CN112968081A - Red light LED chip, preparation method and display panel - Google Patents
Red light LED chip, preparation method and display panel Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000006185 dispersion Substances 0.000 claims abstract description 183
- 229910052751 metal Inorganic materials 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 95
- 230000001070 adhesive effect Effects 0.000 claims abstract description 35
- 239000000853 adhesive Substances 0.000 claims abstract description 33
- 239000002070 nanowire Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 93
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000003292 glue Substances 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 37
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 239000004925 Acrylic resin Substances 0.000 claims description 13
- 229920000178 Acrylic resin Polymers 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 471
- 230000008569 process Effects 0.000 description 25
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The invention relates to a red light LED chip, a preparation method and a display panel, wherein when the red light LED chip is prepared, a hole dispersion layer is formed by adopting an adhesive in which nano metal wires are dispersed, and the nano metal wires are ensured to be uniformly distributed on at least one side of the hole dispersion layer close to a red light epitaxial layer, so that the holes are uniformly dispersed on the whole surface of the red light epitaxial layer, electrons at the electrode are dispersed by utilizing the excellent conductivity of the metal nanowires, the gathering of the electrons is reduced, the electrons/holes are uniformly distributed on the light emitting surface of the red light epitaxial layer, and the light emitting effect of the red light epitaxial layer is improved.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a red light LED chip, a preparation method and a display panel.
Background
Because of the problem of the material of the epitaxial layer of the red LED chip, an ITO (indium tin oxide) layer must be disposed on the P-type semiconductor layer, otherwise, electrons will directly pass through the active layer from the P-electrode to the N-electrode on the N-type semiconductor layer through the shortest path, and the light emission of the red LED chip is not uniform. The ITO layer mainly plays a role in hole transmission and hole dispersion in the red LED chip and is used for dispersing holes on the whole surface of the P-type semiconductor layer. However, ITO is a semiconductor material, and the hole dispersion effect is not ideal, and the light extraction effect of the red LED chip is not good.
Therefore, how to improve the effect of dispersing holes in the red epitaxial layer is an urgent problem to be solved.
Disclosure of Invention
In view of the defects of the related art, an object of the present application is to provide a red LED chip, a manufacturing method thereof, and a display panel, which aim to solve the problem in the related art that the hole dispersion effect is poor and the light emitting uniformity of the red LED chip is affected due to the fact that an ITO layer is used for hole dispersion.
A red LED chip preparation method comprises the following steps:
arranging a hole dispersion layer containing nano metal wires on a red light epitaxial layer of a growth substrate, wherein the nano metal wires are dispersed in adhesive glue in the hole dispersion layer and at least uniformly spread on one side of the hole dispersion layer close to the red light epitaxial layer;
combining the hole dispersion layer and the insulating substrate together by using a bonding layer and removing the growth substrate so as to transfer the red light epitaxial layer from the growth substrate to the insulating substrate;
electrodes which are respectively and electrically connected with the two semiconductor layers of the red light epitaxial layer are arranged;
the bonding layer is decomposed to separate the hole dispersion layer from the insulating substrate.
In the preparation method of the red light LED chip, when the red light LED chip is prepared, the hole dispersion layer is formed by the adhesive in which the nano metal wires are dispersed, and the nano metal wires are ensured to be uniformly distributed on at least one side of the hole dispersion layer close to the red light epitaxial layer, so that the holes are uniformly dispersed on the whole surface of the red light epitaxial layer, electrons at the electrode are dispersed by utilizing the excellent conductivity of the metal nanowires, the gathering of the electrons is reduced, the electrons/holes are uniformly distributed on the light-emitting surface of the red light epitaxial layer, and the light-emitting effect of the red light epitaxial layer is improved.
Optionally, bonding the hole-dispersing layer and the insulating substrate together with a bonding layer comprises:
providing a gallium nitride layer as a bonding layer on an insulating substrate;
one surface of the gallium nitride layer, which is far away from the insulating substrate, is close to the hole dispersion layer and is attached to the hole dispersion layer;
the decomposition bonding layer includes: the gallium nitride layer is decomposed using a laser.
In the preparation method of the red light LED chip, the gallium nitride layer is further adopted to combine the hole dispersion layer and the insulating substrate and remove the growth substrate, and the red light epitaxial layer is transferred to the insulating substrate from the growth substrate, so that the electrode of the red light LED chip can be conveniently prepared in the subsequent process. Meanwhile, the gallium nitride layer is easily decomposed under the action of laser, so that the gallium nitride layer can be thoroughly removed in a simple mode, the process of stripping the red light LED chip and the insulating substrate is facilitated, the separation effect of the red light LED chip and the insulating substrate is favorably improved, and the quality and the production efficiency of the red light LED chip are improved.
Optionally, the red epitaxial layer is used for forming a plurality of red LED chips; before decomposing the bonding layer, the method further comprises:
and patterning the hole dispersion layers which can be used for forming a plurality of red LED chips to form a plurality of sub-hole dispersion layers, wherein each sub-hole dispersion layer is used for forming one red LED chip, and gaps exist among the sub-hole dispersion layers.
In the preparation method of the red light LED chip, before the bonding layer is decomposed, the hole dispersion layer is subjected to graphical processing, so that a large-area hole dispersion layer is divided into the sub-hole dispersion layers corresponding to the single red light LED chip, and gaps are formed among the sub-hole dispersion layers, so that gas generated when the gallium nitride layer is decomposed is discharged from the gaps, the condition that the fragile red light epitaxial layer is damaged due to gas impact is avoided, the red light epitaxial layer is protected, and the quality of the red light LED chip is improved.
Optionally, the nano metal wire is a nano silver wire.
In the preparation method of the red light LED chip, the nano silver wire is used as the nano metal wire in the hole dispersion layer, and the low resistance characteristic of the nano silver wire is utilized, so that the dispersion effect of the hole dispersion layer on the hole is further improved, and the light emitting effect of the red light LED chip is enhanced.
Optionally, disposing a hole-dispersing layer comprising nano-metal wires on a red epitaxial layer disposed on a growth substrate comprises:
obtaining a hole dispersion layer;
and attaching the hole dispersion layer on the red light epitaxial layer, wherein nano metal wires are distributed on one side of the hole dispersion layer, which is in contact with the red light epitaxial layer.
According to the red light LED chip preparation method, the hole dispersion layer with the nano metal wires distributed on at least one side can be obtained firstly, and then the hole dispersion layer is arranged on the red light epitaxial layer in a film pasting mode, so that the preparation process is simple, the process of arranging the hole dispersion layer basically cannot influence the red light epitaxial layer, and the quality of the red light LED chip and the production efficiency of the red light LED chip are improved.
Based on the same inventive concept, the present application further provides a red light LED chip, comprising:
a red light epitaxial layer;
a hole-dispersing layer; and the number of the first and second groups,
an electrode;
the red light epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged; the hole dispersion layer is arranged on the second semiconductor layer in a fitting mode, the hole dispersion layer comprises adhesive glue and nano metal wires dispersed in the adhesive glue, and the nano metal wires are at least uniformly distributed on one side, close to the red light epitaxial layer, of the hole dispersion layer; the electrodes include a first electrode connected to the first semiconductor layer and a second electrode connected to the hole dispersion layer.
In the red light LED chip, the hole dispersion layer is formed by the adhesive dispersed with the nano metal wires, and the nano metal wires are ensured to be uniformly distributed on one side of the hole dispersion layer close to the red light epitaxial layer at least, so that the holes are uniformly dispersed on the whole red light epitaxial layer, the electrons at the electrodes are dispersed by utilizing the excellent conductive performance of the metal nanowires, the gathering of the electrons is reduced, the electrons/holes are uniformly distributed on the light-emitting surface of the red light epitaxial layer, and the light-emitting effect of the red light LED chip is improved.
Optionally, the nano-metal wire is a nano-silver wire.
In the red light LED chip, the nano silver wire is used as the nano metal wire in the hole dispersion layer, the low-resistance characteristic of the nano silver wire is utilized, the dispersion effect of the hole dispersion layer on the hole is further improved, and the light emitting effect of the red light LED chip is enhanced.
Optionally, the adhesive glue is an acrylic resin.
Optionally, the nano-metal wires are distributed only on one side of the hole dispersion layer close to the red light epitaxial layer.
In the red light LED chip, the nano metal wires are only distributed on one side of the hole dispersion layer close to the red light epitaxial layer, so that the requirement of the hole dispersion layer on the electric conductivity can be met, the purpose of uniformly dispersing holes is achieved, the using amount of the nano metal wires can be reduced, the production cost is saved, and the production benefit is increased.
Based on the same inventive concept, the application also provides a display panel, the display panel comprises a driving circuit board and a plurality of red light LED chips, and the electrodes of the red light LED chips are electrically connected with the driving circuit board.
The display panel is manufactured based on the red light LED chip, because the red light LED chip adopts the adhesive in which the nano metal wires are dispersed to form the hole dispersion layer, and the nano metal wires are at least uniformly distributed on one side of the hole dispersion layer close to the red light epitaxial layer. Therefore, by utilizing the excellent conductive performance of the metal nanowires, the hole dispersion layer can uniformly disperse holes to the whole surface of the red light epitaxial layer, so that the gathering of electrons is reduced, and the light emission is uniform. The display panel manufactured based on the red LED chip also has a better display effect.
Drawings
FIG. 1 is a flow chart of a method of making a red LED chip provided in an alternative embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating the state changes of the processes during the fabrication of a red LED chip according to an alternative embodiment of the present invention;
FIG. 3 is a schematic view of a hole-dispersing layer provided in an alternative embodiment of the present invention;
fig. 4 is a flow chart of forming a hole injection layer on a red epitaxial layer according to an alternative embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating the state change of the processes for forming a hole distribution layer according to an alternative embodiment of the present invention;
FIG. 6 is a schematic diagram of a red LED chip according to another alternative embodiment of the present invention;
FIG. 7 is a flow chart of a method for fabricating a red LED chip according to yet another alternative embodiment of the present invention;
fig. 8 is a schematic diagram illustrating a state change of each process in the process of manufacturing a red LED chip according to another alternative embodiment of the present invention.
Description of reference numerals:
20-a growth substrate; 21-red epitaxial layer; 22-a hole-dispersing layer; 23-a bonding layer; 24-an insulating substrate; 50-a growth substrate; 51-red epitaxial layer; 52-a hole-dispersing layer; 521-a metal wire layer; 522-pure glue layer; 60-red LED chips; 611 — a first semiconductor layer; 612-an active layer; 613-second semiconductor layer; 62-a hole-dispersing layer; 631-a first electrode; 632-a second electrode; 80-a growth substrate; 811-N type semiconductor layer; 812-an active layer; 813-P type semiconductor layers; 82-a hole-dispersing layer; 83-a gallium nitride layer; 84-sapphire substrate.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, ITO is used as a hole dispersion layer, but the ITO is used as a semiconductor material, the hole dispersion capability is limited, and the problem of uneven light emission of a red LED chip cannot be well solved.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
An alternative embodiment:
the present embodiment provides a method for preparing a red LED chip, please refer to the flowchart of the method for preparing a red LED chip shown in fig. 1 and the schematic diagram of the state change of each process in the process of preparing a red LED chip shown in fig. 2:
s102: and arranging a hole dispersion layer containing nano metal wires on the red light epitaxial layer arranged on the growth substrate.
The red epitaxial layer 21 in this embodiment refers to an epitaxial layer for forming a red LED chip, and includes a first semiconductor layer, a second semiconductor layer, and an active layer therebetween. It is to be understood that one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. In the present embodiment, when the red epitaxial layer 21 is located on the growth substrate 20, the first semiconductor layer is located below the second semiconductor layer, as shown in fig. 2 (a). In this embodiment, the hole dispersion layer 22 is disposed on the red epitaxial layer 21, that is, the hole dispersion layer 22 is disposed on the second semiconductor layer of the red epitaxial layer 21, and the hole dispersion layer 22 may be disposed on the second semiconductor layer in a fitting manner.
And the hole dispersion layer 22 is used for realizing hole dispersion and avoiding the problem that holes are gathered in the electrode setting area, so that the light of the red LED chip is not uniform. In view of the limited hole dispersing ability of the ITO layer, other layer structures having a hole dispersing effect will be used in this embodiment instead of the ITO layer: the nano metal wire has better conductivity, and a hole dispersion layer containing the nano metal wire can be arranged. In this embodiment, the nano-metal wires are dispersed in the adhesive of the hole dispersion layer. In some examples of the present embodiment, the nano-metal lines are uniformly distributed in all regions of the hole dispersion layer 22, as shown in fig. 3. In some other examples of the present embodiment, the nano-metal wires may be distributed only in a partial region within the hole dispersion layer 22:
the hole dispersion layer 22 is divided into upper and lower portions in its thickness direction, in which the lower side is closer to the red epitaxial layer 21, and then the lower side of the hole dispersion layer 22 must have good conductivity in order to realize the hole transport function of the hole dispersion layer. Therefore, in some examples of the present embodiment, when the nano-metal wires are distributed only in a partial region of the hole distribution layer 22, they should be uniformly distributed at least on the side of the hole distribution layer 22 close to the red epitaxial layer 21, as shown in fig. 2(b), so as to ensure that the holes are distributed more uniformly over the entire surface of the second semiconductor layer.
Compared with the scheme that the nano metal wires are distributed in all the areas of the hole dispersion layer 22, the scheme that the nano metal wires are arranged on one side of the hole dispersion layer 22 can reduce the using amount of the nano metal wires and the cost for preparing the hole dispersion layer.
In some examples of the present embodiment, the adhesive glue may be an acrylic resin, for example in one example of the present embodiment, the adhesive glue is an acrylic resin. Of course, it will be understood by those skilled in the art that the adhesive glue may be other glue having an adhesive effect than acrylic resin.
In some examples of the present embodiment, the material of the nano metal line may include, but is not limited to, at least one of silver, copper, gold, aluminum, tungsten, nickel, iron, and the like. Because the resistivity of silver is very low, in some examples of the present embodiment, the nano-metal wires may be nano-silver wires. In another example of the present embodiment, the nano metal wire may be a nano copper wire, which is relatively low in cost although the nano copper wire is not as conductive as the nano silver wire.
In some examples of the embodiment, the hole dispersion layer 22 may be attached to the red epitaxial layer 21 after being prepared, for example, the hole dispersion layer is obtained in advance by purchasing or preparing, and then the hole dispersion layer 22 is attached to the red epitaxial layer 21. It is needless to say that if only one side of the hole dispersion layer 22 is uniformly distributed over the nano-metal wires, it should be ensured that the side of the hole dispersion layer 22 where the nano-metal wires are distributed faces the red epitaxial layer 21 when the hole dispersion layer 22 is attached. Of course, if the nano metal wires are distributed in all the regions of the hole dispersion layer 22, it may not be necessary to distinguish the orientation of the hole dispersion layer 22 when attaching the hole dispersion layer 22.
It can be understood that, when the hole dispersion layer is disposed in an attaching manner, a large area of the hole dispersion layer is usually disposed on a large area of the red light epitaxial layer, because the size of a single red light LED chip is extremely small, and the yield of the red light LED chip is huge, if the hole dispersion layer corresponding to the single red light LED chip is attached to the red light epitaxial layer corresponding to the single red light LED chip, the workload is too large, which may result in a problem of low production efficiency of the red light LED chip.
In other examples of the present embodiment, the hole dispersion layer 22 may also be temporarily formed on the red epitaxial layer 21, for example, in some examples of the present embodiment, all regions in the finally formed hole dispersion layer 22 are distributed over the nano-metal wires, and then the hole dispersion layer 22 may be formed on the red epitaxial layer 21 in the following manner:
the nano metal wires are uniformly mixed in the liquid adhesive to form metal mixed glue, then the metal mixed glue is arranged on the red light epitaxial layer 21 in the modes of spin coating, coating and the like, and after the metal mixed glue on the red light epitaxial layer 21 is solidified, a hole dispersion layer arranged on the red light epitaxial layer 21 can be obtained.
In other examples of the present embodiment, in the finally formed hole dispersion layer, only one side near the red epitaxial layer 21 has metal nanowires distributed therein, and the other side has no metal nanowires, so that the arrangement shown in fig. 4 and 5 can be adopted when forming the hole dispersion layer 22 on the red epitaxial layer 21, fig. 4 is a flow chart of forming the hole dispersion layer on the red epitaxial layer, and fig. 5 is a schematic diagram of the state change of the processes when forming the hole dispersion layer:
s402: and uniformly mixing the nano metal wires in the liquid adhesive to form the metal mixed adhesive.
Taking the nano metal wire as the nano silver wire and the adhesive glue as the acrylic resin as an example for explanation, the acrylic resin is melted to be in a liquid state, and then the nano silver wire with a certain proportion is mixed in the acrylic resin to form the metal mixed glue.
S404: and arranging metal mixed glue on the red light epitaxial layer, and carrying out incomplete curing treatment on the metal mixed glue until the adhesive glue loses fluidity to form a metal wire layer.
Shown in fig. 5(a) is a red epitaxial layer 51 on a growth substrate 50, with an N-type semiconductor layer below the red epitaxial layer 51, a P-type semiconductor layer above, and an active layer between the N-type and P-type semiconductor layers. Fig. 5(b) shows a schematic diagram of disposing the metal wire layer 521 on the red epitaxial layer 51, when disposing the metal wire layer 521, a metal mixed paste may be disposed on the red epitaxial layer 51 by any one of spin coating, and the like, and then the metal mixed paste is subjected to a non-complete curing process until the adhesive paste in the metal mixed paste loses fluidity.
S406: and arranging adhesive glue on the metal wire layer to form a pure glue layer.
After the metal wire layer 521 is formed, pure adhesive glue may be disposed on the metal wire layer 521, thereby forming a pure glue layer 522, as shown in fig. 5 (c). When the adhesive is acrylic, the clear adhesive layer 521 is formed of clear acrylic. It will be appreciated that the metal wire layer 521 and the clear adhesive layer 522 together form the hole dispersion layer 52.
In the present example, the metal hybrid paste is not completely cured on the red epitaxial layer 51, but the pure glue layer 522 is disposed after the semi-curing, so that the pure glue layer and the adhesive paste in the metal line layer 521 that is not completely cured can be better fused, and a distinct boundary between the pure glue layer 522 and the metal line layer 521 can be avoided. Of course, it can be understood by those skilled in the art that in some other examples of the present embodiment, the pure glue layer 522 can be disposed after the metal wire layer 521 is completely cured.
S104: and combining the hole dispersion layer and the insulating substrate together by using the bonding layer and removing the growth substrate so as to transfer the red epitaxial layer from the growth substrate to the insulating substrate.
After the hole dispersion layer 22 is provided on the red epitaxial layer 21, the insulating substrate 24 and the hole dispersion layer 22 may be bonded together using a bonding layer 23, as shown in fig. 2 (c). It is understood that, since one surface of the hole dispersion layer 22 is bonded to the red epitaxial layer 21 and the other surface is bonded due to the bonding layer 23, the bonding layer 23 bonds the insulating substrate 24 and the hole dispersion layer 22, and in fact, indirectly bonds the insulating substrate 24 and the red epitaxial layer 21.
In some examples of the present embodiment, the bonding layer 23 has adhesiveness, and in this case, the bonding layer 23 may be provided on the hole dispersion layer 22 first, and then the insulating substrate 24 may be provided on the bonding layer 23. In other examples, the bonding layer 23 may be provided on the insulating substrate 24, and then the bonding layer 23 may be provided on the hole dispersion layer 22 together with the insulating substrate 24.
For example, in an example of the present embodiment, the bonding layer 23 may be a BCB glue layer, so the BCB glue layer may be provided on the hole dispersion layer 22 first, and then the insulating substrate may be provided on the BCB glue layer. Since both the BCB glue layer and the hole dispersion layer 22 have adhesiveness, the BCB glue layer can be bonded to the hole dispersion layer 22. Meanwhile, since the BCB paste layer has adhesiveness, it can adhere to the insulating substrate 24. In another example of the embodiment, the BCB glue layer may be disposed on the insulating substrate 24 by using the adhesion of the BCB glue layer, and then the side of the insulating substrate 24 on which the BCB glue layer is disposed is close to the hole dispersion layer 22, so that the hole dispersion layer 22 and the BCB glue layer are bonded together.
In other examples of the present embodiment, the bonding layer 23 itself does not have adhesiveness, and in this case, the bonding layer 23 is first provided on the insulating substrate 24 by sputtering, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), EV (Evaporate, evaporation, ALD (atomic layer Deposition), PECVFD (plasma enhanced Chemical Vapor Deposition), or the like, and then the bonding of the bonding layer 23 and the hole dispersion layer 22 is realized by the adhesiveness of the adhesive in the hole dispersion layer 22.
For example, in some examples of the present embodiment, the bonding layer 23 may be a gallium nitride layer: a gallium nitride layer is deposited on the insulating substrate 24 by an EV or PVD process, and then the surface of the insulating substrate 24 on which the gallium nitride layer is disposed is close to the hole dispersion layer 22, so that the hole dispersion layer 22 is adhered to the gallium nitride layer.
In the present embodiment, the insulating substrate 24 may include, but is not limited to, a sapphire substrate.
After the bonding layer 23 and the insulating substrate 24 are provided on the hole dispersion layer 22, the bonding of the red epitaxial layer 21 and the insulating substrate 24 is achieved. In order to completely transfer the red epitaxial layer 21 onto the insulating substrate, it is also necessary to separate the red epitaxial layer 21 from its growth substrate 20, as shown in fig. 2 (d). The growth substrate of the red LED chip is made of gallium arsenide, and therefore, in some examples of the embodiment, the growth substrate 20 may be removed by wet etching or the like.
S106: and arranging electrodes which are respectively and electrically connected with the two semiconductor layers of the red epitaxial layer.
After the red epitaxial layer 21 is transferred onto the insulating substrate 24, an electrode may be provided on the electrode-disposed face of the red epitaxial layer 21. Compared with a chip with a positive structure and a vertical structure, the electrode of the LED chip with the inverted structure does not need routing, the packaging area can be effectively reduced, the size of the chip is reduced, the display pixels are improved, and the preparation of a high-definition display screen is facilitated. It will be appreciated that in a flip-chip red LED chip, both electrodes are on the surface of the same side of the red epitaxial layer, i.e., the electrode-disposed face of the red epitaxial layer 21. For the red LED chip of the flip-chip structure, the electrode disposition surface is the surface of the red epitaxial layer 21 away from the insulating substrate 24.
It is needless to say that, of the two electrodes of the red LED chip, the first electrode should be electrically connected to the first semiconductor layer, and the second electrode should be electrically connected to the second semiconductor layer. Since the second semiconductor layer is covered by the active layer and the second semiconductor layer since the red epitaxial layer 21 is transferred to the insulating substrate 24, the red epitaxial layer 21 needs to be etched to expose the electrode installation region of the second electrode in order to install the electrode.
Considering that the second electrode is directly arranged on the second semiconductor layer, electrons directly pass through the active layer and the first semiconductor layer from the electrode arrangement region by the shortest path to reach the first electrode, and do not laterally diffuse on the second semiconductor layer, so that the problem of uneven light emission of the red LED chip is caused. Therefore, in the present embodiment, the second electrode is to be disposed on the hole dispersion layer 22, that is, the electrode disposing region of the second electrode is located on the hole dispersion layer 22, and the second electrode is electrically connected to the second semiconductor layer through the hole dispersion layer 22. Therefore, when etching the red epitaxial layer 21, it should be ensured that the first semiconductor layer, the active layer, and the second semiconductor layer in the electrode disposition region of the second electrode are etched away so that the hole dispersion layer 22 in this region is exposed.
When the electrode setting areas of the two electrodes are exposed, the electrodes can be set. In some examples of the present embodiment, an electrode metal layer may be formed on the electrode disposition region by using a process such as evaporation or PVD, and then the first electrode and the second electrode may be formed by patterning the electrode metal layer. Shown in fig. 2(e) is a schematic view of disposing the second electrode on the hole dispersion layer 22. After the two electrodes are arranged, the preparation process of the red LED chip is basically finished.
S108: the bonding layer is decomposed to separate the hole dispersion layer from the insulating substrate.
After the process of preparing the red LED chip on the insulating substrate 24 is completed, the red LED chip can be peeled off from the insulating substrate 24. In the present embodiment, the bonding layer 23 may be decomposed using a laser, so that the bonding layer 23 is removed, breaking the bond between the insulating substrate 24 and the red epitaxial layer 21, as shown in fig. 2 (f).
In some examples of the present embodiment, the laser wavelength used for decomposing the bonding layer 23 may be arbitrarily selected, and in some examples of the present embodiment, the laser with the wavelength of 266nm may be selected for decomposing the bonding layer 23. It should be clear that this does not mean that lasers other than 266nm must have a poor or completely no effect on the decomposition of the bonding layer 23, but that they are not used for decomposing the bonding layer 23, because the wavelengths of the laser devices at present are substantially integer multiples of 266 nm. Of these laser devices, the laser device having a wavelength of 266nm is the most effective for removing the bonding layer 23, but in practice, if laser devices of other wavelengths, such as 255nm, 258nm or 260nm, are developed in the future, these laser devices are also usable.
If the bonding layer 23 is a BCB paste layer, its absorption rate of laser energy may be relatively poor, and residual paste may remain on the hole dispersion layer 22 during peeling of the insulating substrate 24. However, if the bonding layer 23 is a gallium nitride layer, this problem does not occur because the gallium nitride material has a high absorptivity to laser light and can utilize GaN → Ga + N2The principle of (2) makes insulating substrate 24 and hole disperse layer 22 thoroughly separate to avoid the cull to leave over on ruddiness LED chip, influence the problem of red light LED chip light-emitting effect, so, utilize the gallium nitride layer to promote the quality of the ruddiness LED chip that makes as anchor coat 23.
It is understood that when the bonding layer 23 is a gallium nitride layer, nitrogen gas is generated during decomposition of the bonding layer. In order to avoid nitrogen from impacting the red epitaxial layer 21 to damage the fragile red epitaxial layer 21, in some examples of the present embodiment, the hole scattering layer 22 may be patterned to form gaps for exhausting air on the hole scattering layer 22, so that nitrogen generated during the decomposition of the gallium nitride layer may be exhausted along the gaps, thereby ensuring the quality of the red LED chip.
According to the above description, when the hole dispersion layer is disposed on the red light epitaxial layer, the hole dispersion layer and the red light epitaxial layer are both large-area and correspond to more than a single red light LED chip. Therefore, in some examples of this embodiment, a large-area hole dispersion layer may be patterned to form a plurality of sub-hole dispersion layers, each sub-hole dispersion layer corresponds to one red LED chip, that is, one sub-hole dispersion layer is used to form one red LED chip, gaps exist between the sub-hole dispersion layers, and the gaps may be used as channels for discharging nitrogen gas during the gallium nitride layer decomposition process.
It is to be understood that the patterning process of the hole dispersion layer may be performed after the hole dispersion layer is disposed on the red epitaxial layer, or before the hole dispersion layer is disposed on the red epitaxial layer:
for example, in an example of the present embodiment, the hole dispersion layer is provided to the red epitaxial layer and then patterned: in this case, the hole dispersion layer may be formed on the red epitaxial layer after being prepared in advance, or may be temporarily formed on the red epitaxial layer.
In another example of the present embodiment, the hole dispersion layer is patterned before being disposed on the red epitaxial layer: in this case, the hole-dispersing layer must be prepared in advance. And the hole dispersion layer should be provided with a release film. Assuming that the two surfaces of the hole dispersion layer are both provided with release films (assuming that the release film on the surface of the hole dispersion layer in contact with the red light epitaxial layer is a first release film and the release film on the other surface is a second release film), the first release film may be removed first, and then the hole dispersion layer may be patterned from the side where the first release film is removed, so as to form a plurality of sub-hole dispersion layers. It should be noted that the integrity of the second release film should be ensured when the hole-dispersed layer is patterned. Therefore, even after the hole dispersion layer is subjected to patterning treatment to form a plurality of sub-hole dispersion layers, the sub-hole dispersion layers which are independent from each other are attached to the second release film, and the sub-hole dispersion layers can be transferred to the red light epitaxial layer through the second release film.
The red LED chip in the present embodiment may include, but is not limited to, a mini-LED (mini LED), a Micro-LED (Micro LED), or an OLED (Organic Light-Emitting Diode). The Micro-LED is a new generation display technology, has higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption compared with the existing liquid crystal display, can realize flexible display by combining a flexible panel, has the same light emitting principle compared with the traditional LED, and adopts the LED chips with RGB colors to emit light to form three primary colors, thereby realizing color pictures.
In the red light LED chip preparation method provided by this embodiment, on the one hand, the hole-dispersing layer uniformly extending over the nano metal wire in one side at least close to the red light epitaxial layer replaces the ITO layer to realize the hole-transport function, and the uniform degree of hole-dispersing is improved by utilizing the conductive property of the nano metal wire superior to the semiconductor material, so that the light-emitting of the red light LED chip is more uniform, and the light-emitting effect of the red light LED chip is enhanced.
Furthermore, in the red LED chip manufacturing method provided in this embodiment, the gallium nitride layer may also be used as a bonding layer for bonding the hole dispersion layer and the insulating substrate, so that when the insulating substrate is peeled off, the gallium nitride layer can be directly decomposed rapidly and thoroughly by using laser, the problem of residual glue left when the BCB glue layer is used as the bonding layer is avoided, and the quality of the red LED chip is improved.
Another alternative embodiment:
the present embodiment provides a red LED chip, please refer to a schematic structural diagram of the red LED chip shown in fig. 6: the red LED chip 60 includes a red epitaxial layer, a hole dispersion layer 62, and electrodes.
The red epitaxial layer includes a first semiconductor layer 611, an active layer 612 and a second semiconductor layer 613 sequentially disposed, and the hole scattering layer 62 is disposed on the second semiconductor layer 613 and attached to the second semiconductor layer 612. The hole dispersion layer 62 includes an adhesive paste and nano metal wires dispersed in the adhesive paste. Furthermore, the nano-metal wires are uniformly distributed at least on one side of the hole-dispersing layer 62 close to the red epitaxial layer. The electrodes include a first electrode 631 and a second electrode 632. It is understood that the first electrode 631 should be electrically connected to the first semiconductor layer 611, and the second electrode 632 should be electrically connected to the second semiconductor layer 613. The first electrode 631 is disposed on the first semiconductor layer 611 with a physical connection therebetween. However, the second electrode 632 is not directly provided on the second semiconductor layer 613, but is provided on the hole distribution layer 62 and electrically connected to the second semiconductor layer 613 through the hole distribution layer 62. Therefore, in the present embodiment, there is no direct contact between the second electrode 632 and the second semiconductor layer 613.
In some examples of the present embodiment, the nano-metal lines are uniformly distributed in all regions of the hole-dispersing layer 62, as shown in fig. 3. In some other examples of the present embodiment, the nano-metal wires may be distributed only in a partial region within the hole dispersion layer 62:
the hole dispersion layer 62 is divided into upper and lower portions in its thickness direction, wherein the lower side is closer to the red light epitaxial layer, and then the lower side of the hole dispersion layer 62 must have good conductivity in order to realize the hole transport function of the hole dispersion layer. Therefore, in some examples of the present embodiment, when the nano-metal wires are distributed only in a partial region of the hole distribution layer 62, they should be uniformly distributed at least on the side of the hole distribution layer 62 close to the red epitaxial layer, as shown in fig. 6, so that it is ensured that the holes are distributed more uniformly over the entire surface of the second semiconductor layer 613.
In some examples of the present embodiment, the adhesive glue may be an acrylic resin, for example in one example of the present embodiment, the adhesive glue is an acrylic resin. Of course, it will be understood by those skilled in the art that the adhesive glue may be other glue having an adhesive effect than acrylic resin.
In some examples of the present embodiment, the material of the nano metal line may include, but is not limited to, at least one of silver, copper, gold, aluminum, tungsten, nickel, iron, and the like. Because the resistivity of silver is very low, in some examples of the present embodiment, the nano-metal wires may be nano-silver wires. In another example of the present embodiment, the nano metal wire may be a nano copper wire, which is relatively low in cost although the nano copper wire is not as conductive as the nano silver wire.
The red light LED chip in this embodiment can be prepared by the red light LED chip preparation method in the foregoing embodiment, and the specific preparation process is not described herein again.
The present embodiment further provides a display panel, which includes a driving circuit board and a plurality of red LED chips. Two electrodes of the red LED chips are electrically connected with a circuit on the driving circuit board.
The red light LED chip provided by the embodiment has the advantages that the hole dispersion layer uniformly distributed over the nano metal wire in one side at least close to the red light epitaxial layer replaces an ITO (indium tin oxide) layer to realize the hole transmission function, and the uniform degree of hole dispersion is improved by utilizing the conductive performance of the nano metal wire superior to a semiconductor material, so that the red light LED chip has a uniform light emitting effect, and the quality of the red light LED chip is enhanced.
Moreover, in the process of preparing the red LED chip, the gallium nitride layer can be adopted to combine the insulating substrate and the hole dispersion layer, so that the condition that residual glue is not left on the red LED chip when the insulating substrate is stripped can be ensured, and the quality of the red LED chip is further improved.
Yet another alternative embodiment:
in order to make the advantages and details of the red LED chip and the method for manufacturing the same clearer for those skilled in the art, the present embodiment will further describe the foregoing scheme with reference to an example, please refer to the flowchart shown in fig. 7 and the schematic diagram of the process state change of the red LED chip shown in fig. 8:
s702: and growing the red epitaxial layer on the growth substrate.
In the present embodiment, the growth substrate is a gallium arsenide substrate, and referring to fig. 8(a), when a red epitaxial layer is formed on the growth substrate 80, an N-type semiconductor layer 811, an active layer 812, and a P-type semiconductor layer 813 are sequentially grown.
S704: and a hole dispersion layer is arranged on the P-type semiconductor layer of the red epitaxial layer.
In this embodiment, the hole-dispersing layer 82 is generally prepared first and is directly attached to the red epitaxial layer when it is desired to be disposed on the red epitaxial layer. In this embodiment, the adhesive in the hole dispersion layer 82 is acrylic resin, and the nano metal wires are nano silver wires. The nano silver wires are uniformly distributed on one side of the hole dispersion layer 82, and pure acrylic resin is arranged on the other side of the hole dispersion layer 82. When the hole dispersion layer 82 is disposed on the red epitaxial layer, the side of the hole dispersion layer 82 on which the nano silver wires are distributed faces the P-type semiconductor layer 813, see fig. 8 (b).
S706: and carrying out graphical treatment on the hole dispersion layer.
In this embodiment, when the hole dispersion layer 82 is patterned, the hole dispersion layer 82 needs to be divided into a plurality of independent sub-hole dispersion layers, and each sub-hole dispersion layer is used to realize a hole dispersion function in one red LED chip. In fig. 8(c), the hole-dispersed layer 82 shown can obtain two sub-hole-dispersed layers after the grain patterning process.
S708: a gallium nitride layer is disposed on a sapphire substrate.
In this embodiment, a gallium nitride layer 83 may be formed on a sapphire substrate 84 by an evaporation process, as shown in fig. 8 (d). It is understood that the gallium nitride layer 83 may be formed by other processes besides evaporation in other examples.
In addition, although the gallium nitride layer 83 is provided on the sapphire substrate 84 after the hole dispersion layer 82 is provided and patterned in the present embodiment, in other examples of the present embodiment, the gallium nitride layer 83 may be provided on the sapphire substrate 84 before the hole dispersion layer 82 is provided, or even before the growth of the red epitaxial layer. In other examples of the present embodiment, the process of forming the gallium nitride layer 83 may be performed in synchronization with the process of forming the red epitaxial layer, or in synchronization with the process of providing the hole dispersion layer 82 on the red epitaxial layer.
It is understood that the present embodiment uses a sapphire substrate as the insulating substrate, but in some other examples, a substrate made of other insulating materials may be used instead of the sapphire substrate.
S710: the gallium nitride layer and the hole dispersion layer are combined.
A sapphire substrate 84 may be used, with the side provided with the gallium nitride layer 83 being close to the hole dispersion layer 82 until the gallium nitride layer 83 adheres to the hole dispersion layer 82, see fig. 8 (e).
S712: and removing the growth substrate.
When the combination of the gallium nitride layer and the hole-spreading layer is formed, the red epitaxial layer is transferred from the growth substrate 80 to the sapphire substrate 84 as long as the red epitaxial layer is separated from the growth substrate 80 made of gallium arsenide. In some examples of the present embodiment, the growth substrate 80 may be removed by wet etching, as shown in fig. 8 (f).
S714: and etching the red epitaxial layer.
In this embodiment, since the hole distribution layer corresponds to a plurality of red LED chips, the area of the red epitaxial layer is relatively large, and also corresponds to a plurality of red LED chips, so in this embodiment, when etching the red epitaxial layer, on one hand, the electrode installation region (the hole distribution layer) of the P electrode is exposed, and on the other hand, the large-area red epitaxial layer is etched and divided into a plurality of sub-red epitaxial layers, as shown in fig. 8 (g).
S716: electrodes are provided on the N-type semiconductor layer and the hole dispersion layer.
After the electrode disposition regions of the P electrodes are exposed, electrodes may be disposed in the electrode disposition regions of the two electrodes. For example, in some examples of the present embodiment, an electrode metal layer may be formed on the electrode disposition region by using a PVD process, and then the electrode metal layer may be patterned to form the P electrode and the N electrode, as shown in fig. 8 (h).
S718: the gallium nitride layer was decomposed using a 266nm laser.
After the electrodes are prepared, the sapphire substrate 8 may be laser-peeled, as shown in fig. 8 (i). The laser wavelength used in this example was 266 nm. Of course, if laser devices of other wavelengths are developed in the future, such as laser devices emitting laser light with a wavelength of 255nm, 258nm or 260nm, these laser devices may also be used to decompose the gallium nitride layer 83.
According to the red light LED chip preparation method and the red light LED chip obtained based on the preparation method, when the sapphire substrate is peeled off, no residual glue is left on the red light LED chip, the display effect of the red light LED chip is guaranteed, and the chip quality is improved. In addition, the hole dispersion layer is processed in a patterning mode, and a channel for discharging nitrogen is formed in the hole dispersion layer, so that impact of gas generated when the sapphire substrate is stripped on a red light epitaxial layer is avoided, and the quality of a red light LED chip is guaranteed.
Meanwhile, as the nano silver wires are distributed in the hole dispersion layer, the holes can be better dispersed by using the low resistance performance of silver, and the hole aggregation phenomenon is avoided, so that the current distribution is more uniform, and the light emitting effect of the red light LED chip is improved. Naturally, a display panel prepared based on the red LED chip will also have a better display effect.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of a red LED chip is characterized by comprising the following steps:
arranging a hole dispersion layer containing nano metal wires on a red light epitaxial layer of a growth substrate, wherein the nano metal wires are dispersed in adhesive glue in the hole dispersion layer and at least uniformly spread on one side of the hole dispersion layer close to the red light epitaxial layer;
bonding the hole dispersion layer and the insulating substrate together by using a bonding layer and removing the growth substrate so as to transfer the red light epitaxial layer from the growth substrate to the insulating substrate;
electrodes which are respectively and electrically connected with the two semiconductor layers of the red light epitaxial layer are arranged;
decomposing the bonding layer to separate the hole dispersion layer from the insulating substrate.
2. The method of claim 1, wherein bonding the hole-dispersing layer and the insulating substrate together with a bonding layer comprises:
disposing a gallium nitride layer as a bonding layer on the insulating substrate;
one surface, far away from the insulating substrate, of the gallium nitride layer is close to the hole dispersion layer and is attached to the hole dispersion layer;
said decomposing said bonding layer comprises: and decomposing the gallium nitride layer by adopting laser.
3. The method for preparing a red LED chip according to claim 2, wherein the red epitaxial layer is used to form a plurality of red LED chips; before decomposing the bonding layer, the method further comprises:
and patterning the hole dispersion layers which can be used for forming a plurality of red LED chips to form a plurality of sub-hole dispersion layers, wherein each sub-hole dispersion layer is used for forming one red LED chip, and gaps exist among the sub-hole dispersion layers.
4. The method for preparing a red LED chip according to any one of claims 1 to 3, wherein the nano metal wire is a nano silver wire.
5. The method of any of claims 1-3, wherein disposing the hole-dispersing layer comprising the nano-metal wires on the red epitaxial layer disposed on the growth substrate comprises:
obtaining a hole dispersion layer;
and attaching the hole dispersion layer to the red light epitaxial layer, wherein nano metal wires are distributed on one side of the hole dispersion layer, which is in contact with the red light epitaxial layer.
6. A red LED chip, comprising:
a red light epitaxial layer;
a hole-dispersing layer; and the number of the first and second groups,
an electrode;
the red light epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged; the hole dispersion layer is arranged on the second semiconductor layer in an attaching mode, the hole dispersion layer comprises adhesive glue and nano metal wires dispersed in the adhesive glue, and the nano metal wires are at least uniformly distributed on one side, close to the red light epitaxial layer, of the hole dispersion layer; the electrodes include a first electrode and a second electrode, wherein the first electrode is connected to the first semiconductor layer, and the second electrode is connected to the hole dispersion layer.
7. The red LED chip of claim 6, wherein the nano-metal wires are nano-silver wires.
8. The red LED chip of claim 6, wherein the adhesive glue is an acrylic resin.
9. The red LED chip of any one of claims 6-8, wherein nanowires are distributed only on a side of the hole-dispersing layer adjacent to the red epitaxial layer.
10. A display panel, comprising a driving circuit board and a plurality of red LED chips according to any one of claims 6 to 9, wherein electrodes of the red LED chips are electrically connected to the driving circuit board.
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