TWI686924B - Integrated circuit and test method - Google Patents

Integrated circuit and test method Download PDF

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TWI686924B
TWI686924B TW107136643A TW107136643A TWI686924B TW I686924 B TWI686924 B TW I686924B TW 107136643 A TW107136643 A TW 107136643A TW 107136643 A TW107136643 A TW 107136643A TW I686924 B TWI686924 B TW I686924B
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die
bonding pad
digital
analog
test
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TW107136643A
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TW202017148A (en
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張華享
大元文一
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普誠科技股份有限公司
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Priority to JP2019057180A priority patent/JP6801034B2/en
Priority to CN201910460862.5A priority patent/CN111081645B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

An integrated circuit is provided. The integrated circuit includes a substrate, a first die, and a second die. The substrate includes a first analog substrate pad. The first die is disposed on the substrate and includes a first analog die pad, a first voltage conversion circuit, and a first digital die pad. The first analog substrate pad is electrically connected to the first analog die pad through a first bonding line. The first voltage conversion circuit is electrically connected to the first analog die pad. The first digital die pad is electrically connected to the first voltage conversion circuit. The second die is disposed on the substrate and includes a second digital die pad. The first digital die pad s electrically connected to the first digital die pad through a second bonding line.

Description

積體電路及其測試方法Integrated circuit and its test method

本申請案係關於一種積體電路,特別是有關於一種多個晶粒封裝的積體電路及其測試方法。The present application relates to an integrated circuit, in particular to an integrated circuit with multiple die packages and its test method.

系統整合目前是半導體產業發展的一重要趨勢。系統整合技術主要包括系統級封裝(System in Package,SiP)、系統級晶片(System on Chip,SoC)等。SiP是指在一積體電路(Integrated Circuit,IC)包裝體中包括多個晶粒之封裝。由於SiP具有微型化、異質性整合(Heterogeneous Integration)、低成本、較短的開發時間、較高的產品效能等優點,使得SiP近來不斷地發展與改良。然而,對於SiP IC而言,由於封裝體的接腳數量有限,使得沒有足夠的接腳可切換用於測試內部的多個晶粒。因此,可能無法對晶粒進行完整的測試。System integration is currently an important trend in the development of the semiconductor industry. System integration technologies mainly include System in Package (SiP), System on Chip (SoC) and so on. SiP refers to a package that includes multiple dies in an integrated circuit (IC) package. Because SiP has the advantages of miniaturization, heterogeneous integration (Heterogeneous Integration), low cost, short development time, and high product performance, SiP has continuously developed and improved recently. However, for SiP ICs, due to the limited number of pins in the package, there are not enough pins to switch multiple internal die. Therefore, it may not be possible to perform a complete test on the die.

因此,本發明提供一種採用多晶粒封裝的積體電路,其可在有限的封裝體的接腳數量下,透過共享接腳的方式來對多個晶粒進行測試。Therefore, the present invention provides an integrated circuit using a multi-die package, which can test multiple dies by sharing the pins with a limited number of pins of the package.

本發明一實施例提供一種積體電路,其包括基板(例如,導線架(lead frame))、第一晶粒、以及第二晶粒。基板具有第一類比基板接合墊(例如,一內引腳接合墊(inner lead bonding pad))。第一晶粒配置在該基板上,且包括第一類比晶粒接合墊、第一電壓轉換電路、以及第一數位晶粒接合墊。第一類比基板接合墊透過第一接合線電性連接第一類比晶粒接合墊。第一電壓轉換電路電性連接第一類比晶粒接合墊。第一數位晶粒接合墊電性連接第一電壓轉換電路。第二晶粒配置在該基板上,且具有第二數位晶粒接合墊。第一數位晶粒接合墊透過第二接合線電性連接第二數位晶粒接合墊。An embodiment of the present invention provides an integrated circuit, which includes a substrate (eg, lead frame), a first die, and a second die. The substrate has a first analog substrate bonding pad (for example, an inner lead bonding pad). The first die is disposed on the substrate and includes a first analog die bonding pad, a first voltage conversion circuit, and a first digital die bonding pad. The first analog substrate bonding pad is electrically connected to the first analog die bonding pad through the first bonding wire. The first voltage conversion circuit is electrically connected to the first analog die bonding pad. The first digital die bonding pad is electrically connected to the first voltage conversion circuit. The second die is disposed on the substrate and has a second digital die bonding pad. The first digital die bonding pad is electrically connected to the second digital die bonding pad through the second bonding wire.

本發明一實施例提供一種測試方法,用於積體電路。此積體電路包括基板、第一晶粒、以及第二晶粒。基板具有第一類比基板接合墊,第一晶粒具有第一類比晶粒接合墊以及第一數位晶粒接合墊,第二晶粒具有第二數位晶粒接合墊。此測試方法包括以下步驟:於第一測試期間,提供第一類比測試輸入信號至第一類比基板接合墊;透過第一類比晶粒接合墊將第一類比測試輸入信號傳送至第一晶粒的第一電壓轉換電路;由第一電壓轉換電路將第一類比測試輸入信號轉換為第一數位測試輸入信號;透過第一數位晶粒接合墊將第一數位測試輸入信號傳送至第二數位晶粒接合墊;以及以該第一數位測試輸入信號來對該第二晶粒進行一第一測試操作。An embodiment of the present invention provides a test method for an integrated circuit. The integrated circuit includes a substrate, a first die, and a second die. The substrate has a first analog substrate bonding pad, the first die has a first analog die bonding pad and a first digital die bonding pad, and the second die has a second digital die bonding pad. The test method includes the steps of: providing a first analog test input signal to the first analog substrate bonding pad during the first test; transmitting the first analog test input signal to the first die through the first analog die bonding pad A first voltage conversion circuit; the first analog conversion input signal is converted into a first digital test input signal by the first voltage conversion circuit; the first digital test input signal is transmitted to the second digital die through the first digital die bonding pad A bonding pad; and using the first digital test input signal to perform a first test operation on the second die.

為使本發明之上述目的、特徵和優點能更明顯易懂,下文特舉一較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, a preferred embodiment is described below in conjunction with the accompanying drawings, which are described in detail below.

第1圖係表示根據本發明一實施例的積體電路(Integrated Circuit)的外觀。參閱第1圖,在此實施例中,積體電路1包括複數晶粒,且例如以系統級封裝(System in Package,SiP)方式對積體電路1進行封裝。在第1圖的實施例中,封裝體具有複數個接腳10,且這些接腳是設置在封裝體四側的扁平接腳。在其他實施例中,積體電路1的接腳可以是配置成陣列的插針、配置成網格陣列的平面接腳、配置成陣列的球狀接腳等等。於下文中,將以以積體電路1包括兩個晶粒為例來進行說明。FIG. 1 shows the appearance of an integrated circuit according to an embodiment of the invention. Referring to FIG. 1, in this embodiment, the integrated circuit 1 includes a plurality of dies, and the integrated circuit 1 is packaged in a system in package (SiP) manner, for example. In the embodiment of FIG. 1, the package has a plurality of pins 10, and these pins are flat pins provided on four sides of the package. In other embodiments, the pins of the integrated circuit 1 may be pins arranged in an array, planar pins arranged in a grid array, ball pins arranged in an array, and so on. In the following, the description will be made by taking the integrated circuit 1 including two dies as an example.

參閱第2A-2B圖,積體電路1包括基板20以及晶粒21與22。在一實施例中,基板20可以一導線架(lead frame)來實施。晶粒21與22可以水平或垂直封裝法的方式配置。參閱第2A圖,在一實施例中,晶粒21與22係以水平封裝法進行配置。在此實施例中,晶粒21與22都是直接接觸基板20,詳細來說,晶粒21與22以彼此平行且非重疊的方式與基板20接合。參閱第2B圖,在另一實施例中,晶粒21與22係以垂直封裝法進行配置。在此實施例中,晶粒21直接接觸基板20,且晶粒22疊在晶粒21之上,詳細來說,晶粒21與22係堆疊的方式與基板20接合。根據本發明一實施例,積體電路1為一觸控系統積體電路,且晶粒21與22中的一者為一感測器積體電路,另一者為微控制器(Microcontroller,MCU)。第2A-2B圖中僅顯示基板20以及晶粒21與22之間的相對位置,未顯示基板20以及晶粒21與22各自的金屬導線與接合墊以及彼此之間的接合線,這些將顯示於第3圖。以下將透過第2B圖所示的積體電路1為例來說明。Referring to FIGS. 2A-2B, the integrated circuit 1 includes a substrate 20 and dies 21 and 22. In one embodiment, the substrate 20 can be implemented with a lead frame. The dies 21 and 22 can be configured in a horizontal or vertical packaging method. Referring to FIG. 2A, in one embodiment, the dies 21 and 22 are configured by a horizontal packaging method. In this embodiment, both the dies 21 and 22 directly contact the substrate 20. In detail, the dies 21 and 22 are bonded to the substrate 20 in a parallel and non-overlapping manner. Referring to FIG. 2B, in another embodiment, the dies 21 and 22 are configured by a vertical packaging method. In this embodiment, the die 21 directly contacts the substrate 20, and the die 22 is stacked on the die 21. Specifically, the die 21 and 22 are bonded to the substrate 20 in a stacked manner. According to an embodiment of the invention, the integrated circuit 1 is a touch system integrated circuit, and one of the dies 21 and 22 is a sensor integrated circuit, and the other is a microcontroller (Microcontroller, MCU) ). Figures 2A-2B only show the relative positions between the substrate 20 and the die 21 and 22. The metal wires and bonding pads of the substrate 20 and the die 21 and 22 are not shown, and the bonding wires between them will be shown. In Figure 3. Hereinafter, the integrated circuit 1 shown in FIG. 2B will be described as an example.

第3圖係表示根據本發明一實施例的積體電路1的佈局配置。參閱第3圖,基板20包括複數接合墊,且每一接合墊電性連接封裝體的一接腳10。在一實施例中,基板20的接合墊為積體電路1的內引腳接合墊(inner lead bonding pad)。為了清楚呈現,第3圖僅顯示基板20的部分接合墊,包括接合墊A1~A4與D1~D3,其中,接合墊A1~A4作為傳送/接收類比信號的類比基板接合墊,接合墊D1~D3作為傳送/接收數位信號的數位基板接合墊。如第3圖所示,晶粒21包括複數接合墊以及電壓轉換電路210~213。在第3圖的實施例中,晶粒21的接合墊包括BA1~BA4與BD1~BD6、BD2’,其中,接合墊BA1~BA4作為傳送/接收類比信號的類比晶粒接合墊,接合墊BD1~BD6作為傳送/接收數位信號的數位晶粒接合墊。在其他實施例中,晶粒21可具有其他的類比晶粒接合墊以及/或數位晶粒接合墊。每一電壓轉換電路電性連接於一類比晶粒接合墊與一數位晶粒接合墊之間。參閱第3圖,電壓轉換電路210透過金屬線ML20與ML22電性連接於類比晶粒接合墊BA1與數位晶粒接合墊BD6之間,電壓轉換電路211透過金屬線ML21與ML23電性連接於類比晶粒接合墊BA2與數位晶粒接合墊BD5之間,電壓轉換電路212透過金屬線ML24與ML26電性連接於類比晶粒接合墊BA3與數位晶粒接合墊BD4之間,且電壓轉換電路213透過金屬線ML25與ML27電性連接於類比晶粒接合墊BA4與數位晶粒接合墊BD3之間。晶粒22的接合墊包括TD1~TD6,其作為傳送/接收數位信號的數位晶粒接合墊。在其他實施例中,晶粒21可具有其他的數位晶粒接合墊。FIG. 3 shows the layout configuration of the integrated circuit 1 according to an embodiment of the present invention. Referring to FIG. 3, the substrate 20 includes a plurality of bonding pads, and each bonding pad is electrically connected to a pin 10 of the package. In an embodiment, the bonding pad of the substrate 20 is an inner lead bonding pad of the integrated circuit 1. For the sake of clarity, FIG. 3 shows only a part of the bonding pads of the substrate 20, including bonding pads A1~A4 and D1~D3, wherein the bonding pads A1~A4 are used as analog substrate bonding pads for transmitting/receiving analog signals, bonding pads D1~ D3 serves as a digital substrate bonding pad for transmitting/receiving digital signals. As shown in FIG. 3, the die 21 includes a plurality of bonding pads and voltage conversion circuits 210-213. In the embodiment of FIG. 3, the bonding pads of the die 21 include BA1~BA4 and BD1~BD6, BD2', wherein the bonding pads BA1~BA4 serve as analog die bonding pads for transmitting/receiving analog signals, bonding pad BD1 ~BD6 is used as a digital die bonding pad for transmitting/receiving digital signals. In other embodiments, the die 21 may have other analog die bonding pads and/or digital die bonding pads. Each voltage conversion circuit is electrically connected between an analog die bonding pad and a digital die bonding pad. Referring to FIG. 3, the voltage conversion circuit 210 is electrically connected between the analog die bonding pad BA1 and the digital die bonding pad BD6 through the metal lines ML20 and ML22, and the voltage conversion circuit 211 is electrically connected to the analog through the metal lines ML21 and ML23 Between the die bonding pad BA2 and the digital die bonding pad BD5, the voltage conversion circuit 212 is electrically connected between the analog die bonding pad BA3 and the digital die bonding pad BD4 through the metal lines ML24 and ML26, and the voltage conversion circuit 213 The metal wires ML25 and ML27 are electrically connected between the analog die bonding pad BA4 and the digital die bonding pad BD3. The bonding pads of the die 22 include TD1 to TD6, which are used as digital die bonding pads for transmitting/receiving digital signals. In other embodiments, the die 21 may have other digital die bonding pads.

接下來將說明基板20以及晶粒21與22之間的連接關係。在基板20與晶粒21之間,類比基板接合墊A1與類比晶粒接合墊BA1透過接合線BL20電性連接,類比基板接合墊A2與類比晶粒接合墊BA2透過接合線BL21電性連接,類比基板接合墊A3與類比晶粒接合墊BA3透過接合線BL22電性連接,類比基板接合墊A4與類比晶粒接合墊BA4透過接合線BL23電性連接,數位基板接合墊D1與數位晶粒接合墊BD1透過接合線BL24電性連接,以及數位基板接合墊D2與數位晶粒接合墊BD2透過接合線BL25電性連接。在晶粒21與22之間,數位基板接合墊BD5與TD5透過接合線BL28電性連接,數位基板接合墊BD6與TD6透過接合線BL27電性連接,數位基板接合墊BD4與TD4透過接合線BL29電性連接,數位基板接合墊BD3與TD3透過接合線BL30電性連接,以及數位基板接合墊BD2’與TD1透過接合線BL31電性連接。根據上述可知,基板20的數位接合墊D2透過接合線BL25電性連接晶粒21的數位晶粒接合墊BD2,接著在晶粒21上透過接合線ML28由數位晶粒接合墊BD2轉接至BD2’,最後數位晶粒接合墊BD2再透過接合線BL31電性連接至數位晶粒接合墊TD1。此外,在基板20與晶粒22之間,數位基板接合墊D3與數位晶粒接合墊TD2透過接合線BL26電性連接。Next, the connection relationship between the substrate 20 and the die 21 and 22 will be explained. Between the substrate 20 and the die 21, the analog substrate bonding pad A1 and the analog die bonding pad BA1 are electrically connected through the bonding wire BL20, and the analog substrate bonding pad A2 and the analog die bonding pad BA2 are electrically connected through the bonding wire BL21. The analog substrate bonding pad A3 and the analog die bonding pad BA3 are electrically connected through the bonding wire BL22, the analog substrate bonding pad A4 and the analog die bonding pad BA4 are electrically connected through the bonding wire BL23, and the digital substrate bonding pad D1 is bonded to the digital die The pad BD1 is electrically connected through the bonding wire BL24, and the digital substrate bonding pad D2 and the digital die bonding pad BD2 are electrically connected through the bonding wire BL25. Between the dies 21 and 22, the digital substrate bonding pads BD5 and TD5 are electrically connected through the bonding wire BL28, the digital substrate bonding pads BD6 and TD6 are electrically connected through the bonding wire BL27, and the digital substrate bonding pads BD4 and TD4 are connected through the bonding wire BL29 Electrically connected, the digital substrate bonding pads BD3 and TD3 are electrically connected through the bonding wire BL30, and the digital substrate bonding pads BD2' and TD1 are electrically connected through the bonding wire BL31. As can be seen from the above, the digital bonding pad D2 of the substrate 20 is electrically connected to the digital die bonding pad BD2 of the die 21 through the bonding wire BL25, and then transferred from the digital die bonding pad BD2 to the BD2 through the bonding wire ML28 on the die 21 ', the last digital die bonding pad BD2 is then electrically connected to the digital die bonding pad TD1 through the bonding wire BL31. In addition, between the substrate 20 and the die 22, the digital substrate bonding pad D3 and the digital die bonding pad TD2 are electrically connected through the bonding wire BL26.

在本發明實施例中,電壓轉換電路210~213的每一者係操作以根據所接收到的一輸入信號的電壓位準來產生具有一特定位準的輸出信號。在一實施例中,舉例來說,一電壓轉換電路可根據其電壓位準低於一臨界值的輸入端信號來產生具有一低電壓位準的輸出信號,且可根據其電壓位準高於此臨界值的輸入端信號來產生具有一高電壓位準的輸出信號。換句話說,此電壓轉換電路的操作如同一類比數位轉換器。在另一實施例中,舉例來說,一電壓轉換電路可根據至少一輸入端信號來產生具有一具有特定電壓位準的輸出信號。換句話說,此電壓轉換電路的操作如同一數位類比轉換器。In the embodiment of the present invention, each of the voltage conversion circuits 210 to 213 is operated to generate an output signal having a specific level according to the voltage level of an input signal received. In one embodiment, for example, a voltage conversion circuit can generate an output signal having a low voltage level according to an input signal whose voltage level is lower than a threshold, and can be higher than the voltage level according to The threshold input signal is used to generate an output signal with a high voltage level. In other words, the voltage conversion circuit operates as the same analog-to-digital converter. In another embodiment, for example, a voltage conversion circuit can generate an output signal having a specific voltage level according to at least one input terminal signal. In other words, the voltage conversion circuit operates like a digital analog converter.

根據本發明一實施例,晶粒21的電壓轉換電路210~213的每一者包括一位準移位電路(Level Shift Circuit,LS)或電壓產生電路(Voltage Generation Circuit,GV),且包括一切換電路。第4A-4B圖係表示根據本發明一實施例的電壓轉換電路40與41,其中,電壓轉換電路40可做為電壓轉換電路210與211中的任一者。電壓轉換電路41可做為電壓轉換電路212與213中的任一者。參閱第4A圖,電壓轉換電路40包括位準移位電路400與切換電路401,其中,切換電路401還包括開關401A與401B。在第4A圖中,除了顯示電壓轉換電路40以外,還顯示控制電路42與一對應的操作電路43,此兩者都設置在晶粒21上。為了能清楚地顯示基板20、晶粒21、與晶粒22各自的金屬導線與接合墊以及彼此之間的接合線,第3圖中未顯示控制電路42與操作電路43。其中,控制電路42係設置來控制切換電路401,而操作電路43則係設置來執行晶粒21的一特定操作。第4A圖中的接合墊BAx作為類比晶粒接合墊BA1或BA2,且接合墊BDy作為接合墊數位晶粒接合墊BD5或BD6。當電壓轉換電路40作為電壓轉換電路210時,接合墊BAx是類比晶粒接合墊BA1,接合墊BDy則是數位晶粒接合墊BD6;當電壓轉換電路40作為電壓轉換電路211時,接合墊BAx是類比晶粒接合墊BA2,接合墊BDy則是數位晶粒接合墊BD5。位準移位電路400的輸入端電性連接接合墊BAx,且其輸出端電性連接切換電路401的輸入端IN401。開關401A電性連接切換電路401的輸入端IN401與輸出端OUT401A之間,且開關401B電性連接切換電路401的輸入端IN401與輸出端OUT401B之間。控制電路42電性連接開關401A與401B,以控制開關401A與401B的導通/截止狀態。操作電路43電性連接輸出端OUT401A,而接合墊BDy電性連接輸出端OUT401B。下文中將以電壓轉換電路40作為電壓轉換電路210作為例子來說明。According to an embodiment of the invention, each of the voltage conversion circuits 210 to 213 of the die 21 includes a level shift circuit (LS) or a voltage generation circuit (GV), and includes a Switch circuit. FIGS. 4A-4B show voltage conversion circuits 40 and 41 according to an embodiment of the present invention, wherein the voltage conversion circuit 40 can be used as any one of the voltage conversion circuits 210 and 211. The voltage conversion circuit 41 can be used as any one of the voltage conversion circuits 212 and 213. Referring to FIG. 4A, the voltage conversion circuit 40 includes a level shift circuit 400 and a switching circuit 401, wherein the switching circuit 401 further includes switches 401A and 401B. In FIG. 4A, in addition to the voltage conversion circuit 40, a control circuit 42 and a corresponding operation circuit 43 are shown, both of which are provided on the die 21. In order to clearly show the metal wires and bonding pads of the substrate 20, the die 21, and the die 22 and the bonding wires between them, the control circuit 42 and the operation circuit 43 are not shown in FIG. 3. The control circuit 42 is configured to control the switching circuit 401, and the operation circuit 43 is configured to perform a specific operation of the die 21. The bonding pad BAx in FIG. 4A serves as an analog die bonding pad BA1 or BA2, and the bonding pad BDy serves as a bonding pad digital die bonding pad BD5 or BD6. When the voltage conversion circuit 40 serves as the voltage conversion circuit 210, the bonding pad BAx is an analog die bonding pad BA1, and the bonding pad BDy is the digital die bonding pad BD6; when the voltage conversion circuit 40 serves as the voltage conversion circuit 211, the bonding pad BAx It is an analog die bonding pad BA2, and the bonding pad BDy is a digital die bonding pad BD5. The input terminal of the level shift circuit 400 is electrically connected to the bonding pad BAx, and the output terminal thereof is electrically connected to the input terminal IN401 of the switching circuit 401. The switch 401A is electrically connected between the input terminal IN401 and the output terminal OUT401A of the switching circuit 401, and the switch 401B is electrically connected between the input terminal IN401 and the output terminal OUT401B of the switching circuit 401. The control circuit 42 is electrically connected to the switches 401A and 401B to control the on/off state of the switches 401A and 401B. The operation circuit 43 is electrically connected to the output terminal OUT401A, and the bonding pad BDy is electrically connected to the output terminal OUT401B. Hereinafter, the voltage conversion circuit 40 will be described as the voltage conversion circuit 210 as an example.

參閱第3與4A圖,當積體電路1處於一測試模式以測試操作電路43時,類比基板接合墊A1接收來自一測試機台的類比測試輸入信號SAin1,且類比測試輸入信號SAin1透過接合線BL20傳送至類比晶粒接合墊BA1(接合墊BAx作為類比晶粒接合墊BA1)。此時,位準移位電路400透過金屬線(即金屬線ML20)自類比晶粒接合墊BA1接收類比測試輸入信號SAin1,並根據類比測試輸入信號SAin1的電壓位準來產生一數位測試輸入信號SDin1。舉例來說,當類比測試輸入信號SAin1的電壓位準低於一臨界值時,位準移位電路400產生具有一低電壓位準(即邏輯位準”0”)的數位測試輸入信號SDin1;當類比測試輸入信號SAin1的電壓位準高於一臨界值時,位準移位電路400產生具有一高電壓位準(即邏輯位準”1”)的數位測試輸入信號SDin1。此時,控制電路42控制開關401A導通並控制開關401B截止,以提供介於輸出端IN401與輸出端OUT401A之間的一路徑,使得數位測試輸入信號SDin1透過導通之開關401A提供至操作電路43。因此,操作電路43可根據數位測試輸入信號SDin1來接受測試。Referring to FIGS. 3 and 4A, when the integrated circuit 1 is in a test mode to test the operation circuit 43, the analog substrate bonding pad A1 receives the analog test input signal SAin1 from a test machine, and the analog test input signal SAin1 passes through the bonding wire BL20 is transferred to the analog die bonding pad BA1 (bonding pad BAx as the analog die bonding pad BA1). At this time, the level shift circuit 400 receives the analog test input signal SAin1 from the analog die bonding pad BA1 through the metal wire (ie, the metal line ML20), and generates a digital test input signal according to the voltage level of the analog test input signal SAin1 SDin1. For example, when the voltage level of the analog test input signal SAin1 is lower than a threshold, the level shift circuit 400 generates a digital test input signal SDin1 having a low voltage level (ie, logic level "0"); When the voltage level of the analog test input signal SAin1 is higher than a threshold, the level shift circuit 400 generates a digital test input signal SDin1 with a high voltage level (ie, logic level “1”). At this time, the control circuit 42 controls the switch 401A to turn on and controls the switch 401B to turn off, so as to provide a path between the output terminal IN401 and the output terminal OUT401A, so that the digital test input signal SDin1 is provided to the operation circuit 43 through the turned-on switch 401A. Therefore, the operation circuit 43 can be tested according to the digital test input signal SDin1.

參閱第3與4A圖,當積體電路1處於測試模式以測試晶粒22的一操作電路時,類比基板接合墊A1接收來自一測試機台的類比測試輸入信號SAin2,且類比測試輸入信號SAin2透過接合線BL20傳送至類比晶粒接合墊BA1(接合墊BAx作為類比晶粒接合墊BA1)。此時,位準移位電路400透過金屬線(即金屬線ML20)自類比晶粒接合墊BA1接收類比測試輸入信號SAin2,並根據類比測試輸入信號SAin2的電壓位準來產生一數位測試輸入信號SDin2。此時,控制電路42控制開關401A截止並控制開關401B導通,以提供介於輸出端IN401與輸出端OUT401B之間的一路徑,使得數位測試輸入信號SDin2透過導通之開關401B以及金屬線(即金屬線ML22)提供至數位晶粒接合墊BD6(接合墊BDy作為類比晶粒接合墊BA6)。數位測試輸入信號SDin2透過接合線BL27傳送至數位晶粒接合墊TD6,且更傳送至晶粒22的特定操作電路,使得此特定操作電路可根據數位測試輸入信號SDin2來接受測試。Referring to FIGS. 3 and 4A, when the integrated circuit 1 is in the test mode to test an operation circuit of the die 22, the analog substrate bonding pad A1 receives the analog test input signal SAin2 from a test machine, and the analog test input signal SAin2 It is transmitted to the analog die bonding pad BA1 through the bonding wire BL20 (the bonding pad BAx serves as the analog die bonding pad BA1). At this time, the level shift circuit 400 receives the analog test input signal SAin2 from the analog die bonding pad BA1 through the metal wire (ie metal line ML20), and generates a digital test input signal according to the voltage level of the analog test input signal SAin2 SDin2. At this time, the control circuit 42 controls the switch 401A to turn off and controls the switch 401B to turn on, so as to provide a path between the output terminal IN401 and the output terminal OUT401B, so that the digital test input signal SDin2 passes through the turned-on switch 401B and the metal wire (ie metal Line ML22) is provided to the digital die bonding pad BD6 (the bonding pad BDy serves as the analog die bonding pad BA6). The digital test input signal SDin2 is transmitted to the digital die bonding pad TD6 through the bonding wire BL27, and is also transmitted to the specific operation circuit of the die 22, so that the specific operation circuit can be tested according to the digital test input signal SDin2.

在電壓轉換電路40作為電壓轉換電路211的情況下,電壓轉換電路40的操作類似於上文,在此省略敘述。In the case where the voltage conversion circuit 40 serves as the voltage conversion circuit 211, the operation of the voltage conversion circuit 40 is similar to the above, and the description is omitted here.

參閱第4B圖,電壓轉換電路41包括電壓產生電路410與切換電路411,其中,切換電路411還包括開關411A與411B。在第4B圖中,除了顯示電壓轉換電路41以外,還顯示控制電路44與一對應的操作電路45,此兩者都設置在晶粒22上。為了能清楚地顯示基板20、晶粒21、與晶粒22各自的金屬導線與接合墊以及彼此之間的接合線,第3圖中未顯示控制電路44與操作電路45。其中,控制電路44係設置來控制切換電路411,而操作電路45則係設置來執行晶粒22的一特定操作。第4B圖中的接合墊BAm作為類比晶粒接合墊BA3或BA4,且接合墊BDn作為接合墊數位晶粒接合墊BD3或BD4。當電壓轉換電路41作為電壓轉換電路212時,接合墊BAm是類比晶粒接合墊BA3,接合墊BDn則是數位晶粒接合墊BD4;當電壓轉換電路41作為電壓轉換電路213時,接合墊BAm是類比晶粒接合墊BA4,接合墊BDn則是數位晶粒接合墊BD3。電壓產生電路410的輸入端電性連接切換電路411的輸出端OUT411,且其輸出端電性連接接合墊BAm。開關411A電性連接切換電路411的輸入端IN411A與輸出端OUT411之間,且開關411B電性連接切換電路411的輸入端IN41B與輸出端OUT411之間。控制電路44電性連接開關411A與411B,以控制開關411A與411B的導通/截止狀態。操作電路45電性連接輸入端IN411A,而接合墊BDn電性連接輸入端IN411B。下文中將以電壓轉換電路41作為電壓轉換電路212作為例子來說明。Referring to FIG. 4B, the voltage conversion circuit 41 includes a voltage generating circuit 410 and a switching circuit 411, wherein the switching circuit 411 further includes switches 411A and 411B. In FIG. 4B, in addition to the voltage conversion circuit 41, the control circuit 44 and a corresponding operation circuit 45 are shown, both of which are provided on the die 22. In order to clearly show the metal wires and bonding pads of the substrate 20, the die 21, and the die 22 and the bonding wires between them, the control circuit 44 and the operation circuit 45 are not shown in FIG. 3. The control circuit 44 is configured to control the switching circuit 411, and the operation circuit 45 is configured to perform a specific operation of the die 22. The bonding pad BAm in FIG. 4B serves as an analog die bonding pad BA3 or BA4, and the bonding pad BDn serves as a bonding pad digital die bonding pad BD3 or BD4. When the voltage conversion circuit 41 is used as the voltage conversion circuit 212, the bonding pad BAm is an analog die bonding pad BA3, and the bonding pad BDn is the digital die bonding pad BD4; when the voltage conversion circuit 41 is used as the voltage conversion circuit 213, the bonding pad BAm It is an analog die bonding pad BA4, and the bonding pad BDn is a digital die bonding pad BD3. The input end of the voltage generating circuit 410 is electrically connected to the output end OUT411 of the switching circuit 411, and the output end thereof is electrically connected to the bonding pad BAm. The switch 411A is electrically connected between the input terminal IN411A and the output terminal OUT411 of the switching circuit 411, and the switch 411B is electrically connected between the input terminal IN41B and the output terminal OUT411 of the switching circuit 411. The control circuit 44 is electrically connected to the switches 411A and 411B to control the on/off state of the switches 411A and 411B. The operation circuit 45 is electrically connected to the input terminal IN411A, and the bonding pad BDn is electrically connected to the input terminal IN411B. Hereinafter, the voltage conversion circuit 41 will be used as the voltage conversion circuit 212 as an example.

參閱第3與4B圖,當積體電路1處於測試模式以檢查操作電路45經測試後的結果時,控制電路44控制開關411A導通並控制開關411B截止,以提供介於輸入端IN411A與輸出端OUT411之間的一路徑,使得來自操作電路43的數位測試輸出信號SDout1透過導通之開關411A提供至電壓產生電路410。舉例來說,此處的操作電路45即為前述的操作電路43,因此,此處所述的數位測試輸出信號SDout1則是係由經測試的操作電路43所產生,例如,操作電路43反應於基於前述數位測試輸入信號SDin1的測試而產生數位測試輸出信號SDout1。電壓產生電路410根據數位測試輸出信號SDout1來產生具有一特定電壓位準的類比測試輸出信號SAout1,且透過金屬線(即金屬線ML24)傳送至類比晶粒接合墊BA3(接合墊BAm作為類比晶粒接合墊BA3)。類比測試輸出信號SAout1再透過接合線BL22傳送至類比基板接合墊A3,且測試機台透過類比基板接合墊A3接收類比測試輸出信號SAout1以檢查操作電路43的測試結果。Referring to FIGS. 3 and 4B, when the integrated circuit 1 is in the test mode to check the result of the operation circuit 45 after the test, the control circuit 44 controls the switch 411A to be turned on and the switch 411B to be turned off, to provide the input terminal IN411A and the output terminal A path between OUT411 causes the digital test output signal SDout1 from the operation circuit 43 to be provided to the voltage generating circuit 410 through the turned-on switch 411A. For example, the operation circuit 45 here is the aforementioned operation circuit 43. Therefore, the digital test output signal SDout1 described here is generated by the tested operation circuit 43. For example, the operation circuit 43 responds to The digital test output signal SDout1 is generated based on the aforementioned test of the digital test input signal SDin1. The voltage generating circuit 410 generates an analog test output signal SAout1 having a specific voltage level according to the digital test output signal SDout1, and transmits it to the analog die bonding pad BA3 (bonding pad BAm as an analog crystal) through a metal wire (ie, metal wire ML24) Grain joint pad BA3). The analog test output signal SAout1 is then transmitted to the analog substrate bonding pad A3 through the bonding wire BL22, and the testing machine receives the analog test output signal SAout1 through the analog substrate bonding pad A3 to check the test result of the operation circuit 43.

參閱第3與4B圖,當積體電路1處於測試模式以檢查晶粒22的一特定操作電路經測試後的結果時,來自該特定操作電路的一數位測試輸出信號SDout2透過一對應的數位晶粒接合墊與一對應的接合線(例如,數位晶粒接合墊TD4與接合線BL29)傳送至數位晶粒接合墊BD4(接合墊BDn作為數位晶粒接合墊BA4)。此處所述的數位測試輸出信號SDout2例如是係由晶粒22的經測試的特定操作電路所產生,例如,特定操作電路反應於基於前述數位測試輸入信號SDin2的測試而產生數位測試輸出信號SDout1。此時,控制電路44控制開關411A截止並控制開關411B導通,以提供介於輸入端IN411B與輸出端OUT411之間的一路徑,使得來自晶粒22的數位測試輸出信號SDout2透過金屬線(及金屬線ML26)與導通之開關411B提供至電壓產生電路410。電壓產生電路410根據數位測試輸出信號SDout2來產生具有一特定電壓位準的類比測試輸出信號SAout2,且透過金屬線(即金屬線ML24)傳送至類比晶粒接合墊BA3(接合墊BAm作為類比晶粒接合墊BA3)。類比測試輸出信號SAout2再透過接合線BL22傳送至類比基板接合墊A3,且測試機台透過類比基板接合墊A3接收類比測試輸出信號SAout2以檢查操作電路43的測試結果。Referring to FIGS. 3 and 4B, when the integrated circuit 1 is in the test mode to check the test result of a specific operation circuit of the die 22, a digital test output signal SDout2 from the specific operation circuit passes through a corresponding digital crystal The grain bonding pad and a corresponding bonding wire (for example, the digital die bonding pad TD4 and the bonding wire BL29) are transferred to the digital die bonding pad BD4 (the bonding pad BDn serves as the digital die bonding pad BA4). The digital test output signal SDout2 described herein is generated by the tested specific operation circuit of the die 22, for example, the specific operation circuit generates the digital test output signal SDout1 in response to the test based on the aforementioned digital test input signal SDin2 . At this time, the control circuit 44 controls the switch 411A to turn off and controls the switch 411B to turn on to provide a path between the input terminal IN411B and the output terminal OUT411, so that the digital test output signal SDout2 from the die 22 passes through the metal line (and metal Line ML26) and the turned-on switch 411B are provided to the voltage generating circuit 410. The voltage generating circuit 410 generates an analog test output signal SAout2 having a specific voltage level according to the digital test output signal SDout2, and transmits it to the analog die bonding pad BA3 (bonding pad BAm as an analog crystal) through a metal wire (ie metal wire ML24) Grain joint pad BA3). The analog test output signal SAout2 is then transmitted to the analog substrate bonding pad A3 through the bonding wire BL22, and the testing machine receives the analog test output signal SAout2 through the analog substrate bonding pad A3 to check the test result of the operation circuit 43.

在電壓轉換電路41作為電壓轉換電路213的情況下,電壓轉換電路41的操作類似於上文,在此省略敘述。In the case where the voltage conversion circuit 41 serves as the voltage conversion circuit 213, the operation of the voltage conversion circuit 41 is similar to the above, and the description is omitted here.

根據本發明一實施例,基板20可透過一數位基板接合墊(例如D1或D2)直接接收來自機台的一數位測試輸入信號,以測試晶粒21或22的一操作電路。在此情況下,數位測試輸入信號則可透過至少一數位晶粒接合墊直接傳送至晶粒21或22的一對應操作電路,而不需透過電壓轉換電路。參閱第3圖,例如,一數位測試輸入信號可透過接合線BL24由數位基板接合墊D1傳送至數位晶粒接合墊BD1,以測試晶粒21上的一特定操作電路;或者一數位測試輸入信號可透過接合線BL25由數位基板接合墊D2先傳送至數位晶粒接合墊BD2,再經由金屬線ML28與接合墊BD2’傳送至數位晶粒接合墊TD1,以測試晶粒22上的一特定操作電路。According to an embodiment of the invention, the substrate 20 can directly receive a digital test input signal from the machine through a digital substrate bonding pad (such as D1 or D2) to test an operation circuit of the die 21 or 22. In this case, the digital test input signal can be directly transmitted to a corresponding operation circuit of the die 21 or 22 through at least one digital die bonding pad, without passing through the voltage conversion circuit. Referring to FIG. 3, for example, a digital test input signal can be transmitted from the digital substrate bonding pad D1 to the digital die bonding pad BD1 through the bonding wire BL24 to test a specific operation circuit on the die 21; or a digital test input signal It can be transferred from the digital substrate bonding pad D2 to the digital die bonding pad BD2 through the bonding wire BL25, and then to the digital die bonding pad TD1 through the metal wire ML28 and the bonding pad BD2' to test a specific operation on the die 22 Circuit.

根據本發明另一實施例,為了避免介於晶粒21與22之間的接合線交錯,晶粒21與22之間的電性連接可透過另一配置在晶粒22上的接合墊來轉接。參閱第3與5圖,第5圖中的數位晶粒接合墊TD4非如第3圖所示直接透過接合線BL29電性連接數位晶粒接合墊BD4,而是透過接合線BL51、數位晶粒接合墊BD3’、與金屬線ML51的轉接而電性連接數位晶粒接合墊BD3;第5圖中的數位晶粒接合墊TD3非如第3圖所示直接透過接合線BL30電性連接數位晶粒接合墊BD3,而是透過接合線BL50、數位晶粒接合墊BD4’、與金屬線ML50的轉接而電性連接數位晶粒接合墊BD4。According to another embodiment of the present invention, in order to avoid the interlacing of the bonding wires between the dies 21 and 22, the electrical connection between the dies 21 and 22 can be transferred through another bonding pad disposed on the dies 22 Pick up. Referring to FIGS. 3 and 5, the digital die bonding pad TD4 in FIG. 5 is not electrically connected to the digital die bonding pad BD4 directly through the bonding wire BL29 as shown in FIG. 3, but through the bonding wire BL51 and the digital die The bonding pad BD3' and the metal wire ML51 are connected to electrically connect the digital die bonding pad BD3; the digital die bonding pad TD3 in FIG. 5 is not directly connected to the digital through the bonding wire BL30 as shown in FIG. 3 The die bonding pad BD3 is electrically connected to the digital die bonding pad BD4 through the connection of the bonding wire BL50, the digital die bonding pad BD4', and the metal wire ML50.

參閱第6圖,根據本發明一實施例,積體電路1’包括基板20’與配置在基板20’上的單一晶粒21’。基板20’上的接合墊配置與第3圖的基板20大致上相同。晶粒21’與第3圖的晶粒21大致相同,唯相異之處在於晶粒21’未具有第3圖的數位晶粒接合墊BD3、BD4、BD2、與BD2’。基板20’與晶粒21’之間的電性連接大致上與第3圖的基板20與晶粒21之間的電性連接大致相同,唯相異之處在於數位基板接合墊D2係透過接合線BL60連接數位晶粒接合墊BD60’。如第6圖所示,數位晶粒接合墊BD60’更透過金屬線ML60電性連接BD60。因此可得知,當最終目的的數位晶粒接合墊BD60距離數位基板接合墊D2較遠時,可透過距離基板數位接合墊D2較近的冗餘數位晶粒接合墊BD60’轉接至基板數位接合墊D2。Referring to FIG. 6, according to an embodiment of the present invention, an integrated circuit 1'includes a substrate 20' and a single die 21' disposed on the substrate 20'. The arrangement of bonding pads on the substrate 20' is substantially the same as the substrate 20 of FIG. The die 21' is substantially the same as the die 21 of FIG. 3 except that the die 21' does not have the digital die bonding pads BD3, BD4, BD2, and BD2' of FIG. The electrical connection between the substrate 20' and the die 21' is substantially the same as the electrical connection between the substrate 20 and the die 21 of FIG. 3, the only difference is that the digital substrate bonding pad D2 is through bonding The line BL60 is connected to the digital die bonding pad BD60'. As shown in FIG. 6, the digital die bonding pad BD60' is further electrically connected to the BD60 through the metal wire ML60. Therefore, it can be known that when the final destination digital die bonding pad BD60 is far away from the digital substrate bonding pad D2, it can be transferred to the substrate digital through the redundant digital die bonding pad BD60' closer to the substrate digital bonding pad D2 Bonding pad D2.

根據上述的實施例,本案透過在一晶粒上設置操作如同數位類比轉換器與類比數位轉換器的電壓轉換電路,使得基板的一類比接合墊也可接收測試輸入信號以對晶粒進行測試或輸出晶粒的類比測試結果。此外,透過在一晶粒(例如晶粒21)上的轉接,可透過同一接腳對來對該晶粒或另一晶粒(例如晶粒22)進行測試,如此一來,在封裝體的有限接腳數量(即基板的有限接合墊數量)下,仍能實現對於晶粒的測試。According to the above-mentioned embodiment, in this case, a voltage conversion circuit that operates like a digital-to-analog converter and an analog-to-digital converter is provided on a die so that an analog bonding pad of the substrate can also receive test input signals to test the die or Output the analog test results of the die. In addition, through the transfer on a die (such as die 21), the die or another die (such as die 22) can be tested through the same pin pair, so that in the package Under the limited number of pins (that is, the limited number of bonding pads on the substrate), the die can still be tested.

本發明雖以較佳實施例揭露如上,然其並非用以限定本發明的範圍,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention is disclosed as above with preferred embodiments, it is not intended to limit the scope of the present invention. Any person with ordinary knowledge in the technical field can make some changes and without departing from the spirit and scope of the present invention. Retouching, therefore, the protection scope of the present invention shall be subject to the scope defined in the appended patent application.

1、1’:積體電路 1. 1’: Integrated circuit

10:接腳 10: Pin

20、20’:基板 20, 20’: substrate

21、21’、22:晶粒 21, 21’, 22: grain

40、41:電壓轉換電路 40, 41: voltage conversion circuit

42、44:控制電路 42, 44: control circuit

43、45:操作電路 43, 45: operating circuit

210...213:電壓轉換電路 210...213: voltage conversion circuit

400:位準移位電路 400: level shift circuit

401:切換電路 401: Switching circuit

401A、401B:開關 401A, 401B: switch

410:電壓產生電路 410: voltage generating circuit

411:切換電路 411: Switching circuit

411A、411B:開關 411A, 411B: switch

A1...A4:類比基板接合墊 A1...A4: Analog substrate bonding pads

D1...D3:數位基板接合墊 D1...D3: Digital substrate bonding pads

BA1...BA4、BAx、BAm:類比晶粒接合墊 BA1...BA4, BAx, BAm: Analog die bonding pads

BD1...BD6、BD2’...BD4’、BD60、BD60’、BDy、BDn:數位晶粒接合墊 BD1...BD6, BD2’...BD4’, BD60, BD60’, BDy, BDn: digital die bonding pads

BL20…BL31、BL50、BL51、BL60:接合線BL20…BL31, BL50, BL51, BL60: bonding wire

IN401、IN411A、IN411B:輸入端IN401, IN411A, IN411B: input terminal

OUT401A、OUT401B、OUT411:輸出端OUT401A, OUT401B, OUT411: output

ML20…ML28、ML50、ML51、ML60:金屬線ML20…ML28, ML50, ML51, ML60: metal wire

SAin1、SAin2:類比測試輸入信號SAin1, SAin2: analog test input signal

SAout1、SAout2:類比測試輸出信號SAout1, SAout2: analog test output signal

SDin1、SDin2:數位測試輸入信號SDin1, SDin2: digital test input signal

SDout1、SDout2:數位測試輸出信號SDout1, SDout2: digital test output signal

TD1~TD6:數位晶粒接合墊TD1~TD6: digital die bonding pad

第1圖表示根據本發明一實施例的積體電路的外觀。 第2A圖表示根據本發明一實施例,積體電路內複數晶粒的配置。 第2B圖表示根據本發明另一實施例,積體電路內複數晶粒的配置。 第3圖表示根據本發明一實施例的積體電路內的接合墊、接合線、與金屬線的佈局配置。 第4A圖表示根據本發明一實施例的電壓轉換電路。 第4B圖表示根據本發明另一實施例的電壓轉換電路。 第5圖表示根據本發明另一實施例的積體電路內的接合墊、接合線、與金屬線的佈局配置。 第6圖表示根據本發明另一實施例的積體電路內的接合墊、接合線、與金屬線的佈局配置。Fig. 1 shows the appearance of an integrated circuit according to an embodiment of the present invention. FIG. 2A shows the arrangement of plural dies in an integrated circuit according to an embodiment of the invention. FIG. 2B shows the arrangement of plural dies in an integrated circuit according to another embodiment of the present invention. FIG. 3 shows the layout of bonding pads, bonding wires, and metal wires in an integrated circuit according to an embodiment of the present invention. FIG. 4A shows a voltage conversion circuit according to an embodiment of the present invention. FIG. 4B shows a voltage conversion circuit according to another embodiment of the present invention. FIG. 5 shows the layout of bonding pads, bonding wires, and metal wires in an integrated circuit according to another embodiment of the present invention. FIG. 6 shows the layout of bonding pads, bonding wires, and metal wires in an integrated circuit according to another embodiment of the present invention.

1:積體電路 1: Integrated circuit

20:基板 20: substrate

21、22:晶粒 21, 22: grain

210...213:電壓轉換電路 210...213: voltage conversion circuit

A1...A4:類比基板接合墊 A1...A4: Analog substrate bonding pads

D1...D3:數位基板接合墊 D1...D3: Digital substrate bonding pads

BA1...BA4:類比晶粒接合墊 BA1...BA4: Analog die bonding pad

BD1...BD6、BD2’:數位晶粒接合墊 BD1...BD6, BD2’: digital die bond pads

BL20...BL31:接合線 BL20...BL31: Bonding wire

ML20...ML28:金屬線 ML20...ML28: metal wire

TD1~TD6:數位晶粒接合墊 TD1~TD6: digital die bonding pad

Claims (20)

一種積體電路,包括:一基板,具有一第一類比基板接合墊;一第一晶粒,配置在該基板上,包括:一第一類比晶粒接合墊,該第一類比基板接合墊透過一第一接合線電性連接該第一類比晶粒接合墊;一第一電壓轉換電路,電性連接該第一類比晶粒接合墊;以及一第一數位晶粒接合墊,電性連接該第一電壓轉換電路;以及一第二晶粒,配置在該基板上,具有一第二數位晶粒接合墊,其中,該第一數位晶粒接合墊透過一第二接合線電性連接該第二數位晶粒接合墊。 An integrated circuit includes: a substrate having a first analog substrate bonding pad; a first die disposed on the substrate, including: a first analog die bonding pad through which the first analog substrate bonding pad penetrates A first bonding wire is electrically connected to the first analog die bonding pad; a first voltage conversion circuit is electrically connected to the first analog die bonding pad; and a first digital die bonding pad is electrically connected to the A first voltage conversion circuit; and a second die, disposed on the substrate, having a second digital die bonding pad, wherein the first digital die bonding pad is electrically connected to the first through a second bonding wire Two-digit die bonding pad. 如申請專利範圍第1項所述之積體電路,其中,當該積體電路處於一測試模式時,該第一類比基板接合墊接收一類比測試輸入信號,且該第一電壓轉換電路接收該類比測試輸入信號並根據該類比測試輸入信號的電壓位準來產生一數位測試輸入信號。 The integrated circuit as described in item 1 of the patent application range, wherein, when the integrated circuit is in a test mode, the first analog substrate bonding pad receives an analog test input signal, and the first voltage conversion circuit receives the Analog test input signal and generate a digital test input signal according to the voltage level of the analog test input signal. 如申請專利範圍第2項所述之積體電路,其中,該第一電壓轉換電路包括:一切換電路,具有接收該數位測試輸入信號的一輸入端、電性連接該第一晶粒中的一操作電路的一第一輸出端、以及電性連接該第一數位晶粒接合墊的一第二輸出端; 其中,當該積體電路於該測試模式下接收該類比測試輸入信號以測試該操作電路時,該切換電路提供介於該輸入端與該第一輸出端之間的一第一路徑,以將該數位測試輸入信號輸出到該操作電路。 The integrated circuit as described in item 2 of the patent application scope, wherein the first voltage conversion circuit includes: a switching circuit having an input terminal for receiving the digital test input signal, electrically connected to the first die A first output terminal of an operation circuit and a second output terminal electrically connected to the first digital die bonding pad; Wherein, when the integrated circuit receives the analog test input signal in the test mode to test the operating circuit, the switching circuit provides a first path between the input terminal and the first output terminal to The digital test input signal is output to the operation circuit. 如申請專利範圍第3項所述之積體電路,其中,當該積體電路於該測試模式下接收該類比測試輸入信號以測試該第二晶粒時,該切換電路提供介於該輸入端與該第二輸出端之間的一第二路徑,以將該數位測試輸入信號輸出到該第一數位晶粒接合墊。 The integrated circuit as described in item 3 of the patent application scope, wherein, when the integrated circuit receives the analog test input signal in the test mode to test the second die, the switching circuit provides the input A second path between the second output terminal to output the digital test input signal to the first digital die bonding pad. 如申請專利範圍第1項所述之積體電路,其中,當該積體電路處於一測試模式時,該第一電壓轉換電路接收一數位測試輸出信號,根據該數位測試輸出信號來產生一類比測試輸出信號,且輸出該類比測試輸出信號至該第一類比晶粒接合墊。 The integrated circuit as described in item 1 of the patent application scope, wherein, when the integrated circuit is in a test mode, the first voltage conversion circuit receives a digital test output signal and generates an analogy based on the digital test output signal Test the output signal, and output the analog test output signal to the first analog die bonding pad. 如申請專利範圍第5項所述之積體電路,其中,該第一電壓轉換電路包括:一切換電路,具有電性連接該第一晶粒中的一操作電路的一第一輸入端、該第一數位晶粒接合墊的一第二輸出端、以及一輸出端;其中,當該積體電路於該測試模式下測試該操作電路時,該切換電路提供介於該第一輸入端與該輸出端之間的一第一路徑,以接收來自該操作電路的該數位測試輸出信號。 The integrated circuit as described in item 5 of the patent application scope, wherein the first voltage conversion circuit includes: a switching circuit having a first input terminal electrically connected to an operation circuit in the first die, the A second output terminal and an output terminal of the first digital die bonding pad; wherein, when the integrated circuit tests the operation circuit in the test mode, the switching circuit provides between the first input terminal and the A first path between the output terminals to receive the digital test output signal from the operation circuit. 如申請專利範圍第6項所述之積體電路,其中,當該積體電路於該測試模式下測試該第二晶粒時,該切換電路 提供介於該第二輸入端與該輸出端之間的一第二路徑,以接收來自該第二晶粒的該數位測試輸出信號。 The integrated circuit as described in item 6 of the patent application scope, wherein, when the integrated circuit tests the second die in the test mode, the switching circuit A second path between the second input terminal and the output terminal is provided to receive the digital test output signal from the second die. 如申請專利範圍第1項所述之積體電路,其中,該基板更具有一第二類比基板接合墊;其中,該第一晶粒更包括:一第二類比晶粒接合墊,透過一第三接合線電性連接該第二類比基板接合墊;一第二電壓轉換電路,電性連接該第二類比晶粒接合墊;以及一第三數位晶粒接合墊,電性連接該第二電壓轉換電路;以及其中,該第二晶粒更包括一第四數位晶粒接合墊,透過一第四接合線電性連接到該第三數位晶粒接合墊。 The integrated circuit as described in item 1 of the patent application scope, wherein the substrate further has a second analog substrate bonding pad; wherein the first die further includes: a second analog die bonding pad, which passes through a first Three bonding wires are electrically connected to the second analog substrate bonding pad; a second voltage conversion circuit is electrically connected to the second analog die bonding pad; and a third digital die bonding pad is electrically connected to the second voltage A conversion circuit; and wherein the second die further includes a fourth digital die bonding pad electrically connected to the third digital die bonding pad through a fourth bonding wire. 如申請專利範圍第8項所述之積體電路,其中,該第一電壓轉換電路包括一位準移位電路,於一測試模式下接收來自該第一類比基板接合墊之一類比測試輸入信號,且根據該類比測試輸入信號的電壓位準來產生一數位測試輸入信號;以及其中,該第二電壓轉換電路包括一電壓產生電路,於該測試模式下接收一數位測試輸出信號,根據該數位測試輸出信號來產生具有一特定電壓位準的一類比測試輸出信號,且將輸出該類比測試輸出信號至該第二類比基板接合墊。 The integrated circuit as described in item 8 of the patent application range, wherein the first voltage conversion circuit includes a level shift circuit that receives an analog test input signal from a bonding pad of the first analog substrate in a test mode And generate a digital test input signal according to the voltage level of the analog test input signal; and wherein the second voltage conversion circuit includes a voltage generating circuit that receives a digital test output signal in the test mode, based on the digital The test output signal is used to generate an analog test output signal having a specific voltage level, and the analog test output signal is output to the second analog substrate bonding pad. 如申請專利範圍第1項所述之積體電路,其中,該基板更包括一第一數位基板接合墊; 其中,該第一晶粒更包括一第三數位晶粒接合墊,該第一數位基板接合墊透過一第三接合線電性連接該第三數位晶粒接合墊。 The integrated circuit as described in item 1 of the patent application scope, wherein the substrate further includes a first digital substrate bonding pad; Wherein, the first die further includes a third digital die bonding pad, and the first digital substrate bonding pad is electrically connected to the third digital die bonding pad through a third bonding wire. 如申請專利範圍第10項所述之積體電路,其中,該第二晶粒更包括一第四數位晶粒接合墊,該第三數位晶粒接合墊透過一第四接合線電性連接該第四數位晶粒接合墊。 The integrated circuit as described in item 10 of the patent application range, wherein the second die further includes a fourth digital die bond pad, and the third digital die bond pad is electrically connected to the fourth die wire The fourth digital die bonding pad. 如申請專利範圍第10項所述之積體電路,其中,該第一晶粒更包括一第四數位晶粒接合墊,且該第三數位晶粒接合墊電性連接該第四數位晶粒接合墊;以及其中,該第二晶粒更包括一第五數位晶粒接合墊,該第四數位晶粒接合墊透過一第四接合線電性連接該第五數位晶粒接合墊。 The integrated circuit as described in item 10 of the patent application range, wherein the first die further includes a fourth digital die bonding pad, and the third digital die bonding pad is electrically connected to the fourth digital die A bonding pad; and wherein the second die further includes a fifth digital die bonding pad, and the fourth digital die bonding pad is electrically connected to the fifth digital die bonding pad through a fourth bonding wire. 如申請專利範圍第10項所述之積體電路,其中,該第一晶粒更包括:一第四數位晶粒接合墊,該第三數位晶粒接合墊電性連接該第四數位晶粒接合墊;以及一操作電路,電性連接該第四數位晶粒接合墊。 The integrated circuit as described in item 10 of the patent application range, wherein the first die further includes: a fourth digital die bonding pad, the third digital die bonding pad is electrically connected to the fourth digital die A bonding pad; and an operation circuit electrically connected to the fourth digital die bonding pad. 如申請專利範圍第1項所述之積體電路,其中,該第一晶粒更包括一第三數位晶粒接合墊,電性連接該第一電壓轉換電路與該第一數位晶粒接合墊,且介於該第一電壓轉換電路與該第一數位晶粒接合墊之間。 The integrated circuit as described in item 1 of the patent application range, wherein the first die further includes a third digital die bonding pad electrically connected to the first voltage conversion circuit and the first digital die bonding pad And between the first voltage conversion circuit and the first digital die bonding pad. 如申請專利範圍第1項所述之積體電路,其中,該第一晶粒與該第二晶粒係以平行封裝法配置在該基板上。 The integrated circuit as described in item 1 of the patent application scope, wherein the first die and the second die are arranged on the substrate by a parallel packaging method. 如申請專利範圍第1項所述之積體電路,其中, 該第一晶粒與該第二晶粒係以垂直封裝法配置在該基板上。 The integrated circuit as described in item 1 of the patent application scope, in which The first die and the second die are arranged on the substrate by a vertical packaging method. 一種測試方法,用於一積體電路,該積體電路包括一基板、一第一晶粒、以及一第二晶粒,該基板具有一第一類比基板接合墊,該第一晶粒具有一第一類比晶粒接合墊以及一第一數位晶粒接合墊,該第二晶粒具有一第二數位晶粒接合墊,該測試方法包括:於一第一測試期間,提供一第一類比測試輸入信號至該第一類比基板接合墊;透過該第一類比晶粒接合墊將該第一類比測試輸入信號傳送至該第一晶粒的一第一電壓轉換電路;由該第一電壓轉換電路將該第一類比測試輸入信號轉換為一第一數位測試輸入信號;透過該第一數位晶粒接合墊將該第一數位測試輸入信號傳送至該第二數位晶粒接合墊;以及以該第一數位測試輸入信號來對該第二晶粒進行一第一測試操作。 A test method for an integrated circuit including a substrate, a first die, and a second die, the substrate having a first analog substrate bonding pad, the first die having a A first analog die bond pad and a first digital die bond pad, the second die has a second digital die bond pad, the test method includes: providing a first analog test during a first test period Input signals to the first analog substrate bonding pad; transmit the first analog test input signal to a first voltage conversion circuit of the first die through the first analog die bonding pad; by the first voltage conversion circuit Converting the first analog test input signal into a first digital test input signal; transmitting the first digital test input signal to the second digital die bond pad through the first digital die bond pad; and using the first A digital test input signal is used to perform a first test operation on the second die. 如申請專利範圍第17項所述之測試方法,其中,該基板更具有一第二類比基板接合墊,該第一晶粒更具有一第二類比晶粒接合墊以及一第三數位晶粒接合墊,該第二晶粒具有一第四數位晶粒接合墊,且該測試方法更包括:反應於該第一測試操作,於該第四數位晶粒接合墊產生一第一數位測試輸出信號;透過該第三數位晶粒接合墊將該第一數位測試輸出信號傳送至該第一晶粒的一第二電壓轉換電路; 由該第二電壓轉換電路將該第一數位測試輸出信號轉換為一第一類比測試輸出信號;以及透過該第二類比晶粒接合墊將該第一類比測試輸出信號傳送至該第二類比基板接合墊。 The test method as described in Item 17 of the patent application range, wherein the substrate further has a second analog substrate bonding pad, the first die further has a second analog die bonding pad and a third digital die bonding Pad, the second die has a fourth digital die bonding pad, and the test method further includes: generating a first digital test output signal on the fourth digital die bonding pad in response to the first test operation; Transmitting the first digital test output signal to a second voltage conversion circuit of the first die through the third digital die bonding pad; Converting the first digital test output signal into a first analog test output signal by the second voltage conversion circuit; and transmitting the first analog test output signal to the second analog substrate through the second analog die bonding pad Bonding pad. 如申請專利範圍第17項所述之測試方法,更包括:於一第二測試期間,提供一第二類比測試輸入信號至該第一類比基板接合墊;透過該第一類比晶粒接合墊將該第二類比測試輸入信號傳送至該第一電壓轉換電路;由該第一電壓轉換電路將該第二類比測試輸入信號轉換為一第二數位測試輸入信號;以及以該第二數位測試輸入信號來對該第一晶粒進行一測試操作。 The test method described in Item 17 of the patent application scope further includes: providing a second analog test input signal to the first analog substrate bonding pad during a second test period; Transmitting the second analog test input signal to the first voltage conversion circuit; converting the second analog test input signal into a second digital test input signal by the first voltage conversion circuit; and using the second digital test input signal To perform a test operation on the first die. 如申請專利範圍第19項所述之測試方法,其中,該基板更具有一第二類比基板接合墊,該第一晶粒更具有一第二類比晶粒接合墊且該測試方法更包括:反應於該第一測試操作,由該第一晶粒產生一第二數位測試輸出信號;由該第二電壓轉換電路將該第二數位測試輸出信號轉換為一第二類比測試輸出信號;以及透過該第二類比晶粒接合墊將該第二類比測試輸出信號傳送至該第二類比基板接合墊。 The test method as described in item 19 of the patent application range, wherein the substrate further has a second analogous substrate bonding pad, the first die has a second analogous die bonding pad and the test method further includes: reaction In the first test operation, a second digital test output signal is generated from the first die; the second digital test output signal is converted into a second analog test output signal by the second voltage conversion circuit; and through the The second analog die bonding pad transmits the second analog test output signal to the second analog substrate bonding pad.
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