TWI688020B - 形成導電接觸結構至半導體裝置之方法及所產生的結構 - Google Patents
形成導電接觸結構至半導體裝置之方法及所產生的結構 Download PDFInfo
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Abstract
揭示於本文之一種例示方法可包括:形成接觸蝕刻結構於位在第一及第二下導電結構之上的一層絕緣材料中,其中該接觸蝕刻結構的至少一部分橫向位在該第一及該第二下導電結構之間,形成鄰近該接觸蝕刻結構之第一側的第一導電線路及第一導電接觸以及形成鄰近該接觸蝕刻結構之第二側的第二導電線路及第二導電接觸,其中該第一及該第二導電線路之間的間隔大約等於該接觸蝕刻結構的一尺寸。
Description
本揭示內容大致有關於半導體裝置的製造,且尤係關於形成導電接觸結構至半導體裝置的各種新穎方法及所產生的新穎結構。
現代積體電路(IC)產品包括:形成於面積很小之半導體基板或晶片上的大量主動及被動半導體裝置(亦即,電路元件)。例如,主動半導體裝置包括各種類型的電晶體,例如場效電晶體(FET)、雙極電晶體等等。被動半導體裝置的例子包括電容器、電阻器等等。這些半導體裝置配置成為IC產品之各種功能組件之一部分的各種電路,例如,微處理器(邏輯區)、記憶體陣列(記憶體區)、ASIC等等。如同所有電子裝置,IC產品中的半導體裝置需要通過佈線電氣連接使得它們可按設計運作。在IC產品中,完成此類佈線係通過形成於半導體基板之上的多個金屬化層。
通常,由於大量的半導體裝置(亦即,電路元件)以及現代積體電路的必要複雜佈局,所以在有半導體裝置製造於其上的相同裝置層級內無法建立個別半導體裝置的電氣連接或“佈線排列”。因此,構成IC產品之整體佈線圖案的各種電氣連接被形成於金屬化系統中,其包含形成於產品之裝置層級之上的一或更多附加堆疊的所謂的“金屬化層”。這些金屬化層通常由數層絕緣材料構成,以及在該等絕緣材料層中形成導電金屬線路或導電通孔。一般而言,導電線路提供層內(intra-level)電氣連接,同時導電通孔在導電線路的不同層級之間提供層間(inter-level)連接或垂直連接。這些導電線路及導電通孔可由各種不同材料構成,例如銅、鎢、鋁等等(以及適當的阻障層)。積體電路產品中的第一金屬化層通常被稱為“M1”層。通常,複數個導電通孔(通常被稱為“V0”通孔)用來在M1層與較低層級導電結構(所謂的裝置層級接觸(以下會有更完整的解釋))之間建立電氣連接。在有些更先進的裝置中,在裝置層級接觸與V0通孔之間形成由導電線路(有時稱為“M0”層)構成的另一金屬化層。
第1圖的橫截面圖圖示由形成於半導體基板12中及之上之電晶體裝置11構成的例示IC產品10。也圖示複數個所謂的“CA接觸”結構14用於建立電氣連接至裝置11的示意圖示源極/汲極區20,以及有時被稱為“CB接觸”結構的閘極接觸結構16。如第1圖所示,CB閘極接觸16通常垂直位在包圍裝置11的隔離材料13之上,亦即, CB閘極接觸16通常不位在界定基板12中的主動區之上,但是在有些先進架構中可能會如此。
電晶體11包含例示閘極結構22,亦即,閘極絕緣層22A與閘極電極22B,閘極帽蓋24,側壁間隔體26及示意圖示源極/汲極區20。如上述,在製程流程的這一點,隔離區13也已形成於基板12中。在圖示於第1圖的製造點,數層絕緣材料30A、30B,亦即,層間介電質材料,已形成於基板12之上。其他數層材料未圖示於附圖,例如接觸蝕刻止擋層及其類似者。也圖示例示突起磊晶源極/汲極區32與源極/汲極接觸結構34,其通常包括所謂的“溝槽矽化物”(TS)結構36。CA接觸結構14的形式可為離散的接觸元件,亦即,在從上面觀看時有大致像方形之形狀或圓柱形形狀的一或更多個別接觸插塞(contact plug),其係形成於層間介電質材料中。在其他的應用中,CA接觸結構14也可為接觸底下線路型特徵的線路型特徵,例如,接觸源極/汲極區20的TS結構36,且通常在與電晶體11之閘極寬度方向平行的方向延伸越過源極/汲極區20上的整個主動區,亦即,進出第1圖之圖紙的平面。CA接觸14與CB接觸16在工業內都被視為裝置層級接觸。
第1圖圖示IC產品10的例示例子,其包括產品10之多層級金屬化系統的所謂M0金屬化層。該M0金屬化層形成於一層絕緣材料46中,例如,低k絕緣材料,且被形成為可建立電氣連接至裝置層級接觸-CA接觸14與CB接觸16。第1圖也圖示產品10的所謂M1金 屬化層,其形成於一層絕緣材料38中,例如,低k絕緣材料。提供所謂V0通孔40的複數個導電通孔以在M0金屬化層與M1金屬化層之間建立電氣連接。M0金屬化層及M1金屬化層兩者通常(各自)包括按需要路由越過產品10的複數條金屬線路44、42。M0金屬化層的形成有助於減少形成於基板12上之電路的總電阻。不過,在有些IC產品中,可省略MO金屬化層且使M1金屬化層的V0通孔40與CA接觸14及CB接觸16接觸。
通常藉由在相關絕緣材料層中形成實質越過整個基板的長連續溝槽而形成金屬化線路(例如,線路44、42)。之後,這些金屬化溝槽填滿一或更多導電材料且執行一或更多化學機械研磨(CMP)製程以移除在溝槽外的多餘導電材料。在典型製程流程的此時,淨結果是金屬化線路為延伸越過整個基板的相對長連續結構。最終,必須移除或“切掉”部分的連續金屬化線路以建立積體電路的功能佈線圖案,亦即,單一連續金屬化線路可切成數個互相電氣隔離的較小片段,使得這些個別的、小的“切斷後”片段各自可被金屬化系統的其他組件接觸。不過,把這些連續金屬化線路切成較小片段可能會是挑戰性高又費時的製程,會造成加工失誤且對產品產出有不利的影響。
形成用於IC產品的各種電晶體裝置必須互相電氣隔離以在電路中正確地運轉。通常,這是藉由在基板12中形成溝槽,且用例如二氧化矽的絕緣材料填滿溝槽來實現。在產業內,這些隔離區有時可稱為“擴散阻斷 (diffusion break)”。第2圖的簡化平面圖圖示IC產品10的一部分,其中例示單一擴散阻斷(SDB)結構50使IC產品的兩個例示電路結構52及54沿著直線56互相分離。在一實施例中,區段52可為NAND2電路結構,同時區段54可為MUX電路結構。也圖示於第2圖的是由閘極帽蓋24與在電晶體裝置之源極/汲極區的溝槽矽化物區36構成的複數個電晶體結構。各種金屬線路60也圖示於第2圖。
如圓圈區70所示,已形成CA接觸結構14(以虛線圖示)用來建立電氣連接至電晶體在SDB 50之相對兩側的源極/汲極區。為了做成金屬線路60與底下CA接觸結構14之間的連接,在各個金屬線路60的末端之間必須有尖端對尖端間隔(tip-to-tip spacing)72。這通常是藉由執行微影及蝕刻製程以在各個線路60的一層絕緣材料(未圖示)中界定分離的溝槽,之後在使用雙鑲嵌加工技術的同時形成CA接觸結構14及金屬線路60兩者來實現。在製作此類連接時的另一典型要求是金屬線路60的末端需要與CA接觸結構14重疊一段距離74以確保金屬線路60與CA接觸結構14之間有充分的接觸面積,致使整體接觸配置的電阻相對於設計過程所預期的不會增加。通常,在IC產品包括SDB隔離結構時,CA源極/汲極接觸結構14必須在對應至各種電晶體裝置之閘極結構之閘極間距的距離處被接觸,以充分利用所達成的空間節省。電晶體在現代IC產品上的閘極間距目前很小且預料會隨著未來開發的產品而進一步減小。可惜,如果現代電晶體裝置有 極小尺寸,半導體裝置在現代IC產品上的堆積密度增加,以及電晶體裝置在現代IC產品上的閘極間距極小且一直遞減的話,對於具有此一尖端對尖端配置之此類金屬線路60來直接圖案化溝槽會極具挑戰性。也圖示於第2圖中之圓圈區80的是形成接觸隔開的CB閘極接觸結構16(形成為可接觸不同電晶體裝置上之閘極結構)的金屬線路60。在接觸閘極接觸結構16的金屬線路60也以尖端對尖端組構配置時,在金屬線路60的末端之間在此組構下有更多間隔。儘管如此,形成相對於閘極接觸結構16有所欲尺寸及位置的這些線路60仍然是極具挑戰性的製程,如果沒有準確地完成,可能導致裝置失效。
本揭示內容針對形成導電接觸結構至半導體裝置的各種新穎方法以及所產生之新穎結構,這可避免或至少減少上述問題中之一或更多的影響。
以下提出本發明的簡化概要以提供本發明之一些方面的基本理解。此概要並非本發明的窮舉式總覽。它不是旨在識別本發明的關鍵或重要元件或者是描繪本發明的範疇。唯一的目的是要以簡要的形式提出一些概念作為以下更詳細之說明的前言。
大致上,本揭示內容針對形成導電接觸結構至半導體裝置之各種新穎方法及所產生之新穎結構。揭示於本文之一種例示方法可包括:在第一及第二下導電結構之上形成包含第一材料的一層絕緣材料,以及在該層絕 緣材料中形成接觸蝕刻結構,其中該接觸蝕刻結構包含與該第一材料不同的第二材料,且其中該接觸蝕刻結構的至少一部分橫向位在該第一下導電結構的至少一部分與該第二下導電結構的至少一部分之間。在此實施例中,該方法也包括:形成鄰近該接觸蝕刻結構之第一側的第一導電線路及第一導電接觸,其中該第一導電接觸導電地耦合至該第一下導電結構,以及形成鄰近該接觸蝕刻結構之第二側的第二導電線路及第二導電接觸,其中該第二導電接觸導電地耦合至該第二下導電結構,且其中該第一及該第二導電線路之間的間隔大約等於該接觸蝕刻結構的尺寸。
10‧‧‧例示IC產品
11‧‧‧裝置、電晶體
12、102‧‧‧半導體基板、基板
13‧‧‧隔離材料、隔離區
14‧‧‧CA接觸結構、CA接觸
16‧‧‧閘極接觸結構、CB閘極接觸、CB接觸
20‧‧‧源極/汲極區
22‧‧‧閘極結構
22A‧‧‧閘極絕緣層
22B‧‧‧閘極電極
24‧‧‧閘極帽蓋
26‧‧‧側壁間隔體
30A、30B、38、46‧‧‧絕緣材料層
32‧‧‧突起磊晶源極/汲極區
34‧‧‧源極/汲極接觸結構
36‧‧‧溝槽矽化物(TS)結構、TS結構、溝槽矽化物區
40‧‧‧V0通孔
42、44‧‧‧金屬線路、線路
50‧‧‧單一擴散阻斷(SDB)結構、SDB
52、54‧‧‧電路結構、區段
56‧‧‧直線
60‧‧‧金屬線路、線路
70、80‧‧‧圓圈區
72‧‧‧尖端對尖端間隔
74‧‧‧距離
100‧‧‧積體電路(IC)產品、產品
103‧‧‧鰭片、主動區
104‧‧‧隔離材料
106‧‧‧閘極
108‧‧‧閘極結構
110‧‧‧閘極帽蓋
112‧‧‧側壁間隔體、間隔體
116‧‧‧磊晶半導體材料、磊晶材料
120‧‧‧源極/汲極接觸結構
121‧‧‧絕緣材料層、絕緣材料
122‧‧‧另一層絕緣材料
122X‧‧‧厚度
124‧‧‧下閘極接觸結構
130‧‧‧CA接觸結構、CA接觸
130A、130B‧‧‧CA接觸
132‧‧‧CB閘極接觸結構
132A、132B‧‧‧CB接觸
134、136‧‧‧開口
138‧‧‧毯覆蝕刻遮罩、蝕刻遮罩
140‧‧‧溝槽
142‧‧‧單一擴散阻斷(SDB)隔離結構、SDB隔離結構、SDB結構
143‧‧‧閘極接觸蝕刻椿或柱
145‧‧‧CA接觸開口
147‧‧‧CB接觸開口
150、150A、150B‧‧‧CA源極/汲極接觸開口、開口
150X‧‧‧間隔
152、152A、152B‧‧‧CB閘極接觸開口、開口
154A、154B、155A、155B‧‧‧金屬線路溝槽
154X‧‧‧尖端對尖端間隔、間隔
154、155‧‧‧溝槽、開口
156、160‧‧‧金屬線路、線路
156A、156B、160A、160B‧‧‧金屬線路、線路
157‧‧‧第一矩形開口、開口
159‧‧‧第二連續大致矩形開口、開口
168‧‧‧氣隙
170‧‧‧材料
180‧‧‧接觸蝕刻結構、閘極接觸蝕刻結構
180A‧‧‧垂直高度
180B‧‧‧底面
181、182、183、184‧‧‧上表面
參考以下結合附圖的說明可明白本揭示內容,其中類似的元件以相同的元件符號表示,且其中:第1圖及第2圖圖示用於積體電路產品之裝置層級接觸及金屬化層的各種例示先前技術配置;以及第3圖至第12圖圖示揭示於本文用於形成導電接觸結構至半導體裝置之各種新穎方法以及所產生之新穎裝置結構。
儘管揭示於本文的專利標的容易做成各種修改及替代形式,然而本文仍以附圖為例圖示本發明的幾個特定具體實施例且詳述於本文。不過,應瞭解本文所描述的特定具體實施例並非旨在把本發明限定為本文所揭示的特定形式,反而是,本發明應涵蓋落在如隨附申請專利範圍所界定之本發明精神及範疇內的所有修改、等價及替 代性陳述。
以下描述本發明的各種示意具體實施例。為了清楚說明,本專利說明書沒有描述實際具體實作的所有特徵。當然,應瞭解,在開發任一此類的實際具體實施例時,必需做許多與具體實作有關的決策以達成開發人員的特定目標,例如遵循與系統相關及商務有關的限制,這些都會隨著每一個具體實作而有所不同。此外,應瞭解,此類開發既複雜又花時間但對本技藝一般技術人員而言,在閱讀本揭示內容後仍將如例行工作一般。
此時以參照附圖來描述本發明。示意圖示於附圖的各種結構、系統及裝置係僅供解釋以及避免熟諳此藝者所習知的細節混淆本發明。儘管如此,仍納入附圖以描述及解釋本揭示內容的示意實施例。應使用與相關技藝技術人員所熟悉之意思一致的方式理解及解釋用於本文的字彙及片語。本文沒有特別定義的術語或片語(亦即,與熟諳此藝者所理解之普通慣用意思不同的定義)旨在用術語或片語的一致用法來說明。如果術語或片語旨在具有特定的意思時(亦即,不同於熟諳此藝者所理解的意思),則會在本專利說明書中以直接明白地提供特定定義的方式清楚地陳述用於該術語或片語的特定定義。
本揭示內容大致有關於形成導電接觸結構至半導體裝置之各種新穎方法及所產生之新穎結構。揭示於本文之方法及裝置使用各種技術可用來製造IC產品,例 如NMOS、PMOS、CMOS等等,且可用來製造各種不同的產品,例如記憶體產品、邏輯產品、ASIC等等。熟諳此藝者在讀完本申請案後應瞭解,揭示於本文之方法及裝置可用於形成使用處於各種不同組構之電晶體裝置的積體電路產品,例如平面裝置、FinFET裝置等等。電晶體裝置的閘極結構可用“閘極優先(gate first)”或者是“取代閘極(replacement gate)”製造技術。因此,揭示於本文之專利標的應不被視為受限於電晶體的任何特定形式或形成電晶體裝置之閘極結構的方式。當然,揭示於本文的發明應不被視為受限於圖示及描述於本文的例示實施例。此時參考附圖,更詳細地描述揭示於本文之方法及裝置的各種例示具體實施例。
第3圖至第12圖圖示形成導電接觸結構至在積體電路(IC)產品100上之半導體裝置的各種新穎方法及所產生之新穎結構。熟諳此藝者在讀完本申請案後應瞭解,揭示於本文之新穎的接觸蝕刻結構180可用來形成導電地耦合至建立於積體電路產品上之各種不同結構的各種不同導電接觸結構。本申請案特別討論揭示於本文之新穎的閘極接觸蝕刻結構180的兩個例示實施例:單一擴散阻斷(SDB)隔離結構142與閘極接觸蝕刻椿(gate contact etching post)143。當然,揭示於本文之本發明應不被視為受限於這兩個例示實施例。
第3圖的簡化平面圖圖示IC產品100的一例示具體實施例。產品100大體包含用於形成於半導體基 板102中及之上之各種電晶體裝置的複數個閘極106(以1至6編號以便參考)。在圖示於此之例示實施例中,該等電晶體裝置為FinFET裝置,但是揭示於本文之本發明應不被視為受限於包括FinFET電晶體裝置的IC產品。複數個鰭片103已使用傳統製造技術形成於基板102中,且已形成橫過鰭片103的閘極106。也圖示於該平面圖的是導電地耦合至電晶體裝置之源極/汲極區的例示源極/汲極接觸結構120(例如,溝槽矽化物結構)。如以下所詳述的,將通過3號閘極來形成單一擴散阻斷(SDB)。該平面圖也圖示(以虛線)將形成為可接觸在將變成SDB隔離區者之相對兩側上之源極/汲極區的CA接觸結構130。也圖示於第3圖平面圖的是(以虛線),將形成CB閘極接觸結構132以接觸4號及5號閘極之閘極結構108的位置。
圖中也包括在按平面圖所示處繪出的兩個橫截面圖(“X-X”及“Y-Y”)。更特別的是,橫截面圖X-X是在將形成CA接觸結構130之位置處沿著電晶體裝置之閘極-長度方向穿過閘極106繪出。在電晶體裝置為FinFET裝置的情形下,視圖X-X應理解為橫截面圖是沿著對應至FinFET裝置之閘極長度(電流輸送)方向的方向穿過電晶體的鰭片長軸繪出。橫截面圖Y-Y是在將形成CB閘極接觸結構132之位置處沿著電晶體裝置之閘極-長度方向穿過閘極106繪出。CB閘極接觸結構132位在隔離材料104的垂直上方。應注意,相關平面圖沒有反映圖示於橫截面圖X-X及Y-Y之加工操作的所有方面以免使圖形過於複雜 且有助於更加了解揭示於本文之專利標的。
基板102可具有各種組構,例如圖示塊矽組構。基板102也可具有絕緣體上覆矽(SOI)組構,其包括塊矽層、埋藏絕緣層及主動層,其中半導體裝置係形成於主動層中及之上。基板102可由矽製成或可由除矽以外的材料製成。因此,應瞭解用語“基板”或“半導體基板”涵蓋所有半導體材料及此類材料的所有形式。另外,附圖未圖示各種摻雜區,例如,暈圈植入區、井區及其類似者。
第3圖圖示在執行數個製程操作之後的IC產品100。首先,如上述,形成鰭片103,以及形成在鰭片103之上的閘極106。在圖示於此之例示實施例中,電晶體裝置的閘極106包含使用習知取代閘極製造技術製成的閘極結構108。每個閘極106包括示意圖示的最終閘極結構108、閘極帽蓋110及側壁間隔體112。側壁間隔體112與閘極帽蓋110可由各種不同材料構成,例如氮化矽、SiNC、SiN、SiCO及SiNOC等等,且可由相同或不同的材料製成。通常,閘極結構108的材料是依序形成於在移除犧牲閘極電極(未圖示)後之間隔體112與犧牲閘極絕緣層(未圖示)之間的閘極空腔中。閘極結構108通常包含高k閘極絕緣層(未圖示),例如氧化鉿,電介質常數大於10的材料等等,以及用作閘極結構108之閘極電極的一或更多導電材料層。例如,可沉積一或更多功函數調整金屬層及塊狀導電材料以形成該閘極電極結構。
仍參考第3圖,在形成最終閘極結構108 之前,藉由執行磊晶成長製程,在主動區103(或在FinFET裝置的情形下,為鰭片)的暴露部分上形成磊晶半導體材料116,亦即,在裝置的源極/汲極區中。磊晶材料116可形成至任何所欲厚度。不過,應瞭解,所有應用中不一定會形成磊晶材料116。附圖沒有圖示其他的材料層,例如接觸蝕刻止擋層及其類似者。也圖示通常包括所謂“溝槽矽化物”(TS)結構(未單獨圖示)的例示源極/汲極接觸結構120。如圖示,源極/汲極接觸結構120的上表面通常與閘極帽蓋110的上表面大約齊平。
在形成磊晶材料116後,毯覆沉積一層絕緣材料121(例如,二氧化矽)於基板上。之後,使用位於犧牲閘極結構上方作為研磨止擋層(polish stop layer)的原始閘極帽蓋(未圖示),執行CMP製程以平坦化該層絕緣材料121。這時,執行傳統取代閘極製程以移除原始閘極帽蓋及犧牲閘極結構而形成最終閘極結構108。這時,在產品100上形成閘極帽蓋110。接下來,移除絕緣材料121高出源極/汲極區的部分且在裝置的源極/汲極區中形成上述的源極/汲極接觸結構120。
也圖示於第3圖的是例示下閘極接觸結構124,其經形成可建立通到4號及5號閘極之閘極結構108的電氣接觸。第3圖的平面圖未圖示下閘極接觸結構124。下閘極接觸結構124的形成可藉由形成在閘極帽蓋110之上的帶圖案蝕刻遮罩層(未圖示),其選擇性地暴露出閘極帽蓋110用於4號及5號閘極的部分,在此將形成下閘極 接觸結構124。之後,執行蝕刻製程以移除閘極帽蓋110的暴露部分以便暴露用於4號及5號閘極之閘極結構108的一部分。這時,移除該帶圖案蝕刻遮罩且沉積一或更多導電材料以便接觸閘極結構108的暴露部分。之後,使用閘極帽蓋110與該層絕緣材料121作為研磨止擋層,執行CMP製程以移除多餘導電材料。之後,毯覆沉積另一層絕緣材料122(例如,二氧化矽)於產品100上。若需要,在該層絕緣材料122的上表面上可執行視需要的CMP製程。應注意,圖示於此的平面圖不打算圖示該層絕緣材料122或121以免使圖形過於複雜。熟諳此藝者在讀完本申請案後應瞭解,在一例示具體實施例中,該層絕緣材料122的厚度122X大到足以順應最終CA接觸結構130(及CB接觸結構132)的垂直高度以及形成用於產品100之金屬化系統的第一或最下面金屬線路層(例如,M0或M1)的垂直厚度。
第4圖圖示在開口134及136形成於該層絕緣材料122中之後的IC產品100。開口134及136的形成係藉由在產品100之上形成帶圖案蝕刻遮罩層(未圖示),例如光阻劑、OPL等等,之後,通過該帶圖案蝕刻遮罩層來執行一或更多蝕刻製程。第4圖圖示在帶圖案遮罩層已被移除之後的產品100。開口134的位置對應至將通過3號閘極之閘極結構108來形成的SBD隔離區,以下會有更完整的描述。開口136的位置對應至將形成閘極接觸蝕刻椿或柱,以及兩個緊密間隔(密集包裝)的閘極接觸,以下會有更完整的描述。
第5圖圖示在形成毯覆蝕刻遮罩138(亦即,區塊遮罩)於產品100之上後的產品100。如圖示,蝕刻遮罩138填滿開口136但是讓開口134暴露供進一步加工操作。
第6圖圖示在通過該層絕緣材料122之開口134來執行一或更多蝕刻製程以便在基板102中界定溝槽140之後的產品100。如圖示,這些蝕刻製程移除閘極帽蓋110的一部分及3號閘極的實質所有閘極結構108以及基板102的數個部分。在這些蝕刻製程結束時,在基板102中界定溝槽140。溝槽140的深度可隨著特定應用而有所不同,但是應形成夠深的溝槽140致使形成於其中的絕緣材料可用作有效的SDB隔離區。
第7圖圖示在執行數個製程操作之後的產品100。首先,移除蝕刻遮罩138。之後,沉積絕緣材料,例如氮化矽、SiNC、SiN、SiCO及SiNOC等等或SiN與SiO2之組合等等,以便過填(over-fill)開口134及136而實質填滿溝槽140。接下來,執行CMP或回蝕製程以移除位於該層絕緣材料122上表面之上多餘數量的絕緣材料。這些製程操作導致形成在溝槽140中的SDB隔離結構142與在開口136中的開口134及閘極接觸蝕刻椿或柱143。應注意,SDB隔離結構142及閘極接觸蝕刻椿或柱143的上表面與該層絕緣材料122的上表面實質齊平。
第8圖圖示在執行數個製程操作之後的產品100。首先,在產品100之上形成帶圖案蝕刻遮罩(未圖 示)。如第8圖的平面圖所示,該帶圖案蝕刻遮罩包含CA接觸開口145與CB接觸開口147。CA接觸開口145位於源極/汲極接觸結構120在SDB隔離結構142之相對兩側的部分之上,在此將形成CA接觸結構130。CA接觸開口145也暴露SBD隔離結構142的一部分。CB接觸開口147位在形成於4號及5號閘極上的下閘極接觸結構124之上。CB接觸開口147也暴露閘極接觸蝕刻椿或柱143。接下來,通過該帶圖案蝕刻遮罩來執行一或更多蝕刻製程以對SDB隔離結構142及閘極接觸蝕刻椿或柱143選擇性地移除絕緣材料122的暴露部分。此蝕刻製程導致形成複數個CA源極/汲極接觸開口150A、150B(參考視圖X-X;全體用元件符號150表示)及複數個CB閘極接觸開口152A、152B(參考視圖Y-Y;全體用元件符號152表示)。CA源極/汲極接觸開口150暴露源極/汲極接觸結構120在SDB隔離結構142之相對兩側的底下部分。CB閘極接觸開口152暴露下閘極接觸結構124導電地耦合至4號及5號閘極之閘極結構108的部分。之後,移除該帶圖案蝕刻遮罩。應注意,在有些應用中,可能不存在下閘極接觸結構124。在此一情形下,CB閘極接觸開口152會暴露出個別電晶體裝置之導電閘極結構的數個部分。
應注意,由於存在有SDB隔離結構142,所以開口150的一邊會自對準於SDB隔離結構142,亦即,開口150之間的間隔150X的建立係藉由相對於SDB隔離結構142選擇性蝕刻來實現,而不是簡單地圖案化該層絕 緣材料122。相較於企圖使用傳統遮罩及蝕刻製程直接圖案化開口150而在該層絕緣材料122中簡單地形成對應類型的開口150,用於界定間隔150X的此技術可提供更大的製程控制。同樣,由於存在有閘極接觸蝕刻椿或柱143,開口152的一邊自對準於閘極接觸蝕刻椿或柱143,亦即,開口152之間的間隔152X的建立係藉由相對於閘極接觸蝕刻椿或柱143選擇性蝕刻來實現,而不是簡單地圖案化該層絕緣材料122。相較於企圖使用傳統遮罩及蝕刻製程直接圖案化開口152而在該層絕緣材料122中簡單地形成對應類型的開口152,界定間隔152X的此技術可提供更大的製程控制。
第9圖圖示在執行數個製程操作之後的產品100。首先,在產品之上形成帶圖案蝕刻遮罩(未圖示)以便在該層絕緣材料122中界定複數條金屬線路溝槽。如第9圖的平面圖所示,該帶圖案蝕刻遮罩包含至少連續有一段距離的第一矩形開口157,在此開口157橫跨位在SDB隔離結構142(可能是2、3及4號閘極)及第二連續大致矩形開口159之相對兩側的CA源極/汲極接觸開口150。在圖示實施例中,開口157位在2至6號閘極之上,在位於SDB隔離結構142之相對兩側的CA源極/汲極接觸開口150之上,且暴露出SDB隔離結構142的一部分。在圖示實施例中,開口159位在1至6號的所有閘極之上,在CB接觸開口152之上,且暴露出閘極接觸蝕刻椿或柱143。接下來,通過該帶圖案蝕刻遮罩來執行一或更多蝕刻製程 以對SDB隔離結構142及閘極接觸蝕刻椿或柱143選擇性地移除絕緣材料122的暴露部分。此蝕刻製程導致在SDB隔離結構142之相對兩側的開口157下面形成金屬線路溝槽154A及154B(全體用元件符號154表示),以及在在閘極接觸蝕刻椿或柱143之相對兩側的開口159下面形成金屬線路溝槽155A及155B(全體用元件符號155表示)。參考視圖X-X,金屬線路溝槽154A與暴露底下源極/汲極接觸結構120的CA源極/汲極接觸開口150A連通,同時金屬線路溝槽154B與暴露底下源極/汲極接觸結構120的CA源極/汲極接觸開口150B連通。同樣,參考視圖Y-Y,金屬線路溝槽155A與暴露在4號閘極上之底下下閘極接觸結構124的CB閘極接觸開口152A連通,同時金屬線路溝槽155B與暴露在5號閘極上之底下下閘極接觸結構124的CB閘極接觸開口152B連通。
繼續參考第9圖,由於存在有SDB隔離結構142,所以每個溝槽154的一邊自對準於SDB隔離結構142,亦即,溝槽154A及154B之間的尖端對尖端間隔154X的建立係藉由相對於SDB隔離結構142選擇性蝕刻來實現,而不是簡單地圖案化該層絕緣材料122中的對應溝槽。相較於企圖使用傳統遮罩及蝕刻製程直接圖案化開口150而在該層絕緣材料122中簡單地形成對應的個別溝槽154A、154B,用於界定間隔154X的此技術可提供更大的製程控制。同樣,由於存在有閘極接觸蝕刻椿或柱143,所以每個溝槽155的一邊自對準於閘極接觸蝕刻椿或柱143,亦即,溝槽155A及155B之間的尖端對尖端間隔155X的建立係藉由相對於閘極接觸蝕刻椿或柱143選擇性蝕刻來實現,而不是簡單地圖案化該層絕緣材料122。相較於企圖使用傳統遮罩及蝕刻製程直接圖案化獨立溝槽155A、155B而在該層絕緣材料122中簡單地形成對應的個別溝槽155A、155B,用於界定間隔155X的此技術可提供更大的製程控制。
第10圖圖示在執行數個製程操作以形成CA接觸130、CB接觸132及金屬線路156、160之後的產品100。首先,形成一或更多共形阻障層(未單獨圖示)以便用阻障材料對開口150、152、154及155予以襯墊。接下來,毯覆沉積一層導電材料(例如銅、含金屬材料、金屬化合物等等)於產品100上以便過填開口150、152、154及155。這時,執行CMP製程以從該層絕緣材料122、SDB隔離結構142及閘極接觸蝕刻椿或柱143的上表面移除導電材料的多餘部分。這些製程操作導致形成開口150A中的CA接觸130A、開口150B中的CA接觸130B、開口152A中的CB接觸132A以及開口152B中的CB接觸132B。這些製程操作也導致形成複數個實體獨立的金屬線路156A、156B、160A及160B,這些金屬線路係藉由沉積及研磨來實現,而不是切割先前形成的連續金屬線路。金屬線路156A導電地耦合至CA接觸130A,金屬線路156B導電地耦合至CA接觸130B,金屬線路160A導電地耦合至CB接觸132A,以及金屬線路160B導電地耦合至CB接觸132B。應注意,在一例示具體實施例中,金屬線路156及160的上表面與SDB隔離結構142、閘極接觸蝕刻椿或柱143及位在金屬線路之間的絕緣材料122(絕緣材料122未圖示於橫截面圖)的上表面實質齊平或共平面。應注意,在揭示於本文之IC產品中,SDB隔離結構142明顯高於先前技術的SDB隔離結構。亦即,相較於先前技術產品,SDB結構142之上表面所在的層級明顯高於其他結構(例如閘極帽蓋110)之上表面的層級。
熟諳此藝者在讀完本申請案後應瞭解,揭示於本文之方法為裝置設計者在製造積體電路產品時提供數個額外選項。例如,第11圖圖示故意在沉積於溝槽140內之絕緣材料中形成氣隙168的具體實施例。此一氣隙168的形成可藉由增加其電介質常數來增加SDB結構142的有效性。氣隙168可藉由控制絕緣材料的沉積來形成,使得在溝槽140內有“夾止(pinch off)”且不會完全填滿溝槽140。第12圖圖示溝槽140及在其上之開口可填滿不同絕緣材料的另一具體實施例。例如,相較於用於SDB隔離結構142上半部之材料的k值,溝槽140的下半部可填滿有相對較低k值的材料170(例如,有3.3或更小之k值的材料)。
熟諳此藝者在讀完本申請案後應瞭解,除揭露及描述於本文的例示實施例之外,SDB結構142與閘極接觸蝕刻椿143只構成揭示於本文之新穎的接觸蝕刻結構180的兩個實施例,它們在各種情況中可用來形成導電接觸結構。例如,在一具體實施例中,揭示於本文之方法 可包括:形成第一及第二下導電結構(例如,源極/汲極接觸結構120或下閘極接觸結構124(若有的話)),以及形成由第一材料製成的一層絕緣材料(例如,層122)於第一及第二下導電結構之上。之後,該方法可包括:形成接觸蝕刻結構180於該層絕緣材料中,其中接觸蝕刻結構180由與該第一材料不同的第二材料製成。也應注意,接觸蝕刻結構180的至少一部分橫向位在第一下導電結構的至少一部分與第二下導電結構的至少一部分之間。在接觸蝕刻結構180為SDB結構142的情形下,接觸蝕刻結構180可位在源極/汲極接觸結構120的整體之間(在裝置的垂直方向及閘極寬度方向兩者)。該方法也可包括:形成鄰近接觸蝕刻結構180之第一側的第一導電線路及第一導電接觸,其中該第一導電接觸導電地耦合至該第一下導電結構。在接觸蝕刻結構180為SDB結構142的情形下,該第一導電接觸可為導電地耦合至源極/汲極接觸結構120之其中一者的CA接觸。在接觸蝕刻結構180為閘極接觸蝕刻椿143的情形下,該第一導電接觸可為導電地耦合至下閘極接觸結構124之其中一者(或閘極結構)的CB閘極接觸。該方法也可包括:形成鄰近該接觸蝕刻結構之第二側的第二導電線路及第二導電接觸,該接觸蝕刻結構的第二側與該接觸蝕刻結構的第一側相反,其中該第二導電接觸導電地耦合至該第二下導電結構,以及其中該第一及第二導電線路的間隔大約等於接觸蝕刻結構180的尺寸。
參考第10圖,新穎的接觸蝕刻結構180也 呈現數個新穎結構。例如,在至少一些應用中,該第一導電線路(例如,線路156A或160A)的至少一部分可位在接觸蝕刻結構180的第一側上且與其接觸,同時該第二導電線路(例如,線路156B或160B)的至少一部分位在接觸蝕刻結構180的第二側上且與其接觸。也應注意,接觸蝕刻結構180可具有取決於特定應用而有所不同的垂直高度180A。在一實施例中,垂直高度180A可大於該層絕緣材料122的厚度122X。也應注意,在有些情形下,可形成該第一導電線路、該第二導電線路及接觸蝕刻結構180,使得該第一導電線路的上表面181、該第二導電線路的上表面182以及接觸蝕刻結構180的上表面183全都大約位於在半導體基板之上的同一個第一層級。甚至在其他情況中,該層絕緣材料122的上表面184位在第一層級。如視圖X-X所示,在有些應用中,接觸蝕刻結構180可延伸進入形成於半導體基板102中的溝槽140。參考視圖Y-Y,在有些應用中,接觸蝕刻結構180的一部分可位在第一及第二下導電結構(例如,下閘極接觸結構124)中之各者的表面上且與其接觸。仍參考視圖Y-Y,在其他的應用中,接觸蝕刻結構180的底面180B可位於在第一及第二下導電結構之間的一層絕緣材料121上且與其接觸。當然,在審查完本申請案後,熟諳此藝者會明白,除以上所提及的以外,仍有更獨特的結構及方法。
以上所揭示的特定具體實施例均僅供圖解說明,因為熟諳此藝者在受益於本文的教導後顯然可以不 同但等價的方式來修改及實施本發明。例如,可用不同的順序完成以上所提出的製程步驟。此外,除非在以下申請專利範圍有提及,否則不希望本發明受限於本文所示之構造或設計的細節。因此,顯然可改變或修改以上所揭示的特定具體實施例,而所有此類變體都被視為仍在本發明的範疇與精神內。應注意,在本專利說明書及隨附申請專利範圍中為了描述各種製程或結構而使用的例如“第一”、“第二”、“第三”或“第四”用語只是用來作為該等步驟/結構的簡寫參考,不一定暗示是以該順序執行/形成該等步驟/結構。當然,取決於確切的申請專利範圍語言,可能需要或不需要該等製程的順序。因此,本文提出以下的申請專利範圍尋求保護。
102‧‧‧半導體基板、基板
103‧‧‧鰭片、主動區
104‧‧‧隔離材料
108‧‧‧閘極結構
110‧‧‧閘極帽蓋
116‧‧‧磊晶半導體材料、磊晶材料
120‧‧‧源極/汲極接觸結構
121‧‧‧絕緣材料層、絕緣材料
122‧‧‧另一層絕緣材料
122X‧‧‧厚度
124‧‧‧下閘極接觸結構
130A、130B‧‧‧CA接觸
132A、132B‧‧‧CB接觸
140‧‧‧溝槽
142‧‧‧單一擴散阻斷(SDB)隔離結構、SDB隔離結構、SDB結構
143‧‧‧閘極接觸蝕刻椿或柱
150A、150B‧‧‧CA源極/汲極接觸開口、開口
150X‧‧‧間隔
152A、152B‧‧‧CB閘極接觸開口、開口
156A、156B、160A、160B‧‧‧金屬線路、線路
180‧‧‧接觸蝕刻結構、閘極接觸蝕刻結構
180A‧‧‧垂直高度
180B‧‧‧底面
181、182、183、184‧‧‧上表面
Claims (24)
- 一種製造半導體裝置之方法,該方法包含:形成第一下導電結構及第二下導電結構;在該第一下導電結構及該第二下導電結構之上形成包含第一材料的一層絕緣材料;在該層絕緣材料中形成接觸蝕刻結構,其中,該接觸蝕刻結構包含與該第一材料不同的第二材料,且其中,該接觸蝕刻結構的至少一部分橫向位在該第一下導電結構的至少一部分與該第二下導電結構的至少一部分之間;形成鄰近該接觸蝕刻結構之第一側的第一導電線路及第一導電接觸,其中,該第一導電接觸導電地耦合至該第一下導電結構;以及形成鄰近該接觸蝕刻結構之第二側的第二導電線路及第二導電接觸,該接觸蝕刻結構之該第二側與該接觸蝕刻結構之該第一側相反,其中,該第二導電接觸導電地耦合至該第二下導電結構,且其中,該第一導電線路與該第二導電線路之間的間隔大約等於該接觸蝕刻結構的尺寸。
- 如申請專利範圍第1項所述之方法,其中,該第一導電線路的至少一部分位在該接觸蝕刻結構之該第一側上且與該接觸蝕刻結構之該第一側接觸,以及該第二導電線路的至少一部分位在該接觸蝕刻結構之該第二側上且與該接觸蝕刻結構之該第二側接觸。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構具有大於該層絕緣材料之厚度的垂直高度。
- 如申請專利範圍第1項所述之方法,其中,該第一導電線路的一邊與該第二導電線路的一邊各自自對準於該接觸蝕刻結構。
- 如申請專利範圍第1項所述之方法,其中,形成該第一導電線路、該第二導電線路及該接觸蝕刻結構,使得該第一導電線路的上表面、該第二導電線路的上表面及該接觸蝕刻結構的上表面全都大約位於在半導體基板之上的同一個第一層級。
- 如申請專利範圍第5項所述之方法,其中,該層絕緣材料具有位在該第一層級的上表面。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構的一部分延伸進入形成於半導體基板中的溝槽。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構位在該第一下導電結構的整體與該第二下導電結構的整體之間。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構為通過積體電路產品之第一閘極來形成的單一擴散阻斷(SDB)結構,該第一導電接觸為導電地耦合至鄰近該SDB結構之第一側之第一源極/汲極區的第一源極/汲極接觸,以及該第二導電接觸為導電地耦合至鄰近該SDB結構之第二側之第二源極/汲極區的第二源極/汲極接觸。
- 如申請專利範圍第9項所述之方法,其中,該第一源極/汲極區用於第一電晶體且該第二源極/汲極區用於與該第一電晶體不同的第二電晶體。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構的一部分位在該第一下導電結構及該第二下導電結構中之各者的表面上且與該表面接觸。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構的底面位於在該第一下導電結構及該第二下導電結構之間的第二層絕緣材料上且與該第二層絕緣材料接觸。
- 如申請專利範圍第1項所述之方法,其中,該接觸蝕刻結構為閘極接觸蝕刻椿,該第一導電接觸為導電地耦合至第一閘極之閘極結構之第一下閘極接觸結構的第一閘極接觸,以及該第二導電接觸為導電地耦合至第二閘極之閘極結構之第二下閘極接觸結構的第二閘極接觸。
- 一種製造半導體裝置之方法,該方法包含:通過積體電路產品之第一閘極來形成單一擴散阻斷(SDB)結構;以及形成第一導電線路及第一導電源極/汲極接觸於該SDB結構之第一側上且形成第二導電線路及第二導電源極/汲極接觸於該SDB結構的第二側上,該第二側與該第一側相反,其中,該第一導電源極/汲極接觸導電地耦合至位在該SDB結構之該第一側上的第一源極/汲極區,以及該第二導電源極/汲極接觸導電地耦合至位 在該SDB結構之該第二側上的第二源極/汲極區,其中,該第一導電線路及該第二導電線路的尖端對尖端間隔大約等於該SDB結構的尺寸。
- 如申請專利範圍第14項所述之方法,其中,該第一導電線路的一邊與該第二導電線路的一邊各自自對準於該SDB結構。
- 如申請專利範圍第14項所述之方法,其中,形成該第一導電線路、該第二導電線路及該SDB結構,使得該第一導電線路的上表面、該第二導電線路的上表面及該SDB結構的上表面全都大約位於在半導體基板之上的同一個第一層級。
- 如申請專利範圍第16項所述之方法,其中,該方法進一步包含:在該半導體基板之上形成一層絕緣材料,其中,該層絕緣材料具有位在該第一層級的上表面。
- 如申請專利範圍第16項所述之方法,其中,該SDB結構的一部分延伸進入形成於該半導體基板中的溝槽。
- 如申請專利範圍第18項所述之方法,其中,該SDB結構包含第一材料,以及該層絕緣材料包含與該第一材料不同的第二材料。
- 如申請專利範圍第14項所述之方法,其中,該方法進一步包含:形成一第一下閘極接觸結構及第二下閘極接觸結構,兩者各自通到第二閘極及第三閘極中之各者的閘極結構; 在該第二閘極及該第三閘極之上形成一層絕緣材料;在該層絕緣材料中形成閘極接觸蝕刻椿;以及形成第三導電線路及第一閘極接觸於該閘極接觸蝕刻椿的第一側上,以及形成第四導電線路及第二閘極接觸於該閘極接觸蝕刻椿的第二側上,該閘極接觸蝕刻椿的該第二側與該閘極接觸蝕刻椿的該第一側相反,其中,該第一閘極接觸導電地耦合至位在該閘極接觸蝕刻椿之該第一側上的該第一下閘極接觸結構,且該第二閘極接觸導電地耦合至位在,該閘極接觸蝕刻椿之該第二側上的該第二下閘極接觸結構,其中,該第三導電線路與該第四導電線路之間的尖端對尖端間隔大約等於該閘極接觸蝕刻椿的尺寸。
- 一種製造半導體裝置之方法,該方法包含:形成第一下閘極接觸結構及第二下閘極接觸結構,兩者各自通到第一閘極及第二閘極中之各者的閘極結構;在該第一及該第二閘極之上形成一層絕緣材料;在該層絕緣材料中形成閘極接觸蝕刻椿;以及形成第一導電線路及第一閘極接觸於該閘極接觸蝕刻椿的第一側上,以及形成第二導電線路及第二閘極接觸於該閘極接觸蝕刻椿的第二側上,該閘極接觸蝕刻椿之該第二側與該閘極接觸蝕刻椿之該第一側相反,其中,該第一閘極接觸導電地耦合至位在該閘極接 觸蝕刻椿之該第一側上的該第一下閘極接觸結構,以及該第二閘極接觸導電地耦合至位在該閘極接觸蝕刻椿之該第二側上的該第二下閘極接觸結構,其中,該第一導電線路與該第二導電線路之間的尖端對尖端間隔大約等於該閘極接觸蝕刻椿的尺寸。
- 如申請專利範圍第21項所述之方法,其中,該閘極接觸蝕刻椿包含第一材料,且該層絕緣材料包含與該第一材料不同的第二材料。
- 如申請專利範圍第21項所述之方法,其中,該第一導電線路的一邊與該第二導電線路的一邊各自自對準於該閘極接觸蝕刻椿。
- 如申請專利範圍第21項所述之方法,其中,形成該第一導電線路、該第二導電線路、該閘極接觸蝕刻椿及該層絕緣材料,使得該第一導電線路的上表面、該第二導電線路的上表面、該閘極接觸蝕刻椿的上表面及該層絕緣材料的上表面全都大約位於在半導體基板之上的同一個第一層級。
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CN114068557A (zh) * | 2020-01-21 | 2022-02-18 | 福建省晋华集成电路有限公司 | 存储器 |
CN113497143A (zh) * | 2020-04-01 | 2021-10-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及半导体结构的形成方法 |
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