TWI685916B - 用於靜電夾盤表面之徑向向外的墊設計 - Google Patents

用於靜電夾盤表面之徑向向外的墊設計 Download PDF

Info

Publication number
TWI685916B
TWI685916B TW105100585A TW105100585A TWI685916B TW I685916 B TWI685916 B TW I685916B TW 105100585 A TW105100585 A TW 105100585A TW 105100585 A TW105100585 A TW 105100585A TW I685916 B TWI685916 B TW I685916B
Authority
TW
Taiwan
Prior art keywords
electrostatic chuck
outer edge
elongated features
chuck assembly
radially aligned
Prior art date
Application number
TW105100585A
Other languages
English (en)
Chinese (zh)
Other versions
TW201637122A (zh
Inventor
瑞吉高芬達
希拉哈拉羅伯T
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201637122A publication Critical patent/TW201637122A/zh
Application granted granted Critical
Publication of TWI685916B publication Critical patent/TWI685916B/zh

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW105100585A 2015-02-06 2016-01-08 用於靜電夾盤表面之徑向向外的墊設計 TWI685916B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/616,647 2015-02-06
US14/616,647 US20160230269A1 (en) 2015-02-06 2015-02-06 Radially outward pad design for electrostatic chuck surface

Publications (2)

Publication Number Publication Date
TW201637122A TW201637122A (zh) 2016-10-16
TWI685916B true TWI685916B (zh) 2020-02-21

Family

ID=56564492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105100585A TWI685916B (zh) 2015-02-06 2016-01-08 用於靜電夾盤表面之徑向向外的墊設計

Country Status (7)

Country Link
US (1) US20160230269A1 (enExample)
EP (1) EP3254307B1 (enExample)
JP (1) JP6711838B2 (enExample)
KR (1) KR102619126B1 (enExample)
CN (2) CN114686834A (enExample)
TW (1) TWI685916B (enExample)
WO (1) WO2016126360A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646843B2 (en) * 2014-12-08 2017-05-09 Applied Materials, Inc. Tunable magnetic field to improve uniformity
KR102669903B1 (ko) * 2016-08-30 2024-05-28 주성엔지니어링(주) 기판 처리 장치
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
KR102359591B1 (ko) * 2017-06-16 2022-02-08 주성엔지니어링(주) 진공용 회전 전기 커넥터
JP7208168B2 (ja) 2017-06-16 2023-01-18 チュソン エンジニアリング カンパニー,リミテッド 基板処理装置及び真空回転電気コネクタ
CN108538776B (zh) * 2018-03-29 2021-11-16 北京北方华创微电子装备有限公司 静电卡盘及其制造方法
CN112166497B (zh) 2018-06-22 2021-12-21 应用材料公司 半导体晶片处理中最小化晶片背侧损伤的方法
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
CN110158029B (zh) * 2019-07-05 2020-07-17 北京北方华创微电子装备有限公司 掩膜结构和fcva设备
WO2022265882A1 (en) * 2021-06-14 2022-12-22 Lam Research Corporation Frontside and backside pressure monitoring for substrate movement prevention
KR20240042451A (ko) * 2021-08-13 2024-04-02 샤인 테크놀로지스 엘엘씨 이온 및 동위원소 생산과 같은 고진공 응용을 위한 자기 회전 장치
CN120420819A (zh) 2021-10-01 2025-08-05 阳光技术有限责任公司 用于离子收集的方法
CN120435767A (zh) * 2022-10-03 2025-08-05 提升材料德国有限公司 卷材涂布方法及具有集成静电吸附的通风冷却鼓

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020181184A1 (en) * 2001-05-29 2002-12-05 Lee Sun-Young Wafer space supporting apparatus installed on electrostatic chuck and method for fabricating the same
US20050099758A1 (en) * 2003-10-28 2005-05-12 Kellerman Peter L. Method of making a mems electrostatic chuck
US20050207088A1 (en) * 2003-12-05 2005-09-22 Tokyo Electron Limited Electrostatic chuck
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
TW201027661A (en) * 2008-08-12 2010-07-16 Applied Materials Inc Electrostatic chuck assembly

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
KR101526615B1 (ko) * 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
US7576018B2 (en) * 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
TWI475594B (zh) * 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8861170B2 (en) * 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
KR101784227B1 (ko) * 2013-03-15 2017-10-11 어플라이드 머티어리얼스, 인코포레이티드 정전 척의 수리 및 복원을 위한 방법 및 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020181184A1 (en) * 2001-05-29 2002-12-05 Lee Sun-Young Wafer space supporting apparatus installed on electrostatic chuck and method for fabricating the same
US20050099758A1 (en) * 2003-10-28 2005-05-12 Kellerman Peter L. Method of making a mems electrostatic chuck
US20050207088A1 (en) * 2003-12-05 2005-09-22 Tokyo Electron Limited Electrostatic chuck
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
TW201027661A (en) * 2008-08-12 2010-07-16 Applied Materials Inc Electrostatic chuck assembly

Also Published As

Publication number Publication date
EP3254307B1 (en) 2022-03-02
JP6711838B2 (ja) 2020-06-17
JP2018505561A (ja) 2018-02-22
KR20170110712A (ko) 2017-10-11
WO2016126360A1 (en) 2016-08-11
KR102619126B1 (ko) 2023-12-27
TW201637122A (zh) 2016-10-16
CN114686834A (zh) 2022-07-01
EP3254307A1 (en) 2017-12-13
EP3254307A4 (en) 2018-08-15
CN107208261A (zh) 2017-09-26
US20160230269A1 (en) 2016-08-11

Similar Documents

Publication Publication Date Title
TWI685916B (zh) 用於靜電夾盤表面之徑向向外的墊設計
KR102165695B1 (ko) 정전 척 표면을 위한 패드 설계
TWI747033B (zh) 具有嵌入式射頻屏蔽的半導體基板支撐件
JP6489146B2 (ja) 静電チャック装置
TWI803753B (zh) 具有背側泵送的熱處理腔室蓋
TWI757671B (zh) 用於改進的熱傳遞和溫度均勻性的加熱的基座設計
CN110120329A (zh) 等离子体处理装置
CN108140551A (zh) 用于半导体制造的晶片处理的高生产率pecvd工具
KR20220079650A (ko) 통합된 베벨 퍼지 기능 및 후면을 갖는 웨이퍼 가열기
TWI870476B (zh) 用於空間多晶圓處理工具的基座加熱器
JP2004282047A (ja) 静電チャック
CN113169111A (zh) 具有改良的热耦合以用于热敏感处理的静电吸盘
KR20240094004A (ko) Pvd 챔버를 위한 고온 탈착가능 초고주파(vhf) 정전 척(esc)
TWI869158B (zh) 可偏壓靜電吸盤
JP3833173B2 (ja) 真空処理装置及び排気リング
KR20240143743A (ko) 기판 지지대 및 이를 포함하는 기판 처리 장치
TW202527467A (zh) 具有自感應dc電壓的雙極靜電吸盤電極
KR20240038161A (ko) 페디스털 조립체를 위한 퍼지 링
JP2023507091A (ja) 端部/中央部の不均一性を軽減するためにウエハの外周近傍に凹部を備えた半導体処理チャック