invention, the electrical contact layer includes an ohmic contact layer and a first metal layer. The ohmic contact layer has a maximum fourth width and is disposed between the semiconductor stack and the base layer, and the first metal layer has a maximum fifth width and is disposed between the ohmic contact layer and the base layer. The maximum fourth width is less than or substantially equal to the maximum first width, and the maximum fifth width is substantially equal to the maximum first width.

According to some embodiments of the invention, the maximum fourth width is substantially Upper is equal to the maximum third width.

According to some embodiments of the present invention, the light emitting diode structure further includes an electrode layer disposed on the semiconductor stack.

According to some embodiments of the present invention, the electrode layer may be penetrated by light emitted by the light emitting layer.

According to some embodiments of the present invention, the electrode layer is a second metal layer.

According to some embodiments of the present invention, the base layer includes a dielectric material or a metal material.

According to some embodiments of the present invention, the base layer includes a distributed Bragg reflector (Distributed Bragg Reflector), and the insulating layer covers at least one side wall of the distributed Bragg reflector.

According to some embodiments of the present invention, when the base layer includes a decentralized Bragg reflector, the electrical contact layer may be penetrated by light emitted by the light emitting layer.

Another aspect of the present invention provides a light emitting diode structure that includes a semiconductor stack, an insulating layer, a first conductive pad, a second conductive pad, and a support region. The semiconductor stack includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer in order from top to bottom, wherein the second type semiconductor layer includes a first portion and a second portion, and the first portion is located on the second portion. The maximum width of the second part is greater than the maximum width of the first part. The insulating layer covers the side wall of the semiconductor stack and the upper surface of the second portion, and the insulating layer has a first opening and a second opening on the first type semiconductor layer and the second portion, respectively. The first conductive pad is electrically connected to the first type semiconductor through the first opening Floor. The second conductive pad is electrically connected to the second part through the second opening. The supporting area is located above the insulating layer and between the first conductive pad and the second conductive pad.

According to some embodiments of the present invention, the light-emitting diode structure further includes a solid crystal substrate electrically connected to the first conductive pad and the second conductive pad.

According to some embodiments of the present invention, the light emitting diode structure further includes a first adhesive layer and a second adhesive layer. The first adhesive layer is located between the first conductive pad and the solid crystal substrate, and the second adhesive layer is located between the second conductive pad and the solid crystal substrate, and the first adhesive layer and the second adhesive layer are electrically insulated.

According to some embodiments of the present invention, the light emitting diode structure further includes an electrode layer disposed between the first type semiconductor layer and the first conductive pad.

According to some embodiments of the present invention, the light-emitting diode structure further includes a conductive block disposed in the second opening, and the second conductive pad covers the top surface and the side wall of the conductive block.

According to some embodiments of the present invention, the top surface of the insulating layer on the first portion of the second type semiconductor layer is substantially flush with the top surface of the conductive block.

According to some embodiments of the present invention, the first conductive pad extends to cover a portion of the insulating layer.

According to some embodiments of the present invention, the top surface of the first conductive pad is substantially flush with the top surface of the second conductive pad.

According to some embodiments of the present invention, the second type semiconductor layer has There is a surface exposed outside, and the surface has a rough texture.

10, 20, 30 ‧‧‧ LED structure

40, 50, 60 ‧‧‧ precursor structure

110‧‧‧ Basement

120‧‧‧Electrical contact layer

122‧‧‧First metal layer

124‧‧‧ohm contact layer

130‧‧‧semiconductor stack

132‧‧‧Type 1 semiconductor layer

134‧‧‧luminous layer

136‧‧‧Type 2 semiconductor layer

136a‧‧‧Part I

136b‧‧‧Part II

140‧‧‧Insulation

140a‧‧‧First opening

140b‧‧‧Second opening

140t‧‧‧Top surface

150‧‧‧electrode layer

160‧‧‧adhesive layer

162‧‧‧The first adhesive layer

164‧‧‧Second adhesive layer

170‧‧‧Solid crystal substrate

180‧‧‧conductive block

180t‧‧‧Top surface

180s‧‧‧Side wall

192‧‧‧First conductive pad

192t‧‧‧Top surface

194‧‧‧Second conductive pad

194t‧‧‧Top surface

310‧‧‧Growth substrate

320‧‧‧ Epilayer

320’‧‧‧ semiconductor stack

320”‧‧‧ remaining semiconductor stack

326‧‧‧Second type semiconductor layer

326’‧‧‧ remaining second type semiconductor layer

326a‧‧‧Part I

326a’‧‧‧The remaining first part

326b‧‧‧Part II

326b’‧‧‧The remaining second part

326s‧‧‧surface

322‧‧‧Type 1 semiconductor layer

324‧‧‧luminous layer

328‧‧‧ undoped semiconductor layer

330‧‧‧ohm contact layer

330’‧‧‧ remaining ohmic contact layer

330’a‧‧‧ exposed part

332‧‧‧Metal layer

332’‧‧‧ remaining metal layer

332’a‧‧‧ exposed part

340a, 340b ‧‧‧ base layer

340a’, 340b’‧‧‧ remaining base layer

350‧‧‧Sacrifice

350R‧‧‧Opening

350a‧‧‧Part of the top surface of the sacrificial layer

350P‧‧‧Exposed part

352‧‧‧ opening

360‧‧‧Bearing substrate

370‧‧‧electrode layer

370’‧‧‧ remaining electrode layer

380‧‧‧Insulation

380a‧‧‧Part 1

380b‧‧‧Part II

380t‧‧‧Top surface

380R1‧‧‧First opening

380R2‧‧‧Second opening

382‧‧‧Support frame

382P‧‧‧turning position

390‧‧‧Conducting block

390t‧‧‧Top surface

390s‧‧‧Side wall

410‧‧‧support layer

412‧‧‧Support frame

420‧‧‧ adhesive layer

432‧‧‧The first conductive pad

434‧‧‧Second conductive pad

SP‧‧‧Support area

Line segment A-A’, B-B’‧‧‧

W1, W2, W3, W4, W5 ‧‧‧ maximum width

In order to make the above and other objects, features, advantages and examples of the present invention more obvious and understandable, the drawings are described in detail as follows: FIGS. 1A and 1B illustrate light emitting diodes according to various embodiments of the present invention A schematic cross-sectional view of the structure.

FIG. 2 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the invention.

FIG. 3 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the invention.

4 to 11B are schematic cross-sectional views at various stages of manufacturing a light-emitting diode structure according to an embodiment of the present invention.

FIG. 12 is a top view of a light-emitting diode structure according to an embodiment of the invention at one of the manufacturing stages.

13 to 15 are schematic cross-sectional views of the light-emitting diode structure according to the line segment A-A' of FIG. 12 in multiple manufacturing stages.

16A and 16B are schematic cross-sectional views of the light-emitting diode structure according to the line segment B-B' of FIG. 12 in one of the manufacturing stages.

17 to 25 are schematic cross-sectional views at various stages of manufacturing a light-emitting diode structure according to another embodiment of the present invention.

26 to 34 are schematic cross-sectional views at various stages of manufacturing a light-emitting diode structure according to another embodiment of the present invention.

FIG. 35 shows a light emitting diode junction according to another embodiment of the invention Constructed in a top view of one of the manufacturing stages.

FIGS. 36 to 38A are schematic cross-sectional views of the light-emitting diode structure according to the line segment A-A' of FIG. 35 in multiple manufacturing stages.

FIG. 38B is a schematic cross-sectional view of the light-emitting diode structure according to the line B-B' of FIG. 35 in one of the manufacturing stages.

39 to 50 are schematic cross-sectional views at various stages of manufacturing a light-emitting diode structure according to yet another embodiment of the present invention.

In order to make the description of this disclosure more detailed and complete, the following provides an illustrative description of the implementation form and specific embodiments of the present invention; however, this is not the only form for implementing or using specific embodiments of the present invention. The embodiments disclosed below can be combined or replaced with each other under beneficial circumstances, and other embodiments can be added to an embodiment without further description or description.

In the following description, many specific details will be described in detail to enable the reader to fully understand the following embodiments. However, embodiments of the invention may be practiced without these specific details. In other cases, to simplify the drawings, well-known structures and devices are only schematically shown in the drawings.

1A and 1B are schematic cross-sectional views of a light emitting diode structure 10 according to various embodiments of the present invention. Please refer to Figure 1A and Figure 1B first. The light emitting diode structure 10 of the present invention includes a base layer 110, an electrical contact layer 120, a semiconductor stack 130, and an insulating layer 140.

As shown in FIGS. 1A and 1B, specifically, the base layer 110 has a maximum first width W1. In detail, in actual operation, the base layer 110 may have a trapezoidal profile. In various embodiments, the base layer 110 may include a dielectric material or a metal material. For example, the dielectric material includes silicon dioxide (Silicon Dioxide, SiO ₂ ), silicon nitride (Silicon Nitride, Si ₃ N ₄ ), titanium dioxide (TiO ₂ ), tantalum pentoxide (Ta ₂ O ₅ ), or the above Any combination; metal materials include gold, aluminum, copper, nickel, etc.

As shown in FIGS. 1A and 1B, the electrical contact layer 120 has a maximum second width W2 and is disposed on the base layer 110. In detail, in actual operation, the electrical contact layer 120 may have a trapezoidal profile. It is worth noting that the maximum second width W2 is less than or equal to the maximum first width W1. The semiconductor stack 130 has a maximum third width W3 and is disposed on the electrical contact layer 120. In practical operation, the semiconductor stack 130 may have a trapezoidal profile. In more detail, the semiconductor stack 130 includes a first-type semiconductor layer 132, a light-emitting layer 134, and a second-type semiconductor layer 136 that are sequentially stacked on the electrical contact layer 120. In actual operation, the first-type semiconductor layer 132, the light-emitting layer 134, and the second-type semiconductor layer 136 may each have a trapezoidal profile. It can be understood that the widths of the first-type semiconductor layer 132, the light-emitting layer 134, and the second-type semiconductor layer 136 are substantially equal to or less than the maximum third width W3. It is worth noting that the maximum second width W2 is greater than the maximum third width W3.

In various embodiments, the first-type semiconductor layer 132 may be a P-type III-V group semiconductor layer. For example, the III-V semiconductor layer may include, for example, gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium arsenide (InAs), aluminum nitride (AlN), nitride Binary epitaxial materials such as indium (InN), indium phosphide (InP), or such as gallium arsenide phosphide (GaAsP), aluminum gallium arsenide (AlGaAs), Indium Gallium Phosphide (InGaP), Indium Gallium Nitride (InGaN), Indium Aluminum Gallium Phosphide (AlInGaP), Indium Gallium Phosphide Arsenide (InGaAsP) and other ternary or quaternary epitaxial materials. Therefore, the P-type group III-V semiconductor layer may be formed by doping the group III-V semiconductor layer with a group IIA element (such as beryllium, magnesium, calcium, or strontium).

In various embodiments, the light-emitting layer 134 may include multiple quantum wells (MQW), single-quantum wells (SQW), homojunctions, heterojunctions, or other heterojunctions. Similar structure.

In various embodiments, the second-type semiconductor layer 136 may be an N-type group III-V semiconductor layer. For example, the III-V semiconductor layer may include binary epitaxial materials such as gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium arsenide (InAs), or such as phosphorous Gallium arsenide (GaAsP), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), indium gallium nitride (InGaN), aluminum indium gallium phosphide (AlInGaP), indium gallium arsenide (InGaAsP), etc. Yuan or quaternary epitaxial material. Therefore, the N-type group III-V semiconductor layer may be formed by doping the above group III-V semiconductor layer with a group IVA element (such as silicon).

As shown in FIGS. 1A and 1B, in this embodiment, the electrical contact layer 120 includes an ohmic contact layer 124 and a first metal layer 122. The ohmic contact layer 124 has a maximum fourth width W4 and is disposed between the semiconductor stack 130 and the base layer 110, and the first metal layer 122 has a maximum fifth width W5 and is disposed between the ohmic contact layer 124 and the base layer 110. In more detail, in actual operation, the ohmic contact layer 124 and the first metal layer 122 can Each has a trapezoidal profile. It should be noted that the maximum fourth width W4 is less than or substantially equal to the maximum first width W1, and the maximum fifth width W5 is substantially equal to the maximum first width W1. In some embodiments, the ohmic contact layer 124 may include a light-transmitting conductive material or an opaque conductive material. For example, the light-transmitting conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or a material having a light-transmitting conductive effect; and the light-transmitting conductive material may Including nickel (Ni), silver (Ag), nickel-gold (Ni/Au) alloy or a combination of the above. In some embodiments, the first metal layer 122 includes titanium (Ti), nickel (Ni), aluminum (Al), gold (Au), platinum (Pt), chromium (Cr), silver (Ag), copper (Cu) ) Or its alloys. It should be noted that when the ohmic contact layer 124 includes a light-transmitting conductive material, the first metal layer 122 can reflect the light penetrated by the ohmic contact layer 124 back, so that the light is guided to emit upward, thereby increasing the light extraction efficiency.

In some embodiments, the electrical contact layer 120 is a single layer. Specifically, the single-layer electrical contact layer 120 may include a light-transmitting conductive material or an opaque conductive material. For example, the light-transmitting conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or a material having a light-transmitting conductive effect; and the light-transmitting conductive material may Including nickel (Ni), silver (Ag), nickel-gold (Ni/Au) alloy or a combination of the above. In addition, both the multi-layer and the single-layer electrical contact layer 120 have good conductivity, so the surface resistance of the first type semiconductor layer 132 can be reduced, thereby reducing the driving voltage of the light emitting diode structure 10 and reducing The difficulty of the electrical contact layer 120 in the manufacturing process.

Please continue to refer to FIGS. 1A and 1B, the insulating layer 140 is at least Covering a sidewall of the base layer 110, a sidewall of the electrical contact layer 120, and a sidewall of the semiconductor stack 130. In various embodiments, the material used for the insulating layer 140 may be silicon oxide, silicon nitride, silicon oxynitride, epoxy, or other suitable insulating materials.

As shown in FIGS. 1A and 1B, in one embodiment, the light emitting diode structure 10 may further include an electrode layer 150 disposed on the semiconductor stack 130, and a portion of the electrode layer 150 is exposed outside the insulating layer 140. In one embodiment, the insulating layer 140 covers at least one side wall of the electrode layer 150. In some embodiments, the insulating layer 140 may cover a side wall of the electrode layer 150 and a portion of the top surface of the electrode layer 150. In addition, in other embodiments, the insulating layer 140 covers only a part of the upper surface of the semiconductor stack 130, thus forming an opening. The opening of the insulating layer 140 exposes the remaining upper surface of the semiconductor stack 130. The electrode layer 150 may be disposed in the opening of the insulating layer 140 and contact the semiconductor stack 130. Alternatively, the electrode layer 150 may also cover a part of the top surface of the insulating layer 140. The portion of the electrode layer 150 exposed outside the insulating layer 140 serves as a stage for electrical contact.

In one embodiment, the electrode layer 150 can be penetrated by the light emitted by the light emitting layer 134. Therefore, it can be understood that the electrode layer 150 includes a light-transmitting conductive material. For example, the light-transmitting conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum zinc oxide (AZO). Or materials with light-transmitting and conductive effects. In addition, since the light-transmitting conductive material has good conductivity, the surface resistance of the second-type semiconductor layer 136 can be reduced, thereby reducing the driving voltage of the light emitting diode structure 10, and reducing the electrode layer 150 in the manufacturing process Difficulty. The electrode layer 150 contains In the embodiment of the light-transmitting conductive material, the width of the electrode layer 150 is generally equal to the maximum third width W3 of the semiconductor stack 130 to make the manufacturing process easier.

In another embodiment, the electrode layer 150 may further include an opaque metal material. For example, the opaque metal material includes chromium (Cr), germanium gold (GeAu), gold (Au), and titanium (Ti ), aluminum (Al) or similar opaque metal materials. In the embodiment in which the electrode layer 150 includes an opaque metal material, in order not to affect the light extraction efficiency of the light emitting diode, the width of the electrode layer 150 is generally smaller than the maximum third width W3 of the semiconductor stack 130. For example, the width of the electrode layer 150 only needs to provide a sufficient bonding area for the external wires.

As shown in FIGS. 1A and 1B, in one embodiment, the light emitting diode structure 10 may further include a solid crystal substrate 170. Specifically, the base layer 110, the electrical contact layer 120, the semiconductor stack 130, and the insulating layer 140 are all disposed on the solid crystal substrate 170. In some embodiments of the present invention, the solid crystal substrate 170 may be a rigid printed circuit board, a high thermal conductivity aluminum substrate, a glass substrate, a ceramic substrate, a flexible printed circuit board, a metal composite material board, a light emitting substrate, or a substrate such as a transistor Or a semiconductor substrate of functional elements of integrated circuits (ICs). In one embodiment, the light emitting diode structure 10 may further include an adhesive layer 160 sandwiched between the solid crystal substrate 170 and the base layer 110 to improve the bonding force between the light emitting diode structure 10 and the solid crystal substrate 170 . In some embodiments of the present invention, the material of the adhesive layer 160 may include insulating glue, conductive glue, and/or metal. For example, the material of the adhesive layer 160 may be an insulating adhesive, such as epoxy resin or silicone; the material of the adhesive layer 160 may be a conductive adhesive, such as Epoxy resin mixed with silver powder; the material of the adhesive layer 160 may be metal, such as copper, aluminum, tin, gold, indium, and/or silver, but not limited thereto.

In the following, various examples of FIG. 1A and FIG. 1B will be introduced in order, and the differences between the various embodiments will be mainly described, and the repeated parts will not be repeated. Please refer to FIG. 1A first. In this embodiment, the electrical contact layer 120 of the light emitting diode structure 10 includes an ohmic contact layer 124 and a first metal layer 122, and the first metal layer 122 is sandwiched between the ohmic contact layer 124 With the base layer 110. The first-type semiconductor layer 132 and the second-type semiconductor layer 136 in the semiconductor stack 130 are P-type and N-type group III-V semiconductor layers (for example, containing GaN). The electrode layer 150 on the semiconductor stack 130 includes a light-transmitting conductive material (for example, ITO). In this embodiment, the maximum first width W1 of the base layer 110 is substantially equal to the maximum second width W2 of the electrical contact layer 120, wherein the maximum fourth width W4 of the ohmic contact layer 124 is substantially equal to the first metal layer 122 The maximum fifth width W5, and the maximum second width W2 of the electrical contact layer 120 are greater than the maximum third width W3 of the semiconductor stack 130.

Please refer to Figure 1B. The difference between the light-emitting diode structure 10 shown in FIG. 1B and the light-emitting diode structure 10 shown in FIG. 1A is that the maximum first width W1 of the base layer 110 is substantially equal to the first metal layer 122 The maximum fifth width W5, the maximum third width W3 of the semiconductor stack 130 is substantially equal to the maximum fourth width W4 of the ohmic contact layer 124, and the maximum fifth width W5 of the first metal layer 122 is greater than the maximum of the semiconductor stack 130 The third width W3.

FIG. 2 illustrates a second light emitting device according to another embodiment of the present invention A schematic cross-sectional view of the polar body structure. In order to facilitate the comparison with the differences between the above embodiments and simplify the description, the same symbols are used in the following examples to mark the same elements, and the differences between the embodiments are mainly described, and no emphasis will be given. Repeat the details.

The difference between the light-emitting diode structure 20 shown in FIG. 2 and the light-emitting diode structure 10 shown in FIG. 1A is that the base layer 110 of the light-emitting diode structure 20 includes a distributed Bragg reflector (Distributed Bragg Reflector, DBR). The electrical contact layer 120 is a single layer containing a light-transmitting conductive material. For example, the light-transmitting conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or Light-transmitting conductive material. Since the light-transmitting conductive material has good conductivity, it can reduce the surface resistance of the first type semiconductor layer 132, thereby reducing the driving voltage of the light emitting diode structure 20, and can reduce the difficulty of the electrical contact layer 120 in the manufacturing process degree. The electrical contact layer 120 has a maximum second width W2. Specifically, the decentralized Bragg reflector can be formed by stacking two thin films of homogeneous or heterogeneous materials with different refractive indexes, and can reflect the light emitted by the light emitting layer 134 in the semiconductor stack 130 and face away from the solid crystal The light is emitted in the direction of the substrate 170 to improve the light emitting efficiency of the light emitting diode structure 20. It is worth noting that the maximum second width W2 is greater than the maximum third width W3.

FIG. 3 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the invention. In order to facilitate the comparison with the differences between the above-mentioned embodiments and simplify the description, the same symbols are used in the following examples to mark the same elements, and mainly for the differences between the embodiments Explanation, without repeating the repeated part.

As shown in FIG. 3, the light emitting diode structure 30 includes a semiconductor stack 130, an insulating layer 140, a first conductive pad 192, a second conductive pad 194, and a support region SP. Specifically, the semiconductor stack 130 includes a first type semiconductor layer 132, a light emitting layer 134, and a second type semiconductor layer 136 in order from top to bottom, wherein the second type semiconductor layer 136 includes a first portion 136a and a second portion 136b, And the first part 136a is located on the second part 136b. In an embodiment, the width of the first type semiconductor layer 132, the width of the light emitting layer 134, and the width of the first portion 136a of the second type semiconductor layer 136 may be substantially the same. It should be noted that the width of the second portion 136b of the second type semiconductor layer 136 is greater than the width of the first portion 136a thereof, in other words, the second type semiconductor layer 136 has a stepped cross-sectional profile. The insulating layer 140 covers the sidewall of the semiconductor stack 130 and the upper surface of the second portion 136b. It is worth noting that the insulating layer 140 has a first opening 140a and a second opening 140b located on the second portion 136b of the first type semiconductor layer 132 and the second type semiconductor layer 136, respectively. The first conductive pad 192 is electrically connected to the first type semiconductor layer 132 through the first opening 140a, and the second conductive pad 194 is electrically connected to the second portion 136b of the second type semiconductor layer 136 through the second opening 140b. In some embodiments, the first conductive pad 192 extends to cover a portion of the top surface 140t of the insulating layer 140. In one embodiment, the top surface 192t of the first conductive pad 192 and the top surface 194t of the second conductive pad 194 are substantially flush. The support area SP is located above the insulating layer 140 and between the first conductive pad 192 and the second conductive pad 194.

Please continue to refer to Figure 3, in one embodiment, the light-emitting diode The body structure 30 further includes an electrode layer 150 disposed between the first type semiconductor layer 132 and the first conductive pad 192. In one embodiment, the light emitting diode structure 30 further includes a solid crystal substrate 170. The first conductive pad 192 and the second conductive pad 194 of the light emitting diode structure 30 are electrically connected to the solid crystal substrate 170. In other words, the first conductive pad 192 and the second conductive pad 194 of the light emitting diode structure 30 are electrically connected to the solid crystal substrate 170 by flip-chip. In some embodiments, the light emitting diode structure 30 may further include a first adhesive layer 162 and a second adhesive layer 164. In detail, the first adhesive layer 162 is located between the first conductive pad 192 and the solid crystal substrate 170, and the second adhesive layer 164 is located between the second conductive pad 194 and the solid crystal substrate 170. It is worth noting that the first adhesive layer 162 and the second adhesive layer 164 are electrically insulated to avoid the problem of a short circuit between the first conductive pad 192 and the second conductive pad 194. In many examples, both the first adhesive layer 162 and the second adhesive layer 164 are transparent conductive adhesive layers. For example, the transparent conductive adhesive layer includes silver powder mixed epoxy resin or anisotropic conductive adhesive Film, ACF).

Please continue to refer to FIG. 3. In some embodiments, the light emitting diode structure 30 further includes a conductive block 180 disposed in the second opening 140b, and the second conductive pad 194 covers the top surface 180t of the conductive block 180 and The side wall is 180s. In one embodiment, the top surface 140t of the insulating layer 140 on the electrode layer 150 is substantially flush with the top surface 180t of the conductive block 180.

Another aspect of the present invention is to provide a method for manufacturing the light emitting diode structure 10. 4 to 16B are schematic cross-sectional views at various stages of manufacturing the light-emitting diode structure 10 according to an embodiment of the present invention.

As shown in FIG. 4, first, a precursor structure 40 is provided. The precursor structure 40 includes an electrode layer 370, a semiconductor stack 320', an ohmic contact layer 330, a metal layer 332, a base layer 340a, a sacrificial layer 350, and a carrier substrate 360 in order from top to bottom.

5 to 9 are schematic cross-sectional views of an embodiment of the present invention used to complete the aforementioned precursor structure at various manufacturing stages. Please refer to FIG. 5 first to form an epitaxial stack 320 on the growth substrate 310. In one embodiment, the epitaxial stack 320 may be formed on the growth substrate 310 by epitaxial growth technology. In an embodiment, the growth substrate 310 may be a sapphire substrate or other suitable substrates. In various embodiments, the epitaxial stack 320 includes an undoped semiconductor layer 328, a second type semiconductor layer 326, a light emitting layer 324, and a first type semiconductor layer 322 sequentially stacked on the growth substrate 310. In some embodiments, the undoped semiconductor layer 328 is an undoped III-V semiconductor layer. For example, the undoped III-V semiconductor layer may include gallium arsenide (GaAs), gallium nitride (GaN), gallium phosphide (GaP), indium arsenide (InAs), aluminum nitride (AlN) , Indium nitride (InN), indium phosphide (InP) and other binary epitaxial materials, or such as gallium arsenide phosphide (GaAsP), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), indium nitride Ternary or quaternary epitaxial materials such as gallium (InGaN), aluminum indium phosphorous gallium (AlInGaP), indium gallium phosphorous arsenide (InGaAsP), etc. In some embodiments, the second type semiconductor layer 326 is an N-type group III-V semiconductor layer, and the first type semiconductor layer 322 is a P-type group III-V semiconductor layer. It can be understood that the N-type group III-V semiconductor layer may be formed by doping the undoped group III-V semiconductor layer with an IVA element (such as silicon, etc.), and the P-type group III-V semiconductor layer may be It is the undoped III-V semiconductor layer through the group IIA element (such as beryllium, magnesium, Calcium or strontium are formed after doping. In various embodiments, the light-emitting layer 324 may include multiple quantum wells (MQW), single-quantum wells (SQW), homojunctions, heterojunctions, or other heterojunctions. Similar structure.

Please continue to refer to FIG. 5, the ohmic contact layer 330, the metal layer 332 and the base layer 340 a are sequentially formed on the epitaxial stack 320 from bottom to top. In this embodiment, the ohmic contact layer 330 may include a light-transmitting conductive material or an opaque conductive material. For example, the light-transmitting conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or a material having a light-transmitting conductive effect; and the light-transmitting conductive material may Including nickel (Ni), silver (Ag), nickel-gold (Ni/Au) alloy or a combination of the above. The material of the metal layer 332 is as described above in the first metal layer 122, and will not be repeated here. In this embodiment, the base layer 340a may include a dielectric material or a metal material. For example, the dielectric material includes silicon dioxide (Silicon Dioxide, SiO ₂ ), silicon nitride (Silicon Nitride, Si ₃ N ₄ ), titanium dioxide (TiO ₂ ), tantalum pentoxide (Ta ₂ O ₅ ), or the above Any combination; and the metal materials include gold, aluminum, copper, nickel, etc.

Referring to FIG. 6, a sacrificial layer 350 is formed on the base layer 340a. In various embodiments, the sacrificial layer 350 includes Benzocyclobutene (BCB) or polyimide (PI).

Then, referring to FIG. 7, a carrier substrate 360 is formed on the sacrificial layer 350. In various embodiments, the carrier substrate 360 may be a silicon substrate or other suitable substrates. It should be noted that a carrier substrate is formed on the sacrificial layer 350 After 360, the structure as shown in FIG. 7 is turned so that the growth substrate 310 is at the top and the carrier substrate 360 is at the bottom.

Please refer to FIG. 8 to remove the growth substrate 310. In some embodiments, the growth substrate 310 may be removed by laser lift-off (LLO), grinding, or etching. Specifically, the growth substrate 310 is removed to expose the undoped semiconductor layer 328 of the epitaxial stack 320.

Please refer to FIG. 9, and then, a part of the epitaxial stack 320 is removed to form a semiconductor stack 320'. In more detail, since the undoped semiconductor layer 328 in the epitaxial stack 320 does not have a conductive function, in this step, the undoped semiconductor layer 328 in the epitaxial stack 320 is completely removed, and The second type semiconductor layer 326 is exposed. After this step, the semiconductor stack 320' (that is, the remaining epitaxial stack) includes the second type semiconductor layer 326, the light emitting layer 324, and the first type semiconductor layer 322 sequentially stacked on the ohmic contact layer 330 from top to bottom on.

Then, an electrode layer 370 is formed on the semiconductor stack 320' to complete the precursor structure 40 as shown in FIG. In one embodiment, the electrode layer 370 includes a light-transmitting conductive material. For example, the light-transmitting conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or Light-transmitting conductive material. In addition, since the light-transmitting conductive material has good conductivity, it can reduce the surface resistance of the second type semiconductor layer 326, thereby reducing the driving voltage of the light emitting diode, and can reduce the difficulty of the electrode layer 370 in the manufacturing process . In another embodiment, the electrode layer 370 may further include an opaque metal material, for example, opaque Light metallic materials include chromium (Cr), germanium gold (GeAu), gold (Au), titanium (Ti), aluminum (Al), or similar opaque metal materials.

Next, part of the electrode layer 370, part of the semiconductor stack 320', part of the ohmic contact layer 330, part of the metal layer 332, and part of the base layer 340a of the precursor structure 40 are removed to expose the sacrificial layer 350. 10A to 11B are schematic cross-sectional views of an embodiment of the present invention for implementing this step. In this step, two removal processes are included. As shown in FIG. 10A, in one embodiment, the first removal process may utilize a lithography etching process to remove part of the electrode layer 370 and part of the semiconductor stack 320', and expose the ohmic contact layer 330. In this embodiment, the remaining semiconductor stack 320" has substantially the same width as the remaining electrode layer 370'. As shown in FIG. 10B, in another embodiment, the first removal process may utilize micro Shadow etching process to remove part of the electrode layer 370, part of the semiconductor stack 320' and part of the ohmic contact layer 330, and expose the metal layer 332. In this embodiment, the remaining semiconductor stack 320", the remaining The electrode layer 370' and the remaining ohmic contact layer 330' have substantially the same width. It should be noted that in the embodiment where the electrode layer 370 includes a light-transmitting conductive material, the width of the semiconductor stack 320" remaining after etching is substantially equal to the width of the remaining electrode layer 370'. The electrode layer 370 includes an opaque In the embodiment of the metal material, in order not to affect the light emitting efficiency of the light emitting diode, the width of the remaining electrode layer 370' after etching is generally smaller than the width of the remaining semiconductor stack 320". For example, the remaining electrode layer 370 The width of the'as long as it can provide enough bonding area for external wires.

As shown in FIG. 11A, in one embodiment, the second shift The removal process may utilize a lithography etching process to remove part of the ohmic contact layer 330, part of the metal layer 332, and part of the base layer 340a, and expose the sacrificial layer 350. In this embodiment, the remaining ohmic contact layer 330', the remaining metal layer 332', and the remaining base layer 340a' have substantially the same width, and the width of the remaining ohmic contact layer 330' is greater than the remaining semiconductor stack 320” width. As shown in FIG. 11B, in another embodiment, the second removal process may use a lithography etching process to remove part of the metal layer 332 and part of the base layer 340a, and expose the sacrifice Layer 350. In this embodiment, the remaining metal layer 332' and the remaining base layer 340b' have substantially the same width, and the width of the remaining metal layer 332' is greater than the width of the remaining semiconductor stack 320".

FIG. 12 shows a top view of the light emitting diode structure at one of the manufacturing stages. 13 to 15 are schematic cross-sectional views of the light-emitting diode structure according to the line segment A-A' of FIG. 12 in multiple manufacturing stages. 16A to 16B are schematic cross-sectional views of the light-emitting diode structure according to the line segment B-B' of FIG. 12 in one of the manufacturing stages. It should be noted that, due to the cross-sectional viewing angle relationship, in FIGS. 13 to 15, the remaining base layer 340a′, the remaining metal layer 332′, the remaining ohmic contact layer 330′, and the remaining semiconductor stack 320” It has the same width as the remaining electrode layer 370'.

Please refer to FIG. 13 and FIG. 14 at the same time. An opening 352 is formed in the sacrificial layer 350 to expose a part of the carrier substrate 360. Specifically, the opening 352 is adjacent to the remaining multilayer structure (including 340a', 332', 330', 320", and 370') after the above etching. It should be noted that the opening 352 is not in the light-emitting diode structure a part of.

Next, referring to FIG. 14, an insulating layer 380 is formed to continuously cover the remaining base layer 340 a ′, the remaining metal layer 332 ′, the remaining ohmic contact layer 330 ′, the remaining semiconductor stack 320 ″, and the remaining electrode layer 370 ', a portion 350a of the top surface of one of the sacrificial layers 350, the opening 352, and the exposed portion of the carrier substrate 360. Specifically, the insulating layer 380 has a first portion 380a covering the portion 350a of the top surface of the sacrificial layer 350 and is insulated Layer 380 has a second portion 380b coupled to its first portion 380a and covers the sidewalls of the remaining multilayer structure (including 340a', 332', 330', 320", and 370'). The first portion 380a and the second portion 380b of the insulating layer 380 are formed like an "L" shape. The portion of the sacrificial layer 350 that is not covered by the insulating layer 380 (ie, the exposed portion 350P) and the portion 350a of the top surface of the sacrificial layer 350 that is covered by the first portion 380a of the insulating layer 380 are respectively located in the remaining multilayer structure (including 340a' , 332', 330', 320" and 370') on opposite sides. In some embodiments of the present invention, the material of the insulating layer 380 is as described above for the insulating layer 140, which is not repeated here. In the present invention In some embodiments, the insulating layer 380 may be formed by chemical vapor deposition, printing, coating, or other suitable methods. Specifically, the insulating layer 380 has a thickness of 500 Å to 20,000 Å. According to various embodiments When the thickness of the insulating layer 380 is greater than a certain value, such as 20,000 Å, it will cause an increase in manufacturing costs. Conversely, when the thickness of the insulating layer 380 is less than a certain value, such as 500 Å, it will cause insufficient support provided in the manufacturing process. Therefore, the thickness of the insulating layer 380 may be, for example, 600Å, 700Å, 800Å, 900Å, 1000Å, 2000Å, 3000Å, 4000Å, 5000Å, 6000Å, 7000Å, 8000Å, 9000Å, 10000Å, or 15000Å.

Please refer to FIG. 15, FIG. 16A and FIG. 16B at the same time to remove the sacrificial layer 350. In detail, the sacrificial layer 350 may be removed from the exposed portion 350P of the sacrificial layer using an etching solution. As shown in FIG. 15, after the sacrificial layer 350 is etched, a portion of the insulating layer 380 will form a support frame 382, and the support frame 382 may be used to replace the remaining electrode layer 370', the remaining semiconductor stack 320", and the remaining The ohmic contact layer 330', the remaining metal layer 332', and the remaining base layer 340a' are suspended above the carrier substrate 360. After the sacrificial layer 350 is removed, only the support frame 382 supports the upper structure, so it can be easily Ground to break the support frame 382. In addition, in some embodiments, only a portion of the sacrificial layer 350 is removed. For example, a portion of the sacrificial layer 350 is removed from the upper surface of the sacrificial layer 350 so that the remaining electrode layer 370', the remaining semiconductor stack 320", the remaining ohmic contact layer 330', the remaining metal layer 332', and the remaining base layer 340a' are suspended above the carrier substrate 360. In other words, it is not necessary to completely remove the animal layer 350, as long as the support frame 382 can be broken. In FIGS. 16A and 16B, the insulating layer 380 continuously covers at least one side wall of the remaining base layer 340a′, one side wall of the remaining metal layer 332′, one side wall of the remaining ohmic contact layer 330′, and the remaining semiconductor stack 320 One of the sidewalls and one of the sidewalls of the remaining electrode layer 370', and exposes a portion 330'a of the top surface of the remaining ohmic contact layer 330' or a portion 332'a of the top surface of the remaining metal layer 332'. In some embodiments The insulating layer 380 may also cover a part of the top surface of the remaining electrode layer 370'.

Returning to FIG. 15, the support frame 382 of the insulating layer 380 is broken to form a single light-emitting diode structure. It should be noted that after the step of breaking the support frame 382, it will be formed on a separate light emitting diode structure Into a support area SP. In more detail, the support area SP may include the support frame 382 breaking at the turning position 382P of the first part 380a and the second part 380b, or the support frame 382 breaking at any place of the first part 380a, or the second part The portion 380b is detached from the sidewall of the remaining multilayer structure (340a', 332', 330', 320", or 370'). In some embodiments, this separate light emitting diode structure may be disposed on the solid crystal substrate 170 to form As shown in FIGS. 1A and 1B, the light emitting diode structure 10. In addition, an adhesive layer 160 may be further formed on the solid crystal substrate 170, and then the separate light emitting diode may be disposed on the adhesive layer 160 to Increase the adhesion between the two. The various features of the light-emitting diode structure 10 shown in Figures 1A and 1B have been described above and are not repeated here. It is worth noting that the above process operations are only examples It is shown that each operation can be arbitrarily exchanged in accordance with requirements. In some embodiments, additional operations can be performed before, during, or after the above process.

Another embodiment of the present invention is to provide a method for manufacturing the light emitting diode structure 10. 17 to 25 are schematic cross-sectional views at various stages of manufacturing the light-emitting diode structure 10 according to an embodiment of the present invention. As shown in FIG. 17, first, a precursor structure 50 is provided. The precursor structure 50 includes an electrode layer 370, a semiconductor stack 320', an ohmic contact layer 330, a base layer 340a, a sacrificial layer 350, a support layer 410, and a carrier substrate 360 in order from top to bottom. In one embodiment, the precursor structure 50 may further include a metal layer 332 sandwiched between the ohmic contact layer 330 and the base layer 340a. In another embodiment, the precursor structure 50 may further include an adhesive layer 420 between the support layer 410 and the carrier substrate 360. The following are all precursor structures 50 including a metal layer The embodiment of 332 and the adhesive layer 420 are described.

18 to 22 are schematic cross-sectional views of an embodiment of the present invention used to complete the aforementioned precursor structures at various manufacturing stages. Referring to FIG. 18 first, an epitaxial stack 320, an ohmic contact layer 330, a metal layer 332, a base layer 340a, and a sacrificial layer 350 are sequentially formed on the growth substrate 310 from bottom to top. More specifically, the epitaxial stack 320 includes an undoped semiconductor layer 328, a second-type semiconductor layer 326, a light-emitting layer 324, and a first-type semiconductor layer 322 sequentially stacked on the growth substrate 310. It should be noted that the sacrificial layer 350 has an opening 350R exposing a portion of the base layer 340a.

Next, as shown in FIG. 19, a support layer 410 is formed to cover the sacrificial layer 350 and fill the opening 350R. In some embodiments, the supporting layer 410 may include an insulating material, a metal material, or other materials having a supporting effect. For example, the insulating material includes silicon oxide, silicon nitride, silicon oxynitride, and epoxy resin; and the metal material includes aluminum, titanium, platinum, or nickel, but not limited thereto.

Please refer to FIG. 20 to continue forming the carrier substrate 360 on the support layer 410. In some embodiments, the carrier substrate 360 can be adhered to the support layer 410 through the adhesive layer 420 to improve the bonding force between the carrier substrate 360 and the support layer 410. In an embodiment, the material of the adhesive layer 420 may include insulating glue, conductive glue, and/or metal. For example, the material of the adhesive layer 420 may be an insulating adhesive, such as epoxy resin or silicone; the material of the adhesive layer 420 may be a conductive adhesive, such as an epoxy resin mixed with silver powder; and the material of the adhesive layer 420 may be a metal, such as copper , Aluminum, tin, gold, indium and/or silver, but not limited to this. It should be noted here that after the carrier substrate 360 is formed, it will be as shown in FIG. 20 The illustrated structure is turned so that the growth substrate 310 is at the top and the carrier substrate 360 is at the bottom.

Then, referring to FIG. 21, the growth substrate 310 is removed. In some embodiments, the growth substrate 310 may be removed by laser lift-off (LLO), grinding, or etching. Specifically, the growth substrate 310 is removed to expose the undoped semiconductor layer 328 of the epitaxial stack 320.

Please refer to FIG. 22, and then, a part of the epitaxial stack 320 is removed to form a semiconductor stack 320'. In more detail, since the undoped semiconductor layer 328 in the epitaxial stack 320 does not have a conductive function, in this step, the undoped semiconductor layer 328 in the epitaxial stack 320 is completely removed, and The second type semiconductor layer 326 is exposed. After this step, the semiconductor stack 320' (that is, the remaining epitaxial stack) includes the second type semiconductor layer 326, the light emitting layer 324, and the first type semiconductor layer 322 sequentially stacked on the ohmic contact layer 330 from top to bottom on. Then, an electrode layer 370 is formed on the semiconductor stack 320' to complete the precursor structure 50 as shown in FIG.

Next, part of the electrode layer 370, part of the semiconductor stack 320', part of the ohmic contact layer 330, part of the metal layer 332, and part of the base layer 340a of the precursor structure 50 as shown in FIG. 17 are removed to expose the sacrifice Floor 350. 23 to 24 are schematic cross-sectional views of an embodiment of the present invention for achieving this step. In this step, two removal processes are included. As shown in FIG. 23, in one embodiment, the first removal process may use a lithography etching process to remove part of the electrode layer 370 and part of the semiconductor stack 320', and expose the ohmic contact layer 330. In this embodiment In this case, the remaining semiconductor stack 320" has substantially the same width as the remaining electrode layer 370'.

As shown in FIG. 24, in one embodiment, the second removal process may use a lithography etching process to remove part of the ohmic contact layer 330, part of the metal layer 332, and part of the base layer 340a, and expose The sacrifice layer 350. In this embodiment, the remaining ohmic contact layer 330', the remaining metal layer 332', and the remaining base layer 340a' have substantially the same width, and the width of the remaining ohmic contact layer 330' is greater than the remaining semiconductor stack 320” width. In actual operation, during the second removal process, due to process tolerances, one side wall of the remaining ohmic contact layer 330' is not completely the same as the corresponding remaining semiconductor stack 320" The side walls are flush.

Please continue to refer to FIG. 24, forming an insulating layer 380 to continuously cover the remaining base layer 340a', the remaining metal layer 332', the remaining ohmic contact layer 330', the remaining semiconductor stack 320", and the remaining electrode layer 370' It should be noted that the insulating layer 380 does not completely cover the sacrificial layer 350, that is, a portion of the sacrificial layer 350 is exposed. Then, in one embodiment, the insulating layer can be etched by lithography The first opening 380R1 and the second opening 380R2 are formed in 380 to expose a part of the remaining electrode layer 370' and a part of the remaining ohmic contact layer 330', respectively.

Referring to FIG. 25, the sacrificial layer 350 is removed. In detail, the sacrificial layer 350 may be removed from the exposed portion of the sacrificial layer 350 using an etching solution. After the sacrificial layer 350 is etched, a part of the support layer 410 will form a support frame 412, and the support frame 412 may be the insulating layer 380, the remaining electrode layer 370', the remaining semiconductor stack 320", the remaining ohmic contact layer 330', The remaining metal layer 332' and the remaining base layer 340a' are suspended above the support layer 410. Since only the support frame 412 supports the upper structure after the sacrificial layer 350 is removed, the support frame 412 can be easily broken. Furthermore, in some embodiments, only a portion of the sacrificial layer 350 is removed. For example, part of the sacrificial layer 350 is removed from the upper surface of the sacrificial layer 350, so that the insulating layer 380, the remaining electrode layer 370', the remaining semiconductor stack 320", the remaining ohmic contact layer 330', the remaining metal The layer 332' and the remaining base layer 340a' are suspended above the sacrificial layer 350. That is, it is not necessary to completely remove the layer 350, as long as the support frame 412 can be broken. In FIG. 25, the insulating layer 380 continuously covers at least one sidewall of the remaining base layer 340a', one sidewall of the remaining metal layer 332', one sidewall of the remaining ohmic contact layer 330', one sidewall of the remaining semiconductor stack 320", and one of the remaining electrode layers 370' The side walls expose a portion of the remaining electrode layer 370' and a portion of the remaining ohmic contact layer 330'. In some embodiments, the insulating layer 380 may also cover another part of the top surface of the remaining electrode layer 370'.

Please continue to refer to FIG. 25 to break the support frame 412 of the support layer 410 to form a single light-emitting diode structure. In an embodiment, after the support frame 412 breaks, a part of the support frame 412 may remain on the separate light-emitting diode structure, and a part of the remaining support frame 412 will not be cleaned again. In another embodiment, after the support frame 412 is broken, a part of the support frame 412 may not remain on the structure of the single light-emitting diode at all. In some embodiments, this separate light emitting diode structure may be disposed on the solid crystal substrate 170 to form the light emitting diode structure 10 shown in FIG. 1A. In addition, the solid crystal substrate 170 can be further An adhesive layer 160 is provided between the separate light-emitting diodes to increase the adhesion between the two. In more detail, the remaining portion of the support frame 412 on the separate light-emitting diode structure will be covered by the adhesive layer 160, therefore, the light-emitting diode structure 10 as shown in FIG. 1A will still be formed in appearance . Various features of the light-emitting diode structure 10 shown in FIG. 1A have been described above, and are not repeated here. It is worth noting that the above-mentioned process operations are only illustrative, and each operation can be arbitrarily exchanged in accordance with requirements. In some embodiments, additional operations may be performed before, during, or after the above process.

Another aspect of the present invention is to provide a method for manufacturing the light emitting diode structure 20. 26 to 38B are schematic cross-sectional views at various stages of manufacturing the light-emitting diode structure 20 according to another embodiment of the present invention.

As shown in FIG. 26, first, a precursor structure 60 is provided. The precursor structure 60 includes an electrode layer 370, a semiconductor stack 320', an ohmic contact layer 330, a base layer 340b, a sacrificial layer 350, and a carrier substrate 360 in order from top to bottom. FIG. 27 to FIG. 30 are schematic cross-sectional views of an embodiment of the present invention used to complete each stage of the aforementioned precursor structure. In order to facilitate the comparison with the differences between the above embodiments and simplify the description, the same symbols are used in the following examples to mark the same elements, and the differences between the embodiments are mainly described, and no emphasis will be given. Repeat the details. Referring to FIG. 27, an epitaxial stack 320 and an ohmic contact layer 330 are sequentially stacked up on the growth substrate 310.

Next, referring to FIG. 28, a base layer 340b is formed on the ohmic contact layer 330. In this embodiment, the base layer 340b includes a decentralized Distributed Bragg Reflector (DBR). The technical content of the decentralized Bragg reflector has been detailed above, and will not be repeated here. It should be noted that, in this embodiment, when the base layer 340b includes a distributed Bragg reflector, the ohmic contact layer 330 must only contain a light-transmitting conductive material, such as indium tin oxide (ITO), indium zinc oxide ( IZO), Alumina Zinc (AZO) or materials with light-transmitting and conductive effect.

Referring to FIG. 29, a sacrificial layer 350 is formed on the base layer 340b. In various embodiments, the sacrificial layer 350 includes Benzocyclobutene (BCB) or polyimide (PI).

Then, referring to FIG. 30, a carrier substrate 360 is formed on the sacrificial layer 350. In various embodiments, the carrier substrate 360 may be a silicon substrate or other suitable substrates. It should be noted that after the carrier substrate 360 is formed on the sacrificial layer 350, the structure as shown in FIG. 30 is turned so that the growth substrate 310 is at the top and the carrier substrate 360 is at the bottom.

Referring to FIG. 31, the growth substrate 310 is removed. In some embodiments, the growth substrate 310 may be removed by laser lift-off (LLO), grinding, or etching. Specifically, the growth substrate 310 is removed to expose the undoped semiconductor layer 328 of the epitaxial stack 320.

Please refer to FIG. 32, and then, a part of the epitaxial stack 320 is removed to form a semiconductor stack 320'. In more detail, since the undoped semiconductor layer 328 in the epitaxial stack 320 does not have a conductive function, in this step, the undoped semiconductor layer 328 in the epitaxial stack 320 is completely removed, and The second type semiconductor layer 326 is exposed. After this step, the semiconductor stack 320' (i.e., the remaining epitaxial stack) includes the second type semiconductor from top to bottom The bulk layer 326, the light emitting layer 324, and the first type semiconductor layer 322 are sequentially stacked on the ohmic contact layer 330.

Then, an electrode layer 370 is formed on the semiconductor stack 320' to complete the precursor structure 60 as shown in FIG. In one embodiment, the electrode layer 370 includes a light-transmitting conductive material. For example, the light-transmitting conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or Light-transmitting conductive material. In addition, since the light-transmitting conductive material has good conductivity, it can reduce the surface resistance of the second type semiconductor layer 326, thereby reducing the driving voltage of the light emitting diode, and can reduce the difficulty of the electrode layer 370 in the manufacturing process . In another embodiment, the electrode layer 370 may further include an opaque metal material. For example, the opaque metal material includes chromium (Cr), germanium gold (GeAu), gold (Au), and titanium (Ti ), aluminum (Al) or similar opaque metal materials.

Next, part of the electrode layer 370, part of the semiconductor stack 320', part of the ohmic contact layer 330, and part of the base layer 340b of the precursor structure 40 are removed to expose the sacrificial layer 350. Figure 33 to Figure 34 are schematic cross-sectional views of an embodiment of the present invention for achieving this step. In this step, two removal processes are included. Referring to FIG. 33, the first removal process may use a lithography etching process to remove part of the electrode layer 370 and part of the semiconductor stack 320', and expose the ohmic contact layer 330. In the embodiment where the electrode layer 370 includes a light-transmitting conductive material, the width of the remaining semiconductor stack 320" after etching is substantially equal to the width of the remaining electrode layer 370'. In the implementation in which the electrode layer 370 includes an opaque metal material In the method, in order not to affect the light emitting efficiency of the light emitting diode, the remaining electrode layer 370' after etching The width is generally smaller than the width of the remaining semiconductor stack 320". For example, the width of the remaining electrode layer 370' is sufficient as long as it can provide a sufficient bonding area for the external wires.

Please refer to FIG. 34. The second removal process may use a lithography etching process to remove part of the ohmic contact layer 330 and part of the base layer 340b, and expose the sacrificial layer 350. Specifically, the width of the remaining ohmic contact layer 330' is substantially equal to the width of the remaining base layer 340b', and the width of the remaining ohmic contact layer 330' is greater than the width of the remaining semiconductor stack 320".

FIG. 35 shows a top view of the light emitting diode structure 20 at one of the manufacturing stages. 36 to 38A are schematic cross-sectional views of the light-emitting diode structure 20 according to the line segment A-A' of FIG. 35 in multiple manufacturing stages. FIG. 38B is a schematic cross-sectional view of the light emitting diode structure 20 according to the line segment B-B' of FIG. 35 in one of the manufacturing stages. It should be noted that due to the cross-sectional viewing angle relationship, in FIGS. 36 to 38A, the remaining base layer 340b′, the remaining ohmic contact layer 330′, the remaining semiconductor stack 320″, and the remaining electrode layer 370′ Both have the same width.

Please refer to FIG. 35 and FIG. 36 at the same time. An opening 352 is formed in the sacrificial layer 350 to expose a part of the carrier substrate 360.

Please refer to FIG. 37, then an insulating layer 380 is formed to continuously cover one of the remaining base layer 340b′, the remaining ohmic contact layer 330′, the remaining semiconductor stack 320″, the remaining electrode layer 370′, and the sacrificial layer 350 A portion 350a of the surface, the opening 352, and the exposed portion of the carrier substrate 360. Specifically, the insulating layer 380 has a first portion 380a covering the sacrificial layer The portion 350a of the top surface of 350, and the insulating layer 380 has a second portion 380b coupled to the first portion 380a and covers the sidewalls of the remaining multilayer structure (including 340b', 330', 320" and 370'). The first part 380a and the second part 380b are constructed like an "L" shape. The portion of the sacrificial layer 350 that is not covered by the insulating layer 380 (ie, the exposed portion 350P) and the portion 350a of the top surface of the sacrificial layer 350 that is covered by the first portion 380a of the insulating layer 380 are located in the remaining multilayer structure (including 340b' , 330', 320" and 370') on opposite sides.

Please refer to FIGS. 38A and 38B at the same time to remove the sacrificial layer 350. In detail, the sacrificial layer 350 may be removed from the exposed portion 350P of the sacrificial layer using an etching solution. As shown in FIG. 38A, after the sacrificial layer 350 is etched, a portion of the insulating layer 380 will form a support frame 382, and the support frame 382 may be used to replace the remaining electrode layer 370', the remaining semiconductor stack 320", and the remaining The ohmic contact layer 330' and the remaining base layer 340b' are suspended above the carrier substrate 360. Since only the support frame 382 supports the upper structure after the sacrificial layer 350 is removed, the support frame 382 can be easily broken In addition, in some embodiments, only part of the sacrificial layer 350 is removed. For example, part of the sacrificial layer 350 is removed from the upper surface of the sacrificial layer 350, so that the remaining electrode layer 370', the remaining semiconductor stack The layer 320 ″, the remaining ohmic contact layer 330 ′ and the remaining base layer 340 b ′ are suspended above the carrier substrate 360. In other words, it is not necessary to completely remove the animal layer 350, as long as the support frame 382 can be broken. In FIG. 38B, the insulating layer 380 at least continuously covers one side wall of the remaining base layer 340b', one side wall of the remaining ohmic contact layer 330', one side wall of the remaining semiconductor stack 320", and the remaining electrode layer One of the side walls of 370', and exposes a portion 330'a of the top surface of the remaining ohmic contact layer 330'. The exposed portion 330'a of the top surface of the remaining ohmic contact layer 330' serves as a stage for electrical contact. In some embodiments, the insulating layer 380 may also cover a portion of the top surface of the remaining electrode layer 370'.

Returning to FIG. 38A, the support frame 382 of the insulating layer 380 is broken to form a separate light-emitting diode structure. It should be noted that, after the step of breaking the support frame 382, a support area SP will be formed on the individual light emitting diode structure. In more detail, the support area SP may include the support frame 382 breaking at the turning position 382P of the first part 380a and the second part 380b, or the support frame 382 breaking at any place of the first part 380a, or the second part Part 380b is detached from the sidewall of the remaining multilayer structure (340b', 330', 320" or 370'). In some embodiments, this separate light emitting diode structure may be disposed on the solid crystal substrate 170 to form the second The light emitting diode structure 20 shown in the figure. In addition, an adhesive layer 160 may be further formed on the solid crystal substrate 170, and then the separate light emitting diode may be disposed on the adhesive layer 160 to increase the distance between the two. The adhesion of the light-emitting diode structure 20 shown in Figure 2 has been described above and will not be repeated here. It is worth noting that the above-mentioned process operations are only exemplary illustrations, each operation The order can be changed according to requirements. In some embodiments, additional operations can be performed before, during, or after the above process.

Another aspect of the present invention is to provide a method for manufacturing the light emitting diode structure 30. 39 to 50 are schematic cross-sectional views at various stages of manufacturing the light-emitting diode structure 30 according to an embodiment of the present invention. in order to It is convenient to compare the differences between the above embodiments and simplify the description. In the following examples, the same symbols are used to mark the same elements, and the differences between the embodiments are mainly described, and the description is not repeated. Repeat in part. As shown in FIG. 39, first, a precursor structure 70 is provided. The precursor structure 70 includes an electrode layer 370, an epitaxial stack 320, and a growth substrate 310 in order from top to bottom. Specifically, the epitaxial stack 320 includes a first-type semiconductor layer 322, a light-emitting layer 324, a second-type semiconductor layer 326, and an undoped III-V semiconductor layer 328 located on the growth substrate 310 from top to bottom. The type-two semiconductor layer 326 includes a first portion 326a and a second portion 326b, and the first portion 326a is located on the second portion 326b.

Next, referring to FIG. 40, remove part of the electrode layer 370 and part of the epitaxial stack 320 of the precursor structure 70 as shown in FIG. 39, so that the width of the remaining first part 326a' is smaller than that of the second part 326b width. In more detail, when a part of the epitaxial stack 320 is removed, only a part of the first part 326a of the second type semiconductor layer 326 is removed, so that the second part 326b of the second type semiconductor layer 326 is exposed. Therefore, after completing this step, the width of the remaining electrode layer 370' is substantially equal to the width of the remaining first-type semiconductor layer 322', and the width of the remaining light-emitting layer 324' is substantially equal to the width of the first-type semiconductor layer 322', and The width of the remaining first portion 326a' of the second type semiconductor layer 326 is substantially equal to the width of the first type semiconductor layer 322'. In one embodiment, the lithography etching process and the time of the etching process can be controlled to complete this step.

Next, referring to FIG. 41, an insulating layer 380 is formed to cover the remaining precursor structure 70' as shown in FIG. 40. More specifically, insulation The layer 380 continuously covers the exposed surface of the second portion 326b of the second type semiconductor layer 326, the sidewall of the remaining first portion 326a' of the second type semiconductor layer 326, the sidewall of the remaining light emitting layer 324', and the remaining first type The sidewall of the semiconductor layer 322' and the sidewall and surface of the remaining electrode layer 370'.

As shown in FIG. 42, a part of the insulating layer 380 and a part of the second part 326b of the second type semiconductor layer 326 are then removed to expose the undoped semiconductor layer 328. In one embodiment, a lithography etching process can be used to complete this step. It should be noted that after completing this step, the width of the second portion 326b' of the remaining second type semiconductor layer 326' must be greater than the width of the first portion 326a'. This design allows the second portion 326b' of the remaining second type semiconductor layer 326' to serve as a stage for electrical contact.

As shown in FIG. 43, in some embodiments, a conductive block 390 may be formed on the second portion 326b' of the remaining second-type semiconductor layer 326'. In one embodiment, the method of forming the conductive block 390 includes the following steps, for example. First, a patterned mask (not shown) is formed on the insulating layer 380 where the conductive block 390 is expected to be formed, and the patterned mask has an opening (not shown) so that the remaining second type semiconductor layer 326' A part of the second part 326b' is exposed through the opening 380R2. Thereafter, a conductive block 390 is formed in the opening 380R2 by sputtering, evaporation, electroplating, or electroless plating. In some embodiments, the conductive block 390 includes aluminum, copper, nickel, gold, platinum, titanium, or other suitable metal materials. In some embodiments, the top surface 380t of the insulating layer 380 on the remaining electrode layer 370' is substantially flush with the top surface 390t of the conductive block 390.

As shown in FIG. 44, an opening 380R1 is formed in the insulating layer 380 on the remaining electrode layer 370' to expose a part of the remaining electrode layer 370'. In one embodiment, the method of forming the opening 380R1 can be expected to form a patterned mask (not shown) on the insulating layer 380 forming the opening 380R1, and the patterned mask has an opening (not shown), so that A part of the remaining electrode layer 370' is exposed through the opening 380R1.

Next, as shown in FIG. 45, a first conductive pad 432 is formed in the opening 380R1 and a second conductive pad 434 is formed to cover the top surface 390t of the conductive block 390 and its side wall 390s. In various embodiments, the first conductive pad 432 and the second conductive pad 434 may include aluminum, copper, nickel, gold, platinum, titanium, or titanium. Other suitable conductive materials. In some embodiments, the first conductive pad 432 and the second conductive pad 434 may be formed by sputtering, evaporation, electroplating, or electroless plating. In an embodiment, the first conductive pad 432 and the second conductive pad 434 can be fabricated at the same time, or can be fabricated separately.

Referring to FIG. 46, a sacrificial layer 350 is formed to cover the structure shown in FIG. 45. In more detail, the sacrificial layer 350 covers the insulating layer 380, the first conductive pad 432 and the second conductive pad 434, and the sacrificial layer 350 has an opening 350R to expose the insulating layer 380. In more detail, the opening 350R is located between the first conductive pad 432 and the second conductive pad 434.

Please refer to FIG. 47. Next, a support layer 410 is formed to cover the sacrificial layer 350 and fill the opening 350R. In some embodiments, the supporting layer 410 may include an insulating material, a metal material, or other materials having a supporting effect. For example, the insulating material includes silicon oxide, silicon nitride, silicon oxynitride, Epoxy resin; and metal materials include aluminum, titanium, gold, platinum or nickel, etc., but not limited to this.

As shown in FIG. 48, a carrier substrate 360 is then formed on the support layer 410. In various embodiments, an adhesive layer 420 may be used to adhere the carrier substrate 360 to the support layer 410 to improve the bonding force between the carrier substrate 360 and the support layer 410. It should be noted that after the carrier substrate 360 is formed on the support layer 410, the structure as shown in FIG. 48 is turned so that the growth substrate 310 is at the top and the carrier substrate 360 is at the bottom. Next, referring to FIG. 49, the growth substrate 310 and the undoped semiconductor layer 328 are removed, and a surface 326s of the remaining second type semiconductor layer 326' is exposed. In one embodiment, the exposed surface 326s of the remaining second type semiconductor layer 326' has a rough texture (not shown). In various examples, the rough texture may contain regular patterns or irregular patterns.

Referring to FIG. 50, the sacrificial layer 350 is removed. In detail, the sacrificial layer 350 can be removed using an etching solution. After the sacrificial layer 350 is etched, a part of the support layer 410 will form a support frame 412, and the support frame 412 may support the light emitting diode structure to be formed to be suspended above the support layer 410. Since only the support frame 412 supports the upper structure after the sacrificial layer 350 is removed, the support frame 412 can be easily broken. Furthermore, in some embodiments, only a portion of the sacrificial layer 350 is removed. In other words, it is not necessary to completely remove the animal layer 350, as long as the support frame 412 can be broken. Then, the support frame 412 of the support layer 410 is broken to form a single light-emitting diode structure. In an embodiment, after the support frame 412 breaks, a part of the support frame 412 may remain on the separate light-emitting diode structure The remaining partial support frame 412 will not be cleaned again. In another embodiment, after the support frame 412 is broken, the support frame 412 may not remain on the structure of the single light-emitting diode at all. In other embodiments, in order to break the support frame 412, the insulating layer 380 on the upper part of the separate light emitting diode structure may be removed. In some embodiments, the first conductive pad 432 and the second conductive pad 434 in the separate light-emitting diode structure can be electrically connected to the solid crystal substrate through the first adhesive layer 162 and the second adhesive layer 164, respectively 170 to form the light emitting diode structure 30 as shown in FIG. 3. Various features of the light emitting diode structure 30 shown in FIG. 3 have been described above, and are not repeated here. It is worth noting that the above-mentioned process operations are only illustrative, and each operation can be arbitrarily exchanged in accordance with requirements. In some embodiments, additional operations may be performed before, during, or after the above process.

The light-emitting diode structure and its manufacturing method of the present invention can be applied not only to traditional light-emitting diodes and micro-light-emitting diodes down to the micron (μm) level, but also to displays and wearable devices. in.

In summary, the light-emitting diode structure provided by the present invention may include a distributed Bragg reflector or a metal layer to guide the light emitted by the light-emitting diode as upwardly emitted light, thereby increasing the light extraction efficiency. Moreover, since the width of the electrical contact layer in the light emitting diode structure of the present invention is greater than the width of the semiconductor stack, the electrical contact layer can be used as a stage for electrical contact. Furthermore, the electrical contact layer of the light emitting diode structure of the present invention may further include a double-layer conductive layer (for example, an ohmic contact layer and a metal layer). The design of the conductive layer can ensure that the light-emitting diode structure has a stage that can serve as a conductive contact. this In addition, the light-emitting diode structure provided by the present invention can also use the second part of the second type semiconductor layer to replace the electrical contact layer as a stage for electrical contact, and the second part of the second type semiconductor layer is exposed The surface with rough texture can improve the light extraction efficiency.

In addition, compared to the traditional manufacturing method that requires two temporary substrate bonding and two temporary substrate removal processes, the manufacturing method of the light emitting diode structure provided by the present invention only requires one temporary substrate bonding and one removal Temporary substrate manufacturing process. There is a significant improvement in process yield, alignment, and accuracy of LED spacing. Moreover, in the process of transferring the structure of the light emitting diode, the use of the formation of the bracket can reduce the transfer time of the light emitting diode.

Although the present invention has been disclosed as above in an embodiment, it is not intended to limit the present invention. Anyone who is familiar with this art can make various modifications and retouching without departing from the spirit and scope of the present invention, so the protection of the present invention The scope shall be as defined in the appended patent application scope.

10‧‧‧ LED structure

110‧‧‧ Basement

120‧‧‧Electrical contact layer

122‧‧‧First metal layer

124‧‧‧ohm contact layer

130‧‧‧semiconductor stack

132‧‧‧Type 1 semiconductor layer

134‧‧‧luminous layer

136‧‧‧Type 2 semiconductor layer

140‧‧‧Insulation

150‧‧‧electrode layer

160‧‧‧adhesive layer

170‧‧‧Solid crystal substrate

W1, W2, W3, W4, W5 ‧‧‧ maximum width

Claims (19)

A light emitting diode structure includes: a base layer having a maximum first width; an electrical contact layer having a maximum second width and disposed on the base layer; a semiconductor stack having a maximum third The width is set on the electrical contact layer, and the semiconductor stack contacts the electrical contact layer, the semiconductor stack includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer are sequentially stacked, wherein The widths of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer are substantially less than or equal to the maximum third width; and an insulating layer covering at least one side wall of the base layer and the electrical contact layer A sidewall and a sidewall of the semiconductor stack, wherein the maximum second width is greater than the maximum third width, and the maximum second width is less than or equal to the maximum first width. As in the light-emitting diode structure of claim 1, the electrical contact layer is a single layer, and the maximum second width is substantially equal to the maximum first width. As in the light-emitting diode structure of claim 1, the electrical contact layer includes an ohmic contact layer and a first metal layer. The ohmic contact layer has a maximum fourth width and is disposed on the semiconductor stack and the Between the base layers, the first metal layer has a maximum fifth width and is disposed on Between the ohmic contact layer and the base layer, the maximum fourth width is less than or substantially equal to the maximum first width, and the maximum fifth width is substantially equal to the maximum first width. A light emitting diode structure as claimed in item 3 of the patent scope, wherein the maximum fourth width is substantially equal to the maximum third width. For example, the light-emitting diode structure of the first item of the patent application scope further includes an electrode layer disposed on the semiconductor stack. For example, in the light-emitting diode structure of claim 5, the electrode layer can be penetrated by the light emitted by the light-emitting layer. For example, in the light-emitting diode structure of claim 5, the electrode layer is a second metal layer. The light emitting diode structure as claimed in item 1 of the patent scope, wherein the base layer comprises a dielectric material or a metal material. As in the light-emitting diode structure of claim 1, the base layer includes a distributed Bragg reflector (Distributed Bragg Reflector), and the insulating layer covers at least one side wall of the distributed Bragg reflector. As in the light-emitting diode structure of the ninth patent application, when the base layer includes the dispersed Bragg reflector, the electrical contact layer can be penetrated by the light emitted by the light-emitting layer. A light emitting diode structure includes: a semiconductor stack including a first type semiconductor layer, a light emitting layer and a second type semiconductor layer in order from top to bottom, wherein the second type semiconductor layer includes a first portion And a second part, and the first part is located on the second part, the maximum width of the second part is greater than the maximum width of the first part; an insulating layer covering one side wall of the semiconductor stack and the second part An upper surface, and the insulating layer has a first opening and a second opening respectively located on the first type semiconductor layer and the second portion; a first conductive pad is electrically connected to the through the first opening A first-type semiconductor layer; a second conductive pad electrically connected to the second portion through the second opening; and a support area located above the insulating layer and located between the first conductive pad and the second conductive pad There is a distance between the supporting area and the first conductive pad and the second conductive pad respectively. For example, the light-emitting diode structure according to item 11 of the patent application further includes a solid crystal substrate electrically connected to the first conductive pad and the second conductive pad. For example, the light-emitting diode structure according to item 12 of the patent application scope further includes a first adhesive layer and a second adhesive layer respectively located between the first conductive pad and the solid crystal substrate and the second conductive pad and the solid Between the crystal substrates, the first adhesive layer and the second adhesive layer are electrically insulated. For example, the light-emitting diode structure of claim 11 of the patent application further includes an electrode layer disposed between the first type semiconductor layer and the first conductive pad. For example, the light-emitting diode structure of claim 11 further includes a conductive block disposed in the second opening, and the second conductive pad covers a top surface and a side wall of the conductive block. As in the light-emitting diode structure of claim 15, the top surface of the insulating layer on the first portion is substantially flush with the top surface of the conductive block. A light emitting diode structure as claimed in item 11 of the patent application, wherein the first conductive pad extends to cover a part of the insulating layer. A light emitting diode structure as claimed in item 11 of the patent application, wherein a top surface of the first conductive pad and a top of the second conductive pad The surface is substantially flush. A light emitting diode structure as claimed in item 11 of the patent application, wherein the second type semiconductor layer has a surface exposed to the outside, and the surface has a rough texture.

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